CN103326100B - Spinning microwave oscillator and preparation method thereof - Google Patents
Spinning microwave oscillator and preparation method thereof Download PDFInfo
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- CN103326100B CN103326100B CN201310256808.1A CN201310256808A CN103326100B CN 103326100 B CN103326100 B CN 103326100B CN 201310256808 A CN201310256808 A CN 201310256808A CN 103326100 B CN103326100 B CN 103326100B
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Abstract
The invention provides a kind of preparation method of spinning microwave oscillator, comprise the steps: that preparation runs through the through hole of described alumina formwork front and back on alumina formwork, and utilize magnetron sputtering or electron beam evaporation to make conductive layer at the described alumina formwork back side; Adopt three electrode deposition systems depositions of bottom electrode layer, magnetoresistance effect, top electrode layer successively from bottom to up in described through hole; Wherein, described magnetoresistance effect comprises the first magnetosphere, nonmagnetic spacer layers, the second magnetosphere that deposit successively from bottom to up.The present invention also provides the structure of this spinning microwave oscillator.Method of the present invention can the good spinning microwave oscillator array of homogeneity of self assembly high-sequential from bottom to top, and multiple nanometer spinning microwave oscillator can be deposited in same through hole, form the nano wire containing multiple nanometer spinning microwave oscillator, increase the power output of device, there is the scope of application widely.
Description
Technical field
The present invention relates to microwave oscillator technical field, particularly a kind of spinning microwave oscillator and preparation method thereof of Nano grade.
Background technology
In accurate Spin Valve or ferromagnetic multilayers (free layer/separator/pinning layer) nanostructure, when spin polarized current passes through, spin transfer torque (spintransfertorque under certain condition, STT) magnetic moments precession of free magnetic layer can be caused, thus cause the vibration of magneto-resistor, the direct current signal of input is converted to higher-order of oscillation microwave signal.Based on the oscillator of this effect, i.e. spin transfer torque nanometer oscillator (Spin-TransferNano-Oscillator, STNO), can be used as the microwave generator of nanoscale of new generation.Compared with at present conventional microwave generator, STNO has that structure is simple, size is little, band modulation wide ranges (reaching 1-200GHz), operating voltage low (1.0V) and the advantage such as operating temperature range is wide.But, practical application be reached, also have a lot of problem to need to solve, as power is low, need to add external magnetic field etc.And prepare the STNO of nano-scale, generally adopt the micro-nano technology technology such as photoetching, electron beam exposure, thin film deposition, stripping, cause manufacturing cost large, complicated process of preparation.
Summary of the invention
For solving the problem, the invention provides a kind of preparation method of spinning microwave oscillator, comprising the steps:
Steps A: preparation runs through the through hole of described alumina formwork front and back on alumina formwork, and utilize magnetron sputtering or electron beam evaporation to make conductive layer at the described alumina formwork back side;
Step B: adopt three electrode deposition systems depositions of bottom electrode layer, magnetoresistance effect, top electrode layer successively from bottom to up in described through hole; Wherein, described magnetoresistance effect comprises the first magnetosphere, nonmagnetic spacer layers, the second magnetosphere that deposit successively from bottom to up.
Preferably, magnetoresistance effect described in repeated deposition n time, n is the natural number of be not more than 300; And, be also provided with an intermediate isolating layer between magnetoresistance effect between two.
Preferably, described through-hole aperture scope is 20 ~ 400nm; Described alumina formwork thickness is 20 ~ 30um.
Preferably, described alumina formwork is that control temperature is-5 ~ 20 DEG C, decomposition voltage is 20 ~ 190V as anode in the electrolytic solution by aluminium base, carries out anodic oxidation acquisition.
Preferably, described aluminium base thickness range is 0.2 ~ 0.5mm; Described aluminium base purity is not less than 99.99%.
Preferably, described electrolyte is sulfuric acid, oxalic acid or phosphoric acid.
Preferably, alumina formwork also comprises and is soaked in 5 ~ 120min in acid solution and carries out expanding treatment.
