CN103336234B - A kind of test platform being applicable to back contacts crystal-silicon solar cell - Google Patents
A kind of test platform being applicable to back contacts crystal-silicon solar cell Download PDFInfo
- Publication number
- CN103336234B CN103336234B CN201310227224.1A CN201310227224A CN103336234B CN 103336234 B CN103336234 B CN 103336234B CN 201310227224 A CN201310227224 A CN 201310227224A CN 103336234 B CN103336234 B CN 103336234B
- Authority
- CN
- China
- Prior art keywords
- test
- solar cell
- back contacts
- silicon solar
- main support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of test platform being applicable to back contacts crystal-silicon solar cell, comprise main support platform, test macro, adsorption system and temperature control system, described main support platform is as the objective table of back contacts crystal-silicon solar cell, and described test macro, adsorption system and temperature control system are integrated in described main support platform simultaneously.Test platform of the present invention is applicable to the test of back contacts crystal-silicon solar cell, comprises MWT solar cell, EWT solar cell and IBC solar cell etc., has structure simple, multiple functional, measures the feature that cost is low and simple to operate.
Description
Technical field
The invention belongs to area of solar cell, be specifically related to a kind of test platform being applicable to back contacts crystal-silicon solar cell.
Background technology
Day by day exhausted along with fossil energy, the importance of the energy receives increasing concern, and photovoltaic solar is as clean harmless and inexhaustible variety of energy sources is subject to extensive favor.Solar cell a kind ofly solar radiant energy is directly converted to electric energy and by gained delivery of electrical energy to a kind of photoproduction volt device of load.Solar battery structure physically with a large area diode-like seemingly, Fig. 1 is the schematic diagram of typical P type substrate crystal-silicon solar cell.When sun light beam is irradiated to solar battery surface, the photon that energy is more than or equal to crystalline silicon energy gap (~ 1.12eV) produces electron hole pair (Electron-HolePair) at inside battery diverse location, the excess carrier produced are in motion limit, inside battery limit compound, when moving near space charge region, due to the effect of battery internal electric field, electron hole pair is separated and gathers in battery front and rear surfaces that (electronics is assembled in the front of battery, hole is assembled at the back side of battery), also can externally do work as load supplying when connecting load.
In tradition solar battery structure, positive and negative electrode lays respectively at solar cell front and rear surfaces, and the test for this kind of solar cell adopts the form contact front and back electrode of metal probe respectively, gathers detection data, arranges and simulate IV curve.What another was different from traditional solar battery structure is then the back contacts crystal-silicon solar cell that solar cell positive and negative electrode is all positioned at cell backside, Typical Representative has MWT(Metal-wrap-through) solar cell, EWT(Emitter-wrap-through) solar cell and IBC(Interdigitatedbackcontact) solar cell etc.Back contacts crystal-silicon solar cell mainly contains following several large advantage compared to traditional structure solar cell: one, back contacts crystal-silicon solar cell has compared to the high feature of traditional structure efficiency of solar cell, and performance is the most intuitively the minimizing of front surface shading-area and the reduction of surface recombination; Its two, back contacts solar cell is easy to be integrated in component system compared to traditional solar cell more, and owing to reducing the additional process such as interconnecting strip welding, has integrated level good, assembly power output high; Its three, the outward appearance of back contacts solar cell has very large flexibility and independence, can prepare the exterior design of different surface morphology, have compared to traditional solar cell advantage more attractive in appearance for different demand.
In above-mentioned several typical back contacts solar cell, front electrode main gate line is guided to back of solar cell by the mode that MWT solar cell mainly adopts laser to open hole at matrix surface, and thin grid line is then still positioned at battery front surface; EWT solar cell is then adopt laser to diffuse to form p-n junction structure at the intensive Kong Zaijing of opening of matrix surface, and adopt the current transmission characteristic of knot that the photoelectric current that front surface is collected is transferred to cell backside, battery front surface is completely exposed, electrodeless covering; IBC solar cell is then adopt at the matrix back side by selecting the mode of diffusion to form intersecting vertical emitter structure, and then region forms positive and negative electrode region overleaf, forms back contact structure, and EWT is same, and battery front surface there is no grid line overlay area.
