CN103349339A - Pulse electric field treatment chamber - Google Patents
Pulse electric field treatment chamber Download PDFInfo
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- CN103349339A CN103349339A CN2013101186253A CN201310118625A CN103349339A CN 103349339 A CN103349339 A CN 103349339A CN 2013101186253 A CN2013101186253 A CN 2013101186253A CN 201310118625 A CN201310118625 A CN 201310118625A CN 103349339 A CN103349339 A CN 103349339A
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Abstract
The invention discloses a pulse electric field treatment chamber, which comprises a treatment chamber upper mold, a treatment chamber, an upper electrode, a lower electrode, a treatment chamber lower mold, and semiconductor cooling devices, wherein the internals of the treatment chamber upper mold and the treatment chamber lower mold are respectively provided with a three-stage ladder concave groove structure from the center to both ends, the centers of the treatment chamber upper mold and the treatment chamber lower mold are respectively provided with a water channel, both sides of the water channel are provided with semiconductor cooling device installation holes, the upper side edge and the lower side edge of the treatment chamber are provided with opening grooves, the upper electrode main body and the lower electrode main body are inserted from the opening grooves, a plurality of the semiconductor cooling devices are divided into two sets, the two sets of the semiconductor cooling devices are respectively embedded into the semiconductor cooling device installation holes of the treatment chamber upper mold and the treatment chamber lower mold, and a sealing ring is arranged inside the treatment chamber on one side contacting the upper electrode main body. With the present invention, problems of poor modularity, low cooling efficiency, poor real-time property and the like of the direct cooling water cooling method of the existing pulse electric field treatment chamber are solved, and advantages of pulse electric field and temperature control integration, convenient use, significant heating effect control and the like are provided.
Description
Technical field
What the present invention relates to is a kind of pulse electric field process chamber that adopts semiconductor cooling technology, specifically a kind of Novel pulse electric field processing chamber and method.
Background technology
It is to produce impulse electric field and pulsed magnetic field alternately by power supply and pulse generating unit that impulse electric field is processed, a kind of means that cell membrane is processed have been carried out a large amount of mechanisms of action and impact research at the aspects such as electroporation, food degerming, food protein component, food lipid composition, food carbohydrate ingredient and other component of food of cell membrane.Usually the impulse electric field treatment system mainly comprises: the parts such as supply unit, pulse generating unit, pulse electric field process chamber, cooling system, temperature measuring system.
Although processing, impulse electric field is considered to a kind of non-thermal technology, but because flowing through food, electric current can produce ohm heat, the temperature increase is inevitable, when especially repeatedly processing, heating effect is more obvious, and pulse electric field process chamber is the main place that the heating of food effect occurs as the visual plant of impulse electric field processing food, therefore, effective temperature control of paired pulses electric field processing chamber is the important channel that reduces the impulse electric field heating effect.For impulse electric field processing procedure heating effect, Chinese invention patent 01130064.7 directly adopts cooling water that electrode and pulse electric field process chamber are cooled off to guarantee nonthermal, Chinese invention patent 102349565A also directly adopts cooling circulating water that electrode is cooled off, indirectly realize the temperature control of process chamber processing food, raise in the temperature of processing procedure to reduce meat products.Because impulse electric field to the heating effect of food, directly adopts the cooling of cooling water circulation circuit complicated, the degree of modularity is low, and cooling effectiveness is low, can not in real time regulating impulse electric field treatment room temperature etc. problem.
Summary of the invention
The object of the present invention is to provide a kind of degree of modularity high, cooling effectiveness is high, can realize real-time cooling, but and the regulating impulse electric field processing chamber of real time temperature.
