CN103342337B - Metal nanoparticle auxiliary etch legal system is for the method for nanometer line - Google Patents
Metal nanoparticle auxiliary etch legal system is for the method for nanometer line Download PDFInfo
- Publication number
- CN103342337B CN103342337B CN201310289616.0A CN201310289616A CN103342337B CN 103342337 B CN103342337 B CN 103342337B CN 201310289616 A CN201310289616 A CN 201310289616A CN 103342337 B CN103342337 B CN 103342337B
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- nanometer line
- oxidation
- corrosive liquid
- metal nanoparticle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Weting (AREA)
- Silicon Compounds (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention provides a kind of metal nanoparticle auxiliary etch legal system for the method for nanometer line, belong to technical field of semiconductor.By silicon chip pretreatment, then carry out surface oxidation treatment, be then placed in corrosive liquid and leave standstill, be placed in salpeter solution subsequently and soak, then dry up with nitrogen with after a large amount of deionized water rinsing, namely obtain nanometer line.Compared with general dense silicon, be distributed in the aperture of 2 ~ 50nm in the nanometer line that the present invention prepares containing a large amount of diameter, and nanometer line keeps certain single crystal characteristics; This makes it have huger specific area and shows the optics of some uniquenesses, electrology characteristic, and this makes nanometer line show huge utilization prospect in the fields such as nano-sensor, optics, nano-catalytic.
Description
Technical field
The invention belongs to technical field of semiconductor, be specifically related to a kind of preparation method of nanometer line.
Background technology
In recent years, nano material is with the physicochemical properties of its uniqueness with there is potential utilization prospect at numerous areas and cause people and study interest widely.Wherein silicon nanowires is as a kind of novel semi-conducting material, the physical characteristic that the quantum limitation effect presented along with the continuous reduction of diameter dimension, skin effect, quantum limitation effect etc. are novel, make them in optical, electrical, thermal and magnetic and catalytic reaction etc., show the physical property being significantly different from other materials thus, thus show very important utilization potentiality in fields such as luminescence generated by light, large scale integrated circuit, single-electron device, nano-sensors.
Prepare diameter length controlled, the homogeneous silicon nanowires of structure is the target that people pursue always, if want to realize its extensive utilization in making devices, a kind of simple and reliable process, with low cost and the technology can preparing silicon nanowires on a large scale just shows special significance.
The direction of growth according to silicon nanowires is divided, and usual its preparation method mainly divides " from bottom to top " and " from top to bottom " two kinds." from bottom to top " refer to from atom and molecule level, in Material growth process, its structure, component and size etc. are controlled, thus grow required nano structural material.Silicon nanowires that this method obtains normally random distribution, this brings difficulty to large-scale integrated." from top to bottom " refer to from body material, utilize film growth or nanoimprinting technology to prepare nano-material, the silicon nanowires precision that this method obtains is higher, but also has the shortcomings such as high to equipment requirement, cost is high, efficiency is low.
Summary of the invention
The object of the present invention is to provide a kind of simple silicon nanowires preparation technology, adopt the method can prepare nanometer line on a large scale, at low cost.
The present invention is realized by following technical proposal: a kind of metal nanoparticle auxiliary etch legal system for the method for nanometer line, through following each step:
(1) silicon chip pretreatment: silicon chip is used successively acetone, toluene, ethanol, deionized water ultrasonic cleaning 1 ~ 30 minute;
(2) oxidation processes of silicon chip surface: step (1) pretreated silicon chip is carried out surface oxidation treatment formed oxide layer, oxide layer have the formation utilizing meso-hole structure;
(3) preparation of corrosive liquid: be the hydrofluoric acid of 1% ~ 50%, oxidising agent by metal ion catalyst, mass concentration be (0.01 ~ 5) by volume: (0.01 ~ 10): (0 ~ 10) is mixed to get corrosive liquid;
(4) preparation of nanometer: step (2) is placed in step (3) gained corrosive liquid through the silicon chip of surface oxidation treatment, silicon chip is taken out leave standstill 1 ~ 600min at 15 ~ 90 DEG C after, being placed on mass concentration is subsequently take out after soaking 1 ~ 60min in the salpeter solution of 25 ~ 98%, dry up with nitrogen with after a large amount of deionized water rinsing again, namely obtain nanometer line.
The silicon chip of described step (1) is single-chip.
The acetone of described step (1), toluene, ethanol are that commercial analysis is pure.
