CN103336549B - Chip structure of integrated temperature compensation negative feedback - Google Patents
Chip structure of integrated temperature compensation negative feedback Download PDFInfo
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- CN103336549B CN103336549B CN201310251528.1A CN201310251528A CN103336549B CN 103336549 B CN103336549 B CN 103336549B CN 201310251528 A CN201310251528 A CN 201310251528A CN 103336549 B CN103336549 B CN 103336549B
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Abstract
The invention discloses a chip structure of an integrated temperature compensation negative feedback. The chip structure comprises a chip VDD terminal, a chip GND (Ground) terminal, a chip SW (Switch) terminal, a first transistor, a second transistor, a startup circuit module, a power supply module, a logic control module, a drive module and a temperature compensation negative feedback module, wherein the temperature compensation negative feedback module comprises a compensation diode unit (D1), a first resistor (R1), a second resistor (R2), a third resistor (Rsence), a reference current source (Iref) and a comparator. According to the chip structure provided by the invention, a temperature compensation negative feedback loop is integrated, the output voltage Vout of a power supply system of a power supply chip is stable, and the correlation between the power supply chip and the ambient temperature and chip junction temperature is substantially reduced; and a power supply pin and a feedback pin are combined into a pin, so that the possibility that an FB (Feedback) pin fails in the traditional scheme is thoroughly eliminated, and the failure rate of a chip production link is directly reduced; and the system components can be saved, and the system cost advantages are obvious.
Description
Technical field
The present invention relates to a kind of integrated temperature and compensate degenerative chip structure, belong to power semiconductor field, specifically, be suitable for the application of power management integrated circuit.
Background technology
Fig. 1 gives a kind of traditional power supply chip structure, and chip main modular comprises: the first transistor, size much smaller than the transistor seconds of the first transistor, start-up circuit module, power supply module, Logic control module, driver module, and negative feedback module.This chip structure has 4 pins, is high pressure pin SW respectively, power pin VDD, ground pin GND, and feedback pin FB.Fig. 2 gives this chips for former limit feedback system schematic diagram, and this system mainly comprises: rectifier bridge D0, filter capacitor C1, transformer TR1, power supply chip IC1, be connected to the RCD absorption circuit between chip SW and VIN, the DC output stage be connected with transformer secondary, the VDD current supply circuit be connected with transformer ancillary coil and FB backfeed loop.System Working Principle is briefly described below: when DC output voltage Vout is lower than target voltage, vdd voltage reduces, FB voltage reduces, the Logic control module of power supply chip ICI increases the ON time of the first transistor, to transmit the secondary of more energy to transformer, output voltage Vout is raised; When DC output voltage Vout is higher than target voltage, vdd voltage raises, and FB voltage raises, and the Logic control module of power supply chip ICI reduces the ON time of the first transistor, to transmit the secondary of less energy to transformer, output voltage Vout is reduced;
This working method can realize output stage voltage stabilization, but there is temperature effect due to diode D5 in system, and the BV raising diode D5 with system context temperature raises, thus makes the output voltage of system raise with environment temperature and reduce.Simultaneously when the temperature coefficient of chip internal reference voltage V ref and the temperature coefficient of resistance Rsence can not be offset, the negative feedback loop of chip internal can make the output voltage of system raise with junction temperature of chip and change equally.
Summary of the invention
Technical matters to be solved by this invention is to overcome the deficiencies in the prior art, a kind of integrated temperature is provided to compensate degenerative chip structure, can the temperature variant problem of resolution system output voltage Vout, make system components and parts more simplify, cost is lower simultaneously.
