CN103334084A - Method for increasing adhesive force between tungsten film and silicon substrate - Google Patents
Method for increasing adhesive force between tungsten film and silicon substrate Download PDFInfo
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- CN103334084A CN103334084A CN2013102705356A CN201310270535A CN103334084A CN 103334084 A CN103334084 A CN 103334084A CN 2013102705356 A CN2013102705356 A CN 2013102705356A CN 201310270535 A CN201310270535 A CN 201310270535A CN 103334084 A CN103334084 A CN 103334084A
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Abstract
The invention discloses a method for increasing adhesive force between a tungsten film and a silicon substrate; the method can result in that the growth thickness of the tungsten film on the silicon substrate achieves micron level; furthermore, the adhesive force is good; the tungsten film can be used for researching irradiation performance of a first wall material. The method disclosed by the invention mainly comprises the following steps of: (1) manufacturing the silicon substrate: oxidizing to form a layer of SiO2 on the silicon substrate by using a thermal oxidation method, or, depositing a layer of SiO2 by using a plasma chemical vapour deposition method, depositing a layer of small-crystal polycrystalline silicon by using an ordinary chemical vapour deposition method, or, directly growing polycrystalline silicon on the epitaxy of an insulated substrate; (2) cleaning the silicon substrate: cleaning the manufactured silicon substrate through ethanol, acetone, de-ionized water and high-pressure airflow in sequence; and (3) preparing the tungsten film having the micron-level thickness by using a direct-current magnetron sputtering method. The method disclosed by the invention is capable of preparing films of different thicknesses by controlling corresponding experiment parameters; furthermore, the adhesive force is good.
Description
Technical field
Patent of the present invention belongs to thin-film material and material and makes the field, relate to a kind of by add at substrate plating one deck transition film increase the method for sticking power between the W film that plates and substrate.
Background technology
Magnetron sputtering is in order to carry out high-speed sputtering under subatmospheric, must to improve the ionization level of gas effectively.By introduce magnetic field on target cathode surface, utilize magnetic field that the constraint of charged particle is improved plasma density to increase the method for sputtering raste.Dc sputtering requires target the positive charge that obtains from ion bombardment process can be passed to and its negative electrode that closely contacts, thereby this method can only the sputtered conductor material, is unsuitable for insulating material.Metallic substance commonly used has W, Au, Ag, Ti, Cr etc.Usually the method that adopts is at present: substrate is vertical with the metallics sputter direction, when reaching certain vacuum tightness and ionic concn, metallics can deposit the layer of even film at substrate surface, film directly contacts with substrate, through special processing, thickness is not relevant with test parameter for substrate.
Goal of the invention
Purpose of the present invention is by add the method for plating one deck silicon oxide film at silicon substrate, increase the sticking power between the W film that plates and silicon substrate.
Summary of the invention
Technical problem proposed by the invention is, a kind of method that can increase sticking power between W film and silicon substrate is provided, and good sticking power is to be used for the irradiation effect of research first wall material.
(1) making of silicon substrate
Put into the thermal oxidation furnace oxidation after silicon chip cleaned up, zone of oxidation reaches the hundreds of nanometer; Perhaps directly directly deposit one deck SiO at clean silicon chip surface with the plasma enhanced chemical vapor deposition method
2Perhaps directly use clean silica glass as substrate.Deposit the short grained polysilicon layer of one deck with Low Pressure Chemical Vapor Deposition at silicon substrate, epitaxy on this substrate, the method of extension can be to use silane or DCS to carry out vapour phase epitaxy, like this at the equally distributed film of substrate surface growth one deck, but see on the microcosmic that the surface is uniform concavo-convex phenomenon.
(2) silicon substrate cleans
The silicon substrate of making is passed through successively the cleaning of ethanol, acetone, deionized water and high pressure draft.
(3) magnetron sputtering tungsten
Magnetically controlled DC sputtering is under the situation of certain dutycycle and relative little electric current, can guarantee the deposition that particle is uniform sequential, under certain sputtering time and suitable experiment parameter condition, tungsten film thickness can reach several microns even tens microns, and do not have obscission, sticking power is good between film and substrate.
Embodiment
Below embodiments of the invention are elaborated, present embodiment has provided detailed embodiment and specific operation process being to implement under the prerequisite with the technical solution of the present invention, but protection scope of the present invention is not limited to following embodiment.
Embodiment 1
Present embodiment may further comprise the steps:
(1) making of silicon substrate
Put into thermal oxidation furnace after silicon chip cleaned up, feed O
2, 500-700 ℃ of following oxidation, thickness of oxide layer is 100-300nm; Perhaps directly directly deposit one deck SiO at clean silicon chip surface with the plasma enhanced chemical vapor deposition method
2Perhaps directly use clean silica glass as substrate.Deposit the short grained polysilicon layer of one deck with Low Pressure Chemical Vapor Deposition at silicon substrate, thickness is at 50-200nm, epitaxy on this substrate, and the method for extension can be to use silane or DCS to carry out vapour phase epitaxy, the pressure of extension is 10-100Torr, and epitaxial temperature is 600-1000 ℃.
(2) cleaning of substrate
The silicon substrate of 1cm*1cm cleans 10min in ethanol, acetone, deionized water for ultrasonic successively, and then with high pressure draft it is dried up.Be fixed at last on the sample table, vertical with the alpha emission air flow line.
(3) preparation of W film
Adopt the method for magnetically controlled DC sputtering, at base vacuum 3*10-4Pa, electric current 0.5A under the condition of voltage 300V, through about 10 hours sputter, finally grows into the W film of the good micron thickness of sticking power.
Claims (7)
1. method that increases sticking power between W film and silicon substrate, its characterization step is: at silicon chip with thermal oxidation method oxidation one deck SiO
2Perhaps with plasma chemical vapor deposition deposition one deck SiO
2Perhaps directly select for use silica glass as substrate, polysilicon with the common little crystal grain of chemical Vapor deposition process deposition one deck, grow at the enterprising promoting the circulation of qi phase epitaxy of crystal nucleation layer with silane or DCS, perhaps directly in the enterprising promoting the circulation of qi phase epitaxy growth of insulating substrate, plate tungsten film by the method for magnetron sputtering at this substrate then.
2. the preparation method of silicon oxide film according to claim 1, method is not limited to a kind of, and any one in physical method, the chemical process all can.
3. according to the method for claim 1 and 2 described magnetron sputterings, magnetically controlled DC sputtering generally is used for preparing various films, mainly be electro-conductive material, but metal-coated membrane also is not limited to this method.
4. according to claim 1, the 2 and 3 described methods that prepare film, metal targets can be conductive metallic material such as W, Au, Ag, Ti, Cr.
5. according to the preparation method of claim 1,2,3 and 4 described W films, the preparation method can have any one in the method for manufacturing thin film such as method of method, sol-gel of method, the sputter of evaporation.
6. according to the method for claim 1,2,3,4 and 5 described W films, the thickness of film can reach several microns even tens microns.
7. according to the method for claim 1,2,3,4,5 and 6 described W films, the sticking power between film and silicon substrate is good, the film difficult drop-off.
The content that is not described in detail in the specification sheets of the present invention belongs to this area professional and technical personnel's known prior art.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2013102705356A CN103334084A (en) | 2013-07-01 | 2013-07-01 | Method for increasing adhesive force between tungsten film and silicon substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013102705356A CN103334084A (en) | 2013-07-01 | 2013-07-01 | Method for increasing adhesive force between tungsten film and silicon substrate |
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| CN103334084A true CN103334084A (en) | 2013-10-02 |
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| CN2013102705356A Pending CN103334084A (en) | 2013-07-01 | 2013-07-01 | Method for increasing adhesive force between tungsten film and silicon substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107887081A (en) * | 2017-11-10 | 2018-04-06 | 中国电子科技集团公司第四十研究所 | A kind of method for improving micro-strip plated-through hole film adhesion |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03504658A (en) * | 1988-08-25 | 1991-10-09 | イーストマン・コダック・カンパニー | Clean image detection device |
| US6635570B1 (en) * | 1999-09-30 | 2003-10-21 | Carl J. Galewski | PECVD and CVD processes for WNx deposition |
| CN1719613A (en) * | 2005-06-21 | 2006-01-11 | 电子科技大学 | Silicon material structure on partial insulative layer and preparing process |
| CN102199756A (en) * | 2011-05-11 | 2011-09-28 | 北京航空航天大学 | Preparation method for amorphous tungsten film |
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2013
- 2013-07-01 CN CN2013102705356A patent/CN103334084A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03504658A (en) * | 1988-08-25 | 1991-10-09 | イーストマン・コダック・カンパニー | Clean image detection device |
| US6635570B1 (en) * | 1999-09-30 | 2003-10-21 | Carl J. Galewski | PECVD and CVD processes for WNx deposition |
| CN1719613A (en) * | 2005-06-21 | 2006-01-11 | 电子科技大学 | Silicon material structure on partial insulative layer and preparing process |
| CN102199756A (en) * | 2011-05-11 | 2011-09-28 | 北京航空航天大学 | Preparation method for amorphous tungsten film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107887081A (en) * | 2017-11-10 | 2018-04-06 | 中国电子科技集团公司第四十研究所 | A kind of method for improving micro-strip plated-through hole film adhesion |
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Application publication date: 20131002 |