CN103368059B - Based on reflection-type saturable absorber and the preparation method of Graphene - Google Patents
Based on reflection-type saturable absorber and the preparation method of Graphene Download PDFInfo
- Publication number
- CN103368059B CN103368059B CN201310312516.5A CN201310312516A CN103368059B CN 103368059 B CN103368059 B CN 103368059B CN 201310312516 A CN201310312516 A CN 201310312516A CN 103368059 B CN103368059 B CN 103368059B
- Authority
- CN
- China
- Prior art keywords
- graphene
- saturable absorber
- reflection
- reflectance coating
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention discloses a kind of brand-new reflection-type saturable absorber based on Graphene and preparation method.The saturable absorber that the present invention obtains comprises saturable absorption layer, reflective coating, basalis.Preparation method is as follows: be grown on gold-plated film on the graphene film on Copper Foil, and be inverted and make golden film down, bond with the silicon base of the gold-plated film of upper surface, smooth fiber end face and Graphene flat contact, and optical fiber and saturable absorber are fixed and is packaged together.Graphene has saturation intensity low, supper-fast recovery time as saturable absorber, modulation depth is adjustable, the advantage such as irrelevant and low cost with wavelength, in conjunction with structural advantage specific to this reflection-type saturable absorber, achieve a kind of practical, simple efficient, stable work in work, light injury threshold is high, and is convenient to the novel saturable absorber of large-scale production.
Description
Technical field
The present invention relates to laser optic, particularly relate to a kind of reflection-type saturable absorber and preparation method.
Background technology
Ultrashort pulse has important application in fields such as optical fiber communication, ultra-fast optical, Fibre Optical Sensor, industrial processes, optical information processing, laser guidance, medical treatment, inertial confinement fast ignitions, causes the extensive research of people in recent years.Saturable absorber is that laser with active-passive lock mould is used for one of common method realizing ultrashort pulse.Saturable absorber realizes the fundamental mechanism of locked mode: when light pulse is by this absorber, the loss of its limit alar part is greater than the loss of middle body, and its intensity is enough to make absorber saturated, and result light pulse is narrowed in the process passing through absorber.
Current saturable absorber mainly contains: dyestuff, colour centre crystal, semiconductor saturable absorbing mirror (SESAM), Single Walled Carbon Nanotube (SWCNT) etc., but has respective defect separately.Dyestuff and colour centre crystal are usually used in solid state laser, are difficult to apply in optical fiber mode locked laser.Semiconductor saturable absorbing mirror on Bragg mirror, grows layer of semiconductor saturated absorbing body obtain.Although this saturable absorber is the most frequently used at present, but the growth conditions of its operation wavelength, modulation depth, saturation intensity and semi-conducting material and material, thickness etc. have relation, complex manufacturing technology, operating wavelength range is narrow, and modulation depth is difficult to adjustment.Single Walled Carbon Nanotube absorbs optical wavelength and is determined by caliber and chirality, comprises metal type pipe and semi-conductor type pipe, and not easily disperses, be unfavorable for preparing saturable absorber.
The discovery of Graphene in 2004, for people bring the new material as saturable absorber, not only there is absorption intensity low, supper-fast recovery time, modulation depth is adjustable, and due to distinctive zero band gap feature, saturated absorption characteristic and wavelength have nothing to do, these good feature supplements deficiency of above-mentioned several saturable absorber material.
But, now the existing saturable absorption body structure based on Graphene mainly contain be attached to fiber end face, be attached to side cut open polishing fine, be attached to tapered fiber cone district three kinds.
