CN103303010B - The method of using a phase change material to produce a patterned layer of target material on a substrate - Google Patents

The method of using a phase change material to produce a patterned layer of target material on a substrate Download PDF

Info

Publication number
CN103303010B
CN103303010B CN 201310079615 CN201310079615A CN103303010B CN 103303010 B CN103303010 B CN 103303010B CN 201310079615 CN201310079615 CN 201310079615 CN 201310079615 A CN201310079615 A CN 201310079615A CN 103303010 B CN103303010 B CN 103303010B
Authority
CN
Grant status
Grant
Patent type
Application number
CN 201310079615
Other languages
Chinese (zh)
Other versions
CN103303010A (en )
Inventor
S.林布
U.斯里尼瓦桑
Original Assignee
帕洛阿尔托研究中心公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Abstract

本发明为利用相变材料进行图案化的方法。 The present invention is a method of using a phase change material is patterned. 通过沉积印刷图案化掩膜结构在晶圆之上产生图案化层。 By depositing print-patterned mask structure produce a patterned layer over the wafer. 被赋予能量的目标材料颗粒被沉积在晶圆和印刷图案化掩膜之上,使得投射在掩膜结构上的所述目标材料颗粒进入掩膜结构本体并且最小程度地聚集在掩膜结构的表面上(如果聚集的话),并且另外地,目标材料的颗粒作为基本统一的层聚集在晶圆之上。 Is given energy target material particles are deposited on the print-patterned mask and the wafer, such that the target material particles are projected on the mask structure into the structure of the mask body and minimally gather surface of the mask structure (if it aggregates), and additionally, the particles of the target material as a substantially uniform layer of aggregate over the wafer. 其中包括目标材料颗粒的印刷图案化掩膜结构被去除,留下基本统一的目标材料层作为晶圆之上的图案化层。 Includes print-patterned mask structure of the target material particles are removed, leaving a substantially uniform layer of the target material as a patterned layer on the wafer.

Description

利用相变材料在基板上产生图案化的目标材料层的方法 The method of using a phase change material to produce a patterned layer of target material on a substrate

[0001]相关申请的交叉引用 CROSS [0001] REFERENCE TO RELATED APPLICATIONS

[0002] 本申请是用于2007年12月13日提交的序列号为11/956,205、名称为“Method forPatterning using Phase-Change Material”的专利特许证的共同未决的美国申请的部分延续案,该美国申请通过参弓I的方式并入并且主张其优先权。 [0002] This application is a serial number for December 13, 2007, filed 11 / 956,205, entitled "Method forPatterning using Phase-Change Material" the letters patent of the United States part of co-pending continuation application case, the US application is incorporated by reference I bow manner and claims priority.

技术领域 FIELD

[0003]本公开涉及例如在半导体装置制造中形成精细特征的印刷层的方法,并且更具体地,涉及在材料沉积期间使用印刷图案化相变材料用于区域掩膜的方法和设备。 [0003] The present disclosure relates to a method, for example, fine features printed layer is formed in a semiconductor device fabrication, and more particularly, relates to the use of a printed pattern during the phase change material deposition apparatus and method area for the mask material.

背景技术 Background technique

[0004]当前,在晶圆处理中,例如在半导体晶圆处理中的图案化层的制造中,存在许多众所周知的用于选择性材料沉积的工艺。 [0004] Currently, in wafer processing, such as the manufacture of the patterned layer in a semiconductor wafer processing, there are many well known processes for selective material deposition. 在此关注的一种这样的工艺称为剥离工艺(liftoffP r ο cess )。 One such process is referred to herein concern a stripping process (liftoffP r ο cess). 在典型的剥离工艺中,抗蚀结构形成在晶圆的某个区域之上,以阻挡材料在该区域中的沉积。 In a typical lift-off process, the resist structure formed over an area of ​​the wafer, to the deposition material in the barrier region. 然后将该关注的材料沉积在晶圆的至少一些部分上,包括沉积在抗蚀结构上。 The material of interest was then deposited on at least some portions of the wafer, including resist is deposited on the structure. 然后例如通过溶剂溶解抗蚀结构,从而既去除抗蚀结构又去除沉积在抗蚀结构之上的所关注的材料。 Then, for example, by a solvent dissolving the resist structure so that both the structure and removing the resist removing material of interest is deposited on the resist structure. 这样,可以在不蚀刻的情况下获得图案在晶圆表面上的限定。 Thus, it is possible to obtain a pattern defined on a surface of a wafer without etching. 由于剥离工艺是对更常见的光刻法蚀刻工艺的替代,所以剥离工艺通常用来限定难以蚀刻的材料(例如,金)的几何形状。 Since the stripping process is a more common alternative to photolithography etching process, the stripping process is typically used to define the material (e.g., gold) is difficult to etch geometry.

[0005]剥离工艺的一个要求在于,在形成抗蚀结构的过程中,必须提供用于在沉积的关注材料下引入溶剂的装置,使得溶剂可以溶解下方的抗蚀结构。 A request [0005] stripping process is that during the formation of the resist structure, means must be provided for introducing the solvent under the deposited material of interest, so that the solvent can dissolve the resist underlying structure. 这一般要求抗蚀结构比沉积的关注材料层的厚度更高(即,更厚)。 This generally requires more attention than the resist structure deposited material layer thickness (i.e., thicker). 另外,抗蚀结构一般在沉积期间或沉积之后被图案化,使得溶剂可以接触尽可能多的抗蚀结构,并且使得溶剂尽可能快地溶解抗蚀结构,例如通过向抗蚀结构提供凹的侧壁来实现。 Further, after the resist structure generally during or after deposition is patterned, so that the solvent may contact the resist structure as much as possible, and so that the solvent dissolves the resist structure as quickly as possible, such as by providing the concave side of the resist structure wall to achieve. 在图7A和7B中示出了在该过程中使用的结构的示例。 In FIGS. 7A and 7B shows an example of the process used in this structure. 参照图7A,基板50在其上上形成抗蚀结构54和目标材料层56,其中,抗蚀结构54被图案化为具有凹的侧壁,目标材料层56形成在抗蚀结构54之上使得第一部分56a覆盖抗蚀结构54并且第二部分56b直接地覆盖基板52(或者可替代地,覆盖未示出的中间层)。 7A, a substrate 50 is formed on the upper resist layer structure 54 and target material 56, which is patterned resist structure 54 has a concave side wall, such that the object material layer 56 is formed on the resist structure 54 the first portion 56a covering the resist structure 54 and a second portion 56b directly covers the substrate 52 (or alternatively, to cover the intermediate layer is not shown). 由于抗蚀结构54的凹的侧壁外形,溶剂可以被引入到区域58中,从而溶解并去除抗蚀结构54并以该溶剂去除层56的部分56a。 Since the recessed sidewall profile of the resist structure 54, the solvent may be introduced into the region 58 thereby dissolve and remove the resist structures 54 and 56a to remove a portion of the solvent layer 56. 在图7B中示出了剥离步骤之后的装置。 In the apparatus shown in FIG. 7B step after peeling.

[0006]尽管剥离是用于晶圆图案化的有效工艺,但该工艺具有若干限制。 [0006] While the stripping process is effective for patterned wafers, but the process has several limitations. 首先,抗蚀结构必须被形成为显著地比目标材料层高,或者相反地,相对于抗蚀结构的厚度,目标层的厚度必须制得薄些。 First, the resist structures must be formed to be significantly higher than the target storey material, or conversely, the thickness, the thickness of the target layer to be made thin relative to the structure of some of the resist. 其次,抗蚀结构必须在沉积期间或沉积之后被图案化从而具有凹的侧壁外形。 Next, resist structures must be patterned so as to have a concave shape in the sidewall deposition during or after deposition. 这些限制中的每一个都导致了该晶圆图案化工艺的相对较高的成本和复杂性。 Each of these limitations have led to the relatively high cost and complexity of the wafer patterning process. 另外,对有用的抗蚀结构的宽度并因此对掩膜区域的宽度存在限制。 Further, and thus there is a limit on the useful width of the mask area width of the resist structure. 如果掩膜结构太宽,则溶剂需要大量的时间来对结构进行完全的沉切,从而导致溶剂对结构的其他部分的不期望的损害。 If the mask structure is too wide, the solvent requires a lot of time to complete the structure under cut, causing undesirable damage to the solvent portion of the other structure. 因此,在本领域存在对于这样的工艺的需求:在不需要蚀刻且不需要关于目标材料层的厚度或掩膜区域的宽度的限制的情况下,提供图案化的晶圆的工艺。 Thus, in the art exists for such a process needs: without the need for etching and without limitation on the width or thickness of the target region of the mask material layer, providing a wafer patterning process.

发明内容 SUMMARY

[0007]因此,本公开针对一种用于产生图案化晶圆的系统和方法,该系统和方法不要求掩膜结构比要被图案化的目标材料层显著地高。 [0007] Accordingly, the present disclosure is directed to a system and method for producing patterned wafers, the system and method does not require a mask structure is significantly higher than the target material layer to be patterned. 另外,抗蚀侧壁外形不需要是凹的。 Further, the resist sidewall shape need not be concave. 此外,本公开不需要在沉积之后对掩膜结构图案化。 Further, the present disclosure does not require patterned after deposition mask structure. 另外,本公开并不限制要被掩膜的区域的宽度。 Further, the present disclosure is not limited to the width of the masked region.

[0008]此外,掩膜结构的去除仅仅取决于结构的厚度,并不取决于其面积大小。 [0008] Further, the structure mask is removed depends only on the thickness of the structure, it does not depend on the size of the area. 与目标材料层被覆盖相反,掩膜结构的顶部被暴露。 And the target material layer is covered with an opposite, top mask structure is exposed. 因此,不需要沉切,并且掩膜能够从上被腐蚀。 Thus, no under cut, and the mask can be from corrosion. 因此,掩膜的厚度将决定去除的速率。 Thus, the thickness of the mask will determine the rate of removal. 所以,与现有技术的掩膜结构相比,根据本公开的掩膜结构的去除的复杂性较低且成本较低。 Therefore, as compared with the prior art mask configuration, depending on the complexity of removing the mask structure of the present disclosure is low and low cost. 因此,本公开克服了前面描述的剥离工艺的许多限制。 Accordingly, the present disclosure overcomes many of the limitations previously described lift-off process.

[0009]根据本公开的一个方面,印刷图案化掩膜结构形成在基板上。 [0009] According to one aspect of the present disclosure, print-patterned mask structure is formed on the substrate. 该掩膜结构可以直接形成在基板上或者形成在形成于基板之上的中间层上。 The mask structure may be formed directly on the substrate or formed on the intermediate layer formed on the substrate over. 该掩膜结构可以通过使用喷墨型打印头沉积相变材料(例如,蜡)的单个液滴来形成。 The mask structure may be a single droplet phase change material by using an ink jet type printhead deposition (e.g., wax) is formed. 然后,将目标材料沉积在掩膜结构之上及沉积在掩膜结构形成于其上(例如,基板)的层上。 Then, the target material is deposited over the structure and depositing a mask on a mask structure formed thereon (e.g., the substrate) layer. 根据一个实施例,目标材料利用充分的能量,例如利用动能被沉积,使得投射在掩膜结构上的材料的颗粒实际上进入掩膜结构的本体,与累积成为掩膜结构的表面之上的层相反。 According to one embodiment, the use of target material sufficient energy, kinetic energy is deposited using, for example, such that the particulate material is projected on the mask body structure to actually enter the mask structure, and a layer to accumulate over the surface of the mask structure in contrast. 不同于在掩膜结构之上,该目标材料累积成为统一的层。 Unlike the mask over the structure, the target material into a unified accumulation layer. 目标材料层因此在掩膜结构的区域中是不连续的。 Thus object material layer in the region of the mask structure is discontinuous. 具有嵌入的目标材料的掩膜结构然后可以通过溶剂、蚀刻剂、和/或加热被去除,留下先前被掩膜结构占据的区域敞开并且没有目标材料。 A mask having a structure of the target material embedded in the solvent may then be removed by the etchant, and / or heating, leaving the previously open region of the mask and the structures occupy no target material.

[0010]根据本公开的另一方面,目标材料可以被加热,使得其热能允许掩膜结构的区域中的材料的颗粒进入掩膜结构的本体。 [0010] According to another aspect of the present disclosure, the target material may be heated, so that the thermal energy which allows the particulate material in the region of the mask structure into the structure of the mask body. 可替代地,或者作为补充,掩膜结构可以被加热以有助于在沉积期间引入目标材料。 Alternatively, or in addition, the mask structure may be heated to facilitate the introduction of target material during deposition.

[0011 ]根据本发明的一个方面,提供一种在基板之上产生图案化的目标材料层的方法,包括:在所述基板之上形成印刷图案化掩膜结构,使得所述掩膜结构的第一表面朝向所述基板定向并且所述掩膜结构的第二表面背离所述基板定向;利用充分的能量将所述目标材料的颗粒导向所述基板和所述掩膜结构,使得所述颗粒在所述第二表面处进入所述掩膜结构、所述目标材料基本上不聚集在所述第二表面上、所述目标材料作为目标材料层聚集在所述基板之上而不是聚集在所述掩膜结构之上;以及连同所述掩膜结构中的目标材料颗粒一起去除所述掩膜结构,使得所述基板之上而不是所述掩膜结构之上的所述目标材料层作为图案化层而保留。 [0011] In accordance with one aspect of the present invention, there is provided a method of producing a target material layer is patterned on a substrate, comprising: forming a print-patterned mask structure over the substrate, such that the mask structure the first surface is oriented toward the substrate and the second surface of the substrate is oriented away from the mask structure; using sufficient energy to the target material particles are directed at the substrate and the mask structure, such that the particles the second surface into the mask structure, the target material is not substantially accumulated on the second surface, the target material as a target material layer over the substrate aggregate than the aggregate in a mask over said structure; and removing the mask structure along the target material particles together with the mask structure, such that the target material layer on the above substrate as a pattern instead of the mask structure layer reserved.

[0012]按照一个示例,在所述的在基板之上产生图案化的目标材料层的方法中,所述颗粒被提供充分的动能以便使所述颗粒进入所述掩膜结构还包括将所述目标材料的颗粒引入到所述基板和所述掩膜结构附近;以及向所述引入的颗粒给予动能,以便所述给予的动能使所述颗粒进入所述掩膜结构。 [0012] According to an example, in the process of generating the object material layer patterned on the substrate, the particles provide sufficient kinetic energy to the particles into the structure further comprises a mask particulate target material is introduced into the vicinity of the substrate and the mask structure; and administering to the kinetic energy of the incoming particles, so that the kinetic energy of the particles administered into the mask structure.

[0013]按照又一个示例,在所述的在基板之上产生图案化的目标材料层的方中,所述颗粒被提供充分的热能以便使所述颗粒进入所述掩膜结构还包括将所述目标材料的颗粒引入到所述基板和所述掩膜结构附近;以及向所述引入的颗粒给予热能,以便所述给予的热能使所述颗粒进入所述掩膜结构。 [0013] According to another example, in the prescription generating object material layer patterned on the substrate, said particles providing sufficient thermal energy so as to mask the said particles into the structure further comprises said particulate material is introduced into the vicinity of the target to the substrate and the mask structure; and administering thermal energy to the introduced particles, to enable the heat administered the particles into the mask structure.

[0014]按照再一个示例,根据本发明所述的在基板之上产生图案化的目标材料层的方法,其中所述颗粒被提供充分的动能和热能以便使所述颗粒进入所述掩膜结构。 [0014] According to yet another example, a method of generating a target material layer is patterned on a substrate according to the present invention, wherein the particles provide sufficient kinetic and thermal energy to the particles entering the mask structure . 进一步,所述颗粒被提供充分的动能和热能以便使所述颗粒进入所述掩膜结构包括将所述目标材料的颗粒引入到所述基板和所述掩膜结构附近;以及向所述引入的颗粒给予动能和热能,以便所述给予的动能和热能使所述颗粒进入所述掩膜结构。 Further, the particles provide sufficient kinetic and thermal energy to the particles entering the mask structure comprises introducing particles of the target material to the vicinity of the substrate and the mask structure; and introducing into said given particle kinetic and thermal energy, so as to give said kinetic and thermal energy of the particles into the mask structure.

[0015]根据本发明所述的在基板之上产生图案化的目标材料层的方法,还包括在将所述目标材料的颗粒导向所述基板和所述掩膜结构之前对所述印刷图案化掩膜结构进行加热,使得所述热有助于所述目标材料的颗粒进入到所述印刷图案化掩膜结构中。 [0015] The method of producing a target material layer is patterned on a substrate according to the present invention, further comprising a guide prior to the particles of the target material structure of the substrate and the mask of the printed pattern mask structure is heated so that the particles of the target material facilitate heat enters into the print-patterned mask structure. 其中,在将所述目标材料的颗粒导向所述基板和所述掩膜结构之前,所述印刷图案化掩膜结构被加热到60°C至70°C的范围内的温度,使得所述印刷图案化掩膜结构被软化但不熔化。 Wherein, prior to said target material particle directing the substrate and the mask structure, said print-patterned mask structure is heated to a temperature within a 60 ° C to 70 ° C is such that the printing patterned mask structure is softened but not melted.

[0016]根据本发明的一个方面,还提供一种在基板之上产生图案化的目标材料层的方法,包括以下步骤:在所述基板之上形成印刷图案化掩膜结构,使得所述掩膜结构的第一表面朝向所述基板定向并且所述掩膜结构的第二表面背离所述基板定向;将所述目标材料的颗粒导向所述基板和所述掩膜结构,所述颗粒被提供充分的动能和热能,并且所述掩膜结构是可充分渗透的,使得投射在所述掩膜结构上的所述目标材料的所述颗粒进入所述掩膜结构的所述第二表面并且基本上不聚集在所述掩膜结构的所述第二表面上,并且所述目标材料颗粒作为目标材料层另外聚集在所述基板之上而不是聚集在所述掩膜结构之上;以及在不需要沉切的情况下,通过溶解所述印刷图案化掩膜结构来连同所述印刷图案化掩膜结构中的目标材料颗粒一起去除所述印刷图案化掩膜结构 [0016] In accordance with one aspect of the present invention, there is provided a method of generating a target material layer is patterned on a substrate, comprising the steps of: forming a print-patterned mask structure over the substrate, such that the mask a first surface of the film structure is oriented toward the substrate and the second surface facing away from the substrate mask structure orientation; particle directing the target material to the substrate and the mask structure, said particles are provided sufficient kinetic energy and thermal energy, and the mask structure is sufficiently permeable so that the particles are projected on the target material in the mask structure into the second structure and the surface of the mask substantially It does not accumulate on the surface of the mask of the second structure, and the target material particles as the object material layer over the substrate otherwise accumulate rather than collect on the mask structure; and without Shen cut where necessary, to the target material particles together with the print-patterned mask structure by dissolving the print-patterned mask structure removing said print-patterned mask structure together ,使得已经聚集在所述基板之上而不是所述掩膜结构之上的所述目标材料层不另外受影响。 Such that it has accumulated on the substrate and not on the mask layer of the target material structure is not otherwise affected.

[0017]该方法中,在将所述目标材料的颗粒导向所述基板和所述掩膜结构之前,所述印刷图案化掩膜结构被加热到60°C至70°C的范围内的温度,使得所述印刷图案化掩膜结构被软化但不熔化,并且进一步使得所述软化有助于所述目标材料的颗粒进入到所述印刷图案化掩膜结构中。 [0017] In this method, prior to the target material particle directing the substrate and the mask structure, said print-patterned mask structure is heated to a temperature within a 60 ° C to 70 ° C is , so that the print-patterned mask structure is softened but not melted, and further such that the particles contribute to a softening of the target material into said print-patterned mask structure.

[0018]该方法中,所述颗粒通过电弧喷涂方法被导向所述基板和所述掩膜结构,所述颗粒包括铜,并且使得所述铜颗粒在至少1085°C的温度投射在所述掩膜结构的所述第二表面上。 [0018] In this method, the particles are directed to the substrate and the mask structure by an arc spraying method, the particles comprise copper, and copper particles at a temperature such that the projection of at least 1085 ° C in the mask the film structure on the second surface.

[0019]根据本发明的又一方面,还提供一种在基板之上产生图案化的目标材料层的方法,包括以下步骤:在所述基板之上形成印刷图案化掩膜结构,使得所述掩膜结构的第一表面朝向所述基板定向并且所述掩膜结构的第二表面背离所述基板定向;将所述目标材料的颗粒导向所述基板和所述掩膜结构,所述颗粒被提供充分的动能和热能,并且所述掩膜结构是可充分渗透的,使得投射在所述掩膜结构上的所述目标材料的所述颗粒进入所述掩膜结构的所述第二表面并且基本上不聚集在所述掩膜结构的所述第二表面上,并且所述目标材料颗粒另外作为目标材料层聚集在所述基板之上而不是聚集在所述掩膜结构之上,从而在所述基板之上形成目标材料的多个不连续区域,目标材料的所述不连续区域被所述掩膜结构分离;以及在不需要沉切的情况下,通过溶解所述 [0019] According to another aspect of the present invention there is also provided a method of generating a target material layer is patterned on a substrate, comprising the steps of: forming a print-patterned mask structure over the substrate, such that the a first surface of the mask toward the substrate structure and the second surface is oriented away from the substrate mask structure orientation; particle directing the target material to the substrate and the mask structure, said particles being provide sufficient kinetic energy and thermal energy, and the mask structure is sufficiently permeable so that the particles are projected on the target material in the mask structure into the second structure and the surface of the mask substantially non-aggregated on the second surface of the mask structure, and the target material particles further aggregate as the target material layer on the substrate, rather than collect on the mask structure, so that a plurality of discrete regions, the target material is discontinuous regions formed over the substrate, the target material is separated from the mask structure; and in the case of cut does not need to sink, by dissolving the 印刷图案化掩膜结构来连同所述印刷图案化掩膜结构中的目标材料颗粒一起去除所述印刷图案化掩膜结构,使得已经聚集在所述基板之上而不是所述掩膜结构之上的所述目标材料层不另外受影响。 Print-patterned mask structure to a target material particles together with the print-patterned mask structure to remove the print-patterned mask structure together, such that has accumulated on the substrate rather than on top of the mask structure of the target material layer is not otherwise affected.

[0020]该方法还包括在将所述目标材料的颗粒导向所述基板和所述掩膜结构之前将所述印刷图案化掩膜结构加热到60°C至70°C的范围内的温度,使得所述热有助于所述掩膜结构的软化并且有助于所述目标材料的颗粒进入到所述印刷图案化掩膜结构中。 [0020] The method further comprising prior to said target material particle directing the substrate and the mask structure of the print-patterned mask structure is heated to 60 ° C to a temperature in the range of 70 ° C, such that the heat helps to soften the structure of the mask and helps target the particulate material into the print-patterned mask structure.

[0021]该方法中,所述颗粒通过电弧喷涂方法被导向所述基板和所述掩膜结构,所述颗粒包括铜,并且使得所述铜颗粒在至少1085°C的温度投射在所述掩膜结构的所述第二表面上。 [0021] In this method, the particles are directed to the substrate and the mask structure by an arc spraying method, the particles comprise copper, and copper particles at a temperature such that the projection of at least 1085 ° C in the mask the film structure on the second surface.

[0022]上面是本公开的许多独特的方面、特征和优点的概述。 [0022] The above is the number of unique aspects, features and advantages of the overview of the present disclosure. 然而,本节内容不是详尽无遗的。 However, this section is not exhaustive. 因此,当根据本文提供的权利要求考虑时,本公开的这些及其他方面、特征和优点将从下面的详细描述及附图中变得更加明显。 Thus, when considering the requirements claimed herein provided, these and other aspects, features and advantages of the present disclosure from the following detailed description and become more apparent from the accompanying drawings.

附图说明 BRIEF DESCRIPTION

[0023]在于此所附的图中,相似的附图标记表示各个附图之间的相似的元件。 [0023] In the drawings appended hereto like reference numerals denote like elements between the various drawings. 在图示的同时,附图并不是按照真实比例绘制的。 While the illustrated drawings are not drawn true to scale. 在附图中: In the drawings:

[0024]图1是用于如可以被用在本公开的一个步骤中的印刷图案化掩膜材料的沉积的系统的图示。 [0024] FIG. 1 is an illustration of a system can be used as a print-patterned mask deposited material in one step in the present disclosure.

[0025]图2是根据本公开的一个实施例在晶圆上形成掩膜结构的过程中该晶圆的图示。 [0025] FIG. 2 is an illustration of embodiment of the wafer process of forming a mask structure on a wafer according to an embodiment of the present disclosure.

[0026]图3是根据本公开的一个实施例的其上形成有掩膜结构且处于将目标材料施加于其的过程中的晶圆的图示。 [0026] FIG. 3 is formed thereon according to one embodiment of the present disclosure have the structure of a mask and a wafer process shown in the target material is applied thereto in.

[0027]图4是可以在本公开的一个步骤中使用的电弧喷涂设备的图示。 [0027] FIG. 4 is an illustration of arc spraying apparatus can be used in a step in the present disclosure.

[0028]图5是根据本公开的步骤在晶圆之上形成目标材料层且使具有嵌入在其中的结合的目标材料的掩膜结构被从晶圆去除的该晶圆的图示。 [0028] FIG. 5 is a layer of target material is formed over the wafer according to the steps of the present disclosure that the mask structure and having a target binding material is embedded therein in illustrating the wafer is removed from the wafer.

[0029]图6是图示了根据本公开的各种步骤的工艺流程图,并且在这些步骤中,虚线表示可选的步骤。 [0029] FIG. 6 is a process flow diagram illustrating the present disclosure according to various steps, and these steps in the broken line represents an optional step.

[0030]图7A和图7B分别是根据本领域众所周知的剥离工艺,正在被图案化的晶圆以及已经被图案化的晶圆的图示。 [0030] FIGS. 7A and 7B are well known in the art according to the stripping process, the wafer being patterned and has been illustrated in FIG patterned wafer.

具体实施方式 detailed description

[0031]在下面的详细描述中,使用数字平版印刷术来形成印刷图案化掩膜。 [0031] In the following detailed description, the digital lithography to form a print-patterned mask. 数字平版印刷术是用于以期望的图案将材料直接沉积到基板上的工艺,其取代了在传统的晶圆制造中使用的精密且耗时的影印工艺。 Digital lithography is used to pattern the desired material is deposited on the substrate directly into the process, which is time-consuming and precision substituted photocopying process used in conventional wafer fabrication. 数字平版印刷术一般使用打印机头来从储液器可控地喷射单个液滴以在基板的多个区域之上形成图案化层。 Digital printers generally used lithography head ejecting a single droplet from the reservoir controllably to form a patterned layer over the plurality of regions of the substrate. 液滴通常是相变材料。 The phase change material typically drops. 数字平版印刷术的一个应用是以设计成用作掩膜的印刷图案的形式沉积材料(因此该掩膜在此称为“印刷图案化掩膜”)。 One application of digital lithography is designed in the form of a printed pattern of the deposition material used as a mask (referred to herein as a mask so that the "print-patterned mask"). 当然,将理解到,其他的印刷系统也可以用来形成掩膜,因为从下文的描述中将变得明显的是,与材料的沉积方法相比,形成掩膜的材料构成本公开的更为关键的方面。 Of course, it will be appreciated that other printing systems may be used to form a mask, as becomes apparent from the description hereinafter, as compared with the material deposition process, the mask material formed according to the present disclosure more key aspects.

[0032]在Wong等人的美国专利N0.6,972,261中描述了适于实施下文所阐述的方法的实施例的系统,该美国专利的公开通过参引的方式并入本文。 [0032] Example embodiments described system is adapted to the methods set forth in the Examples below Wong et al., U.S. Patent No. N0.6,972,261 in the manner disclosed by reference U.S. patents is incorporated herein. 更具体地,参照图1,在其中示出了系统10的相关部件,系统10包括热源12,热源12对一般含有相变材料的储液器14进行加热。 More specifically, referring to FIG. 1, which shows the correlation of the components of system 10, system 10 includes a heat source 12, source 12 pairs reservoir typically contains a phase change material 14 is heated. 相变材料因而被加热到足以将材料维持在液态的温度。 Thus the phase change material is heated to a temperature sufficient to maintain the liquid material. 储液器的温度通常维持在50摄氏度以上,并且在一些情形下,维持在100摄氏度以上,即维持在足以使在室温附近处于固相的很多有机材料液化的温度。 Temperature of the reservoir is generally maintained above 50 degrees Celsius, and in some cases, be maintained at above 100 degrees C, i.e., maintained at a temperature sufficient to liquefy many organic materials in the solid phase at around room temperature.

[0033]相变材料可以是在高于室温的温度熔融的有机材料。 [0033] The phase change material may be at a temperature above room temperature molten organic material. 相变材料的其他理想特性包括图案化材料是不与沉积在或者将要沉积在晶圆上及用在这种沉积中的有机材料和无机材料发生反应的,以及相变材料对蚀刻剂且特别是溶剂具有高选择性。 Other desirable characteristics of the phase change material comprises patterning the deposited material is not to be deposited in the reaction or used in such deposition of organic and inorganic materials and occur on the wafer, and a phase change material and in particular etchant solvent having a high selectivity. 在一个实施例中,相变材料溶解在碱性溶液中(即,是“碱可移去的”),尽管在其他实施例中,可采用溶剂和/或设备的其他特性来去除(如果需要)相变材料。 In one embodiment, the phase change material is dissolved in an alkaline solution (i.e., a "removable base"), although in other embodiments, other characteristics of the solvent employed and / or device to remove (if desired ) phase change material.

[0034I錯是具有前述特性的相变材料的示例。 [0034I wrong exemplary phase change material having the aforementioned characteristics. 来自康涅狄格州的Middlebury的Crompton公司的基于Kemami de (十八酰胺)180的錯是用作相变图案化材料的合适的錯的仅仅一个示例。 Error from Crompton Corporation of Middlebury, Conn based Kemami de (stearamide) 180 is only one example of a suitable fault phase change patterning material used.

[0035]回到图1,在该系统中,诸如液滴源16的一个或多个液滴源接收来自储液器14的液体相变材料并输出液滴18以便沉积在基板20上。 [0035] Returning to Figure 1, in the system, such as a source of one or more droplets of droplet source 16 receives the liquid from the reservoir 14 and outputs the phase-change material 18 to deposit the droplets on the substrate 20. 基板20可以维持在使得液滴在沉积后迅速冷却的温度。 The substrate 20 may be maintained such that the droplets rapidly cooled after deposition temperature.

[0036]当相邻液滴之间的增加的聚结被需要时,例如在形成尺寸大于单个液滴的尺寸(直径大约为30-40微米)的被掩盖区域时,可升高基板温度以增加液滴扩散并由此增加聚结。 When [0036] When increasing between adjacent droplets coalesce needed, for example in the form of a single droplet size larger than the size (diameter of about 30-40 microns) is masked region, the substrate temperature can be raised to increase and thereby increase the diffusion droplet coalescence. 当印刷来自声学喷墨打印机的基于Kemamide的錯的线时,已发现将基板温度从30摄氏度升高到40摄氏度改善了图案的印刷质量。 When printing on the wrong line from Kemamide acoustic ink jet printer, it has been found that the substrate temperature was raised from 30 degrees C to 40 degrees C improves the print quality of the pattern. 在基于Kemamide的錯的情况下,已发现当表面维持在40摄氏度(这是低于蜡的固相点的大约20摄氏度)时,达成了极好的结果。 In the case of Kemamide-based fault has been found that when the surface is maintained at 40 degrees C (which is below the solid phase point of the wax is about 20 degrees Celsius), to achieve excellent results. 在40摄氏度,基板的温度仍然足够低以致液滴在接触基板20时即迅速地固化。 At 40 ° C, the temperature of the substrate is still low enough that the droplet rapidly solidified i.e. upon contact with the substrate 20.

[0037]在相变材料的液滴沉积在基板20上后,基板20与液滴源16的相对位置被调节以便在要被图案化的第二位置之上改变液滴源16的位置。 After [0037] In the droplet phase change material is deposited on the substrate 20, the relative position of the substrate 20 and droplet source 16 are adjusted so as to change the position of the droplet source 16 in a second position to be patterned above. 该改变位置的操作可以通过移动液滴源16或者通过移动基板20来实现。 The position change operation can be achieved by moving the substrate 20 by moving droplet source 16 or. 如图1所示,控制电路22以预定图案在基板20之上移动液滴源16。 As shown in FIG 1, the control circuit 22 moves droplet source 16 in a predetermined pattern on the substrate 20. 驱动电路24向液滴源16提供能量,从而在液滴源16被定位在要被图案化的基板20的区域之上时导致液滴的喷射。 Driving circuit 24 provides energy to droplet source 16, so as to be positioned at the droplet source 16 results in ejection of droplets when the area to be patterned over the substrate 20. 通过使液滴源16的移动与液滴源输出的定时相协调,能够在基板20上“印刷”出图案。 By coordinating timing of droplet source outputs movement of droplet source 16, to "print" the pattern on the substrate 20.

[0038]当前描述的方法最终用来产生图案化的晶圆和其他结构。 [0038] The presently described method ultimately used to produce patterned wafers and other structures. 因此,希望在基板20的表面上的特定位置中形成被印刷的掩膜特征。 Thus, a specific desired position on the surface of the substrate 20 is formed of mask features to be printed. 形成印刷图案化掩膜的液滴18的沉积的位置对准常规是通过使用基准标记、数字成像和处理、以及处理器控制液滴源和基板的相对移动而在数字平版印刷术系统中实现的。 Forming print-patterned mask position alignment of the deposited droplet 18 by using the conventional reference mark, digital imaging and processing, and a processor controlling droplet source and the substrate relative movement implemented in digital lithography system . 在图案化之前以及图案化的同时通过图像处理将掩膜的形成在基板20之上对齐的能力是数字平版印刷工艺比起其他掩膜方法来的显著优点。 Prior to patterning and patterning simultaneously by the image processing capability of forming a mask 20 on the substrate aligned with a digital lithographic process over other masking methods to significant advantages.

[0039]为了控制和对齐液滴源16的移动,诸如标记26的印刷基准对齐标记可以被施加或形成在将要在其上施加相变材料的层的表面上。 [0039] In order to control and align the movement of droplet source 16, such as a printed reference mark alignment marks 26 may be applied to or formed on the surface to be applied on the phase change material layer thereof. 可替代地,基准标记可以在沉积工艺(未示出)期间位于载体保持基板20上。 Alternatively, the reference marks may be located on a carrier holding substrate 20 during the deposition process (not shown). 诸如摄像机28的图像处理系统可以用来协调液滴的定向及在其上将要施加液滴的表面的定向。 The image processing system such as a camera 28 may be used to coordinate and orientation in which the droplets to be applied on the surface of the droplets of the orientation. 处理系统然后通过在图案层的实际印刷之前改变图案图像文件来调节图案层的位置。 Processing system then adjusts the position of the pattern layer by altering the pattern image file before actual printing of the pattern layer. 定位调节在软件中实现并且被转化成液体源16的移动。 Positioning adjustment is implemented in software and is converted to a movement of the liquid source 16.

[0040]每个液滴源可以利用包括传统的喷墨技术的多种技术来实施。 [0040] Each droplet source may be implemented using a variety of technologies including traditional ink-jet technology. 非常适于产生极小的液滴尺寸的替代技术是使用声波来引起图案化材料的液体的喷射,如在例如Wong等人的美国专利N0.6,972,261中所描述的声学墨印刷系统中所进行的那样。 Ideal for generating extremely small droplet sizes is the use of alternative technologies sound waves to cause ejection of liquid patterning material, such as acoustic ink printing systems, for example, U.S. Patent No. N0.6,972,261 Wong et al., Described in as those carried out. 适于相变材料的液滴的喷射的这些系统的示例包括:喷墨系统(例如在美国专利4,131,899中公开的喷墨系统,该美国专利通过参引的方式并入本文);弹道气雾剂标记(BAM)装置(例如在美国专利6,116,718中公开的装置,该美国专利通过参引的方式并入本文);声学墨打印机(AIP)系统(美国专利4,959,674,该美国专利通过参引的方式并入本文);载体-墨喷射器(如在美国专利5,958,122中公开的,该美国专利通过参引的方式并入本文);偏转控制喷墨系统(例如在美国专利3,958,252中公开的,该美国专利通过参引的方式并入本文),等等。 Example adapted droplet phase change material injection these systems include: ink-jet system (e.g., in the ink jet system disclosed in U.S. Patent No. 4,131,899, which is incorporated U.S. Patent No. incorporated herein by way of reference); ballistic aerosol marking (BAM) devices (such as the device disclosed in U.S. Patent No. 6,116,718, which is incorporated U.S. Patent No. incorporated herein by way of reference); an acoustic ink printer (AIP) systems (U.S. Patent No. 4,959 , 674, which is incorporated by reference U.S. Patent manner herein); vector - ink ejectors (as disclosed in U.S. Patent No. 5,958,122 in the U.S. Patent is incorporated herein by reference in a manner); deflection control ink-jet system (e.g., disclosed in U.S. Patent No. 3,958,252 in the U.S. Patent is incorporated herein by reference in a manner), and the like. 这种系统还包括图案转印系统,例如静电印刷系统、离子谱系统、丝网系统、接触系统以及凹版印刷系统等。 The system further includes a pattern transfer systems, such as an electrostatic printing system, ion spectrum system, a screen system, the contact system, and gravure printing systems.

[0041]接下来描述的是印刷图案化掩膜的形成、以及形成有所述掩膜的图案化晶圆的生产的具体步骤。 [0041] Next described is the print-patterned mask is formed, and forming a specific step of patterning the wafer produced mask. 图2至图5图示了在根据图6所示的工艺的装置的生产的若干中间阶段处的该装置的第一实施例。 Figures 2 to 5 illustrate a first embodiment of the apparatus at a plurality of intermediate stages in the production process of the device according to FIG. 6 is shown in. 尽管下面的描述具体参照的是图2至图5所示的装置,而无需对图2至图5所示的装置进行更具体的参照,下面的描述遵循的是图6所示的顺序。 Although the following description is specific with reference to the apparatus shown in FIG. 2 to FIG. 5, without the need for the device shown in FIG. 2 to 5 in more detail with reference to the following description follows the order shown in FIG. 6.

[0042]参照图2,图示了在基板上形成掩膜以用于图案化晶圆的生产的工艺。 [0042] Referring to Figure 2, illustrates a process of forming a mask on the substrate for the production of patterned wafers. 从液滴源16喷射的液滴18冲击基板30的表面以形成掩膜特征32。 Droplet source 16 drops 18 ejected from the impact surface of the substrate 30 to form the mask features 32. 尽管本描述假定液滴18直接沉积到基板30的表面上,但将理解的是,在本描述的范围内,液滴18也可以沉积到形成于基板30的表面上或之上的中间层(未示出)上。 While this description assumes that the droplets 18 deposited directly onto the surface of substrate 30, but it will be understood that, within the scope of the present description, the droplets 18 may be deposited onto the substrate 30 formed on the surface or on the intermediate layer ( not shown). 尽管掩膜特征32的尺寸可以根据从液滴源16喷射的材料的体积、包括液滴18的材料、基板30的表面属性(影响液滴的润湿)、基板30的温度等而变化,但掩膜特征32—般将具有30至50微米的直径。 Although the size of mask features 32 may be in accordance with the volume of the droplets ejected from the source 16 of material, including material droplets 18, the surface property (the droplet wetting), the temperature of the substrate 30, etc., of the substrate 30, but 32- mask features like having a diameter of 30 to 50 microns. 可以通过如前所述的那样聚结相邻的液滴而获得较宽的掩膜特征。 May be obtained by wider mask features such as coalescence of adjacent liquid droplets as previously described. 掩膜特征32连同多个类似的这种特征(未示出)一起形成印刷图案化掩膜。 Mask features print-patterned mask 32 is formed along with a plurality of similar such feature (not shown). 基板30连同印刷图案化掩膜(和任何一个或多个中间层)一起形成结构34。 Substrate 30 together with the print-patterned mask (and any one or more intermediate layers) 34 together form a structure.

[0043]目标材料接下来被沉积在结构34之上。 [0043] Next, the target material 34 is deposited over the structure. 由特征32形成的印刷图案化掩膜连同多个类似的这种特征一起代表基板30上将没有这种沉积材料的区域。 Print-patterned mask formed by the feature 32 together with a plurality of such similar features on a substrate 30 together represent no area such deposition material. 在图3中示出了目标材料的沉积。 In FIG 3 shows a deposition target material. 目标材料可以是广泛地多种材料、元素或合金中的一种。 Target material may be a wide variety of materials, one or more elements of the alloy. 目标材料36的颗粒的一个具体的示例是铝(Al)。 A specific example of the target material particles 36 are aluminum (Al). 尽管实际的目标材料可以变化,但其沉积方法和性质构成本公开的重要方面。 Although the actual target material may vary, but the nature of the deposition process and form an important aspect of the present disclosure.

[0044]根据本公开的第一实施例,通过电弧喷涂工艺来沉积目标材料。 [0044] According to a first embodiment of the present disclosure, by an arc spray process to deposit the target material. 在图4中示出了用于电弧喷涂的设备40。 In FIG. 4 shows a device 40 for arc spraying. 在电弧喷涂工艺中,借助于电弧在44处熔化一对电性导线42a、42b。 The arc spray process, electric arc melting by means of a pair of wires 42a, 42b at 44. 熔化的材料被压缩空气雾化并且朝向基板30的表面推进。 Compressed air atomized molten material toward the substrate 30 and the surface of the propulsion. 具有能量的熔化颗粒冲击基板并在基板上固化以形成涂层。 Melting particles having an energy of impact on the substrate and curing the substrate to form a coating.

[0045]回到图3,目标层材料的雾化颗粒36被导向结构34。 [0045] Returning to Figure 3, the target layer material is atomized particles 36 are guide structure 34. 两个不同的结果被同时获得。 Two different results are obtained simultaneously. 首先,在基板30的表面被暴露的区域中(S卩,除了设有掩膜特征32的位置外),雾化的颗粒聚集形成目标材料层38。 First, the surface of the substrate 30 is exposed in a region (S Jie, is provided in addition to the position of the mask features 32), atomized particles are aggregated object material layer 38 is formed. 其次,通过电弧喷涂工艺使颗粒36具有充分能量,以在掩膜特征32的区域中,颗粒实际上进入形成掩膜特征32的材料的本体。 Secondly, by arc spraying process the particles 36 having sufficient energy to the area of ​​the mask features 32, the particles actually formed into the bulk material 32 of mask features. 如果这种颗粒的大部分是能量充足地,则非常少的该颗粒(如果有的话)聚集在掩膜特征32的表面上,而不是变为嵌入在其中。 If most of the energy of such particles sufficiently, then very little of the particles (if any) collected on the surface of the mask features 32 and not become embedded therein. 这样,层38在掩膜特征32的区域中实际上是不连续的。 Thus, the mask layer 38 in the region of the feature 32 is actually discontinuous.

[0046]将理解的是,尽管可能的是目标材料颗粒的一小部分不落在掩膜特征32的表面上,这种颗粒的数量将相对非常小,并且在掩膜特征32之上的这种颗粒的层的厚度将相对非常薄。 [0046] It will be understood that, although it is possible that a small portion of the target material particles 32 does not fall on the surface of mask features, the number of such particles will be relatively very small, and this is over the mask features 32 thickness of the layer of the seed particles is relatively thin. 这种薄层容易与相对厚得多的目标材料层38分离(通常是自愿地,例如通过冷致收缩),从而有效地使层38不连续。 Such a layer easily separated from the object material layer 38 is relatively much thicker (usually voluntarily, for example by cold-shrinkable), so that the layer 38 does not effectively continuous.

[0047]目标材料颗粒36进入掩膜特征32的本体所需的能量可以是一种或多种形式。 [0047] The target material particles 36 into the body of energy required to mask features 32 may be one or more forms. 颗粒36可以例如具有足够的动能以进入特征32。 Particles 36 may for example have sufficient kinetic energy to enter the 32 features. 例如,用于电弧喷涂工艺的推进物在特征32的方向以颗粒的动量形式传递动能。 For example, for propellant arc spray process to transfer kinetic momentum direction in the form of particles of 32 features. 在具有充分的动量(以及形成特征32的材料的可渗透性)的情况下,颗粒36可以将自身嵌入在特征32中。 In the case of having sufficient momentum (and forming characteristics of the material 32 is permeable), the particles 36 may be embedded in the feature 32 itself.

[0048]颗粒36也可以具有足够的热能以进入特征32。 [0048] The particles 36 may also have sufficient energy to enter the 32 features. 例如,在使导线材料雾化的过程中,电弧对所述材料进行加热。 For example, when the wiring material of the atomization process, the material is heated arc. 尽管颗粒可能把该热能中的一部分传给环境,但颗粒可以保持足够的热能以导致形成特征32的材料的局部软化或者甚至熔化,使得颗粒变为嵌入在特征32中。 Although the particles may be a portion of the thermal energy transmitted to the environment, but the particles can maintain a sufficient thermal energy to cause localized softening of the material forming feature 32 or even melt, such that the particles become embedded in the feature 32.

[0049]当然,颗粒36可以具有足以导致其进入特征32中的动能与热能的组合。 [0049] Of course, the particles 36 may have a composition sufficient to cause thermal energy and kinetic energy thereof into the features 32. 例如,电弧喷涂工艺一般在颗粒从导线雾化时向颗粒提供动量和热量两者。 For example, electric arc spray process typically provide both the particle momentum and heat to the atomized particles from the wire. 因此,在本实施例中,是动能与热能的组合导致将颗粒36引入到特征32的本体中。 Accordingly, in the present embodiment, it is a combination of kinetic and thermal energy to cause the particles 36 into the body 32 features.

[0050]颗粒36进入特征32所需的能量部分地是特征32的硬度的函数,而特征32的硬度则是特征32的温度的函数。 [0050] 32 wherein the particles 36 into the energy required is in part a function of the hardness of the feature 32, wherein the hardness is a function of temperature 32 features 32. 对于热喷涂沉积,由于要被沉积的材料熔化,所以提供与基板的充分粘附的条件将足以向蜡掩膜提供足够的热能。 For thermal spray deposition, since the molten material to be deposited, the conditions provide sufficient adhesion to the substrate will be sufficient to provide sufficient thermal energy to a wax mask. 热喷涂材料需要在沉积到表面上时是熔化的。 Thermal spray material need to be deposited onto the surface of the melt. 该熔化状态温度将根据材料而变化。 The melting temperature will vary depending on the state of the material. 在颗粒36包括铜的情况下,颗粒36的温度应当至少为1085摄氏度从而处于其熔化状态。 In the case of particles 36 comprises copper, the temperature of the particles 36 should be at least 1085 degrees Celsius so that in its molten state. 在该温度,铜的颗粒36将容易进入特征32。 At this temperature, the copper particles 36 into the feature 32 will readily.

[0051]尽管前面关注于向颗粒36赋予能量,但通过影响特征32的属性来降低这些颗粒所需的能量也是可能的。 [0051] While the foregoing is concerned with imparting energy to particles 36, but to reduce the energy of the desired particle properties by influencing features 32 are possible. 例如,在本公开的一个实施例中,特征32被加热使得其被软化并减少颗粒32变为嵌入在其中所需的能量。 For example, a disclosure in the present embodiment, wherein 32 is heated to be softened and reduced such that it becomes embedded therein 32 particles of the desired energy. 这种热可以通过对基板30进行加热、通过升高环境温度等来提供。 Such heat can be by heating the substrate 30, it is provided by the ambient temperature and the like. 蜡掩膜能够被加热到其熔化温度以下但是足以使特征软化的温度,例如在60摄氏度至70摄氏度的范围内。 Wax mask can be heated to below its melting temperature but a temperature sufficient to soften the features, for example in the range 60 degrees to 70 degrees Celsius. 如果使用较高熔点的蜡,则使特征材料变得足够软的温度可能较高。 If a higher melting wax, it is characterized in that the material becomes soft enough temperature may be higher.

[0052]对于PVD沉积,一般将需要被加热的基板。 [0052] For the PVD deposition, the substrate will generally need to be heated. 然而,在某些实施例中,对环境加热使得特征达到60摄氏度至70摄氏度的范围(或其他适当范围,这取决于所使用的材料)是可能的。 However, in some embodiments, characterized in that the heating of the environment to achieve a range of 60 degrees Celsius to 70 degrees Celsius (or other suitable range, depending on the material used) is possible. 更进一步地,与基板30相比,选择性地加热特征32是可能的。 Still further, compared with the substrate 30, wherein selectively heating 32 is possible. 例如,红外(IR)接收颗粒可以用于特征32的一部分。 For example, infrared (IR) receiving a portion of the particles can be used wherein 32. 然后可以使IR源投射在特征32和基板30上,由此优先加热特征32。 IR source may then be projected onto the substrate 32 and the features 30, 32 whereby the preferential heating characteristics. 可以使用其他优先加热技术,例如具有诸如激光的精密源的扫描特征32。 Other techniques may be used to preferentially heat, for example, a scanning laser characteristics, such as a precision source 32.

[0053]另外,形成掩膜特征32的材料可以选择为使其相对软些或可渗透,以便使颗粒36的所需能量最小化。 [0053] Further, a mask material 32 may be selected characterized in that it is relatively softer or permeable, so that the energy required for the particles 36 is minimized. 掩膜材料的很多不同配方(例如,蜡)是已知的,如同这些材料的物理属性是已知的一样。 Many different formulations of the mask material (e.g., wax) is known as the physical properties of these materials are known as. 因此,在知道这些属性以及颗粒36的沉积条件的情况下,可以建立起使得颗粒36如前所述地进入特征32的条件。 Thus, in the case of known deposition conditions and the properties of these particles 36, 36 as described above can be established such that the particles 32 into the characteristic conditions.

[0054]上述工艺和操作条件的一个效果在于,在某些实施例中,与被目标材料层覆盖不同,特征32的顶面(S卩,掩膜的顶部)是暴露的。 [0054] One effect of the above-described process and operating conditions that, in some embodiments, the target material layer is covered with a different top face (S Jie, the top mask) feature 32 is exposed. 因此,不需要在目标材料沉积后为了去除掩膜而对该掩膜的沉切一一可以通过简单得多、成本更低、且侵入性更小的由上而下的蚀刻来去除掩膜(以及嵌入的目标材料)。 Accordingly, it is unnecessary to remove the target material is deposited a mask eleven mask may be removed by a much simpler, lower cost, and less invasive for the top-down etching mask under cut ( and embedding target material).

[0055]上述电弧喷涂工艺可以操作为“7令”工艺,这意味着雾化颗粒到它们到达基板时为止以已经由于被雾化而丢失了大部分的热能。 [0055] The arc spray process can be operated as "Order 7" process, which means that when they reach the atomized particles to the substrate until the atomized has been lost since most of the thermal energy. 在这种情况下,特征32的加热和/或为特征32选择相对软的材料将有助于将颗粒32引入其中。 In this case, the feature 32 of the heating and / or feature 32 selected to be relatively soft material will help to particles 32 incorporated therein.

[0056]尽管前面着重于电弧喷涂工艺,但将意识到的是,很多其他沉积技术可以与本公开兼容。 [0056] While the foregoing focuses on the arc spray process, it will be appreciated that many other deposition techniques can be compatible with the present disclosure. 物理气相沉积(PVD)、激光及电弧辅助PVD、溅射、以及分子束外延(MBE)是可以提供充分的动能或热能、或该两者从而导致目标材料原子进入掩膜特征32的本体(与在掩膜特征32上形成层不同)的物理工艺的示例。 Physical vapor deposition (PVD), arc and laser assisted PVD, sputtering, and molecular beam epitaxy (MBE) can provide sufficient kinetic or thermal energy, or both resulting in target material atoms into the body 32 of the mask features (and examples of physical processes are formed of layers of different features on the mask 32). 化学气相沉积(CVD)和等离子增强CVD(PECVD)是可以提供充分的化学能以使目标材料原子进入掩膜特征32的本体(与在掩膜特征32上形成层不同)的化学工艺的示例。 Chemical vapor deposition (CVD) and plasma enhanced CVD (PECVD) can provide sufficient chemical energy to the target material atoms into the body 32 of the mask features (formed on the mask layer 32 a different characteristic) is an example of a chemical process.

[0057]接下来参照图5,本公开的方法从去除掩膜特征32和嵌入在其中的目标材料的步骤开始。 [0057] Referring next to FIG 5, the method of the present disclosure wherein the mask is removed at step 32 and embedded therein the target material is started. 用于该去除步骤的工艺和材料大部分取决于为掩膜特征32选择的材料。 Most of the processes and materials used in a material removal step depends 32 selects the mask features. 在一些实施例中,所使用的工艺和材料还取决于在其沉积期间结合到掩膜特征32中的目标材料。 In some embodiments, the processes and materials used during its deposition also depends on the target material bonded to the mask features 32. 根据一个实施例,特征32包括上述Kemamide錯。 According to one embodiment, including the above features 32 Kemamide wrong. 诸如四氢呋喃或本领域已知的其他溶剂的溶剂被施加于该结构,或者可替代地,该结构被浸入到这种溶剂的槽中以去除掩膜结构,其中,该溶剂也可以被加热。 It is known in the art such as tetrahydrofuran or other solvent solvent is applied to the structure, or alternatively, the structure is immersed in a solvent bath to remove the mask of this structure, wherein, the solvent may also be heated. 重要地,随着掩膜结构的去除,嵌入在其中的目标材料被去除。 Importantly, with the removal of the mask structure, which is embedded in the target material is removed. 溶剂和去除条件应当使得在掩膜结构去除之后留下的沉积目标材料不会因此而受到损坏。 The solvent is removed and certain conditions should be such that the deposition material after the removal of the remaining structure of the mask will not be damaged. 由于目标材料层38在掩膜特征32的区域处是不连续的,所以在该工艺中掩膜特征32的去除不会损坏层38。 Since the object material layer 38 at a region 32 of mask features it is not continuous, so that removal of mask features 32 in the process 38 without damaging the layer.

[0058]在图6中示出了用于根据本公开的图案化晶圆的形成的完整工艺60。 [0058] FIG. 6 shows a process 60 for forming a complete patterned wafers of the present disclosure. 根据工艺60,在步骤62对基板的任何必要的清洁和制备之后,在步骤64印刷图案化掩膜沉积。 The process according to 60, after any necessary cleaning and preparing the substrate of step 62, step 64 in the print-patterned mask deposition. 此时,在步骤66,应在基板上形成图案化层的目标材料的颗粒被引入到基板的附近中。 In this case the target material particles, at step 66, to be formed in patterned layer on a substrate is introduced into the vicinity of the substrate. 这些颗粒可以以期望的能量被引入以使其能够被嵌入到形成印刷图案化掩膜的材料中,或者,在可选的步骤68,这些颗粒可以根据需要被给予能量。 These particles may be introduced to the desired energy so that it can be embedded into the material forming the print-patterned mask, or, in an alternative step 68, the energy of these particles may be administered as needed. 另外,在可选的步骤70,基板可以被处理(例如,被加热)以降低颗粒的所需能量。 Further, in an optional step 70, the substrate may be processed (e.g., heated) in order to reduce the energy required for the particles. 在步骤72,使颗粒聚集在基板上并且嵌入在印刷图案化掩膜内。 In step 72, the particles collected on the substrate and embedded in the print-patterned mask. 最后,在步骤74,剥离印刷图案化掩膜,将嵌入在其中的目标材料颗粒与掩膜一起取走,留下聚集的目标材料作为基板上的图案化层。 Finally, at step 74, the release print-patterned mask, the target material particles embedded therein is removed together with the mask, leaving the target material as aggregate patterned layer on the substrate.

[0059]现代的电气设备的物理学及其生产方法并不是绝对的,而是产生期望的设备和/或结果的统计上的努力。 [0059] Production methods of modern physics and electrical equipment is not absolute, efforts statistical and / or results but to produce the desired device. 即使对工艺的可重复性、制造设施的清洁度、起始材料和处理材料的纯度等给予了最大的关注,也会产生差异和瑕疵。 Even repeatability of the process, the cleanliness of the manufacturing facility, starting material purity and the treated material given the greatest attention, also have differences and flaws. 因此,本公开或其权利要求的描述中的限制不能够也不应当被认作是绝对的。 Accordingly, the description of the present disclosure or its claims can not and should not be limited to be regarded as absolute. 权利要求的限制意在将本公开的界限限定到这些限制并包括这些限制。 Limitations in the claims are intended to define the limits of the present disclosure include those limits and these limits. 为了进一步突出这一点,术语“基本”可以在本文中与权利要求的限制相关地偶尔使用(尽管对差异和瑕疵的考虑不仅限于与该术语使用的限制)。 To further highlight this, the term "substantially" may be used herein to limit the claims in relation to use occasionally (while taking into account differences and imperfections is not limited to limit the use of that term). 尽管难以像本公开自身的限制一样准确地限定,但我们意在使该术语被解释为“在较大的程度上”、“尽可能可实行地”、“在技术限制内”等。 Although it is difficult to accurately define the image itself as limiting the present disclosure, we intended that the term be interpreted as "a large extent", "as much as possible can be implemented", "within technical limitations" and the like.

[0060]尽管在前面的详细描述中已经提出的多个优选的示例性实施例,但应当理解,存在大量的变型,并且这些优选实施例仅仅是代表性示例,并不意在以任何方式限制本公开的范围、适用性或构型。 [0060] Although various preferred in the foregoing detailed description has been proposed in an exemplary embodiment, it should be understood that there are a lot of variations, and these preferred embodiments are merely representative examples and do not in any way intended to limit the present disclosed scope, applicability, or configuration. 例如,前面的描述着重于将图案化层直接形成在基板的表面上。 For example, the foregoing description focuses on the patterned layer is formed directly on the surface of the substrate. 然而,根据本公开的工艺可以在基板之上形成的任何一个或多个层上进行。 Performed on any one or more layers, however, the process according to the present disclosure may be formed over the substrate. 另外,根据本公开,材料的一个或多个层可以沉积在图案化的层的之上。 Further, according to the present disclosure, one or more layers of material may be deposited over the patterned layer. 实际上,这些后续的层可以自己通过本公开的工艺而被图案化。 In fact, these subsequent layers themselves may be patterned by the process of the present disclosure. 因此,前面的详细描述通过示例的方式向本领域普通技术人员提供了实施本公开的方便的引导,并且能够想到,在不偏离由所附权利要求限定的本公开的精神和范围的情况下,对所描述的实施例的功能和布置的多种变化可以被进行。 Accordingly, the foregoing detailed description is provided by way of example to those of ordinary skill in the art to facilitate the guide of the present embodiment of the disclosure, and can be thought of, without departing from the spirit and scope of the disclosure as defined by the appended claims, changes in the function and arrangement of the various embodiments described may be performed.

Claims (16)

  1. 1.一种在基板之上产生图案化的目标材料层的方法,包括以下步骤: 在所述基板之上形成印刷图案化掩膜结构,使得所述掩膜结构的第一表面朝向所述基板定向并且所述掩膜结构的第二表面背离所述基板定向; 在60°C至70°C的范围内加热所述印刷图案化掩膜结构,使得所述印刷图案化掩膜结构被软化但不熔化;在加热之后, 利用充分的能量将所述目标材料的颗粒导向所述基板和所述掩膜结构,使得: 所述目标材料的所述颗粒在所述第二表面处进入所述掩膜结构; 所述目标材料的所述颗粒基本上不聚集在所述第二表面上; 所述目标材料的所述颗粒作为目标材料层聚集在所述基板之上而不是聚集在所述掩膜结构之上; 所述加热有助于所述目标材料的所述颗粒进入到所述印刷图案化掩膜结构中;以及连同所述掩膜结构中的目标材料的所述颗粒一起去除所述 A method of producing a target material layer is patterned on a substrate, comprising the steps of: forming a print-patterned mask structure over the substrate, such that the first surface of the mask toward the substrate structure is oriented away from the mask and the second surface structure orienting the substrate; and heating said print-patterned mask structure over a 60 ° C to 70 ° C, so that the print-patterned mask structure is softened but It does not melt; after heating, the use of sufficient energy to the particles are directed at the substrate and the mask structure of the target material, such that: the particles of the target material into said cover in said second surface membrane structure; the particles of the target material is not substantially accumulated on the second surface; the particles of the target material is gathered as the target material layer on the substrate rather than accumulated in the mask over the structure; the target material contributes to the heating of said particles into said print-patterned mask structure; and removing said particles together with the target material in the mask structure 掩膜结构,使得所述基板之上而不是所述掩膜结构之上的所述目标材料层作为图案化层而保留。 Mask structure, such that the target material layer on the substrate and not on the mask layer patterning structure as reserved.
  2. 2.根据权利要求1所述的方法,去除的步骤还包括在不需要沉切的情况下,连同所述印刷图案化掩膜结构中的所述目标材料的所述颗粒一起去除所述印刷图案化掩膜结构,从而留下基本统一的所述目标材料层作为所述基板之上的图案化层的步骤。 2. The method according to claim 1, further comprising a step of removing the sink without the need for cutting case, the particles of the target material along with the print-patterned mask structure, said print pattern is removed together with mask structure, leaving a substantially uniform layer of the target material as a step of patterning layer over the substrate.
  3. 3.根据权利要求2所述的方法,其中连同所述印刷图案化掩膜结构中的所述目标材料的所述颗粒一起去除所述印刷图案化掩膜结构的步骤包括向所述印刷图案化掩膜结构的所述第二表面施加溶剂,所述溶剂使所述印刷图案化掩膜结构溶解但不影响聚集在所述基板之上的所述目标材料层。 3. The method according to claim 2, wherein the particles of the target material in conjunction with the print-patterned mask structure in the step of the print-patterned mask structure comprises removing said print-patterned together to the second surface of the mask structure is applied to a solvent so that the print-patterned mask structure does not affect the dissolution of the target material layer of aggregate over the substrate.
  4. 4.根据权利要求2所述的方法,其中连同所述印刷图案化掩膜结构中的所述目标材料的所述颗粒一起去除所述印刷图案化掩膜结构的步骤包括向所述印刷图案化掩膜结构的所述第二表面施加蚀刻剂,所述蚀刻剂对所述印刷图案化掩膜结构进行蚀刻但不影响聚集在所述基板之上的所述目标材料层。 4. The method according to claim 2, wherein the particles of the target material in conjunction with the print-patterned mask structure in the step of the print-patterned mask structure comprises removing said print-patterned together to the second surface of the mask structure is applied to the etchant, the etchant of the print-patterned mask structure is etched without affecting the accumulation of the target material layer on the substrate.
  5. 5.根据权利要求1所述的方法,其中所述颗粒被提供充分的动能以便使所述颗粒进入所述掩膜结构。 5. The method according to claim 1, wherein the particles provide sufficient kinetic energy to the particles entering the mask structure.
  6. 6.根据权利要求5所述的方法,其中,利用充分的能量将所述目标材料的颗粒导向所述基板和所述掩膜结构还包括以下步骤: 将所述目标材料的颗粒引入到所述基板和所述掩膜结构附近。 6. The method according to claim 5, wherein, using sufficient energy to the particles are directed at the substrate and the mask structure of the target material further comprises the step of: introducing the particulate material to the target vicinity of the substrate and the mask structure.
  7. 7.根据权利要求1所述的方法,其中所述颗粒被提供充分的热能以便使所述颗粒进入所述掩膜结构。 7. The method according to claim 1, wherein said particles so as to provide sufficient thermal energy of the particles into the mask structure.
  8. 8.根据权利要求7所述的方法,其中,利用充分的能量将所述目标材料的颗粒导向所述基板和所述掩膜结构还包括以下步骤: 将所述目标材料的颗粒引入到所述基板和所述掩膜结构附近。 8. The method according to claim 7, wherein, using sufficient energy to the target material particles are directed at the substrate and the mask structure further comprises the steps of: introducing the particulate material to the target vicinity of the substrate and the mask structure.
  9. 9.根据权利要求1所述的方法,其中所述颗粒被提供充分的动能和热能以便使所述颗粒进入所述掩膜结构。 9. The method according to claim 1, wherein said particles are provided in sufficient kinetic and thermal energy to the particles entering the mask structure.
  10. 10.根据权利要求9所述的方法,其中,利用充分的能量将所述目标材料的颗粒导向所述基板和所述掩膜结构还包括以下步骤: 将所述目标材料的颗粒引入到所述基板和所述掩膜结构附近。 10. The method according to claim 9, wherein, using sufficient energy to the target material particles are directed at the substrate and the mask structure further comprises the steps of: introducing the particulate material to the target vicinity of the substrate and the mask structure.
  11. 11.根据权利要求1所述的方法,其中与所述基板的没有被所述印刷图案化掩膜结构覆盖的区域相比,所述印刷图案化掩膜结构被选择性地加热。 11. The method according to claim 1, as compared to the region not covered with patterned mask structure wherein the printing of the substrate, the print-patterned mask structure is selectively heated.
  12. 12.根据权利要求1所述的方法,其中所述颗粒通过电弧喷涂方法被导向所述基板和所述掩膜结构,所述颗粒包括铜,并且使得所述铜颗粒在至少1085°C的温度投射在所述掩膜结构的所述第二表面上。 12. The method according to claim 1, wherein said particles are directed to the substrate and the mask structure by an arc spraying method, the particles comprise copper, copper particles and causes the temperature of at least 1085 ° C in projected onto the second surface of the mask structure.
  13. 13.—种在基板之上产生图案化的目标材料层的方法,包括以下步骤: 在所述基板之上形成印刷图案化掩膜结构,使得所述掩膜结构的第一表面朝向所述基板定向并且所述掩膜结构的第二表面背离所述基板定向; 将所述印刷图案化掩膜结构加热到在60°C至70°C的范围内的温度,使得所述印刷图案化掩膜结构被软化但不熔化;在加热之后, 将目标材料的颗粒导向所述基板和所述掩膜结构,所述目标材料的所述颗粒被提供充分的动能和热能,并且所述掩膜结构是可充分渗透的,使得投射在所述掩膜结构上的所述目标材料的所述颗粒进入所述掩膜结构的所述第二表面并且基本上不聚集在所述掩膜结构的所述第二表面上,并且所述目标材料的所述颗粒作为目标材料层另外聚集在所述基板之上而不是聚集在所述掩膜结构之上;以及在不需要沉切的情况下,通过溶 13.- method of generating object material layer is patterned on a substrate, comprising the steps of: forming a print-patterned mask structure over the substrate, such that the first surface of the mask toward the substrate structure the second surface is oriented away from the mask and the substrate structure orientation; the print-patterned mask structure is heated to a temperature in a 60 ° C to 70 ° C is such that the print-patterned mask structure is softened but not melted; after heating, the particles are directed at the target material, the substrate and the mask structure, the particles of the target material is supplied sufficient kinetic energy and thermal energy, and the mask structure is sufficiently permeable, such that the particles are projected on the target material in the mask structure into the second structure and the surface of the mask is not substantially accumulated in said second of the mask structure on the titanium surface, and wherein the particulate material as the target object material layer over the substrate otherwise accumulate rather than collect on the mask structure; and in the case of the under cut does not require, by dissolving 所述印刷图案化掩膜结构来连同所述印刷图案化掩膜结构中的所述目标材料的所述颗粒一起去除所述印刷图案化掩膜结构,使得已经聚集在所述基板之上而不是所述掩膜结构之上的所述目标材料层不另外受影响。 The print-patterned mask structure for removing said print-patterned mask structure together with the particles of the target material, the print-patterned mask structure, such that have gathered on the substrate instead of the target material layer above the mask structure is not otherwise affected.
  14. 14.根据权利要求13所述的方法,其中所述颗粒通过电弧喷涂方法被导向所述基板和所述掩膜结构,所述颗粒包括铜,并且使得所述铜颗粒在至少1085°C的温度投射在所述掩膜结构的所述第二表面上。 14. The method according to claim 13, wherein said particles are directed to the substrate and the mask structure by an arc spraying method, the particles comprise copper, copper particles and causes the temperature of at least 1085 ° C in projected onto the second surface of the mask structure.
  15. 15.—种在基板之上产生图案化的目标材料层的方法,包括以下步骤: 在所述基板之上形成印刷图案化掩膜结构,使得所述掩膜结构的第一表面朝向所述基板定向并且所述掩膜结构的第二表面背离所述基板定向; 将所述印刷图案化掩膜结构加热到60°C至70°C的范围内的温度,使得所述图案化掩膜结构软化但不熔化;在加热以后, 将目标材料的颗粒导向所述基板和所述掩膜结构,所述颗粒被提供充分的动能和热能,并且所述掩膜结构是可充分渗透的,使得投射在所述掩膜结构上的所述目标材料的所述颗粒进入所述掩膜结构的所述第二表面并且基本上不聚集在所述掩膜结构的所述第二表面上,并且所述目标材料的所述颗粒另外作为目标材料层聚集在所述基板之上而不是聚集在所述掩膜结构之上,从而在所述基板之上形成目标材料的多个不连续区域,目标材 15.- method of generating object material layer is patterned on a substrate, comprising the steps of: forming a print-patterned mask structure over the substrate, such that the first surface of the mask toward the substrate structure the second surface is oriented away from the mask and the substrate structure orientation; the print-patterned mask structure is heated to a temperature within a 60 ° C to 70 ° C is such that the patterned mask to soften the structure but not melted; after heating, the particles are directed at the target material, the substrate and the mask structure, said particles providing sufficient kinetic and thermal energy, and the mask structure is sufficiently permeable so that the projection the particles of the target material on the mask structure into the second surface of the mask structure and substantially non-aggregated on the second surface of the mask structure, and the target Further aggregation of the particulate material as the target material layer on the substrate, rather than collect on the mask structure, thereby forming a plurality of discontinuous regions of target material on the substrate, the target material 的所述不连续区域被所述掩膜结构分离;以及在不需要沉切的情况下,通过溶解所述印刷图案化掩膜结构来连同所述印刷图案化掩膜结构中的所述目标材料的所述颗粒一起去除所述印刷图案化掩膜结构,使得已经聚集在所述基板之上而不是所述掩膜结构之上的所述目标材料层不另外受影响。 The discontinuous regions separated by the mask structure; and in the case of the under cut does not require, together with the target material to the print-patterned mask structure by dissolving the print-patterned mask structure removing said particles together with said print-patterned mask structure, such that the substrate has been gathered on the target material instead of the above mask layer structure is not otherwise affected.
  16. 16.根据权利要求15所述的方法,其中所述颗粒通过电弧喷涂方法被导向所述基板和所述掩膜结构,所述颗粒包括铜,并且使得所述铜颗粒在至少1085°C的温度投射在所述掩膜结构的所述第二表面上。 16. The method according to claim 15, wherein said particles are directed to the substrate and the mask structure by an arc spraying method, the particles comprise copper, copper particles and causes the temperature of at least 1085 ° C in projected onto the second surface of the mask structure.
CN 201310079615 2007-12-13 2013-03-13 The method of using a phase change material to produce a patterned layer of target material on a substrate CN103303010B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/419351 2012-03-13
US13419351 US8765226B2 (en) 2007-12-13 2012-03-13 Method for patterning using phase-change material

Publications (2)

Publication Number Publication Date
CN103303010A true CN103303010A (en) 2013-09-18
CN103303010B true CN103303010B (en) 2016-06-15

Family

ID=49128914

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201310079615 CN103303010B (en) 2007-12-13 2013-03-13 The method of using a phase change material to produce a patterned layer of target material on a substrate

Country Status (1)

Country Link
CN (1) CN103303010B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107139587A (en) * 2017-04-27 2017-09-08 昆山国显光电有限公司 Marking equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4412377A (en) * 1981-01-23 1983-11-01 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a hybrid integrated circuit device
US6742884B2 (en) * 2001-04-19 2004-06-01 Xerox Corporation Apparatus for printing etch masks using phase-change materials
US6872320B2 (en) * 2001-04-19 2005-03-29 Xerox Corporation Method for printing etch masks using phase-change materials
US6972261B2 (en) * 2002-06-27 2005-12-06 Xerox Corporation Method for fabricating fine features by jet-printing and surface treatment

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7261920B2 (en) * 2002-04-24 2007-08-28 Sipix Imaging, Inc. Process for forming a patterned thin film structure on a substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4412377A (en) * 1981-01-23 1983-11-01 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a hybrid integrated circuit device
US6742884B2 (en) * 2001-04-19 2004-06-01 Xerox Corporation Apparatus for printing etch masks using phase-change materials
US6872320B2 (en) * 2001-04-19 2005-03-29 Xerox Corporation Method for printing etch masks using phase-change materials
US6972261B2 (en) * 2002-06-27 2005-12-06 Xerox Corporation Method for fabricating fine features by jet-printing and surface treatment

Also Published As

Publication number Publication date Type
CN103303010A (en) 2013-09-18 application

Similar Documents

Publication Publication Date Title
US6533399B2 (en) Bubble-jet type ink-jet printhead and manufacturing method thereof
US6328417B1 (en) Ink jet printhead nozzle array
US6502306B2 (en) Method of fabricating a micro-electromechanical systems device
US6076723A (en) Metal jet deposition system
US5804083A (en) Method of forming a microstructure
US6742884B2 (en) Apparatus for printing etch masks using phase-change materials
US6428133B1 (en) Ink jet printhead having a moving nozzle with an externally arranged actuator
US20090225131A1 (en) Fluid Ejector Structure and Fabrication Method
US20080041818A1 (en) Method for pattern formation
WO2001089839A1 (en) Ink jet printhead having a moving nozzle with an externally arranged actuator
US6972261B2 (en) Method for fabricating fine features by jet-printing and surface treatment
US6513913B2 (en) Heating element of a printhead having conductive layer between resistive layers
US7169649B2 (en) Wafer scale integration of electroplated 3D structures using successive lithography, electroplated sacrificial layers, and flip-chip bonding
Wong et al. Amorphous silicon thin-film transistors and arrays fabricated by jet printing
JP2001179167A (en) Thin film deposition method
US20040035823A1 (en) Monolithic ink-jet printhead and method of manufacturing the same
US20030164355A1 (en) Method for forming throughhole in ink-jet print head
US20070007627A1 (en) Method of forming openings in an organic resin material
US20030027082A1 (en) Method for printing etch masks using phase-change materials
US20040027424A1 (en) Monolithic ink-jet printhead and method for manufacturing the same
US20060061629A1 (en) Inkjet printer head and method of manufacturing the same
US7547095B2 (en) Inkjet printhead having a array of nozzles with external actuators
WO2001089846A1 (en) A nozzle guard for an ink jet printhead
JP2003243327A (en) Electronic device, and method and device for forming wiring
US7850282B2 (en) Nozzle arrangement for an inkjet printhead having dynamic and static structures to facilitate ink ejection

Legal Events

Date Code Title Description
C06 Publication
C10 Entry into substantive examination
C14 Grant of patent or utility model