CN103320133A - Water-phase preparation method of ZnSe:Ag quantum dots - Google Patents
Water-phase preparation method of ZnSe:Ag quantum dots Download PDFInfo
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical class [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000002096 quantum dot Substances 0.000 claims abstract description 25
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 12
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims abstract description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000008346 aqueous phase Substances 0.000 claims abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
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- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 6
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
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- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
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Abstract
本发明是涉及一种ZnSe:Ag量子点的水相制备方法,属复合纳米微晶材料技术领域。本发明的制备方法是:首先利用硼氢化钠(NaBH4)和硒粉反应制备硒氢化钠(NaHSe),然后将硒氢化钠注入到用氢氧化钠调节好pH的硝酸锌/3-巯基丙酸溶液中,两者反应生成淡黄棕色透明的ZnSe:Ag量子点溶液。本发明所得产物分散均匀、稳定性好、团聚少;它可应用于生物荧光标记、药物分离和一些光电器件领域。
The invention relates to an aqueous phase preparation method of ZnSe:Ag quantum dots, and belongs to the technical field of composite nanocrystal materials. The preparation method of the present invention is as follows: firstly, sodium borohydride (NaBH 4 ) and selenium powder are used to react to prepare sodium selenium hydride (NaHSe), and then sodium selenium hydride is injected into zinc nitrate/3-mercaptopropane whose pH has been adjusted with sodium hydroxide. In the acid solution, the two react to form a light yellow-brown transparent ZnSe:Ag quantum dot solution. The product obtained by the invention has uniform dispersion, good stability and less agglomeration; it can be applied to the fields of biological fluorescence labeling, drug separation and some photoelectric devices.
Description
技术领域 technical field
本发明涉及一种ZnSe:Ag量子点的水相制备方法,属于复合纳米微晶材料技术领域。 The invention relates to a water-phase preparation method of ZnSe:Ag quantum dots, belonging to the technical field of composite nano-microcrystalline materials.
背景技术 Background technique
ZnSe是一种重要的直接带隙Ⅱ-Ⅵ族半导体发光材料,为闪锌矿结构,属面心立方晶体,有较宽的带隙(2.8eV)和较大的结合能(21meV),在室温下禁带宽度直接跃迁发光波长在蓝紫光范围内。对波长范围为0.5-22μm的光具有良好透射性能,基本覆盖可见-红外波段范围,并且材料毒性低,适用于光电器件,生物探测,标记和成像等领域。 ZnSe is an important direct bandgap Ⅱ-Ⅵ group semiconductor luminescent material. It is a sphalerite structure and a face-centered cubic crystal with a wide bandgap (2.8eV) and a large binding energy (21meV). At room temperature, the band gap directly transitions to a luminescent wavelength in the range of blue-violet light. It has good transmission performance for light with a wavelength range of 0.5-22 μm, basically covers the visible-infrared range, and has low material toxicity. It is suitable for optoelectronic devices, biological detection, marking and imaging and other fields.
要实现ZnSe在光电和生物领域内的广泛应用,必须获得量子产率高并且发光稳定的ZnSe材料,ZnSe量子点本身发光强度差,量子产率低,掺杂可以提高ZnSe量子点的发光强度。通过有效的掺杂能够改变原材料的能带,引入杂质能级,进而改变材料的荧光特性,调节其荧光发射光谱,提高荧光效率。 To realize the wide application of ZnSe in optoelectronic and biological fields, it is necessary to obtain ZnSe materials with high quantum yield and stable luminescence. ZnSe quantum dots have poor luminous intensity and low quantum yield. Doping can improve the luminous intensity of ZnSe quantum dots. Through effective doping, the energy band of the raw material can be changed, and the energy level of impurities can be introduced, thereby changing the fluorescence characteristics of the material, adjusting its fluorescence emission spectrum, and improving the fluorescence efficiency.
