CN103354141B - Improve the method and system of the sulphurated siliastic product surface hydrophobicity of staining - Google Patents
Improve the method and system of the sulphurated siliastic product surface hydrophobicity of staining Download PDFInfo
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- CN103354141B CN103354141B CN201310278847.1A CN201310278847A CN103354141B CN 103354141 B CN103354141 B CN 103354141B CN 201310278847 A CN201310278847 A CN 201310278847A CN 103354141 B CN103354141 B CN 103354141B
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000010186 staining Methods 0.000 title claims abstract description 23
- 239000012212 insulator Substances 0.000 claims abstract description 28
- 238000004381 surface treatment Methods 0.000 claims abstract description 10
- 230000006872 improvement Effects 0.000 claims abstract description 8
- 239000005995 Aluminium silicate Substances 0.000 claims description 12
- 235000012211 aluminium silicate Nutrition 0.000 claims description 12
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 12
- 229920001971 elastomer Polymers 0.000 claims description 8
- KHDSWONFYIAAPE-UHFFFAOYSA-N silicon sulfide Chemical compound S=[Si]=S KHDSWONFYIAAPE-UHFFFAOYSA-N 0.000 claims description 8
- 229920002379 silicone rubber Polymers 0.000 claims description 8
- 239000004945 silicone rubber Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000013519 translation Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims description 3
- 239000002131 composite material Substances 0.000 abstract description 10
- 239000007789 gas Substances 0.000 description 24
- 230000008569 process Effects 0.000 description 19
- 238000012360 testing method Methods 0.000 description 16
- 230000008859 change Effects 0.000 description 11
- 239000003570 air Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000013508 migration Methods 0.000 description 6
- 230000005012 migration Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009422 external insulation Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229920000260 silastic Polymers 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
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Abstract
A method for the sulphurated siliastic product surface hydrophobicity that improvement is stained, comprises step: provide the sulphurated siliastic goods stained by dunghill; The dunghill sprayed by atmos low-temperature plasma jet in described product surface carries out surface treatment.Its atmos low-temperature plasma jet acts on the dunghill of this sulphurated siliastic product surface, makes the hydrophobicity of staining sulphurated siliastic surface can move to the surface of dunghill, maintains the pollution flashover voltage polluting sulphurated siliastic product surface; Treatment effeciency is high, can the desirable surface hydrophobicity improving composite insulator, post insulator and the insulating sleeve etc. stained, and is suitable for large-scale popularization and application.
Description
Technical field
The invention belongs to high pressure external insulation field, be specially the method and system that sulphurated siliastic product surface hydrophobicity is stained in a kind of improvement, be particularly applied to the surface treatment of high-temperature silicon disulfide rubber or the auto-vulcanization silastic product stained by kaolin etc.
Background technology
Using high-temperature silicon disulfide rubber (HTV) as composite insulator umbrella skirt sheath material and room temperature vulcanized silicone rubber (RTV) paint in glass insulator and porcelain insulator surface, the application in electric power system is very extensive.High temperature vulcanized have migration of hydrophobicity with room temperature vulcanized silicone rubber, and namely the hydrophobicity of material itself can move to pollution layer surface, makes pollution layer surface there has also been hydrophobicity.And its migration of hydrophobicity is relevant with ambient temperature, material composition, filthy characteristic and contamination amount.Because composite insulator is in actual motion, surperficial contamination can hardly be avoided, and under some environmental condition and filthy composition situation, its migration of hydrophobicity is poor, reduces its pollution flashover voltage, affects the normal operation of electric power system.
Kaolin and diatomite are two kinds of common filthy compositions, wherein kaolin migration of hydrophobicity is poor, when surface of composite insulator contamination with kaolin for time main, the hydrophobicity of composite insulator itself is difficult to migrate to filthy surface, cause flashover voltage to reduce, have impact on the normal operation of electric power system.There are some researches show, corona discharge is the major reason causing Hydrophobicity of Composite Insulator to lose.