Find by literature search, Atomic-LayerGrapheneasaSaturableAbsorberforUltrafastPuls edLasers, Q.Bao, H.Zhang, Y.Wang, Z.Ni, Y.Yan, Z.X.Shen, K.P.Loh, andD.Y.Tang, Adv.Funct.Mater.19, 3077 (2009) .(single-layer graphenes realize ultrashort pulse as saturable absorber, Q.Bao, H.Zhang, Y.Wang, Z.Ni, Y.Yan, Z.X.Shen, K.P.Loh, andD.Y.Tang, advanced function material, 19th volume, 19 phases, 3077th page, 2009) literary composition describes first and single-layer graphene is attached to fiber end face as saturable absorber to realize the mode locking pulse of communication band 756fs.Graphenemode-lockersforfiberlasersfunctionedwithevanesce ntfieldinteraction, Y.W.Song, S.Y.Jang, W.S.Han, andM.K.Bae, Appl.Phys.Lett.96, 051122 (2010) (mode-locked laser of Graphene and evanescent field effect, Y.W.Song, S.Y.Jang, W.S.Han, andM.K.Bae, Applied Physics bulletin, 96th volume, 5th phase, Chapter 11, 22nd section, 2010) literary composition describe a kind of graphene suspension be spin-coated on side cut open polishing fibre in as laser with active-passive lock mould saturable absorber to realize locked mode.Evanescent-LightDepositionofGrapheneOntoTaperedFibersfor PassiveQ-SwitchandMode-Locker, J.Wang, Z.Luo, M.Zhou, C.Ye, H.Fu, Z.Cai, H.Cheng, H.Xu, andW.Qi, IEEEPhoton.J.4 (5), (tapered fiber evanescent field light deposition Graphene is used for passive Q-switch and locked mode to 1295 – 1305 (2012), J.Wang, Z.Luo, M.Zhou, C.Ye, H.Fu, Z.Cai, H.Cheng, H.Xu, andW.Qi, photonic propulsion magazine, 4th volume the 5th phase, 1295-1305 page, 2012) describe utilize graphene polymer drop Graphene is attached to tapered fiber cone district as saturable absorber, and achieve locked mode.
But these three kinds also all have respective shortcoming: be attached to fiber end face type, graphene film often removes PMMA(polymethyl methacrylate) difficulty, the existence of PMMA just limits the intensity of light field, because high distribution of light intensity easily damages be attached with PMMA graphene film, in addition, this structure also has easy breakage, graphene film and easily to come off and can not the significant shortcoming such as large-scale production.Be attached to side cut open polishing fine be difficult to equally remove PMMA, the saturable absorption of its Graphene can be affected.The Graphene being attached to tapered fiber cone district is attached to cone district confusedly, and lack of homogeneity, can strengthen the scattering of light, and easily causes energy accumulating a bit to burn out optical fiber at certain when power is larger.
Therefore, those skilled in the art is devoted to develop a kind of Graphene saturable absorber of not simple containing PMMA and structure, stable performance.
Summary of the invention
Because the above-mentioned defect of prior art, technical problem to be solved by this invention is to provide a kind of not containing PMMA and structure is simple, the Graphene saturable absorber of stable performance.
For achieving the above object, the invention provides a kind of reflection-type saturable absorber based on Graphene, concrete technical scheme is:
Based on the reflection-type saturable absorber of Graphene, comprise saturable absorption layer, reflective coating, basalis;
Described saturable absorption layer, described reflective coating, described basalis three laminating integrator, described reflective coating is between described saturable absorption layer and described basalis.
Preferably, described saturable absorption layer is the one among Graphene, graphene oxide or functionalized graphite's alkene.Saturable absorption layer is the topmost part of reflection-type saturable absorber based on Graphene, and laser beam is narrowed in the process passing through saturable absorption layer.
Preferably, described reflective coating is the one among golden film, silverskin, copper film or aluminium film, and other also can be adopted to have the material of highly reflective to light.Gold film, silverskin, copper film, aluminium film or other effects light to the material of highly reflective be, makes incident laser reflection on it, make laser again by Graphene, enhance the saturable absorption effect of Graphene to laser.
Preferably, described basalis is the one among silicon or silicon dioxide, also can adopt that other forms are fixed, the bulk material of stable chemical nature, plays the effect of carrying reflective coating and saturable absorption layer.
Present invention also offers the preparation method of the reflection-type saturable absorber based on Graphene, it is characterized in that, comprise the steps:
(1) growing graphene on Copper Foil;
(2) plate the first reflectance coating at described graphenic surface, obtain the Graphene of plating first reflectance coating;
(3) plate the second reflectance coating at upper surface of substrate, obtain the substrate of plating second reflectance coating;
(4) Graphene plating the first reflectance coating described in step (2) is inverted, makes described first reflectance coating down and combine with suprabasil described second reflectance coating plating the second reflectance coating described in step (3);
(5) described Copper Foil is eroded, expose described Graphene.