The object of the invention is achieved through the following technical solutions:
A kind of pulse electric field process chamber is characterized in that comprising the process chamber patrix, sealing ring, process chamber, top electrode, bottom electrode, process chamber counterdie and semiconductor cooling device; The inside of process chamber patrix and process chamber counterdie all has therefrom three grades of step groove structures at mind-set two ends; The center of process chamber patrix and process chamber counterdie all is provided with water channel, and the water channel both sides have the semiconductor cooling device installing hole; The inner treatment chamber upper and lower side all is provided with groove, and upper low groove connects by middle pore; The up and down side of process chamber is provided with fluting, and top electrode body and bottom electrode body stretch into from this fluting; A plurality of semiconductor cooling devices are divided into two groups, embed respectively in the semiconductor cooling device installing hole of process chamber patrix and process chamber counterdie, are inserted into the position between process chamber and top electrode or the bottom electrode; Contact with the top electrode body in the process chamber of a side and be provided with sealing ring;
Described semiconductor cooling device comprises water entering section, outlet part, cooling jacket, ring semiconductor cooling assembly, ring temperature sensor, end semiconductor cooling assembly and cooling jacket end cap; The intake antrum of water entering section, the water chamber of outlet part and cooling jacket are the square cavity structure all, and intake antrum is positioned at water chamber, and water chamber is positioned at cooling jacket; The intake antrum top and bottom are respectively equipped with intake antrum end cap and the intake antrum shunting end, and the intake antrum shunting end is provided with through hole; Be sleeved between intake antrum outer surface and the water chamber inner surface water chamber upper support ring and water chamber lower support central spacer; Water chamber upper support ring and water chamber lower support ring all are provided with through hole; End semiconductor cooling assembly and ring semiconductor cooling assembly all are comprised of the TEC101705 semiconductor chilling plate, end semiconductor cooling assembly and be connected semiconductor and cool off assembly and all be connected with power supply respectively; Semiconductor cooling assembly in the end is fixed on the outlet part bottom by thermal paste, and the first ring semiconductor cooling assembly of ring semiconductor cooling assembly, the second ring semiconductor cooling assembly, the 3rd ring semiconductor cooling assembly and Fourth Ring semiconductor cooling assembly are separately fixed on four faces between outlet part and the cooling jacket; The ring temperature sensor is comprised of four temperature sensors, is disposed on respectively first ring semiconductor cooling assembly, the second ring semiconductor cooling assembly, the 3rd ring semiconductor cooling assembly, the lower end of Fourth Ring semiconductor cooling assembly; Control system is connected with ring semiconductor cooling assembly, ring temperature sensor, end semiconductor cooling assembly respectively.
Further, the one side that contacts with process chamber take process chamber patrix and process chamber counterdie respectively is as datum level, the edge is away from the process chamber direction, be provided with the first order step groove of sealing ring size and thickness, the second step groove that is provided with in first order step groove inside is provided with the 3rd step groove in step groove inside, the second level.Described process chamber is cylindrical.Described top electrode comprises top electrode body, two square semiconductor cooling device installing holes and four uniform circular electrode treatment fluid through holes; The top electrode body is that cylinder and rectangle extension connect to form, and the cylinder of top electrode body is installed in inner treatment chamber, and the rectangle extension of top electrode body stretches into by the fluting of process chamber; Described bottom electrode comprises bottom electrode body, two square semiconductor cooling device installing holes and four uniform circular electrode treatment fluid through holes, bottom electrode body is connected to form by a cylinder and rectangle extension, the circular portion of bottom electrode body is installed in inner treatment chamber, and the rectangle extension of bottom electrode body stretches into by the fluting of process chamber treatment region.The described intake antrum shunting end, be provided with four equally distributed through holes.Described water chamber upper support ring and water chamber lower support ring be uniform four rectangular through-hole all.Cooling jacket end cap outer rim is connected with cooling jacket, and ring is connected with the outlet part outer wall in the cooling jacket end cap.Ring semiconductor cooling assembly, the ring temperature sensor is connected assembly and closely is connected with the cooling jacket of insulating heat-conductive by thermal paste with end semiconductor.Described control system comprises Temperature Treatment module, power module, CPU module, communication module, end semiconductor cooling assembly control module and ring semiconductor cooling assembly control module; The Temperature Treatment module comprises four submodules, is connected respectively four temperature sensors in the ring temperature sensor; Four subring semiconductor coolings in the ring semiconductor cooling assembly control module but the assembly control module respectively with ring semiconductor cooling assembly in the corresponding connection of four ring semiconductors cooling assemblies; Power module is electrically connected with modules; The CPU module is cooled off the assembly control module with Temperature Treatment module, communication module, end semiconductor respectively and is connected semiconductor cooling assembly control module and is connected.