The oxidation processes of described step (2) adopts conventional thermal oxidation, chemical oxidation, electrochemical oxidation or photochemical catalytic oxidation to carry out oxidation processes to silicon chip surface.
The AgNO of the metal ion catalyst of described step (3) to be concentration be 1mol/L
3, KAuCl
4, HAuCl
4, K
2ptCl
6or H
2ptCl
6solution.
The H of the oxidising agent of described step (3) to be concentration be 0.1 ~ 10mol/L
2o
2, HNO
3, Fe (NO
3)
3, KMnO
4, KBrO
3, K
2cr
2o
7or Na
2s
2o
8.
In described step (4), silicon chip is placed in corrosive liquid standing is carry out in lucifuge darkroom, is oxidized to prevent metal ion.
Described monocrystalline silicon piece comprises n-type silicon chip or p-type silicon chip, and resistivity is 0.001 ~ 1000 Ω cm, and orientation can be (100), (111), (110) etc.
The present invention utilizes some metal ion (Ag, Pd, Au, Pt) can form nano particle at silicon substrate surface autodeposition and makes catalyst oxidation silicon base, in the system of hydrofluoric acid containing, when metal nanoparticle serves as catalyst, utilize hydrofluoric acid solution to come selective dissolution oxidation position, silicon base is formed nanometer line by from top to down corrosion.Utilize the method by parameters such as design metal nanoparticle size, silicon base degree of oxidation, hydrofluoric acid concentration and etching times to realize the controlled synthesis of nanometer line.The nanometer line that orientation is different can be prepared as required, comprise the orientation such as (111), (100), (110).Compared with the traditional handicraft prepared with silicon nanowires, the present invention has that technique is simple, cost is low, can prepare the advantages such as nanometer linear array on a large scale, compared with general dense silicon, be distributed in the aperture of 2 ~ 50nm in the nanometer line that the present invention prepares containing a large amount of diameter, and nanometer line keeps certain single crystal characteristics; This makes it have huger specific area and shows the optics of some uniquenesses, electrology characteristic, and this makes nanometer line show huge utilization prospect in the fields such as nano-sensor, optics, nano-catalytic.
Accompanying drawing explanation
Fig. 1 is preparation technology's schematic diagram of the present invention;
Fig. 2 is that the SEM surface topography of gained nanometer linear array characterizes;
Fig. 3 is that the TEM of single nanometer line characterizes.
Detailed description of the invention
Below in conjunction with embodiment, the present invention will be further described.
Embodiment 1
(1) silicon chip pretreatment: be that 0.01 ~ 0.09 Ω cmp type monocrystalline silicon piece (100) is successively with commercial analytically pure acetone, toluene, ethanol, deionized water ultrasonic cleaning 10 minutes by resistivity;
(2) oxidation processes of silicon chip surface: pretreated for step (1) silicon chip adopted conventional thermal oxidation to carry out surface oxidation treatment and form oxide layer, oxide layer have the formation utilizing meso-hole structure;
(3) preparation of corrosive liquid: be the AgNO of 1mol/L by concentration
3solution, mass concentration be 10% hydrofluoric acid, concentration be the H of 3mol/L
2o
2by volume for 1:8:1 is mixed to get corrosive liquid;
(4) preparation of nanometer: step (2) is placed in step (3) gained corrosive liquid through the silicon chip of surface oxidation treatment in lucifuge darkroom, be oxidized to prevent metal ion, silicon chip is taken out leave standstill 50min at 20 DEG C after, being placed on mass concentration is subsequently take out after soaking 20min in the salpeter solution of 50%, dry up with nitrogen with after a large amount of deionized water rinsing again, namely obtaining nanometer line, is large area nanometer linear array.
Embodiment 2
(1) silicon chip pretreatment: be that the p-type monocrystalline silicon piece (111) of 10 ~ 100 Ω cm is successively with commercial analytically pure acetone, toluene, ethanol, deionized water ultrasonic cleaning 10 minutes by resistivity;
(2) oxidation processes of silicon chip surface: pretreated for step (1) silicon chip adopted conventional chemical oxidation to carry out surface oxidation treatment and form oxide layer, oxide layer have the formation utilizing meso-hole structure;
(3) preparation of corrosive liquid: be the KAuCl of 1mol/L by concentration
4solution), mass concentration be 10% hydrofluoric acid, concentration be the HNO of 5mol/L
3by volume for 5:10:10 is mixed to get corrosive liquid;
(4) preparation of nanometer: step (2) is placed in step (3) gained corrosive liquid through the silicon chip of surface oxidation treatment in lucifuge darkroom, be oxidized to prevent metal ion, silicon chip is taken out leave standstill 60min at 15 DEG C after, being placed on mass concentration is subsequently take out after soaking 20min in the salpeter solution of 50%, dry up with nitrogen with after a large amount of deionized water rinsing again, namely obtaining nanometer line, is large area nanometer linear array.