The present invention specifically solves the problems of the technologies described above by the following technical solutions:
A kind of integrated temperature compensates degenerative chip structure, comprise chip vdd terminal, chip GND end, chip SW end, the first transistor, transistor seconds, start-up circuit module, power supply module, Logic control module, driver module and band temperature compensation negative feedback module, its chips vdd terminal respectively with band temperature compensation negative feedback module, power supply module, start-up circuit model calling; Described power supply module is connected with band temperature compensation negative feedback module, Logic control module respectively; Described Logic control module respectively with start-up circuit module, be with temperature compensation negative feedback module, driver module is connected; Described driver module is connected with the grid of the first transistor, the grid of transistor seconds respectively; The drain electrode of described start-up circuit module, the first transistor, the drain electrode of transistor seconds are held with chip SW respectively and are connected; The source of described transistor seconds is connected with band temperature compensation negative feedback module; The source of described the first transistor is held with chip GND and is connected; The negative feedback module of described band temperature compensation comprises compensation diode, the first resistance, the second resistance, the 3rd resistance, reference current source and comparer, the one end wherein compensating diode is connected with chip vdd terminal, and the other end compensating diode is connected with one end of the first resistance; The other end of described first resistance is connected with the anode of comparer, the source of transistor seconds, one end of the 3rd resistance respectively; One end of described reference current source is connected with power supply module, and the other end of reference current source is connected with the negative terminal of comparer, one end of the second resistance respectively; The other end of described second resistance is all connected with chip vdd terminal with the other end of the 3rd resistance.
As a preferred technical solution of the present invention: described first resistance, the second resistance and the 3rd resistance are identical type resistance, and have identical temperature coefficient.
As a preferred technical solution of the present invention: described reference current source has zero-temperature coefficient.
As a preferred technical solution of the present invention: described compensation diode comprises N and aligns and connect diode and reversal connection diode, it is series connection that described N aligns the connected mode connecing diode and reversal connection diode, and wherein N is the natural number of more than 1.
Wherein the first transistor is as circuit output stage power switch pipe, transistor seconds is as the current sample of the first transistor, start-up circuit module when chip is started shooting to chip power supply, power supply module when chip normally works to chip power supply, Logic control module is according to the feedback control switch plumber working frequency of chip vdd terminal and dutycycle, driver module is for driving the first transistor and transistor seconds, with temperature compensation negative feedback module sampling vdd terminal voltage and the electric current of transistor seconds, compare with internal reference Iref × R2 after computing, feed back to Logic control module.
In band temperature compensation negative feedback module, compensate diode to be aligned by N and connect diode and be connected with reversal connection Diode series, the temperature effect of the breakdown reverse voltage BV of reversal connection diode and these two parameters of forward conduction voltage Vf of just connecing diode compensates substantially mutually, reference current source is set to without temperature drift current source, because the first resistance, the second resistance and the 3rd resistance adopt same material resistance of the same type, temperature coefficient is identical, so temperature effect compensates mutually.Like this in whole negative feedback loop, realize voltage and current sample and substantially have nothing to do with environment temperature and junction temperature of chip.
Tool of the present invention has the following advantages and beneficial effect:
(1) adopt the power-supply system of the power supply chip of this technology, output voltage Vout stablizes, and significantly weakens with environment temperature and junction temperature of chip correlativity.
(2) adopt the power supply chip of this technology that power pin and feedback pin are merged into a pin, thoroughly eliminate the possibility that in traditional scheme, FB pin lost efficacy, directly reduce the crash rate of chip production link.
(3) adopt the pin of the power supply chip of this technology can reduce to 3, the integrated level of chip is higher, and chip package cost can reduce simultaneously, and can also save system components and parts, system cost is with the obvious advantage simultaneously.
Use the power-supply system output voltage of structure of the present invention little with variation of ambient temperature, and only have three because chip pin can reduce to, system is simple, and cost is low, and reliability is high.
Accompanying drawing explanation
Fig. 1 is a kind of traditional chip structure of the prior art.
Fig. 2 is the systematic schematic diagram of the traditional chip structure of use of the prior art.
Fig. 3 is that integrated temperature of the present invention compensates degenerative chip structure.
Fig. 4 (a) just connects the schematic diagram of connecting again after diode is connected back-to-back with reversal connection diode for compensation diode; Fig. 4 (b) is just connecing for compensating diode N number of the schematic diagram that diode and reversal connection diode connect successively.
Fig. 5 is the former limit feedback system schematic diagram that integrated temperature of the present invention compensates degenerative chip structure.
Fig. 6 is the Buck systematic schematic diagram that integrated temperature of the present invention compensates degenerative chip structure.
Embodiment
Below in conjunction with Figure of description, the specific embodiment of the present invention is described.
As shown in Figure 3, the invention provides a kind of integrated temperature and compensate degenerative chip structure, comprise chip vdd terminal, chip GND end, chip SW end, the first transistor, transistor seconds, start-up circuit module, power supply module, Logic control module, driver module and band temperature compensation negative feedback module, its chips vdd terminal respectively with band temperature compensation negative feedback module, power supply module, start-up circuit model calling; Described power supply module is connected with band temperature compensation negative feedback module, Logic control module respectively; Described Logic control module respectively with start-up circuit module, be with temperature compensation negative feedback module, driver module is connected; Described driver module is connected with the grid of the first transistor, the grid of transistor seconds respectively; The drain electrode of described start-up circuit module, the first transistor, the drain electrode of transistor seconds are held with chip SW respectively and are connected; The source of described transistor seconds is connected with band temperature compensation negative feedback module; The source of described the first transistor is held with chip GND and is connected; The negative feedback module of described band temperature compensation comprises compensation diode D1, the first resistance R1, the second resistance R2, the 3rd resistance Rsence, reference current source Iref and comparer, the one end wherein compensating diode D1 is connected with chip vdd terminal, and the other end compensating diode D1 is connected with one end of the first resistance R1; The other end of described first resistance R1 is connected with the anode of comparer, the source of transistor seconds, one end of the 3rd resistance Rsence respectively; One end of described reference current source Iref is connected with power supply module, and the other end of reference current source Iref is connected with the negative terminal of comparer, one end of the second resistance R2 respectively; The other end of described second resistance R2 is all connected with chip vdd terminal with the other end of the 3rd resistance Rsence.
Wherein the first transistor is as circuit output stage power switch pipe, transistor seconds is as the current sample of the first transistor, start-up circuit module when chip is started shooting to chip power supply, power supply module when chip normally works to chip power supply, Logic control module is according to the feedback control switch plumber working frequency of chip vdd terminal and dutycycle, driver module is for driving the first transistor and transistor seconds, with the electric current of temperature compensation negative feedback module sampling A/D chip vdd terminal voltage and transistor seconds, compare with internal reference Iref × R2 after computing, feed back to Logic control module.
In band temperature compensation negative feedback module, compensate diode to be aligned by N and connect diode and be connected with reversal connection Diode series, the temperature effect of the breakdown reverse voltage BV of reversal connection diode and these two parameters of forward conduction voltage Vf of just connecing diode compensates substantially mutually, reference current source Iref is set to, without temperature drift current source, namely do not vary with temperature and change.Because the first resistance R1, the second resistance R2 and the 3rd resistance Rsence adopt same material resistance of the same type, temperature coefficient is identical, so temperature effect compensates mutually.Like this in whole negative feedback loop, realize voltage and current sample and substantially have nothing to do with environment temperature and junction temperature of chip.
With the electric current of temperature compensation negative feedback module sampling A/D chip vdd terminal voltage and transistor seconds, compare with internal reference Iref × R2 after computing, feed back to Logic control module.The temperature effect of sampled voltage and sample rate current is removed, to remove the temperature effect of whole feedback control loop by design.
1) current sample elimination temperature coefficient principle of work is described below:
The positive terminal voltage VP of comparer is determined by formula (1)
VP = Iref * R2 (1)
Comparer negative terminal voltage VN is determined by formula (2)
VN = Isence * Rsence (2)
When R2 and Rsence adopts same material resistance of the same type, their temperature effect compensates mutually, and is set to minimum, so the temperature coefficient of Isence is minimum due to the temperature coefficient of Iref.Wherein, Isence is the electric current flowing through resistance Rsence.
2) voltage sample elimination temperature coefficient principle of work is described below:
Compensate node voltage Vfbin between diode D1 and the second resistance R2 to be determined by following formula:
Vfbin = VDD – VD1 （3）
Wherein, VD1 is the pressure drop compensating diode.By appropriate design diode back-to-back, the temperature coefficient of VD1 can be made close to zero, therefore under fixing output power prerequisite, the temperature coefficient of feedback voltage Vfb in is close to zero.
The implementation wherein compensating diode can be different according to the demand of system, be not limited to the syndeton of single forward diode and single negative sense diode, can be that multiple diode that just connecing adds being connected in series of multiple reversal connection diode, as Fig. 4 (a) for compensate diode just connect the schematic diagram of connecting again after diode is connected back-to-back with reversal connection diode; Fig. 4 (b) is just connecing for compensating diode N number of the schematic diagram that diode and reversal connection diode connect successively.
Chip structure of the present invention in the power supply system principle of work is described below:
(1) when the present invention is used for former limit fed power supplies system, as shown in Figure 5, this system mainly comprises systematic schematic diagram: rectifier bridge D0, filter capacitor C1, transformer TR1, power supply chip IC1, be connected to the RCD absorption circuit between chip SW and VIN, the DC output stage be connected with transformer secondary, the VDD current supply circuit be connected with transformer ancillary coil and backfeed loop.System Working Principle is briefly described below: when DC output voltage Vout is lower than target voltage, chip vdd terminal voltage reduces, the band temperature compensation negative feedback module of chip IC 2 samples after chip vdd terminal voltage reduces, the Logic control module of chip IC 2 is made to increase the ON time of the first transistor, to transmit the secondary of more energy to transformer, output voltage Vout is raised; When DC output voltage Vout is higher than target voltage, chip vdd terminal voltage raises, the band temperature compensation negative feedback module of chip IC 2 samples after chip vdd terminal voltage raises, the Logic control module of chip IC 2 is made to reduce the ON time of the first transistor, to transmit the secondary of less energy to transformer, output voltage Vout is reduced;
Traditional scheme contrast shown in Fig. 5 and Fig. 2, chip IC 2 without FB feedback pin, and saves the catching diode D5 and electric capacity C5 that are connected with FB pin in Fig. 2 simultaneously, and therefore system schema cost is lower.Use the system schema output voltage of chip structure of the present invention to change less with environment temperature or junction temperature of chip, and as previously mentioned, Fig. 2 structure output voltage change obviously with environment temperature or junction temperature of chip simultaneously.
(2) when the present invention is used for Buck power-supply system, systematic schematic diagram as shown in Figure 6.This system mainly comprises: rectifier bridge D0, filter capacitor C1, power supply chip IC2, be connected to diode D1 between chip GND and system ground wire, be connected to the inductance L 1 between chip GND and output stage, the electric capacity C3 be connected in chip output stage, be connected to diode D2 between chip VDD and output stage, be connected to electric capacity C2 between chip VDD and chip GND.System Working Principle is briefly described below: when DC output voltage Vout is lower than target voltage, vdd voltage reduces, the band temperature compensation negative feedback module of chip IC 2 samples after vdd voltage reduces, the Logic control module of chip IC 2 is made to increase the ON time of the first transistor, to transmit more energy to inductance L 1, output voltage Vout is raised; When DC output voltage Vout is higher than target voltage, vdd voltage raises, the band temperature compensation negative feedback module of chip IC 2 samples after vdd voltage raises, the Logic control module of chip IC 2 is made to reduce the ON time of the first transistor, to transmit less energy to inductance L 1, output voltage Vout is reduced.
Use the Buck system of chip structure of the present invention and use Fig. 1 chip structure Buck systematic comparison, its advantage is identical with for former limit fed power supplies system, is mainly manifested in the aspects such as cost is low, output has a narrow range of temperature.
