CN103325815B - Organic luminescent device and the method manufacturing organic luminescent device - Google Patents
Organic luminescent device and the method manufacturing organic luminescent device Download PDFInfo
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- CN103325815B CN103325815B CN201310242467.2A CN201310242467A CN103325815B CN 103325815 B CN103325815 B CN 103325815B CN 201310242467 A CN201310242467 A CN 201310242467A CN 103325815 B CN103325815 B CN 103325815B
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Abstract
The invention discloses a kind of organic luminescent device and the method manufacturing organic luminescent device, this organic luminescent device includes: gate electrode；Insulating barrier, is arranged on gate electrode；Active layer, is arranged on the insulating layer, and this active layer includes the source region in its periphery, channel region between the drain region of part at its center and source region and drain region；Organic luminous layer, is positioned on this drain region；Drain electrode, is positioned on this organic luminous layer；And source electrode, it is positioned at this source region.The solution of the present invention, it is possible to integrate switching device and luminescent device, add aperture opening ratio, is conducive to improving the contrast of display device, and processing technology is simple, and production cost is low, and the most compatible flexible base board of energy has the highest using value.
Description
Technical field
The present invention relates to OLED(Organic Light-Emitting Diode, Organic Light Emitting Diode)
With OTFT(Organic Thin Film Transistor, organic film FET) carry out integrated
Device.
Background technology
OTFT and OLED is the Liang great technology branch in organic electronics field, and OLED is answered
For fields such as display and illuminations, OTFT also has the feature of uniqueness as switching device, and will have very much can
Conventional inorganic TFT can be replaced.OTFT had not only had electrology characteristic but also had possessed optical characteristics and also had multiple
Unique physical characteristic, and relatively inexpensive technique can be used to prepare, such as typography, coating
Technique etc., can prepare with large area.And organic semiconductor has excellent pliability, can be best hold concurrently
Hold flexible substrate.So OTFT, OLED will become the optimal candidate of flexible electronic product of future generation
Technology.
At existing AMOLED(Active Matrix/Organic Light Emitting Diode, active
Matrix organic LED panel) in Display Technique, need to use TFT active array to drive OLED
Luminescence and shutoff, each OLED is required for connecting TFT as driving element, it is provided that to OLED
Electric current required for luminescence.And need first to build tft array on the glass substrate during building,
Preparing OLED luminescent device the most again, its manufacturing process is complicated.Production cost is higher, and picture element density is also
It is difficult to improve further.
Summary of the invention
In view of the problems referred to above and/or the other problems of prior art, the invention provides a kind of organic illuminator
Part and the method manufacturing organic luminescent device.
A kind of organic luminescent device that the present invention provides, including:
Gate electrode；
Insulating barrier, is arranged on gate electrode；
Active layer, is arranged on the insulating layer, and this active layer includes being positioned at the source region of its periphery, being located therein
Channel region between drain region and source region and the drain region of heart part；
Organic luminous layer, is positioned on this drain region；And
Drain electrode, is positioned on this organic luminous layer；And
Source electrode, is positioned at this source region.
The method manufacturing organic luminescent device that the present invention provides, including:
Substrate is formed gate electrode；
Gate electrode is formed insulating barrier；
Being formed with active layer on which insulating layer, this active layer includes being positioned at the source region of its periphery, being located therein
Channel region between drain region and source region and the drain region of heart part；
Source electrode is formed in this source region；
This drain region is formed organic luminous layer；
Drain electrode is formed on luminescent layer.
The present invention by scheme integrated to Organic Light Emitting Diode and thin film transistor (TFT), it is possible to collection switching device
With luminescent device in one, add aperture opening ratio, be conducive to improving the contrast of display device, and make
Technique is simple, and production cost is low, the most compatible flexible base board of energy, has the highest using value.
Accompanying drawing explanation
Fig. 1 a is the generalized section of the organic luminescent device according to one embodiment of the invention；
Fig. 1 b is the generalized section of the organic luminescent device according to another embodiment of the present invention；
Fig. 2 show the top view of the organic luminescent device of Fig. 1 a；
Fig. 3 show the operating diagram of integrated device.
Detailed description of the invention
It is described more fully with example embodiment referring now to accompanying drawing.But, example embodiment can
Implement in a variety of forms, and be not understood as limited to embodiment set forth herein；On the contrary, it is provided that this
A little embodiments make the disclosure will fully and completely, and the design of example embodiment are passed on all sidedly
To those skilled in the art.In the drawings, in order to clearly, exaggerate the thickness of region and layer.In the drawings
Identical reference represents same or similar structure, thus will omit their detailed description.