Atmos low-temperature plasma jet technology shows very wide application prospect gradually in surface treatment, health care, enhancement of environment etc., active particle is rich in discharge plasma, during for material surface process, the molecular structure of material surface can be changed, make material list reveal different surface propertys.In the past research show, when use plasma directly process do not defile clean HTV and RTV surface time, the high energy particle wherein contained directly acts on the molecule of material surface, can destroy its chemical constitution, makes its hydrophobicity temporary extinction.But adopt the dunghill of atmos low-temperature plasma jet to the sulphurated siliastic product surface stained to carry out surface treatment, have no related documents at present with the scheme improving described product surface hydrophobicity and disclose.
Summary of the invention
Surface hydrophobicity is caused to move produced problem after the composite insulator component etc. made in view of existing HTV or RTV is stained by dunghill, the invention provides the method and system of the sulphurated siliastic product surface hydrophobicity that a kind of improvement is stained, by atmos low-temperature plasma jet to attachment dunghill carry out surface treatment can change the sulphurated siliastic product surface hydrophobicity of staining be difficult to move situation.
The present invention improves the method for the sulphurated siliastic product surface hydrophobicity of staining, and comprises the following steps:
S1., the sulphurated siliastic goods stained by dunghill are provided;
S2. the dunghill sprayed by atmos low-temperature plasma jet in described product surface carries out surface treatment, and the surface hydrophobicity of described dunghill is improved.
Wherein, described atmos low-temperature plasma jet generating step comprises: under atmospheric conditions, the high-field electrode and grounding electrode of fluidic device apply operating voltage, make the flowing gas entering jet pipe produce plasma through electric discharge, and form described plasma jet from the mouth of pipe ejection of jet pipe.
The flow velocity of described flowing gas is 5-100m/s, preferred 10-80 m/s.Described flowing gas from flowing gas generator, as air pump etc.
Described operating voltage can select high-voltage DC power supply, high-voltage ac power, high frequency electric source, radio-frequency power supply or high-voltage pulse power source to provide.When adopting high-voltage ac power, described operating voltage is the alternating voltage of 3-100kV, and frequency is 1-500kHz.
Described sulphurated siliastic goods are the insulator components adopting high-temperature silicon disulfide rubber or room temperature vulcanized silicone rubber to prepare, as composite insulator.Described sulphurated siliastic goods also can be the insulator components being coated with high-temperature silicon disulfide rubber, or are coated with the insulator component of room temperature vulcanized silicone rubber, as glass and porcelain insulator, post insulator, insulating sleeve etc.
The dunghill that the described sulphurated siliastic product surface stained adheres to is kaolin or diatomite etc.
It is 10-300s that described atmos low-temperature plasma jet carries out the surface-treated time to the dunghill of described product surface, preferred 100-240s.
The system of the sulphurated siliastic product surface hydrophobicity that a kind of improvement realizing said method is stained, comprising:
High voltage source, fluidic device and flowing gas generator; Described fluidic device comprises jet pipe, high-field electrode and grounding electrode, described high voltage source applies operating voltage by described high-field electrode and grounding electrode and forms excitation electrical field, make the flowing gas entering jet pipe produce plasma through electric discharge, and form atmos low-temperature plasma jet from the mouth of pipe ejection of jet pipe;
Also comprise a brace table, for installing the sulphurated siliastic goods stained by dunghill, and drive these goods to rotate or/and translation, the dunghill that this product surface is adhered to contacts with atmos low-temperature plasma jet and carries out surface treatment.
In this system, described high voltage source is high-voltage DC power supply, high-voltage ac power, high frequency electric source, radio-frequency power supply or high-voltage pulse power source.Jet pipe is quartz glass tube, teflon tube or metal tube etc.High-field electrode and grounding electrode can adopt different structures, comprise interior pin outer shroud, two plate shaped etc.Flowing gas, from flowing gas generator, can adopt air pump, and use gas flowmeter to measure, control to export the flow of gas, wherein gas type comprises air, nitrogen and argon gas etc., and flowing gas flow velocity is 5-100m/s.
The inventive method atmos low-temperature plasma jet act on stain sulphurated siliastic product surface dunghill on, make the hydrophobicity of staining sulphurated siliastic surface can move to the surface of dunghill, maintain the pollution flashover voltage polluting sulphurated siliastic product surface, ensure the normal operation of equipment.
Present system structure is simple, and easy to use, treatment effeciency is high, ideal can improve the surface hydrophobicity of composite insulator, glass and the porcelain insulator, post insulator, insulating sleeve etc. stained at short notice, be suitable for large-scale popularization and application.