In the preparation and determination methods process of back contacts solar cell, an important problem is then the efficiency of how to test this kind of battery.Adopt the method for testing of traditional solar cell obviously not all right, test is the earliest then adopt traditional measurement mode to measure again by adopting the mode of tin bar welding that back side positive and negative electrode is drawn the back side, owing to there is additional process and easily forming hole and sealing-off phenomenon in welding process, its test result is also not fully up to expectations.Propose several specially for the Testing Platform scheme of rear-face contact solar cell in US Patent No. 20120105088A1, adopt the mode of vacuum suction and piston probe fix back contacts solar cell and complete probes touch surveying work.Above-mentioned several table design scheme can well solve for the fixing of back contacts solar cell and absorption problem, but due in the test process of solar cell, battery is owing to being subject to the impact of light radiation, fever phenomenon can be produced, and the unstable rule of temperature can have influence on final solar cell measurement result greatly.And in above-mentioned several scheme and the method for not mentioned how control temperature.
Summary of the invention
The object of the present invention is to provide a kind of structure simple, multiple functional, measure the test platform being applicable to back contacts crystal-silicon solar cell that cost is low and simple to operate, this test platform is applicable to MWT solar cell, the test of the back contacts solar cells such as EWT solar cell and IBC solar cell.
Object of the present invention is achieved by taking following technical scheme:
A kind of test platform being applicable to back contacts crystal-silicon solar cell, it is characterized in that: comprise main support platform, test macro, adsorption system and temperature control system, described main support platform is as the objective table of back contacts crystal-silicon solar cell, described test macro, adsorption system and temperature control system are integrated in described main support platform simultaneously, wherein temperature control system is located at main support platform interior, the through loop of temperature control is formed by some through holes, pass to uniform temperature and moving liquid in through hole, ensure that main support platform is in set temperature value; Test macro is located at inside and the surface of main support platform, forms test access by some through holes, and through hole passes inside and the surface of main support platform, and through hole inside passes to test metal probe; Adsorption system is made up of vacuum cup and vacuum suction path, vacuum cup is located at the surface of main support platform, vacuum suction path forms through loop in the inside of main support platform, vacuum cup and vacuum suction communication, vacuum suction path passes to air-flow and completes absorption to back contacts crystal-silicon solar cell to make vacuum cup.
As one embodiment of the present invention, the vacuum suction path of described adsorption system separately exists in the inside of main support platform, completes adsorption function by individual air stream path, and the length of test metal probe corresponding is thus greater than the height of main support platform; Described test metal probe is provided with the probe springs bearing base avoiding grating back contacts crystal-silicon solar cell surface, and the diameter of described probe springs bearing base is greater than the test access of test macro.
As another embodiment of the invention, the vacuum suction path of described adsorption system and the test access of test macro are incorporated in one, complete absorption and test two processes in same hole inside, the length of test metal probe corresponding is thus less than the height of main support platform; Described test metal probe is provided with the probe springs bearing base avoiding grating back contacts crystal-silicon solar cell surface, and the diameter of described probe springs bearing base equals the test access formation piston apparatus of test macro.
Beneficial outcomes of the present invention is:
(1) the present invention utilizes back contacts solar cell feature and in conjunction with conventional solar cell test technology equipment development test platform out, and structure is simple, multiple functional, it is low and simple to operate to measure cost, Integrated predict model of easily accomplishing scale production.
(2) back contacts crystal-silicon solar cell test platform of the present invention, the process optimization for back contacts solar cell has good directive function.
(3) back contacts crystal-silicon solar cell test platform of the present invention is not limited to a kind of back contacts crystal-silicon solar cell, has universality for different structure back contacts crystal-silicon solar cell.
Accompanying drawing explanation
Fig. 1 is the test macro sketch of existing back contacts crystal-silicon solar cell;
Fig. 2 is the side schematic view of test platform embodiment one of the present invention;
Fig. 3 is the side schematic view of test platform embodiment two of the present invention;
Fig. 4 is the structural representation of main support platform of the present invention;
Fig. 5 is the structural representation of test metal probe of the present invention;
Fig. 6 is the IV parameter of curve figure that embodiment of the present invention test gained has MWT back-contact crystal-silicon solar cell.