With respect to prior art, a kind of Novel pulse electric field processing chamber provided by the invention and method have the following advantages:
(1) the present invention has made up the integrated novel pulse electric field process chamber that comprises semiconductor cooling device and pulse electric field process chamber, has realized that impulse electric field is processed and temperature control is integrated.
(2) the present invention proposes the Novel pulse electric field processing chamber control method of based semiconductor cooling device, reduce the variations in temperature degree of pulse electric field process chamber liquid in processing procedure.
(3) the present invention is integrated semiconductor cooling technology, Dynamic Thermal exchange and mechanical designing technique, solve the heating effect in the existing pulse electric field process chamber processing food process, the Novel pulse electric field processing chamber can be realized the Real Time Monitoring of pulse electric field process chamber temperature.
Description of drawings
Fig. 1 is pulse electric field process chamber structural representation of the present invention;
Fig. 2 is semiconductor cooling device structural representation among Fig. 1;
Fig. 3 is the A-A profile of Fig. 2;
Fig. 4 is the upper electrode arrangement schematic diagram among Fig. 1;
Fig. 5 is the lower electrode arrangement schematic diagram among Fig. 1.
The specific embodiment
In order to understand better the present invention, below in conjunction with drawings and the embodiments the present invention is further specified, should be understood to the specific embodiment only in order to explain the present invention, be not intended to limit the present invention.
Referring to Fig. 1, Fig. 5 and shown in Figure 4, a kind of pulse electric field process chamber comprises process chamber patrix 1, sealing ring 2, process chamber 3, top electrode 4, bottom electrode 5, process chamber counterdie 6 and semiconductor cooling device 7; Process chamber patrix 1 is to have similar important actor type structure with process chamber counterdie 6, and its inside all has therefrom three grades of step groove structures at mind-set two ends; The one side that contacts with process chamber treatment region 3 take process chamber patrix 1 and process chamber counterdie 6 respectively is as datum level, and along away from process chamber treatment region direction, the first order step groove of machined sealing ring size and thickness, first order step groove are used for installation sealing ring 2; Continue the edge away from process chamber treatment region direction, in second step groove of the inner machined of first order step groove less than sealing ring, second level step groove is used for loading liquid, the edge is away from process chamber treatment region direction again, be provided with the 3rd step groove in step groove inside, the second level, third level ladder is used for collecting liquid and is connected with water channel; Process chamber patrix 1 all is provided with water channel with process chamber counterdie 6 centers, and process chamber patrix 1 has the semiconductor cooling device installing hole with the water channel both sides of process chamber counterdie 6; Process chamber 3 is cylindrical, and its inner upper and lower side all is provided with groove, and upper low groove connects by middle pore; The up and down side of process chamber 3 is provided with fluting, and top electrode body 4-1 and bottom electrode body 5-1 stretch into from this fluting; Top electrode 4 comprises top electrode body 4-1, two square semiconductor cooling device installing hole 4-2 and four uniform circular electrode treatment fluid through holes; Top electrode body 4-1 is that cylinder and rectangle extension connect to form, and the cylinder of top electrode body 4-1 is installed in inner treatment chamber, and the rectangle extension of top electrode body 4-1 stretches into by the fluting of process chamber, in order to be connected with extra electric field.Bottom electrode 5 comprises bottom electrode body 5-1, two square semiconductor cooling device installing hole 5-2 and four uniform circular electrode treatment fluid through holes, bottom electrode body 5-1 is connected to form by a cylinder and rectangle extension, the circular portion of bottom electrode body 5-1 is installed in inner treatment chamber, the rectangle extension of bottom electrode body 5-1 stretches into by the fluting of process chamber treatment region, in order to be connected with extra electric field.Four semiconductor cooling devices 7 are divided into two groups, process chamber patrix 1 embeds 2, process chamber counterdie 6 embeds 2,2 semiconductor cooling devices 7 that embed process chamber patrix 1 are symmetrically distributed in the both sides of process chamber patrix 1 water channel, and the semiconductor cooling device 7 that embeds process chamber patrix 1 is inserted into position between process chamber 3 and the top electrode 4 by the square semiconductor cooling device installing hole 4-2 on the top electrode 4.2 semiconductor cooling devices 7 that embed process chamber counterdie 6 are symmetrically distributed in the both sides of process chamber counterdie water channel, and the semiconductor cooling device 7 that embeds process chamber counterdie 6 is inserted into position between process chamber 3 and the bottom electrode 5 by the square semiconductor cooling device installing hole 5-2 on the bottom electrode 5.