Preferably, described conductive is Cu, Au or Ag; Described conductive layer thickness is 100 ~ 500nm.
Preferably, in described three electrode deposition systems, reference electrode is saturated calomel electrode; Auxiliary electrode material is graphite or platinum; Alumina formwork described in work electrode.
Preferably, described nonmagnetic spacer layers material is Cu or Pt; Bottom electrode layer and/or described top electrode layer material are Au, Ag, Cu or Pt; Described intermediate isolating layer material is Cu or Pt.
Preferably, described first magnetosphere and/or the second magnetosphere are made up of the ferrimagnet of plane magnetization or perpendicular magnetization; Described ferromagnetic material is one or more combinations in Fe, Co, Ni, FeNi, CoFe, CoFeB, Co/Pt, Co/Pd, Co/Ni, Cu/Ni.
Preferably, described spinning microwave oscillator also comprises inverse ferric magnetosphere, and the first magnetosphere is formed on inverse ferric magnetosphere; Inverse ferric magnetosphere is preferably formed by antiferromagnetic alloy; Antiferromagnetic alloy at least selects any one or the two or more combinations of Fe-Mn, Pt-Mn, Ni-Mn.
The present invention also provides the structure of this spinning microwave oscillator, comprising: depositions of bottom electrode layer, at least one magnetoresistance effect, top electrode layer successively on the electrically conductive; Described magnetoresistance effect comprises the first magnetosphere, nonmagnetic spacer layers, the second magnetosphere that deposit successively.
Preferably, intermediate isolating layer is also comprised between two adjacent magnetoresistance effects.
The invention has the beneficial effects as follows:
One, preparation method of the present invention can in aluminium oxide nano through hole, the good spinning microwave oscillator of the homogeneity of self assembly high-sequential from bottom to top, and multiple nanometer spinning microwave oscillator can be deposited in same through hole, each spinning microwave oscillator nonmagnetic substance is isolated, form the nano wire containing multiple nanometer spinning microwave oscillator, increase the power output of device;
Two, each magnetic layer material of spinning microwave oscillator, thickness can freely regulate, reach the magnetospheric combination of different materials, different-thickness, the magnetic structures such as antiferromagnetic coupling structure, pinned magnetic layer plane magnetization or free magnetic layer perpendicular magnetization can be formed.
Accompanying drawing explanation
Preparation technology's flow chart that Fig. 1 (a) ~ (d) is embodiment of the present invention spinning microwave oscillator.
Fig. 2 is the structural representation of the embodiment of the present invention 2 spinning microwave oscillator.
Fig. 3 is the structural representation of the embodiment of the present invention 3 spinning microwave oscillator.
Fig. 4 is the structural representation of the embodiment of the present invention 4 spinning microwave oscillator.
Fig. 5 is the structural representation of the embodiment of the present invention 5 spinning microwave oscillator string.
Embodiment
Below, will elaborate to various embodiments of the present invention by reference to the accompanying drawings.
Embodiment 1
The spinning microwave oscillator that the present embodiment makes comprises the steps:
Steps A: as shown in Fig. 1 (a), on alumina formwork, preparation runs through the through hole of described alumina formwork front and back, and utilizes magnetron sputtering or electron beam evaporation to make conductive layer at the described alumina formwork back side.
First, porous alumina formwork 22 is made.
Getting thickness is 0.2mm, purity is the pre-treatments such as aluminium base annealed, the polishing of high-purity of 99.99%, remove sea surface oil slick, surperficial natural oxide thin layer etc., finally make aluminium base surface smoothing, be conducive to follow-up anodized and obtain size and the more uniform porous array of distribution.Then with platinum (Pt) for negative electrode, it is anode with aluminium base, control temperature is 0 ~ 10 DEG C, decomposition voltage is 40 ~ 50V, anodic oxidation 120min is carried out in the oxalic acid of 0.3mol/L, finally be formed with that thickness is about the Woelm Alumina 21 of 30um aluminium base 1, now, this Woelm Alumina 21 has the through hole 23. in some and aperture.
