CN103332661A - Porous GaN preparation method - Google Patents

Porous GaN preparation method Download PDF

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Publication number
CN103332661A
CN103332661A CN2013101691360A CN201310169136A CN103332661A CN 103332661 A CN103332661 A CN 103332661A CN 2013101691360 A CN2013101691360 A CN 2013101691360A CN 201310169136 A CN201310169136 A CN 201310169136A CN 103332661 A CN103332661 A CN 103332661A
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CN
China
Prior art keywords
gan material
gan
porous
porous gan
preparation methods
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CN2013101691360A
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Chinese (zh)
Inventor
黄�俊
徐科
王建峰
周桃飞
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Priority to CN2013101691360A priority Critical patent/CN103332661A/en
Publication of CN103332661A publication Critical patent/CN103332661A/en
Priority to PCT/CN2014/077049 priority patent/WO2014180326A1/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

The present invention relates to a porous GaN material preparation method, which comprises the following steps: S1, dissolving K2S2O8 in deionized water or purified water to prepare a K2S2O8 solution with a concentration of 0.0001-2 mol/L; S2, adding NaOH or KOH to the K2S2O8 solution to prepare a mixed solution with the pH value of more than 7; and S3, placing a GaN material in the mixed solution, and adopting an ultraviolet light source to irradiate the GaN material to obtain the porous GaN material. According to the present invention, an extremely inexpensive photochemical technology is adopted to produce nano-scale pores on the surface of the GaN material, and micro change of a GaN material resistivity can be detected with a lock in amplifier and other micro electrical signal test equipment so as to develop high sensitivity gas sensors.

Description

The preparation method of a kind of porous GaN
[technical field]
The present invention relates to the photochemistry preparation field, relate in particular to the preparation method of a kind of porous GaN.
[background technology]
Along with development of modern industry, kind, the quantity of the gas that uses in Industrial processes and the gas that generates are in process of production also increasing.Wherein much be inflammable, explosive or poisonous gas.For safeguard work personnel's personnel safety, must in processes such as production, transportation, storage, use, strengthen monitoring and qualitative analysis to gas, therefore develop the significant and wide application prospect of high-sensitive gas sensor.
Semiconductor gas sensor is because manufacture craft is simple, cost is lower, sensitivity becomes one of heat subject of people's research than characteristics such as height.Yet along with development of science and technology, people are harsher to the requirement of gas detection in fields such as space flight, nuclear energy, use traditional semiconductor material to prepare the technical requirements that gas sensor no longer satisfies above-mentioned field.
[summary of the invention]
A kind of manufacture craft is simple in order to provide, lower, the higher gas sensor material of sensitivity of cost, and the present invention proposes a kind of porous GaN preparation methods.
The porous GaN preparation methods that the present invention proposes may further comprise the steps: S1, with K 2S 2O 8Be dissolved in deionized water or the pure water, compound concentration is the K of 0.0001mol/L-2mol/L 2S 2O 8Solution; S2, at described K 2S 2O 8Add NaOH or KOH in the solution, secure ph is greater than 7 mixing solutions; S3, the GaN material is placed described mixing solutions, with the described GaN material of ultraviolet source irradiation, obtain porous GaN material.
The extremely cheap photo chemistry technology of the porous GaN preparation methods utilization that the present invention proposes produces the nano level hole at the GaN material surface, these nano level holes have greatly increased the surface-area of GaN material, therefore the faint variation of described porous GaN material surface gaseous constituent and pressure can cause the variation of described porous GaN resistivity of material, the subtle change of porous GaN resistivity of material can be detected by small electrical signals testing apparatuss such as lock-in amplifiers, thereby develop highly sensitive gas sensor.
[description of drawings]
Figure 1 shows that the porous GaN preparation methods schema of one embodiment of the invention.
[embodiment]
In order to make purpose of the present invention, technical scheme and advantage more clear, below in conjunction with specific embodiment and accompanying drawing, the present invention is described in further detail.Should be appreciated that specific embodiment described in the literary composition only in order to explaining technical scheme of the present invention, and not should be understood to limitation of the present invention.
The invention provides a kind of porous GaN preparation methods, as shown in Figure 1, this method may further comprise the steps: S1, compound concentration are the K of 0.0001mol/L-2mol/L 2S 2O 8Solution; S2, at described K 2S 2O 8Solution adds NaOH or KOH, and secure ph is greater than 7 mixing solutions; S3, the GaN material is placed described mixing solutions, and use ultraviolet source irradiation, obtain porous GaN material.
Particularly, in step S1, with K 2S 2O 8Be dissolved in deionized water or the pure water, compound concentration is the K of 0.0001mol/L-2mol/L 2S 2O 8Solution; In step S2, at described K 2S 2O 8Add NaOH or KOH in the solution, secure ph is greater than 7 mixing solutions; In step S3, the GaN material is placed described mixing solutions, with the described GaN material of ultraviolet source irradiation, obtain porous GaN material.
In one embodiment, the pH value of the described mixing solutions among the step S2 is 9-11.
In one of preferred embodiment, place the pH value for the described mixing solutions of 9-11 the GaN material, be 0.01-0.03w/cm with illumination intensity 2The described GaN material of ultraviolet source irradiation 200-300 second, obtain to be of a size of the porous GaN material of 5-10nm.
Preferred embodiment two in, place the pH value to be the described mixing solutions of 9-11 the GaN material, be 0.01-0.03w/cm with illumination intensity 2The described GaN material of ultraviolet source irradiation 800-900 second, obtain to be of a size of the porous GaN material of 10-30nm.
Preferred embodiment three in, place the pH value to be the described mixing solutions of 9-11 the GaN material, be 0.1-0.3w/cm with illumination intensity 2The described GaN material of ultraviolet source irradiation 20-30 second, obtain to be of a size of the porous GaN material of 40-100nm.
Preferred embodiment four in, place the pH value to be the described mixing solutions of 9-11 the GaN material, be 0.1-0.3w/cm with illumination intensity 2The described GaN material of ultraviolet source irradiation 40-60 second, obtain to be of a size of the porous GaN material of 80-200nm.
In the porous GaN preparation methods that the present invention proposes, the photon energy of described ultraviolet source is greater than the 3.4eV(GaN band gap), can be provided by in xenon lamp, sunlight, the ultraviolet laser any one.
In the porous GaN preparation methods that the present invention proposes, described GaN material produces electron-hole pair under the irradiation of described ultraviolet source, wherein hole and GaN reaction generates Ga ion and nitrogen, electronics then with described mixing solutions in anionic reactive disappear, make described GaN material surface produce hole.
The extremely cheap photo chemistry technology of the porous GaN preparation methods utilization that the present invention proposes produces the nano level hole at the GaN material surface, above-mentioned nano level hole has greatly increased the surface-area of GaN material, therefore the faint variation of described porous GaN material surface gaseous constituent and pressure can cause the variation of described porous GaN resistivity of material, the subtle change of porous GaN resistivity of material can be detected by small electrical signals testing apparatuss such as lock-in amplifiers, thereby develop highly sensitive gas sensor.
Though the present invention is described with reference to current preferred embodiments; but those skilled in the art will be understood that; above-mentioned preferred embodiments only is used for explaining and illustrating technical scheme of the present invention; and be not to limit protection scope of the present invention; any within the spirit and principles in the present invention scope; any modification of doing, equivalent replacement, distortion, improvement etc. all should be included within the claim protection domain of the present invention.