During installation, contact with top electrode body 4-1 in the process chamber 3 of a side and put into a sealing ring 2, be right after the top electrode 4 of packing into, put again a sealing ring 2 above the top electrode body 4-1, the patrix 1 that semiconductor cooling device 7 is housed is packed in the process chamber 3; Contact with bottom electrode 5 in the process chamber 3 of a side and put into a sealing ring 2, be right after the bottom electrode 5 of packing into, bottom electrode body 5-1 top put a sealing ring 2 again, and the counterdie 6 that semiconductor cooling device 7 is housed is packed in the process chamber treatment region 3, finishes the installation of pulse electric field process chamber.
During operation, treat liquid enters step groove the process chamber counterdie 6 from the water channel of process chamber counterdie 6, enter the low groove of process chamber treatment region 3 by four the uniform circular bottom electrode treatment fluid through hole 5-3 on the bottom electrode 5, further enter the upper groove of process chamber 3 by the pore in the process chamber 3, and entering step groove in the process chamber patrix 1 by four in the top electrode 4 uniform circular upper electrode treatment fluid through hole 4-3, the water channel by process chamber patrix 1 flows out at last.
Shown in Fig. 2 and 3, semiconductor cooling device 7 comprises water entering section 7-1, outlet part 7-2, cooling jacket 7-3, ring semiconductor cooling assembly 7-4, ring temperature sensor 7-5, end semiconductor cooling assembly 7-6 and cooling jacket end cap 7-7.Wherein water entering section 7-1 comprises intake antrum 7-1-1, intake antrum end cap 7-1-2 and intake antrum shunting end 7-1-3.Outlet part 7-2 comprises water chamber 7-2-1, water chamber upper support ring 7-2-2, water chamber lower support ring 7-2-3, water chamber end cap 7-2-4 and water chamber bottom surface 7-2-5.Intake antrum 7-1-1 is square hollow-core construction; Intake antrum 7-1-1 top and bottom are respectively equipped with intake antrum end cap 7-1-2 and intake antrum shunting end 7-1-3, and intake antrum shunting end 7-1-3 realizes the shunting of cooling water by four holes that are distributed on the bottom.Water chamber 7-2-1 is square hollow-core construction, is arranged on the outside of intake antrum 7-1-1, and intake antrum 7-1-1 is positioned at water chamber 7-2-1; Water chamber upper support ring 7-2-2 and water chamber lower support ring 7-2-3 compartment of terrain are sleeved on intake antrum 7-1-1 outer surface, between intake antrum 7-1-1 outer surface water chamber 7-2-1 inner surface, water chamber upper support ring 7-2-2 and water chamber lower support ring 7-2-3 be uniform four rectangular openings, play the water guide function, water chamber upper support ring 7-2-2 and water chamber lower support ring 7-2-3 play a supporting role to the water chamber 7-2-1 of thin-walled.Water chamber bottom surface 7-2-5 docks by the concave bottom of boss with intake antrum shunting end 7-1-3, and 7-1 plays a supporting role to water entering section.Ring is connected with intake antrum 7-1-1 outer wall in the water chamber end cap 7-2-4, and water chamber end cap 7-2-4 outer rim is connected with water chamber 7-2-1, plays water guide and supporting role.
