CN103401141A - Direct modulation distributed feedback semiconductor laser-based photoelectric oscillator - Google Patents
Direct modulation distributed feedback semiconductor laser-based photoelectric oscillator Download PDFInfo
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Abstract
The invention discloses a direct modulation distributed feedback semiconductor laser-based photoelectric oscillator. The characteristic that a semiconductor laser has maximum modulation efficiency at relaxation oscillation frequency is utilized, and a distributed feedback semiconductor laser is used for simultaneously realizing photoelectric conversion and photonic microwave filtering functions without an additional electro-optic modulator and an additional narrow-band electric filter. The relaxation oscillation frequency of the laser is tuned by tuning the bias current and the working temperature of the laser to finally realize the large-range frequency tuning of the photoelectric oscillator.
Description
Technical field
The present invention relates to the optical-electronic oscillator technical field, particularly the tunable optical-electronic oscillator of a kind of wideband frequency based on direct modulation profile feedback type semiconductor laser.
Background technology
In the application such as satellite communication, radar system, precision instrumentation and high-acruracy survey, usually need high signal quality, microwave signal that frequency is adjustable.So-called signal quality mainly refers to the short-term frequency stability of microwave signal, i.e. phase noise, and long-time stability, i.e. frequency drift.Traditional high-quality microwave signal source is employing sound energy-storage travelling wave tube (for example quartz crystal) or microwave energy-storage element (for example dielectric cavity) formation resonant cavity generally.But these energy-storage travelling wave tubes only have the resonance point of several high Q values in low-frequency range, and obtain high-frequency microwave signal need to be by the method generation of frequency multiplication, but frequency multiplication can be brought make an uproar the mutually remarkable decline of performance of signal.X.Steve Yao in 1996 and Lute Maleki have proposed optical-electronic oscillator first.Optical-electronic oscillator utilizes the energy of the photoelectricity resonant cavity storage microwave of high Q value, can produce microwave, the millimeter-wave signal of high spectrum purity, low phase noise, and phase noise characteristic and frequency-independent, can not descend along with the raising of frequency.Therefore compare with the traditional microwave oscillator, optical-electronic oscillator has more advantage in the field that needs the low noise high-frequency signal source.
The optical-electronic oscillator of traditional structure generally is comprised of a lasing light emitter and an electro-optical feedback loop, and the electro-optical feedback loop comprises electrooptic modulator, long-distance optical fiber, high-speed photodetector, microwave amplifier, arrowband microwave filter, the opto-electronic devices such as micro-wave coupler.Fiber lengths is longer, and the energy storage time in electro-optical feedback loop is just longer, and the phase noise of signal will be less, and meanwhile, the mode spacing of optical-electronic oscillator can reduce, and therefore the microwave filter of the high Q value of needs guarantees the single-mode oscillation of optical-electronic oscillator.In addition, the frequency adjustability is a key property of microwave signal source, but owing to being difficult to produce the adjustable microwave filter in high Q value broadband, the optical-electronic oscillator of traditional structure only has tens to hundreds of MHz frequency tuning range.In addition, high-speed electro-optic modulator and high Q value microwave filter are expensive, and cost remains to be reduced from the angle of application.
Therefore, a technical problem that in the urgent need to this area researcher, solves at present is exactly: the optical-electronic oscillator that how can propose a kind of economical and practical, compact conformation with innovating, to solve the deficiencies in the prior art, and can effectively meet the wideband adjustable of optical-electronic oscillator simultaneously.
Summary of the invention
Technical problem: the purpose of this invention is to provide a kind of optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser, in order to economical and practical, compact conformation and the wideband adjustable of realizing optical-electronic oscillator.
Technical scheme: a kind of optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser of the present invention is based on an optoelectronic oscillation ring simple in structure that does not comprise electrooptic modulator and electrical filter, and this optoelectronic oscillation ring comprises distributed feedback type semiconductor laser, monomode fiber, 10:90 optical branching device, optical-electrical converter, low noise wideband microwave amplifier, 10:90 electric shunt, electric adjustable attenuator; Wherein, distributed feedback type semiconductor laser, monomode fiber, 10:90 optical branching device, optical-electrical converter are connected in turn by optical fiber; Optical-electrical converter, low noise wideband microwave amplifier, 10:90 electric shunt, electric adjustable attenuator, distributed feedback type semiconductor laser are connected in turn by the microwave coaxial line; By regulating bias current and the working temperature of distributed feedback type semiconductor laser, at the 90% tunable high-quality microwave signal of end generation wideband frequency of 10:90 electric shunt.
Described distributed feedback type semiconductor laser is the single-mode laser with the internal insulation device of general commercial.
Described monomode fiber is standard single-mode fiber G.652.
