CN103308837A - Device and method for testing laser diode - Google Patents
Device and method for testing laser diode Download PDFInfo
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- CN103308837A CN103308837A CN 201210056436 CN201210056436A CN103308837A CN 103308837 A CN103308837 A CN 103308837A CN 201210056436 CN201210056436 CN 201210056436 CN 201210056436 A CN201210056436 A CN 201210056436A CN 103308837 A CN103308837 A CN 103308837A
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- laser diode
- crystal grain
- diode crystal
- current
- photoelectric characteristic
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Abstract
The invention provides a lower-cost and higher-efficiency device and a method for testing a laser diode. The testing method comprises the steps of: calculating a plurality of current values of a current increasing step by step according to predetermined photoelectric characteristics; acquiring a control parameter; providing the current for a laser diode die according to the current values and the control parameter; measuring voltage values loaded on the laser diode die and corresponding to the current values and measuring optical power values sent by the laser diode die and corresponding to the current values according to the control parameter; generating a data table and a curve graph which represent photoelectric characteristics of the laser diode die according to the current values, the voltage values and the optical power values; and judging whether the photoelectric characteristics of the laser diode die meet the predetermined photoelectric characteristics according to the data table and the curve graph and further judging whether the laser diode die is qualified or not. The laser diode die is encapsulated into a laser diode if the laser diode die is qualified.
Description
Technical field
The present invention relates to laser diode, the proving installation of a kind of laser diode of special design and method of testing.
Background technology
Laser diode (laser diode, LD) is formed by laser diode crystal grain (LD die) encapsulation, and whether its quality the qualified laser diode crystal grain that depends primarily on, and encapsulates less to the quality influence of laser diode.Yet, at present laser diode often needs utilize after encapsulate the device such as optical fiber to assist and could measure photoelectric characteristic to judge whether quality is qualified, usually in the underproof situation of laser diode crystal grain, also encapsulate, cause waste, improve the cost of laser diode.
In addition, existing laser diode test is main by artificial, is set and for laser diode provides different power supplys, is then measured the corresponding luminous power that laser diode sends, thereby obtain the photoelectric characteristic of laser diode by the operator.Testing efficiency is low.
Summary of the invention
In view of this, be necessary to provide a kind of proving installation that reduces cost and raise the efficiency.
A kind of proving installation is used for laser diode crystal grain of test and whether satisfies predetermined photoelectric characteristic, and this laser diode crystal grain is packaged into a laser diode after satisfying this predetermined photoelectric characteristic, and this proving installation comprises:
A current source;
A light power meter; And
A processor, it comprises
A computing unit is for these a plurality of current values that calculate the electric current of a stepping growth according to the photoelectric characteristic that should be scheduled to;
A user interface is used for receiving the user and inputs to determine the control parameter of this current source and this light power meter;
A control module, being used for controlling this current source according to this a plurality of current values and this control parameter provides this electric current and measurement to be carried in the magnitude of voltage of each current value of correspondence on this laser diode crystal grain and controls the optical power value that this light power meter is measured each current value of correspondence that this laser diode crystal grain sends to this laser diode crystal grain; And
A data generation unit is used for these a plurality of current values of basis and these a plurality of magnitudes of voltage that measure and this a plurality of optical power values and whether satisfies this predetermined photoelectric characteristic at a tables of data and curve map that this user interface generates for the photoelectric characteristic that represents this laser diode crystal grain for the photoelectric characteristic of judging this laser diode crystal grain.
A kind of method of testing is used for laser diode crystal grain of test and whether satisfies predetermined photoelectric characteristic, and this laser diode crystal grain is packaged into a laser diode after satisfying this predetermined photoelectric characteristic, and this method of testing may further comprise the steps:
Calculate a plurality of current values of the electric current of a stepping growth according to this predetermined photoelectric characteristic;
Obtain the control parameter;
Provide this electric current according to these a plurality of current values and this control parameter to this laser diode crystal grain;
Be carried on this laser diode crystal grain the magnitude of voltage of corresponding each current value and measure the optical power value of each current value of correspondence that this laser diode crystal grain sends according to this control parameter measurement;
Generate a tables of data and a curve map of the photoelectric characteristic of this laser diode crystal grain of expression according to these a plurality of current values, magnitude of voltage and optical power value;
Judge according to this tables of data and this curve map whether the photoelectric characteristic of this laser diode crystal grain satisfies this predetermined photoelectric characteristic, thereby judge whether this laser diode crystal grain is qualified.
Adopt this proving installation and method of testing in the laser diode manufacture process, directly to test laser diode crystal grain, and the qualified laser diode crystal grain of packaging and testing only, avoid encapsulating underproof laser diode crystal grain, cause waste, thereby reduce the cost of laser diode.In addition, this proving installation and method of testing can realize automatic test, reach the effect of raising the efficiency.
Description of drawings
Fig. 1 is the process flow diagram of the laser diode method of testing of better embodiment of the present invention.
Fig. 2 is the schematic diagram of the laser diode proving installation of better embodiment of the present invention.
Fig. 3 is the schematic diagram of processor of the proving installation of Fig. 2.
The main element symbol description
| Step | S1-S7, S12a- |
| Proving installation | |
| 10 | |
| Chuck | 12 |
| |
14 |
| Voltmeter | 142 |
| |
144 |
| |
16 |
| The |
162 |
| |
164 |
| The |
166 |
| The |
168 |
| |
18 |
| |
182 |
| |
184 |
| Laser |
20 |
| |
100 |
| Computing unit | 102 |
| User interface | 104 |
| Control module | 106 |
| Data generating unit | 108 |
| Tables of data | 110 |
| Curve map | 112 |
| The light power meter setting area | 114 |
| The current source setting area | 116 |
Following embodiment further specifies the present invention in connection with above-mentioned accompanying drawing.
Embodiment
See also Fig. 1, the laser diode method of testing of better embodiment of the present invention is used for a laser diode crystal grain 20 of test (please refer to the drawing 2) and whether satisfies predetermined photoelectric characteristic, this laser diode crystal grain 20 is packaged into a laser diode after satisfying this predetermined photoelectric characteristic, this method of testing may further comprise the steps:
S1: carry this laser diode crystal grain 20;
S2: a plurality of current values that calculate the electric current of a stepping growth according to this predetermined photoelectric characteristic;
S3: obtain the control parameter;
S4: provide this electric current to this laser diode crystal grain 20 according to these a plurality of current values and this control parameter;
S5: be carried on this laser diode crystal grain 20 magnitude of voltage of corresponding each current value and measure the optical power value of each current value of correspondence that this laser diode crystal grain 20 sends according to this control parameter measurement;
S6: tables of data 110 and curve Figure 112 (please refer to the drawing 3) of generating the photoelectric characteristic of this laser diode crystal grain 20 of expression according to these a plurality of current values, magnitude of voltage and optical power value; And
S7: judge according to this tables of data 110 and this curve Figure 112 whether the photoelectric characteristic of this laser diode crystal grain 20 satisfies this predetermined photoelectric characteristic, thereby judge whether this laser diode crystal grain 20 is qualified.
Please refer to the drawing 2, this method of testing can adopt a proving installation 10 to realize.This proving installation 10 comprises a chuck 12, a current source 14, a suspension 16, a light power meter 18 and a processor 100.
This chuck 12 is used for this laser diode crystal grain 20 of carrying, that is to say to be used for realizing this step S1.Certainly, in other embodiments, also can adopt other device to carry this laser diode crystal grain 20, even can fix in other way this laser diode crystal grain 20, for example clamping, therefore, in other embodiments, this step S1 can save.
This current source 14 is used for providing to this laser diode crystal grain 20 electric current of a stepping growth, and this electric current has a plurality of current values.This current source 14 comprises that is used for measuring a voltmeter 142 that is carried in the magnitude of voltage of corresponding each current value on this laser diode crystal grain 20.
This suspension 16 is arranged on this chuck 12.This suspension 16 includes first cantilever 162.
This light power meter 18 comprise one be arranged on this first cantilever 162 and with this laser diode crystal grain 20 over against optical detector 182 and a power meter 184 that is connected and is used for measuring the optical power value of corresponding each current value that this laser diode crystal grain 20 sends with this optical detector 182.
See also Fig. 3, this processor 100 is connected with this current source 14 and this light power meter 18.This processor 100 comprises a computing unit 102, a user interface 104, a control module 106 and a data generation unit 108.This computing unit 102 is used for according to should predetermined photoelectric characteristic calculating these a plurality of current values.This user interface 104 is used for receiving the user and inputs to determine the control parameter of this current source 14 and this light power meter 18.This control module 106 is used for controlling this current source 14 according to this a plurality of current values and this control parameter to be provided this electric current and measures the magnitude of voltage that is carried in each current value of correspondence on this laser diode crystal grain 20 and control the optical power value of each current value of correspondence that these light power meter 18 these laser diode crystal grain 20 of measurement send to this laser diode crystal grain 20.This data generating unit 108 is used for these a plurality of current values of basis and these a plurality of magnitudes of voltage that measure and this a plurality of optical power values and whether satisfies this predetermined photoelectric characteristic at a tables of data 110 and curve Figure 112 that this user interface 104 generates for the photoelectric characteristic that represents this laser diode crystal grain 20 for the photoelectric characteristic of judging this laser diode crystal grain 20.
Concrete, except this tables of data 110 and this curve Figure 112, this user interface 104 also comprises a light power meter setting area 114 and a current source setting area 116.
That is to say, this computing unit 102 can be used for realizing this step S2.This user interface 104 can be used for realizing this step S3.This current source 14 and this control module 106 cooperate can be used for realizing this step S4.This voltmeter 142, this light power meter 18 and this control module 106 cooperate can be used for realizing this step S5.This data generating unit 108 and this user interface 104 cooperate can be used for realizing this step S6.This step S7 can manually realize, can certainly pass through to realize in this processor 100 interior unit that increase correspondence.
Adopt this method of testing and this proving installation 10 in the laser diode manufacture process, directly laser diode crystal grain to be tested, and the qualified laser diode crystal grain of packaging and testing only, avoid encapsulating underproof laser diode crystal grain, cause waste, thereby reduce the cost of laser diode.
Concrete, this current source 14 is connected with positive pole and the negative pole of this laser diode crystal grain 20 by two probes 144, and this electric current is provided.These a plurality of current values can be 1mA, 2mA, 3mA ... 20mA.This voltmeter 142 is built in this current source 14, obtains this a plurality of magnitudes of voltage by the voltage of measuring between these two probes 144.
This suspension 16 can comprise a rotating disk 164, and this first cantilever 162 arranges and is fixed on this rotating disk 164, can by rotate position that this rotating disk 164 adjusts these optical detectors 182 to this optical detector 182 and this laser diode crystal grain 20 over against.
Preferably, this suspension 16 can also comprise second cantilever 166 and a camera module 168.This second cantilever 166 is fixed on this rotating disk 164.This camera module 168 is arranged on this second cantilever 166, and can by rotate position that this rotating disk 164 adjusts these camera modules 168 to this camera module 168 and this laser diode crystal grain 20 over against.This method for manufacturing laser diode also comprises step after this step 200:
S12a: the image of taking this laser diode crystal grain 20;
S12b: show this image; And
S12c: thus whether exist bad order to judge whether this laser diode crystal grain 20 is qualified according to this laser diode crystal grain 20 of this graphical analysis, if this laser diode crystal grain 20 is to have bad order (namely this laser diode crystal grain 20 is defective), then do not encapsulate this laser diode crystal grain 20.
The structure even its setting that are appreciated that this suspension 16 are also also non-essential, and in other embodiments, this suspension 16 can adopt other settings, even can save or adopt other devices.
This step S12a can be realized by this camera module 168.This step S12b can cooperate realization by this data generating unit 108 and this user interface 104.This step S12c can manually realize, can certainly pass through to realize in this processor 100 interior unit that increase correspondence.
In a word; those skilled in the art will be appreciated that; above embodiment only is that the present invention is described; and be not to be used as limitation of the invention; as long as within connotation scope of the present invention, appropriate change and variation that above embodiment is done all drop within the scope of protection of present invention.
Claims (8)
1. a proving installation is used for laser diode crystal grain of test and whether satisfies predetermined photoelectric characteristic, and this laser diode crystal grain is used for being packaged into laser diode after satisfying this predetermined photoelectric characteristic, and this proving installation comprises:
A current source;
A light power meter; And
A processor, it comprises
A computing unit is for these a plurality of current values that calculate the electric current of a stepping growth according to the photoelectric characteristic that should be scheduled to;
A user interface is used for receiving the user and inputs to determine the control parameter of this current source and this light power meter;
A control module, being used for controlling this current source according to this a plurality of current values and this control parameter provides this electric current and measurement to be carried in the magnitude of voltage of each current value of correspondence on this laser diode crystal grain and controls the optical power value that this light power meter is measured each current value of correspondence that this laser diode crystal grain sends to this laser diode crystal grain;
A data generation unit is used for these a plurality of current values of basis and these a plurality of magnitudes of voltage that measure and this a plurality of optical power values and whether satisfies this predetermined photoelectric characteristic at a tables of data and curve map that this user interface generates for the photoelectric characteristic that represents this laser diode crystal grain for the photoelectric characteristic of judging this laser diode crystal grain.
2. proving installation as claimed in claim 1 is characterized in that, this current source comprises a voltmeter that is used for these a plurality of magnitudes of voltage of test.
3. proving installation as claimed in claim 1 is characterized in that, this proving installation also comprises a chuck that is used for this laser diode crystal grain of carrying.
4. proving installation as claimed in claim 3, it is characterized in that, this proving installation also comprises a suspension that is arranged on this chuck, this suspension includes first cantilever, this light power meter comprise one be arranged on this first cantilever and with this laser diode crystal grain over against optical detector and a power meter that is connected and is used for measuring the optical power value of corresponding each current value that this laser diode crystal grain sends with this optical detector.
5. proving installation as claimed in claim 4, it is characterized in that, this suspension comprises a rotating disk, and this first cantilever setting is fixed on this rotating disk, this rotating disk be used for by rotate the position of adjusting this optical detector to this optical detector and this laser diode crystal grain over against.
6. proving installation as claimed in claim 2 is characterized in that, this suspension also comprises second cantilever and a camera module; This second cantilever is fixed on this rotating disk; This camera module is arranged on this second cantilever; This rotating disk also be used for by rotate the position of adjusting this camera module to this camera module and this laser diode crystal grain over against, this camera module is used for the image of this laser diode crystal grain of shooting whether to have bad order according to this laser diode crystal grain of this graphical analysis.
7. a method of testing is used for laser diode crystal grain of test and whether satisfies predetermined photoelectric characteristic, and this laser diode crystal grain is used for being packaged into laser diode after satisfying this predetermined photoelectric characteristic, and this method of testing may further comprise the steps:
Calculate a plurality of current values of the electric current of a stepping growth according to this predetermined photoelectric characteristic;
Obtain the control parameter;
Provide this electric current according to these a plurality of current values and this control parameter to this laser diode crystal grain;
Be carried on this laser diode crystal grain the magnitude of voltage of corresponding each current value and measure the optical power value of each current value of correspondence that this laser diode crystal grain sends according to this control parameter measurement;
Generate a tables of data and a curve map of the photoelectric characteristic of this laser diode crystal grain of expression according to these a plurality of current values, magnitude of voltage and optical power value;
Judge according to this tables of data and this curve map whether the photoelectric characteristic of this laser diode crystal grain satisfies this predetermined photoelectric characteristic, thereby judge whether this laser diode crystal grain is qualified.
8. method of testing as claimed in claim 7 is characterized in that, this method of testing also comprises:
Take the image of this laser diode crystal grain; And
Whether there is bad order according to this laser diode crystal grain of this graphical analysis, if this laser diode crystal grain is to have bad order, then do not encapsulate this laser diode crystal grain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210056436 CN103308837A (en) | 2012-03-06 | 2012-03-06 | Device and method for testing laser diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210056436 CN103308837A (en) | 2012-03-06 | 2012-03-06 | Device and method for testing laser diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103308837A true CN103308837A (en) | 2013-09-18 |
Family
ID=49134268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210056436 Pending CN103308837A (en) | 2012-03-06 | 2012-03-06 | Device and method for testing laser diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103308837A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106841965A (en) * | 2016-12-16 | 2017-06-13 | 重庆航伟光电科技有限公司 | Semiconductor laser amplitude test device |
| CN117074836A (en) * | 2023-10-12 | 2023-11-17 | 成都明夷电子科技有限公司 | Laser detection method, detector, electronic equipment and storage medium |
-
2012
- 2012-03-06 CN CN 201210056436 patent/CN103308837A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106841965A (en) * | 2016-12-16 | 2017-06-13 | 重庆航伟光电科技有限公司 | Semiconductor laser amplitude test device |
| CN117074836A (en) * | 2023-10-12 | 2023-11-17 | 成都明夷电子科技有限公司 | Laser detection method, detector, electronic equipment and storage medium |
| CN117074836B (en) * | 2023-10-12 | 2024-03-12 | 成都明夷电子科技有限公司 | Laser detection method, detector, electronic equipment and storage medium |
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Application publication date: 20130918 |