Embodiment 3
(1) silicon chip pretreatment: be that the N-shaped monocrystalline silicon piece (111) of 0.01 Ω cm is successively with commercial analytically pure acetone, toluene, ethanol, deionized water ultrasonic cleaning 30 minutes by resistivity;
(2) oxidation processes of silicon chip surface: pretreated for step (1) silicon chip adopted Conventional electrochemical oxidation to carry out surface oxidation treatment and form oxide layer, oxide layer have the formation utilizing meso-hole structure;
(3) preparation of corrosive liquid: be the HAuCl of 1mol/L by concentration
4fe (the NO that the hydrofluoric acid that solution, mass concentration are 30%, concentration are 10mol/L
3)
3by volume for 0.01:0.01:0.2 is mixed to get corrosive liquid;
(4) preparation of nanometer: step (2) is placed in step (3) gained corrosive liquid through the silicon chip of surface oxidation treatment in lucifuge darkroom, be oxidized to prevent metal ion, silicon chip is taken out leave standstill 100min at 40 DEG C after, being placed on mass concentration is subsequently take out after soaking 60min in the salpeter solution of 25%, dry up with nitrogen with after a large amount of deionized water rinsing again, namely obtaining nanometer line, is large area nanometer linear array.
Embodiment 4
(1) silicon chip pretreatment: be that the N-shaped monocrystalline silicon piece (111) of 10 ~ 100 Ω cm is successively with commercial analytically pure acetone, toluene, ethanol, deionized water ultrasonic cleaning 1 minute by resistivity;
(2) oxidation processes of silicon chip surface: step (1) pretreated silicon chip is adopted conventional photochemical catalytic oxidation carry out surface oxidation treatment formed oxide layer, oxide layer have the formation utilizing meso-hole structure;
(3) preparation of corrosive liquid: be the K of 1mol/L by concentration
2ptCl
6solution, mass concentration be 1% hydrofluoric acid, concentration be the KMnO of 0.1mol/L
4by volume for 2:8:1 is mixed to get corrosive liquid;
(4) preparation of nanometer: step (2) is placed in step (3) gained corrosive liquid through the silicon chip of surface oxidation treatment in lucifuge darkroom, be oxidized to prevent metal ion, silicon chip is taken out leave standstill 1min at 90 DEG C after, being placed on mass concentration is subsequently take out after soaking 1min in the salpeter solution of 98%, dry up with nitrogen with after a large amount of deionized water rinsing again, namely obtaining nanometer line, is large area nanometer linear array.
Embodiment 5
(1) silicon chip pretreatment: be that the N-shaped monocrystalline silicon piece (111) of 0.01 ~ 0.09 Ω cm is successively with commercial analytically pure acetone, toluene, ethanol, deionized water ultrasonic cleaning 15 minutes by resistivity;
(2) oxidation processes of silicon chip surface: pretreated for step (1) silicon chip adopted conventional thermal oxidation to carry out surface oxidation treatment and form oxide layer, oxide layer have the formation utilizing meso-hole structure;
(3) preparation of corrosive liquid: be the H of 1mol/L by concentration
2ptCl
6solution, mass concentration be 50% hydrofluoric acid, concentration be the KBrO of 8mol/L
3by volume for 4:7:2 is mixed to get corrosive liquid;
(4) preparation of nanometer: step (2) is placed in step (3) gained corrosive liquid through the silicon chip of surface oxidation treatment in lucifuge darkroom, be oxidized to prevent metal ion, silicon chip is taken out leave standstill 600min at 15 DEG C after, being placed on mass concentration is subsequently take out after soaking 10min in the salpeter solution of 80%, dry up with nitrogen with after a large amount of deionized water rinsing again, namely obtaining nanometer line, is large area nanometer linear array.