Accompanying drawing explanation
Fig. 1 is that the present invention improves the system schematic of staining sulphurated siliastic product surface hydrophobicity;
The plasma jet design sketch that Fig. 2 is working gas to be produced when being air;
Fig. 3 for staining HTV strip after the different disposal time, the change curve of contact angle in one minute;
Fig. 4 for after staining the process of HTV strip, the change curve of different transit time contact angle;
Fig. 5 for after staining the process of RTV strip, the change curve of different transit time contact angle.
Embodiment
The realization of the object of the invention, functional characteristics and advantage will in conjunction with the embodiments, are described further with reference to accompanying drawing.Should be appreciated that embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
With reference to Fig. 1, shown improvement is stained sulphurated siliastic product surface hydrophobicity system and is comprised high voltage source, fluidic device and flowing gas generator.
Fluidic device comprises jet pipe, high-field electrode and low-field electrode, and jet pipe has a mouth of pipe and air inlet, and atmos low-temperature plasma penetrates from this mouth of pipe.Jet pipe can be quartz glass tube, teflon tube or metal tube etc.High-field electrode and low-field electrode can have various structures and position relationship, can be two tabulars at interior pin outer ring-like or interval etc., as long as high-field electrode and low-field electrode keep at a certain distance away to discharge produce atmos low-temperature plasma; Such as, in two electrodes adopt during pin outer ring-like, two electrodes are placed on the nearly mouth of pipe place in jet pipe; When two electrodes adopt two tabular at intervals, high-field electrode is placed in jet pipe on the position at middle part, and low-field electrode is placed in jet pipe mouth of pipe outside, relative with high-field electrode.
It is the flowing gas of 10-80m/s that flowing gas generator produces flow velocity, can be air pump, and use gas flowmeter to measure, control to export the flow of gas, wherein gas type selects air, nitrogen and argon gas etc.
High voltage source adopts high-voltage ac power, and output AC voltage is that 0-20kV is adjustable, and frequency is that 2.5-5kHz is adjustable.High voltage source also can adopt high-voltage DC power supply or high-voltage pulse power source etc.In use, high voltage source applies operating voltage by described high-field electrode and grounding electrode and forms excitation electrical field, makes the flowing gas entering jet pipe produce plasma through electric discharge, and forms atmos low-temperature plasma jet from the mouth of pipe ejection of jet pipe.
Fig. 1 system also comprises a brace table, for installing the sulphurated siliastic goods stained by dunghill, as composite insulator, post insulator, insulating sleeve ...; And these goods can be driven to rotate and translation, or rotate, or translation, the dunghill that this product surface is adhered to contacts with atmos low-temperature plasma jet and carries out surface treatment.
Below to stain HTV test piece and to stain RTV test piece, describe the jet processing procedure to test piece and treatment effect.
1, HTV test piece and RTV test piece are according to the close coating kaolin of the close ash of certain salt.Prepare grey close 0.5mg/cm
2, the close 0.05mg/cm of salt
2artificial pollution, electrolyte adopts NaCl, and non-electrolyte adopts kaolin, is evenly painted on HTV strip, RTV strip makes and stain HTV test piece and stain RTV test piece.
2, power parameter and gas flow is regulated to produce atmos low-temperature plasma jet, to staining HTV test piece, staining RTV test piece process.In Fig. 1 system, the output voltage regulating high-voltage ac power is 12.5kV, and frequency is 4kHz; Working gas is air, and flow velocity is 46m/s; Jet pipe external diameter 4mm, wall thickness 0.8mm; High-field electrode and grounding electrode are distributed in the interior outside of the jet pipe mouth of pipe, high-field electrode distance mouth of pipe 4mm, grounding electrode distance mouth of pipe 8mm; The atmos low-temperature plasma jet length produced as this system of Fig. 2 is 6mm, in fan-shaped divergent shape.The Temperature Distribution of jet pipe when producing atmos low-temperature plasma jet through measuring, jet pipe maximum temperature is no more than 60 degrees Celsius, belongs to normal temperature scope.
HTV test piece will be stained, stain RTV test piece be placed on respectively distance jet pipe mouth of pipe 5mm place, keep vertical with jet pipe, select several comparatively uniform point of defiling to carry out atmos low-temperature plasma jet process, then get and stain HTV test piece and the contact angle staining RTV test piece measurement processing point and untreated control point after process.Adopt the OCA collection of contact angle measuring instrument record water droplet of Dataphysics company to drip to the data of contact angle within a minute after strip, once, when the globule is basicly stable, its contact angle is static contact angle to note per second.
Shown in Fig. 3, for staining HTV test piece, ash is close for 0.5mg/cm
2when (representing lighter contamination situation), transit time are 0 hour (namely process and measure at once), under the different disposal time, the change curve of contact angle in one minute.Can find out: the hydrophobicity of the treated HTV of staining strip process points obviously will be better than the hydrophobicity of untreated control point (Fig. 3 change curve bottom), process points has good hydrophobicity substantially, and untreated some hydrophobicity is poor, the contact angle of water droplet is decreased to gradually and tends towards stability in the minutes dripped; Processing time was increased to 2 minutes from 30 seconds, and the static contact angle of process points increases gradually, and the processing time, the static contact angle of process points reached maximum and basicly stable, and maximum is about 102 degree by 2 minutes to 4 minutes; Processing time is increased to 5 minutes further, and the contact angle after process reduces to some extent.Show that atmos low-temperature plasma jet can improve the hydrophobicity of staining HTV surface.
Shown in Fig. 4, after staining the process of HTV strip, move the change curve of contact angle after 5 hours, 15 hours, 25 hours respectively.Can find out: along with the increase of transit time, the contact angle of untreated point is without significant change (Fig. 4 change curve bottom), and when showing untreated, the hydrophobicity on HTV surface is difficult to migrate to kaolin pollution layer surface; Along with the increase of transit time, the contact angle staining HTV test piece after process presents to increase to stablizes saturated trend gradually, and saturated velocity is very fast, within 5 hours, namely substantially reach maximum after treatment, contact angle maximum is generally more than 110 degree, and atmos low-temperature plasma jet process can significantly improve the hydrophobicity of staining HTV surface.
Figure 5 shows that, stain RTV test piece, ash is close for 0.5mg/cm
2, use atmos low-temperature plasma jet process 2min, migration different time after, the change curve of contact angle; Can find out: along with the increase of transit time, the contact angle (Fig. 5 change curve bottom) of untreated point is substantially saturated after increasing to 50 degree, and when showing untreated, the hydrophobicity of RTV is difficult to migrate to kaolin pollution layer surface; Along with the increase of transit time, namely the contact angle staining RTV strip (process points) after process to reach capacity after 4 hours value in migration, and contact angle, more than 100 degree, shows that atmos low-temperature plasma jet can improve the hydrophobicity of staining RTV surface.
Above by specific embodiment to invention has been detailed description, these concrete descriptions can not think that the present invention is only only limitted to the content of these embodiments.Those skilled in the art according to the present invention's design, these describe and any improvement made in conjunction with general knowledge known in this field, equivalents, all should be included in the protection range of the claims in the present invention.
Claims (1)
1. the improvement method of sulphurated siliastic product surface hydrophobicity of staining, is characterized in that, comprise the following steps:
S1., the sulphurated siliastic goods stained by dunghill are provided;
S2. the dunghill sprayed by atmos low-temperature plasma jet in described product surface carries out surface treatment, and the surface hydrophobicity of described dunghill is improved;
Wherein, described goods by a brace table driven rotary or/and translation, the dunghill that described product surface adheres to is kaolin or diatomite, and it is 100-240s that described atmos low-temperature plasma jet carries out the surface-treated time to the kaolin of described product surface or diatomite.
2. method according to claim 1, it is characterized in that, described atmos low-temperature plasma jet generating step comprises: under atmospheric conditions, the high-field electrode and grounding electrode of fluidic device apply operating voltage, make the flowing gas entering jet pipe produce plasma through electric discharge, and form described plasma jet from the mouth of pipe ejection of jet pipe.
3. method according to claim 2, is characterized in that, the flow velocity of described flowing gas is 5-100m/s.
4. according to the method in claim 2 or 3, it is characterized in that, described operating voltage is provided by high-voltage DC power supply, high-voltage ac power, high frequency electric source, radio-frequency power supply or high-voltage pulse power source.
