CN103360793A - Low-dielectric constant filler and preparation technology thereof - Google Patents
Low-dielectric constant filler and preparation technology thereof Download PDFInfo
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- CN103360793A CN103360793A CN2012100840039A CN201210084003A CN103360793A CN 103360793 A CN103360793 A CN 103360793A CN 2012100840039 A CN2012100840039 A CN 2012100840039A CN 201210084003 A CN201210084003 A CN 201210084003A CN 103360793 A CN103360793 A CN 103360793A
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Abstract
The invention discloses a preparation method of a low-dielectric constant filler, which comprises the following steps of: (a) providing crystal quartz, and melting the crystal quartz in a high-temperature furnace to form a glassy-state substance; (b) preserving heat of the glassy-state substance; (c) cooling the glassy-state substance after the heat preservation; (d) performing ball-milling grinding and precise grading of the cooled glassy-state substance to obtain the filler. According to the method disclosed by the invention, by cooling, grinding and grading molten quartz, the filler with the low dielectric constant is prepared, the requirements of current high-frequency communication are satisfied perfectly, and the communication quality is guaranteed.
Description
Technical field
The present invention relates to a kind of filler, relate in particular to a kind of low-k filler that copper coated foil plate is made the field that is applied to.
Background technology
As everyone knows, adding inorganic powder at copper coated foil plate in resin glue is the common practice of copper coated foil plate industry, adds mechanical property, dimensional performance and electric property that functional filler can improve material behind the resin solidification.
Along with the development of advanced communication equipment and technology, be widely used in the demand of various high-frequency electronic equipment of communication field also in growth at full speed.For satisfying the transmission of high-frequency signal, the demand of high transmission speed and high-frequency low-consumption, the copper-clad plate base material of various low-ks is also in continuous development.The sheet material of low-k is made with cyanate ester, styrene-maleic anhydride, PPO/APPE, PTFE, PI or their mixture usually at present, and the filler that is combined with simultaneously low-k is produced.
Existing filler is by various inorganic materials, and the specific inductivity of this kind material is 6.5-7 under the 1MHZ condition usually, is 6.5-7 under the 1GHZ condition, and the specific inductivity of this moment is still higher, does not meet the requirement of high frequency communication.
Summary of the invention
One of purpose of the present invention is to provide a kind of low-k filler, and it has overcome the higher problem of filler specific inductivity used in the copper coated foil plate manufacturing field.
Another object of the present invention is to provide a kind of preparation method who prepares above-mentioned low-k filler.
One of for achieving the above object, the preparation method of the filler of a kind of low-k of the present invention, described method comprises the steps:
A., crystal quartz is provided, described crystal quartz is placed the High Temperature Furnaces Heating Apparatus melting, form glass state material;
B. with described glass state material insulation;
C. the glass state material through insulation is carried out cooling process;
D. will carry out ball mill pulverizing and fine grading through the glass state material of cooling process, obtain filler.
As a further improvement on the present invention, the temperature range of the melting among the described step a is: 1500 ℃ ~ 1750 ℃.
As a further improvement on the present invention, the scope of soaking time is among the described step b: 8h ~ 14h.
As a further improvement on the present invention, described preparation method also comprises: with coupling agent described filler is carried out surface treatment.
As a further improvement on the present invention, described coupling agent is silane.
One of for achieving the above object, a kind of low-k filler of the present invention, described filler comprises: mass percent is 99.5% silicon oxide.
As a further improvement on the present invention, the specific inductivity 1MHZ of described filler is 3.5 ~ 4.5.
As a further improvement on the present invention, the specific inductivity 1GHZ of described filler is 3.5 ~ 4.5.
As a further improvement on the present invention, the average particle size range of described filler is: 0 ~ 10 μ m.
As a further improvement on the present invention, the pure water of described filler dissolves the ion content scope and is: 0 ~ 100ppm.
Compared with prior art, the invention has the beneficial effects as follows: the present invention by the quartz to melting cool off, pulverizing and classification, thereby prepare a kind of filler with low-k, the requirement that it has well satisfied present high frequency communication has guaranteed the quality of communication.
Description of drawings
Fig. 1 is the schema of preparation method's one embodiment of the present invention.
Embodiment
The present invention is described in detail below in conjunction with each embodiment shown in the drawings; but should be noted that; these embodiments are not limitation of the present invention; those of ordinary skills all belong within protection scope of the present invention according to these embodiment institute work energy, method or structural equivalent transformation or alternative.
As shown in Figure 1, be the preparation method's of present embodiment schema, in the present embodiment, a kind of preparation method of filler of low-k, the method comprises the steps:
A., high-purity crystal quartz is provided, described crystal quartz is placed the High Temperature Furnaces Heating Apparatus melting, form glass state material.Above-mentioned high-purity crystal quartz comprises that massfraction is 99.5% silicon oxide.The temperature range of above-mentioned melting process is: 1500 ℃ ~ 1750 ℃.
