CN103368044A - Synchronous double-frequency pulse microchip laser based on temperature control mechanism - Google Patents

Synchronous double-frequency pulse microchip laser based on temperature control mechanism Download PDF

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CN103368044A
CN103368044A CN201310299903XA CN201310299903A CN103368044A CN 103368044 A CN103368044 A CN 103368044A CN 201310299903X A CN201310299903X A CN 201310299903XA CN 201310299903 A CN201310299903 A CN 201310299903A CN 103368044 A CN103368044 A CN 103368044A
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laser
frequency
double
pulse
microchip
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胡淼
张慧
张飞
刘晨曦
徐国蕊
黄前锋
邓晶
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Hangzhou Dianzi University
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Hangzhou Dianzi University
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Abstract

The invention relates to a synchronous double-frequency pulse microchip laser based on a temperature control mechanism. The synchronous double-frequency pulse microchip laser comprises a double-frequency laser generating device and a synchronous double-frequency laser pulse output device, wherein the double-frequency laser generating device comprises a pumping source of the microchip laser, a transmission optical fiber, a self-focusing lens, a microchip gain medium and a semiconductor temperature controller, and the synchronous double-frequency laser pulse output device comprises a filter, a polarization beam splitter, a digital oscilloscope, a collimator, a coupler, an RF analyzer and a spectrum analyzer. Pre-pumping is adopted, temperatures of the heat sink of the pumping source and the heat sink of the microchip gain medium are controlled, a gain spectral line is moved, laser oscillation wavelength is changed, and accordingly the relative gain of a double-frequency laser pulse is adjusted so as to adjust the light transmitting time of the laser pulse and acquire synchronous double-frequency laser pulse output. The synchronous double-frequency laser pulse acquired through the synchronous double-frequency pulse microchip laser lays the foundation for the next step that optical generation of millimeter waves is applied to radio over fiber (ROF).