Described aluminium oxide 21 is first removed aluminium base 1 in saturated mercury chloride, then described aluminium oxide 21 front is evenly coated in PMMA, be soaked in 30 ~ 40 DEG C again, mass fraction is 20 ~ 40min in the phosphoric acid solution of 5%, carry out through hole process, obtaining aperture between 40 ~ 60nm runs through the through hole 23 of described aluminium oxide 21 front and back, forms the alumina formwork 22 with through hole 23.For the spinning microwave oscillator that ask for something is finer, the time that can reduce this alumina formwork expanding treatment does not more even carry out expanding treatment.
Finally, as shown in Fig. 1 (b), utilize magnetron sputtering coater band through hole 23 alumina formwork 22 back side plate a layer thickness be the copper of 100 ~ 300nm as conductive layer 3, described conductive layer 3 is for the negative electrode of this spinning microwave oscillator.
Step B: adopt three electrode deposition systems, makes spinning microwave oscillator.
Described three electrode deposition systems comprise: take saturated calomel electrode as reference electrode, and with Pt sheet for paving helps electrode, above-mentioned alumina formwork 22 is work electrode.Wherein, electroplate liquid is configured formed by copper chloride (0.005mol/L), cobalt chloride (0.5mol/L), boric acid (40g/L), then DC electrodeposition technology is adopted, controlling the layer by layer deposition of different metal layer on alumina formwork 22 in several through holes 23 by adjusting different deposition voltages, several spinning microwave oscillators can be formed in several through holes 23 simultaneously.
Shown in composition graphs 1 (c) He Fig. 1 (d), at an interior spinning microwave oscillator 4 of through hole 23, its structure comprises from bottom to top: bottom electrode layer 41, magnetoresistance effect 5 and top electrode layer 45; Wherein, described magnetoresistance effect 5 comprises the first magnetosphere 42, nonmagnetic spacer layers 43, second magnetosphere 44 from bottom to top.This spinning microwave oscillator 4 preparation process is as follows:
The first step deposits the thick Cu of 100nm as bottom electrode layer 41 under-0.5V deposition voltage;
Second step, described bottom electrode layer 41 forms magnetoresistance effect 5, namely
(1) under-1.1V deposition voltage, deposit the ferromagnetism Co of 10 ~ 25nm as the first magnetosphere 42, its magnetized state is perpendicular magnetization;
(2) adjusting deposition voltage is-0.5V, the first magnetosphere 42 deposits the thick Cu of 5 ~ 10nm as nonmagnetic spacer layers 43;
(3) adjusting deposition voltage is-1.1V, and nonmagnetic spacer layers 43 deposits the thick ferromagnetism Co of 5 ~ 10nm as the second magnetosphere 44, its magnetized state is plane magnetization.
Step C, finally continues in this three electrode depositions system, and adjustment deposition voltage is-0.5V, above-mentioned magnetoresistance effect 5 deposits the thick Cu of 100nm as top electrode layer 45, finally in a through hole 23, forms a spinning microwave oscillator 4.
Embodiment 2
The present embodiment and embodiment 1 difference are that the spinning microwave oscillator composition material of the present embodiment is different, and the parameter correspondingly in making step also adjusts to some extent.
For in steps A, alumina formwork and preparation parameter thereof adjust to some extent, high-purity aluminum-based be-1 ~ 0 DEG C, carry out anodic oxidation in 3wt% sulfuric acid solution under 20 ~ 25V decomposition voltage, after through hole process 10 ~ 30min, form aperture in 20 ~ 40nm multiaperture pellumina template, thickness is 10um.
Shown in Fig. 1 (b), adopt electron-beam vapor deposition method at alumina formwork backboard evaporation one deck Cu as conductive layer 3.
For step B, the electrode of three electrode deposition systems forms consistent with embodiment 1, and electroplate liquid is configured formed by copper sulphate (0.007mol/L), cobalt nitrate (0.1mol/L), nickelous sulfate (0.1mol/L), chloroplatinic acid (0.01mol/L), ammonium tartrate (0.02mol/L), boric acid (40g/L).Then adopt pulse deposition technique, under different deposition voltage, form the spinning microwave oscillator 4 of the present embodiment respectively, shown in its structure composition graphs 2, comprise bottom electrode layer 41, magnetoresistance effect 5 and top electrode layer 45 from bottom to top; Wherein, described magnetoresistance effect 5 comprises the first magnetosphere 42, nonmagnetic spacer layers 43, second magnetosphere 44 from bottom to top.The preparation process of this spinning microwave oscillator 4 is as follows:
Adjustment deposition voltage is-0.5V, conductive layer 3 deposits the thick Cu of 100nm as bottom electrode layer 41;
Adjustment deposition voltage deposited magnetic multilayer film 5, namely (1) is respectively under deposition voltage is-1.1V, 1.0V condition, deposits the Ni formation ferromagnetic layer 42c that the thick Co of 0.5nm forms ferromagnetic layer 42d and 1nm on described bottom electrode layer 41 surface from bottom to up successively.Ferromagnetic layer 42a and ferromagnetic layer 42b magnetized state are perpendicular magnetization, and they form the first magnetosphere 42 jointly.
(2) adjusting deposition voltage is-0.45V, the first magnetosphere 42 deposits the thick Pt of 4nm as nonmagnetic spacer layers 43;
(3) be-1.1V at deposition voltage again, nonmagnetic spacer layers 43 deposits the thick Co of 0.5nm as the second magnetosphere 44, meriting attention is design thinner Co layer and mainly ensure that it is perpendicular magnetization as the second magnetosphere.
Finally on the second magnetosphere 44, deposit top electrode layer 45.
All the other steps can refer to shown in embodiment 1.
Embodiment 3
The present embodiment and embodiment 1 difference are that the spinning microwave oscillator composition material of the present embodiment is different, and the parameter correspondingly in making step also adjusts to some extent.
For in steps A, alumina formwork and preparation parameter thereof adjust to some extent, high-purity aluminum-based be-1 ~ 0 DEG C, carry out anodic oxidation in 4wt% phosphoric acid solution under 160 ~ 190V decomposition voltage, after through hole process 30 ~ 60min, form the multiaperture pellumina template that through-hole aperture is 400nm, thickness is 20um.
Shown in Fig. 1 (b), plate the thick Cu of 200nm ~ 500nm at the described alumina formwork back side as conductive layer 3.
For step B, the electrode of three electrode deposition systems forms consistent with embodiment 1, and electroplate liquid forms primarily of the configuration of copper sulphate (0.05mol/L), nickelous sulfate (0.1mol/L), iron chloride (0.125mol/L), manganese sulfate (0.5 ~ 1.8mol/L), ammonium sulfate (0.3mol/L), gluconic acid sodium salt (0.2mol/L), boric acid (40g/L) and ascorbic acid (1g/L).Then adopt impulse electrodeposition technology, under different deposition voltage, form the spinning microwave oscillator 4 of the present embodiment respectively, shown in its structure composition graphs 3: comprise bottom electrode layer 41, magnetoresistance effect 5 and top electrode layer 45 from bottom to top; Wherein, described magnetoresistance effect 5 comprises the first magnetosphere 42, nonmagnetic spacer layers 43, second magnetosphere 44 from bottom to top.The preparation process of this spinning microwave oscillator 4 is as follows:
Adjustment deposition voltage is-0.5V, conductive layer 3 deposits the thick Cu of 100nm as bottom electrode layer 41;
Adjustment deposition voltage deposited magnetic multilayer film 5, namely, under (1) deposition voltage is respectively-1.4V, 1.2V condition, the Ni-Fe alloy of the thick Fe-Mn alloy of 10nm as antiferromagnetic layer 42d and 7nm is deposited from bottom to up successively on described bottom electrode layer 41 surface as ferromagnetic layer 42c.Ferromagnetic layer 42c and ferromagnetic layer 42d magnetized state are plane magnetization, and they form the first magnetosphere 42 jointly;
(2) adjusting deposition voltage is-0.5V, the first magnetosphere 42 deposits the thick Cu of 2nm as nonmagnetic spacer layers 43;
(3) adjusting deposition voltage is-1.2V, and nonmagnetic spacer layers 43 deposits the thick ferromagnetic alloy Ni-Fe of 10nm as the second magnetosphere 44, its magnetized state is plane magnetization.