Claims (8)

1. porous GaN preparation methods may further comprise the steps:
S1, with K 2S 2O 8Be dissolved in deionized water or the pure water, compound concentration is the K of 0.0001mol/L-2mol/L 2S 2O 8Solution;
S2, at described K 2S 2O 8Add NaOH or KOH in the solution, secure ph is greater than 7 mixing solutions;
S3, the GaN material is placed described mixing solutions, with the described GaN material of ultraviolet source irradiation, obtain porous GaN material.
2. porous GaN preparation methods according to claim 1 is characterized in that, the pH value of described mixing solutions is 9-11.
3. porous GaN preparation methods according to claim 2 is characterized in that, step S3 is: the GaN material is placed described mixing solutions, is 0.01-0.03w/cm with intensity 2The described GaN material of ultraviolet source irradiation 200-300 second, obtain to be of a size of the porous GaN material of 5-10nm.
4. porous GaN preparation methods according to claim 2 is characterized in that, step S3 is: the GaN material is placed described mixing solutions, is 0.01-0.03w/cm with intensity 2The described GaN material of ultraviolet source irradiation 800-900 second, obtain to be of a size of the porous GaN material of 10-30nm.
5. porous GaN preparation methods according to claim 2 is characterized in that, step S3 is: the GaN material is placed described mixing solutions, is 0.1-0.3w/cm with intensity 2The described GaN material of ultraviolet source irradiation 20-30 second, obtain to be of a size of the porous GaN material of 40-100nm.
6. porous GaN preparation methods according to claim 2 is characterized in that, step S3 is: the GaN material is placed described mixing solutions, is 0.1-0.3w/cm with intensity 2The described GaN material of ultraviolet source irradiation 40-60 second, obtain to be of a size of the porous GaN material of 80-200nm.
7. according to any described porous GaN preparation methods of claim 1 to 6, it is characterized in that the photon energy of described ultraviolet source is greater than the light source of 3.4eV.
8. porous GaN preparation methods according to claim 7 is characterized in that, described ultraviolet source is provided by xenon lamp, sunlight, ultraviolet laser.
CN2013101691360A 2013-05-09 2013-05-09 Porous GaN preparation method Pending CN103332661A (en)

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CN2013101691360A CN103332661A (en) 2013-05-09 2013-05-09 Porous GaN preparation method
PCT/CN2014/077049 WO2014180326A1 (en) 2013-05-09 2014-05-08 Preparation method of porous gan

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014180326A1 (en) * 2013-05-09 2014-11-13 中国科学院苏州纳米技术与纳米仿生研究所 Preparation method of porous gan
CN104973558B (en) * 2014-04-10 2017-02-15 中国科学院苏州纳米技术与纳米仿生研究所 III-V nano-structure and making method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102856172A (en) * 2012-08-31 2013-01-02 南京大学 Method for preparing low-stress GaN film
CN103332661A (en) * 2013-05-09 2013-10-02 中国科学院苏州纳米技术与纳米仿生研究所 Porous GaN preparation method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J.A.BARDWELL, ET AL.: "A Simple Wet Etch for GaN", 《JOURNAL OF ELECTRONIC MATERIALS》 *
姚光锐等: "掺杂GaN的湿法刻蚀研究", 《微纳电子技术》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014180326A1 (en) * 2013-05-09 2014-11-13 中国科学院苏州纳米技术与纳米仿生研究所 Preparation method of porous gan
CN104973558B (en) * 2014-04-10 2017-02-15 中国科学院苏州纳米技术与纳米仿生研究所 III-V nano-structure and making method thereof

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Application publication date: 20131002