Description

Synchronous double-frequency pulse microchip laser apparatus based on temperature control mechanism
Technical field
The invention belongs to the Microwave photonics field, specifically based on the synchronous double-frequency pulse microchip laser apparatus of temperature control mechanism.
Background technology
Along with the development of multimedia mobile communication and fixed network broadband wireless access, the user has proposed more and more higher requirement to the bandwidth of wireless communication system.Be widely used at wireless communication system under the background of a decimeter frequency range (300MHz-3GHz) microwave communication, the channel that frequency is higher becomes demand gradually, such as centimeter wave frequency range (3GHz-30GHz) and millimeter wave frequency band (30GHz-300GHz).Millimetre wavelength is at 1mm-10mm, and its frequency spectrum is positioned at microwave and far infrared wave is thought overlapping scope, has advantages of two kinds of wave spectrums, and is strong such as bandwidth, good directionality, antijamming capability.At present, millimeter wave has great value in the military and civilian field, has obtained at aspects such as radar, communication, electronic countermeasures, remote sensing and radiation meters embodying widely; Therefore and the wider millimeter wave of band bandwidth is subjected to the impact of atmosphere more serious, is not suitable for long-distance transmissions, optical fiber communication and radio communication fusion is obtained the light carrier radio communication Radio over fiber(ROF of large band bandwidth) technology arises at the historic moment.The ROF technology merges Fibre Optical Communication Technology and millimetre-wave attenuator technology, both can effectively solve the short problem of millimeter wave transmission range in atmosphere, can realize the broadband of radio communication again.
Wherein Optical Generation of Millimeter Wave Signals is also paid close attention to more and more widely as a key technology of ROF system, the method of Optical Generation of Millimeter Wave Signals mainly contains light heterodyne method, optical sccond-harmonic generation method and based on the method for modulation, wherein light heterodyne method is higher to the requirement of two row coherenceof lights, so the main double frequency micro-slice laser light heterodyne method beat frequency that adopts produces millimeter wave at present.The double frequency micro-slice laser refers to can produce simultaneously the laser of the Laser output of two kinds of different frequencies in a laserresonator, its cavity length is generally all in the millimeter magnitude, the light beam of double frequency micro-slice laser output easily produces the millimeter-wave signal of low phase noise, hundred GHz from beat frequency; Typical double frequency microchip laser structure is to form integrated micro resonant cavity at the direct plated film in gain media two ends, has advantages of that Stability Analysis of Structures, good beam quality, frequency difference are large.Time synchronized and coherence's requirement to the double-frequency laser pulse in the photoproduction millimeter wave are higher, and apparatus of the present invention adopt a kind of novel method to realize synchronous intense adjustment of double-frequency laser burst length, for the photoproduction millimeter wave lays the first stone.
Summary of the invention
The object of the invention is to overcome deficiency of the prior art, a kind of synchronous double-frequency pulse microchip laser apparatus based on temperature control mechanism is provided, by adopting the pre-pumping of LD, laser pumping source and microplate gain media heat sink being carried out temperature control, to obtain the double-frequency laser pulse output of time synchronized, for next step photoproduction Millimeter Wave Applications lays the first stone in light carrier radio communication.
The present invention includes double-frequency laser generation device and synchronous double-frequency laser pulse output device.
Described double-frequency laser generation device comprises micro-slice laser pumping source, Transmission Fibers, GRIN Lens, microplate gain media and semiconductor temperature-control.The laser of micro-slice laser pumping source output converges to the GRIN Lens center through Transmission Fibers, then incides in the microplate gain media.
The micro-slice laser pumping source comprises 808nm laser and pulse signal modulation source, makes it possible to export simultaneously in a Transmission Fibers direct current pumping light and pulse pumping light.By changing the pre-pumping parameter (direct current pumping current, pulse pumping electric current, pump pulse pulsewidth, pump pulse repetition rate) of micro-slice laser pumping source, can obtain the controlled pulse laser sequence of repetition rate in the implementation.
Transmission Fibers adopts the less multimode fiber of insertion loss; The microplate gain media adopts anisotropic double frequency microchip crystal, at front end face and the rear end face difference plated film of crystal; Semiconductor temperature-control is used for the temperature of micro-slice laser pumping source and microplate gain media is regulated.
Described synchronous double-frequency laser pulse output device comprises filter plate, beam splitter, polarization beam splitter, digital oscilloscope, collimater, coupler, RF (radio frequency) analyzer and spectrum analyzer; Filter plate wherein is used for selecting required specific wavelength; Beam splitter is used for laser is divided into two light paths; Polarization beam splitter is used for making two zlasing modes of cross-polarization to separate; Digital oscilloscope is used for double-frequency laser pulse alignment situation (according to the size of pumping current, the double-frequency laser pulse generally has the time difference of microsecond magnitude in time) in pump pulse of observation; The light that collimater is used for exporting becomes directional light, makes the coupler that enters of light maximal efficiency; Coupler is used for realizing the shunt of light signal; Radio frequency (RF) analyzer and spectrum analyzer are used for the spectral characteristic of observation double-frequency laser pulse.
Described Transmission Fibers center, GRIN Lens, gain media center are on the same optical axis.
In the pumping process by micro-slice laser pumping source and microplate gain media heat sink being carried out temperature control, adjust gain spectrum and the oscillating laser wavelength of double-frequency laser pulse, and then the bright dipping time of adjusting the double-frequency laser pulse synchronize them and obtain the output of synchronous double-frequency laser pulse, and observe the spectral characteristic of double-frequency laser burst length after synchronously.
