CN103401067A - Eight-frequency band reconfigurable intelligent mobile phone antenna - Google Patents

Eight-frequency band reconfigurable intelligent mobile phone antenna Download PDF

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Publication number
CN103401067A
CN103401067A CN2013103433081A CN201310343308A CN103401067A CN 103401067 A CN103401067 A CN 103401067A CN 2013103433081 A CN2013103433081 A CN 2013103433081A CN 201310343308 A CN201310343308 A CN 201310343308A CN 103401067 A CN103401067 A CN 103401067A
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China
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bonding jumper
metal sheet
chip inductor
mobile phone
stamp
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CN2013103433081A
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CN103401067B (en
Inventor
姜涛
刘成丽
杨顺
张李弯
班永灵
陈智
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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Abstract

The invention discloses an eight-frequency band reconfigurable intelligent mobile phone antenna, and mainly solves the problems of failure in designing a small-size, low-section and multiple-frequency wideband intelligent mobile phone antenna in a given environment in the prior art, and failure in meeting the technical development requirement. The eight-frequency band reconfigurable intelligent mobile phone antenna comprises a housing, a dielectric plate in the housing, a metal plate on one surface of the dielectric plate, and further comprises a second bent metal strip group and a first bent metal strip group, wherein both the second bent metal strip group and the first bent metal strip group are arranged on the other surface of the dielectric plate; a feeding point (1) is connected to the first bent metal strip group; the first bent metal strip group as well as the second bent metal strip group comprises at least two metal strips, a diode, a patch inductor and a patch capacitor; the diode, the patch inductor and the patch capacitor are connected between the metal strips. According to the scheme, the purposes of miniaturization, eight working frequency covering capability and higher performance-price ratio are realized; the utility value and the popularization value are higher.

Description

Eight frequency range restructural smart mobile phone antennas
Technical field
The present invention relates to a kind of antenna for mobile phone, specifically, relate to a kind of eight frequency range restructural smart mobile phone antennas.
Background technology
Along with developing rapidly of communication system, mobile phone is by only providing single voice call service to be extended to the multimedia services such as online.At present, because network formats and frequency range that the Virtual network operator of every country adopts are different, therefore designing a antenna that can work in a plurality of frequency ranges becomes the main target of Antenna Design.
Antenna for mobile phone is as the gate inhibition of transmitting-receiving electromagnetic wave signal, service behaviour for whole cell phone system plays vital effect, usually adopt the mode of a plurality of antenna branch of design to make the antenna of design can work in a plurality of frequency ranges in prior art, more multiaspect is long-pending but this method will inevitably take, therefore the size of mobile phone also can become greatly, and the mobile phone that designs like this is unfavorable for the competition on terminal market.
Summary of the invention
The object of the present invention is to provide a kind of eight frequency range restructural smart mobile phone antennas, mainly solve the smart mobile phone antenna of designing small size in given environment, can realizing multiple frequency broad band work that is difficult to that exists in prior art, can not meet the problem of technical development demand.
To achieve these goals, the technical solution used in the present invention is as follows:
eight frequency range restructural smart mobile phone antennas, be arranged at the dielectric-slab in shell, be arranged at the metal ground on dielectric-slab one surface, all be arranged at the second bending bonding jumper group on another surface of dielectric-slab and be connected with first of distributing point and bend the bonding jumper group, described the first bending bonding jumper group and the second bending bonding jumper group are by an above bonding jumper, be connected in the stamp-mounting-paper diode between bonding jumper, chip inductor and patch capacitor form, it is characterized in that, described the first bending bonding jumper group comprises that upper left side is connected with the 3rd bonding jumper by the first chip inductor, right-hand member is connected with the first bonding jumper of the second bonding jumper by the first stamp-mounting-paper diode, the lower-left end of described the 3rd bonding jumper is connected with the first chip inductor, upper end is connected with the 4th bonding jumper by the second chip inductor and the second patch capacitor respectively, the lower end of described the 4th bonding jumper is connected with the second patch capacitor with the second chip inductor, right-hand member is connected with the 6th bonding jumper by the 3rd stamp-mounting-paper diode, the lower-left end of described the 6th bonding jumper is connected with the 3rd stamp-mounting-paper diode, lower end is connected with the 5th bonding jumper by the 4th stamp-mounting-paper diode, the upper right side of described the 5th bonding jumper is connected with the 4th stamp-mounting-paper diode, the lower-left end is connected with the 7th bonding jumper by the 3rd patch capacitor, bottom righthand side is connected with the 8th bonding jumper by the 4th chip inductor, described the 7th bonding jumper is connected by the 5th chip inductor with the 8th bonding jumper, described the 8th bonding jumper is connected with the second bonding jumper by the second stamp-mounting-paper diode, described distributing point is connected in the second bonding jumper lower end by the first patch capacitor, described the second bending bonding jumper group is connected with the upper end of the 6th bonding jumper.
