CN103377698A - Storage medium material, preparation method of storage medium material, and data storage method - Google Patents

Storage medium material, preparation method of storage medium material, and data storage method Download PDF

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CN103377698A
CN103377698A CN2012101337530A CN201210133753A CN103377698A CN 103377698 A CN103377698 A CN 103377698A CN 2012101337530 A CN2012101337530 A CN 2012101337530A CN 201210133753 A CN201210133753 A CN 201210133753A CN 103377698 A CN103377698 A CN 103377698A
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storage medium
medium material
polymeric layer
thickness
probe
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CN103377698B (en
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王锐
王圣楠
王小伟
裘晓辉
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National Center for Nanosccience and Technology China
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National Center for Nanosccience and Technology China
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Abstract

The invention provides a storage medium material, a preparation method of the storage medium material, and a data storage method. The storage medium material comprises a substrate, a polymer layer and a graphite layer which are sequentially laminated, wherein the thickness of the graphite layer is not more than 10 nanometers. When the storage medium material provided by the invention is used for data storage, data with high storage density and high quality can be acquired, the wear to the point of a needle can be effectively reduced, and a polymer material can be prevented from turning outwards.

Description

A kind of storage medium material and preparation method thereof and data storage method
Technical field
The present invention relates to a kind of storage medium material and preparation method thereof and a kind of data storage method.
Background technology
Along with the development of science and technology and the people explosive growth to the quantity of information requirement, electronics, optical device size develop into inexorable trend toward nanoscale.In recent years, researchers little, receive Precision Machining means and storage medium material and done a lot of researchs, wherein, for surperficial ultrahigh density storage technology mainly based on mechanical probes without mask job operation (such as the atomic force microscopy probe), can effectively change at nanoscale surface topography, crystal structure or optics, the electrology characteristic of particular memory dielectric material, be considered to realize one of powerful measure of high density data storage.Studies show that, it is most important to the minimum dimension and the raising graphical quality that reduce picture on surface to look for suitable storage medium material, under specific memory technology, suitable storage medium material can reduce the energy that consumes in the size of single measuring point and the erasable process greatly, thus Effective Raise storage density and energy conversion efficiency.Therefore, realize that based on the modification technology of storage medium material the nanoscale first-rate quality pattern has become a study hotspot.
At present, phase-change storage material and flexible polymeric materials are widely used as the ultrahigh density storage dielectric material.
Wherein, phase-changing energy storage material generally by the alloy composition of germanium, antimony, tellurium, can be realized by the annealing of different condition crystal and the non-crystal transformation of phase-changing energy storage material.Noncrystal is high resistance state, is designated as logical one; Crystal is low resistance state, is designated as logical zero.When carrying out the high density storage, apply a current impulse usually for the microprobe of conduction, probe tip can rise to a certain specified temp very soon.When needle point and phase-change storage material Surface Contact, by heat conduction make sample in the short time by high annealing.By amplitude and the duration of control current impulse, the temperature of needle point and sample just can be controlled, thereby sample can be realized the transformation between crystalline state and the amorphous state, i.e. transformation between " 0 " and " 1 ".Simultaneously, the zone that sample is annealed only limit to needle point and phase-change material contact point near, this size that has just guaranteed single measuring point has improved storage density greatly at nanoscale.Yet (storage density is near 1Tbit/inch when the spacing of measuring point is too near 2), contiguous scrubbing action will manifest, and when namely recording next number strong point with pyrometric probe, original data point can be eliminated because of heat radiation or conduction of heat around it.In addition, phase-change material is carried out often needing needle point to be raised to very high temperature (about 600 ℃) when erasable, and the heat that is transmitted to the needle point tip accounts for the ratio of whole microprobe heat less than 1%, so that energy consumption is very large, has increased use cost and also be unfavorable for environmental protection.