In Fig. 1-5: 101, light source; 102, solar simulator; 103, back contacts crystal-silicon solar cell; 104, crystal-silicon solar cell is calibrated; 105, test probe; 106, data processing and temperature control center; 107, data display equipment; 200, main support platform; 201, back contacts crystal-silicon solar cell; 202, rear-face contact electrode; 203, vacuum cup; 204, vacuum suction path; 205, test access; 206, metal probe is tested; 207, the through loop of temperature control; 208, probe springs bearing base.
Embodiment
A kind of test platform being applicable to back contacts crystal-silicon solar cell provided by the invention, comprise main support platform 200, test macro, adsorption system and temperature control system, main support platform 200 is as the objective table of back contacts crystal-silicon solar cell 201, test macro, adsorption system and temperature control system are integrated in main support platform 200 simultaneously, wherein temperature control system is located at main support platform 200 inside, the through loop 207 of temperature control is formed by some through holes, pass to uniform temperature and moving liquid in through hole, ensure that main support platform 200 is in set temperature value; Test macro is located at inside and the surface of main support platform 200, forms test access 205 by some through holes, and through hole passes inside and the surface of main support platform 200, and through hole inside passes to test metal probe 206; Adsorption system is made up of vacuum cup 203 and vacuum suction path 204, vacuum cup 203 is located at the surface of main support platform 200, vacuum suction path 204 forms through loop in the inside of main support platform 200, vacuum cup 203 is communicated with vacuum suction path 204, and vacuum suction path 204 passes to air-flow and completes absorption to back contacts crystal-silicon solar cell 201 to make vacuum cup 203.Main support platform of the present invention is made up of the material that heat conductivility is good, as the material such as copper or aluminium.Insulate completely between test metal probe and main support platform, in order to avoid produce the phenomenons such as electric leakage and affect test result.The present invention specifically has following two kinds of embodiments:
embodiment 1
As shown in Figure 2, the vacuum suction path 204 of the adsorption system of the present embodiment separately exists in the inside of main support platform 200, complete adsorption function by individual air stream path, the length of test metal probe 206 corresponding is thus greater than the height of main support platform 200; Test metal probe 206 is provided with the probe springs bearing base 208 avoiding grating back contacts crystal-silicon solar cell 201 surface, and the diameter of probe springs bearing base 208 is greater than the test access 205 of test macro.
In test process, back contacts crystal-silicon solar cell 201 is positioned at above main support platform 200, the vacuum cup 203 being positioned at main support platform 200 front surface is adsorbed by vacuum suction path 204 pairs of back contacts crystal-silicon solar cells 201 through external vacuum pumping source pumping, carry out temperature control setting by the back contacts crystal-silicon solar cell 201 of the through loop 207 of temperature control to absorption simultaneously, ensure that test platform works a fixed temperature scope, test metal probe 206 with probe springs bearing base 208 is contacted with the rear-face contact electrode 202 of back contacts crystal-silicon solar cell 201 after temperature stabilization by test access 205, carry out test job, after light source exposure and data acquisition process, vacuum suction system lost efficacy, back contacts crystal-silicon solar cell 201 departs from main support platform 200, complete measuring process.The present embodiment adsorption selection power is 10N, and temperature controls to choose constant temperature 25 degrees Celsius of pure water loop temperature-controls.
embodiment 2
As shown in Figure 3, the vacuum suction path 204 of the adsorption system of the present embodiment is incorporated in one with the test access 205 of test macro, complete absorption and test two processes in same hole inside, the length of test metal probe 206 corresponding is thus less than the height of main support platform 200; Test metal probe 206 is provided with the probe springs bearing base 208 avoiding grating back contacts crystal-silicon solar cell 201 surface, and the test access 205 that the diameter of probe springs bearing base 208 equals test macro forms piston apparatus.
The maximum difference of the present embodiment and embodiment 1 is to adsorb path 204 and is incorporated in one with test access 205 and adopts the probe springs bearing base 208 with piston apparatus effect and test metal probe 206 and test.In test process, back contacts crystal-silicon solar cell 201 is positioned at above main support platform 200, the vacuum cup 203 being positioned at main support platform 200 front surface is adsorbed by vacuum suction path 204 pairs of back contacts crystal-silicon solar cells 201 through external vacuum pumping source pumping, carry out temperature control setting by the back contacts crystal-silicon solar cell 201 of the through loop 207 of temperature control to absorption simultaneously, ensure that test platform works a fixed temperature scope, test probe 206 with probe springs bearing base 208 is contacted with the rear-face contact electrode 202 of back contacts crystal-silicon solar cell 201 after temperature stabilization by test access 205, carry out test job, after light source exposure and data acquisition process, vacuum suction system lost efficacy, back contacts crystal-silicon solar cell 201 departs from main support platform 200, complete measuring process.The present embodiment adsorption selection power is 15N, and temperature controls to choose constant temperature 25 degrees Celsius of pure water loop temperature-controls.