End semiconductor cooling assembly 7-6 and ring semiconductor cooling assembly 7-4 are comprised of the TEC101705 semiconductor chilling plate, end semiconductor cooling assembly 7-6 and be connected semiconductor and cool off assembly 7-4 and all be connected with power supply respectively; End semiconductor cooling assembly 7-6 is fixed on outlet part 7-2 bottom by thermal paste, and ring temperature sensor 7-5 is thermistor, by the uniform outlet part 7-2 lower end that is fixed on of thermal paste annular; Ring semiconductor cooling assembly 7-4 comprises first ring semiconductor cooling assembly 7-4-1, the second ring semiconductor cooling assembly 7-4-2, the 3rd ring semiconductor cooling assembly 7-4-3, Fourth Ring semiconductor cooling assembly 7-4-4; First ring semiconductor cooling assembly 7-4-1, the second ring semiconductor cooling assembly 7-4-2, the 3rd ring semiconductor cooling assembly 7-4-3 and Fourth Ring semiconductor cooling assembly 7-4-4 are separately fixed on four faces between outlet part 7-2 and the cooling jacket 7-3, and keep the gap with ring temperature sensor 7-5, wherein encircling temperature sensor 7-5 is comprised of four temperature sensors, be disposed on respectively first ring semiconductor cooling assembly 7-4-1, the second ring semiconductor cooling assembly 7-4-2, the 3rd ring semiconductor cooling assembly 7-4-3, the lower end of Fourth Ring semiconductor cooling assembly 7-4-4.Ring semiconductor cooling assembly 7-4, ring temperature sensor 7-5 is connected assembly 7-6 and closely is connected with the cooling jacket 7-3 of insulating heat-conductive by thermal paste with end semiconductor.Cooling jacket end cap 7-7 outer rim is connected with cooling jacket 7-3, and ring is connected with outlet part 7-2 outer wall in the cooling jacket end cap 7-7, and 7-3 plays a supporting role to cooling jacket, is convenient to the turnover of power line and pickup wire.
Control system 7-8 is connected with ring semiconductor cooling assembly, ring temperature sensor, end semiconductor cooling assembly respectively.Specifically control system 7-8 comprises Temperature Treatment module, power module, CPU module, communication module, end semiconductor cooling assembly control module and ring semiconductor cooling assembly control module; The Temperature Treatment module comprises respectively corresponding four temperature sensors that encircle among the temperature sensor 7-5 of four submodules, and four submodules are connected respectively with four temperature sensors that encircle among the temperature sensor 7-5 by connecting line 7-9 in the Temperature Treatment module; Ring semiconductor cooling assembly control module comprises but assembly control module of four subring semiconductor coolings, four subring semiconductor coolings in the ring semiconductor cooling assembly control module but the assembly control module respectively with ring semiconductor cooling assembly 7-4 in the corresponding connection of four ring semiconductors cooling assemblies; End semiconductor cooling assembly control module is connected with end semiconductor cooling assembly 7-6; Power module is electrically connected with modules, for modules among the control system 7-8 provides power supply.Communication module is connected with the CPU module, is used for the user parameters such as chilling temperature are set.
CPU module among the control system 7-8 is responsible for the real time temperature by Temperature Treatment module collection ring temperature sensor 7-5, and control the respective rings semiconductor according to the result of Temperature Treatment module and cool off assembly 7-4 and end semiconductor cooling assembly 7-6, control system 8 realizes the parameter settings such as user's chilling temperature by CPU module controls communication module.Temperature Treatment module, end semiconductor cooling assembly control module and ring semiconductor cooling assembly control module are the control modules of commonly using; Power module and communication module are power supply commonly used and communication module.
