CN103378292A - Schottky contact organic photosensitive field-effect transistor - Google Patents
Schottky contact organic photosensitive field-effect transistor Download PDFInfo
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- CN103378292A CN103378292A CN2012101289359A CN201210128935A CN103378292A CN 103378292 A CN103378292 A CN 103378292A CN 2012101289359 A CN2012101289359 A CN 2012101289359A CN 201210128935 A CN201210128935 A CN 201210128935A CN 103378292 A CN103378292 A CN 103378292A
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- organic photosensitive
- channel material
- effect transistor
- drain electrode
- source electrode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses a structure and manufacturing method of a Schottky contact organic photosensitive field-effect transistor. The manufacturing method comprises the following steps that low-work function metal is used as a drain electrode and a source electrode for a p-type organic photosensitive channel material so that a source electrode-organic photosensitive channel material and a drain electrode-organic photosensitive channel material can form hole Schottky contact, and high-work function metal is used as a drain electrode and a source electrode for an n-type organic photosensitive channel material so that a source electrode-organic photosensitive channel material and a drain electrode-organic photosensitive channel material can form electronic Schottky contact. The source electrodes, the drain electrodes and organic photosensitive channels form Schottky contact, therefore, the impedance between the drain electrodes and the source electrodes without illumination is increased, dark currents are lowered greatly, and photocurrents are reduced only slightly. Therefore, the Schottky contact organic photosensitive field-effect transistor manufactured according to the manufacturing method has the advantages that the dark currents are low, and the ratio of the photocurrents to the dark currents is high.
Description
Technical field
The present invention relates to a kind of organic photosensitive field effect transistor manufacture method, the manufacturing of the photosensitive field effect transistor of especially a kind of Schottky contacts belongs to the solid electronic device technical field.
Background technology
The organic photosensitive field effect transistor is comprised of substrate, grid, gate medium, organic photosensitive channel material, source electrode and drain electrode usually.Most of organic semiconducting materials belongs to single carrier transport type, and namely it is far longer than mobility to another kind of charge carrier to a kind of mobility of charge carrier.Usually the electron mobility material that is far longer than hole mobility is called the electric transmission shaped material, is called for short the n-shaped material, and hole mobility is far longer than the material of electron mobility and is called the hole transport shaped material, is called for short the p-shaped material.In organic semiconductor, electronics does not occupy track (lowest unoccupied molecular orbital)-(LUMO) transmission minimum, and transmit at the highest track (highest occupied molecular orbital)-(HOMO) that occupied in the hole.The organic photosensitive field effect transistor adopts contact at the bottom of contact at the bottom of the bottom gate, bottom gate top contact, the top grid, four kinds of structures of top grid top contact usually.
Compare with inorganic photosensitive field effect transistor, the organic photosensitive field effect transistor has the conversion efficiency height, can the large tracts of land low cost fabrication etc. advantage.In order to increase the current delivery ability between source electrode and the drain electrode as far as possible, the organic photosensitive field effect transistor selects Fermi level near source electrode and the drain electrode of the metal conduct of the carrier transport energy level of organic photosensitive channel material usually.For p-type organic photosensitive channel material, usually select high-work-function metal as source electrode and drain electrode, the hole is injected into the potential barrier of organic photosensitive channel material HOMO energy level with reduce from drain electrode, so that source electrode-organic photosensitive channel material, and drain electrode-organic photosensitive channel material forms the hole ohmic contact.And for n-type organic photosensitive channel material, usually select low workfunction metal as source electrode and drain electrode, electronics is injected into the potential barrier of organic photosensitive channel material lumo energy with reduce from source electrode, make source electrode-organic photosensitive channel material, and drain electrode-organic photosensitive channel material forms the electronics ohmic contact.The organic photosensitive field effect transistor dark current of this structure is usually larger, so that photoelectric current/dark current ratio is difficult to improve.
Summary of the invention
The object of the invention is to overcome the large deficiency of above conventional organic photosensitive field effect transistor dark current, propose a kind of organic photosensitive field effect transistor based on Schottky contacts, to solve present organic photosensitive field effect transistor photoelectric current/dark current than little problem.
The object of the present invention is achieved like this: for p-type organic photosensitive channel material, select low workfunction metal as drain electrode and source electrode, such as Al, Ca, Mg etc., so that source electrode-organic photosensitive channel material, and drain electrode-organic photosensitive channel material forms the hole Schottky contacts; For n-type organic photosensitive channel material, select high-work-function metal, such as Au, Pt etc., as drain electrode and source electrode, so that source electrode-organic photosensitive channel material, and drain electrode-organic photosensitive channel material forms the electronics Schottky contacts.Schottky contacts organic photosensitive field effect transistor according to above-mentioned technical thought invention comprises substrate, grid, gate medium, organic photosensitive channel material, source electrode and drain electrode, and wherein source electrode and drain electrode all form Schottky contacts with the organic photosensitive channel material.The Schottky contacts that source electrode and drain electrode and organic photosensitive raceway groove form, the impedance when having increased unglazed the photograph between drain electrode and the source electrode, thus reduced dark current.Therefore the Schottky contacts organic photosensitive field effect transistor that adopts the present invention to prepare has that dark current is little, photoelectric current/dark current is than large advantage.
Description of drawings
Fig. 1 is contact organic photosensitive field-effect tube structure schematic diagram at the bottom of the bottom gate;
Fig. 2 is bottom gate top contact organic photosensitive field-effect tube structure schematic diagram;
Fig. 3 is contact organic photosensitive field-effect tube structure schematic diagram at the bottom of the grid of top;
Fig. 4 is top grid top contact organic photosensitive field-effect tube structure schematic diagram;
Fig. 5 is that the organic photosensitive channel material is the p-type, schematic diagram of the present invention when adopting the bottom gate top contact;
Fig. 6 is that the organic photosensitive channel material is the n-type, schematic diagram of the present invention when adopting the bottom gate top contact.
Embodiment
With heavy doping n
+-Si/SiO
2Be grid/gate medium, and double as substrate, pentacene is photosensitive raceway groove, adopts the preparation process of the present invention of bottom gate top contact as follows:
A) clean n with standard technology
+-Si/SiO
2Substrate;
B) prepare one deck pentacene as p-type organic photosensitive raceway groove with vacuum evaporation method;
C) prepare low workfunction metal (such as Al) as drain electrode and source electrode with vacuum evaporation method, channel length and electrode area limit by mask plate;
D) with the device package of making.
Claims (5)
1. Schottky contacts organic photosensitive field effect transistor is characterized in that its source electrode and drain electrode and organic photosensitive channel material form Schottky contacts.
2. Schottky contacts claimed in claim 1, it is characterized in that when the organic photosensitive channel material is the p-type, adopt low workfunction metal to make source electrode and drain electrode, make source electrode-organic photosensitive channel material, and drain electrode-organic photosensitive channel material forms the hole Schottky contacts; And when the organic photosensitive channel material is the n-type, select high-work-function metal preparation drain electrode and source electrode, make source electrode-organic photosensitive channel material, and drain electrode-organic photosensitive channel material forms the electronics Schottky contacts.
3. Schottky contacts organic photosensitive field effect transistor claimed in claim 1 is characterized in that the structure of organic photosensitive channel material is unrestricted, can be organic amorphous, nanocrystalline, polycrystalline and crystal film, also can be bilayer or multilayer hetero-structure film.
4. Schottky contacts organic photosensitive field effect transistor claimed in claim 1 is characterized in that the composition of organic photosensitive channel material is unrestricted, can be organic photosensitive material pure, that mix or mix.
5. Schottky contacts organic photosensitive field effect transistor claimed in claim 1 is characterized in that its structure is unrestricted, can adopt the structure of contact and top grid top contact at the bottom of contact at the bottom of the bottom gate, bottom gate top contact, the top grid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101289359A CN103378292A (en) | 2012-04-27 | 2012-04-27 | Schottky contact organic photosensitive field-effect transistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101289359A CN103378292A (en) | 2012-04-27 | 2012-04-27 | Schottky contact organic photosensitive field-effect transistor |
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| CN103378292A true CN103378292A (en) | 2013-10-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012101289359A Pending CN103378292A (en) | 2012-04-27 | 2012-04-27 | Schottky contact organic photosensitive field-effect transistor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746074A (en) * | 2014-01-02 | 2014-04-23 | 电子科技大学 | Photosensitive organic thin-film transistor based on Schottky contact and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005277202A (en) * | 2004-03-25 | 2005-10-06 | Mitsubishi Chemicals Corp | Organic field effect transistor |
| CN1697104A (en) * | 2005-04-18 | 2005-11-16 | 中国科学院长春应用化学研究所 | Electric contacting material and fapparatus of containing organic hetero junction |
| CN202736984U (en) * | 2012-04-27 | 2013-02-13 | 兰州大学 | Schottky contact organic photosensitive field effect tube |
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2012
- 2012-04-27 CN CN2012101289359A patent/CN103378292A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005277202A (en) * | 2004-03-25 | 2005-10-06 | Mitsubishi Chemicals Corp | Organic field effect transistor |
| CN1697104A (en) * | 2005-04-18 | 2005-11-16 | 中国科学院长春应用化学研究所 | Electric contacting material and fapparatus of containing organic hetero junction |
| CN202736984U (en) * | 2012-04-27 | 2013-02-13 | 兰州大学 | Schottky contact organic photosensitive field effect tube |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746074A (en) * | 2014-01-02 | 2014-04-23 | 电子科技大学 | Photosensitive organic thin-film transistor based on Schottky contact and manufacturing method thereof |
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Application publication date: 20131030 |