Embodiment 6
(1) silicon chip pretreatment: be that the p-type monocrystalline silicon piece (110) of 0.001 ~ 0.01 Ω cm is successively with commercial analytically pure acetone, toluene, ethanol, deionized water ultrasonic cleaning 25 minutes by resistivity;
(2) oxidation processes of silicon chip surface: step (1) pretreated silicon chip is adopted conventional photochemical catalytic oxidation carry out surface oxidation treatment formed oxide layer, oxide layer have the formation utilizing meso-hole structure;
(3) preparation of corrosive liquid: be the AgNO of 1mol/L by concentration
3solution), mass concentration be 40% hydrofluoric acid, concentration be the K of 5mol/L
2cr
2o
7by volume for 1:2:1 is mixed to get corrosive liquid;
(4) preparation of nanometer: step (2) is placed in step (3) gained corrosive liquid through the silicon chip of surface oxidation treatment in lucifuge darkroom, be oxidized to prevent metal ion, silicon chip is taken out leave standstill 300min at 60 DEG C after, being placed on mass concentration is subsequently take out after soaking 3min in the salpeter solution of 98%, dry up with nitrogen with after a large amount of deionized water rinsing again, namely obtaining nanometer line, is large area nanometer linear array.
Embodiment 7
(1) silicon chip pretreatment: be that the N-shaped monocrystalline silicon piece (111) of 1000 Ω cm is successively with commercial analytically pure acetone, toluene, ethanol, deionized water ultrasonic cleaning 15 minutes by resistivity;
(2) oxidation processes of silicon chip surface: pretreated for step (1) silicon chip adopted Conventional electrochemical oxidation to carry out surface oxidation treatment and form oxide layer, oxide layer have the formation utilizing meso-hole structure;
(3) preparation of corrosive liquid: be the HAuCl of 1mol/L by concentration
4solution, mass concentration be 20% hydrofluoric acid, concentration be the Na of 10mol/L
2s
2o
8by volume for 5:1:1 is mixed to get corrosive liquid;
(4) preparation of nanometer: step (2) is placed in step (3) gained corrosive liquid through the silicon chip of surface oxidation treatment in lucifuge darkroom, be oxidized to prevent metal ion, silicon chip is taken out leave standstill 100min at 70 DEG C after, being placed on mass concentration is subsequently take out after soaking 30min in the salpeter solution of 30%, dry up with nitrogen with after a large amount of deionized water rinsing again, namely obtaining nanometer line, is large area nanometer linear array.
Embodiment 8
(1) silicon chip pretreatment: be that the p-type monocrystalline silicon piece (110) of 0.001 ~ 0.01 Ω cm is successively with commercial analytically pure acetone, toluene, ethanol, deionized water ultrasonic cleaning 25 minutes by resistivity;
(2) oxidation processes of silicon chip surface: step (1) pretreated silicon chip is adopted conventional photochemical catalytic oxidation carry out surface oxidation treatment formed oxide layer, oxide layer have the formation utilizing meso-hole structure;
(3) preparation of corrosive liquid: be the AgNO of 1mol/L by concentration
3solution), mass concentration is that the hydrofluoric acid of 40% is by volume for 1:2 is mixed to get corrosive liquid;
(4) preparation of nanometer: step (2) is placed in step (3) gained corrosive liquid through the silicon chip of surface oxidation treatment in lucifuge darkroom, be oxidized to prevent metal ion, silicon chip is taken out leave standstill 300min at 60 DEG C after, being placed on mass concentration is subsequently take out after soaking 3min in the salpeter solution of 98%, dry up with nitrogen with after a large amount of deionized water rinsing again, namely obtaining nanometer line, is large area nanometer linear array.
Claims (5)
1. metal nanoparticle auxiliary etch legal system is for a method for nanometer line, it is characterized in that through following each step:
(1) silicon chip pretreatment: silicon chip is used successively acetone, toluene, ethanol, deionized water ultrasonic cleaning 1 ~ 30 minute; Described silicon chip is single-chip, and monocrystalline silicon piece comprises n-type silicon chip or p-type silicon chip, and resistivity is 0.001 ~ 1000 Ω cm;
(2) oxidation processes of silicon chip surface: step (1) pretreated silicon chip is carried out surface oxidation treatment and form oxide layer; Described oxidation processes adopts conventional thermal oxidation, chemical oxidation, electrochemical oxidation or photochemical catalytic oxidation to carry out oxidation processes to silicon chip surface
(3) preparation of corrosive liquid: be the hydrofluoric acid of 1% ~ 50%, oxidising agent by metal ion catalyst, mass concentration be (0.01 ~ 5) by volume: (0.01 ~ 10): (0 ~ 10) is mixed to get corrosive liquid;
(4) preparation of nanometer: step (2) is placed in step (3) gained corrosive liquid through the silicon chip of surface oxidation treatment, silicon chip is taken out leave standstill 1 ~ 600min at 15 ~ 90 DEG C after, being placed on mass concentration is subsequently take out after soaking 1 ~ 60min in the salpeter solution of 25 ~ 98%, dry up with nitrogen with after a large amount of deionized water rinsing again, namely obtain nanometer line.