Preferably, described first reflectance coating is identical with described second reflective film material, is selected from the one among golden film, silverskin, copper film, aluminium film.
Preferably, described substrate is selected from the one among silicon or silicon dioxide.
Preferably, with evaporation coating method described first reflectance coating of plating and described second reflectance coating.Evaporated device is simple, technical maturity, can obtain uniform reflective coating.
Preferably, on described Graphene, described first reflectance coating described second reflectance coating optical cement or ultraviolet glue in described substrate is combined, and the first reflectance coating and the second reflectance coating is closely fit together, becomes reflective coating.
Preferably, utilize ferric chloride solution to etch away described Copper Foil, Graphene is revealed completely.
In better embodiment of the present invention, select golden film as reflectance coating, silicon, as substrate, has obtained the reflection-type saturable absorber based on Graphene.
In another better embodiment of the present invention, select silverskin as reflectance coating, silicon dioxide, as substrate, has obtained the reflection-type saturable absorber based on Graphene.
Compared with prior art, the invention has the beneficial effects as follows:
(1) based on reflection type structure, can be applicable to linear cavity mode-locked laser;
(2) there is not the problem removing PMMA, Graphene can keep complete chemical constitution;
(3) not high containing impurity light injury thresholds such as PMMA;
(4) single-layer graphene uniform fold, stable performance, simply efficiently;
(5) by the mode of plated film by absorption stable for Graphene on the reflecting film, difficult drop-off;
(6) large-scale production is convenient to.
Be described further below with reference to the technique effect of accompanying drawing to design of the present invention, concrete structure and generation, to understand object of the present invention, characteristic sum effect fully.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the reflection-type saturable absorber of a preferred embodiment of the present invention;
Fig. 2 is the preparation flow figure of the reflection-type saturable absorber of a preferred embodiment of the present invention.
Embodiment
Embodiment one
Reflection-type saturable absorber based on Graphene and preparation method is introduced in detail below in conjunction with Fig. 2.Fig. 2 comprises: the contact-making surface 7 of Copper Foil 1, Graphene 2, first gold medal film 3, silicon base 4, second gold medal film 5, optical fiber 6, optical fiber and Graphene.
Based on the reflection-type saturable absorption preparation of Graphene, comprise the following steps:
Adopt chemical vapor deposition (CVD) method growing graphene 2 on Copper Foil 1.First Copper Foil 1 is put into quartz ampoule, temperature rises to 800 ~ 1100 DEG C, pass into the hydrogen annealing 5 ~ 30 minutes of 10 ~ 200sccm afterwards, then pass into one or both gases in methane, acetylene, gas flow 10 ~ 300sccm, after Graphene 2 grows 5 ~ 60 minutes, close carbon-source gas fast cooling under an atmosphere of hydrogen.The first gold medal film 3 of thickness about 200nm on the Graphene 2 upper surface evaporation grown.Be millimetre-sized silicon base 4 plates the second gold medal film 5 close with the first gold medal film 3 thickness at thickness.Make Copper Foil 1 upward, the first gold medal film 3 is placed down, and the first gold medal film 3 and the second gold medal film 5 are bonded together by the method for optical cement, makes the first gold medal film 3 and the second gold medal film 5 become overall, i.e. so-called reflective coating.The ferric chloride solution of 0.5mol/L is utilized to erode Copper Foil 1, and rinsing Graphene 2 outer surface in deionized water, remove impurity as far as possible.Prepared by the reflection-type saturable absorber based on Graphene.
Silicon base shape is fixed, stable chemical performance, can carry well and fix golden film; Gold film to optical fiber, there is very strong albedo, laser beam transparent Graphene is mapped on golden film, golden film by after laser beam reflection again through Graphene; Graphene serves the effect of twice saturated absorption, and laser beam is narrowed further.
The reflection-type saturable absorber based on Graphene prepared by this kind of method, compared with common saturable absorber, has the following advantages: not containing impurity such as PMMA; By the mode of plated film by absorption stable for Graphene difficult drop-off on the reflecting film, graphene uniform covers, stable performance; Be provided with reflective coating dexterously, by the reflection of reflectance coating to light, enhance the effect of Graphene saturable absorption.
The end face of optical fiber 6 of drawing tail optical fiber polishes flat, and evenness is in nm magnitude, and by face-to-face to the flat end face of optical fiber 6 and Graphene 2 flat contact, clearance control, at below 1um, increases coupling efficiency when golden film reverberation enters fibre as far as possible.Finally the position of tail optical fiber and saturable absorber is fixed, and be packaged together.Saturable absorber prepared by the present embodiment, based on reflection type structure, can be applicable to linear cavity mode-locked laser.
Embodiment two
Adopt chemical vapor deposition (CVD) method growing graphene on Copper Foil.First Copper Foil is put into quartz ampoule, temperature rises to 800 ~ 1100 DEG C, pass into the hydrogen annealing 5 ~ 30 minutes of 10 ~ 200sccm afterwards, then pass into one or both gases in methane, acetylene, gas flow 10 ~ 300sccm, graphene growth, after 5 ~ 60 minutes, closes carbon-source gas fast cooling under an atmosphere of hydrogen.First silverskin of thickness about 200nm is plated at the Graphene upper surface grown.Be millimetre-sized silicon dioxide substrate plates second silverskin close with the first silver film thickness at thickness.Make Copper Foil upward, the first silverskin is placed down, and the first silverskin and the second silverskin are bonded together by the method for ultraviolet glue, makes the first silverskin and the second silverskin become overall, i.e. so-called reflective coating.The ferric chloride solution of 0.5mol/L is utilized to erode Copper Foil, and rinsing Graphene outer surface in deionized water, remove impurity as far as possible.Prepared by the reflection-type saturable absorber based on Graphene.
More than describe preferred embodiment of the present invention in detail.Should be appreciated that the ordinary skill of this area just design according to the present invention can make many modifications and variations without the need to creative work.Therefore, all technical staff in the art, all should by the determined protection range of claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (7)
1., based on the preparation method of the reflection-type saturable absorber of Graphene, it is characterized in that, comprise the steps:
(1) growing graphene on Copper Foil;
(2) plate the first reflectance coating at described graphenic surface, obtain the Graphene of plating first reflectance coating;
(3) plate the second reflectance coating at upper surface of substrate, obtain the substrate of plating second reflectance coating;
(4) Graphene plating the first reflectance coating described in step (2) is inverted, makes described first reflectance coating down and combine with suprabasil described second reflectance coating plating the second reflectance coating described in step (3);
(5) described Copper Foil is eroded, expose described Graphene.
2., as claimed in claim 1 based on the preparation method of the reflection-type saturable absorber of Graphene, it is characterized in that, described first reflectance coating is identical with described second reflective film material, is selected from the one among golden film, silverskin, copper film, aluminium film.
3., as claimed in claim 1 based on the preparation method of the reflection-type saturable absorber of Graphene, it is characterized in that, described substrate is selected from the one among silicon or silicon dioxide.
4. as claimed in claim 1 based on the preparation method of the reflection-type saturable absorber of Graphene, it is characterized in that, with evaporation coating method described first reflectance coating of plating and described second reflectance coating.
5. as claimed in claim 1 based on the preparation method of the reflection-type saturable absorber of Graphene, it is characterized in that, on described Graphene, in described first reflectance coating and described substrate, described second reflectance coating uses up cementing conjunction.
6., as claimed in claim 5 based on the preparation method of the reflection-type saturable absorber of Graphene, it is characterized in that, described optical cement is ultraviolet glue.
