CN103360049B - A kind of media ceramic - Google Patents
A kind of media ceramic Download PDFInfo
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- CN103360049B CN103360049B CN201210093125.4A CN201210093125A CN103360049B CN 103360049 B CN103360049 B CN 103360049B CN 201210093125 A CN201210093125 A CN 201210093125A CN 103360049 B CN103360049 B CN 103360049B
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Abstract
The present invention provides a kind of media ceramic, and its raw material includes CaTiO3And B2O3, wherein B2O3Quality be CaTiO3Quality 8～12%.The dielectric constant of this media ceramic can reach about 150, and Q-value is more than 2000 simultaneously；And this media ceramic has the advantage such as densification, uniform, satisfactory mechanical property, it is suitable for promoting in filter field, using.
Description
[technical field]
The present invention relates to ceramic material field, particularly relate to a kind of media ceramic.
[background technology]
Media ceramic is used in the components and parts such as dielectric filter, capacitor, usually require that have higher
Dielectric constant and relatively low dielectric loss angle tangent value.Along with the new development of antenna microwave device, to medium
Dielectric constant and the loss of pottery have had higher requirement.Conventional media ceramic include Barium metatitanate. and some
Oxide, but seldom can realize the product that dielectric constant is more than 30, Q-value is more than 10000.
[summary of the invention]
For drawbacks described above, the present invention solves the technical scheme is that structure of above-mentioned technical problem one
Planting media ceramic, its raw material includes CaTiO3And B2O3, wherein B2O3Quality be CaTiO3Quality
8～12%.
In media ceramic of the present invention, described B2O3Quality be CaTiO3Quality 9～11%.
In media ceramic of the present invention, described B2O3Quality be CaTiO3Quality 10%.
In media ceramic of the present invention, described media ceramic is to utilize high temperature insostatic pressing (HIP) with described raw material
Technique is prepared from.
The invention have the benefit that the media ceramic dielectric constant of the present invention can reach about 150, Q
Value is more than 2000；And compact structure, uniformly, satisfactory mechanical property, can extensive applied microwave unit device
On part such as filter resonance.
[detailed description of the invention]
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with embodiment,
The present invention is further elaborated.Should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
The present invention relates to a kind of media ceramic, its raw material includes CaTiO3And B2O3, wherein B2O3Matter
Amount is CaTiO3Quality 8～12%.Therefore the main component of the present invention is CaTiO3, because this one-tenth
Divide the dielectric constant that can improve media ceramic.A little B2O3Heat stability can be controlled and reduce temperature drift.?
During sintering, the granularity of each composition is all 0.5～1 micron.
Utilizing the media ceramic that above-mentioned formula is made, dielectric constant can reach about 150, and Q-value can
More than 2000；And the media ceramic prepared is fine and close, uniform, satisfactory mechanical property, can extensively answer
It is used on the microwave devices such as dielectric filter.
Embodiment one:
By CaTiO3、B2O3It is 100: 8 preparations according to mass ratio, utilizes hot isostatic pressing technique in temperature
1250～1300 DEG C, above-mentioned material is sintered 2 hours under the conditions of pressure 200～210MPa, prepare required
Media ceramic；After testing, the dielectric constant of the media ceramic obtained is 155, Q-value is 2145；
Spark plasma sintering technology can also be used to prepare above-mentioned media ceramic.
Embodiment two:
By CaTiO3、B2O3It is 100: 10 preparations according to mass ratio, utilizes hot isostatic pressing technique in temperature
1280～1310 DEG C, above-mentioned material is sintered 2.5 hours under the conditions of pressure 180～200MPa, prepare institute
The media ceramic needed；After testing, the dielectric constant of the media ceramic obtained is 153, Q-value is 2210；
Spark plasma sintering technology can also be used to prepare above-mentioned media ceramic.
Embodiment three:
By CaTiO3、B2O3It is 100: 11 preparations according to mass ratio, utilizes hot isostatic pressing technique in temperature
1300～1310 DEG C, above-mentioned material is sintered 2 hours under the conditions of pressure 200～210MPa, prepare required
Media ceramic；After testing, the dielectric constant of the media ceramic obtained is 151, Q-value is 2198；
Spark plasma sintering technology can also be used to prepare above-mentioned media ceramic.
Embodiment four:
By CaTiO3、B2O3It is 100: 12 preparations according to mass ratio, utilizes hot isostatic pressing technique in temperature
1300～1310 DEG C, above-mentioned material is sintered 3 hours under the conditions of pressure 210～220MPa, prepare required
Media ceramic；After testing, the dielectric constant of the media ceramic obtained is 151, Q-value is 2201；
Spark plasma sintering technology can also be used to prepare above-mentioned media ceramic.
In the above-described embodiments, only the present invention is carried out exemplary description, but those skilled in the art
Without departing from the spirit and scope of the present invention the present invention can be entered after reading present patent application
The various amendments of row.
Claims (3)
1. a media ceramic, it is characterised in that: its raw material is by CaTiO3And B2O3Composition, wherein
B2O3Quality be CaTiO3Quality 8～12%, and utilize hot isostatic pressing technique to be prepared from so that
The Q-value of described media ceramic is more than 2000.
Media ceramic the most according to claim 1, it is characterised in that described B2O3Quality be
CaTiO3Quality 9～11%.
Media ceramic the most according to claim 2, it is characterised in that described B2O3Quality be
CaTiO3Quality 10%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210093125.4A CN103360049B (en) | 2012-03-31 | 2012-03-31 | A kind of media ceramic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210093125.4A CN103360049B (en) | 2012-03-31 | 2012-03-31 | A kind of media ceramic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103360049A CN103360049A (en) | 2013-10-23 |
| CN103360049B true CN103360049B (en) | 2016-08-24 |
Family
ID=49362416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210093125.4A Active CN103360049B (en) | 2012-03-31 | 2012-03-31 | A kind of media ceramic |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103360049B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3787219A (en) * | 1972-09-22 | 1974-01-22 | Du Pont | CaTiO{11 -CRYSTALLIZABLE GLASS DIELECTRIC COMPOSITIONS |
| CN102365249A (en) * | 2009-03-26 | 2012-02-29 | 日立金属株式会社 | Dielectric ceramic composition, multilayer dielectric substrate, electronic component, and method for producing dielectric ceramic composition |
-
2012
- 2012-03-31 CN CN201210093125.4A patent/CN103360049B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3787219A (en) * | 1972-09-22 | 1974-01-22 | Du Pont | CaTiO{11 -CRYSTALLIZABLE GLASS DIELECTRIC COMPOSITIONS |
| CN102365249A (en) * | 2009-03-26 | 2012-02-29 | 日立金属株式会社 | Dielectric ceramic composition, multilayer dielectric substrate, electronic component, and method for producing dielectric ceramic composition |
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| Publication number | Publication date |
|---|---|
| CN103360049A (en) | 2013-10-23 |
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Effective date of registration: 20210427 Address after: 518057 2 / F, software building, No.9, Gaoxin Middle Road, Nanshan District, Shenzhen, Guangdong Province Patentee after: KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY Address before: 518034. A, 18B, CIC international business center, 1061 Mei Xiang Road, Shenzhen, Guangdong, Futian District Patentee before: KUANG-CHI INNOVATIVE TECHNOLOGY Ltd. |