5. method according to claim 4, is characterized in that, when adopting described high-voltage ac power, described operating voltage is the alternating voltage of 3-100kV, and frequency is 1-500kHz.
6. method according to claim 1 and 2, it is characterized in that, described sulphurated siliastic goods are the insulator components adopting high-temperature silicon disulfide rubber or room temperature vulcanized silicone rubber to prepare, or be coated with the insulator component of high-temperature silicon disulfide rubber, or be coated with the insulator component of room temperature vulcanized silicone rubber.
7. the improvement system of sulphurated siliastic product surface hydrophobicity of staining, is characterized in that comprising:
High voltage source, flowing gas generator and fluidic device; Described fluidic device comprises jet pipe, high-field electrode and grounding electrode, described high voltage source applies operating voltage by described high-field electrode and grounding electrode and forms excitation electrical field, make the flowing gas entering jet pipe produce plasma through electric discharge, and form atmos low-temperature plasma jet from the mouth of pipe ejection of jet pipe; The flow velocity of described flowing gas is 10-80m/s, is produced by described flowing gas generator;
Also comprise a brace table, for installing the sulphurated siliastic goods stained by dunghill, and drive these goods to rotate or/and translation, the dunghill that this product surface is adhered to contacts with atmos low-temperature plasma jet and carries out surface treatment;
Wherein, described is the insulator components adopting high-temperature silicon disulfide rubber or room temperature vulcanized silicone rubber to prepare by the sulphurated siliastic goods that dunghill stains, or be coated with the insulator component of high-temperature silicon disulfide rubber, or being coated with the insulator component of room temperature vulcanized silicone rubber, the dunghill that this insulator component surface adheres to is kaolin or diatomite.
8. system according to claim 7, is characterized in that, described high voltage source is high-voltage DC power supply, high-voltage ac power, high frequency electric source, radio-frequency power supply or high-voltage pulse power source.
9. system according to claim 7, is characterized in that, described high voltage source adopts high-voltage ac power, and described operating voltage is the alternating voltage of 3-100kV, and frequency is 1-500kHz.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103811264B (en) * | 2014-03-05 | 2016-03-30 | 国家电网公司 | For accelerating the electric discharge device staining silastic material surface hydrophobicity migration rate |
| CN105259079A (en) * | 2015-11-13 | 2016-01-20 | 广东电网有限责任公司电力科学研究院 | Method for measuring surface hydrophobic restoration property of silicone rubber composite insulator obtained after plasma treatment |
| CN105925930A (en) * | 2016-06-07 | 2016-09-07 | 国网江苏省电力公司电力科学研究院 | Processing system used for improving outer insulting performance of composite insulating device |
| CN106182729B (en) * | 2016-08-31 | 2018-12-04 | 南京苏曼等离子科技有限公司 | Normal atmosphere jet stream lower temperature plasma technology seal rubber processing equipment and method |
| CN106670161A (en) * | 2016-12-15 | 2017-05-17 | 国网山东省电力公司电力科学研究院 | Rotary supporting device and method for processing of composite insulator |
| CN106935333B (en) * | 2017-04-06 | 2018-08-21 | 南京工业大学 | Insulator hydrophobicity modification device |
| CN110400663B (en) * | 2019-07-23 | 2020-11-24 | 清华大学深圳研究生院 | Method for rapidly improving interface recoating bonding performance of contaminated silicone rubber material |
| CN111029908B (en) * | 2019-12-31 | 2021-06-15 | 南京工业大学 | Plasma surface modification device for improving carbon deposition resistance of spark plug |
| CN111146693A (en) * | 2019-12-31 | 2020-05-12 | 南京工业大学 | Plasma surface modification method for enhancing carbon deposition resistance of spark plug |
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Address after: Shenzhen Graduate School of Guangdong Province, Shenzhen City Xili 518055 Nanshan District University City Tsinghua University Patentee after: Tsinghua Shenzhen International Graduate School Address before: Shenzhen Graduate School of Guangdong Province, Shenzhen City Xili 518055 Nanshan District University City Tsinghua University Patentee before: GRADUATE SCHOOL AT SHENZHEN, TSINGHUA University |