Described 10:90 optical branching device is the optical coupler that 1. with two output ports of port form by an input port; Wherein first output port is that 2. port exports 10% energy, and second output port is that 3. port exports 90% energy.
Described 10:90 electric shunt is that 4. with two output ports of port are the electric coupling that 6. 5. port form with port by an input port; The energy of its middle port 5 outputs 10%, the energy of port 6 outputs 90%.
Described electric adjustable attenuator attenuation should be greater than 20dB.
Beneficial effect: can find out from technique scheme, compared with prior art, the present invention has following beneficial effect:
1, the optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser provided by the invention, utilize semiconductor laser to have the characteristic of maximum modulation efficiency at the relaxation oscillation frequency place, realized simultaneously the function of electric light conversion and photon microwave filtering with a distributed feedback type semiconductor laser, need not extra electrooptic modulator and high Q value microwave filter, simple in structure, economical and practical.
2, the optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser provided by the invention, tuning by the tuning realization to laser bias current and working temperature to the laser relaxation oscillation frequency, final realize tuningly to the wide range of frequencies of optical-electronic oscillator, tuning manner is simple and convenient, be easy to realize.
3, the optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser provided by the invention, can carry out the tuning of microwave frequency in very wide scope, tuning range only is subject to the bandwidth of design parameter and package level, optical-electrical converter and the low noise wideband microwave amplifier of distributed feedback type semiconductor laser.
4, the optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser provided by the invention, owing to having utilized the microwave energy-storage element of monomode fiber as high Q value, the microwave signal of this optical-electronic oscillator output has splendid phase noise characteristic.
Description of drawings
For further illustrating technology contents of the present invention, the invention will be further described below in conjunction with accompanying drawing, wherein:
Fig. 1 is the structural representation of a kind of optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser provided by the invention.
Fig. 2 is the light signal spectrum shape of optical-electronic oscillator output when in example 1, frequency of oscillation is 8.752GHz.
Fig. 3 is that the tuning range that produces in example 1 is the microwave signal of 2.659～8.752GHz.
Fig. 4 is that the frequency that produces in example 1 is the phase noise curve chart of the microwave signal of 8.752GHz.
Embodiment
For achieving the above object, the invention discloses a kind of optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser, described optical-electronic oscillator comprises:
Distributed feedback type semiconductor laser, be used on the one hand realizing the electric light conversion, vibrate in the photoelectricity storage chamber after the frequency of oscillation of optical-electronic oscillator is converted to light signal, the characteristic equivalence that utilizes on the other hand semiconductor laser to have maximum modulation efficiency at the relaxation oscillation frequency place realizes photon filtering;
Monomode fiber, be used as high Q value microwave energy-storage element, and length is several meters to thousands of meters and does not wait;
Optical branching device, choose the light signal output of a part as oscillator for the light signal that will carry frequency of oscillation according to preset need, and remainder is transferred to optical-electrical converter and is converted to the signal of telecommunication;
Optical-electrical converter, convert the signal of telecommunication to for the light signal that will carry the ring cavity frequency of oscillation, and the electric signal transmission after changing is to microwave amplifier;
Low noise wideband microwave amplifier, be used for amplifying the microwave signal after photodetector transforms, and makes the optical-electronic oscillator system gain greater than oscillation threshold;
Electric shunt, be used for receiving the signal of telecommunication that microwave amplifier amplifies, and according to preset need, choose the electric signal transmission of a part of microwave energy as oscillator, and remainder is transferred to electric adjustable attenuator;
The electricity adjustable attenuator, be used for controlling the ring cavity gain, makes distributed feedback type semiconductor laser be operated in the small signal modulation state.
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Fig. 1 is the structural representation of the optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser provided by the invention.as shown in Figure 1, the laser that distributed feedback type semiconductor laser 1 sends is divided into two-way by a 10:90 optical branching device 3 after section single-mould fiber 2 transmission, 10%De Yi road (port 2.) is received optical spectrum analyzer 9 and is used for the spectral signal of monitoring oscillator output, 90% De Nayi road (port 3.) enters an optical-electrical converter 4, output electrical signals is divided into two-way by a 90:10 electric shunt 6 after a low noise wideband microwave amplifier 5 amplifies, 90%De Yi road (port 6.) is received electric spectrum analyzer 8 and is used for analyzing the signal of telecommunication of oscillator output, distributed feedback type semiconductor laser 1 is received on 10% De Nayi road (port 5.) after an electric adjustable attenuator decay radio frequency mouth makes loop closed.6. 2. port be respectively the output of light signal of the present invention and vibration microwave signal with port.