The common flexible polymeric materials that can be used as storage medium material (Young modulus is 1-5GPa) has polymethylmethacrylate (PMMA), polystyrene (PS) etc.This class material is made simple, and is with low cost, and ripe industrial preparative method is arranged, and is easy to extensive preparation.When they are used as storage medium material, often support substrate (such as silicon chip) deposition to form nanometer by simple spin coating or spray membrane technology at some and get final product to the thick film of micron order.Because gapped and strand ruptures easily between these polymeric materials, therefore, molecule is mobile and produce expendable plastic deformation easily under the effect of stress outside.Nano impress memory technology based on micro-nano probe is utilized these characteristics just, and sharp-pointed microprobe directly applies a pressure at polymer surfaces, can cause the polymkeric substance of polymkeric substance and needle point contact portion to produce mobile and is out of shape.When needle point lifted, polymer surfaces can stay next nano level pit, can be considered as a measuring point.This technology also can utilize probe to realize portrayal and the structure of flexible polymer surface micrometer/nanometer level arbitrary graphic pattern except realizing the high density storage on the flexible polymer surface.Simultaneously since its data recording and pattern structure simple to operate and finish after can utilize the microprobe in-situ scanning to read, therefore, the development flexible polymer becomes study hotspot gradually as the patterned surface dielectric material.
Summary of the invention
The object of the present invention is to provide a kind of new storage medium material and preparation method thereof and a kind of data storage method.
The invention provides a kind of storage medium material, wherein, this storage medium material comprises substrate, polymeric layer and the graphite linings that stacks gradually, and the thickness of described graphite linings is not more than 10 nanometers.
The present invention also provides the preparation method of above-mentioned storage medium material, and the method is included in and forms successively polymeric layer and graphite linings in the substrate, and the thickness of described graphite linings is not more than 10 nanometers.
In addition, the present invention also provides a kind of data storage method, the method comprise adopt probe with data carving on above-mentioned storage medium material.
The present inventor finds, although adopt polymkeric substance as storage medium material have data recording and pattern structure simple to operate and finish after can utilize the microprobe in-situ scanning to read advantage, but, when utilizing micro-nano probe to realize data storage or figure portrayal on the polymeric layer surface, need probe tip and polymeric layer surface under certain interaction force, to realize direct physical contact and relatively move, will cause wearing and tearing to needle point inevitably like this, make the most advanced and sophisticated rust of needle point; The polymer molecule of the part that is squeezed is simultaneously routed up with pinpoint movement easily, and above-mentioned two situations all can make graphical quality variation or storage density reduce, thereby has limited the application of polymer storage medium material.The present inventor stumbles on, stacked one deck graphite linings on polymeric layer, on the one hand, the model ylid bloom action power that exists between graphite linings and polymeric layer can be so that described graphite linings tightly be adsorbed on the polymeric layer surface, thereby plays the effect of protection polymeric layer; On the other hand, because the thickness of graphite linings is not more than 10 nanometers, be preferably the 0.35-2 nanometer, described graphite linings is again as thin and soft " paper ", easily bending and distortion, thereby the effective pressure of the outer bound pair polymer surfaces of conduction, with data carving on storage medium material.What is more important, because graphite has good lubrication, when probe is delineated on described storage medium material surface, needle point is actually with graphite and directly contacts, the fracture that the motion of needle point causes and turning up not only stoped polymeric material owing to can also significantly reduce storage medium material to the wearing and tearing of needle point.Therefore, this storage medium material that carries out finishing with graphite is expected to as a kind of more preferably storage medium material, is specially adapted to high density storage or figure portrayal based on microprobe.
A preferred embodiment of the invention, when described probe is the monocrystalline silicon probe, its elastic constant is 10-50N/m, suitable with stretching and the fracture strength of graphite, can play well coordinated effect with storage medium material provided by the invention, thereby the dynamics of easier control needle point obtains the data that storage density is larger, quality is higher.
Other features and advantages of the present invention will partly be described in detail in embodiment subsequently.
