CN103413780B - Method for manufacturing three-dimensional through hole interconnection structure based on molten glass skeleton - Google Patents
Method for manufacturing three-dimensional through hole interconnection structure based on molten glass skeleton Download PDFInfo
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- CN103413780B CN103413780B CN201310365926.6A CN201310365926A CN103413780B CN 103413780 B CN103413780 B CN 103413780B CN 201310365926 A CN201310365926 A CN 201310365926A CN 103413780 B CN103413780 B CN 103413780B
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000006060 molten glass Substances 0.000 title abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 88
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 88
- 239000010703 silicon Substances 0.000 claims abstract description 88
- 239000011521 glass Substances 0.000 claims abstract description 84
- 238000005516 engineering process Methods 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 238000005498 polishing Methods 0.000 claims abstract description 5
- 239000000428 dust Substances 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 claims description 2
- 230000008439 repair process Effects 0.000 claims description 2
- 239000000843 powder Substances 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 5
- 238000007650 screen-printing Methods 0.000 abstract 3
- 238000001816 cooling Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a method for manufacturing a three-dimensional through hole interconnection structure based on a molten glass skeleton, and relates to the interconnection technology of silicon through holes. Grooves are etched in a silicon layer, and silicon columns are formed. A screen printing plate with a pattern is made to align at the etched pattern of the silicon layer. Glass powder is arranged on the screen printing plate. The glass powder is extruded in the vertical direction to be filled into the grooves, and the screen printing plate is moved away. The glass powder on the surfaces of the tops of the silicon columns is removed. The silicon layer filled with the glass powder is heated and molten, no bubble exists inside the silicon layer, a molten glass structure is obtained after cooling, the silicon layer of the obtained molten glass structure is arranged in etching liquid, the remaining molten glass structure on the surfaces of the tops of the silicon columns is removed by the adoption of the wet etching technology, and the molten glass skeleton inside the grooves is obtained. By the adoption of the mechanical lapping mode, the lower portion of the silicon layer is machined in a thinned mode until the bottoms of the silicon columns are exposed out of the lower portion of the silicon layer, then, lapping damage is repaired by the adoption of the chemical mechanical polishing mode, and therefore the three-dimensional through hole interconnection structure based on the molten glass skeleton is obtained.
Description
Technical field
The present invention relates to silicon through hole interconnection technique, especially relate to a kind of manufacture method of the three-dimensional through hole interconnection structure based on melten glass skeleton.
Background technology
Integrated based on the three-dimensional that silicon through hole is interconnected is a kind of brand-new encapsulation technology, and it can provide the interconnected of the electrical signal in vertical direction, reduces parasitic capacitance and the power consumption of line, improves transmission speed.Greatly can promote the closeness of encapsulation simultaneously, reduce the size of chip, be widely used in the parallel link of integrated circuit (IC) and MEMS (micro electro mechanical system) (MEMS).
Traditional silicon through hole interconnection technique (TSV) manufacture method mainly comprises: the filling of the making of silicon through hole, the insulation of silicon through hole and silicon through hole.Its technological process, see Fig. 1, can be summarized as: step 1, adopts dry etch process (DRIE) to prepare the silicon through hole of high-aspect-ratio, as shown in Fig. 1 (a); Step 2, adopts PCVD at etching silicon wafer and through-hole inner surface grown silicon nitride film (Si
3n
4) or silica membrane (SiO
2), as shown in Fig. 1 (b); Step 3, makes Seed Layer in through hole, as shown in Fig. 1 (c); Step 4, adopts electroplating technology in through hole, fills metal completely, as shown in Figure 1 (d) shows; Step 5, adopts mechanical milling tech, removes back side silicon layer, and polishing, obtain silicon through hole interconnect architecture as Suo Shi Fig. 1 (e).
At present, because the dry etching technology in TSV manufacture method can make the through hole of minor diameter, high-aspect-ratio, thus main restriction silicon through hole interconnected be reliability and electroplating technology two aspects of growth insulating barrier.If publication number is the Chinese patent of CN101540295B, denomination of invention is that the through hole proposing high-aspect-ratio in " a kind of preparation method of insulating barrier of TSV through hole " can impact the insulating barrier performance of growth, and then causes adhesiveness decline ultimate failure; If publication number is the Chinese patent of CN1260398C, denomination of invention is propose in " electrolytic copper electroplating liquid ", and electroplating technology also difficulty can increase because clear size of opening reduces.