[embodiment 1] with reference to Fig. 1, select the parameter of main devices used as follows: distributed feedback type semiconductor laser 1, three dB bandwidth are 10GHz; Monomode fiber 2, long is 2.77Km; Optical-electrical converter 4, three dB bandwidth are 10GHz, and responsiveness is 0.9A/W; Low noise amplifier 5, the small-signal amplification mode, working frequency range is 1～18GHz, gains as 35dB; Adjustable attenuator 7, attenuation are adjustable continuously between 0～30dB.Wherein said distributed feedback type semiconductor laser 1 is the single-mode laser with the internal insulation device of general commercial.Described monomode fiber 2 is standard single-mode fibers G.652.Described optical-electrical converter 4 is photo-detectors that put across resistance the band outside.Experimental result respectively as shown in Figure 2, Figure 3, Figure 4.Can see that experiment has produced the microwave signal of 2.659～8.752GHz wideband adjustable, and the microwave signal that produces at the phase noise at 10kHz frequency deviation place all lower than-104dB/Hz.
Operation principle of the present invention is as follows: initial, the noise of low noise wideband microwave amplifier 5 outputs is through being loaded into the electrical input of distributed feedback type semiconductor laser 1 after electric shunt 6 and electric adjustable attenuator 7.Therefore the sharp light of penetrating of distributed feedback type semiconductor laser 1 is modulated by the noise of low noise wideband microwave amplifier 5 outputs, signal after modulation, through again entering low noise wideband microwave amplifier 5 after monomode fiber 2, optical branching device 3 and optical-electrical converter 4, forms the photoelectricity positive feedback.Because being carried out direct modulation, distributed feedback type semiconductor laser 1 realized the electric light conversion in the loop, so need not additionally to use expensive photoelectric external modulator.In addition,, due to low-loss, the truetimedelay characteristic of monomode fiber 2 as microwave delay line, have the equally spaced high Q value oscillation mode of a series of frequencies in above-mentioned electro-optical feedback loop, the phase noise characteristic of each pattern is splendid.Meanwhile, because distributed feedback type semiconductor laser 1 has maximum modulation efficiency at the relaxation oscillation frequency place, so the noise corresponding to the relaxation oscillation frequency place in the initial noise of ring cavity will obtain the maximum feedback gain, energy will concentrate on this frequency place after ring cavity circulation vibration, namely this frequency will become main mould, thereby need not high Q value microwave filter and also can realize single-mode oscillation.
In addition, because the relaxation oscillation frequency of semiconductor laser is determined by following formula,
F in formula
rBe relaxation oscillation frequency, g is difference gain of light coefficient, γ
pFor photon attenuation speed, P
0For laser cavity homeostasis photon density.Thereby can obtain different relaxation oscillation frequency by the design parameter of careful setting laser device, then obtain different ring cavity frequencies of oscillation.And, for a semiconductor laser of having made, can, by changing the bias current of laser, then change laser cavity homeostasis photon density P
0Perhaps, by changing the working temperature of laser, then change photon attenuation speed γ in laser cavity
pChange the relaxation oscillation frequency f of laser
r, finally realize the change of ring cavity frequency of oscillation.In brief, can be simply bias current by changing distributed feedback type semiconductor laser 1 and the working temperature frequency of oscillation that realizes oscillator output of the present invention tuning.
In addition, because the present invention is based on the optical-electronic oscillator that direct modulation profile feedback type semiconductor laser 1 is realized, thereby the peak frequency tuning range is by the modulation bandwidth decision of distributed feedback type semiconductor laser 1.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect have been carried out further detailed description; institute is understood that; the foregoing is only specific embodiments of the invention; its purpose just is used for helping to understand method of the present invention and core concept thereof, is not limited to the present invention, and is within the spirit and principles in the present invention all; any modification of making, be equal to replacement, improvement etc., within protection scope of the present invention all should be included in.
Claims (6)
1. the optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser, is characterized in that this optoelectronic oscillation ring comprises distributed feedback type semiconductor laser (1), monomode fiber (2), 10:90 optical branching device (3), optical-electrical converter (4), low noise wideband microwave amplifier (5), 10:90 electric shunt (6), electric adjustable attenuator (7); Wherein, distributed feedback type semiconductor laser (1), monomode fiber (2), 10:90 optical branching device (3), optical-electrical converter (4) are connected in turn by optical fiber; Optical-electrical converter (4), low noise wideband microwave amplifier (5), 10:90 electric shunt (6), electric adjustable attenuator (7), distributed feedback type semiconductor laser (1) are connected in turn by the microwave coaxial line; By regulating bias current and the working temperature of distributed feedback type semiconductor laser (1), at the 90% tunable high-quality microwave signal of end generation wideband frequency of 10:90 electric shunt (6).
2. the optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser according to claim 1, it is characterized in that: described distributed feedback type semiconductor laser (1) is the single-mode laser with the internal insulation device of general commercial.
3. the optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser according to claim 1 is characterized in that: described monomode fiber (2) is standard single-mode fiber G.652.
4. the optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser according to claim 1, it is characterized in that: described 10:90 optical branching device (3) is the optical coupler that 1. with two output ports of port form by an input port; Wherein first output port is that 2. port exports 10% energy, and second output port is that 3. port exports 90% energy.
5. the optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser according to claim 1 is characterized in that: described 10:90 electric shunt (6) is that 4. with two output ports of port are the electric coupling that 6. 5. port form with port by an input port; The energy of its middle port 5 outputs 10%, the energy of port 6 outputs 90%.
6. the optical-electronic oscillator based on direct modulation profile feedback type semiconductor laser according to claim 1, it is characterized in that: described electric adjustable attenuator (7) attenuation should be greater than 20dB.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104655954A (en) * | 2014-03-19 | 2015-05-27 | 李斐 | Passive transient analog signal capturing and electronic-optical and optical-electronic transducer |
| CN104901744A (en) * | 2014-03-05 | 2015-09-09 | 上海贝尔股份有限公司 | Power equalizer for equalizing power of uplink signal in optical line terminal (OLT) and OLT thereof |
| CN104934853A (en) * | 2015-07-06 | 2015-09-23 | 中国科学院半导体研究所 | A photoelectric oscillator based on a direct-modulation semiconductor dual-mode laser |
| CN106067650A (en) * | 2016-07-15 | 2016-11-02 | 中国科学院半导体研究所 | Based on the microwave generator of warbling amplifying feedback laser |
| CN110324018A (en) * | 2019-07-25 | 2019-10-11 | 合肥本源量子计算科技有限责任公司 | A kind of microwave signal annular delivery structure |
| CN112103755A (en) * | 2020-08-18 | 2020-12-18 | 电子科技大学 | Photoelectric oscillator based on directly-modulated light injection semiconductor laser |
| CN112928598A (en) * | 2021-01-20 | 2021-06-08 | 华中科技大学 | Regulation and control device of feedback type semiconductor laser |
| CN113394646A (en) * | 2021-06-15 | 2021-09-14 | 贵州航天计量测试技术研究所 | Tuned optoelectronic oscillator and feedback control method thereof |
| CN113660037A (en) * | 2021-08-11 | 2021-11-16 | 中国人民解放军陆军工程大学 | Detection device and detection method for photon-assisted detection of weak radio frequency signals |
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| CN104901744B (en) * | 2014-03-05 | 2018-02-27 | 上海诺基亚贝尔股份有限公司 | The power equalizer of power equalization and this OLT are carried out to upward signal in the olt |
| CN104655954A (en) * | 2014-03-19 | 2015-05-27 | 李斐 | Passive transient analog signal capturing and electronic-optical and optical-electronic transducer |
| CN104934853A (en) * | 2015-07-06 | 2015-09-23 | 中国科学院半导体研究所 | A photoelectric oscillator based on a direct-modulation semiconductor dual-mode laser |
| CN106067650A (en) * | 2016-07-15 | 2016-11-02 | 中国科学院半导体研究所 | Based on the microwave generator of warbling amplifying feedback laser |
| CN110324018A (en) * | 2019-07-25 | 2019-10-11 | 合肥本源量子计算科技有限责任公司 | A kind of microwave signal annular delivery structure |
| CN112103755A (en) * | 2020-08-18 | 2020-12-18 | 电子科技大学 | Photoelectric oscillator based on directly-modulated light injection semiconductor laser |
| CN112928598A (en) * | 2021-01-20 | 2021-06-08 | 华中科技大学 | Regulation and control device of feedback type semiconductor laser |
| CN112928598B (en) * | 2021-01-20 | 2022-04-01 | 华中科技大学 | Regulation and control device of feedback type semiconductor laser |
| CN113394646A (en) * | 2021-06-15 | 2021-09-14 | 贵州航天计量测试技术研究所 | Tuned optoelectronic oscillator and feedback control method thereof |
| CN113394646B (en) * | 2021-06-15 | 2022-09-23 | 贵州航天计量测试技术研究所 | Tuned optoelectronic oscillator and feedback control method thereof |
| CN113660037A (en) * | 2021-08-11 | 2021-11-16 | 中国人民解放军陆军工程大学 | Detection device and detection method for photon-assisted detection of weak radio frequency signals |
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Address after: No. 2, No. 210007, royal road, Nanjing, Jiangsu Patentee after: ARMY ENGINEERING University OF PLA Address before: No. 2, No. 210007, royal road, Nanjing, Jiangsu Patentee before: PLA University OF SCIENCE AND TECHNOLOGY |
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