Description of drawings
Accompanying drawing is to be used to provide a further understanding of the present invention, and consists of the part of instructions, is used from explanation the present invention with following embodiment one, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the synoptic diagram of data storage method provided by the invention;
Fig. 2 is the synoptic diagram that working pressure range is determined in the data storage procedure;
The result that Fig. 3 obtains for the storage means that adopts embodiment 1;
The result that Fig. 4 obtains for the storage means that adopts embodiment 4 (right side) and Comparative Examples 1 (left side).
Description of reference numerals
The 1-graphite linings; The 2-polymeric layer; The 3-substrate; The 4-probe.
Embodiment
Below the specific embodiment of the present invention is elaborated.Should be understood that embodiment described herein only is used for description and interpretation the present invention, is not limited to the present invention.
Storage medium material provided by the invention comprises substrate, polymeric layer and the graphite linings that stacks gradually, and the thickness of described graphite linings is not more than 10 nanometers, more preferably the 0.35-2 nanometer.
According to the present invention, the material category of described substrate and thickness can carry out choose reasonable according to prior art, and for example, described substrate can be in silicon chip, nitrogenize silicon chip, metallic film and the plastic sheeting one or more.The thickness of described substrate can be the 0.3-1 millimeter.
According to the present invention, polymkeric substance in the described polymeric layer can be the existing various polymkeric substance that can be used as storage medium material, as a rule, realize high density storage or high quality graphics portrayal in order more to be conducive to probe on described storage medium material surface, under the preferable case, the Young modulus of the polymkeric substance in the described polymeric layer is 1-5GPa.Wherein, described Young modulus is measured according to the disclosed method of GB/T 1040.4-2006.Particularly, described polymkeric substance can be selected from one or more in polystyrene, polymethylmethacrylate, polyethyl methacrylate, polymethyl acrylate, polyethyl acrylate, polypropylene and the polyethylene terephthalate.The thickness of described polymeric layer also can be selected in the larger context, as a rule, when described thickness is preferably the 0.05-1 micron, can satisfy better the requirement of data storage.
The preparation method of storage medium material provided by the invention is included in and forms successively polymeric layer and graphite linings in the substrate, and the thickness of described graphite linings is not more than 10 nanometers, is preferably the 0.35-2 nanometer.
According to the present invention, the method that forms described polymeric layer can be existing the whole bag of tricks, for example, can comprise that the solution that will contain polymkeric substance is coated in the substrate and drying.As a rule, the described concentration that contains the solution of polymkeric substance can be 1-10 volume %, and described solution can be coated in the substrate more equably.The consumption of described polymkeric substance is so that the thickness of polymeric layer is preferably the 0.05-1 micron.It is as well known to those skilled in the art that the solution that will contain polymkeric substance is coated in suprabasil method, for example, can adopt spraying, spin coating, showering, brushing, impregnating method that described solution is coated in the substrate, be preferably spin coating, more preferably the rotating speed of spin coating is 800-3000rpm.In addition, the condition of described drying is as long as guaranteeing the solvent in the solution fully evaporates, and for example, the condition of described drying comprises that dry temperature can be 25-150 ℃, and the time can be 5 minutes-48 hours.
According to the present invention, the method that forms graphite linings can be existing the whole bag of tricks, for example, can adopt chemical vapour deposition technique, also can adopt the micromechanics stripping method, preferably adopts the micromechanics stripping method.Described micromechanics stripping method is as well known to those skilled in the art, for example, described micromechanics stripping method can be for adopting the evenly sticking powdered graphite of getting of adhesive tape, and the side and the polymeric layer that are stained with powdered graphite of this adhesive tape fitted tightly, remove adhesive tape, the consumption of described powdered graphite is so that form graphite linings at polymeric layer, more preferably so that the thickness of the graphite linings that forms is the 0.35-2 nanometer.In order to satisfy above-mentioned condition, with respect to 1m 2Adhesive tape, the consumption of described powdered graphite can be 5-20mg, is preferably 5-10mg.
The present invention does not limit especially to the particle diameter of described powdered graphite, for example, can be the 1-3 millimeter, can guarantee that like this graphite linings thickness that obtains is more even.
The preparation method of storage medium material provided by the invention preferably also comprises each ultrasonic cleaning 10min of acetone, ethanol and deionized water is used in substrate successively, with the pollutant removal with substrate surface.The condition of described ultrasonic cleaning is as well known to those skilled in the art, and for example, described ultrasonic frequency can be 15-30kHz, and described ultrasonic power can be 600-1000W.
In addition, data storage method provided by the invention comprise adopt probe with data carving on above-mentioned storage medium material.
Wherein, Fig. 1 is the synoptic diagram of data storage method provided by the invention.As shown in Figure 1, described storage medium material comprises substrate 3, polymeric layer 2 and the graphite linings 1 that stacks gradually.When adopting these storage medium material storage data, apply a pressure on the surface of probe 4, cause graphite linings 1 distortion with the needle point contact portion of probe 4, driving simultaneously polymeric layer 2 corresponding positions deforms, when needle point lifts, next nano level pit can be stayed in graphite linings 1 surface, thus with data carving on this storage medium material.
According to the present invention, described probe can for existing various can be with the probe of data carving on storage medium material, for example, what described probe can be in single crystal silicon material probe, silicon nitride probe, Au probe and the adamas probe is a kind of.Yet, the present inventor finds, the elastic constant of single crystal silicon material probe is 10-50N/m, suitable with pulling strengrth and the fracture strength of graphite, therefore, when described probe is preferably the single crystal silicon material probe, dynamics that can easier control needle point and the record of data, and be not easy graphite linings is punctured, use with storage medium material coordinated of the present invention and can very effectively improve storage density and storage quality.
As well known to those skilled in the art, for data carving on described storage medium material, need to exert pressure at probe.Only in the uncracked situation of graphite linings, could utilize this novel storage medium material to realize high-quality, the storage of highdensity data, and reduce wearing and tearing to needle point, therefore, adopt probe with data carving before on the above-mentioned storage medium material, should determine at first that applied pressure is big or small.
The present invention adopts following methods that described pressure is chosen, particularly, probe is connected on the controlled piezoelectric ceramic tube of movement, as shown in Figure 2, when probe presses down (horizontal ordinate is 0 position among the figure) when touching storage medium material, both can produce interaction force.When probe continues to press down so that the degree of graphite linings tensile deformation when surpassing its collapse strength (the figure acceptance of the bid is marked with the position of " graphite breakdown point "), graphite linings can be broken moment, probe pressure also can discharge thereupon, and needle point will penetrate rapidly in the polymkeric substance more soft below the graphite, polymkeric substance will turn up because of extruding and cause data to store unsuccessfully, this critical point is the breakdown point of graphite linings, with pressure setting work in less than the zone of this critical point, just can reduce the wearing and tearing to needle point, simultaneously also can avoid turning up of polymkeric substance, be that described pressure can for greater than 0 to less than breakdown point intensity, be preferably (1/3-2/3) collapse strength.
More than describe preferred implementation of the present invention in detail; but the present invention is not limited to the detail in the above-mentioned embodiment, in technical conceive scope of the present invention; can carry out multiple simple variant to technical scheme of the present invention, these simple variant all belong to protection scope of the present invention.
Need to prove that in addition each the concrete technical characterictic described in above-mentioned embodiment in reconcilable situation, can make up by any suitable mode.For fear of unnecessary repetition, the present invention is to the no longer separately explanation of various possible array modes.
In addition, also can carry out combination in any between the various embodiment of the present invention, as long as it is without prejudice to thought of the present invention, it should be considered as content disclosed in this invention equally.
Below will describe the present invention by embodiment.
In following examples, the particle diameter of powdered graphite is the 1-3 millimeter.
Preparation example 1
This preparation example is used for illustrating storage medium material provided by the invention and preparation method thereof.
With thickness be 0.3 millimeter, surface for the smooth silicon chip of nanoscale (available from SQI company, full name is Silicon Quest International, Inc, lower with) be immersed in successively in acetone, ethanol and the deionized water each ultrasonic cleaning 10 minutes, wherein, ultrasonic frequency is 20kHz, and ultrasonic power is 800W.Be that the acetone soln of the polystyrene (Young modulus is 3GPa) of 1 volume % is spin-coated in the treated substrate with concentration, the rotating speed of spin coating is 800rpm, and 150 ℃ lower dry 15 minutes, obtain thickness and be 0.05 micron polymeric layer.Adopt the evenly sticking powdered graphite of getting of adhesive tape, and the side and the polymeric layer that are stained with powdered graphite of this adhesive tape fitted tightly, remove adhesive tape, adopting Raman spectrum to find thickness at polymeric layer is the graphite linings of 0.35 nanometer, wherein, and with respect to 1m 2Adhesive tape, the consumption of described powdered graphite is 5mg, obtains storage medium material C1.
Preparation example 2
This preparation example is used for illustrating storage medium material provided by the invention and preparation method thereof.
With thickness be 1 millimeter, surface for the smooth nitrogenize silicon chip of nanoscale (available from SQI company, full name is Silicon Quest International, Inc) be immersed in successively in acetone, ethanol and the deionized water each ultrasonic cleaning 10 minutes, wherein, ultrasonic frequency is 20KHz, and ultrasonic power is 800W.Be that the acetone soln of the polymethylmethacrylate (Young modulus is 4GPa) of 10 volume % is spin-coated in the treated substrate with concentration, the rotating speed of spin coating is 800rpm, and 150 ℃ lower dry 15 minutes, obtain thickness and be 1 micron polymeric layer.Adopt the evenly sticking powdered graphite of getting of adhesive tape, and the side and the polymeric layer that are stained with powdered graphite of this adhesive tape fitted tightly, remove adhesive tape, adopting Raman spectrum to find thickness at polymeric layer is the graphite linings of 2 nanometers, wherein, and with respect to 1m 2Adhesive tape, the consumption of described powdered graphite is 10mg, obtains storage medium material C2.
Preparation example 3
This preparation example is used for illustrating storage medium material provided by the invention and preparation method thereof.
Be that 0.5 millimeter, surface were immersed in acetone, ethanol and the deionized water each ultrasonic cleaning 10 minutes successively for the smooth silicon chip of nanoscale with thickness, wherein, ultrasonic frequency is 20KHz, and ultrasonic power is 800W.Be that the acetone soln of the polymethyl acrylate (Young modulus is 2.5GPa) of 5 volume % is spin-coated in the treated substrate with concentration, the rotating speed of spin coating is 800rpm, and 150 ℃ lower dry 15 minutes, obtain thickness and be 0.3 micron polymeric layer.Adopt the evenly sticking powdered graphite of getting of adhesive tape, and the side and the polymeric layer that are stained with powdered graphite of this adhesive tape fitted tightly, remove adhesive tape, adopting Raman spectrum to find thickness at polymeric layer is the graphite linings of 1 nanometer, wherein, and with respect to 1m 2Adhesive tape, the consumption of described powdered graphite is 7mg, obtains storage medium material C3.
Preparation example 4
This preparation example is used for illustrating storage medium material provided by the invention and preparation method thereof.
Method according to preparation example 1 prepares storage medium material, and different is, with respect to 1m 2Adhesive tape, the consumption of described powdered graphite is 13mg, adopting Raman spectrum to find thickness at polymeric layer is the graphite linings of 5 nanometers, obtains storage medium material C4.
Contrast preparation example 1
This contrast preparation example is used for explanation reference storage medium material and preparation method thereof.
Method according to preparation example 4 prepares storage medium material, and different is that the method does not comprise the step that forms graphite linings, and is specific as follows:
Be that 0.3 millimeter, surface were immersed in acetone, ethanol and the deionized water each ultrasonic cleaning 10 minutes successively for the smooth silicon chip of nanoscale with thickness, wherein, ultrasonic frequency is 20KHz, and ultrasonic power is 800W.Be that the acetone soln of the polystyrene (Young modulus is 3GPa) of 1 volume % is spin-coated in the treated substrate with concentration, the rotating speed of spin coating is 800rpm, and 150 ℃ lower dry 15 minutes, obtain thickness and be 0.05 micron polymeric layer, obtain storage medium material DC1.
Embodiment 1
This embodiment is used for illustrating the method for data storage provided by the invention.
The used probe of this embodiment is single crystal silicon material probe (the needle point tip radius is 20 nanometers, available from Brooker (Bruker) company), the storage medium material C1 of storage medium material for being obtained by preparation example 1.
(1) exert pressure the determining of scope:
Probe is connected on the controlled piezoelectric ceramic tube of movement, slowly press down with storage medium material and contact, probe continue to be depressed into so that graphite linings when breaking used pressure be 2 little oxen, thereby can determine the applied pressure scope for greater than 0 to less than 2 little oxen.
(2) data storage:
Under the pressure of 0.7 little ox, adopt probe engraving data on a new storage medium material, the result who obtains as shown in Figure 3, storage density is 0.2Tbit/inch 2As can be seen from Figure 3, the quality of the data that employing the method obtains is fine, density is higher, and does not have turning up of polymkeric substance.
Embodiment 2
This embodiment is used for illustrating the method for data storage provided by the invention.
The used probe of this embodiment is single crystal silicon material probe (the needle point tip radius is 5 nanometers, available from Brooker (Bruker) company), the storage medium material C2 of storage medium material for being obtained by preparation example 2.
(1) exert pressure the determining of scope:
Probe is connected on the controlled piezoelectric ceramic tube of movement, slowly press down with storage medium material and contact, probe continue to be depressed into so that graphite linings when breaking used pressure be 0.5 little ox, thereby can determine the applied pressure scope for greater than 0 to less than 0.5 little ox.
(2) data storage:
Under the pressure of 0.33 little ox, adopt probe engraving data on a new storage medium material, the data storage density that obtains is 0.8Tbit/inch 2, quality is fine, density is higher, does not have turning up of polymkeric substance.
Embodiment 3
This embodiment is used for illustrating the method for data storage provided by the invention.
The used probe of this embodiment is single crystal silicon material probe (the needle point tip radius is 100 nanometers, available from Brooker (Bruker) company), the storage medium material C3 of storage medium material for being obtained by preparation example 3.
(1) exert pressure the determining of scope:
Probe is connected on the controlled piezoelectric ceramic tube of movement, slowly press down with storage medium material and contact, probe continue to be depressed into so that graphite linings when breaking used pressure be 10 little oxen, thereby can determine the applied pressure scope for greater than 0 to less than 10 little oxen.
(2) data storage:
Under the pressure of 5 little oxen, adopt probe engraving data on a new storage medium material, the data storage density that obtains is 0.04Tbit/inch 2, quality is fine, density is higher, does not have turning up of polymkeric substance.
Embodiment 4
This embodiment is used for illustrating the method for data storage provided by the invention.
The used probe of this embodiment is single crystal silicon material probe (the needle point tip radius is 20 nanometers, available from Brooker (Bruker) company), the storage medium material C4 of storage medium material for being obtained by preparation example 4.
(1) exert pressure the determining of scope:
Probe is connected on the controlled piezoelectric ceramic tube of movement, slowly press down with storage medium material and contact, probe continue to be depressed into so that graphite linings when breaking used pressure be 20 little oxen, thereby can determine the applied pressure scope for greater than 0 to less than 20 little oxen.
(2) data storage:
Under the pressure of 6.7 little oxen, adopt probe engraving data on a new storage medium material, the result who obtains is shown in Fig. 4 right half part, and storage density is 0.06Tbit/inch 2As can be seen from Figure 4, the quality of the data that employing the method obtains is fine, density is higher, and does not have turning up of polymkeric substance.
Embodiment 5
This embodiment is used for illustrating the method for data storage provided by the invention.
