CN103411516A - MEMS (micro electro mechanical system) double-layer film unit out-of-plane curvature testing structure - Google Patents
MEMS (micro electro mechanical system) double-layer film unit out-of-plane curvature testing structure Download PDFInfo
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Abstract
The invention provides an MEMS (micro electro mechanical system) double-layer film unit out-of-plane curvature testing structure. A measuring unit consists of two double-layer film portal structures and an error measuring cursor, wherein the two double-layer film portal structures are left and right double-layer film portal structures in opposite arrangement, the error measuring cursor consists of a left part and a right part, the double-layer film portal structures consist of an anchor region and two straight beams and are formed through overlapping an upper layer film material and a lower layer film material, one end of the straight beam is connected with the anchor region, the other end of the straight beam of the left double-layer film portal structure is connected with the straight beam of the left half part of the error measuring cursor, and the other end of the straight beam of the right double-layer film portal structure is connected with the straight beam of the right half part of the error measuring cursor. The simple double-layer film portal structure is utilized, in addition, the error measuring cursor is matched, the out-of-plane curvature of double-layer films formed by the MEMS common-use film materials can be obtained, in addition, the structure can be popularized to the testing under the condition of film materials with more layers, and a measuring method and a parameter extraction calculation method are very simple.
Description
Technical field
The invention provides the test structure of a kind of micro electronmechanical bilayer film unit far from the face bending curvature, belong to MEMS (micro electro mechanical system) (MEMS) material parameter technical field of measurement and test.
Background technology
Performance and the material parameter of micro electro mechanical device have close relationship, impact due to process, some material parameters will change, and the uncertain factor that these are caused by processing technology will make designs and performance prediction uncertain and unsettled situation occur.
In manufacturing the micro electro mechanical device structure, use widely membraneous material, especially in the surface micro structure, membraneous material is the material of main part of structured material, usually adopt chemical vapor deposition (CVD) method or physical vapor deposition (PVD) manufacture to obtain, such as silicon nitride, polysilicon, silicon dioxide, metal level etc.These membraneous materials will produce internal stress and namely have unrelieved stress in process.Unrelieved stress is divided into compressive stress and tension stress.After micro electromechanical structure is released, unrelieved stress will cause structure initial deformation occurs or produce the impact on the other materials parameter, cause actual performance departing from design performance.In sandwich construction, due to the stress intensity difference of each thin layer be superimposed, the stress attribute is also different, therefore causes laminate film to occur from the face bending.Measurement depends on special electronics/optical test equipment from the method major part of face bending curvature, as the membrane stress distribution detector.
The present invention proposes the test structure of a kind of micro electronmechanical bilayer film unit far from the face bending curvature.Utilize two bilayer film door type structures staggered relatively and coordinate the error of measurement vernier, can obtain MEMS bilayer film commonly used unit from face bending curvature radius, and can be generalized to more multi-layered membraneous material situation, the computing method of measuring method and parameter extraction are very simple.
Summary of the invention
Sandwich construction, typical MEMS lamination semi-girder for example, because the stress intensity of each thin layer be superimposed is different from attribute, therefore, will cause the free end of semi-girder to upwarp or stay, namely occur from the face bending, straight beam becomes one section arc, and the projected length of beam shortens.If can measure the variation of arc length under same projected length, then, according to the projected length designed, can calculate radius-of-curvature.By radius-of-curvature, can calculate stress difference or stress gradient.
For achieving the above object, the technical solution used in the present invention is:
The present invention proposes the test structure of a kind of micro electronmechanical bilayer film unit far from the face bending curvature, this test structure is comprised of two of left and right bilayer film door type structure staggered relatively and error of measurement vernier, it is characterized in that:
Described error of measurement vernier is comprised of left and right two parts, its left-half comprises a plurality of identical and T-shape structures that dextrorotation turn 90 degrees, postrotational T-shape structure consists of horizontal rectangular and perpendicular vertical rectangle, the horizontal rectangular of each T-shape structure is connected with straight beam is vertical, two long limits of the vertical rectangle of T-shape structure are to mutatis mutandis baseline, wherein, long limit, right side is the A baseline, long limit, the left side is the B baseline, the size of all T-shape structures is identical, point-blank, the B baseline is on another straight line for all A baselines;
The right half part of described error of measurement vernier is by comb structure and be positioned at " protruding " type structure formation on tooth, comb structure consists of with the vertical some teeth that are connected to straight beam straight beam, one side adjacent with the T-shape structure is designed with " protruding " type structure on tooth, after subtracting 1, the number that the number of described " protruding " type structure equals tooth is multiplied by 2, on described " protruding " type structure, be that another group is aimed at baseline with vertical 4 straight lines of tooth, wherein leftmostly be that C1 aims at baseline, be followed successively by C2 to the right, C3, C4 aims at baseline, C1, C2 baseline spacing and C3, C4 baseline spacing is equal to [(" protruding " type number * 2-1) * △], wherein △ is the minimum resolution unit of vernier,
The C2 of " protruding " type structure topmost aims at separated time y in the level that baseline is the error of measurement vernier, and in level, separated time y is to the left margin of error of measurement vernier left-half straight beam and equal to the distance of error of measurement vernier right half part straight beam right margin;
Described bilayer film door type structure is formed by stacking by upper and lower double-layer films material, comprise anchor district and two straight beams, the upper layer of material size of straight beam slightly is narrower than subsurface material, the shape of two straight beams and measure-alike, one Duan Yumao district of two straight beams connects, described error of measurement vernier is by the subsurface material manufacture, and the straight beam of left side bilayer film door type structure is connected with the straight beam of error of measurement vernier left-half, and the right bilayer film door type structure straight beam is connected with the straight beam of error of measurement vernier right half part;
Total all is suspended in ，Mao district on substrate and is formed by stacking by trilaminate material except being fixed on substrate Shang Demao district, upwards be respectively the base layer support material from substrate, lower film material, topmost thin film material.
According to an aspect of the present invention, the tooth of described error of measurement vernier and T-shape spacing structure are arranged, and wherein the straight beam of right half part is parallel with the straight beam of left-half, and the tooth of right half part is parallel with the corresponding horizontal rectangular in bottom of left-half T-shape structure.
According to an aspect of the present invention, the B baseline is aimed at Base alignment: See Alignment, gap ratio C2, the C4 of A baseline and B baseline or large 1 △ of the spacing of C1, C3 with the C2 of " protruding " type structure topmost.
According to an aspect of the present invention, any two neighbouring " protruding " type structures, be arranged on following " protruding " type structure than top " protruding " type structure to left 2 △.So, the B baseline is aimed at baseline 2 △ that take over than the C2 of the 2nd " protruding " type structure, aims at baseline 4 △ that take over than the C2 of the 3rd " protruding " type structure, aims at baseline 6 △ that take over than the C2 of the 4th " protruding " type structure, than the C2 of the 5th " protruding " type structure, aim at baseline 8 △ that take over, the rest may be inferred; The A baseline is aimed at baseline 1 △ that takes over than the C4 of " protruding " type structure topmost, than the C4 of the 2nd " protruding " type structure, aim at baseline 3 △ that take over, than the C4 of the 3rd " protruding " type structure, aim at baseline 5 △ that take over, aim at baseline 7 △ that take over than the C4 of the 4th " protruding " type structure, the rest may be inferred.
According to an aspect of the present invention, described bilayer film door type structure is formed by stacking by upper and lower double-layer films material.Bilayer film door type structure You Mao district and two straight beams form.The shape and size of two straight beams are identical, and a Duan Yumao district of two straight beams connects.Consider the technique alignment error, in the straight beam part, the structure width of topmost thin film material is slightly less than the lower film material.
In application, when the straight beam of bilayer film door type structure occurs from the face bending, be connected to the left and right of the checking and examining vernier half part appearance of straight beam end from movement, and cause that alignment line is moved, can directly by error of measurement vernier alignment line amount of movement, read mobile distance thus.When amount of movement was 1 △, the A baseline was aimed at Base alignment: See Alignment with the C4 of the top " protruding " type structure, has meaned that the relative projected length of the formed curve arc long of straight beam of door type structure has increased △/2; When amount of movement was 2 △, the B baseline was aimed at Base alignment: See Alignment with the C2 of basipetal the 2nd " protruding " type structure, had meaned that the relative projected length of curve arc long has increased △; When amount of movement was 3 △, the A baseline was aimed at Base alignment: See Alignment with the C4 of basipetal the 2nd " protruding " type structure, has meaned that the relative projected length of curve arc long has increased by 3 △/2; When amount of movement was 4 △, the B baseline was aimed at Base alignment: See Alignment with the C2 of basipetal the 3rd " protruding " type structure, had meaned that the relative projected length of curve arc long has increased by 2 △; When amount of movement was 5 △, the A baseline was aimed at Base alignment: See Alignment with the C4 of from lower to upper the 3rd " protruding " type structure, has meaned that the relative projected length of curve arc long has increased by 5 △/2.By that analogy.
