CN103390443A - Lead-free electrode silver paste for semiconductive ceramic capacitors and preparation method of lead-free electrode silver paste - Google Patents
Lead-free electrode silver paste for semiconductive ceramic capacitors and preparation method of lead-free electrode silver paste Download PDFInfo
- Publication number
- CN103390443A CN103390443A CN2013102567341A CN201310256734A CN103390443A CN 103390443 A CN103390443 A CN 103390443A CN 2013102567341 A CN2013102567341 A CN 2013102567341A CN 201310256734 A CN201310256734 A CN 201310256734A CN 103390443 A CN103390443 A CN 103390443A
- Authority
- CN
- China
- Prior art keywords
- silver powder
- resin
- organic solvent
- silver
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Conductive Materials (AREA)
Abstract
Disclosed is lead-free electrode silver paste for semiconductive ceramic capacitors and a preparation method of the lead-free electrode silver paste. The lead-free electrode silver paste comprises 50-65wt% of silver powder, 24-44wt% of an organic solvent, 3-9wt% of resin and 2.5-4.5wt% of an inorganic additive, the organic solvent and the resin are placed into a constant-temperature reaction kettle, under certain conditions, after the resin is dissolved completely, carriers are prepared through stirring and removal of impurities through a screen, then the carriers are mixed with the silver powder, the organic solvent and the inorganic additive and stirred, the mixture is prepared and rolled, and then sieving is performed to obtain the required silver paste. The prepared silver paste has the advantages of being good in printing performance, free from piece bonding phenomena, environmentally friendly, high in capacitance and good in loss performance.
Description
Technical field
The present invention relates to semiconductive ceramic capacitance electrode raw material technical field, particularly a kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity and preparation method thereof.
Background technology
Although traditional ceramic capacitor excellent performance, little, the bulky problem of the capacity that exists, so limited the application of this element.In order to solve the shortcoming of traditional ceramics capacitor, people have developed semiconductor ceramic capacitor.So-called semiconductor ceramic capacitor is exactly on the surface of crystal grain in the surface of semiconductor porcelain body or porcelain body, make its form one deck as thin as a wafer insulating barrier and make capacitor, semiconductor ceramic capacitor newly developed is compared with conventional ceramic capacitor in the past, have the characteristics such as capacity is large, volume is little, be applicable in the circuit such as filtering, bypass, coupling.
In the production of electronic component, silver paste is a kind of widely used precious metal material, and the conductive electrode of semiconductive ceramic electric capacity needs this material equally.In order to enhance productivity, the silver paste that uses is generally to adopt silk screen printing, and then oven dry, carry out sintering, and the stitch wire of burn-oning at the electrode two ends after sintering is complete, then use encapsulating material to seal encapsulation and get final product.In the process of printing slurry and sintering, the phenomenon that ceramics is bonded together often occurs, the solution that has not had.In the formula of silver paste, need to add glass powder with low melting point, the leaded glass powder with low melting point of the general employing of previous glass dust, environmental requirement along with countries such as European Union, leaded glass powder with low melting point has been not suitable for using, and needs a kind of better silver paste preparation method to meet the demand of producing.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity and preparation method thereof, the silver paste printing performance of preparation is good, can not produce the bonding die phenomenon, has environmental protection, capacitance is high and drain performance is good characteristics.
In order to achieve the above object, the technical scheme taked of the present invention is:
A kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity, its raw material form mass percent and are: silver powder 50-65wt%, organic solvent 24-44wt%, resin 3-9wt%, inorganic additive 2.5-4.5wt%.
Described silver powder is the spherical silver powder of different-grain diameter and the mixture of flake silver powder, and the mixing quality ratio is 0:100-100:0, and flake silver powder center granularity is 5-10um, the spherical silver Powder Particle Size is respectively A:0.3-0.6um, B:0.7-0.9um, A and B mixing quality ratio are 0:100-100:0; Organic solvent is that diethylene glycol butyl ether, terpinol, ethylene glycol ethyl ether, butyl glycol ether are wherein at least a; Resin is at least a mixture with modified rosin resin of the ethyl cellulose of different molecular weight, and the modified rosin resin mass ratio is 0-5%; Inorganic additive is that metal nickel powder, glass powder with low melting point, bismuth oxide are wherein at least a.
A kind of preparation method of the unleaded electrode silver plasm material for semiconductive ceramic electric capacity, its step is as follows:
Step 1: 10-30wt% organic solvent, 3-9wt% resin are put into the isothermal reaction still, under 80-90 ℃, stir 2-3 hour, mixing speed 100-300 rev/min, stirred again after resin dissolves fully 1 hour, and then crossed 250 eye mesh screens and remove impurity, make carrier;
Step 2: the carrier that above-mentioned steps 1 is made mixes with 50-65wt% silver powder, 0-34wt% organic solvent, 2.5-4.5wt% inorganic additive and puts into the double-planet mixer, stirs 4-5 hour, and mixing speed 10-100 rev/min, make mixture;
Step 3: above-mentioned steps 2 gained mixtures are put on three-roll grinder and are rolled, make the mixture fineness less than 10um, then, by 250 mesh sieves, obtain required silver paste.
The semiconductive ceramic electric capacity that the present invention adopts is with unleaded electrode silver plasm material and preparation method thereof, environmental protection, do not contain harmful leaded material, excellent silk screen printing performance is arranged, suitable and adjustable thixotropy performance is arranged simultaneously, the phenomenon that ceramics is bonded together can not occur in the process of printing slurry and sintering, can solve preferably the defects such as the burr, the edge that occur in printing process be irregular, have the advantages that capacitance is high, drain performance is good.
Embodiment
Below in conjunction with embodiment, the present invention is described in further details.
Embodiment one:
A kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity, its raw material forms mass percent: silver powder 50wt%, wherein spherical silver powder and flake silver powder mass ratio are 100:0, flake silver powder center granularity is 5-10um, the spherical silver Powder Particle Size is respectively A:0.3-0.6um, B:0.7-0.9um, A:B mass ratio are 90:10; Organic solvent 40wt%, terpinol 1.6wt% wherein, diethylene glycol butyl ether 5wt%, ethylene glycol ethyl ether 33.4wt%; Resin 7wt%, ethyl cellulose 7wt% wherein, the modified rosin resin mass ratio is 0%; Inorganic additive 3wt%, glass powder with low melting point 0.4wt% wherein, bismuth oxide 0.3wt%, nickel powder 2.3wt%.
Manufacture method of the present invention comprises the following steps:
Step 1: 24wt% organic solvent, 7wt% resin are put into the isothermal reaction still, under 80 ℃, stirred 3 hours, 200 rev/mins of mixing speeds, stirred 1 hour again after resin dissolves fully, then crosses 250 eye mesh screens and remove impurity, makes carrier;
Step 2: the carrier that accounts for gross mass 31% that above-mentioned steps 1 is made mixes with 50wt% silver powder, 16wt% organic solvent, 3wt% inorganic additive and puts into the double-planet mixer, stirs 4 hours, and 80 rev/mins of mixing speeds, make mixture;
Step 3: above-mentioned steps 2 gained mixtures are put on three-roll grinder and are rolled, make the mixture fineness less than 10um, then, by 250 mesh sieves, obtain required silver paste;
Embodiment two:
A kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity, its raw material forms mass percent: silver powder 55wt%, wherein spherical silver powder and flake silver powder mass ratio are 0:100, flake silver powder center granularity is 5-10um, the spherical silver Powder Particle Size is respectively A:0.3-0.6um, B:0.7-0.9um, A:B mass ratio are 1:1; Organic solvent 36wt%, terpinol 1wt% wherein, diethylene glycol butyl ether 5wt%, ethylene glycol ethyl ether 30wt%; Resin 4.5wt%, ethyl cellulose 2.5wt% wherein, the modified rosin resin mass ratio is 2%; Inorganic additive 4.5wt%, glass powder with low melting point 0.6wt% wherein, bismuth oxide 0.4wt%, nickel powder 3.5wt%.
Manufacture method of the present invention comprises the following steps:
Step 1: 30wt% organic solvent, 4.5wt% resin are put into the isothermal reaction still, under 90 ℃, stirred 2.5 hours, 100 rev/mins of mixing speeds, stirred 1 hour again after resin dissolves fully, then crosses 250 eye mesh screens and remove impurity, makes carrier;
Step 2: the carrier that above-mentioned steps 1 is made mixes with 55wt% silver powder, 6wt% organic solvent, 4.5wt% inorganic additive and puts into the double-planet mixer, stirs 4.5 hours, and 10 rev/mins of mixing speeds, make mixture;
Step 3: above-mentioned steps 2 gained mixtures are put on three-roll grinder and are rolled, make the mixture fineness less than 10um, then, by 250 mesh sieves, obtain required silver paste;
Embodiment three:
A kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity, its raw material forms mass percent: silver powder 60wt%, wherein spherical silver powder and flake silver powder mass ratio are 1:1, flake silver powder center granularity is 5-10um, the spherical silver Powder Particle Size is respectively A:0.3-0.6um, B:0.7-0.9um, A:B mass ratio are 100:0; Organic solvent 30.3wt%, terpinol 1.6wt% wherein, diethylene glycol butyl ether 4.3wt%, ethylene glycol ethyl ether 24.4wt%; Resin 6.5wt%, ethyl cellulose 5.9wt% wherein, the modified rosin resin mass ratio is 0.6%; Inorganic additive 3.2wt%, glass powder with low melting point 0.45wt% wherein, bismuth oxide 0.35wt%, nickel powder 2.4wt%.
Manufacture method of the present invention comprises the following steps:
Step 1: 10wt% organic solvent, 6.5wt% resin are put into the isothermal reaction still, under 85 ℃, stirred 2 hours, 300 rev/mins of mixing speeds, stirred 1 hour again after resin dissolves fully, then crosses 250 eye mesh screens and remove impurity, makes carrier;
Step 2: the carrier that above-mentioned steps 1 is made mixes with 60wt% silver powder, 20.3wt% organic solvent, 3.2wt% inorganic additive and puts into the double-planet mixer, stirs 5 hours, and 20 rev/mins of mixing speeds, make mixture;
Step 3: above-mentioned steps 2 gained mixtures are put on three-roll grinder and are rolled, make the mixture fineness less than 10um, then, by 250 mesh sieves, obtain required silver paste.
Claims (9)
1. a unleaded electrode silver plasm material that is used for semiconductive ceramic electric capacity, is characterized in that, its raw material forms mass percent and is: silver powder 50-65wt%, organic solvent 24-44wt%, resin 3-9wt%, inorganic additive 2.5-4.5wt%.
2. a kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity according to claim 1, it is characterized in that, described silver powder is the spherical silver powder of different-grain diameter and the mixture of flake silver powder, the mixing quality ratio is 0:100-100:0, flake silver powder center granularity is 5-10um, and the spherical silver Powder Particle Size is respectively A:0.3-0.6um, B:0.7-0.9um, A and B mixing quality ratio are 0:100-100:0; Organic solvent is that diethylene glycol butyl ether, terpinol, ethylene glycol ethyl ether, butyl glycol ether are wherein at least a; Resin is at least a mixture with modified rosin resin of the ethyl cellulose of different molecular weight, and the modified rosin resin mass ratio is 0-5%; Inorganic additive is that metal nickel powder, glass powder with low melting point, bismuth oxide are wherein at least a.
3. a kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity according to claim 1, it is characterized in that, its raw material forms mass percent: silver powder 50wt%, wherein spherical silver powder and flake silver powder mass ratio are 100:0, flake silver powder center granularity is 5-10um, the spherical silver Powder Particle Size is respectively A:0.3-0.6um, and B:0.7-0.9um, A:B mass ratio are 90:10; Organic solvent 40wt%, terpinol 1.6wt% wherein, diethylene glycol butyl ether 5wt%, ethylene glycol ethyl ether 33.4wt%; Resin 7wt%, ethyl cellulose 7wt% wherein, the modified rosin resin mass ratio is 0%; Inorganic additive 3wt%, glass powder with low melting point 0.4wt% wherein, bismuth oxide 0.3wt%, nickel powder 2.3wt%.
4. a kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity according to claim 1, it is characterized in that, its raw material forms mass percent: silver powder 55wt%, wherein spherical silver powder and flake silver powder mass ratio are 0:100, flake silver powder center granularity is 5-10um, the spherical silver Powder Particle Size is respectively A:0.3-0.6um, and B:0.7-0.9um, A:B mass ratio are 1:1; Organic solvent 36wt%, terpinol 1wt% wherein, diethylene glycol butyl ether 5wt%, ethylene glycol ethyl ether 30wt%; Resin 4.5wt%, ethyl cellulose 2.5wt% wherein, the modified rosin resin mass ratio is 2%; Inorganic additive 4.5wt%, glass powder with low melting point 0.6wt% wherein, bismuth oxide 0.4wt%, nickel powder 3.5wt%.
5. a kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity according to claim 1, it is characterized in that, its raw material forms mass percent: silver powder 60wt%, wherein spherical silver powder and flake silver powder mass ratio are 1:1, flake silver powder center granularity is 5-10um, the spherical silver Powder Particle Size is respectively A:0.3-0.6um, and B:0.7-0.9um, A:B mass ratio are 100:0; Organic solvent 30.3wt%, terpinol 1.6wt% wherein, diethylene glycol butyl ether 4.3wt%, ethylene glycol ethyl ether 24.4wt%; Resin 6.5wt%, ethyl cellulose 5.9wt% wherein, the modified rosin resin mass ratio is 0.6%; Inorganic additive 3.2wt%, glass powder with low melting point 0.45wt% wherein, bismuth oxide 0.35wt%, nickel powder 2.4wt%.
6. the preparation method of the unleaded electrode silver plasm material for semiconductive ceramic electric capacity according to claim 1, is characterized in that, step is as follows:
Step 1: 10-30wt% organic solvent, 3-9wt% resin are put into the isothermal reaction still, under 80-90 ℃, stir 2-3 hour, mixing speed 100-300 rev/min, stirred again after resin dissolves fully 1 hour, and then crossed 250 eye mesh screens and remove impurity, make carrier;
Step 2: the carrier that above-mentioned steps 1 is made mixes with 50-65wt% silver powder, 0-34wt% organic solvent, 2.5-4.5wt% inorganic additive and puts into the double-planet mixer, stirs 4-5 hour, and mixing speed 10-100 rev/min, make mixture;
Step 3: above-mentioned steps 2 gained mixtures are put on three-roll grinder and are rolled, make the mixture fineness less than 10um, then, by 250 mesh sieves, obtain required silver paste.
7. a kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity according to claim 6, is characterized in that, step is as follows:
Step 1: 24wt% organic solvent, 7wt% resin are put into the isothermal reaction still, under 80 ℃, stirred 3 hours, 200 rev/mins of mixing speeds, stirred 1 hour again after resin dissolves fully, then crosses 250 eye mesh screens and remove impurity, makes carrier;
Step 2: the carrier that accounts for gross mass 31% that above-mentioned steps 1 is made mixes with 50wt% silver powder, 16wt% organic solvent, 3wt% inorganic additive and puts into the double-planet mixer, stirs 4 hours, and 80 rev/mins of mixing speeds, make mixture;
Step 3: above-mentioned steps 2 gained mixtures are put on three-roll grinder and are rolled, make the mixture fineness less than 10um, then, by 250 mesh sieves, obtain required silver paste.
8. a kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity according to claim 6, is characterized in that, step is as follows:
Step 1: 30wt% organic solvent, 4.5wt% resin are put into the isothermal reaction still, under 90 ℃, stirred 2.5 hours, 100 rev/mins of mixing speeds, stirred 1 hour again after resin dissolves fully, then crosses 250 eye mesh screens and remove impurity, makes carrier;
Step 2: the carrier that accounts for gross mass 34.5% that above-mentioned steps 1 is made mixes with 55wt% silver powder, 6wt% organic solvent, 4.5wt% inorganic additive and puts into the double-planet mixer, stirs 4.5 hours, and 10 rev/mins of mixing speeds, make mixture;
Step 3: above-mentioned steps 2 gained mixtures are put on three-roll grinder and are rolled, make the mixture fineness less than 10um, then, by 250 mesh sieves, obtain required silver paste.
9. a kind of unleaded electrode silver plasm material for semiconductive ceramic electric capacity according to claim 6, is characterized in that, step is as follows:
Step 1: 10wt% organic solvent, 6.5wt% resin are put into the isothermal reaction still, under 85 ℃, stirred 2 hours, 300 rev/mins of mixing speeds, stirred 1 hour again after resin dissolves fully, then crosses 250 eye mesh screens and remove impurity, makes carrier;
Step 2: the carrier that accounts for gross mass 16.5% that above-mentioned steps 1 is made mixes with 60wt% silver powder, 20.3wt% organic solvent, 3.2wt% inorganic additive and puts into the double-planet mixer, stirs 5 hours, and 20 rev/mins of mixing speeds, make mixture;
Step 3: above-mentioned steps 2 gained mixtures are put on three-roll grinder and are rolled, make the mixture fineness less than 10um, then, by 250 mesh sieves, obtain required silver paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102567341A CN103390443A (en) | 2013-06-25 | 2013-06-25 | Lead-free electrode silver paste for semiconductive ceramic capacitors and preparation method of lead-free electrode silver paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102567341A CN103390443A (en) | 2013-06-25 | 2013-06-25 | Lead-free electrode silver paste for semiconductive ceramic capacitors and preparation method of lead-free electrode silver paste |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103390443A true CN103390443A (en) | 2013-11-13 |
Family
ID=49534681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013102567341A Pending CN103390443A (en) | 2013-06-25 | 2013-06-25 | Lead-free electrode silver paste for semiconductive ceramic capacitors and preparation method of lead-free electrode silver paste |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103390443A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996434A (en) * | 2014-04-24 | 2014-08-20 | 安徽为民磁力科技有限公司 | Low-silver printed circuit board silver paste and preparation method thereof |
| CN104637571A (en) * | 2015-02-05 | 2015-05-20 | 合肥圣达电子科技实业公司 | Silver paste for ceramic capacitor and preparation method thereof |
| CN104658634A (en) * | 2015-02-03 | 2015-05-27 | 四川银河星源科技有限公司 | Crystalline silicon solar battery back electrode silver paste and preparation method thereof |
| CN106205777A (en) * | 2016-08-16 | 2016-12-07 | 中国振华集团云科电子有限公司 | Anti-stick formula of piezo silver slurry burnt in a heap and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3407081A (en) * | 1965-04-26 | 1968-10-22 | Du Pont | Noble metal paste compositions comprising novel liquid carriers |
| JPH06168621A (en) * | 1992-11-27 | 1994-06-14 | Hokuriku Electric Ind Co Ltd | Conductive paste and electronic parts formed with electrode made of this conductive paste |
| CN101692410A (en) * | 2009-08-21 | 2010-04-07 | 广东风华高新科技股份有限公司 | Silver paste of MLCC terminal electrode |
| CN101986390A (en) * | 2010-11-23 | 2011-03-16 | 肇庆市羚光电子化学品材料科技有限公司 | Silver paste for disk capacitor electrode |
| CN102157221A (en) * | 2011-03-28 | 2011-08-17 | 彩虹集团公司 | Method for preparing electrode silver paste for environment-friendly semiconductor capacitor |
| CN102568704A (en) * | 2012-03-16 | 2012-07-11 | 肇庆市羚光电子化学品材料科技有限公司 | Environment-friendly lead-free semiconductor ceramic capacitive electrode silver paste and preparation method thereof |
| CN102768872A (en) * | 2012-06-29 | 2012-11-07 | 彩虹集团电子股份有限公司 | Lead-free environment friendly silver paste for piezoresistor and preparation method thereof |
-
2013
- 2013-06-25 CN CN2013102567341A patent/CN103390443A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3407081A (en) * | 1965-04-26 | 1968-10-22 | Du Pont | Noble metal paste compositions comprising novel liquid carriers |
| JPH06168621A (en) * | 1992-11-27 | 1994-06-14 | Hokuriku Electric Ind Co Ltd | Conductive paste and electronic parts formed with electrode made of this conductive paste |
| CN101692410A (en) * | 2009-08-21 | 2010-04-07 | 广东风华高新科技股份有限公司 | Silver paste of MLCC terminal electrode |
| CN101986390A (en) * | 2010-11-23 | 2011-03-16 | 肇庆市羚光电子化学品材料科技有限公司 | Silver paste for disk capacitor electrode |
| CN102157221A (en) * | 2011-03-28 | 2011-08-17 | 彩虹集团公司 | Method for preparing electrode silver paste for environment-friendly semiconductor capacitor |
| CN102568704A (en) * | 2012-03-16 | 2012-07-11 | 肇庆市羚光电子化学品材料科技有限公司 | Environment-friendly lead-free semiconductor ceramic capacitive electrode silver paste and preparation method thereof |
| CN102768872A (en) * | 2012-06-29 | 2012-11-07 | 彩虹集团电子股份有限公司 | Lead-free environment friendly silver paste for piezoresistor and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996434A (en) * | 2014-04-24 | 2014-08-20 | 安徽为民磁力科技有限公司 | Low-silver printed circuit board silver paste and preparation method thereof |
| CN104658634A (en) * | 2015-02-03 | 2015-05-27 | 四川银河星源科技有限公司 | Crystalline silicon solar battery back electrode silver paste and preparation method thereof |
| CN104637571A (en) * | 2015-02-05 | 2015-05-20 | 合肥圣达电子科技实业公司 | Silver paste for ceramic capacitor and preparation method thereof |
| CN106205777A (en) * | 2016-08-16 | 2016-12-07 | 中国振华集团云科电子有限公司 | Anti-stick formula of piezo silver slurry burnt in a heap and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101136261B (en) | Copper electrode slurry material and manufacturing method thereof | |
| CN101290817B (en) | High temperature durable, oxidation resistant and lead nickel free conductor pulp and preparing method thereof | |
| CN102354545B (en) | Sliver electrode slurry for back electric field of silicon solar cell and preparation method thereof | |
| CN103165217B (en) | A kind of electric conduction silver paste for mica plate capacitor and preparation method thereof | |
| CN105788699A (en) | High-temperature and high-humidity resistant electrode silver paste for ZnO piezoresistor and preparation method for electrode silver paste | |
| CN102222536B (en) | Environment-friendly silver conductive paste for surface mounting of semiconductor chips and preparation method of environment-friendly silver conductive paste | |
| CN103390443A (en) | Lead-free electrode silver paste for semiconductive ceramic capacitors and preparation method of lead-free electrode silver paste | |
| CN102875137A (en) | Tape casting slurry for laminated sheet type electronic component and preparation method for tape casting slurry | |
| CN104575663A (en) | Electrode slurry and preparation method thereof | |
| CN102360584B (en) | Carbon black additive-contained conductive slurry utilized by photovoltaic cell and preparation method thereof | |
| CN105244073B (en) | A kind of core-through capacitor silver paste and preparation method thereof | |
| CN105185469A (en) | Preparation method of high-stability conductive silver paste used for touch screen | |
| CN103332865A (en) | Lead-free superfine glass powder and synthetic method thereof | |
| CN104112490A (en) | Electrode slurry and preparation method | |
| CN105761778A (en) | Preparation method of low-temperature cured-type conductive silver paste | |
| CN102855959B (en) | Surface-layer silver paste for SrTiO3 piezoresistor and preparation method of surface-layer silver paste | |
| CN102855960A (en) | Ohmic silver paste for SrTiO3 piezoresistor and preparation method of ohmic silver paste | |
| CN105761779A (en) | Low-temperature cured conductive silver paste used for solar cell | |
| CN102522140A (en) | Aluminum paste for silicon-based solar cell and preparation method for aluminum paste | |
| CN109994250B (en) | Low-melting-point SnBi alloy-copper composite electronic paste and preparation and printing methods thereof | |
| CN108706970A (en) | A kind of preparation method of modified oxidized zinc-type pressure-sensitive ceramic material | |
| CN113257455B (en) | Low-temperature-sintered lead-free conductive silver paste | |
| CN112908511A (en) | Silver conductor paste for battery back electrode | |
| CN102543259B (en) | Low-warpage aluminum paste for back field of solar battery and preparation method for aluminum paste | |
| CN112053796B (en) | Silver sulfide resistant electrode paste and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131113 |