Carry out data storages according to the method for embodiment 4, different is, the single crystal silicon material probe substitutes with the identical silit probe of needle point tip radius, and the data storage density that obtains is 0.01Tbit/inch 2, quality better, density is higher, do not have turning up of polymkeric substance.
Comparative Examples 1
This Comparative Examples is used for the method for explanation reference data storage.
Carry out data storages according to the method for embodiment 4, different is, described storage medium material uses the storage medium material DC1 that is obtained by contrast preparation example 1 to substitute, and the result who obtains is shown in Fig. 4 left-half, and storage density is 0.0008Tbit/inch 2As can be seen from Figure 4, adopt data that the method obtains second-rate, density is lower, and has turning up of polymkeric substance.
Can find out that from the above results because embodiment 1-5 adopts storage medium material provided by the invention to carry out the data storage, therefore, the quality of the data that obtain, storage density all are higher than Comparative Examples 1, and do not have turning up of polymkeric substance, effect is very good.Can find out with the contrast of embodiment 5 from embodiment 4, adopt the preferred single crystal silicon material probe of the present invention can access the data that storage density is larger, quality is higher.

Claims (10)

1. a storage medium material is characterized in that, this storage medium material comprises substrate, polymeric layer and the graphite linings that stacks gradually, and the thickness of described graphite linings is not more than 10 nanometers.
2. storage medium material according to claim 1, wherein, the thickness of described graphite linings is the 0.35-2 nanometer.
3. storage medium material according to claim 1 and 2, wherein, the thickness of described substrate is the 0.3-1 millimeter; Preferably, described substrate is one or more in silicon chip, nitrogenize silicon chip, metallic film and the plastic sheeting.
4. storage medium material according to claim 1 and 2, wherein, the thickness of described polymeric layer is the 0.05-1 micron; Preferably, the Young modulus of the polymkeric substance in the described polymeric layer is 1-5GPa; More preferably, described polymkeric substance is selected from one or more in polystyrene, polymethylmethacrylate, polyethyl methacrylate, polymethyl acrylate, polyethyl acrylate, polypropylene and the polyethylene terephthalate.
5. the preparation method of the storage medium material described in the claim 1, the method is included in and forms successively polymeric layer and graphite linings in the substrate, and the thickness of described graphite linings is not more than 10 nanometers.
6. preparation method according to claim 5, wherein, the method that forms polymeric layer comprises that the solution that will contain polymkeric substance is coated in the substrate and is dry; Preferably, the consumption of described polymkeric substance is so that the thickness of polymeric layer is the 0.05-1 micron; Preferably, the Young modulus of described polymkeric substance is 1-5GPa; More preferably, described polymkeric substance is selected from one or more in polystyrene, polymethylmethacrylate, polyethyl methacrylate, polymethyl acrylate, polyethyl acrylate, polypropylene and the polyethylene terephthalate.
7. according to claim 5 or 6 described preparation methods, wherein, the method that forms graphite linings is the micromechanics stripping method; Preferably, described micromechanics stripping method is for adopting the evenly sticking powdered graphite of getting of adhesive tape, and the side and the polymeric layer that are stained with powdered graphite of this adhesive tape fitted tightly, remove adhesive tape, the consumption of described powdered graphite is so that form the graphite linings that thickness is not more than 10 nanometers at polymeric layer; Be preferably formed the graphite linings that thickness is the 0.35-2 nanometer.
8. preparation method according to claim 7, wherein, with respect to 1m 2Adhesive tape, the consumption of described powdered graphite is 5-20mg, is preferably 5-10mg; More preferably, the particle diameter of described powdered graphite is the 1-3 millimeter.
9. data storage method, the method comprise adopt probe with data carving in claim 1-4 on the described storage medium material of any one.
10. method according to claim 9, wherein, described probe is the single crystal silicon material probe.
CN201210133753.0A 2012-04-28 2012-04-28 The storage means of a kind of storage medium material and preparation method thereof and data Expired - Fee Related CN103377698B (en)

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