CN103339286A - Filament for hot wire chemical vapour deposition - Google Patents
Filament for hot wire chemical vapour deposition Download PDFInfo
- Publication number
- CN103339286A CN103339286A CN2012800045834A CN201280004583A CN103339286A CN 103339286 A CN103339286 A CN 103339286A CN 2012800045834 A CN2012800045834 A CN 2012800045834A CN 201280004583 A CN201280004583 A CN 201280004583A CN 103339286 A CN103339286 A CN 103339286A
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- China
- Prior art keywords
- silk
- coating
- wire chemical
- suspension
- refractory metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Inorganic Fibers (AREA)
Abstract
The invention refers to a refractory metal filament for hot wire chemical vapour deposition of semiconductor or dielectric layers, characterized in that at least two spaced apart sections of the filament are provided with a temperature resistant coating. The invention also refers to a method for making such a filament and its use for hot wire chemical vapour deposition of semiconductor or dielectric layers.
Description
Technical field
The present invention relates to the silk for the hot-wire chemical gas-phase deposition of semiconductor layer (particularly silicon layer) or dielectric layer.The present invention also relates to make the method for this silk, with and via the purposes of hot-wire chemical gas-phase deposition in the deposition of the layer that contains silicon or carbon.
Background technology
In so-called hot-wire chemical gas-phase deposition (HWCVD) (being also referred to as CAT-CVD or heated filament CVD), by catalyzer for example the heatable catalytic silk made of tungsten, tantalum, molybdenum or other refractory metal be used to the precursor molecule catalyzed conversion is shaped as the free radical of semi-conductor or dielectric layer.One of precursor molecule of broad research is be used to the silane molecule that makes silicon layer growth.Other possible precursor molecule is, can be used for depositing germanium layer germanium hydride, be used for the hydrocarbons (carbon hydride) of depositing diamond-like layer or be used for the ammonia of silicon nitride layer and the mixture of silane molecule.
HWCVD guarantees very high thin film layer sedimentation velocity, and can be easily extended to very big area.Yet according to the type difference of the precursor molecule that adopts, the catalysis silk is easy to aging rapidly because of the formation of silicide or carbide.Thus, silk becomes more and more crisp, and it finally causes breaking.
It is temperature dependent that irreversible silicide forms, and obviously outstanding under 1600 ℃～1900 ℃ temperature.In the prior art, the end of catalysis silk has cold spot, is taking place under the temperature that irreversible silicide or carbide form, because the higher power end of itself and caloic contacts, thereby temperature is lower.
Summary of the invention
Therefore, the objective of the invention is to show a kind of to being used among the HWCVD, particularly be used in the deposition of silicon layer the mode that the life-span of refractory metal silk improves.
This purpose realizes by with high temperature material the cold spot of silk being applied.Coating is sealed the catalysis silk, makes it avoid the influence of precursor molecule.Prevent the formation of silicide or carbide like this, make the life-span of silk significantly increase.
Coating can be ceramic coating, preferably constituted by non-silicide ceramics, for example, based on the ceramic coating of zirconium white, aluminum oxide, silicon carbide, boron nitride or silicon nitride.Silicide ceramics is the compound of metal and silicon.
According to the present invention, provide refractory coating at least two parts that separate of silk.This means that the part between coating part is not coated, therefore have the catalytic metal surface that is exposed to precursor molecule.
Refractory metal is Nb, Mo, Ta, W and Re.The refractory metal silk can be made by these elements, perhaps by prevailing, namely be higher than the alloy that these elements of 50wt% form and make.
The preferred ceramic coating that is made of stupalith, this stupalith is made of the ordination number element lower than the ordination number of the main ingredient of refractory metal.The formation element of stupalith preferably has the ordination number below 40.
The suspension that coating can be used as pottery or carbon granule applies.The mixture of tackiness agent and pottery or carbon granule can easily be applied to silk by for example smearing.For example, can use resin or water as tackiness agent.
Below, will explain other aspects and advantages of the present invention with reference to the accompanying drawing that the preferred embodiment for the present invention is shown.
Description of drawings
The schematically illustrated illustrative embodiments according to clamping device of the present invention of Fig. 1.
Embodiment
The silk device that schematically shows in the cross-sectional view of Fig. 1 comprises clamping device 1, and what it kept tension force and refractory metal silk 2 is provided electrically contacts to be used for for example catalyzed conversion of silane of precursor molecule.The coldest exposure portion of silk is near clamping device and power supply and encapsulated 3.
For the deposition of semiconductor film (for example silicon fiml) or dielectric film, catalysis silk 2 can be made by the alloy of tungsten, tantalum, molybdenum, niobium or these metals.Tungsten, tantalum and/or molybdenum also can carry out alloy with precious metal.Silk 2 preferably has the diameter of 0.1mm～1mm.
Preferably, coated material should be made by the ultrahigh-temperature coating that can tolerate the temperature that surpasses 1900 ℃.These coatings are made up of the mixture of zirconium white, aluminum oxide, silicon carbide, boron nitride, silicon nitride, carbon or these materials usually.For zirconia coating, can use Resbond
TM904 and its thinner, carbon coating then can use saturated polyacrylonitrile (PAN) solution or the graphite colloidal solution that are dissolved in dimethyl formamide (DMF) to be prepared.Can use more than a kind of above-mentioned materials thereafter.Any people who is familiar with this area can understand the benefit of using this coating immediately.
Preferably, coating is used with for example suspension, for example with thickener or paint vehicle form, its can with suitable dilution agent or solvent, to guarantee the thin and uniform coating for silk.Only need shallow layer to protect the catalysis silk to avoid the influence of precursor gases, and make the caloic of coating be down to minimum.