目前对ZnSe量子点的掺杂主要集中在Cu和Mn元素,而对Ag的掺杂的研究则是空白。但ZnSe:Cu和ZnSe:Mn的稳定性较差,一般保存7天左右即出现沉淀。本发明专利采用Ag元素的掺杂,填补了国内外有关ZnSe量子点Ag掺杂的空白,并且在提高发光强度和量子产率的同时有效地提高了ZnSe掺杂量子点的稳定性。 At present, the doping of ZnSe quantum dots mainly focuses on Cu and Mn elements, while the research on Ag doping is blank. However, the stability of ZnSe: Cu and ZnSe: Mn is poor, and precipitation usually occurs after about 7 days of storage. The patent of the present invention adopts the doping of Ag element, which fills the blank of Ag doping of ZnSe quantum dots at home and abroad, and effectively improves the stability of ZnSe doped quantum dots while improving the luminous intensity and quantum yield.
水相合成的Ag掺杂纳米材料是在分散剂的作用下,让Zn源、Se源和一定量的Ag源在碱性环境下反应生成ZnSe:Ag量子点溶液。与传统的油相制备工艺相比,水相工艺操作简单、容易控制、反应温度低,得到的样品溶于水,生物兼容性好。 The Ag-doped nanomaterials synthesized in the aqueous phase are under the action of a dispersant, allowing Zn source, Se source and a certain amount of Ag source to react in an alkaline environment to form a ZnSe:Ag quantum dot solution. Compared with the traditional oil-phase preparation process, the water-phase process is simple to operate, easy to control, and has a low reaction temperature. The obtained samples are soluble in water and have good biocompatibility.
发明内容 Contents of the invention
本发明的目的在于提供一种制备荧光强度高、发光稳定、毒性低的ZnSe:Ag量子点的方法。 The object of the present invention is to provide a method for preparing ZnSe:Ag quantum dots with high fluorescence intensity, stable luminescence and low toxicity.
本发明为一种Ag掺杂的ZnSe量子点的水相制备方法,实验采用生长掺杂的方式,将掺杂质Ag加在锌源中。其特征在于具有以下的制备过程和步骤: The invention relates to a water-phase preparation method of Ag-doped ZnSe quantum dots. The experiment adopts the growth doping method, and the dopant Ag is added to the zinc source. It is characterized in that it has the following preparation process and steps:
a. 100ml梨形瓶中,通入氮气约30min后,依次加入0.8mmolNaBH4、0.2mmol硒粉(Se)和2ml去离子水;然后将梨形瓶在氮气保护下反应1h,待黑色硒粉全部消失,生成无色透明澄清溶液Ⅰ,即NaHSe溶液;化学反应方程式为: a. In a 100ml pear-shaped bottle, after passing nitrogen for about 30 minutes, add 0.8mmol NaBH 4 , 0.2mmol selenium powder (Se) and 2ml deionized water in sequence; then react the pear-shaped bottle under nitrogen protection for 1 hour, and wait for the black selenium powder All disappear, forming a colorless transparent clear solution I, namely NaHSe solution; the chemical reaction equation is:
4NaBH4 + 2Se +7H2O —— 2NaHSe + Na2B4O7 + 14H2↑ 4NaBH 4 + 2Se +7H 2 O —— 2NaHSe + Na 2 B 4 O 7 + 14H 2 ↑
b. 250ml三口烧瓶中,依次加入0.8mmol硝酸锌、0.024mmol硝酸银、100ml去离子水和200μL 3-巯基丙酸,通入氮气去除溶液中的氧气,然后用1M NaOH调节PH值至9,将三颈烧瓶置于100℃油浴中加热1h,得到无色透明澄清溶液Ⅱ,即Zn(NO3)2(Ag)溶液; b. In a 250ml three-neck flask, add 0.8mmol zinc nitrate, 0.024mmol silver nitrate, 100ml deionized water and 200μL 3-mercaptopropionic acid in sequence, pass through nitrogen to remove oxygen in the solution, and then adjust the pH value to 9 with 1M NaOH, Heat the three-necked flask in an oil bath at 100°C for 1 hour to obtain a colorless and transparent solution II, namely Zn(NO 3 ) 2 (Ag) solution;
c. 用注射器将溶液Ⅰ迅速注入到溶液Ⅱ中,继续通以氮气并保持100℃油浴,反应3h后得到淡黄棕色透明的ZnSe:Ag量子点溶液;化学反应方程式为: c. Use a syringe to quickly inject solution Ⅰ into solution Ⅱ, continue to pass nitrogen gas and maintain an oil bath at 100°C, and react for 3 hours to obtain a light yellow-brown transparent ZnSe:Ag quantum dot solution; the chemical reaction equation is:
Zn(NO3)2(Ag) + NaHSe —— ZnSe(Ag)+NaNO3 + HNO3 Zn(NO 3 ) 2 (Ag) + NaHSe —— ZnSe(Ag) + NaNO 3 + HNO 3
本发明制备的ZnSe:Ag量子点具有稳定性好、团聚少等特点,使其在生物荧光标记和光电材料等领域显示出很大的应用前景。 The ZnSe:Ag quantum dot prepared by the invention has the characteristics of good stability, less agglomeration, etc., so that it shows great application prospects in the fields of bioluminescence labeling, photoelectric materials and the like.