Further, described the 4th bonding jumper consists of the first longitudinal metal sheet, the second transverse metal sheet of being vertically connected at the first transverse metal sheet of the first longitudinal metal sheet bottom righthand side and being vertically connected at the first longitudinal metal sheet upper right side, described the second chip inductor and the second patch capacitor all are connected in the first transverse metal sheet lower end, and described the 3rd stamp-mounting-paper diode is connected in the other end of the second transverse metal sheet corresponding to an end connected with the first longitudinal metal sheet.
Further, the lower-left end of the longitudinal metal sheet of described formation the 4th bonding jumper is connected with the first metallization via hole by the 3rd chip inductor.
specifically, described the second bending bonding jumper group comprises the 9th bonding jumper of " annular " that be connected in the 6th bonding jumper upper end, be positioned at the 9th bonding jumper outside by the 3rd transverse metal sheet and be connected in the tenth bonding jumper of " anti-L shaped " that the second longitudinal metal sheet on the 3rd transverse metal sheet right side forms, be connected in the 12 bonding jumper of the tenth bonding jumper upper end by the 7th chip inductor and the 11 bonding jumper, described the 12 bonding jumper lower end is connected with the 7th chip inductor, upper end is connected with the 13 bonding jumper, the left upper end of described the 13 bonding jumper is connected with the 14 bonding jumper.
Wherein, described the 12 bonding jumper, the 13 bonding jumper and the 14 bonding jumper are the integral type structure, and the plane, place is mutually vertical; Be loaded with the 6th chip inductor in described the 9th bonding jumper; The lower-left end of described the tenth bonding jumper is connected with the second metallization via hole.
Consider the convenience of enforcement, described the first bonding jumper and the 4th bonding jumper are communicated with by the first biasing circuit; The transverse metal sheet of described the tenth bonding jumper is communicated with by the 3rd biasing circuit with the 11 bonding jumper; Described the second bonding jumper is communicated with by the second biasing circuit with the 6th bonding jumper.
In the present invention, described the 11 bonding jumper for by the 3rd longitudinal metal sheet, be connected in the 4th transverse metal sheet of the 3rd longitudinal metal sheet bottom righthand side and be connected in " inverted U-shaped " structure that the 5th transverse metal sheet of the 3rd longitudinal metal sheet upper right side forms, the upper end of described the tenth bonding jumper is connected in the right-hand member of the 4th transverse metal sheet, and described the 7th chip inductor is connected in the upper right side of the 5th transverse metal sheet; And be connected with the 5th stamp-mounting-paper diode between described the 5th transverse metal sheet and the 4th transverse metal sheet.
Compared with prior art, the present invention has following beneficial effect:
(1) pass through each bonding jumper structure, the ingenious setting of each stamp-mounting-paper diode, chip inductor, patch capacitor, metallization via hole and biasing circuit, the present invention can meet the demand of GSM850/900, DCS1800, PCS1900, UMTS2100, LTE700/2300/2500 eight frequency range smart mobile phone radio communications, and simple in structure, size is little, be easy to control, and can meet the technical development demand.
(2) in the present invention, just can make antenna be in different operating states by the break-make of controlling biasing circuit, by add chip inductor between bonding jumper, effectively offset distributed capacitance, improve the impedance matching of antenna, realize broadband character, can realize the fine setting of low-frequency resonant frequency simultaneously; Contain the match circuit of band stop filter structure by near the two-way the optimization distributing point, the capacitive effect of antenna low-frequency range can effectively be improved, and overall performance is better, and cost performance is higher, is fit to large-scale promotion application.
Description of drawings
Fig. 1 is structural representation of the present invention.
In above-mentioned accompanying drawing, the component names that Reference numeral is corresponding is as follows:
the 1-distributing point, 2-the second metallization via hole, 3-the first metallization via hole, 4-the first biasing circuit, 5-the second biasing circuit, 6-the 3rd biasing circuit, 7-the first stamp-mounting-paper diode, 8-the 3rd stamp-mounting-paper diode, 9-the second stamp-mounting-paper diode, 10-the 4th stamp-mounting-paper diode, 11-the 5th stamp-mounting-paper diode, 12-the first chip inductor, 13-the 3rd chip inductor, 14-the 5th chip inductor, 15-the second chip inductor, 16-the second patch capacitor, 17-the 3rd patch capacitor, 18-the 4th chip inductor, 19-the first patch capacitor, 20-the 6th chip inductor, 21-the 7th chip inductor, 22-the first bonding jumper, 23-the second bonding jumper, 24-the 3rd bonding jumper, 25-the 4th bonding jumper, 26-the 5th bonding jumper, 27-the 6th bonding jumper, 28-the 7th bonding jumper, 29-the 8th bonding jumper, 30-the 9th bonding jumper, 31-the tenth bonding jumper, 32-the 11 bonding jumper, 33-the 12 bonding jumper, 34-the 13 bonding jumper, 35-the 14 bonding jumper, 36-the first folding line, 37-the second folding line.
Embodiment
The invention will be further described below in conjunction with drawings and Examples, and embodiments of the present invention include but not limited to the following example.
Embodiment
design small size in order to solve being difficult to of existing in prior art in given environment, can realize the smart mobile phone antenna of multiple frequency broad band work, can not meet the problem of technical development demand, as shown in Figure 1, the invention discloses a kind of eight frequency range restructural smart mobile phone antennas, comprise shell, as the machine glass shell, be arranged in shell, one surface is metal ground, another surface is for by an above bonding jumper and be connected in stamp-mounting-paper diode between bonding jumper, the dielectric-slab of the first bending bonding jumper group that chip inductor and patch capacitor form and the second bending bonding jumper group.
as shown in Figure 1, the first bending bonding jumper group mainly comprises the first bonding jumper 22, the second bonding jumper 23, the 3rd bonding jumper 24, the 4th bonding jumper 25, the 5th bonding jumper 26, the 6th bonding jumper 27, the 7th bonding jumper 28 and the 8th bonding jumper 29, also comprise the first stamp-mounting-paper diode 7, the second stamp-mounting-paper diode 9, the 3rd stamp-mounting-paper diode 8, the 4th stamp-mounting-paper diode 10, the 5th stamp-mounting-paper diode 11, the first chip inductor 12, the second chip inductor 15, the 3rd chip inductor 13, the 4th chip inductor 18, the 5th chip inductor 14, the 6th chip inductor 20, the 7th chip inductor 21, the first patch capacitor 19, the second patch capacitor 16, the 3rd patch capacitor 17 and metallization via hole 3.
Wherein, the left upper end edge of the first bonding jumper 22 is connected with the lower limb of the first chip inductor 12, right hand edge is connected with the left hand edge of the first stamp-mounting-paper diode 7; The left hand edge of the second bonding jumper 23 is connected with the right hand edge of the first stamp-mounting-paper diode 7, lower limb is connected with the top edge of the first patch capacitor 19, the upper right side edge is connected with the lower limb of the second stamp-mounting-paper diode 9; The lower-left end margin of the 3rd bonding jumper 24 is connected with the top edge of the first chip inductor 12, top edge respectively with the second chip inductor 15 be connected the lower limb of patch capacitor 16 and be connected; The 4th bonding jumper 25 is " inverted U-shaped " structure as shown in Figure 1, its left hand edge is connected with the right hand edge of the 3rd chip inductor 13, lower limb respectively with the second chip inductor 15 be connected that the top edge of patch capacitor 16 is connected, right hand edge is connected with the left hand edge of the 3rd stamp-mounting-paper diode 8; The top edge of the 5th bonding jumper 26 is connected with the lower limb of the 4th stamp-mounting-paper diode 10, lower limb is connected with the 4th chip inductor 18 with the 3rd patch capacitor 17 respectively; The lower-left end margin of the 6th bonding jumper 27 is connected with the right hand edge of the 3rd stamp-mounting-paper diode 8, lower limb is connected with the top edge of the 4th stamp-mounting-paper diode 10, top edge is connected with the 9th bonding jumper 30; The top edge of the 7th bonding jumper 28 is connected with the lower limb of the 3rd patch capacitor 17, right hand edge is connected with the left hand edge of the 5th chip inductor 14; The top edge of the 8th bonding jumper 29 is connected with the lower limb of the 4th chip inductor 18, left hand edge is connected with the right hand edge of the 5th chip inductor 14, lower limb is connected with the top edge of the second stamp-mounting-paper diode 9; The left hand edge of the 3rd chip inductor 13 is connected with the first metallization via hole 3; The first patch capacitor 19 lower limbs are connected with distributing point 1.Above-mentioned the first bending bonding jumper group has formed the match circuit of antenna jointly.
The second bending bonding jumper group comprises the 9th bonding jumper 30, the tenth bonding jumper 31, the 11 bonding jumper 32, the 12 bonding jumper 33, the 13 bonding jumper 34 and the 14 bonding jumper 35, above-mentioned bonding jumper and the 5th stamp-mounting-paper diode 11, the 6th chip inductor 20 and the 7th chip inductor 21 have formed the main structure of antenna jointly, they are in same level, and the dielectric-slab below of the antenna main structure that faces does not have metal ground.
Wherein, the 9th bonding jumper 30 is loaded with the 6th chip inductor 20, and its lower limb near the 6th chip inductor 20 is connected with the top edge of the 6th bonding jumper 27; The tenth bonding jumper 31 is " anti-L shaped " structure shown in Figure 1, and its lower limb and the second metallization via hole 2 are connected, top edge is connected with the lower limb of the 11 bonding jumper 32 of " U-shaped " shown in Figure 1; The top edge of the 11 bonding jumper 32 is connected with the lower limb of the 7th chip inductor 21 and its " U-shaped " structure mid portion is loaded with the 5th stamp-mounting-paper diode 11; The 12 bonding jumper 33, the 13 bonding jumper 34 and the 14 bonding jumper 35 are mutually perpendicular structure, wherein, the 12 bonding jumper 33 is for being printed on the horizontal component of circuit board top, the 13 bonding jumper 34 and the 14 bonding jumper 35 are mutually perpendicular stereochemical structure, and namely the first folding line 36 is three-dimensional vertical with the second folding line 37 places.In above-mentioned, there is certain gap between the 9th bonding jumper 30 and the tenth bonding jumper 31 and the 11 bonding jumper 32.
Consider the convenience of control, be provided with a plurality of biasing circuits that make antenna be in different operating states in the present invention, comprise the first biasing circuit 4, the second biasing circuit 5 and the 3rd biasing circuit 6.Wherein, the upper extreme point of the first biasing circuit 4 is connected with the lower-left end margin of the 4th bonding jumper 25, lower extreme point is connected with the left hand edge of the first bonding jumper 22; The upper extreme point of the second biasing circuit 5 is connected with the bottom righthand side edge of the 6th bonding jumper 27, lower extreme point is connected with the right hand edge of the second bonding jumper 23; The lower extreme point of the 3rd biasing circuit 6 is connected with the lower limb of the tenth bonding jumper 31, upper extreme point is connected with the right hand edge of the 11 bonding jumper 32.
in above-mentioned, the first bending bonding jumper group, the second bending bonding jumper group, the first biasing circuit 4, the second biasing circuit 5, the 3rd biasing circuit 6, the first stamp-mounting-paper diode 7, the second stamp-mounting-paper diode 9, the 3rd stamp-mounting-paper diode 8, the 4th stamp-mounting-paper diode 10, the 5th stamp-mounting-paper diode 11, the first chip inductor 12, the second chip inductor 15, the 3rd chip inductor 13, the 4th chip inductor 18, the 5th chip inductor 14, the 6th chip inductor 20, the 7th chip inductor 21, the first patch capacitor 19, the second patch capacitor 16 and the 3rd patch capacitor 17 all are positioned at the upper surface of dielectric-slab, and be on same level, metal ground is positioned at the lower surface of dielectric-slab, both the horizontal plane at place is parallel to each other.
, by above-mentioned design, make that overall structure of the present invention is comparatively compact, size is less, can cover 704-960MHz and 1710-2690MHz totally eight frequency ranges commonly used, and be fit to and circuit carries out integrated design.In use, by controlling the break-make of biasing circuit, antenna is worked under two states.wherein, when the first biasing circuit 4 and the second biasing circuit 5 are worked simultaneously, the first stamp-mounting-paper diode 7, the 3rd stamp-mounting-paper diode 8 and the 5th stamp-mounting-paper diode 11 are in conducting state, other stamp-mounting-paper diode is in off-state, antenna works in " state 1 ", at this moment, antenna can cover GSM850 900, DCS1800, PCS1900, UMTS2100 and LTE2300 2,500 seven frequency ranges, under this kind state, the distributed current that has been encouraged by antenna feed point is by feeder line with by the first bonding jumper 22, the second bonding jumper 23, the 3rd bonding jumper 24, the 4th bonding jumper 25, the first stamp-mounting-paper diode 7, the 3rd stamp-mounting-paper diode 8, the first chip inductor 12, the second chip inductor 15 and the 3rd common the first match circuit that forms of chip inductor 13, and through the 6th bonding jumper 27, flow to the 9th bonding jumper 30, basic theories according to microwave technology, when the length of bonding jumper equals can realize effective resonance four of corresponding wavelength/a period of time, thereby by the inductance value of regulating the 6th chip inductor 20 can make bonding jumper be operated in LTE2300 in 2500 MHz frequency ranges.
in the present invention, the 9th bonding jumper 30, exist capacitive coupling between the tenth bonding jumper 31 and the 11 bonding jumper 32, when the same day, line was operated in low frequency, the 9th bonding jumper 30 arrives current coupling by the tenth bonding jumper 31, the 11 bonding jumper 32, the 5th stamp-mounting-paper diode 11, the 7th chip inductor 21, the 12 bonding jumper 33, in the 13 bonding jumper 34 and the 14 common antenna short circuit branch that forms of bonding jumper 35, similar with the high-frequency work principle, when the entire length of bonding jumper during near quarter-wave, antenna is resonance well, because the low frequency wavelength of correspondence is longer, can't complete in the space of compactness antenna cabling layout, basic theories according to microwave technology, will present the distributed capacitance effect in the length of metal tape line during less than the corresponding quarter-wave of resonance frequency, thereby destroy the original impedance matching of antenna, thereby add chip inductor can offset this part distributed capacitance in the middle of bonding jumper, improve the impedance matching of this antenna, to realize broadband character, simultaneously also can finely tune the position of the resonance frequency of low frequency.In addition,, because the capacitive of low-frequency range is larger, be unfavorable for the impedance matching of antenna, can change the capacitive effect of antenna low-frequency range by the mode that loads match circuit at antenna port.By adopt above two kinds of technology antennas just can work in GSM850 900, DCS1800, PCS1900, UMTS2100 frequency range.So, when the first biasing circuit 4 and the 3rd biasing circuit 6 are worked simultaneously antenna just can work in GSM850 900, DCS1800, PCS1900, UMTS2100 and LTE2300 seven frequency ranges of 2500 MHz.similarly, when the first biasing circuit 4 and the 3rd biasing circuit 6 disconnections, and in the time of the second biasing circuit 5 work, antenna works in " state 2 ", because the 3rd biasing circuit 6 disconnects, cause the low-frequency resonant point of antenna to be displaced near LTE700, and by loading by the second bonding jumper 23, the 5th bonding jumper 26, the 7th bonding jumper 28, the 8th bonding jumper 29, the second stamp-mounting-paper diode 9, the 4th stamp-mounting-paper diode 10, the 5th chip inductor 14, the 3rd patch capacitor 17, the second match circuit that the 4th chip inductor 18 forms, make the operating frequency of antenna can cover LTE700, DCS1800, PCS1900, UMTS2100 and LTE2300 six frequency ranges of 2500 MHz.Finally, by the method that adopts the two states switching just can make antenna work in LTE700, GSM850 900, DCS1800, PCS1900, UMTS2100, LTE2300 eight frequency ranges of 2500 MHz.
In the present invention, can detect antenna by the mobile phone signal testing circuit and be in high band or low-frequency range, be controlled the break-make of biasing circuit by the MCU control circuit.Work in low frequency or high frequency is usually determined by the network formats of operator in certain areas due to mobile phone, therefore, network being detected when the signal deteching circuit of mobile phone is any frequency range, will be that control chip is exported a signal of controlling the biasing circuit break-make by MCU, wherein low-frequency range refers to 704 ~ 960 MHz, and high band refers to 2170 ~ 2690MHz.
In the present invention, the number of match circuit, biasing circuit, distributing point, patch capacitor, chip inductor, stamp-mounting-paper diode and setting position all can be adjusted according to the real work situation of antenna and user's actual demand, as long as can realize above-mentioned effect just can, just at this, more do not speak more bright.
, according to above-described embodiment, just can realize well the present invention.

Claims (10)

1. eight frequency range restructural smart mobile phone antennas, comprise shell, be arranged at the dielectric-slab in shell, be arranged at the metal ground on dielectric-slab one surface, all be arranged at the second bending bonding jumper group on another surface of dielectric-slab and be connected with first of distributing point (1) and bend the bonding jumper group, described the first bending bonding jumper group and the second bending bonding jumper group are by an above bonding jumper, be connected in the stamp-mounting-paper diode between bonding jumper, chip inductor and patch capacitor form, it is characterized in that, described the first bending bonding jumper group comprises that upper left side passes through the first chip inductor (12) and be connected with the 3rd bonding jumper (24), right-hand member is connected with first bonding jumper (22) of the second bonding jumper (23) by the first stamp-mounting-paper diode (7), the lower-left end of described the 3rd bonding jumper (24) is connected with the first chip inductor (12), upper end is connected with the 4th bonding jumper (25) by the second chip inductor (15) and the second patch capacitor (16) respectively, the lower end of described the 4th bonding jumper (25) is connected with the second patch capacitor (16) with the second chip inductor (15), right-hand member is connected with the 6th bonding jumper (27) by the 3rd stamp-mounting-paper diode (8), the lower-left end of described the 6th bonding jumper (27) is connected with the 3rd stamp-mounting-paper diode (8), lower end is connected with the 5th bonding jumper (26) by the 4th stamp-mounting-paper diode (10), the upper right side of described the 5th bonding jumper (26) is connected with the 4th stamp-mounting-paper diode (10), the lower-left end is connected with the 7th bonding jumper (28) by the 3rd patch capacitor (17), bottom righthand side is connected with the 8th bonding jumper (29) by the 4th chip inductor (18), described the 7th bonding jumper (28) is connected by the 5th chip inductor (14) with the 8th bonding jumper (29), described the 8th bonding jumper (29) is connected with the second bonding jumper (23) by the second stamp-mounting-paper diode (9), described distributing point (1) is connected in the second bonding jumper (23) lower end by the first patch capacitor (19), described the second bending bonding jumper group is connected with the upper end of the 6th bonding jumper (27).
2. eight frequency range restructural smart mobile phone antennas according to claim 1, it is characterized in that, described the 4th bonding jumper (25) is by the first longitudinal metal sheet, the the first transverse metal sheet that is vertically connected at the first longitudinal metal sheet bottom righthand side forms with the second transverse metal sheet that is vertically connected at the first longitudinal metal sheet upper right side, described the second chip inductor (15) and the second patch capacitor (16) all are connected in the first transverse metal sheet lower end, described the 3rd stamp-mounting-paper diode (8) is connected in the other end of the second transverse metal sheet corresponding to an end connected with the first longitudinal metal sheet.
3. eight frequency range restructural smart mobile phone antennas according to claim 2, is characterized in that, the lower-left end of the longitudinal metal sheet of described formation the 4th bonding jumper (25) is connected with the first metallization via hole (3) by the 3rd chip inductor (13).
4. eight frequency range restructural smart mobile phone antennas according to claim 3, it is characterized in that, described the second bending bonding jumper group comprises the 9th bonding jumper (30) of " annular " that be connected in the 6th bonding jumper (27) upper end, be positioned at the 9th bonding jumper (30) outside by the 3rd transverse metal sheet and be connected in the tenth bonding jumper (31) of " anti-L shaped " that the second longitudinal metal sheet on the 3rd transverse metal sheet right side forms, be connected in the 12 bonding jumper (33) of the tenth bonding jumper (31) upper end by the 7th chip inductor (21) and the 11 bonding jumper (32), described the 12 bonding jumper (33) lower end is connected with the 7th chip inductor (21), upper end is connected with the 13 bonding jumper (34), the left upper end of described the 13 bonding jumper (34) is connected with the 14 bonding jumper (35).
5. eight frequency range restructural smart mobile phone antennas according to claim 4, is characterized in that, described the 12 bonding jumper (33), the 13 bonding jumper (34) and the 14 bonding jumper (35) are the integral type structure, and the plane, place is mutually vertical.
6. eight frequency range restructural smart mobile phone antennas according to claim 5, is characterized in that, is loaded with the 6th chip inductor (20) in described the 9th bonding jumper (30).
7. eight frequency range restructural smart mobile phone antennas according to claim 6, is characterized in that, the lower-left end of described the tenth bonding jumper (31) is connected with the second metallization via hole (2).
8. eight frequency range restructural smart mobile phone antennas according to claim 7, is characterized in that, described the first bonding jumper (22) and the 4th bonding jumper (25) are communicated with by the first biasing circuit (4); The transverse metal sheet of described the tenth bonding jumper (31) is communicated with by the 3rd biasing circuit (6) with the 11 bonding jumper (32); Described the second bonding jumper (23) is communicated with by the second biasing circuit (5) with the 6th bonding jumper (27).
9. eight frequency range restructural smart mobile phone antennas according to claim 8, it is characterized in that, described the 11 bonding jumper (32) for by the 3rd longitudinal metal sheet, be connected in the 4th transverse metal sheet of the 3rd longitudinal metal sheet bottom righthand side and be connected in " inverted U-shaped " structure that the 5th transverse metal sheet of the 3rd longitudinal metal sheet upper right side forms, the upper end of described the tenth bonding jumper (31) is connected in the right-hand member of the 4th transverse metal sheet, and described the 7th chip inductor (21) is connected in the upper right side of the 5th transverse metal sheet.
10. eight frequency range restructural smart mobile phone antennas according to claim 9, is characterized in that, is connected with the 5th stamp-mounting-paper diode (11) between described the 5th transverse metal sheet and the 4th transverse metal sheet.
CN201310343308.1A 2013-08-08 2013-08-08 Eight-frequency band reconfigurable intelligent mobile phone antenna Expired - Fee Related CN103401067B (en)

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