For depositing silicon layer in matrix, at least one silk device is placed in the chamber, this chamber will be evacuated to subsequently and be lower than normal atmosphere.By several this kind silks are installed, can advantageously improve sedimentation rate and uniformity coefficient in the chamber.Make then electric current flow through the silk 2, make it be heated above 1900 ℃ temperature.Afterwards, gaseous precursors or the steam that contains precursor molecule are introduced in the chamber, and decomposed by the thermocatalysis silk 2 that exposes, thus precursor molecule is catalytically converted into free radical.
The term precursor molecule comprises, for example silicomethane, silicoethane or Trisilicopropane molecule, and as the hydride of any other silicon of the precursor of depositing silicon film.Can add other gas or precursor and come the characteristic of modified membrane, for example mix.For example, can add ammonia and make the silicon nitride film growth.
For the deposition of other semiconductor layer, for example germanium or silicon/germanium film must use the germanium hydride molecule as precursor.Equally, can use the hydrocarbons molecule, make the diamond-film-like growth via HWCVD.
Claims (16)
1. a refractory metal silk that is used for the hot-wire chemical gas-phase deposition of semiconductor layer or dielectric layer is characterized in that,
At least two parts that separate of described silk are provided with the heatproof coating.
2. silk according to claim 1 is characterized in that,
Described coating is non-metallic coating.
3. silk according to claim 1 and 2 is characterized in that,
Described coating is ceramic coating or carbon coating.
4. according to each described silk in the claim 1～3, it is characterized in that,
Described coating is made by the crystalline ceramics material.
5. silk according to claim 4 is characterized in that,
Described stupalith is non-silicide ceramics.
6. according to claim 4 or 5 described silks, it is characterized in that,
Described stupalith is made of the ordination number element lower than the ordination number of the main ingredient of refractory metal.
7. according to each described silk in the claim 1～6, it is characterized in that,
Described coating is used with the suspension that contains carbon granule and/or ceramic particle.
8. according to each described silk in the claim 1～7, it is characterized in that,
The length of the described part of described silk is 1mm～70mm.
9. according to each described silk in the claim 1～8, it is characterized in that,
Described wire mainly is made of tungsten, tantalum and/or molybdenum.
10. according to each described silk in the claim 1～9, it is characterized in that,
Described coating mainly is made of zirconium white, aluminum oxide, silicon carbide, boron nitride, graphite and/or silicon nitride.
11. according to each described silk in the claim 1～10, it is characterized in that,
Described coating tolerates at least 1900 ℃ temperature under reducing atmosphere, be preferably at least 2000 ℃ temperature.
12. according to each described silk in the claim 1～11, it is characterized in that,
Two ends of described silk are provided with the heatproof coating.
13. the purposes of each described silk in the hot-wire chemical gas-phase deposition of semiconductor layer or dielectric layer in the claim 1～12.
14. a manufacturing is used for the method for silk of the hot-wire chemical gas-phase deposition of semiconductor layer or dielectric layer, said method comprising the steps of:
The refractory metal silk is provided, it is characterized in that,
Be coated to the described silk of small part with the suspension of ceramic particle or carbon granule.
15. method according to claim 14 is characterized in that,
Described suspension is the mixture of resin and ceramic particle or carbon granule.
16. method according to claim 15 is characterized in that,
Described suspension is the mixture of water and ceramic particle or carbon granule.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP11150048 | 2011-01-04 | ||
| EP111500484 | 2011-01-04 | ||
| PCT/EP2012/050100 WO2012093142A1 (en) | 2011-01-04 | 2012-01-04 | Filament for hot wire chemical vapour deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103339286A true CN103339286A (en) | 2013-10-02 |
Family
ID=45401019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012800045834A Pending CN103339286A (en) | 2011-01-04 | 2012-01-04 | Filament for hot wire chemical vapour deposition |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP2661515A1 (en) |
| CN (1) | CN103339286A (en) |
| WO (1) | WO2012093142A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107429394A (en) * | 2015-02-18 | 2017-12-01 | 麒麟株式会社 | Heater and its manufacture method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003247062A (en) * | 2002-02-26 | 2003-09-05 | Sony Corp | Method and apparatus for depositing thin film |
| JP2004091836A (en) * | 2002-08-30 | 2004-03-25 | Hiroshima Pref Gov | Hot filament cvd system and filament structure thereof, and hot filament cvd method |
| WO2010067424A1 (en) * | 2008-12-09 | 2010-06-17 | 株式会社アルバック | Catalyst chemical vapor deposition apparatus |
-
2012
- 2012-01-04 CN CN2012800045834A patent/CN103339286A/en active Pending
- 2012-01-04 WO PCT/EP2012/050100 patent/WO2012093142A1/en active Application Filing
- 2012-01-04 EP EP12701685.5A patent/EP2661515A1/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003247062A (en) * | 2002-02-26 | 2003-09-05 | Sony Corp | Method and apparatus for depositing thin film |
| JP2004091836A (en) * | 2002-08-30 | 2004-03-25 | Hiroshima Pref Gov | Hot filament cvd system and filament structure thereof, and hot filament cvd method |
| WO2010067424A1 (en) * | 2008-12-09 | 2010-06-17 | 株式会社アルバック | Catalyst chemical vapor deposition apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107429394A (en) * | 2015-02-18 | 2017-12-01 | 麒麟株式会社 | Heater and its manufacture method |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2661515A1 (en) | 2013-11-13 |
| WO2012093142A1 (en) | 2012-07-12 |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131002 |