本发明的突出特点为:(1)首次制备出ZnSe:Ag量子点,在紫外灯下发出蓝绿色光;(2)在相对较低的温度下采用水相合成法制备(100℃),实验操作简单,过程容易控制,且制备的量子点无需二次转换,可直接应用于生物标记;(3)制备出来的量子点可在低温避光存储下储藏四个月之久,说明其稳定性较好。解决了量子点稳定性较差,无法长期存储问题。 The outstanding features of the present invention are: (1) ZnSe:Ag quantum dots are prepared for the first time, which emit blue-green light under ultraviolet light; The operation is simple, the process is easy to control, and the prepared quantum dots do not need secondary conversion, and can be directly applied to biomarkers; (3) The prepared quantum dots can be stored at low temperature and protected from light for four months, indicating their stability better. It solves the problem of poor stability of quantum dots and the inability to store them for a long time.
附图说明 Description of drawings
图1本发明制得样品的X射线衍射(XRD)图; The X-ray diffraction (XRD) figure of the sample that Fig. 1 present invention makes;
图2本发明制得样品的高倍透视电子显微镜(HRTEM)照片; Fig. 2 is a high-magnification transmission electron microscope (HRTEM) photo of the sample prepared by the present invention;
图3本发明制得样品的能量色散(EDS)能谱; The energy dispersive (EDS) energy spectrum of the sample that Fig. 3 present invention makes;
图4本发明制得样品的紫外可见吸收(uv-vis)光谱;; Fig. 4 is the ultraviolet-visible absorption (uv-vis) spectrum of the sample prepared by the present invention;
图5本发明制得样品ZnSe和ZnSe:Ag的PL(光致发光)谱图。 Fig. 5 is the PL (photoluminescence) spectrogram of samples ZnSe and ZnSe:Ag prepared by the present invention.
图6本发明制得样品ZnSe:Ag不同掺杂浓度的PL(光致发光)谱图。 Fig. 6 PL (photoluminescence) spectra of samples ZnSe:Ag with different doping concentrations prepared by the present invention.
具体实施方式 Detailed ways
a. 100ml梨形瓶中,通入氮气约30min后,依次加入0.8mmolNaBH4、0.2mmol硒粉(Se)和2mL去离子水;然后将梨形瓶在氮气保护下反应1h,待黑色硒粉全部消失,生成无色透明澄清溶液Ⅰ,即NaHSe溶液,待用; a. In a 100ml pear-shaped bottle, after passing nitrogen gas for about 30 minutes, add 0.8mmol NaBH 4 , 0.2mmol selenium powder (Se) and 2mL deionized water in sequence; then react the pear-shaped bottle under nitrogen protection for 1 hour, and wait for the black selenium powder All disappear, forming a colorless transparent clear solution Ⅰ, that is, NaHSe solution, ready for use;
b. 250ml三口烧瓶中,依次加入0.8mmol硝酸锌、0.024mmol硝酸银、100ml去离子水和200μL 3-巯基丙酸,通入氮气去除溶液中的氧气,然后用1M NaOH调节PH至9,将三颈烧瓶置于100℃油浴中加热1h,得到无色透明澄清溶液Ⅱ,即Zn(NO3)2(Ag)溶液; b. In a 250ml three-neck flask, add 0.8mmol zinc nitrate, 0.024mmol silver nitrate, 100ml deionized water and 200μL 3-mercaptopropionic acid in sequence, pass through nitrogen to remove the oxygen in the solution, and then adjust the pH to 9 with 1M NaOH. The three-necked flask was heated in an oil bath at 100°C for 1 hour to obtain a colorless and transparent solution II, namely Zn(NO 3 ) 2 (Ag) solution;
c. 用注射器将溶液Ⅰ迅速注入到溶液Ⅱ中,继续通以氮气并保持100℃油浴,反应3h后得到淡黄棕色透明的ZnSe:Ag量子点溶液。 c. Use a syringe to quickly inject solution Ⅰ into solution Ⅱ, continue to pass nitrogen gas and maintain an oil bath at 100 °C, and react for 3 hours to obtain a light yellow-brown transparent ZnSe:Ag quantum dot solution.
本发明利用X射线衍射仪和荧光分度计对实验样品进行结构和荧光性能分析,利用EDS能谱仪对制得的ZnSe:Ag量子点进行成分分析,并通过高分辨率透射电子显微镜观察其超微结构,其测试结果表明:如图1所示,ZnSe和ZnSe:Ag量子点的XRD衍射特征峰位一致,大约在27.2o、45.2o和53.6o处,与闪锌矿结构ZnSe晶体的(111)、(220)和(311)晶面位置相符,说明所制得的量子点为闪锌矿结构,Ag掺杂未对ZnSe晶体的结构造成明显影响。在22.9°与33.5°处为Ag2Se,说明有Ag2Se生成;图2为ZnSe:Ag量子点的高倍透射电子显微镜照片(黑斑),量子点的颗粒尺度分布均匀,未发生团聚。尺寸在3nm左右。图3为ZnSe:Ag量子点的EDS能谱图,可看出产物中含有Ag、Zn、Se等元素,与ZnSe:Ag量子点化学成分一致。S元素的特征峰是因为本身实验所用3-巯基乙酸中含有S离子;由于制备的样品是承载在铜网上进行观测,所以Cu元素的特征峰是铜网所致;Ag含量明显偏高,其主要原因是Ag2Se化合物产生。图4为ZnSe量子点和ZnSe:Ag量子点的紫外-吸收光谱。相比ZnSe量子点吸收边,ZnSe:Ag量子点吸收边较宽,结合ZnSe:Ag量子点的XRD图像,说明制备样品中存在的Ag2Se导致其吸收边变宽。但是开始转折处大约在375nm处。说明ZnSe:Ag量子点相对于ZnSe量子点结构并未发生改变,与XRD图像所得结论相符。图5为ZnSe和ZnSe:Ag量子点在325nm激发波长下的荧光发射光谱。如图所示ZnSe有两个峰位置大约在375nm和460nm处,对应吸收边的位置可知375nm的发射峰是ZnSe量子点的带边发射,460nm处的波峰为缺陷峰。当ZnSe掺杂Ag离子后,仅在475nm处有一个荧光发射峰,相对于ZnSe量子点发生红移。说明可能是Ag间隙掺杂Agi进入ZnSe量子点禁带中形成新的杂质能级,成为载流子复合中心。实现了一定程度的Ag离子掺杂,并且由于掺杂后杂质能级与表面态处于“竞争”状态,载流子趋向于在杂质能级上复合,导致375nm处带边发射消失,转为475nm处杂质能级上复合发光,并且明显加强了发光强度。图6为不同掺杂浓度的量子点PL(光致发光)谱图。可以看出掺杂浓度为12.5%的量子点发光强度最高。该浓度的量子点在365nm紫外灯照射下发出蓝绿色光。而掺杂浓度低于12.5%的量子点发光同样为蓝绿色,但是发光强度随掺杂浓度降低而降低。当掺杂浓度过高时,达到15%时,发射峰明显减弱,此时发光为不明显的土黄色光。当掺杂浓度较低时,量子点发射峰不明显,此时无法形成较好的杂质能级,导致载流子在杂质能级上复合不明显,从而发光强度较低。而当掺杂浓度达到12.5%时,充分形成杂质能级,载流子在杂质能级上复合,发光强度高,发射峰明显。但是当掺杂浓度过大时,Ag离子与Se离子结合生成大量的Ag2Se,并且可能出现量子点团聚现象,从而影响了量子点中杂质能级发光,导致其发光强度大大降低。 The present invention uses an X-ray diffractometer and a fluorescence indexer to analyze the structure and fluorescence properties of the experimental sample, uses an EDS energy spectrometer to analyze the composition of the prepared ZnSe:Ag quantum dots, and observes them through a high-resolution transmission electron microscope. Ultrastructure, the test results show that: as shown in Figure 1, the XRD diffraction characteristic peaks of ZnSe and ZnSe:Ag quantum dots are consistent, at about 27.2 o , 45.2 o and 53.6 o , which is similar to that of zinc blende structure ZnSe crystal The positions of (111), (220) and (311) crystal planes are consistent, indicating that the prepared quantum dots have a sphalerite structure, and Ag doping has no obvious effect on the structure of ZnSe crystals. Ag 2 Se at 22.9° and 33.5° indicates the formation of Ag 2 Se; Figure 2 is a high-magnification transmission electron micrograph (black spot) of ZnSe:Ag quantum dots. The particle size distribution of quantum dots is uniform and no agglomeration occurs. The size is around 3nm. Figure 3 is the EDS energy spectrum of ZnSe:Ag quantum dots. It can be seen that the product contains Ag, Zn, Se and other elements, which are consistent with the chemical composition of ZnSe:Ag quantum dots. The characteristic peak of the S element is because the 3-mercaptoacetic acid used in the experiment contains S ions; since the prepared sample is carried on the copper grid for observation, the characteristic peak of the Cu element is caused by the copper grid; the Ag content is obviously high, and its The main reason is the generation of Ag 2 Se compound. Fig. 4 is the ultraviolet-absorption spectrum of ZnSe quantum dot and ZnSe:Ag quantum dot. Compared with the absorption edge of ZnSe quantum dots, the absorption edge of ZnSe:Ag quantum dots is wider. Combined with the XRD image of ZnSe:Ag quantum dots, it shows that the presence of Ag 2 Se in the prepared samples leads to the broadening of the absorption edge. But the starting turning point is around 375nm. It shows that the ZnSe:Ag quantum dot structure has not changed relative to the ZnSe quantum dot structure, which is consistent with the conclusion obtained from the XRD image. Fig. 5 shows the fluorescence emission spectra of ZnSe and ZnSe:Ag quantum dots at an excitation wavelength of 325nm. As shown in the figure, ZnSe has two peak positions at about 375nm and 460nm, corresponding to the position of the absorption edge, it can be seen that the emission peak at 375nm is the band edge emission of ZnSe quantum dots, and the peak at 460nm is the defect peak. When ZnSe is doped with Ag ions, there is only one fluorescence emission peak at 475nm, which is red-shifted relative to ZnSe quantum dots. It may be that Ag interstitially doped Ag i enters the ZnSe quantum dot forbidden band to form a new impurity energy level and become a carrier recombination center. A certain degree of Ag ion doping has been achieved, and because the impurity energy level and the surface state are in a "competition" state after doping, the carriers tend to recombine on the impurity energy level, resulting in the disappearance of the band-edge emission at 375nm and turning to 475nm At the impurity level, recombination emits light, and the luminous intensity is obviously enhanced. Figure 6 shows the PL (photoluminescence) spectra of quantum dots with different doping concentrations. It can be seen that the quantum dots with a doping concentration of 12.5% have the highest luminous intensity. Quantum dots with this concentration emit blue-green light under the irradiation of 365nm ultraviolet lamp. Quantum dots with a doping concentration lower than 12.5% also emit blue-green light, but the luminous intensity decreases as the doping concentration decreases. When the doping concentration is too high, reaching 15%, the emission peak is obviously weakened, and at this time, the luminescence is an inconspicuous khaki light. When the doping concentration is low, the emission peak of the quantum dots is not obvious, and a good impurity energy level cannot be formed at this time, resulting in the indistinct recombination of carriers at the impurity energy level, resulting in low luminous intensity. When the doping concentration reaches 12.5%, the impurity energy level is fully formed, and the carriers recombine on the impurity energy level, with high luminous intensity and obvious emission peak. However, when the doping concentration is too high, Ag ions combine with Se ions to form a large amount of Ag 2 Se, and quantum dots may agglomerate, which affects the luminescence of impurity levels in quantum dots, resulting in a greatly reduced luminous intensity.
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