Additionally, described feature, structure or characteristic can be combined in any suitable manner one or
In more embodiments.In the following description, it is provided that many details thus provide reality of this disclosure
Execute fully understanding of example.It will be appreciated, however, by one skilled in the art that the technology of the disclosure can be put into practice
Scheme and do not have in described specific detail one or more, or can use other method, constituent element,
Material etc..In other cases, known features, material or operation are not shown in detail or describe to avoid
The each side of the fuzzy disclosure.
OTFT and OLED is integrated on a device by the present invention, realizes TFT on single device
Electric current drives OLED luminous.
See Fig. 1 a and show the sectional view of integrated device according to an embodiment of the present invention, shown in Fig. 2
Top view for this integrated device.Referring to integrated to according to this example embodiment of Fig. 1 a and Fig. 2
Device illustrates.
Integrated device according to example embodiment include substrate 1, the gate electrode 2 being arranged on this substrate 1,
The insulating barrier 3 that is arranged on gate electrode 2, it is arranged on active layer 4 on this insulating barrier 3, is arranged on active layer
Source electrode 5 on 4, be arranged on luminescent layer on active layer 4 and between two source electrodes 5 (EML:
Emission layer) 61, electron transfer layer (ETL:electron transportation layer) 62, electricity
Sub-implanted layer (EIL:electron injection layer) 63 and drain electrode 64.
Substrate 1 can be glass substrate or flexible base board.
Gate electrode 2 material can be but not limited to indium tin metal oxide (ITO), and Al, Mo,
The metal materials such as Ag, or the material such as Graphene.
Insulating barrier 3 can be to include SiO2、SiNx、Al2O3In the inorganic insulation layer of one or more,
Or include polyvinyl alcohol (Polyvinyl Alcohol, PVA), polymethyl methacrylate
(Poly (methyl methacrylate)), PMMA), polystyrene (Polystyrene, PS),
The organic insulation of one or more in polyvinylpyrrolidone (Polyvinylpyrrolidone, PVP)
Layer, or include the laminated construction of at least two inorganic insulation layer, or include that at least two is organic
The laminated construction of insulating barrier, or include at least one inorganic insulation layer and at least one organic insulator
Laminated construction.
Active layer 4 for example, p-type organic semiconductor layer, this active layer 4 serves as the hole of OLED simultaneously
Transport layer (HTL:Hole Transport Layer).
Active layer 4 can be such as by having that organic small molecule material or organic molecule dopant material are formed
The little molecular layer of machine, or by organic polymer material or by organic polymer dopant material formed organic
Polymeric layer, or by the laminated construction that at least two-layer organic molecule layer is formed, or by least two-layer
The laminated construction that organic polymer layers is formed, or organic poly-by least one organic molecule layer and at least one
The laminated construction that compound layer is formed.
Active layer 4 at least includes that drain region 6a and channel region 7a, drain region 6a are positioned at the central part of active layer 4
Point, channel region 7a is in drain region 6a periphery and between drain region 6a and source region 5a, and source region 5a sets
Putting the periphery at channel region 7a, it is used for being formed source electrode 5, and source electrode 5 connects with active layer 4, its
Set-up mode can be not limited to following two mode to use: as shown in Figure 1a, source electrode 5 can be arranged
On active layer 4；Or as shown in Figure 1 b, source electrode 5 can also be arranged on the periphery of active layer 4.
In an embodiment of the present invention, source region 5a, drain region 6a and channel region 7a can use as shown in Figure 2
Square configuration, but the invention is not restricted to this.
Source electrode 5 is positioned at source region 5a.Luminescent layer (EML:emission layer) 61, electron transfer layer
(ETL:electron transportation layer) 62, electron injecting layer (EIL:electron injection
Layer) 63 and drain electrode 64 be stacked on the 6a of drain region.Drain electrode 64 doubles as the cathode layer of OLED.
Wherein, the material of luminescent layer can be chosen: ADN, TCTA, BCP, CBP, dopant:FIrpic,
Ir(MDQ) 2 (acac), Ir (ppy) 3, C545, Bcvbi and TBPe etc.；The material of electron transfer layer
Can choose: Alq3, TPBi, Bphen and LiQ etc.；The material of electron injecting layer can choose LiF；
The material of hole transmission layer can be chosen: NPB, TPD, F4TCNQ, CuPc, Benzo[b and MTDATA
Deng；The material of hole injection layer can be chosen: MoO3, WO3, CFx, CuPc and F4TCNQ etc..
Source electrode 5 such as can be by being that at least one in Au, Mg, Ca, Ag, Al, Cu is formed
Metal level.Source electrode 5 can also be to include the laminated construction of two or more metal level.If active layer
P-type semiconductor material, then source electrode 5 select work function be higher than 4.3eV single metal material or
Alloy；If active layer is N-type semiconductor material, then source electrode 5 selects work function to be less than the gold of 4.3eV
Belong to material or alloy.
Drain electrode 64 such as can be formed by metal material, including: Al, Ag, Mg, Ca, Mg or
Ag alloy etc..
The structure of the organic luminescent device according to the disclosure one embodiment depicted above, but the disclosure is not
It is limited to this.Such as, active layer 4 can be N-channel active layer, and other layer can correspondingly be arranged.
Other layer can be arranged in accordingly on N-type active layer and set gradually EML, HTL, HIL and metal sun
Pole.
It addition, the foregoing describe bottom grating structure, but the disclosure is not limited to this.Such as, the disclosure also can be answered
For top gate structure.
Organic luminescent device according to the disclosure can be that the end is luminous, top is luminous and bidirectional luminescence structure.Send out
Light direction according to gate electrode and negative electrode the most transparent depending on.
The operation principle of the integrated device of the example embodiment according to the disclosure is described referring to Fig. 3.
Seeing Fig. 3, according to the device of example embodiment when being energized work, gate electrode 2 applies negative sense
Bias, source electrode 5 applies forward bias, negative electrode (drain electrode) 64 applies negative bias.So, OLED
Negative electrode 64 injects electronics, enters EML61 through EIL63, ETL62.Source electrode injects hole, warp
HTL(i.e. active layer 4) enter EML61.Electronics and hole are compound at EML61, thus launch
Light.The turn-on and turn-off of this integrated device of Control of Voltage of gate electrode 2, and by gate voltage and gate capacitance
The carrier concentration (being similar to the function of the gate capacitance of TFT) of regulation and control active layer 4.Such as, when grid electricity
It is timing that pole 2 does not apply the voltage of voltage or applying, and this integrated device i.e. turns off.
The manufacture method of the integrated device according to example embodiment is described below.
First, by the method shape such as magnetron sputtering or vapour deposition on glass substrate or flexible base plate 1
Become gate electrode 2.The material of gate electrode 2 can be but not limited to indium tin metal oxide (ITO), and
The metal materials such as Al, Mo, Ag, or the material such as Graphene.
Then, gate electrode 2 is formed with gate insulation layer 3.This gate insulation layer 3 can be SiO2、SiNx、
Al2O3Deng the inorganic insulation layer of structure, or organic polymer insulating barrier.This gate insulation layer 3 is permissible
Use monolayer or the structure of multilamellar.When insulating barrier 3 is inorganic material, can use such as
PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical
Vapour deposition process) technique formation.When insulating barrier 3 is organic polymer, it would however also be possible to employ such as spin coating work
Skill is formed.
Then, organic semiconducting materials is prepared by this gate insulation layer 3 to be formed with active layer 4.This is active
Layer 4 had both served as the HTL(Hole Transport Layer of OLED；Hole transmission layer) layer, serves as again
The active layer of OTFT.Such as, this active layer 4 can use p-type organic semiconducting materials to prepare, shape
Become P-channel active layer.Active layer 4 can use evaporation, be coated with, the technique such as printing is formed.
By the way of being such as deposited with or printing, source electrode is formed in active layer 4 periphery.At active layer 4
Core on formed drain electrode structure 6.This drain electrode structure 6 include successively on active layer 4 EML61,
ETL62, EIL63 and drain electrode 64.This drain electrode 64 doubles as the negative electrode of OLED.Drain electrode structure 6
Can be formed by utilizing evaporation process or the printing/typography of mask etc..
As a example by Fig. 2, describe structure and the operation principle of the organic luminescent device of this case above, need
Bright is.Active layer 4 in the organic luminescent device of this case is alternatively n-type organic semiconductor layer, compares
OLED part in the device shown in Fig. 2, the organic luminescent device of the type is inverted structure,
This active layer 4 serves as the electron transfer layer (ETL:electron Transport Layer) of OLED simultaneously,
EML, HTL, hole injection layer (HIL:Hole injection layer) is sequentially formed above active layer 4
And metal anode layer.When energising work, gate electrode applying forward bias, source electrode applying negative bias,
Anode (drain electrode) applies forward bias.Thus OLED anode 64 injects hole, through HIL, HTL
Enter EML.Source electrode injects electronics, through ETL(i.e. active layer 4) enter EML.Electronics and sky
Cave is compound at EML, thus launches light.