Therefore, the present invention is integrated with temperature compensation negative feedback loop, and use this structure power-supply system, output voltage is little with variation of ambient temperature, and only has three because chip pin can reduce to, and system is simple, and cost is low.
Claims (4)
1. an integrated temperature compensates degenerative chip structure, comprise chip vdd terminal, chip GND end, chip SW end, the first transistor, transistor seconds, start-up circuit module, power supply module, Logic control module, driver module and band temperature compensation negative feedback module, its chips vdd terminal respectively with band temperature compensation negative feedback module, power supply module, start-up circuit model calling; Described power supply module is connected with band temperature compensation negative feedback module, Logic control module respectively; Described Logic control module respectively with start-up circuit module, be with temperature compensation negative feedback module, driver module is connected; Described driver module is connected with the grid of the first transistor, the grid of transistor seconds respectively; The drain electrode of described start-up circuit module, the first transistor, the drain electrode of transistor seconds are held with chip SW respectively and are connected; The source of described transistor seconds is connected with band temperature compensation negative feedback module; The source of described the first transistor is held with chip GND and is connected; It is characterized in that: the negative feedback module of described band temperature compensation comprises compensation diode (D1), the first resistance (R1), the second resistance (R2), the 3rd resistance (Rsence), reference current source (Iref) and comparer, the one end wherein compensating diode (D1) is connected with chip vdd terminal, and the other end compensating diode (D1) is connected with one end of the first resistance (R1); The other end of described first resistance (R1) is connected with the anode of comparer, the source of transistor seconds, one end of the 3rd resistance (Rsence) respectively; One end of described reference current source (Iref) is connected with power supply module, and the other end of reference current source (Iref) is connected with the negative terminal of comparer, one end of the second resistance (R2) respectively; The other end of described second resistance (R2) is all held with chip GND with the other end of the 3rd resistance (Rsence) and is connected.
2. integrated temperature according to claim 1 compensates degenerative chip structure, it is characterized in that: described first resistance (R1), the second resistance (R2) are identical type resistance with the 3rd resistance (Rsence), and have identical temperature coefficient.
3. integrated temperature according to claim 1 compensates degenerative chip structure, it is characterized in that: described reference current source (Iref) has zero-temperature coefficient.
4. integrated temperature according to claim 1 compensates degenerative chip structure, it is characterized in that: described compensation diode (D1) comprises N and aligns and connect diode and reversal connection diode, it is series connection that described N aligns the connected mode connecing diode and reversal connection diode, and wherein N is the natural number of more than 1.
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| CN2537041Y (en) * | 2002-02-26 | 2003-02-19 | 刘洪� | D.C. stabilizer with nonpolar input of wide voltage range |
| CN1770611A (en) * | 2004-11-06 | 2006-05-10 | 鸿富锦精密工业（深圳）有限公司 | Linear stabilized voltage power circuit |
| CN203405753U (en) * | 2013-06-24 | 2014-01-22 | 无锡芯朋微电子股份有限公司 | Chip structure integrated with temperature compensation negative feedback |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7030680B2 (en) * | 2003-02-26 | 2006-04-18 | Integrated Discrete Devices, Llc | On chip power supply |
| CN103078528A (en) * | 2011-10-26 | 2013-05-01 | 鸿富锦精密工业（深圳）有限公司 | Power adapter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2537041Y (en) * | 2002-02-26 | 2003-02-19 | 刘洪� | D.C. stabilizer with nonpolar input of wide voltage range |
| CN1770611A (en) * | 2004-11-06 | 2006-05-10 | 鸿富锦精密工业（深圳）有限公司 | Linear stabilized voltage power circuit |
| CN203405753U (en) * | 2013-06-24 | 2014-01-22 | 无锡芯朋微电子股份有限公司 | Chip structure integrated with temperature compensation negative feedback |
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