Beneficial effect of the present invention: the project organization of whole device is fairly simple, comparison is easy, by adjusting pre-pumping parameter, laser pulse can be limited in the corresponding pump pulse time range.By further micro-slice laser pumping source and microplate gain media heat sink being carried out temperature control, mobile gain spectrum and oscillating laser wavelength are realized the double-frequency laser pulse output of time synchronized; Develop good stability in using, practical millimeter wave lays the foundation, and is a kind of synchronous double-frequency pulse microchip laser apparatus based on temperature control mechanism with larger application prospect.
Description of drawings
Fig. 1 is structural representation of the present invention.Among the figure, 1 is the micro-slice laser pumping source, and 2 is Transmission Fibers, 3 is GRIN Lens, and 4 is the microplate gain media, and 5 is semiconductor temperature-control, 6 is filter plate, 7 is beam splitter, and 8 is polarization beam splitter, and 9 is digital oscilloscope, 10 is collimater, 11 is coupler, and 12 is the RF analyzer, and 13 is spectrum analyzer.
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing.
As shown in Figure 1, the synchronous double-frequency pulse microchip laser apparatus based on temperature control mechanism comprises micro-slice laser pumping source 1, Transmission Fibers 2, GRIN Lens 3, microplate gain media 4, semiconductor temperature-control 5, filter plate 6, beam splitter 7, polarization beam splitter 8, digital oscilloscope 9, collimater 10, coupler 11, RF analyzer 12, spectrum analyzer 13.The double-frequency laser generation device comprises micro-slice laser pumping source, Transmission Fibers, GRIN Lens, microplate gain media and semiconductor temperature-control; Synchronous double-frequency laser pulse output device comprises filter plate, beam splitter, polarization beam splitter, digital oscilloscope, collimater, coupler, RF analyzer and spectrum analyzer.Described Transmission Fibers center, GRIN Lens, gain media center are on the same optical axis.Micro-slice laser pumping source in this device adopts 808nm laser and pulse signal modulation source, makes it possible to export simultaneously in a Transmission Fibers direct current pumping light and pulse pumping light; The microplate gain media adopts doping content to be 1%, to be of a size of
Figure 201310299903X100002DEST_PATH_IMAGE002
, refractive index is 1.96 Nd:YVO 4Crystal, and the front end face of crystal plating 1064nm total reflection film (
Figure 201310299903X100002DEST_PATH_IMAGE004
) and 808 nm anti-reflection films (
Figure 201310299903X100002DEST_PATH_IMAGE006
), rear end face plate 1064 nm high-reflecting films (
Figure 201310299903X100002DEST_PATH_IMAGE008
).The characteristics of this device are to control by semiconductor temperature-control the temperature of micro-slice laser pumping source and microplate gain media, gain spectrum and laser oscillation wavelength are drifted about, and then the relative gain of adjustment double-frequency laser pulse, finally obtain the double-frequency laser pulse output of time synchronized.
Described is 808nm laser and pulse signal modulation source based on micro-slice laser pumping source in the synchronous double-frequency pulse microchip laser apparatus of temperature control mechanism, maximum pump pulse power is 10W, emission wavelength is 808 nm, and the pumping optically coupled system adopts GRIN Lens, and coupling efficiency is 85%; Pumping light is 200 μ m through the GRIN Lens post-concentration to the spot radius at microplate gain media center.Microplate gain media optical direction both ends of the surface are the plane, the depth of parallelism less than , then cavity length is 0.9 mm, and micro-slice laser pumping source and microplate gain media are controlled variations in temperature by semiconductor temperature-control.The double-frequency laser pulse of output after filtration wave plate is divided into two light paths by beam splitter, one paths is by polarization beam splitter two zlasing modes of cross-polarization to be separated, accepted and be stored in the digital oscilloscope by photodiode (reaction time is less than 1ns) respectively, by digital oscilloscope monitoring laser pulse sync status; Another path is through fiber coupler, observes the spectral characteristic of double-frequency laser burst length after synchronously at RF analyzer and spectrum analyzer.
The course of work of the present invention: micro-slice laser pumping source output 808nm DC pulse pumping light is transferred to GRIN Lens through multimode fiber laser is focused on, to improve the conversion efficiency of laser; Through the laser of GRIN Lens enter front end face plate 1064 nm total reflection films (
Figure 497952DEST_PATH_IMAGE004
) and 808 nm anti-reflection films (
Figure 477409DEST_PATH_IMAGE006
), rear end face plate 1064 nm high-reflecting films ( ) the microplate gain media, the double-frequency laser of output is the unwanted wavelength light of wave plate filtering after filtration; Then be divided into two light paths by beam splitter, one paths separates two zlasing modes of cross-polarization by polarization beam splitter, accepted and be stored in the digital oscilloscope to observe the laser pulse sync status by photodiode (reaction time is less than 1ns) respectively, another paths enters at RF analyzer and spectrum analyzer to observe the double-frequency laser spectral characteristic through fiber coupler.At first adjust the pre-pumping parameter (direct current pumping current, pulse pumping electric current, pump pulse pulsewidth, pump pulse repetition rate) of pumping source in the course of work, obtain the controlled pulse laser sequence of repetition rate, after the double-frequency laser pulse is limited in corresponding pump pulse time range, adjust the temperature of micro-slice laser pumping source and microplate gain media by semiconductor temperature-control, gain spectrum and laser oscillation wavelength are drifted about, and then regulate the relative gain of double-frequency laser pulse with the bright dipping time of adjustment laser pulse; The final double-frequency laser pulse output that observes time synchronized in digital oscilloscope is observed the spectral characteristic of double-frequency laser burst length after synchronously at RF analyzer and spectrum analyzer simultaneously.