Present invention achieves OLED and OTFT to be integrated on a device.Owing to driving TFT and OLED
It is integrated on a device, can reduce and take up room, increase aperture opening ratio.Such as, for AMOLED
(Active Matrix Organic Light Emitting Diode, active matrix organic light-emitting diode) shows
For showing panel, in order to realize higher aperture opening ratio, the most always need to reduce shared by TFT
Area, and increase OLED area, thus increase displayable region.Knot selected by the present invention
Structure, is not only integrated in TFT and OLED on a device, and decreases mono-electrode institute of TFT
The area taken.And, the area of this part is shared with OLED light-emitting zone, i.e. be appreciated that
Use for the area of TFT is shared to OLED, be remarkably improved the aperture opening ratio of display pixel.
If being designed to this structure for traditional TFT, although say the width that can increase effective raceway groove
Degree, thus increase drain current IDBut, but can increase the area used by TFT, also will sacrifice out
Mouth rate.And the integrated device of the present invention can have both concurrently, not only increase channel width, increase large-drive-current,
Aperture opening ratio can be increased again.
Additionally, source region, drain region and channel region are designed as enclosed by the present invention.Under this configuration, ditch
Road district is around drain region, it is possible to achieve drive electric current to maximize, and the most just can realize luminosity and maximize.
It addition, device turn off time can to gate electrode apply forward bias, can by completely depleted for hole in htl layer,
OLED is complete switched off, it is achieved brightness minimizes.So, the contrast of display device can be improved
Degree, improves the PPI of pixel, is conducive to preparing the display device of higher PPI.
The integrated device of the present invention can realize end luminescence, top luminescence and bidirectional luminescence, and light emission direction is according to grid
Electrode and drain electrode (negative electrode or anode) the most transparent depending on.The quasiconductor material that this integrated device is used
Material is organic material, is particularly well-suited to flexible display device.
In summary, the Organic Light Emitting Diode of the present invention and the integrated scheme of thin film transistor (TFT), it is possible to collection
Switching device and luminescent device are in one.Add aperture opening ratio, be conducive to improving the contrast of display device.
It addition, processing technology is simple, production cost is low, can preferably compatible flexible base board, have the highest should
By value.
Artisan will appreciate that without departing from the basis disclosed in appended claims of the invention
The change made in the case of the scope and spirit of invention and retouching, all belong to the guarantor of the claim of the present invention
Within the scope of protecting.
Claims (25)
1. an organic luminescent device, it is characterised in that including:
Substrate；
Gate electrode, is arranged on the substrate；
Insulating barrier, is arranged on gate electrode；
Active layer, is arranged on the insulating layer, and described active layer includes drain region and channel region, described channel region
It is positioned at described drain region peripheral to surround described drain region；
Drain electrode structure, is arranged in the described drain region on described active layer；And
Source electrode, is arranged on described active layer periphery and forms enclosed construction, and surround described drain electrode structure,
Wherein said channel region is between described source electrode and described drain region.
Organic luminescent device the most according to claim 1, it is characterised in that described drain electrode structure bag
Include:
Luminescent layer, is placed on described active layer；
Electron transfer layer, is arranged on described luminescent layer；
Electron injecting layer, is arranged on described electron transfer layer；And
Drain electrode, is arranged on described electron injecting layer.
Organic luminescent device the most according to claim 1, it is characterised in that this source electrode is arranged on
On this active layer.
Organic luminescent device the most according to claim 1, it is characterised in that described source electrode and institute
State active layer to be co-located on described insulating barrier and all with described insulating barrier and contact.
Organic luminescent device the most according to claim 1, it is characterised in that this gate electrode is indium stannum
Metal-oxide, Al, Mo, Ag or grapheme material.
Organic luminescent device the most according to claim 1, it is characterised in that this insulating barrier is SiO2、
SiNx、Al2O3Or organic polymer.
Organic luminescent device the most according to claim 1, it is characterised in that this insulating barrier uses single
Layer or the structure of multilamellar.
Organic luminescent device the most according to claim 1, it is characterised in that this active layer is P
Type or N-type organic semiconducting materials.
Organic luminescent device the most according to claim 8, it is characterised in that this active layer is by having
The organic molecule layer that machine small molecule material or organic molecule dopant material are formed, or include at least
The laminated construction of organic molecule layer described in two-layer.
Organic luminescent device the most according to claim 8, it is characterised in that this active layer be by
Organic polymer material or the organic polymer layers formed by organic polymer dopant material, or include
At least laminated construction of organic polymer layers described in two-layer.
11. organic luminescent devices according to claim 8, it is characterised in that this active layer passes through
It is deposited with, is coated with or prints technique formation.
12. organic luminescent devices according to claim 2, it is characterised in that this luminescent layer, should
Electron transfer layer, this electron injecting layer and/or this drain electrode are by evaporation process, coating or typography
Formed.
13. organic luminescent devices according to claim 1, it is characterised in that this substrate is glass
Substrate or flexible base board.
14. organic luminescent devices according to claim 1, it is characterised in that source electrode by be Au,
The metal level that at least one in Mg, Ca, Ag, Al, Cu is formed, or include two or more
The laminated construction of metal level.
15. organic luminescent devices according to claim 14, it is characterised in that tie at described lamination
In structure, at least one of which includes that work function is less than the metal of 4.3eV, at least another layer and includes that work function is higher than
The metal of 4.3eV.
16. 1 kinds of methods manufacturing organic luminescent device, it is characterised in that including:
Substrate is formed gate electrode；
Gate electrode is formed insulating barrier；
It is formed with active layer on which insulating layer；And
Form source electrode in described active layer periphery, described active layer middle position forms drain electrode structure, makes
Described source electrode surrounds described drain electrode structure.
17. methods according to claim 16, it is characterised in that in described active layer middle position
The step forming drain electrode structure includes:
Described active layer is formed luminescent layer；
Form electron transfer layer on the light-emitting layer；
Form electron injecting layer on the electron transport layer；And
Described electron injecting layer is formed drain electrode.
18. methods according to claim 17, it is characterised in that described active layer is partly led by organic
Body material is formed.
19. methods according to claim 17, it is characterised in that described insulating barrier is for including SiO2、
SiNx、Al2O3At least one inorganic insulation layer, or be organic polymer insulating barrier.
20. methods according to claim 17, it is characterised in that described insulating barrier be monolayer or
Multilamellar.
21. methods according to claim 17, it is characterised in that described insulating barrier uses PECVD
Technique is formed.
22. methods according to claim 17, it is characterised in that described insulating barrier is organic polymer
Thing, and use spin coating proceeding to be formed.
23. methods according to claim 17, it is characterised in that described active layer employing evaporation,
Coating or typography are formed.
24. methods according to claim 17, it is characterised in that also include: formed described in being positioned at
Hole transport layer between luminescent layer and described drain electrode and hole injection layer.
25. methods according to claim 17, it is characterised in that described active layer is formed at part
On described insulating barrier, and described source electrode is also formed on described insulating barrier and simultaneously with described insulating barrier and
Described active layer contacts.
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| CN201310242467.2A CN103325815B (en) | 2013-05-31 | 2013-06-18 | Organic luminescent device and the method manufacturing organic luminescent device |
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| CN103606535B (en) * | 2013-11-26 | 2016-01-06 | 深圳市华星光电技术有限公司 | The manufacture method of flexible display assembly and the flexible display assembly of making thereof |
| CN107968102A (en) * | 2016-10-19 | 2018-04-27 | 敦泰电子股份有限公司 | Organic LED panel and its manufacture method |
| CN116390517B (en) * | 2023-04-18 | 2023-09-19 | 北京高德品创科技有限公司 | Perovskite light-emitting transistor and preparation method thereof |
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| CN1717133A (en) * | 2004-06-29 | 2006-01-04 | 三星Sdi株式会社 | Method for producing organic light emitting display and display produced by said method |
| CN101075662A (en) * | 2007-06-05 | 2007-11-21 | 北京交通大学 | Vertical field effect light-emitting tube with soruce electrode on bottom and its production |
| CN101790791A (en) * | 2007-08-30 | 2010-07-28 | 出光兴产株式会社 | Organic Thin Film Transistor and Organic Thin Film Light Emitting Transistor |
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| US6946677B2 (en) * | 2002-06-14 | 2005-09-20 | Nokia Corporation | Pre-patterned substrate for organic thin film transistor structures and circuits and related method for making same |
| TWI287872B (en) * | 2003-07-18 | 2007-10-01 | Au Optronics Corp | Structure of active-driving type organic electroluminescence display |
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| CN1717133A (en) * | 2004-06-29 | 2006-01-04 | 三星Sdi株式会社 | Method for producing organic light emitting display and display produced by said method |
| CN101075662A (en) * | 2007-06-05 | 2007-11-21 | 北京交通大学 | Vertical field effect light-emitting tube with soruce electrode on bottom and its production |
| CN101790791A (en) * | 2007-08-30 | 2010-07-28 | 出光兴产株式会社 | Organic Thin Film Transistor and Organic Thin Film Light Emitting Transistor |
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Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |