CN103390421A - Control method and electronic apparatus employing same - Google Patents
Control method and electronic apparatus employing same Download PDFInfo
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- CN103390421A CN103390421A CN2012101415154A CN201210141515A CN103390421A CN 103390421 A CN103390421 A CN 103390421A CN 2012101415154 A CN2012101415154 A CN 2012101415154A CN 201210141515 A CN201210141515 A CN 201210141515A CN 103390421 A CN103390421 A CN 103390421A
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Abstract
The invention provides a control method and an electronic apparatus employing the same. The control method is suitable for use in the electronic apparatus. The electronic apparatus comprises a memory cell; the memory cell is provided with a memory array; and the memory array has specific information. The control method provided by the invention comprises outputting an enable signal when the electronic apparatus is operated in a power-on mode and an operation voltage is generated; reading the specific information according to the enable signal so as to generate a read result; determining whether the read result is equal to known information or not; and allowing the memory cell entering the operation mode when the read result is equal to the known information.
Description
Technical field
The invention relates to a kind of control method, particularly relevant for a kind of ready control method of operating voltage of guaranteeing storage unit.
Background technology
In present many electronic installations, usually has a storage unit, in order to storage data.After electronic installation entered power on mode, storage unit will be according to an operating voltage, the state of setting itself.Generally speaking, operating voltage over time, should arrive a default position accurate.
Yet, over time, accurate if operating voltage arrives default position yet, and the storage unit operating voltage that lack of foundation and while moving, may cause the setting mistake of itself.Moreover, when other element access memory cell of electronic installation, will produce wrong access results.
Summary of the invention
The invention provides a kind of control method, be applicable to an electronic installation, this electronic installation has a storage unit, and this storage unit has a storage array.Storage array has a customizing messages.When this electronic installation operates under a power on mode, and an operating voltage has been while having produced, output one enable signal., according to enable signal, read customizing messages, in order to produce a reading result.Judge whether reading result equals a Given information.When reading result equals Given information, just make this storage unit enter an operator scheme.
The present invention separately provides a kind of electronic installation, comprises a storage unit and a main unit.Storage unit receives an operating voltage, and comprises a storage array, a detecting module, an access module, a comparison module and a processing module.Storage array has a customizing messages and a set information.Detecting module, according to operating voltage, is exported an enable signal.Access module reads the stored customizing messages of storage array, in order to produce a reading result.Comparison module is reading result and a Given information relatively.Processing module, according to enable signal, enables access module, in order to produce reading result.When reading result equaled Given information, processing module access set information, in order to enter an operator scheme.When storage unit enters under operator scheme, the main unit access memory cell.
, according to technical scheme provided by the invention, can guarantee that the operating voltage of storage unit is ready.
Description of drawings
Fig. 1 is that one of control method of the present invention may embodiment.
Fig. 2 is another possibility embodiment of control method of the present invention.
Fig. 3 is the schematic diagram of electronic installation of the present invention.
Drawing reference numeral:
300～electronic installation;
310～storage unit;
320～main unit;
311～storage array;
312～detecting module;
313～access module;
314～comparison module;
315～processing module;
IN
SPE～customizing messages;
IN
SET～set information;
VCC～operating voltage;
V
P1, V
P2～voltage;
S
EN～enable signal;
S
KD～Given information;
S
P1, S
P2～detection signal;
S110-S150, S210-S280～step.
Embodiment
For the features and advantages of the present invention can be become apparent, cited below particularlyly go out preferred embodiment, and coordinate appended accompanying drawing, be described in detail below:
Itself the setting mistake that causes because operating voltage is not enough for fear of storage unit, the present invention after storage unit receives operating voltage, a customizing messages in reading cells, then the result after reading is compared with a Given information.If comparative result is identical, the position standard of expression operating voltage is enough to allow storage unit carry out normal access action, thereby makes storage unit enter an operator scheme.Under operator scheme, storage unit can be carried out the setting parameter of itself.