Cooling water enters intake antrum 7-1-1 by the connector of intake antrum end cap 7-1-2, by the intake antrum shunting end 7-1-3 cooling water shunting is entered water chamber 7-2-1 again, cooling water is taken away water chamber 7-2-1 four sides and the upper heat of water chamber bottom surface 7-2-5, pass through again water chamber lower support ring 7-2-3, cooling water flow out of after water chamber upper support ring 7-2-2 and water chamber end cap 7-2-4 will heat.Control system 7-8 is by the temperature of four temperature sensors of connecting line 7-9 sampling ring temperature sensor 7-5, the control temperature that the real time temperature that the CPU module of control system 7-8 relatively gathers and user arrange by communication module, and calculating real time temperature and the difference of controlling the temperature preset value, control end semiconductor cooling assembly 7-6 and ring semiconductor cool off the operating current of corresponding semiconductor cooling assembly among the assembly 7-4.As, when real time temperature greater than control temperature more than 10 ℃, control system 7-8 cools off every group of semiconductor subassembly output 1A electric current among the assembly 7-6 to end semiconductor cooling assembly 7-4 and ring semiconductor, when real time temperature greater than 1 ℃ of temperature of control less than 2 ℃, control system 7-8 cools off every group of semiconductor subassembly output 0.2A electric current among the assembly 7-6 to end semiconductor cooling assembly 7-4 and ring semiconductor, when real time temperature greater than 2 ℃ of temperature of control, less than 3 ℃, control system 7-8 cools off every group of semiconductor subassembly output 0.3A electric current among the assembly 7-6 to end semiconductor cooling assembly 7-4 and ring semiconductor, when real time temperature greater than 3 ℃ of temperature of control less than 4 ℃, control system 7-8 cools off every group of semiconductor subassembly output 0.4A electric current among the assembly 7-6 to end semiconductor cooling assembly 7-4 and ring semiconductor, by that analogy; When real time temperature greater than 0.5 ℃ of temperature of control less than 1 ℃, the every group semiconductor subassembly output 0.1A electric current of control system 7-8 in end semiconductor cooling assembly 7-4 and the ring semiconductor cooling assembly 7-6 reaches the effect of control cooling.
The present invention is according to pulse electric field process chamber treat liquid temperature, and the control semiconductor cooling device realizes that the constant temperature of pulse electric field process chamber is processed food, reduces the impulse electric field heating effect to the impact of food impulse electric field treatment effect.Control for semiconductor cooling device 7 may further comprise the steps: fluid temperature variation in the cavity between the step groove of the low groove of liquid and pulse electric field process chamber 3 and process chamber counterdie 6 in the cavity between semiconductor cooling device control system 7-8 detects pulse electric field process chamber 3 by ring temperature sensor 7-5 upper groove and the step groove of process chamber patrix 1, the pulse electric field process chamber variations in temperature may be owing to process the conductivity variations of food, also may cause owing to changes in flow rate, according to intensity of variation, control system 7-8 control loop semiconductor cooling assembly 7-4 and end semiconductor cooling assembly 7-6 electric current, if variations in temperature is large, the input current that then encircles semiconductor cooling assembly 7-4 and end semiconductor cooling assembly 7-6 is large, if variations in temperature is little, the input current that then encircles semiconductor cooling assembly 7-4 and end semiconductor cooling assembly 7-6 is also little.For example, flow rate of liquid by process chamber patrix 1 and process chamber counterdie 6 is 30mL/min, control loop semiconductor cooling assembly 7-4 and end semiconductor cooling assembly 7-6 are of a size of 10mm * 20mm, when the pulse electric field process chamber variations in temperature is 10 ℃, then semiconductor cooling device 7 input currents are 5A, when the pulse electric field process chamber variations in temperature is 1 ℃, then the input current of semiconductor cooling device 7 is 1A.
The above only is preferred embodiment of the present invention, not in order to limit the present invention, for example, the present invention includes four semiconductor cooling devices 7, be divided into two groups up and down, every group of left-right symmetry installed, and can increase or reduce the quantity of semiconductor cooling device etc. during application according to the actual size of pulse electric field process chamber.All any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a pulse electric field process chamber is characterized in that comprising the process chamber patrix, sealing ring, process chamber, top electrode, bottom electrode, process chamber counterdie and semiconductor cooling device; The inside of process chamber patrix and process chamber counterdie all has therefrom three grades of step groove structures at mind-set two ends; The center of process chamber patrix and process chamber counterdie all is provided with water channel, and the water channel both sides have the semiconductor cooling device installing hole; The inner treatment chamber upper and lower side all is provided with groove, and upper low groove connects by middle pore; The up and down side of process chamber is provided with fluting, and top electrode body and bottom electrode body stretch into from this fluting; A plurality of semiconductor cooling devices are divided into two groups, embed respectively in the semiconductor cooling device installing hole of process chamber patrix and process chamber counterdie, are inserted into the position between process chamber and top electrode or the bottom electrode; Contact with the top electrode body in the process chamber of a side and be provided with sealing ring;
Described semiconductor cooling device comprises water entering section, outlet part, cooling jacket, ring semiconductor cooling assembly, ring temperature sensor, end semiconductor cooling assembly and cooling jacket end cap; The intake antrum of water entering section, the water chamber of outlet part and cooling jacket are the square cavity structure all, and intake antrum is positioned at water chamber, and water chamber is positioned at cooling jacket; The intake antrum top and bottom are respectively equipped with intake antrum end cap and the intake antrum shunting end, and the intake antrum shunting end is provided with through hole; Be sleeved between intake antrum outer surface and the water chamber inner surface water chamber upper support ring and water chamber lower support central spacer; Water chamber upper support ring and water chamber lower support ring all are provided with through hole; End semiconductor cooling assembly and ring semiconductor cooling assembly all are comprised of the TEC101705 semiconductor chilling plate, end semiconductor cooling assembly and be connected semiconductor and cool off assembly and all be connected with power supply respectively; Semiconductor cooling assembly in the end is fixed on the outlet part bottom by thermal paste, and the first ring semiconductor cooling assembly of ring semiconductor cooling assembly, the second ring semiconductor cooling assembly, the 3rd ring semiconductor cooling assembly and Fourth Ring semiconductor cooling assembly are separately fixed on four faces between outlet part and the cooling jacket; The ring temperature sensor is comprised of four temperature sensors, is disposed on respectively first ring semiconductor cooling assembly, the second ring semiconductor cooling assembly, the 3rd ring semiconductor cooling assembly, the lower end of Fourth Ring semiconductor cooling assembly; Control system is connected with ring semiconductor cooling assembly, ring temperature sensor, end semiconductor cooling assembly respectively.
2. pulse electric field process chamber according to claim 1, it is characterized in that: the one side that contacts with process chamber take process chamber patrix and process chamber counterdie respectively is as datum level, the edge is away from the process chamber direction, be provided with the first order step groove of sealing ring size and thickness, the second step groove that is provided with in first order step groove inside is provided with the 3rd step groove in step groove inside, the second level.
3. pulse electric field process chamber according to claim 1, it is characterized in that: described process chamber is cylindrical.
4. pulse electric field process chamber according to claim 1, it is characterized in that: described top electrode comprises top electrode body, two square semiconductor cooling device installing holes and four uniform circular electrode treatment fluid through holes; The top electrode body is that cylinder and rectangle extension connect to form, and the cylinder of top electrode body is installed in inner treatment chamber, and the rectangle extension of top electrode body stretches into by the fluting of process chamber; Described bottom electrode comprises bottom electrode body, two square semiconductor cooling device installing holes and four uniform circular electrode treatment fluid through holes, bottom electrode body is connected to form by a cylinder and rectangle extension, the circular portion of bottom electrode body is installed in inner treatment chamber, and the rectangle extension of bottom electrode body stretches into by the fluting of process chamber treatment region.
5. pulse electric field process chamber according to claim 1 is characterized in that: the described intake antrum shunting end, be provided with four equally distributed through holes.
6. pulse electric field process chamber according to claim 1, it is characterized in that: described water chamber upper support ring and water chamber lower support ring be uniform four rectangular through-hole all.
7. pulse electric field process chamber according to claim 1, it is characterized in that: cooling jacket end cap outer rim is connected with cooling jacket, and ring is connected with the outlet part outer wall in the cooling jacket end cap.
8. pulse electric field process chamber according to claim 1 is characterized in that: ring semiconductor cooling assembly, the ring temperature sensor is connected assembly and closely is connected with the cooling jacket of insulating heat-conductive by thermal paste with end semiconductor.
9. pulse electric field process chamber according to claim 1, it is characterized in that: described control system comprises Temperature Treatment module, power module, CPU module, communication module, end semiconductor cooling assembly control module and ring semiconductor cooling assembly control module; The Temperature Treatment module comprises four submodules, is connected respectively four temperature sensors in the ring temperature sensor; Four subring semiconductor coolings in the ring semiconductor cooling assembly control module but the assembly control module respectively with ring semiconductor cooling assembly in the corresponding connection of four ring semiconductors cooling assemblies; Power module is electrically connected with modules; The CPU module is cooled off the assembly control module with Temperature Treatment module, communication module, end semiconductor respectively and is connected semiconductor cooling assembly control module and is connected.
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| CN103349339B (en) | 2014-10-08 |
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