Glass dust is a kind of particulate form glass being widely used in applying the aspects such as slurry, and its size can change from micron order to nanoscale according to preparation technology, and its melt temperature and thermal coefficient of expansion can regulate by changing formulated component.
Summary of the invention
The object of the invention is to overcome that to there are grown layer insulation property in traditional TSV manufacture method weak, the problems such as electroplating technology processing difficulties, cost are high, poor reliability, provide a kind of and make little live width, the high three-dimensional through hole interconnection structure manufacture method based on melten glass skeleton of reliability.
Three-dimensional through hole interconnection structure manufacture method based on melten glass skeleton of the present invention, comprises the following steps:
1) on silicon layer, etch groove, form protruding silicon post simultaneously;
2) pattern after being etched with silicon layer by the figuratum silk-screen plate of band is aimed at, and on guarantee silk-screen plate, pierced pattern is covered on the groove that etches, and all the other area parts of silicon layer are protected by silk-screen plate; Glass dust is placed on silk-screen plate, then adopts flat board repeatedly to extrude at vertical direction, make glass dust filling groove, then scrape off unnecessary glass dust, and remove silk-screen plate;
3) glass dust that surface, viscosity gummed paper ad-hesion removal rate silicon column top exists is adopted;
4) under vacuum, glass dust silicon layer will be filled with and heat, make the complete melting of glass dust, and leaving no air bubbles inside, be cooled to room temperature again, obtain melten glass structure, this melten glass structure comprises the melten glass skeleton in silicon column top remained on surface melten glass and groove;
5) silicon layer obtaining melten glass structure is placed in corrosive liquid, adopts wet corrosion technique to remove the melten glass structure of silicon column top remained on surface, obtain the melten glass skeleton in groove;
6) adopt mechanical lapping mode, thinning for silicon layer bottom being machined to is exposed silicon column bottom, then adopt chemico-mechanical polishing mode to repair grinding damage, thus obtain the described three-dimensional through hole interconnection structure based on melten glass skeleton.
In step 1), described silicon layer can be the standard silicon chip that silicon chip, SOI sheet or Surface Machining have integrated circuit.Silicon layer preferably adopts local highly doped in the region making silicon post, makes the silicon post made have better conductivity like this.Described groove and silicon post can adopt the group technology of photoetching and DRI to make.
In step 2) in, described glass dust adopts the glass dust of nano-scale particle, and thermal coefficient of expansion and the silicon layer of glass dust are close, can reduce caused internal stress like this; In the process of glass dust filling groove, while the dull and stereotyped squeeze pressure of control vertical direction, can the aid dispersion modes such as mechanical oscillation be adopted, make the complete filling groove of glass dust.
In step 4), described heating is placed in vacuum tube furnace by the silicon layer being filled with glass dust to heat, and under vacuum, heating-up temperature is preferably higher than glass dust melt temperature 100 ~ 200 DEG C.
In step 5), described corrosive liquid is preferably hydrofluoric acid solution.
Compared with the prior art, beneficial effect of the present invention is as follows:
Three-dimensional through hole interconnection structure manufacture method based on melten glass skeleton of the present invention, make use of glass dust to fill etching groove in micro Process, and through follow-up sintering, reduction process, obtain the three-dimensional through hole interconnection structure of a class based on melten glass skeleton.Owing to adopting melten glass powder as through-hole structure skeleton, body silicon is as electric connection structure.Therefore do not need to grow insulating barrier, simplify processing step; Compared with, poor insulativity, connection reliability restricted with metal filling processes Midst density after traditional silicon through hole insulating are low, greatly improve the via densities of through hole interconnection technique, electricity connection reliability and there is better insulating properties.Can be applicable to the interconnected making of through hole of integrated circuit and MEMS (micro electro mechanical system) parallel link.
Accompanying drawing explanation
Fig. 1 is existing conventional silicon through hole interconnect architecture fabrication processing schematic diagram.Respectively expression is marked: 1. etching groove in Fig. 1; 2. silicon post; 5. insulating barrier; 6. Seed Layer; 7. plated metal; 01. silicon chip.
Fig. 2 is the three-dimensional through hole interconnection structure embodiment Making programme schematic diagram based on melten glass skeleton of the present invention.Respectively expression is marked: 1. etching groove in Fig. 2; 2. silicon post; 3. nano-glass powder; 4. melten glass structure; 401. melten glass skeletons; 402. silicon column top remained on surface melten glass; 01. silicon chip; 02. silk-screen plate; 03. is dull and stereotyped.
The product structure schematic diagram that Fig. 3 obtains based on the three-dimensional through hole interconnection structure embodiment manufacture method of melten glass skeleton for employing is of the present invention.Respectively expression is marked: 2. silicon post in Fig. 3; 401. melten glass skeletons; 01. silicon chip.
Fig. 4 is the three-dimensional through hole interconnection structure section SEM schematic diagram of silicon post upper end with residual melten glass structure.Respectively expression is marked: 2. silicon post in Fig. 4; 401. melten glass skeletons; 402. silicon column top remained on surface melten glass.
Embodiment
See Fig. 2, the three-dimensional through hole interconnection structure embodiment Making programme based on melten glass skeleton of the present invention, comprises the following steps:
1) on silicon chip 01, adopt the group technology of photoetching and DRIE to process, obtain groove 1 and silicon post 2, as shown in Fig. 2 (a);
2) adopting with pierced pattern, thickness is 200 μm of silk-screen plates 02, makes it aim at silicon chip 01, ensure that pierced pattern aligns with silicon chip 01 etch silicon columnar region, and all the other regions of silicon chip 01 is protected by silk-screen plate.Select nano-glass powder 3(fusing point 530 DEG C, thermal coefficient of expansion 4.0) be placed in silk-screen plate 02, adopt dull and stereotyped 03 vertical direction reciprocating motion, repeatedly extrude nano-glass powder 3, make to fill nano-glass powder 3 completely in groove, and utilize blade to scrape off nano-glass powder 3 higher than silk-screen plate, as shown in Fig. 2 (b);
3) adopt viscosity gummed paper, glue and remove the most nano-glass powder 3 of silicon post 2 top surface, as shown in Fig. 2 (c);
4) processing silicon chip 01 is placed in vacuum annealing furnace, 10
-2under the condition of Pa, be heated to 630 DEG C, insulation 2h, ensure the nano-glass complete melting of powder 3 and leaving no air bubbles inside, obtain melten glass structure 4 as Suo Shi Fig. 2 (d), remain melten glass 402 comprising silicon post 2 top surface, and the melten glass skeleton 401 in groove 1;
5) silicon chip 01 after heating is statically placed in HF acid solution, the control corrosion rate time, silicon post 2 top surface melten glass 402 is corroded completely, obtains the glass skeleton 401 as Suo Shi Fig. 2 (e) in groove 1;
6) grinding technics is adopted to expose bottom silicon post 2 by being thinned to bottom silicon chip 01, and adopt chemico-mechanical polishing reparation to grind the surface damage caused, obtain the three-dimensional through hole interconnection structure based on melten glass skeleton of the present invention as Suo Shi Fig. 2 (f).
See the product structure schematic diagram that Fig. 3, Fig. 3 obtain based on the three-dimensional through hole interconnection structure embodiment manufacture method of melten glass skeleton for employing is of the present invention.
Be the section SEM schematic diagram that in manufacturing process, silicon post 2 top surface remains the three-dimensional through hole interconnection structure of melten glass 402 see Fig. 4, Fig. 4.
Claims (6)
1., based on a three-dimensional through hole interconnection structure manufacture method for melten glass skeleton, it is characterized in that, comprise the following steps:
1) on silicon layer, etch groove, form protruding silicon post simultaneously;
2) pattern after being etched with silicon layer by the figuratum silk-screen plate of band is aimed at, and on guarantee silk-screen plate, pierced pattern is covered on the groove that etches, and all the other area parts of silicon layer are protected by silk-screen plate; Glass dust is placed on silk-screen plate, then adopts flat board repeatedly to extrude at vertical direction, make glass dust filling groove, then scrape off unnecessary glass dust, and remove silk-screen plate;
3) glass dust that surface, viscosity gummed paper ad-hesion removal rate silicon column top exists is adopted;
4) under vacuum, glass dust silicon layer will be filled with and heat, make the complete melting of glass dust, and leaving no air bubbles inside, be cooled to room temperature again, obtain melten glass structure, this melten glass structure comprises the melten glass skeleton in silicon column top remained on surface melten glass and groove;
5) silicon layer obtaining melten glass structure is placed in corrosive liquid, adopts wet corrosion technique to remove the melten glass structure of silicon column top remained on surface, obtain the melten glass skeleton in groove;
6) adopt mechanical lapping mode, thinning for silicon layer bottom being machined to is exposed silicon column bottom, then adopt chemico-mechanical polishing mode to repair grinding damage, thus obtain the three-dimensional through hole interconnection structure based on melten glass skeleton of the present invention.
2. a kind of three-dimensional through hole interconnection structure manufacture method based on melten glass skeleton as claimed in claim 1, is characterized in that, in step 1) in, the standard silicon chip that described silicon layer is silicon chip, SOI sheet or Surface Machining have integrated circuit.
3. a kind of three-dimensional through hole interconnection structure manufacture method based on melten glass skeleton as claimed in claim 1, it is characterized in that, in step 1) in, described silicon layer adopts local highly doped in the region making silicon post, and described groove and silicon post adopt the group technology of photoetching process and DRIE to make; Described DRIE is dry etch process.
4. a kind of three-dimensional through hole interconnection structure manufacture method based on melten glass skeleton as claimed in claim 1, is characterized in that, in step 2) in, described glass dust adopts the glass dust of nano-scale particle.
5. a kind of three-dimensional through hole interconnection structure manufacture method based on melten glass skeleton as claimed in claim 1, it is characterized in that, in step 4) in, described heating is placed in vacuum tube furnace by the silicon layer being filled with glass dust to heat, under vacuum, heating-up temperature is higher than glass dust melt temperature 100 ~ 200 DEG C.
6. a kind of three-dimensional through hole interconnection structure manufacture method based on melten glass skeleton as claimed in claim 1, is characterized in that, in step 5) in, described corrosive liquid is hydrofluoric acid solution.
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| CN104401934B (en) | 2014-12-11 | 2016-02-24 | 东南大学 | Glass substrate is imbedded the wafer level manufacture method of passive element |
| CN105399050B (en) * | 2015-12-18 | 2017-01-25 | 东南大学 | Wafer-level preparation method of glass substrate integrating chip heat radiation structure and passive devices |
| CN109896497A (en) * | 2019-01-31 | 2019-06-18 | 厦门大学 | A kind of Nano glass powder reflux technique towards MEMS package |
| EP3705451A1 (en) | 2019-03-06 | 2020-09-09 | Murata Manufacturing Co., Ltd. | Mems structure including a cap with a via |
| CN109928359B (en) * | 2019-03-25 | 2021-08-27 | 机械工业仪器仪表综合技术经济研究所 | Microstructure packaging method and packaging device |
| CN111564107B (en) * | 2020-06-11 | 2022-06-21 | 厦门通富微电子有限公司 | Preparation method of display device |
| CN111524465B (en) * | 2020-06-11 | 2022-06-21 | 厦门通富微电子有限公司 | Preparation method of display device |
| CN111524466B (en) * | 2020-06-11 | 2022-06-21 | 厦门通富微电子有限公司 | Preparation method of display device |
| CN113380696B (en) * | 2021-04-26 | 2022-11-15 | 南方科技大学 | Deep groove filling method and deep groove filling structure |
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| US5496619A (en) * | 1992-05-14 | 1996-03-05 | Matsushita Electric Industrial Co., Ltd. | Assembly formed from conductive paste and insulating paste |
| US6150197A (en) * | 1997-04-25 | 2000-11-21 | The Whitaker Corp. | Method of fabricating heterolithic microwave integrated circuits |
| CN1394113A (en) * | 2001-06-05 | 2003-01-29 | 株式会社村田制作所 | Method for mfg. glass ceramic multi-substrate and glass ceramic multi-substrate |
| CN102790083A (en) * | 2012-07-18 | 2012-11-21 | 启东吉莱电子有限公司 | Improved silicon-controlled structure and production process thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745954A (en) * | 1993-07-26 | 1995-02-14 | Fujitsu Ltd | Manufacture of multilayer ceramic board |
| JPH09139429A (en) * | 1995-11-10 | 1997-05-27 | Nippon Steel Corp | Manufacture of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5496619A (en) * | 1992-05-14 | 1996-03-05 | Matsushita Electric Industrial Co., Ltd. | Assembly formed from conductive paste and insulating paste |
| US6150197A (en) * | 1997-04-25 | 2000-11-21 | The Whitaker Corp. | Method of fabricating heterolithic microwave integrated circuits |
| CN1394113A (en) * | 2001-06-05 | 2003-01-29 | 株式会社村田制作所 | Method for mfg. glass ceramic multi-substrate and glass ceramic multi-substrate |
| CN102790083A (en) * | 2012-07-18 | 2012-11-21 | 启东吉莱电子有限公司 | Improved silicon-controlled structure and production process thereof |
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