CN103318855A - Preparation method of chromium nitride - Google Patents
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Abstract
本发明涉及一种氮化铬的制备方法,属于无机非金属材料制备技术领域。该方法以粒度为200目以上,且至少为高纯试剂3.5N的金属铬粉为原料,将装有原料的坩埚置于可控气氛高温炉中,在流动的氨气中进行高温反应合成,合成温度为800~1200℃,保温2~20小时,炉内氧气压力范围为1.013×104.55~1.013×104.58Pa,氮气压力范围为1.013×103.11~1.013×106.41Pa。反应完成之后在氨气流中冷却至室温,将产物取出,充分研磨至粉体。本发明制备的氮化铬经XRD分析,仅有氮化铬的物相,没有观察到其他杂质的特征谱峰,不含其他杂质,含氧量低于1.65%,且生产工艺简单,原料易于保存,适于规模化生产。The invention relates to a preparation method of chromium nitride, belonging to the technical field of preparation of inorganic non-metallic materials. The method uses metal chromium powder with a particle size of more than 200 mesh and at least 3.5N of high-purity reagent as raw material, places the crucible with the raw material in a high-temperature furnace with a controlled atmosphere, and performs high-temperature reaction synthesis in flowing ammonia gas. The synthesis temperature is 800~1200℃, and the temperature is kept for 2~20 hours. The oxygen pressure range in the furnace is 1.013×10 4.55 ~1.013×10 4.58 Pa, and the nitrogen pressure range is 1.013×10 3.11 ~1.013×10 6.41 Pa. After the reaction was completed, it was cooled to room temperature in an ammonia stream, and the product was taken out and thoroughly ground to a powder. The chromium nitride prepared by the present invention has only the phase of chromium nitride through XRD analysis, no characteristic peaks of other impurities are observed, no other impurities, and the oxygen content is lower than 1.65%, and the production process is simple, and the raw materials are easy to use. Preservation, suitable for large-scale production.
Description
技术领域 technical field
本发明涉及一种氮化铬的制备方法,属于无机非金属材料制备技术领域。 The invention relates to a preparation method of chromium nitride, which belongs to the technical field of preparation of inorganic non-metallic materials.
背景技术 Background technique
氮化铬具有很多优异的特性,如高硬度、高熔点、低摩擦系数以及很好的导电性。由于氮化铬的超强硬度以及良好的抗腐蚀和抗氧化性能,常常用做保护涂层以及超硬材料,是比目前应用较广的氮化钛更好的耐磨材料。同时氮化铬是氮化物中唯一具有反铁磁性的材料,在磁学方面有广泛应用。另外,氮化铬在冶金工业、电子工业、高温结构陶瓷、微电子器件等方面有重要应用。 Chromium nitride has many excellent properties, such as high hardness, high melting point, low coefficient of friction, and good electrical conductivity. Due to its super hardness and good corrosion and oxidation resistance, chromium nitride is often used as a protective coating and superhard material, which is a better wear-resistant material than titanium nitride, which is widely used at present. At the same time, chromium nitride is the only material with antiferromagnetism among nitrides, and it is widely used in magnetism. In addition, chromium nitride has important applications in metallurgical industry, electronic industry, high-temperature structural ceramics, and microelectronic devices.
氮化铬的制备方法现阶段主要有:高能球磨法、苯热法、高温自蔓延法、电弧放电等离子体法、氨解法、微波辅助法等。高能球磨法能耗大,产率低,且易引入杂质。苯热法存在一定的危险性,加热有机溶液过程中易产生碳的残留,影响氮化铬的纯度。微波辅助法是将微波加热与碳热还原相结合,引入的无定形碳难以去除而残留在产品中。电弧放电等离子体法是用金属铬与氮气在电弧放电设备中反应制得产品,对设备要求高,能耗大,生产能力低,难以大规模生产。氨解法是现在应用较多的方法之一,该法以铬的氯化物、氧化物、硫化物以及铬配合物等为原料,在氨气气氛条件下反应合成氮化铬。但该法所用的原料不易保存,且反应中会产生有害气体,造成设备的腐蚀以及空气污染。上述这些方法制备的氮化铬的纯度均较低,最高的仅能达到95%左右,而且含氧量较高。 At present, the preparation methods of chromium nitride mainly include: high-energy ball milling method, benzene thermal method, high-temperature self-propagating method, arc discharge plasma method, ammonium solution method, microwave-assisted method, etc. The high-energy ball milling method consumes a lot of energy, has a low yield, and is easy to introduce impurities. There is a certain risk in the benzene thermal method, and carbon residues are likely to be generated during the heating of the organic solution, which affects the purity of chromium nitride. The microwave-assisted method combines microwave heating with carbothermal reduction, and the introduced amorphous carbon is difficult to remove and remains in the product. The arc discharge plasma method uses metal chromium and nitrogen to react in arc discharge equipment to produce products, which requires high equipment, high energy consumption, low production capacity, and is difficult to produce on a large scale. The ammonolysis method is one of the most widely used methods. This method uses chromium chlorides, oxides, sulfides, and chromium complexes as raw materials to synthesize chromium nitride under ammonia atmosphere conditions. However, the raw materials used in this method are not easy to preserve, and harmful gases will be produced in the reaction, causing corrosion of equipment and air pollution. The purity of the chromium nitride prepared by the above-mentioned methods is relatively low, the highest can only reach about 95%, and the oxygen content is relatively high.