On the contrary, if comparative result is different, the position standard of expression operating voltage is not enough to allow storage unit carry out normal access action, therefore, and the stored customizing messages of reading cells again, and the result after reading is compared with Given information again.
Fig. 1 is that one of control method of the present invention may embodiment.Control method of the present invention is applicable to an electronic installation.Electronic installation has a storage unit.Storage unit has a storage array.Storage array stores a customizing messages.The present invention does not limit the kind of storage unit.All can be used as storage unit as long as have the element of memory function.In a possibility embodiment, storage unit is a flash body (Flash memory).
, when electronic installation operates under a power on mode, just can produce an operating voltage (step S110).In a possibility embodiment, operating voltage is relevant with the battery electric power of electronic installation.When battery electric power descended, the time that operating voltage reaches default position standard also can be elongated.In the present embodiment, storage unit can be according to operating voltage, the set information that acquisition itself is stored, and according to this set information, the state of setting itself.
, when operating voltage produces, export an enable signal (step S120).At this moment, it is accurate that operating voltage may not reach a default position.In a possibility embodiment, enable signal is produced by a voltage detector.Voltage detector receives operating voltage, and after a set time, output one enable signal.
Then,, according to enable signal, read the stored customizing messages of storage array, in order to produce a reading result (step S130).In a possibility embodiment, customizing messages is to deposit in storage array in advance.In addition, storage array also stores a set information, and it may comprise many setup parameters.Storage unit is according to these setup parameters, the state of setting itself.
Then, judge whether reading result equals a Given information (step S 140).When reading result equals Given information, the expression storage unit can be carried out correct access action, therefore, makes storage unit enter an operator scheme (step S150).Yet when reading result was not equal to Given information, the expression storage unit may can't be carried out correct access action because of the accurate deficiency in the position of operating voltage, therefore, re-executes step S130 and S150.
The present invention does not limit how to produce Given information.In a possibility embodiment, can utilize the characteristic of logic lock (logic gate), produce a Given information.For example, if the input end of a plurality of not gates (NOT gate) is couple to operating voltage or ground voltage (ground), just the output signal of these not gates can form a continuous logic value, as 1010, and this logical value can be used as a Given information.
Fig. 2 is another possibility embodiment of control method of the present invention.Fig. 2 similar diagram 1, difference be, Fig. 2 is many step S220, S230 and S240.In step S220, judge whether one first pin of storage unit receives high levels.
In a possibility embodiment, the voltage level of the first pin of storage unit and one first a default standard are compared, can learn just whether the first pin receives high levels.For example,, if the voltage level of the first pin is punctual greater than this first default position, represent that the first pin receives high levels.On the contrary,, if the voltage level of the first pin is punctual less than the first default position, represent that the first pin does not receive high levels.
If the first pin does not receive high levels, perform step S260 ~ S270, whether can carry out correct access action in order to judge storage unit.Due in the operating principle of step S260 ~ S270 and Fig. 1 step S130 ~ S140 is identical, therefore repeat no more.
If the first pin receives high levels, perform step S230, whether receive high levels in order to one second pin that judges storage unit.In a possibility embodiment, accurate by voltage level and the one second default position of comparing the second pin, can learn just whether the second pin receives high levels.The present invention does not limit the relation between first and second default position standard.For example, it is accurate that the first default position will definitely equal or be not equal to the second default position.
If the second pin does not receive high levels, perform step S280, enter an operator scheme in order to make storage unit.If the second pin receives high levels, perform step S240, enter a test pattern in order to make storage unit.In test pattern, can carry out any test to storage unit.In a possibility embodiment, after storage unit enters test pattern, just a customizing messages can be write storage array.After writing customizing messages, the second pin that just makes storage unit is low level, to prevent storage unit, again enters test pattern.
The present invention does not limit the execution time of step S220.In the present embodiment, step S220 is between step S250 and S260.In other embodiments, before or after step S220 can be positioned at arbitrary step.In other words,, no matter carry out which step,, as long as the first pin of storage unit is high levels, can stop immediately action originally, judge instead whether the second pin of storage unit receives high levels.For example, when execution step S260, if when the first pin is high levels suddenly, can leap to step S230, accurate because determining that operating voltage has reached default position., as long as the second pin also receives high levels, just can enter test pattern (step S240)., if the second pin does not receive high levels, enter operator scheme (step S280).
In the above-described embodiments, be accurate according to the position of the second pin, determine whether to enter test pattern.In other embodiments, can judge the number of pulses that the second pin is received.For example, during greater than a preset value, enter test pattern when the received number of pulses of the second pin.During not greater than a preset value, enter operator scheme when the received number of pulses of the second pin.
Fig. 3 is the schematic diagram of electronic installation of the present invention.As shown in the figure, electronic installation 300 comprises a storage unit 310 and a main unit 320.The present invention does not limit the kind of storage unit 310.In a possibility embodiment, storage unit 310 is a flash body.In the present embodiment, storage unit 310 receives an operating voltage V-CC, and comprises a storage array 311, a detecting module 312, an access module 313, a comparison module 314 and a processing module 315.
Storage array 311 has a customizing messages IN
SPEAn and set information IN
SET.For convenience of description, in the present embodiment, be take single storage array as example, but not in order to limit the present invention.In other embodiments, customizing messages IN
SPEAnd set information IN
SETMay be stored in respectively in different storage arrays.
Detecting module 312 detecting operating voltage VCC, and according to detecting result, output enable signal S
EN.One may embodiment in, when operating voltage VCC is produced, detecting module 312 after a set time, output enable signal S
EN.In the present embodiment, detecting module 312 is more detected the voltage level of first and second pin (not shown) of storage unit 310, and according to the detecting result, output detection signal S
P1And S
P2.
Processing module 315, according to the Output rusults of detecting module 312, is controlled access module 313.In a possibility embodiment, when receiving enable signal SEN, processing module 315 enables access module 313, uses so that access module 313 access storage arrays 311.Access module 313 reads the stored customizing messages IN of storage array 311
SPE, in order to produce a reading result.
Reading result and a Given information S that comparison module 314 produces access module 313
KDCompare, and comparative result is provided and gives processing module 315.In the present embodiment, processing module 315 is according to the comparative result of comparison module 314, and it is accurate that judgement learns whether operating voltage VCC has reached default position.
For example, the reading result that produces when access module 313 equals Given information S
KDThe time, the position standard of expression operating voltage VCC is enough to allow storage unit 310 carry out normal access action.Therefore, processing module 315 makes storage unit 310 enter an operator scheme.If the reading result that access module 313 produces is not equal to Given information S
KD, the position standard of expression operating voltage VCC is not enough to allow storage unit 310 carry out normal access action.Therefore, processing module 315 enables access module 313 again, in order to again to read customizing messages IN
SPE.The reading result that comparison module 314 is newer and Given information S
KD, and again provide comparative result to give processing module 315.
The present invention does not limit Given information S
KDProducing method.In a possibility embodiment, Given information S
KDProduced by a logic module (not shown).Logic module is consisted of a plurality of logic locks., by the characteristic of logic lock, just can produce Given information S
KD.For example, accurate by the input position of controlling a plurality of not gates (NOT gate), just can produce a continuous logical value, as 101010, and this logical value just can be used as Given information S
KD.In a possibility embodiment, Given information S
KDEqual customizing messages IN
SPE.
Under operator scheme, the set information S that storage unit 310 is stored up according to storage array 311
SET, the state of setting itself, after setting was completed, main unit 320 just can normally be used storage unit 310.For example, under operator scheme, processing module 315 reads the stored set information IN of storage array 311
SET, then according to set information IN
SET, the state of other element in setting storage unit 310.
When storage unit 310 enters under operator scheme, but just access memory cell 310 of main unit 320.In a possibility embodiment, after storage unit 310 has been completed inner setting, will send a ready signal.Main unit 320 is according to ready signal access memory cell 310.The present invention does not limit the inside structure of main unit 320.In a possibility embodiment, the inside structure of main unit 320 is the kinds that depend on electronic installation 300.For example, if electronic installation 300 is a mobile phone, main unit 320 is in order to carry out the correlation function of mobile phone.