The present invention will be described more than to enumerate specific embodiment.It is pointed out that embodiment is only for the invention will be further described, do not represent protection scope of the present invention, the nonessential amendment that other people prompting according to the present invention is made and adjustment, still belong to protection scope of the present invention.
Claims (10)
1. one kind is applicable to the test platform of back contacts crystal-silicon solar cell, it is characterized in that: comprise main support platform (200), test macro, adsorption system and temperature control system, described main support platform (200) is as the objective table of back contacts crystal-silicon solar cell (201), described test macro, adsorption system and temperature control system are integrated in described main support platform (200) simultaneously, wherein temperature control system is located at main support platform (200) inside, the through loop of temperature control (207) is formed by some first through holes, uniform temperature and moving liquid is passed in first through hole, ensure that main support platform (200) is in set temperature value, test macro is located at inside and the surface of main support platform (200), forms test access (205) by some second through holes, and the second through hole passes inside and the surface of main support platform (200), and the second through hole inside passes to test metal probe (206), adsorption system is made up of vacuum cup (203) and vacuum suction path (204), vacuum cup (203) is located at the surface of main support platform (200), vacuum suction path (204) forms through loop in the inside of main support platform (200), vacuum cup (203) is communicated with vacuum suction path (204), and vacuum suction path (204) passes to air-flow and completes absorption to back contacts crystal-silicon solar cell (201) to make vacuum cup (203).
2. the test platform being applicable to back contacts crystal-silicon solar cell according to claim 1, it is characterized in that: the vacuum suction path (204) of described adsorption system separately exists in the inside of main support platform (200), completes adsorption function by individual air stream path.
3. the test platform being applicable to back contacts crystal-silicon solar cell according to claim 2, is characterized in that: the length of described test metal probe (206) is greater than the height of main support platform (200).
4. the test platform being applicable to back contacts crystal-silicon solar cell according to claim 3, it is characterized in that: described test metal probe (206) is provided with the probe springs bearing base (208) avoiding grating back contacts crystal-silicon solar cell (201) surface, and the diameter of described probe springs bearing base (208) is greater than the test access (205) of test macro.
5. the test platform being applicable to back contacts crystal-silicon solar cell according to claim 1, it is characterized in that: the vacuum suction path (204) of described adsorption system and the test access (205) of test macro are incorporated in one, complete absorption and test two processes in same hole inside.
6. the test platform being applicable to back contacts crystal-silicon solar cell according to claim 5, is characterized in that: the length of described test metal probe (206) is less than the height of main support platform (200).
7. the test platform being applicable to back contacts crystal-silicon solar cell according to claim 6, it is characterized in that: described test metal probe (206) is provided with the probe springs bearing base (208) avoiding grating back contacts crystal-silicon solar cell (201) surface, the diameter of described probe springs bearing base (208) equals test access (205) the formation piston apparatus of test macro.
8. the test platform being applicable to back contacts crystal-silicon solar cell according to any one of claim 1-7, is characterized in that: described main support platform (200) is made up of the material that heat conductivility is good.
9. the test platform being applicable to back contacts crystal-silicon solar cell according to claim 8, is characterized in that: the material that described heat conductivility is good is copper or aluminium.