By arc length and projection straight line relation, can calculate from face bending curvature radius.Because the formed angle of straight beam and substrate is usually very little, the length of triangle hypotenuse is approximately equal to arc length, according to triangular relationship, also can approximate treatment obtains the radius-of-curvature of camber line.
Compared with prior art, the present invention has following beneficial effect:
Great advantage of the present invention is that method of testing is simple, and testing apparatus requires low, test process and test parameter value stabilization.Process is synchronizeed with micro electro mechanical device, there is no special processing request.Meet the requirement of on-line testing fully.Computing method only limit to the simple mathematical formula.On the other hand, error of measurement vernier provided by the present invention is not subjected to the impact of process deviation, the common situations occurred in processes is that the width of processing lines changes, for example over etching causes lines to attenuate and owes the lines that etching causes broadening, because structure of the present invention is same material, identical process, while therefore linewidth error occurring, the departure degree of the aligning baseline in T-shape structure and " protruding " type structure is identical, and be equidirectional, its relative position does not change.
The accompanying drawing explanation
To describe now as preferred but nonrestrictive embodiment of the present invention, these and other features of the present invention, aspect and advantage will become apparent when the reference accompanying drawing is read following detailed description, wherein:
Fig. 1 is vertical view of the present invention.
Fig. 2 is projection cursor structure figure of the present invention.
Fig. 3 is projection vernier local structural graph of the present invention.
Fig. 4 is projection vernier scale aligned relationship figure of the present invention.
In figure, have: 101-door type structure, 101-1 anchor district, 101-2,101-3-straight beam; 102-error of measurement vernier, 102-1-horizontal rectangular, 102-2-vertical rectangle, 102-3-straight beam, 102-4-straight beam, 102-11-tooth, 102-5～102-10-" protruding " type structure;
100-substrate, 103-base layer support material, 104-lower film material, 105-topmost thin film material.
Embodiment
The following description is only exemplary and be not in order to limit the disclosure, application or purposes in essence.Should be understood that, in whole accompanying drawings, corresponding Reference numeral means identical or corresponding parts and feature.
1～4 couple of the present invention does further description below in conjunction with accompanying drawing.
The present invention proposes the test structure of a kind of micro electronmechanical bilayer film unit far from the face bending curvature.As shown in Figure 1, this test structure is comprised of two of left and right bilayer film door type structure 101 staggered relatively and error of measurement vernier 102.
Described error of measurement vernier 102 is comprised of left and right two parts.The core texture of error of measurement vernier left-half is the T-shape structure, and the core texture of right half part is " protruding " type structure.Two " protruding " type structures that each T-shape head is adjacent with its upper and lower both sides are certain aligned relationship.
Wherein, the left-half of error of measurement vernier 102 comprises the T-shape structure that a plurality of sizes are identical and dextrorotation turn 90 degrees, " | " of T-shape structure partly (bottom) is horizontal rectangular structure 102-1, " one " of T-shape structure partly (top) is vertical rectangular configuration 102-2, the horizontal rectangular 102-1 of each T-shape structure and vertical a connection of vertical beam 102-3.The corresponding vertical rectangle 102-2 in " one " (top) of T-shape structure, its two long limits are to mutatis mutandis baseline, and wherein, long limit, right side is the A baseline, and long limit, the left side is the B baseline.Because the size of all T-shape structures is identical, so point-blank, the B baseline is on another straight line for the A baseline of all T-shape structures.