Claims (4)

1. based on the synchronous double-frequency pulse microchip laser apparatus of temperature control mechanism, comprise double-frequency laser generation device and synchronous double-frequency laser pulse output device, it is characterized in that:
Described double-frequency laser generation device comprises pumping source (1), Transmission Fibers (2), GRIN Lens (3), microplate gain media (4) and the semiconductor temperature-control (5) of micro-slice laser; Micro-slice laser pumping source output DC pulse pumping light, being transferred to GRIN Lens through Transmission Fibers focuses on laser, laser through GRIN Lens enters the microplate gain media, and semiconductor temperature-control is used for the temperature of micro-slice laser pumping source and microplate gain media is regulated;
Described synchronous double-frequency laser pulse output device comprises filter plate (6), beam splitter (7), polarization beam splitter (8), digital oscilloscope (9), collimater (10), coupler (11), RF analyzer (12) and spectrum analyzer (13); The double-frequency laser of microplate gain media output is the unwanted wavelength light of wave plate filtering after filtration; Then be divided into two light paths by beam splitter, one paths separates two zlasing modes of cross-polarization by polarization beam splitter, observing the laser pulse sync status, another paths enters RF analyzer and spectrum analyzer to observe the double-frequency laser spectral characteristic through collimater, fiber coupler in digital oscilloscope;
Described Transmission Fibers center, GRIN Lens, gain media center are on the same optical axis.
2. the synchronous double-frequency pulse microchip laser apparatus based on temperature control mechanism according to claim 1, it is characterized in that: described micro-slice laser pumping source comprises 808nm laser and pulse signal modulation source, makes it possible to export simultaneously in a tail optical fiber direct current pumping light and pulse pumping light.
3. the synchronous double-frequency pulse microchip laser apparatus based on temperature control mechanism according to claim 1 is characterized in that: described Transmission Fibers employing multimode fiber.
4. the synchronous double-frequency pulse microchip laser apparatus based on temperature control mechanism according to claim 1, it is characterized in that: described microplate gain media adopts anisotropic double frequency microchip crystal, at the front end face of crystal and rear end face plated film respectively.
CN201310299903XA 2013-07-17 2013-07-17 Synchronous double-frequency pulse microchip laser based on temperature control mechanism Pending CN103368044A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104143756A (en) * 2014-07-28 2014-11-12 奉化市宇创产品设计有限公司 Microchip laser of gain switch
CN105811235A (en) * 2014-12-29 2016-07-27 中国兵器装备研究院 Multi-spectral modulation module for fiber laser
CN107884060A (en) * 2017-10-27 2018-04-06 中国人民解放军国防科技大学 Optical fiber distributed sensing detection method and device
CN111049582A (en) * 2019-12-17 2020-04-21 北京无线电计量测试研究所 Microwave signal real-time synchronization device and method based on microwave photon technology

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203415811U (en) * 2013-07-17 2014-01-29 杭州电子科技大学 Synchronous double-frequency pulse microchip laser device based on temperature control mechanism

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203415811U (en) * 2013-07-17 2014-01-29 杭州电子科技大学 Synchronous double-frequency pulse microchip laser device based on temperature control mechanism

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
M HU,R D AN,H ZHANG,ET AL.: "experimental investigation of a novel microchip laser producing synchronized dual-frequency laser pulse with an 85Ghz interval", 《LASER PHYSICS LETTERS》, vol. 10, no. 1, 31 January 2013 (2013-01-31) *
唐拥攀,李齐良,胡淼: "LD脉冲泵浦的增益开关型Nd_YVO_4微片激光器的研究", 《光通信技术》, no. 7, 31 July 2011 (2011-07-31) *
胡淼,张慧,安汝德,等: "频差可变的双纵模双频微片激光器的研究", 《光电子·激光》, vol. 23, no. 12, 31 December 2012 (2012-12-31) *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104143756A (en) * 2014-07-28 2014-11-12 奉化市宇创产品设计有限公司 Microchip laser of gain switch
CN105811235A (en) * 2014-12-29 2016-07-27 中国兵器装备研究院 Multi-spectral modulation module for fiber laser
CN107884060A (en) * 2017-10-27 2018-04-06 中国人民解放军国防科技大学 Optical fiber distributed sensing detection method and device
CN111049582A (en) * 2019-12-17 2020-04-21 北京无线电计量测试研究所 Microwave signal real-time synchronization device and method based on microwave photon technology
CN111049582B (en) * 2019-12-17 2021-12-14 北京无线电计量测试研究所 Microwave signal real-time synchronization device and method based on microwave photon technology

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Application publication date: 20131023