Finally on the second magnetosphere 44, deposit top electrode layer 45.
All the other steps are with reference to shown in embodiment 1.
Embodiment 4
The present embodiment and embodiment 1 difference are that the spinning microwave oscillator composition material of the present embodiment is different, and the parameter correspondingly in making step also adjusts to some extent.
For in steps A, Woelm Alumina is first at 30 DEG C, reaming 20 ~ 50min in 5wt% phosphoric acid, then go in saturated mercury chloride aluminium base, be evenly coated in described aluminium oxide front with PMMA, 30 DEG C ~ 40 DEG C, carry out through hole process 20 ~ 50min in 5wt% phosphoric acid after, obtain the multiaperture pellumina template with aperture through hole between 70nm ~ 90nm, thickness is 10um.
Shown in Fig. 1 (b), plate the thick Cu of 200nm ~ 500nm at the described alumina formwork back side as conductive layer 3.
For step B, the electrode of three electrode deposition systems forms consistent with embodiment 1, and electroplate liquid forms primarily of copper nitrate (0.007mol/L), cobaltous sulfate (0.1mol/L), nickel chloride (0.1mol/L), iron chloride (0.125mol/L), ascorbic acid (1g/L), manganese sulfate (0.5 ~ 1.8mol/L), ammonium sulfate (0.1mol/L), gluconic acid sodium salt (0.3mol/L), boric acid configuration.Then adopt impulse electrodeposition technology, under different deposition voltage, form the spinning microwave oscillator 4 of the present embodiment respectively, shown in its structure composition graphs 4: comprise bottom electrode layer 41, magnetoresistance effect 5 and top electrode layer 45 from bottom to top; Wherein, described magnetoresistance effect 5 comprises the first magnetosphere 42, nonmagnetic spacer layers 43, second magnetosphere 44 from bottom to top.The preparation process of this spinning microwave oscillator 4 is as follows:
Adjustment deposition voltage is-0.5V, conductive layer 3 deposits the thick Cu of 100nm as bottom electrode layer 41;
Adjustment deposition voltage deposited magnetic stratified film 5, namely under (1) deposition voltage is respectively 1.4V, 1.15V condition, the Ni-Fe alloy formation ferromagnetic layer 42d that the thick Fe-Mn alloy of 10nm forms antiferromagnetic layer 42c and 7nm is deposited from bottom to up successively on described bottom electrode layer 41 surface, ferromagnetic layer 42c and ferromagnetic layer 42d magnetized state are plane magnetization, and they form the first magnetosphere 42 jointly;
(2) adjusting deposition voltage is-0.5V, the first magnetosphere 42 deposits the thick Cu of 3nm as nonmagnetic spacer layers 43;
(3) adjusting deposition voltage is 1.0V, and nonmagnetic spacer layers 43 deposits the thick ferromagnetic alloy Co of 0.8nm as the second magnetosphere 44, its magnetized state is perpendicular magnetization.
Finally on the second magnetosphere 44, deposit top electrode layer 45.
All the other steps are with reference to shown in embodiment 1.
Embodiment 5
The present embodiment and embodiment 1 difference are that the spinning microwave oscillator composition material of the present embodiment is different, and the parameter correspondingly in making step also adjusts to some extent.
For in steps A, Woelm Alumina is first at 30 DEG C, reaming 5 ~ 50min in 5wt% phosphoric acid, then go in saturated mercury chloride aluminium base, be evenly coated in described aluminium oxide front with PMMA, finally 30 ~ 40 DEG C, carry out through hole process 20 ~ 40min in 5wt% phosphoric acid, obtain the porous alumina formwork of through-hole aperture between 60nm ~ 100nm.
Shown in Fig. 1 (b), plate the thick Cu of 200nm ~ 500nm at the described alumina formwork back side as conductive layer 3.
For step B, the electrode of three electrode deposition systems forms consistent with embodiment 1, and electroplate liquid forms primarily of copper sulphate (0.005mol/L), nickel chloride (0.1mol/L), iron chloride (0.125mol/L), ascorbic acid (1g/L), manganese sulfate (0.5 ~ 1.8mol/L), ammonium sulfate (0.3mol/L), gluconic acid sodium salt (0.2mol/L), boric acid (40g/L) configuration.Then adopt impulse electrodeposition technology, under different deposition voltage, form the spinning microwave oscillator of the present embodiment respectively.In the present embodiment, in a through hole, form the spinning microwave oscillator of multiple series connection, as shown in Figure 5: comprise bottom electrode layer 41 from bottom to top, and on described bottom electrode layer 41 periodically the magnetoresistance effect 5 of repeated deposition and intermediate isolating layer 6; In the end magnetoresistance effect 5 top arranges top electrode layer 45 again.Each described magnetoresistance effect 5 comprises the first magnetosphere 42, nonmagnetic spacer layers 43, second magnetosphere 44 from bottom to top.The preparation process of this spinning microwave oscillator 4 is as follows:
Adjustment deposition voltage is-0.5V, conductive layer 3 deposits the thick Cu of 100nm as bottom electrode layer 41;
Adjustment deposition voltage deposited magnetic multilayer film 5 in end battery layers 41, every layer of magnetoresistance effect 5 comprises under (1) be respectively 1.3V, 1.2V condition, the Ni-Fe alloy formation ferromagnetic layer 42c that the thick Ni-Mn alloy of 30nm forms antiferromagnetic layer 42d and 7nm is deposited from bottom to up successively on described bottom electrode layer 41 surface, ferromagnetic layer 42c and ferromagnetic layer 42d magnetized state are plane magnetization, and they form the first magnetosphere 42 jointly;
(2) adjusting deposition voltage at the first magnetosphere 42 is deposit the thick Cu of 2nm as nonmagnetic spacer layers 43;
(3) adjust deposition voltage again and on nonmagnetic spacer layers 43, deposit the thick ferromagnetic alloy Ni-Fe of 10nm as the second magnetosphere 44, its magnetized state is plane magnetization.
Before the next magnetoresistance effect 5 of deposition, adjustment deposition voltage is-0.5V, at the thick Cu of front one deck second magnetosphere 44 surface deposition 100nm as intermediate isolating layer 6.
Then periodically repeated deposition magnetoresistance effect 5, intermediate isolating layer 6 like this, totally 6 times, in the end a magnetoresistance effect 5 complete after deposition top electrode layer 45, obtain the spinning microwave oscillator nano wire being formed and be made up of multiple nanometer spin oscillator thus, greatly can improve the power output of spinning microwave oscillator.
All the other steps are with reference to shown in embodiment 1.
Method of the present invention can the good spinning microwave oscillator array of homogeneity of self assembly high-sequential from bottom to top, and multiple nanometer spinning microwave oscillator can be deposited in same through hole, each nanometer spinning microwave oscillator nonmagnetic substance is isolated, form the nano wire containing multiple nanometer spinning microwave oscillator, increase the power output of device; Two, each magnetic layer material of nanometer spinning microwave oscillator, thickness are free to regulate, reach the magnetospheric combination of different materials, different-thickness, the magnetic structures such as antiferromagnetic coupling structure, pinned magnetic layer plane magnetization or free magnetic layer perpendicular magnetization can be formed, there is the scope of application widely.