发明内容 Contents of the invention
针对现有技术存在的缺陷,本发明的目的在于提供一种制备氮化铬的方法,采用金属铬粉为原料,在氨气气氛中发生高温反应合成氮化铬,使用设备及操作流程简单,所得产品纯度高,含氧量低。 In view of the defects existing in the prior art, the object of the present invention is to provide a method for preparing chromium nitride, which adopts metal chromium powder as raw material, and reacts at high temperature in an ammonia atmosphere to synthesize chromium nitride, and the equipment and operation process are simple, The resulting product has high purity and low oxygen content.
为达到上述目的,本发明采用如下技术方案: To achieve the above object, the present invention adopts the following technical solutions:
一种氮化铬的制备方法,其特征在于,该方法包括如下步骤:以高纯金属铬粉为原料,将原料放入坩埚中,再将坩埚置于高温电炉中,在流动的氨气条件下进行高温反应合成,合成温度为800~1200℃,保温2~20小时;反应完成之后在氨气流中随炉冷却至室温,将产物取出,充分研磨至粉体。 A method for preparing chromium nitride, which is characterized in that the method comprises the following steps: using high-purity metal chromium powder as a raw material, putting the raw material into a crucible, and then placing the crucible in a high-temperature electric furnace, under the condition of flowing ammonia gas Under high temperature reaction synthesis, the synthesis temperature is 800~1200°C, and the temperature is kept for 2~20 hours; after the reaction is completed, it is cooled to room temperature with the furnace in the ammonia flow, and the product is taken out and fully ground to powder.
上述采用金属铬粉的粒度为200目以上,纯度为3.5N以上。 The particle size of the metal chromium powder used above is more than 200 mesh, and the purity is more than 3.5N.
上述在合成反应时,控制炉内氧气压力范围为1.013×104.55~1.013×104.58Pa,氮气压力范围为1.013×103.11~1.013×106.41Pa。 During the above-mentioned synthesis reaction, the oxygen pressure in the furnace is controlled to range from 1.013×10 4.55 to 1.013×10 4.58 Pa, and the nitrogen pressure to range from 1.013×10 3.11 to 1.013×10 6.41 Pa.
本发明的反应机理如下所述: The reaction mechanism of the present invention is as follows:
金属铬粉与NH3可反应生成CrN,其反应式如下: Metal chromium powder can react with NH3 to generate CrN, and the reaction formula is as follows:
2Cr+2NH3=2CrN+3H2 2Cr+2NH 3 =2CrN+3H 2
如果金属铬粉的颗粒表面存在氧化铬膜,表面的氧化铬也可以与NH3反应生成CrN,反应式如下:Cr2O3+2NH3=2CrN+3H2O If there is a chromium oxide film on the particle surface of metal chromium powder, the chromium oxide on the surface can also react with NH 3 to form CrN, the reaction formula is as follows: Cr 2 O 3 +2NH 3 =2CrN+3H 2 O
这样可以获得含氧量较低的高纯度的CrN。 In this way, high-purity CrN with low oxygen content can be obtained.
与现有技术相比,本发明具有如下突出的实质性特点和显著地优点: Compared with the prior art, the present invention has the following prominent substantive features and significant advantages:
本发明制备的氮化铬经XRD分析,仅有氮化铬的物相,没有观察到其他杂质的特征谱峰,不含其他杂质,含氧量低于1.65%,且生产工艺简单,原料易于保存,适于规模化生产。 The chromium nitride prepared by the present invention has only the phase of chromium nitride through XRD analysis, no characteristic peaks of other impurities are observed, no other impurities, and the oxygen content is lower than 1.65%, and the production process is simple, and the raw materials are easy to use. Preservation, suitable for large-scale production.
具体实施方式 Detailed ways
现将本发明的具体实施例叙述于后。 Specific embodiments of the present invention are described below.
实施例1 Example 1
以200~250目,铬含量为99.95%的金属铬粉为原料,称取约5g原料装入石墨坩埚中。将石墨坩埚放入气氛炉中,在工业级氨气环境下进行气-固反应。合成温度为800℃,保温20小时,持续通入氨气。控制炉内氧气压力为1.013×104.55Pa,氮气压力为1.013×103.11Pa。反应完成之后在氨气流中冷却至室温,将产物取出,充分研磨至粉体。 Using 200-250 mesh metal chromium powder with a chromium content of 99.95% as the raw material, weigh about 5g of the raw material and put it into a graphite crucible. The graphite crucible was placed in an atmosphere furnace, and the gas-solid reaction was carried out in an industrial-grade ammonia environment. The synthesis temperature is 800°C, the temperature is kept for 20 hours, and ammonia gas is continuously fed. Control the oxygen pressure in the furnace to 1.013×10 4.55 Pa, and the nitrogen pressure to 1.013×10 3.11 Pa. After the reaction was completed, it was cooled to room temperature in an ammonia stream, and the product was taken out and thoroughly ground to a powder.
本方法合成的氮化铬经XRD分析,仅有氮化铬的物相,没有观察到其他杂质的特征谱峰,氧含量为2.38%。 The chromium nitride synthesized by the method is analyzed by XRD, only has the phase of chromium nitride, and no characteristic peaks of other impurities are observed, and the oxygen content is 2.38%.
实施例2 Example 2
本实例提供一种氮化铬的制备方法,其具体制备过程和步骤如下: This example provides a kind of preparation method of chromium nitride, and its specific preparation process and steps are as follows:
以200~250目,铬含量为99.95%的金属铬粉为原料,称取约5g原料装入石墨坩埚中。将石墨坩埚放入气氛炉中,在工业级氨气环境下进行气-固反应。合成温度为1000℃,保温10小时,持续通入氨气。控制炉内氧气压力为1.013×104.57Pa,氮气压力为1.013×105.01Pa。反应完成之后在氨气流中冷却至室温,将产物取出,充分研磨至粉体。 Using 200-250 mesh metal chromium powder with a chromium content of 99.95% as the raw material, weigh about 5g of the raw material and put it into a graphite crucible. The graphite crucible was placed in an atmosphere furnace, and the gas-solid reaction was carried out in an industrial-grade ammonia environment. The synthesis temperature is 1000°C, the temperature is kept for 10 hours, and ammonia gas is continuously fed. Control the oxygen pressure in the furnace to 1.013×10 4.57 Pa, and the nitrogen pressure to 1.013×10 5.01 Pa. After the reaction was completed, it was cooled to room temperature in an ammonia stream, and the product was taken out and thoroughly ground to a powder.
本方法合成的氮化铬经XRD分析,仅有氮化铬的物相,没有观察到其他杂质的特征谱峰,氧含量为1.63%。 The chromium nitride synthesized by the method is analyzed by XRD, only has the phase of chromium nitride, and no characteristic spectrum peaks of other impurities are observed, and the oxygen content is 1.63%.
实施例3 Example 3
以200~250目,铬含量为99.95%的金属铬粉为原料,称取约5g原料装入石墨坩埚中。将石墨坩埚放入气氛炉中,在工业级氨气环境下进行气-固反应。合成温度为1200℃,保温4小时,持续通入氨气。控制炉内氧气压力为1.013×104.58Pa,氮气压力为1.013×106.41Pa。反应完成之后在氨气流中冷却至室温,将产物取出,充分研磨至粉体。 Using 200-250 mesh metal chromium powder with a chromium content of 99.95% as the raw material, weigh about 5g of the raw material and put it into a graphite crucible. The graphite crucible was placed in an atmosphere furnace, and the gas-solid reaction was carried out in an industrial-grade ammonia environment. The synthesis temperature is 1200°C, the temperature is kept for 4 hours, and ammonia gas is continuously fed. Control the oxygen pressure in the furnace to 1.013×10 4.58 Pa, and the nitrogen pressure to 1.013×10 6.41 Pa. After the reaction was completed, it was cooled to room temperature in an ammonia stream, and the product was taken out and thoroughly ground to a powder.
本方法合成的氮化铬经XRD分析,仅有氮化铬的物相,没有观察到其他杂质的特征谱峰,氧含量为3.98%。 The chromium nitride synthesized by the method is analyzed by XRD, only has the phase of chromium nitride, and no characteristic spectrum peaks of other impurities are observed, and the oxygen content is 3.98%. the
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CN103754839A (en) * | 2013-11-15 | 2014-04-30 | 上海大学 | Preparation method of nanocrystal vanadium nitride powder |
CN104843656A (en) * | 2015-05-05 | 2015-08-19 | 江苏江南铁合金有限公司 | Chromium nitride preparation method |
CN106927436A (en) * | 2015-12-30 | 2017-07-07 | 四平市高斯达纳米材料设备有限公司 | A kind of preparation method of chromium nitride nano powder |
CN108277393A (en) * | 2018-02-05 | 2018-07-13 | 南通鑫祥锌业有限公司 | A kind of zinc band and preparation method thereof |
CN110128148A (en) * | 2019-04-26 | 2019-08-16 | 山东科技大学 | A kind of preparation method of chromium nitride ceramic film |
US10611638B2 (en) | 2014-03-21 | 2020-04-07 | Höganäs Ab (Publ) | Process for manufacturing a metal carbide, nitride, boride, or silicide in powder form |
CN111620312A (en) * | 2020-06-09 | 2020-09-04 | 合肥中航纳米技术发展有限公司 | Preparation method of nano chromium nitride powder |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6183605A (en) * | 1984-09-29 | 1986-04-28 | Denki Kagaku Kogyo Kk | Production of chromium nitride |
JPH04141575A (en) * | 1990-09-28 | 1992-05-15 | Sumitomo Metal Mining Co Ltd | Surface-coated aluminum alloy and production thereof |
CN101012538A (en) * | 2007-02-14 | 2007-08-08 | 西安建筑科技大学 | Preparing technique of nitride chromium silk net copper-based composite material |
CN101037192A (en) * | 2007-03-23 | 2007-09-19 | 南京大学 | Original chloride transfer method for generation of transition metal compound nano structure |
-
2013
- 2013-06-09 CN CN2013102298928A patent/CN103318855A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6183605A (en) * | 1984-09-29 | 1986-04-28 | Denki Kagaku Kogyo Kk | Production of chromium nitride |
JPH04141575A (en) * | 1990-09-28 | 1992-05-15 | Sumitomo Metal Mining Co Ltd | Surface-coated aluminum alloy and production thereof |
CN101012538A (en) * | 2007-02-14 | 2007-08-08 | 西安建筑科技大学 | Preparing technique of nitride chromium silk net copper-based composite material |
CN101037192A (en) * | 2007-03-23 | 2007-09-19 | 南京大学 | Original chloride transfer method for generation of transition metal compound nano structure |
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CN103754839A (en) * | 2013-11-15 | 2014-04-30 | 上海大学 | Preparation method of nanocrystal vanadium nitride powder |
CN103754839B (en) * | 2013-11-15 | 2016-01-13 | 上海大学 | A kind of preparation method of nanocrystalline vanadium nitride powder |
US10611638B2 (en) | 2014-03-21 | 2020-04-07 | Höganäs Ab (Publ) | Process for manufacturing a metal carbide, nitride, boride, or silicide in powder form |
CN104843656A (en) * | 2015-05-05 | 2015-08-19 | 江苏江南铁合金有限公司 | Chromium nitride preparation method |
CN106927436A (en) * | 2015-12-30 | 2017-07-07 | 四平市高斯达纳米材料设备有限公司 | A kind of preparation method of chromium nitride nano powder |
CN106927436B (en) * | 2015-12-30 | 2019-04-16 | 四平市高斯达纳米材料设备有限公司 | A kind of preparation method of chromium nitride nano powder |
CN108277393A (en) * | 2018-02-05 | 2018-07-13 | 南通鑫祥锌业有限公司 | A kind of zinc band and preparation method thereof |
CN110128148A (en) * | 2019-04-26 | 2019-08-16 | 山东科技大学 | A kind of preparation method of chromium nitride ceramic film |
CN111620312A (en) * | 2020-06-09 | 2020-09-04 | 合肥中航纳米技术发展有限公司 | Preparation method of nano chromium nitride powder |
CN112158884A (en) * | 2020-09-25 | 2021-01-01 | 甘肃锦世化工有限责任公司 | Method for improving color of chromium oxide green |
CN115215663A (en) * | 2022-07-19 | 2022-10-21 | 武汉理工大学 | A kind of preparation method of high density pure phase CrN ceramics |
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