Because aging or other factors occurs the element in electronic installation 300, may cause the position standard of operating voltage VCC can't arrive a default position standard in a Preset Time, and when the accurate deficiency in the position of operating voltage VCC, storage unit 310 can't be carried out correct access action.Yet, in the present embodiment, by reading the stored customizing messages of storage array, and reading result is compared with a Given information, can learn just whether storage unit can carry out correct access action.Therefore, the impact that can avoid the storage unit misoperation to cause.
In addition, processing module 315 can be according to detection signal S
P1And S
P2, learn the voltage level V of first and second pin of storage unit 310
P1And V
P2, then according to voltage level V
P1And V
P2, make storage unit 310 enter a test pattern or an operator scheme.
One may embodiment in, as the voltage level V of the first pin of storage unit 310
P1During for high levels, if the voltage level V of the second pin of storage unit 310
P2During for high levels, make storage unit 310 enter test pattern.In test pattern, the customizing messages IN that access module 313 provides outside
SPEBe stored in storage array 311.
Yet, as the voltage level V of the first pin of storage unit 310
P1During for high levels, if the voltage level V of the second pin
P2While being not high levels, make storage unit 310 enter operator scheme.In other embodiments, as long as the voltage level V of the first pin of storage unit 310
P1For high levels, access module 313 and comparison module 314 just decommission immediately.At this moment, processing module 315 is according to the voltage level V of the second pin
P2, make storage unit 310 enter operator scheme or test pattern.
Unless separately define, all belong to (comprising technology and science vocabulary) those skilled in the art's of the present invention general understanding at these all vocabulary.In addition, unless clear expression, it is consistent that the definition of vocabulary in general dictionary should be interpreted as in article with its correlative technology field meaning, and should not be construed as perfect condition or too formal voice.
Although the present invention discloses as above with preferred embodiment; so it is not in order to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when doing a little change and retouching, so protection scope of the present invention is when with claim institute confining spectrum, being as the criterion.
Claims (12)
1. a control method, is characterized in that, described control method is applicable to an electronic installation, and described electronic installation has a storage unit, and described storage unit has a storage array, and described storage array has a customizing messages, and described control method comprises:
When described electronic installation operates under a power on mode, and an operating voltage has been while having produced, output one enable signal;
, according to described enable signal, read described customizing messages, in order to produce a reading result; And
Judge whether described reading result equals a Given information, wherein work as described reading result and equal described Given information, just make described storage unit enter an operator scheme.
2. control method as claimed in claim 1, is characterized in that, when described reading result is not equal to described Given information, again reads described customizing messages, and judge whether the result after again reading equals described Given information.
3. control method as claimed in claim 1, is characterized in that, described control method more comprises:
Judge the voltage level of one first pin of described storage unit; And
Judge the voltage level of one second pin of described storage unit, wherein punctual greater than one first default position, accurate according to the position of described the second pin when the voltage level of described the first pin, make described storage unit enter described operator scheme or a test pattern;
Accurate punctual greater than one second default position when the position of described the second pin, make described storage unit enter described test pattern, unpunctual greater than the described second default position when the position of described the second pin standard, make described storage unit enter described operator scheme.
4. control method as claimed in claim 1, is characterized in that, described control method more comprises:
Judge the voltage level of one first pin of described storage unit; And
Judge the one second received number of pulses of pin of described storage unit, the position of wherein working as described the first pin is accurate greater than one first default position on time,, according to the received number of pulses of described the second pin, make described storage unit enter described operator scheme or a test pattern;
Wherein when the received number of pulses of described the second pin during greater than a preset value, make described storage unit enter described test pattern, during not greater than described preset value, make described storage unit enter described operator scheme when the received number of pulses of described the second pin.
5. control method as described in claim 3 or 4, is characterized in that, under described test pattern, described customizing messages write described storage array.
6. an electronic installation, is characterized in that, described electronic installation comprises:
One storage unit receives an operating voltage, and comprises:
One storage array, have a customizing messages and a set information;
One detecting module, according to described operating voltage, output one enable signal;
One access module, read described customizing messages, in order to produce a reading result;
One comparison module, more described reading result and a Given information;
One processing module,, according to described enable signal, enable described access module, and in order to produce described reading result, when described reading result equaled described Given information, the described set information of access, entered an operator scheme in order to make described storage unit; And
One main unit, when described storage unit enters under described operator scheme, the described storage unit of access.
7. electronic installation as claimed in claim 6, it is characterized in that, when described reading result is not equal to described Given information, described processing module enables described access module again, in order to again to read described customizing messages, and described comparison module re-starts comparison.
8. electronic installation as claimed in claim 6, it is characterized in that, described storage unit has one first pin and one second pin, described first and second pin of described detecting module detecting, when the voltage level of described the first pin is preset the position standard greater than one first, and the voltage level of described the second pin is inaccurate greater than one second default position, and described processing module makes described storage unit enter described operator scheme;
Accurate greater than the described first default position when the voltage level of described the first pin, and the voltage level of described the second pin is accurate greater than the described second default position, and described processing module enables described access module, in order to described customizing messages is write in described storage array.
9. electronic installation as claimed in claim 6, it is characterized in that, described storage unit has one first pin and one second pin, described first and second pin of described detecting module detecting, when the voltage level of described the first pin is preset the position standard greater than one first, and the received number of pulses of described the second pin is not greater than a preset value, and described processing module makes described storage unit enter described operator scheme;
When the voltage level of described the first pin is preset the position standard greater than described first, and the received number of pulses of described the second pin is greater than described preset value, described processing module enables described access module, in order to described customizing messages is write in described storage array.
10. electronic installation as claimed in claim 6, is characterized in that, described Given information is produced by a logic module.
11. electronic installation as claimed in claim 6, is characterized in that, when described detecting module receives described operating voltage, and continues a set time, described detecting module is just exported described enable signal.
12. electronic installation as claimed in claim 6, is characterized in that, described storage unit is a flash body.
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| CN201210141515.4A CN103390421B (en) | 2012-05-09 | 2012-05-09 | Control method and use the electronic installation of this control method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210141515.4A CN103390421B (en) | 2012-05-09 | 2012-05-09 | Control method and use the electronic installation of this control method |
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| CN103390421B CN103390421B (en) | 2016-08-17 |
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| CN1897156A (en) * | 2005-07-13 | 2007-01-17 | 三星电子株式会社 | Phase change random access memory (pram) device having variable drive voltages |
| US20070159889A1 (en) * | 2006-01-12 | 2007-07-12 | Dong-Ku Kang | Programming method for flash memory capable of compensating reduction of read margin between states due to hot temperature stress |
| US20070234083A1 (en) * | 2006-02-28 | 2007-10-04 | Hoi-Jin Lee | Integrated circuit having multiple power domains |
| CN101752000A (en) * | 2008-10-21 | 2010-06-23 | 力晶半导体股份有限公司 | Non-volatilization semiconductor memory and the write-in method thereof |
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2012
- 2012-05-09 CN CN201210141515.4A patent/CN103390421B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1897156A (en) * | 2005-07-13 | 2007-01-17 | 三星电子株式会社 | Phase change random access memory (pram) device having variable drive voltages |
| US20070159889A1 (en) * | 2006-01-12 | 2007-07-12 | Dong-Ku Kang | Programming method for flash memory capable of compensating reduction of read margin between states due to hot temperature stress |
| CN101000803A (en) * | 2006-01-12 | 2007-07-18 | 三星电子株式会社 | Programming method for flash memory capable of compensating reduction of read margin between states |
| US20070234083A1 (en) * | 2006-02-28 | 2007-10-04 | Hoi-Jin Lee | Integrated circuit having multiple power domains |
| CN101752000A (en) * | 2008-10-21 | 2010-06-23 | 力晶半导体股份有限公司 | Non-volatilization semiconductor memory and the write-in method thereof |
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