Claims (8)
1. a preparation method for spinning microwave oscillator, is characterized in that, comprises the steps:
Steps A. on alumina formwork, preparation runs through the through hole of described alumina formwork front and back, and utilizes magnetron sputtering or electron beam evaporation to make conductive layer at the described alumina formwork back side; Described alumina formwork is that control temperature is-5 ~ 20 DEG C, decomposition voltage is 20 ~ 190V as anode in the electrolytic solution by aluminium base, carries out anodic oxidation acquisition; Alumina formwork also comprises and is soaked in 5 ~ 120min in acid solution and carries out expanding treatment;
Step B. adopts three electrode deposition systems depositions of bottom electrode layer, magnetoresistance effect, top electrode layer successively from bottom to up in described through hole; Wherein, described magnetoresistance effect comprises the first magnetosphere, nonmagnetic spacer layers, the second magnetosphere that deposit successively from bottom to up;
Magnetoresistance effect described in repeated deposition n time, n is the natural number of be not more than 300; And, be also provided with an intermediate isolating layer between magnetoresistance effect between two;
In described three electrode deposition systems, reference electrode is saturated calomel electrode; Auxiliary electrode material is graphite or platinum; Work electrode is described alumina formwork.
2. spinning microwave oscillator preparation method according to claim 1, it is characterized in that, described through-hole aperture scope is 20 ~ 400nm; Described alumina formwork thickness is 20 ~ 30um.
3. spinning microwave oscillator preparation method according to claim 2, it is characterized in that, described aluminium base thickness range is 0.2 ~ 0.5mm; Described aluminium base purity is not less than 99.99%.
4. spinning microwave oscillator preparation method according to claim 2, it is characterized in that, described electrolyte is sulfuric acid, oxalic acid or phosphoric acid.
5. spinning microwave oscillator preparation method according to claim 1, it is characterized in that, described conductive is Cu, Au or Ag; Described conductive layer thickness is 100 ~ 500nm.
6. spinning microwave oscillator preparation method according to claim 1, it is characterized in that, described nonmagnetic spacer layers material is Cu or Pt; Bottom electrode layer and/or described top electrode layer material are Au, Ag, Cu or Pt; Described intermediate isolating layer material is Cu or Pt.
7. spinning microwave oscillator preparation method according to claim 1, it is characterized in that, described first magnetosphere and/or the second magnetosphere are made up of the ferrimagnet of plane magnetization or perpendicular magnetization; Described ferromagnetic material is one or more combinations in Fe, Co, Ni, FeNi, CoFe, CoFeB, Co/Pt, Co/Pd, Co/Ni, Cu/Ni.
8. spinning microwave oscillator preparation method according to claim 1, it is characterized in that, also comprise inverse ferric magnetosphere, the first described magnetosphere is formed on inverse ferric magnetosphere; Inverse ferric magnetosphere is preferably formed by antiferromagnetic alloy; Antiferromagnetic alloy at least selects any one or the two or more combinations of Fe-Mn, Pt-Mn, Ni-Mn.
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| CN106252503B (en) * | 2015-06-15 | 2019-03-19 | 中国科学院物理研究所 | Hyperfrequency spinning microwave oscillator based on antiferromagnet |
| CN106921105B (en) * | 2015-12-24 | 2019-04-30 | 中国科学院物理研究所 | Terahertz signal generator based on spin oscillator |
| CN111030637B (en) * | 2019-12-13 | 2023-06-23 | 电子科技大学 | Multi-frequency-spectrum integrated spin nano-oscillator for 5G communication and preparation method thereof |
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| JP2005193117A (en) * | 2004-01-06 | 2005-07-21 | National Institute For Materials Science | Magnetic filter |
| CN102324302A (en) * | 2011-06-13 | 2012-01-18 | 郑州大学 | Preparation method of super capacitor based on one-dimensional metal-carbon nano tube coaxial heterojunction |
| CN102637939A (en) * | 2012-04-28 | 2012-08-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Spinning microwave oscillator based on vertical magnetizing free layer and manufacturing method thereof |
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| JP2005193117A (en) * | 2004-01-06 | 2005-07-21 | National Institute For Materials Science | Magnetic filter |
| CN102324302A (en) * | 2011-06-13 | 2012-01-18 | 郑州大学 | Preparation method of super capacitor based on one-dimensional metal-carbon nano tube coaxial heterojunction |
| CN102637939A (en) * | 2012-04-28 | 2012-08-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Spinning microwave oscillator based on vertical magnetizing free layer and manufacturing method thereof |
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