The right half part of error of measurement vernier 102 comprises two formants: comb structure and be positioned at " protruding " type structure on tooth.Comb structure consists of with the vertical some tooth 102-11 that are connected to straight beam 102-4 a straight beam 102-4.One side adjacent with the T-shape structure is designed with " protruding " type structure (102-5～102-10) on tooth.After the number that the number of " protruding " type structure equals tooth subtracts 1, be multiplied by 2, the number of the present embodiment tooth is 4, so the number of " protruding " type structure is 6.On " protruding " type structure, be that another group is aimed at baseline with vertical 4 straight lines of tooth, wherein, the leftmost C1 of being aims at baseline, is followed successively by C2, C3 to the right, C4 aims at baseline.C1, C2 baseline spacing and C3, C4 baseline spacing equal [(" protruding " type number * 2-1) * △], and △ is that the minimum of vernier is differentiated unit, and the above-mentioned baseline spacing of the present embodiment is 11 △.
The tooth of described error of measurement vernier and T-shape spacing structure are arranged, wherein the straight beam 102-4 of right half part is parallel with the straight beam 102-3 of left-half, and partly (bottom) corresponding rectangle 102-1 is parallel for " | " of the tooth 102-11 of right half part and left-half T-shape structure.
By accompanying drawing 3, can be seen, the B baseline is aimed at Base alignment: See Alignment with the C2 of " protruding " type structure 102-5 topmost.Gap ratio C2, the C4(C1 of A baseline and B baseline, C3) large 1 △ of spacing.
By accompanying drawing 4, can be seen, any two neighbouring " protruding " type structures, below " protruding " type structure than top " protruding " type structure to left 2 △, so, the B baseline is aimed at baseline 2 △ that take over than the C2 of the 2nd " protruding " type structure 102-6, than the C2 of the 3rd " protruding " type structure 102-7, aim at baseline 4 △ that take over, than the C2 of the 4th " protruding " type structure 102-8, aim at baseline 6 △ that take over, than the C2 of the 5th " protruding " type structure 102-9, aim at baseline 8 △ that take over, aim at baseline 10 △ that take over than the C2 of the 6th " protruding " type structure 102-10; The A baseline is aimed at baseline 1 △ that takes over than the C4 of " protruding " type structure 102-5 topmost, than the C4 of the 2nd " protruding " type structure 102-6, aim at baseline 3 △ that take over, than the C4 of the 3rd " protruding " type structure 102-7, aim at baseline 5 △ that take over, than the C4 of the 4th " protruding " type structure 102-8, aim at baseline 7 △ that take over, than the C4 of the 5th " protruding " type structure 102-9, aim at baseline 9 △ that take over, aim at baseline 11 △ that take over than the C4 of the 6th " protruding " type structure 102-10.
The C2 of " protruding " type structure 102-5 topmost aims at separated time y in the level that baseline is whole error of measurement vernier 102, and y is to the left margin of error of measurement vernier 102 left-half straight beam 102-3 and equal to the distance of error of measurement vernier right half part straight beam 102-4 right margin.
Described bilayer film door type structure 101 is formed by stacking by upper and lower double-layer films material (105,104).Bilayer film door type structure 101You Mao district 101-1 and two straight beams (101-2 and 101-3) form.The shape of two straight beams (101-2,101-3) and measure-alike.One Duan Yumao district (101-1) of two straight beams (101-2,101-3) connects.Upper layer of material 105 sizes of straight beam slightly are narrower than subsurface material 104.
The straight beam 101-2(101-3 of left side bilayer film door type) connect the straight beam 102-3 of error of measurement vernier left-half, the straight beam 101-2(101-3 of the bilayer film door type structure on the right) connect the straight beam 102-4 of error of measurement vernier right half part.
The error of measurement vernier is manufactured by ground floor membraneous material 104.