2. metal nanoparticle auxiliary etch legal system according to claim 1 is for the method for nanometer line, it is characterized in that: the acetone of described step (1), toluene, ethanol are that commercial analysis is pure.
3. metal nanoparticle auxiliary etch legal system according to claim 1 is for the method for nanometer line, it is characterized in that: the AgNO of the metal ion catalyst of described step (3) to be concentration be 1mol/L
3, KAuCl
4, HAuCl
4, K
2ptCl
6or H
2ptCl
6solution.
4. metal nanoparticle auxiliary etch legal system according to claim 1 is for the method for nanometer line, it is characterized in that: the H of the oxidising agent of described step (3) to be concentration be 0.1 ~ 10mol/L
2o
2, HNO
3, Fe (NO
3)
3, KMnO
4, KBrO
3, K
2cr
2o
7or Na
2s
2o
8.
5. metal nanoparticle auxiliary etch legal system according to claim 1 is for the method for nanometer line, it is characterized in that: in described step (4), silicon chip is placed in corrosive liquid standing is carry out in lucifuge darkroom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310289616.0A CN103342337B (en) | 2013-07-11 | 2013-07-11 | Metal nanoparticle auxiliary etch legal system is for the method for nanometer line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310289616.0A CN103342337B (en) | 2013-07-11 | 2013-07-11 | Metal nanoparticle auxiliary etch legal system is for the method for nanometer line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103342337A CN103342337A (en) | 2013-10-09 |
| CN103342337B true CN103342337B (en) | 2016-01-20 |
Family
ID=49277180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310289616.0A Active CN103342337B (en) | 2013-07-11 | 2013-07-11 | Metal nanoparticle auxiliary etch legal system is for the method for nanometer line |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103342337B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103569961A (en) * | 2013-11-20 | 2014-02-12 | 中国科学院理化技术研究所 | Preparation method for silver nanoparticle chain under inducement of silicon nanowire |
| CN104118843B (en) * | 2014-07-24 | 2017-12-01 | 上海师范大学 | Nano-structure array material and preparation method thereof |
| CN104401999A (en) * | 2014-11-05 | 2015-03-11 | 昆明理工大学 | Method for wet impurity removal of industrial silicon |
| CN104409322B (en) * | 2014-11-05 | 2017-10-27 | 昆明理工大学 | A kind of preparation method of sub-wavelength silicon nanowire array |
| CN104576353A (en) * | 2014-12-10 | 2015-04-29 | 昆明理工大学 | Method for preparing nano-porous silicon from Cu nano-particles by two-step auxiliary etching |
| CN105428432B (en) * | 2015-11-06 | 2017-04-12 | 上海师范大学 | Preparation method for porous light-trapping structure on surface of silicon solar cell |
| CN105489474B (en) * | 2015-11-27 | 2018-06-19 | 青岛科技大学 | A kind of method that copper nano-particle auxiliary etch prepares porous silicon |
| CN108445567B (en) * | 2018-03-30 | 2020-09-18 | 苏州沛斯仁光电科技有限公司 | High-reflectivity film with high damage threshold and preparation method thereof |
| CN108996471A (en) * | 2018-07-26 | 2018-12-14 | 深圳清华大学研究院 | The graphical preparation method of silicon nanowires and preparation method thereof, silicon nanowires |
| CN110038537A (en) * | 2019-04-15 | 2019-07-23 | 云南大学 | A kind of modified Nano porous silicon adsorbent and the preparation method and application thereof |
| CN110075807B (en) * | 2019-05-20 | 2022-06-07 | 云南大学 | Modified nano porous silicon adsorbent and preparation method and application thereof |
| CN111484052B (en) * | 2020-04-21 | 2023-07-07 | 哈尔滨霈泽材料科技有限公司 | Preparation method of needled alumina carrier |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102126724A (en) * | 2011-03-31 | 2011-07-20 | 上海交通大学 | Method for preparing silicon nanowire array with smooth surface |
| CN102556953A (en) * | 2012-02-16 | 2012-07-11 | 江苏大学 | Method for preparing two-sided silicon nano-wire array |
| CN102661944A (en) * | 2012-05-14 | 2012-09-12 | 北京化工大学 | Preparation method of surface-enhanced Raman scattering substrate of metal particle array |
| CN102815701A (en) * | 2012-09-05 | 2012-12-12 | 南京航空航天大学 | Preparation method of one-dimensional silicon nanowires with different linear densities |
| US8334216B2 (en) * | 2010-03-02 | 2012-12-18 | National Taiwan University | Method for producing silicon nanostructures |
-
2013
- 2013-07-11 CN CN201310289616.0A patent/CN103342337B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8334216B2 (en) * | 2010-03-02 | 2012-12-18 | National Taiwan University | Method for producing silicon nanostructures |
| CN102126724A (en) * | 2011-03-31 | 2011-07-20 | 上海交通大学 | Method for preparing silicon nanowire array with smooth surface |
| CN102556953A (en) * | 2012-02-16 | 2012-07-11 | 江苏大学 | Method for preparing two-sided silicon nano-wire array |
| CN102661944A (en) * | 2012-05-14 | 2012-09-12 | 北京化工大学 | Preparation method of surface-enhanced Raman scattering substrate of metal particle array |
| CN102815701A (en) * | 2012-09-05 | 2012-12-12 | 南京航空航天大学 | Preparation method of one-dimensional silicon nanowires with different linear densities |
Non-Patent Citations (1)
| Title |
|---|
| "Gas sensing properties of single crystalline porous silicon nanowires";Kui-Qing Peng et al.;《 APPLIED PHYSICS LETTERS》;20091218;第243112-1页右栏 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103342337A (en) | 2013-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103342337B (en) | Metal nanoparticle auxiliary etch legal system is for the method for nanometer line | |
| Huo et al. | Metal‐assisted chemical etching of silicon in oxidizing HF solutions: origin, mechanism, development, and black silicon solar cell application | |
| Li et al. | Metal-assisted chemical etching for designable monocrystalline silicon nanostructure | |
| Smith et al. | Mechanism of nanowire formation in metal assisted chemical etching | |
| Qu et al. | Porous silicon nanowires | |
| To et al. | Fabrication of n-type mesoporous silicon nanowires by one-step etching | |
| Kim et al. | Curved silicon nanowires with ribbon-like cross sections by metal-assisted chemical etching | |
| Peng et al. | Fabrication of single‐crystalline silicon nanowires by scratching a silicon surface with catalytic metal particles | |
| Zhang et al. | Wet chemical synthesis of silver nanowire thin films at ambient temperature | |
| Kolasinski | Charge transfer and nanostructure formation during electroless etching of silicon | |
| Hu et al. | Metal-catalyzed electroless etching of silicon in aerated HF/H2O vapor for facile fabrication of silicon nanostructures | |
| CN101219377A (en) | Precious metal/one-dimensional titanium dioxide nanostructure composite material and method for producing the same | |
| CN108847383A (en) | A kind of preparation method of porous silicon nanowire array | |
| CN104409322A (en) | Preparation method of sub-wavelength silicon nanowire array | |
| Zheng et al. | Porous silicon templates prepared by Cu-assisted chemical etching | |
| CN104576353A (en) | Method for preparing nano-porous silicon from Cu nano-particles by two-step auxiliary etching | |
| CN103337455A (en) | Preparation method of Si nanowire arrays | |
| CN102157621A (en) | Square silicon nanometer hole and preparation method thereof | |
| Hu et al. | Carbon induced galvanic etching of silicon in aerated HF/H2O vapor | |
| CN103500661A (en) | Preparation method and application for carbon nanotube counter electrode thin film material modified by nitrogen-doped graphene quantum dots and graphene oxide | |
| CN104237314A (en) | Preparation method of high-sensitivity room-temperature nitrogen dioxide gas sensitive material | |
| CN102699341B (en) | A kind of wet chemical preparation method of silver-colored micro-/ nano line | |
| Salhi et al. | Wet-chemically etched silicon nanowire: Effect of etching parameters on the morphology and optical characterizations | |
| Gonchar et al. | Structural and optical properties of silicon nanowire arrays fabricated by metal assisted chemical etching with ammonium fluoride | |
| Leng et al. | Progress in metal-assisted chemical etching of silicon nanostructures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |