CN103308520B - Evaluation method for polycrystal battery technical level and slice source - Google Patents
Evaluation method for polycrystal battery technical level and slice source Download PDFInfo
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- CN103308520B CN103308520B CN201310273090.7A CN201310273090A CN103308520B CN 103308520 B CN103308520 B CN 103308520B CN 201310273090 A CN201310273090 A CN 201310273090A CN 103308520 B CN103308520 B CN 103308520B
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- 238000011156 evaluation Methods 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 77
- 238000005401 electroluminescence Methods 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 238000005424 photoluminescence Methods 0.000 claims abstract description 18
- 238000012360 testing method Methods 0.000 claims abstract description 13
- 230000007547 defect Effects 0.000 claims abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 238000013139 quantization Methods 0.000 claims description 15
- 230000014509 gene expression Effects 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000003908 quality control method Methods 0.000 claims description 2
- 230000009466 transformation Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides an evaluation method for a polycrystal battery technical level and a slice source. According to the method, defect information of a silicon slice is extracted through electroluminescence or photoluminescence, so that quantified parameters capable of representing the quality of the silicon slice can be obtained. Furthermore, based on the quantified parameters and a test for voltage of an open circuit (Voc) of a battery, the influence of the battery technical level and a polycrystal silicon slice source on the Voc can be separated.
Description
Technical field
The invention belongs to polycrystalline solar cell field, particularly relate to the technological level of polycrystalline solar cell and the evaluation method of sheet source quality.
Background technology
In polysilicon solar cell field, polysilicon chip quality and battery process have impact to battery performance.Therefore, how from battery performance (as V
oc) in assess the impact of polysilicon chip sheet source quality and battery process respectively, to monitor film source and battery process level simultaneously, be the problem that industry is devoted to solve always.
Summary of the invention
The present invention proposes the evaluation method of a kind of battery process and polysilicon chip film source.The method utilizes the defect information in electroluminescence or photoluminescence extraction silicon chip, thus obtains the quantization parameter that can be used for characterizing Si wafer quality.Further, the present invention is based on described quantization parameter, and in conjunction with battery open circuit voltage V
octest, isolates battery process level and polysilicon chip film source to V
ocaffect size.
According to a first aspect of the invention, proposing a kind of quantization parameter that extracts for characterizing the method for the Si wafer quality of polycrystalline battery, comprising: the electroluminescence EL image or the photoluminescence PL image that obtain polycrystalline battery; Process described EL or PL image, to obtain minority carrier life time image; The minority carrier life time parameter LT of described polycrystalline battery is calculated based on described minority carrier life time image; And use described minority carrier life time parameter LT as the quantization parameter of Si wafer quality.
In said method, process described EL image or PL image in the following manner to obtain minority carrier life time image: maximal value filtering is carried out to described EL image or PL image; Filtered image and original image are subtracted each other; And optional linear transformation is carried out to the image after subtracting each other, and remove grid line part with mask.
In said method, the form of described maximal value filtering is: β
i,j=M
i,j-max (R
i,j), wherein M
i,jrepresent the brightness of pixel (i, j) current to be investigated, max (R
i,j) represent that current waiting investigates the maximal value in neighborhood of pixels, Β
i,jthe difference of both expressions.
In said method, on described minority carrier life time image, the brightness of each pixel corresponds to the minority carrier life time of this location of pixels on silicon chip; On described minority carrier life time image, the brightness of each pixel corresponds to the permanent defects information of this location of pixels on silicon chip.
In said method, calculate average minority carrier lifetime, to obtain described minority carrier life time parameter LT based on described minority carrier life time image.
According to a second aspect of the invention, a kind of online polysilicon chip film source quality control method of solar cell is proposed, according to the method for first aspect, online acquisition minority carrier life time parameter LT; And use described minority carrier life time parameter LT as the quantization parameter of Si wafer quality, compare the mass discrepancy between film source.
According to a third aspect of the invention we, propose a kind of polysilicon chip sheet source quality of assessing to the method for the impact of polycrystalline battery open circuit voltage, comprising: the standard polysilicon sheet selecting batch, under standard technology, make the standard polycrystalline battery obtaining batch; To in the standard polycrystalline battery of described batch each, use the method for first aspect to obtain the quantization parameter of corresponding minority carrier life time parameter LT as Si wafer quality; To in the standard polycrystalline battery of described batch each, measure its corresponding open-circuit voltage V
oc; And based on the minority carrier life time parameter LT of the standard polycrystalline battery of described batch and open-circuit voltage V
oc, simulate one parsing formula: V
oc=kLT+b, wherein b is constant, and coefficient k characterizes silicon chip sheet source quality to V
ocimpact.
In said method, choose, to select the standard polysilicon sheet of described batch between waiting after multiple silicon rod slicing.
According to a forth aspect of the invention, propose a kind of manufacture craft assessing solar cell to the method for the impact of polycrystalline battery open circuit voltage, comprising: according to the method for the third aspect, obtain V under standard film technique
ocwith the relational expression V of LT
oc=kLT+b; To test in the batch polycrystalline battery made with technique to be assessed the open-circuit voltage V of each
oc1; According to the method for first aspect, to test in described batch polycrystalline battery the minority carrier life time parameter LT1 of each; Calculate the mean value of LT1, this mean value is substituted into described relational expression V
oc=kLT+b, obtains the average open-circuit voltage V under standard film technique
oc0; And with V
oc1with V
oc0between difference α characterize open-circuit voltage V between technique to be assessed and standard film technique
ocdifference.
According to a fifth aspect of the invention, propose a kind of online process monitoring method of solar cell, comprising: the method according to fourth aspect obtains difference α online; And judge the stability of technique to be assessed compared to standard film technique based on described difference α.。
Accompanying drawing explanation
Comprising accompanying drawing is further understand the present invention for providing, and they are included and form a application's part, and accompanying drawing shows embodiments of the invention, and plays the effect explaining the principle of the invention together with this instructions.In accompanying drawing:
Fig. 1 a illustrates electroluminescence (EL) image of polycrystalline battery according to an embodiment of the invention.
The minority carrier life time figure that Fig. 1 b obtains after illustrating and processing according to the image of embodiments of the invention to Fig. 1 a.
Fig. 2 illustrates the relation between the open-circuit voltage of standard film and minority carrier life time.
Embodiment
Below in conjunction with accompanying drawing, detailed the present invention is described, comprise the present invention based on know-why, and typical embodiment.
The application's proposed invention can comprise following aspect:
1. image obtains
According to the present invention, can obtain electroluminescence (EL) or photoluminescence (PL) image of polycrystalline battery, the two image is similar.Fig. 1 (a) example gives electroluminescence image.The position of image is dark can be 16 or higher.
2. image procossing
According to the information extraction of permanent defects in image procossing of the present invention mainly EL/PL image.PL or EL image is all the result of radiation recombination, therefore its pixel brightness should be proportional to excess carriers Δ n and background doping level (p
0or n
0).When implantation concentration is certain, Δ n is relevant with the minority carrier life time of pixel position.Some crystal structure defects yardstick in polycrystalline is little, compound ability strong, and thus can bring the sudden change of Δ n on space scale, thus corresponding sudden change can occur in pixel brightness.And background doping level is caused by the fractional condensation of casting ingot process and the diffusion of battery process, the feature of these two kinds of techniques all determines that it can not cause EL(PL) sudden change of brightness, and only can bring brightness disproportionation in large scale.Embodiments of the invention illustratively adopt 50 × 50 maximal value filtering, and after subtracting each other with original image, (this step is optional in linear conversion again, linear change is intended to transfer luminance difference to minority carrier life time based on the calibration value of hypothesis) and remove grid line part with mask, obtain minority carrier life time image (see Fig. 1 b), and calculate its average minority carrier lifetime, obtain minority carrier life time parameter LT.The form of maximal value filtering is as follows:
β
i,j=M
i,j-max (R
i,j) (formula 1)
In above-mentioned formula 1, M
i,jrepresent the brightness of pixel (i, j) current to be investigated, max (R
i,j) represent that current waiting investigates the maximal value in neighborhood of pixels, Β
i,jthe difference of both expressions.
By above-mentioned process, go out to extract minority carrier life time parameter LT from EL/PL image, it can be used as the quantization parameter of Si wafer quality.
Supplementary notes: the brightness value on minority carrier life time image is proportional to minority carrier life time in principle.This method investigates the relative value that departs from of brightness, therefore need not demarcate the two concrete ratio concrete, directly characterize minority carrier life time with brightness value.
3. standard cell built-in testing and typical curve obtain
According to the present invention, can choose a group system and select polysilicon chip, such as 50-100 sheet, these standard films have different quality grades.Choosing method can be choose at equal intervals after multiple silicon rod slicing, to ensure that Si wafer quality is representative.Silicon chip is once dropped into a certain stabilization process and make cell piece.Test the V of every a slice battery
ocwith EL image, and calculate its minority carrier life time parameter LT by the method for step 2.By the V of correspondence
ocplot scatter diagram with LT, once relation as shown in Figure 2 can be obtained, simulate its analytic expression by once relation
V
oc=kLT+b (formula 2)
In above formula, b is constant, and coefficient k represents the Si wafer quality open-circuit voltage V characterized with LT
ocimpact.Thus, for the silicon chip film source of different quality, after knowing its minority carrier life time parameter LT, its quality good or not can be judged, and can judge that mass discrepancy is to battery performance (V
oc) affect size.
4. the technique of any batch of polycrystalline battery and film source evaluation
According to the present invention, the battery of desirable unknown technique and film source is a collection of, measures the V of battery
oc1, and according to EL(PL) image calculating minority carrier life time parameter LT1.Calculate the mean value of LT1, this mean value is substituted into formula 2 and calculates V
oc0, make α=V
oc0-V
oc1, then α is by being surveyed between cell piece and standard cell sheet because technique causes V
ocdifference.The size of monitoring α, can evaluate the stability of technique.Such as, when the size of α is more than a threshold value, then can think that unknown technique to be evaluated has compared relatively large deviation with standard technology.
As mentioned above, minority carrier life time parameter LT itself can represent Si wafer quality, therefore, can be judged the quality of Si wafer quality by monitoring parameter LT.Also the LT difference △ LT of (between silicon slice under test and reference silicon wafer) between two kinds of film sources can be substituted into formula 2, obtain between film source and amount to out pressure difference △ V
oc.
The foregoing describe many aspects of the present invention.Foregoing description mode only for ease of stating know-why of the present invention and design, and should not be considered as limitation of the scope of the invention.Such as, the foregoing describe the scheme that technique and the film source of polycrystalline battery are all evaluated, but it will be understood by those skilled in the art that the present invention should be contained and separately technique is evaluated, and the independent embodiment that sheet source quality is evaluated.
Embodiment 1:
Embodiment 1 is intended to extract quantization parameter for characterizing the Si wafer quality of polycrystalline battery.Embodiment 1 can comprise:
1) the EL/PL image of solar cell is obtained;
2) EL/PL image is processed, to extract minority carrier life time parameter LT, as the quantization parameter of the Si wafer quality of sign polycrystalline battery.
Further, based on minority carrier life time parameter LT, the quality of silicon chip film source can be judged, can the quality of on-line monitoring silicon chip film source.
Embodiment 2:
Embodiment 2 is intended to evaluate polysilicon chip quality to the impact of the open-circuit voltage of solar cell.Embodiment 1 can comprise:
1) select certain batch silicon wafer, certain technique once makes cell piece.
2) test battery V
ocand EL, and calculate its minority carrier life time parameter LT.
3) by Fig. 2 Plays film source V
ocknown with LT curve, LT and the V calculated by step 2
oclinear correlation.Therefore, can by once relation matching V
ocwith minority carrier life time LT relation, obtain unit LT to battery V
ocimpact (k in formula 2).
Embodiment 3:
Embodiment 3 is intended to evaluate cell making process to the impact of the open-circuit voltage of solar cell.Embodiment 3 can comprise:
1) under the prerequisite of known standard film open-circuit voltage-Life Relation (in as Fig. 2 fit curve equation),
Test the polycrystalline cell piece of one group of unknown silicon chip film source and battery process, obtain the V of every sheet battery
oc1and LT1.
2) calculate the mean value of LT1, this mean value is substituted into formula 2, calculates the average V under standard film technique
oc0.
3) V
oc1with V
oc0difference α and V between tested battery and standard film technique
ocdifference.
Further, based on difference α, can the stability of manufacture craft of on-line monitoring solar cell.
The effect of invention
The present invention utilizes the EL(PL of cell piece) image zooming-out goes out quantization parameter for characterizing the Si wafer quality of polycrystalline battery.Further, based on extracted quantization parameter, and in conjunction with V
octest, the present invention can judge the quality of battery process and polysilicon chip film source rapidly.Two kinds of method of testing test durations are all less than 1 second, can be made into online mode monitoring battery technology stability and multi-wafer source quality quality.
Claims (10)
1. extracting quantization parameter for characterizing a method for the Si wafer quality of polycrystalline battery, comprising:
Obtain electroluminescence EL image or the photoluminescence PL image of polycrystalline battery;
Process described EL or PL image, to obtain minority carrier life time image, wherein the process of described EL or PL image is comprised: maximal value filtering is carried out to described EL image or PL image, filtered image and original image are subtracted each other, optional linear transformation is carried out to the image after subtracting each other, and removes grid line part with mask;
The minority carrier life time parameter LT of described polycrystalline battery is calculated based on described minority carrier life time image; And
Use described minority carrier life time parameter LT as the quantization parameter of Si wafer quality.
2. the method for claim 1, is characterized in that, the form of described maximal value filtering is:
β
i,j＝M
i,j-max(R
i,j)，
Wherein M
i,jrepresent the brightness of pixel (i, j) current to be investigated, max (R
i,j) represent that current waiting investigates the maximal value in neighborhood of pixels, Β
i,jthe difference of both expressions.
3. the method for claim 1, is characterized in that, on described minority carrier life time image, the brightness of each pixel corresponds to the minority carrier life time of this location of pixels on silicon chip.
4. the method for claim 1, is characterized in that, on described minority carrier life time image, the brightness of each pixel corresponds to the permanent defects information of this location of pixels on silicon chip.
5. the method for claim 1, is characterized in that, calculates average minority carrier lifetime, to obtain described minority carrier life time parameter LT based on described minority carrier life time image.
6. an online polysilicon chip film source quality control method for solar cell, comprising:
Method according to any one of claim 1-5, online acquisition minority carrier life time parameter LT; And
Use described minority carrier life time parameter LT as the quantization parameter of Si wafer quality, compare the mass discrepancy between film source.
7. assess polysilicon chip sheet source quality to a method for the impact of polycrystalline battery open circuit voltage, comprising:
Select the standard polysilicon sheet of batch, under standard technology, make the standard polycrystalline battery obtaining batch;
To in the standard polycrystalline battery of described batch each, use method any one of claim 1-5 to obtain the quantization parameter of corresponding minority carrier life time parameter LT as Si wafer quality;
To in the standard polycrystalline battery of described batch each, measure its corresponding open-circuit voltage V
oc; And
Based on minority carrier life time parameter LT and the open-circuit voltage V of the standard polycrystalline battery of described batch
oc, simulate one parsing formula:
V
oc＝k·LT+b
Wherein b is constant, and coefficient k characterizes silicon chip sheet source quality to V
ocimpact.
8. method as claimed in claim 7, is characterized in that, choose between waiting after multiple silicon rod slicing, to select the standard polysilicon sheet of described batch, the polysilicon chip of described batch has two or more quality grades.
9. the manufacture craft assessing solar cell, on a method for the impact of polycrystalline battery open circuit voltage, comprising:
Method according to claim 7 or 8, V under acquisition standard film technique
ocwith the relational expression V of LT
oc=kLT+b;
To test in the batch polycrystalline battery made with technique to be assessed the open-circuit voltage V of each
oc1;
Method according to any one of claim 1-5, to test in described batch polycrystalline battery the minority carrier life time parameter LT1 of each;
Calculate the mean value of LT1, this mean value is substituted into described relational expression V
oc=kLT+b, obtains the average open-circuit voltage V under standard film technique
oc0; And
With V
oc1with V
oc0between difference α characterize open-circuit voltage V between technique to be assessed and standard film technique
ocdifference.
10. an online process monitoring method for solar cell, comprising:
Method according to claim 9 obtains difference α online; And
The stability of technique to be assessed compared to standard film technique is judged based on described difference α.
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| FR3015770B1 (en) * | 2013-12-19 | 2016-01-22 | Commissariat Energie Atomique | METHOD AND SYSTEM FOR QUALITY CONTROL OF PHOTOVOLTAIC CELLS |
| CN104866975B (en) * | 2015-06-01 | 2018-04-24 | 山东大海新能源发展有限公司 | A kind of quality judging method of polycrystal silicon ingot |
| CN106206860A (en) * | 2016-09-14 | 2016-12-07 | 无锡尚德太阳能电力有限公司 | Solve the battery stepping method of crystal silicon solar assembly EL light and shade problem |
| CN108445006B (en) * | 2018-04-11 | 2020-01-10 | 镇江仁德新能源科技有限公司 | Comparison method for photoelectric conversion efficiency of whole ingots of different polycrystalline silicon ingots |
| CN112786720A (en) * | 2019-11-05 | 2021-05-11 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic cell piece, photovoltaic module and preparation method thereof |
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Address after: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee after: trina solar Ltd. Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee before: trina solar Ltd. |