10. the test platform being applicable to back contacts crystal-silicon solar cell according to claim 9, is characterized in that: insulate completely between described test metal probe (206) and main support platform (200).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310227224.1A CN103336234B (en) | 2013-06-08 | 2013-06-08 | A kind of test platform being applicable to back contacts crystal-silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310227224.1A CN103336234B (en) | 2013-06-08 | 2013-06-08 | A kind of test platform being applicable to back contacts crystal-silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103336234A CN103336234A (en) | 2013-10-02 |
| CN103336234B true CN103336234B (en) | 2016-01-20 |
Family
ID=49244437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310227224.1A Expired - Fee Related CN103336234B (en) | 2013-06-08 | 2013-06-08 | A kind of test platform being applicable to back contacts crystal-silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103336234B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6407128B2 (en) | 2015-11-18 | 2018-10-17 | 三菱電機株式会社 | Semiconductor device evaluation apparatus and semiconductor device evaluation method |
| CN109148332B (en) * | 2018-07-18 | 2024-03-01 | 凯盛光伏材料有限公司 | Reverse current overload test bench for testing photovoltaic module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201508401U (en) * | 2009-06-26 | 2010-06-16 | 北京卓立汉光仪器有限公司 | Solar battery piece test device |
| CN202453462U (en) * | 2012-02-01 | 2012-09-26 | 杭州大华仪器制造有限公司 | Multifunctional testing device for overall characteristics of solar cell |
| CN202837489U (en) * | 2012-10-09 | 2013-03-27 | 苏州阿特斯阳光电力科技有限公司 | Back contact solar cell quantum efficiency detecting system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8378706B2 (en) * | 2010-08-02 | 2013-02-19 | Sunpower Corporation | Method to dice back-contact solar cells |
| WO2012057991A2 (en) * | 2010-10-29 | 2012-05-03 | Applied Materials, Inc. | Apparatus and method for testing back-contact solar cells |
-
2013
- 2013-06-08 CN CN201310227224.1A patent/CN103336234B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201508401U (en) * | 2009-06-26 | 2010-06-16 | 北京卓立汉光仪器有限公司 | Solar battery piece test device |
| CN202453462U (en) * | 2012-02-01 | 2012-09-26 | 杭州大华仪器制造有限公司 | Multifunctional testing device for overall characteristics of solar cell |
| CN202837489U (en) * | 2012-10-09 | 2013-03-27 | 苏州阿特斯阳光电力科技有限公司 | Back contact solar cell quantum efficiency detecting system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103336234A (en) | 2013-10-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Savin et al. | Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency | |
| Sai et al. | Potential of very thin and high‐efficiency silicon heterojunction solar cells | |
| Paternoster et al. | Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications | |
| Pathak et al. | The effect of hybrid photovoltaic thermal device operating conditions on intrinsic layer thickness optimization of hydrogenated amorphous silicon solar cells | |
| US20200127149A1 (en) | Bifacial p-type perc solar cell and module, system, and preparation method thereof | |
| US10763377B2 (en) | Bifacial P-type PERC solar cell and module, system, and preparation method thereof | |
| Nicolai et al. | Analysis of silicon solar cells with poly-Si/SiOx carrier-selective base and emitter contacts | |
| Boukortt et al. | Development of high-efficiency PERC solar cells using Atlas Silvaco | |
| CN207720094U (en) | A kind of test device of Condensation photovoltaic battery | |
| Schulte-Huxel et al. | High-efficiency modules with passivated emitter and rear solar cells—an analysis of electrical and optical losses | |
| CN102969368B (en) | Electrode structure of solar cell piece | |
| CN103336234B (en) | A kind of test platform being applicable to back contacts crystal-silicon solar cell | |
| Granek et al. | Back-contact back-junction silicon solar cells under UV illumination | |
| Kobayashi et al. | Heterojunction solar cells with 23% efficiency on n‐type epitaxial kerfless silicon wafers | |
| Gulkowski et al. | Computational modeling and experimental analysis of heterojunction with intrinsic thin-layer photovoltaic module under different environmental conditions | |
| CN102830364B (en) | A kind of measuring method of generating electricity on two sides solar cell | |
| Govaerts et al. | Solar cells from epitaxial foils: An epifoil epiphany | |
| Rühle et al. | Approaching high efficiency wide range silicon solar cells | |
| Padhamnath et al. | Design, development and analysis of large-area industrial silicon solar cells featuring a full area polysilicon based passivating contact on the rear and selective passivating contacts on the front | |
| CN203772520U (en) | Light path structure for testing full-size quantum efficiency of solar cell | |
| CN106911304A (en) | A kind of double test of light source equipment of double-sided solar battery | |
| CN103618032B (en) | A kind of preparation method of high open circuit voltage multicrystalline solar cells | |
| CN202616272U (en) | Small carrier disposing structure | |
| CN203055879U (en) | Quartz boat for diffusion and junction manufacturing of silicon chip | |
| CN202049973U (en) | Crystalline silicon solar cell with selective emitters |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160120 Termination date: 20210608 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |