CN103383922A - Low-K dielectric barrier layer and forming method thereof - Google Patents
Low-K dielectric barrier layer and forming method thereof Download PDFInfo
- Publication number
- CN103383922A CN103383922A CN2012101374559A CN201210137455A CN103383922A CN 103383922 A CN103383922 A CN 103383922A CN 2012101374559 A CN2012101374559 A CN 2012101374559A CN 201210137455 A CN201210137455 A CN 201210137455A CN 103383922 A CN103383922 A CN 103383922A
- Authority
- CN
- China
- Prior art keywords
- low
- layer
- dielectric
- barrier layer
- boron compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a low-K dielectric barrier layer and a forming method of the low-K dielectric barrier layer. The method includes the steps of providing a substrate with a low-K dielectric layer, and forming the low-K dielectric barrier layer on the low-K dielectric layer, wherein the low-K dielectric barrier layer comprises a carbon and boron compound layer and the carbon and boron compound layer is formed through the anaerobic plasma technology. The low-K dielectric barrier layer comprises the carbon and boron compound layer and the carbon and boron compound layer is formed through the anaerobic plasma technology, therefore, the problem that in the prior art, the low-K dielectric layer is damaged due to the fact that the low-K dielectric barrier layer is formed through the oxygen plasma technology is solved, and reliability of the semiconductor technology is improved.
Description
Technical field
The present invention relates to field of IC technique, particularly a kind of low-K dielectric barrier layer and forming method thereof.
Background technology
At present, semiconductor circuit has developed into the integrated circuit (integrated circuit, IC) with multilayer interconnection.In the IC of multilayer interconnection, the electric conducting material on interconnection layer need to carry out electric insulation by the electric conducting material on dielectric layer and another interconnection layer.
But in the IC of single or multiple lift interconnection, all can form electric capacity between the electric conducting material with the dielectric layer separation, the electric capacity that this interconnection forms is not needed in design process.Be inversely proportional to the interconnection resistance (R) of IC and the product of the electric capacity (C) of interconnection due to the speed of IC, the product of described RC, namely the RC constant must be as far as possible little, in order to promote suitable signal transmission and switching speed, and reduces as far as possible signal cross-talk.Along with to the more growing requirement of high integration and miniaturization of components of IC, be RC constant restriction in IC to a key constraints of system speed.Therefore, reducing the resistance of IC interconnection and electric capacity improves the performance of IC and plays an important role.
A kind of method of electric capacity that reduces between interconnection layer is to use low K dielectric layer, namely uses low-K material as the rete of realizing electric insulation between interconnection layer.Described low-K material is for example: the Si oxide of organic polymer, amorphous chlorination carbon, microminiature foamed plastics, the silica-based insulator that includes organic polymer, the carbon that adulterated and the Si oxide of the chlorine that adulterated.Wherein, K represents dielectric coefficient, and high and low is that the dielectric coefficient of described silicon dioxide is generally 3.9 for the dielectric coefficient of silicon dioxide.
Be one deck media coating that loosens very much due to low K dielectric layer, therefore, for the reliability of formed device architecture, usually form one deck low-K dielectric barrier layer on described low K dielectric layer.In prior art, described low-K dielectric barrier layer generally includes BD (Black Diamond, black diamond) layer and is positioned at TEOS (tetraethoxysilane) layer on described BD layer.In the forming process of described BD layer and TEOS layer, all will use oxygen, and the use of oxygen will destroy the performance of low K dielectric layer.Particularly in the forming process of BD layer, due to compared to the TEOS layer, the more close low K dielectric layer of BD layer is thus, in the forming process of BD layer, larger for the damage of low K dielectric layer performance.
Wherein, the damage for the low K dielectric layer performance shows: make the K value of low K dielectric layer be offset (being specially bigger than normal), will cause thus the electric capacity between interconnection layer to increase, reduced the performance of semiconductor circuit.Please refer to Fig. 1, it is the capacitance contrast schematic diagram of the low K dielectric layer before and after formation BD layer.As shown in Figure 1, the K value be 2.59 low K dielectric layer after forming the BD layer, its K value is offset to 2.91, and is corresponding, capacitance also rises to approximately 0.25PF/um by about 0.17PF/um, namely makes capacitance increase significantly occur.Certainly, other process conditions are all constant, this shows that the formation (being the use of oxygen) of BD layer is for the tremendous influence of the K value of low K dielectric layer.