7., as claimed in claim 1 based on the preparation method of the reflection-type saturable absorber of Graphene, it is characterized in that, utilize ferric chloride solution to etch away described Copper Foil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310312516.5A CN103368059B (en) | 2013-07-23 | 2013-07-23 | Based on reflection-type saturable absorber and the preparation method of Graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310312516.5A CN103368059B (en) | 2013-07-23 | 2013-07-23 | Based on reflection-type saturable absorber and the preparation method of Graphene |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103368059A CN103368059A (en) | 2013-10-23 |
| CN103368059B true CN103368059B (en) | 2016-04-06 |
Family
ID=49368862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310312516.5A Expired - Fee Related CN103368059B (en) | 2013-07-23 | 2013-07-23 | Based on reflection-type saturable absorber and the preparation method of Graphene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103368059B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904544B (en) * | 2013-11-15 | 2017-02-08 | 南通蓝诺光电科技有限公司 | Two-dimensional stratified material saturable absorber device and manufacturing method thereof |
| CN105337153A (en) * | 2015-11-27 | 2016-02-17 | 中国科学院西安光学精密机械研究所 | Method for manufacturing saturable absorber device on basis of evanescent wave mode locking |
| CN106226970B (en) * | 2016-08-09 | 2019-04-16 | 深圳大学 | A kind of full photo threshold device and its preparation method and application based on two-dimensional material wavelength convert function |
| CN110911958A (en) * | 2019-11-25 | 2020-03-24 | 上海交通大学 | Silicon-based passive mode-locked external cavity laser based on two-dimensional material saturable absorber |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102545022A (en) * | 2012-01-20 | 2012-07-04 | 上海交通大学 | Saturable absorption mirror of wide band graphene |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103477448B (en) * | 2011-03-29 | 2016-11-09 | 加州理工学院 | Many knot flexible solar batteries based on Graphene |
-
2013
- 2013-07-23 CN CN201310312516.5A patent/CN103368059B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102545022A (en) * | 2012-01-20 | 2012-07-04 | 上海交通大学 | Saturable absorption mirror of wide band graphene |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103368059A (en) | 2013-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liu et al. | Single crystal growth of millimeter-sized monoisotopic hexagonal boron nitride | |
| Wu et al. | Graphene oxide for integrated photonics and flat optics | |
| CN103368059B (en) | Based on reflection-type saturable absorber and the preparation method of Graphene | |
| Chen et al. | Preparation of carbon nanoparticles with strong optical limiting properties by laser ablation in water | |
| Fu et al. | Resonantly enhanced optical nonlinearity in hybrid semiconductor quantum dot–metal nanoparticle structures | |
| Lu et al. | Charge transfer in graphene/WS2 enhancing the saturable absorption in mixed heterostructure films | |
| CN103368058B (en) | A kind of saturable absorbing mirror based on Graphene and manufacture method | |
| Li et al. | Self-assembly of carbon Black/AAO templates on nanoporous Si for broadband infrared absorption | |
| CN102718180A (en) | Concentric ring core nano silicon micro-disk micro-cavity device and preparation method thereof | |
| Liu et al. | Suspended MoS2 photodetector using patterned sapphire substrate | |
| Liu et al. | Nonlinear optical properties of anisotropic two-dimensional layered materials for ultrafast photonics | |
| Li et al. | Light–matter interaction of 2D materials: Physics and device applications | |
| Zakharko et al. | Plasmon-enhanced nonlinear optical properties of SiC nanoparticles | |
| Zhao et al. | Lead‐free chiral 2D double perovskite microwire arrays for circularly polarized light detection | |
| Li et al. | Q-switched all-fiber laser with short pulse duration based on tungsten diselenide | |
| Konov | Carbon photonics | |
| Lee et al. | Exciton dynamics in two-dimensional Mo S 2 on a hyperbolic metamaterial-based nanophotonic platform | |
| Wang et al. | 2D transition metal carbides (MXenes) for third order nonlinear optics: status and prospects | |
| El Jouad et al. | Roughness effect on photoluminescence of cerium doped zinc oxide thin films | |
| WO2016054803A1 (en) | Method for generating vortex light beam, and vortex light beam device and preparation method thereof | |
| CN104242053A (en) | Implementation and enhancement method for ZnO single-mode ultraviolet lasers | |
| Hussain et al. | Plasma textured glass surface morphologies for amorphous silicon thin film solar cells-a review | |
| Li et al. | Q-switched ytterbium fiber laser based on rhenium diselenide as a saturable absorber | |
| Wang et al. | Light management with grating structures in optoelectronic devices | |
| CN109856821A (en) | Terahertz wave modulator and preparation method based on flexible bismuth nano-pillar/graphene |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160406 Termination date: 20210723 |