Total all is suspended in ，Mao district 101-1 on substrate 100 and is formed by stacking by trilaminate material except being fixed on substrate Shang Demao district 101-1, from substrate 100, upwards be respectively base layer support material 103, lower film material 104, topmost thin film material 105.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (4)
1. a micro electronmechanical bilayer film unit is far from the test structure of face bending curvature, and this test structure is comprised of two of left and right bilayer film door type structure (101) staggered relatively and error of measurement vernier (102), it is characterized in that:
Described error of measurement vernier (102) is comprised of left and right two parts, its left-half comprises a plurality of identical and T-shape structures that dextrorotation turn 90 degrees, postrotational T-shape structure consists of horizontal rectangular (102-1) and perpendicular vertical rectangle (102-2), the horizontal rectangular of each T-shape structure (102-1) and vertical connection of straight beam (102-3), two long limits of the vertical rectangle (102-2) of T-shape structure are to mutatis mutandis baseline, wherein, long limit, right side is the A baseline, long limit, the left side is the B baseline, the size of all T-shape structures is identical, all A baselines point-blank, the B baseline is on another straight line,
The right half part of described error of measurement vernier (102) is by comb structure and be positioned at " protruding " type structure formation on tooth, comb structure consists of with the vertical some teeth (102-11) that are connected to straight beam (102-4) straight beam (102-4), on the upper one side adjacent with the T-shape structure of tooth (102-11), be designed with " protruding " type structure (102-5～102-10), after subtracting 1, the number that the number of described " protruding " type structure equals tooth (102-11) is multiplied by 2, on described " protruding " type structure, be that another group is aimed at baseline with vertical 4 straight lines of tooth, wherein leftmostly be that C1 aims at baseline, be followed successively by C2 to the right, C3, C4 aims at baseline, C1, C2 baseline spacing and C3, C4 baseline spacing is equal to [(" protruding " type number * 2-1) * △], wherein △ is the minimum resolution unit of vernier,
The C2 of " protruding " type structure (102-5) topmost aims at separated time y in the level that baseline is error of measurement vernier (102), and in level, separated time y is to the left margin of error of measurement vernier (102) left-half straight beam (102-3) and equal to the distance of error of measurement vernier right half part straight beam (102-4) right margin;
Described bilayer film door type structure (101) is by upper and lower double-layer films material (105, 104) be formed by stacking, comprise anchor district (101-1) and two straight beam (101-2, 101-3), the upper layer of material of straight beam (105) size slightly is narrower than subsurface material (104), two straight beam (101-2, shape 101-3) and measure-alike, two straight beam (101-2, a Duan Yumao district (101-1) 101-3) connects, described error of measurement vernier (102) is manufactured by subsurface material (104), the straight beam of left side bilayer film door type structure is connected with the straight beam (102-3) of error of measurement vernier (102) left-half, the right bilayer film door type structure straight beam is connected with the straight beam (102-4) of error of measurement vernier (102) right half part,
Total all is suspended on substrate (100) except being fixed on substrate Shang Demao district (101-1), described anchor district (101-1) is formed by stacking by trilaminate material, from substrate (100), upwards be respectively base layer support material (103), lower film material (104), topmost thin film material (105).
2. micro electronmechanical bilayer film according to claim 1 unit is far from the test structure of face bending curvature, it is characterized in that, the tooth of described error of measurement vernier and T-shape spacing structure are arranged, wherein the straight beam of right half part (102-4) is parallel with the straight beam (102-3) of left-half, and the tooth of right half part (102-11) is parallel with the bottom corresponding horizontal rectangular (102-1) of left-half T-shape structure.
3. micro electronmechanical bilayer film according to claim 1 unit is far from the test structure of face bending curvature, it is characterized in that: the B baseline is aimed at Base alignment: See Alignment, gap ratio C2, the C4 of A baseline and B baseline or large 1 △ of the spacing of C1, C3 with the C2 of " protruding " type structure (102-5) topmost.
4. micro electronmechanical bilayer film according to claim 1 unit is far from the test structure of face bending curvature, it is characterized in that any two neighbouring " protruding " type structures, be arranged on following " protruding " type structure than top " protruding " type structure to left 2 △.
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Cited By (2)
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| CN105547542A (en) * | 2016-01-15 | 2016-05-04 | 东南大学 | Structure for testing stress gradient of MEMS micro beam with detection hole, and measurement method |
| CN107894200A (en) * | 2017-09-28 | 2018-04-10 | 东南大学 | A kind of curvature sensor of more two-end fixed beam structures |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105547542A (en) * | 2016-01-15 | 2016-05-04 | 东南大学 | Structure for testing stress gradient of MEMS micro beam with detection hole, and measurement method |
| CN105547542B (en) * | 2016-01-15 | 2018-02-13 | 东南大学 | The test structure and measuring method of a kind of micro- stress beam gradients of MEMS with detection hole |
| CN107894200A (en) * | 2017-09-28 | 2018-04-10 | 东南大学 | A kind of curvature sensor of more two-end fixed beam structures |
| CN107894200B (en) * | 2017-09-28 | 2019-02-15 | 东南大学 | A kind of curvature sensor of more two-end fixed beam structures |
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