Summary of the invention
The object of the present invention is to provide a kind of low-K dielectric barrier layer and forming method thereof, to solve existing technique problem for the damage of low K dielectric layer in the process that forms the low-K dielectric barrier layer.
For solving the problems of the technologies described above, the invention provides the formation method on a kind of low-K dielectric barrier layer, comprising:
Substrate with low K dielectric layer is provided;
Form the low-K dielectric barrier layer on described low K dielectric layer, described low-K dielectric barrier layer comprises the carbon-boron compound layer, and described carbon-boron compound layer forms by oxygen-free plasmas technique.
Optionally, in the formation method on described low-K dielectric barrier layer, described carbon-boron compound layer forms by the helium plasma process.
Optionally, in the formation method on described low-K dielectric barrier layer, the flow of described helium is 500sccm～2000sccm.
Optionally, in the formation method on described low-K dielectric barrier layer, described carbon-boron compound layer forms by the argon plasma body technology.
Optionally, in the formation method on described low-K dielectric barrier layer, the flow of described argon gas is 500sccm～2000sccm.
Optionally, in the formation method on described low-K dielectric barrier layer, the reacting gas that forms described carbon-boron compound layer comprises: B
2H
6And C
2H
2
Optionally, in the formation method on described low-K dielectric barrier layer, described reacting gas B
2H
6And C
2H
2Flow be 500sccm～2000sccm.
Optionally, in the formation method on described low-K dielectric barrier layer, the time that forms described carbon-boron compound layer process is 5s～50s, and power is 100w～150w.
Optionally, in the formation method on described low-K dielectric barrier layer, the thickness of described carbon-boron compound layer is 20 dusts～300 dusts.
Optionally, in the formation method on described low-K dielectric barrier layer, the reacting gas that forms described carbon-boron compound layer comprises: ethyl dimethylmethane and C
2H
2
Optionally, in the formation method on described low-K dielectric barrier layer, described low-K dielectric barrier layer also comprises the TEOS layer, and described TEOS layer is positioned on described carbon-boron compound layer.
Accordingly, the present invention also provides a kind of formed low-K dielectric of formation method barrier layer by above-mentioned low-K dielectric barrier layer, described low-K dielectric barrier layer comprises: the carbon-boron compound layer, described carbon-boron compound layer forms by oxygen-free plasmas technique, and described carbon-boron compound layer is positioned on the substrate with low K dielectric layer.
In low-K dielectric provided by the invention barrier layer and forming method thereof, described low-K dielectric barrier layer comprises the carbon-boron compound layer, described carbon-boron compound layer forms by oxygen-free plasmas technique, thus, avoided oxygen plasma body technology formation low-K dielectric barrier layer in existing technique, thereby cause the problem to the damage of low K dielectric layer, and then improved the reliability of semiconductor technology.
Description of drawings
Fig. 1 is the capacitance contrast schematic diagram of the low K dielectric layer before and after formation BD layer;
Fig. 2 is the schematic flow sheet of formation method on the low-K dielectric barrier layer of the embodiment of the present invention;
Fig. 3 a～3c is the generalized section of device in the formation method on low-K dielectric barrier layer of the embodiment of the present invention.
Embodiment
Low-K dielectric barrier layer that the present invention is proposed below in conjunction with the drawings and specific embodiments and forming method thereof is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the present invention lucidly.
The application's core concept is, in the process that forms the low-K dielectric barrier layer, do not use the oxygen plasma body technology, especially, be arranged in the process of the rete that plays barrier function on low K dielectric layer in formation, do not use the oxygen plasma body technology, thus, avoid to a certain extent oxygen plasma body technology formation low-K dielectric barrier layer in existing technique, thereby caused the problem to the damage of low K dielectric layer, and then improved the reliability of semiconductor technology.
Please refer to Fig. 2, it is the schematic flow sheet of formation method on the low-K dielectric barrier layer of the embodiment of the present invention.As shown in Figure 2, the formation method on described low-K dielectric barrier layer comprises:
S20: the substrate with low K dielectric layer is provided;
S21: form the low-K dielectric barrier layer on described low K dielectric layer, described low-K dielectric barrier layer comprises the carbon-boron compound layer, and described carbon-boron compound layer forms by oxygen-free plasmas technique.
At this, comprise the carbon-boron compound layer by described low-K dielectric barrier layer, described carbon-boron compound layer forms by oxygen-free plasmas technique, avoided oxygen plasma body technology formation low-K dielectric barrier layer in existing technique, thereby cause the problem to the damage of low K dielectric layer, and then improved the reliability of semiconductor technology.
Concrete, please refer to Fig. 3 a～3c, it is the generalized section of formation method on the low-K dielectric barrier layer of the embodiment of the present invention.
As shown in Fig. 3 a, substrate 30 is provided, described substrate 30 comprises low K dielectric layer 32.Further, described substrate 30 also can comprise separator 31, and described low K dielectric layer 32 is positioned on described separator 31.Described separator 31 can be used for preventing that the metal in metal interconnecting layer from spreading, with the reliability of raising semiconductor technology and the quality of formed device.Certainly, also can further comprise metal interconnecting layer, described separator 31 is positioned on described metal interconnecting layer, and other semiconductor device or semiconductor film, and the application is not construed as limiting this.
Then, as shown in Fig. 3 b, form carbon-boron compound layer 41 on described low K dielectric layer 32, described carbon-boron compound layer 41 forms by oxygen-free plasmas technique, and described carbon-boron compound layer 41 is as the barrier layer of low K dielectric layer 32.Because described carbon-boron compound layer 41 is formed by oxygen-free plasmas technique, thus, just to have avoided forming in the process on low-K dielectric barrier layer, oxygen is for the infringement of low K dielectric layer.
Further, described carbon-boron compound layer 41 forms by the helium plasma process or forms by the argon plasma body technology.That is, can utilize helium or argon gas to carry out plasma etch process and form described carbon-boron compound layer 41.Preferably, the flow of described helium is 500sccm～2000sccm, and the flow of described argon gas is 500sccm～2000sccm.
In the present embodiment, the reacting gas of the described carbon-boron compound layer 41 of formation comprises: B
2H
6And C
2H
2Concrete, form described carbon-boron compound layer 41 by following reaction formula:
B
2H
6+C
2H
2+He(Ar)→B
xC
yH
z。
Wherein, described B
2H
6And C
2H
2Flow be 500sccm～2000sccm, preferred, described B
2H
6Flow be 600sccm, 800sccm, 1000sccm, 1200sccm, 1500sccm, 1800sccm; Described C
2H
2Flow be 600sccm, 800sccm, 1000sccm, 1200sccm, 1500sccm, 1800sccm.
Further, the time that forms described carbon-boron compound layer 41 technique is 5s～50s, and power is 100w～150w.Preferably, the time of described carbon-boron compound layer 41 technique of formation is 10s, 15s, 18s, 20s, 35s, 40s, 45s; Power is 110w, 120w, 130w, 145w.
In the present embodiment, the thickness of formed carbon-boron compound layer 41 is 20 dusts～300 dusts, and preferred, the thickness of formed carbon-boron compound layer 41 is 50 dusts, 85 dusts, 130 dusts, 200 dusts, 265 dusts.The function on barrier layer can be realized by described carbon-boron compound layer 41, the damage for low K dielectric layer 32 can be avoided again.
In other embodiments of the invention, the reacting gas of the described carbon-boron compound layer 41 of formation also can comprise: ethyl dimethylmethane (dimethylmethane) and C
2H
2The application is not construed as limiting this.
Further, as shown in Fig. 3 c, form in turn TEOS layer 42, TiN layer 43 and BARC layer 44 on described carbon-boron compound layer 41.In the present embodiment, the final low-K dielectric barrier layer that forms 40 comprises: carbon-boron compound layer 41, be positioned at TEOS layer 42 on described carbon-boron compound layer 41, be positioned at the TiN layer 43 on described TEOS layer 42 and be positioned at BARC layer 44 on described TiN layer 43.Finally, stop and protect for low K dielectric layer 32 by low-K dielectric barrier layer 40 realizations that comprise stratified film.Certainly, in other embodiments of the invention, the carbon-boron compound layer 41 that described low-K dielectric barrier layer 40 can only comprise wherein, the application is not construed as limiting this.
Accordingly, formation method by above-mentioned low-K dielectric barrier layer has formed low-K dielectric barrier layer 40, described low-K dielectric barrier layer 40 comprises: carbon-boron compound layer 41, described carbon-boron compound layer 41 forms by oxygen-free plasmas technique, and 41 layers of described carbon-boron compounds are positioned on the substrate 30 with low K dielectric layer 32.
Foregoing description is only the description to preferred embodiment of the present invention, is not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure all belong to the protection range of claims.
Claims (12)
1. the formation method on a low-K dielectric barrier layer, is characterized in that, comprising:
Substrate with low K dielectric layer is provided;
Form the low-K dielectric barrier layer on described low K dielectric layer, described low-K dielectric barrier layer comprises the carbon-boron compound layer, and described carbon-boron compound layer forms by oxygen-free plasmas technique.
2. the formation method on low-K dielectric as claimed in claim 1 barrier layer, is characterized in that, described carbon-boron compound layer forms by the helium plasma process.
3. the formation method on low-K dielectric as claimed in claim 2 barrier layer, is characterized in that, the flow of described helium is 500sccm～2000sccm.
4. the formation method on low-K dielectric as claimed in claim 1 barrier layer, is characterized in that, described carbon-boron compound layer forms by the argon plasma body technology.
5. the formation method on low-K dielectric as claimed in claim 4 barrier layer, is characterized in that, the flow of described argon gas is 500sccm～2000sccm.
6. the formation method on as described in any one in claim 2 to 5 low-K dielectric barrier layer, is characterized in that, the reacting gas that forms described carbon-boron compound layer comprises: B
2H
6And C
2H
2
7. the formation method on low-K dielectric as claimed in claim 6 barrier layer, is characterized in that described reacting gas B
2H
6And C
2H
2Flow be 500sccm～2000sccm.
8. the formation method on low-K dielectric as claimed in claim 7 barrier layer, is characterized in that, the time that forms described carbon-boron compound layer process is 5s～50s, and power is 100w～150w.
9. the formation method on low-K dielectric as claimed in claim 7 barrier layer, is characterized in that, the thickness of described carbon-boron compound layer is 20 dusts～300 dusts.
10. the formation method on low-K dielectric as claimed in claim 1 barrier layer, is characterized in that, the reacting gas that forms described carbon-boron compound layer comprises: ethyl dimethylmethane and C
2H
2
11. the formation method on low-K dielectric as claimed in claim 1 barrier layer is characterized in that, described low-K dielectric barrier layer also comprises the TEOS layer, and described TEOS layer is positioned on described carbon-boron compound layer.
12. the formed low-K dielectric of the formation method barrier layer on low-K dielectric as described in any one in claim 1 to 11 barrier layer is characterized in that, comprising:
The carbon-boron compound layer, described carbon-boron compound layer forms by oxygen-free plasmas technique, and described carbon-boron compound layer is positioned on the substrate with low K dielectric layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101374559A CN103383922A (en) | 2012-05-03 | 2012-05-03 | Low-K dielectric barrier layer and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101374559A CN103383922A (en) | 2012-05-03 | 2012-05-03 | Low-K dielectric barrier layer and forming method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103383922A true CN103383922A (en) | 2013-11-06 |
Family
ID=49491683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101374559A Pending CN103383922A (en) | 2012-05-03 | 2012-05-03 | Low-K dielectric barrier layer and forming method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103383922A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6165891A (en) * | 1999-11-22 | 2000-12-26 | Chartered Semiconductor Manufacturing Ltd. | Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer |
| WO2003005432A1 (en) * | 2001-07-05 | 2003-01-16 | Kabushiki Kaisha Watanabe Shoko | Method and apparatus for forming film having low dielectric constant, and electronic device using the film |
| CN101093825A (en) * | 2006-06-22 | 2007-12-26 | 国际商业机器公司 | Electronic structures utilizing etch resistant boron and phosphorus materials and methods to form same |
| CN101110276A (en) * | 2006-07-21 | 2008-01-23 | 鸿富锦精密工业（深圳）有限公司 | Protecting film structure |
| CN101246926A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Amorphous boron carbon alloy and photovoltaic application thereof |
| CN101743631A (en) * | 2007-07-13 | 2010-06-16 | 应用材料股份有限公司 | Boron derived materials deposition method |
| KR20110083307A (en) * | 2010-01-14 | 2011-07-20 | 삼성전자주식회사 | Thin film transistor array substrate and method thereof |
-
2012
- 2012-05-03 CN CN2012101374559A patent/CN103383922A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6165891A (en) * | 1999-11-22 | 2000-12-26 | Chartered Semiconductor Manufacturing Ltd. | Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer |
| WO2003005432A1 (en) * | 2001-07-05 | 2003-01-16 | Kabushiki Kaisha Watanabe Shoko | Method and apparatus for forming film having low dielectric constant, and electronic device using the film |
| CN101093825A (en) * | 2006-06-22 | 2007-12-26 | 国际商业机器公司 | Electronic structures utilizing etch resistant boron and phosphorus materials and methods to form same |
| CN101110276A (en) * | 2006-07-21 | 2008-01-23 | 鸿富锦精密工业（深圳）有限公司 | Protecting film structure |
| CN101246926A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Amorphous boron carbon alloy and photovoltaic application thereof |
| CN101743631A (en) * | 2007-07-13 | 2010-06-16 | 应用材料股份有限公司 | Boron derived materials deposition method |
| KR20110083307A (en) * | 2010-01-14 | 2011-07-20 | 삼성전자주식회사 | Thin film transistor array substrate and method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6068492B2 (en) | Low dielectric constant dielectric protective spacer for forming through-substrate via pattern in low dielectric constant wiring layer | |
| CN102117837B (en) | Thin film transistor | |
| CN102222641A (en) | Method for forming a metal oxidation barrier layer of a copper interconnect | |
| CN105336680A (en) | Semiconductor device, manufacturing method thereof and electronic device | |
| CN102723359B (en) | Thin-film transistor, manufacture method of thin-film transistor, array substrate and display device | |
| US20160358811A1 (en) | Interconnect structure | |
| CN103426749B (en) | The formation method of opening and stacked structure | |
| CN1501453A (en) | Manufacturing method of low dielectric layer | |
| CN103824887A (en) | Metallic oxide semiconductor thin film transistor and manufacturing method thereof | |
| CN1508868A (en) | Semiconductor device and its manufacturing method | |
| CN103383922A (en) | Low-K dielectric barrier layer and forming method thereof | |
| CN102122632B (en) | Method for forming dielectric film with low k-value | |
| US7855139B2 (en) | Systems and methods for controlling the effective dielectric constant of materials used in a semiconductor device | |
| CN103928389A (en) | Forming method of semiconductor structure | |
| CN103367232B (en) | The formation method of semiconductor structure | |
| CN103579089A (en) | Semiconductor structure and forming method thereof | |
| CN101996929B (en) | Forming method of dual-damascene structure and semiconductor structure | |
| WO2008155832A1 (en) | Semiconductor device, and its manufacturing method | |
| CN103426745B (en) | The formation method of semiconductor structure | |
| US9028918B2 (en) | Forming a hardmask capping layer | |
| TWI751187B (en) | Graphene nanoribbon interconnects and interconnect liners | |
| CN103390577B (en) | Low-K dielectric barrier layer and forming method thereof | |
| JP2014072228A (en) | Semiconductor device manufacturing method | |
| CN107978673B (en) | Semiconductor device, preparation method and electronic device | |
| US6627533B2 (en) | Method of manufacturing an insulation film in a semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20131106 |
|
| RJ01 | Rejection of invention patent application after publication |