B. treat that the melting process reaction is complete, make the glass state material insulation certain hour of formation, the scope of above-mentioned certain hour is: 8h ~ 14h.
C. the glass state material through insulation is carried out cooling process;
D. will carry out ball mill pulverizing and fine grading through the glass state material of cooling process, namely obtain the filler of described low-k.
Above-mentioned low-k filler is the aggregate of particle or particle.
Further, also available coupling agent carries out surface treatment to the filler in the steps d, and coupling agent can be silane.
The present invention will be described in detail below in conjunction with concrete embodiment.
Embodiment one
High-purity crystal quartz is provided, and wherein the mass percent of silicon oxide is 99.5%, with the melting in 1500 ℃ High Temperature Furnaces Heating Apparatus of above-mentioned quartz, forms glass state material, and insulation 10h.Treat that insulating process is complete, high temp glass attitude material is cooled off, then by ball mill pulverizing and fine grading, namely obtain the filler of low-k of the present invention.
The specific inductivity 1MHZ of above-mentioned filler is 3.5 ~ 4.5; 1GHZ is 3.5 ~ 4.5.
The average particle size range of filler is: 0 ~ 10 μ m, preferably, median size is take 2 ~ 3 μ m as good.
Further, the pure water of filler dissolves the ion content scope and is: 0 ~ 100ppm.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned example embodiment, and in the situation that do not deviate from spirit of the present invention or essential characteristic, can realize the present invention with other specific form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is limited by claims rather than above-mentioned explanation, therefore is intended to include in the present invention dropping on the implication that is equal to important document of claim and all changes in the scope.Any Reference numeral in the claim should be considered as limit related claim.
In addition, be to be understood that, although this specification sheets is described according to embodiment, but be not that each embodiment only comprises an independently technical scheme, this narrating mode of specification sheets only is for clarity sake, those skilled in the art should make specification sheets as a whole, and the technical scheme among each embodiment also can through appropriate combination, form other embodiments that it will be appreciated by those skilled in the art that.
Claims (10)
1. the preparation method of the filler of a low-k is characterized in that, described method comprises the steps:
A., crystal quartz is provided, described crystal quartz is placed the High Temperature Furnaces Heating Apparatus melting, form glass state material;
B. with described glass state material insulation;
C. the glass state material through insulation is carried out cooling process;
D. will carry out ball mill pulverizing and fine grading through the glass state material of cooling process, obtain filler.
2. preparation method according to claim 1, it is characterized in that: the temperature range of the melting among the described step a is: 1500 ℃ ~ 1750 ℃.
3. preparation method according to claim 1, it is characterized in that: the scope of soaking time is among the described step b: 8h ~ 14h.
4. preparation method according to claim 1 is characterized in that, described preparation method also comprises: with coupling agent described filler is carried out surface treatment.
5. preparation method according to claim 4, it is characterized in that: described coupling agent is silane.
6. a low-k filler that adopts each described preparation method's preparation of claim 1 ~ 5 is characterized in that, described filler comprises: mass percent is 99.5% silicon oxide.
7. filler according to claim 6, it is characterized in that: the specific inductivity 1MHZ of described filler is 3.5 ~ 4.5.
8. filler according to claim 6, it is characterized in that: the specific inductivity 1GHZ of described filler is 3.5 ~ 4.5.
9. filler according to claim 6, it is characterized in that: the average particle size range of described filler is: 0 ~ 10 μ m.
10. filler according to claim 6, it is characterized in that: the pure water of described filler dissolves the ion content scope and is: 0 ~ 100ppm.
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| CN2012100840039A CN103360793A (en) | 2012-03-27 | 2012-03-27 | Low-dielectric constant filler and preparation technology thereof |
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| CN2012100840039A CN103360793A (en) | 2012-03-27 | 2012-03-27 | Low-dielectric constant filler and preparation technology thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107652628A (en) * | 2017-09-22 | 2018-02-02 | 苏州海旭新材料科技有限公司 | Quartz glass filler, resin combination and copper-clad plate |
| CN115180806A (en) * | 2022-08-03 | 2022-10-14 | 南京高新经纬电气有限公司 | Glass state material manufacturing process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107652628A (en) * | 2017-09-22 | 2018-02-02 | 苏州海旭新材料科技有限公司 | Quartz glass filler, resin combination and copper-clad plate |
| CN112194877A (en) * | 2017-09-22 | 2021-01-08 | 苏州锦艺新材料科技有限公司 | Quartz glass filler, resin composition and copper-clad plate |
| CN112194877B (en) * | 2017-09-22 | 2022-03-22 | 苏州锦艺新材料科技股份有限公司 | Quartz glass filler, resin composition and copper-clad plate |
| CN115180806A (en) * | 2022-08-03 | 2022-10-14 | 南京高新经纬电气有限公司 | Glass state material manufacturing process |
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Application publication date: 20131023 |