CN103303010B - Phase change material is utilized to produce the method for target material layer of patterning on substrate - Google Patents
Phase change material is utilized to produce the method for target material layer of patterning on substrate Download PDFInfo
- Publication number
- CN103303010B CN103303010B CN201310079615.3A CN201310079615A CN103303010B CN 103303010 B CN103303010 B CN 103303010B CN 201310079615 A CN201310079615 A CN 201310079615A CN 103303010 B CN103303010 B CN 103303010B
- Authority
- CN
- China
- Prior art keywords
- mask structure
- particle
- target material
- substrate
- dimensional printed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The present invention is the method utilizing phase change material to carry out patterning. On wafer, patterned layer is produced by deposition dimensional printed chart patterning mask structure. The target material particle being endowed energy is deposited on wafer and dimensional printed chart patterning mask, the described target material particle projected on mask structure is made to enter mask structure body and minimally be gathered on the surface of mask structure (if gathering), additionally, and the particle of target material is gathered on wafer as substantially unified layer. Dimensional printed chart patterning mask structure comprising target material particle is removed, and leaves substantially unified target material layer as the patterned layer on wafer.
Description
The cross reference of related application
The application is the sequence number for submitting on December 13rd, 2007 is 11/956,205, name is called the cip application of the jointly unsettled U. S. application of the patent licence of " MethodforPatterningusingPhase-ChangeMaterial ", and this U. S. application is incorporated to by the mode of reference and advocates its right of priority.
Technical field
It relates in semiconductor device manufacture, such as form the method for the printed layers of fine-feature, and more specifically, it relates to use dimensional printed chart patterning phase change material for the method for area mask and equipment between material depositional stage.
Background technology
Currently, in wafer-process, such as, in the manufacture of the patterned layer in semiconductor crystal wafer processes, there is the much well-known technique for selective material deposition. A kind of such technique paid close attention at this is called stripping technology (liftoffprocess). In typical stripping technology, structure against corrosion is formed on certain region of wafer, with blocking material deposition in this region. Then the material of this concern is deposited at least some part of wafer, comprises and being deposited in structure against corrosion. Then such as by dissolution with solvents structure against corrosion, thus not only structure against corrosion is removed but also remove the material paid close attention to being deposited on structure against corrosion. Like this, it is possible to obtain pattern restriction on the wafer surface when not etching. Such as, owing to stripping technology is the replacement to more common photolithography etch process, so stripping technology is commonly used to limit the geometrical shape of the material (gold) being difficult to etching.
A requirement of stripping technology is, in the process forming structure against corrosion, it is necessary to be provided for introducing the device of solvent under the concern material of deposition so that solvent can dissolve the structure against corrosion of lower section. The thickness higher (that is, thicker) of the concern material layer of this general requirement structural rate against corrosion deposition. In addition, structure against corrosion is generally patterned between depositional stage or after deposition so that solvent can contact structure against corrosion as much as possible, and makes solvent dissolve structure against corrosion as quickly as possible, and such as sidewall by providing recessed to structure against corrosion realizes.Fig. 7 A and 7B has illustrated the example of the structure used in this process. With reference to Fig. 7 A, substrate 50 is upper thereon forms structure 54 against corrosion and target material layer 56, wherein, structure 54 against corrosion is patterned as has recessed sidewall, target material layer 56 is formed in and makes first part 56a cover structure 54 against corrosion and second section 56b directly covered substrate 52(or alternately on structure 54 against corrosion, covers unshowned middle layer). Due to the recessed sidewall profile of structure 54 against corrosion, solvent be directed in region 58, thus dissolve and remove structure 54 against corrosion and with the part 56a of this solvent removing layer 56. Device after showing strip step in figure 7b.
Although peeling off is the effective technique for wafer patterning, but this technique has some restrictions. First, structure against corrosion must be formed higher than target material layer significantly, or on the contrary, relative to the thickness of structure against corrosion, the thickness of destination layer must obtain thinner. Secondly, structure against corrosion must be patterned between depositional stage or after deposition thus have recessed sidewall profile. Each in these restrictions result in relatively high cost and the complicacy of this wafer Patternized technique. In addition, to the width of useful structure against corrosion and therefore be there is restriction in the width of masked areas. If mask structure is too wide, then solvent needs a large amount of time structure to be sunk completely to cut, thus causes solvent to the less desirable infringement of other parts of structure. Therefore, there is the demand for such technique in this area: when not needing the restriction etching and not needing the width of the thickness about target material layer or masked areas, it is provided that the technique of the wafer of patterning.
Summary of the invention
Therefore, the disclosure is for a kind of system and method for generation of patterned wafer, and this system and method does not require that mask structure is higher significantly than the target material layer to be patterned. In addition, sidewall profile against corrosion needs not be recessed. In addition, the disclosure does not need after deposition to mask structure patterning. In addition, do not limit will by the width in the region of mask for the disclosure.
In addition, the thickness of structure is only depended in the removal of mask structure, does not depend on its area size. Capped contrary with target material layer, the top of mask structure is exposed. Therefore, it is not necessary to sink and cut, and mask can be corroded from above. Therefore, the thickness of mask will determine the speed removed. So, compared with the mask structure of prior art, lower and cost is lower according to the complicacy of the removal of mask structure of the present disclosure. Therefore, The present disclosure overcomes many restrictions of previously described stripping technology.
According to an aspect of the present disclosure, dimensional printed chart patterning mask structure is formed on substrate. This mask structure can be formed directly on substrate or be formed in and be formed on the middle layer on substrate. Such as, this mask structure can be formed with the use of the single drop of inkjet type print-head deposition phase change material (wax). Such as, then, target material is deposited on mask structure and it is deposited on the layer of mask structure (substrate) formed thereon. According to an embodiment, target material utilizes sufficient energy, such as, utilize kinetic energy to be deposited so that in fact the particle of the material of projection on mask structure enters the body of mask structure, contrary with the layer that accumulation becomes on the surface of mask structure. Being different from mask structure, the accumulation of this target material becomes unified layer. Therefore target material layer is discontinuous in the region of mask structure. Then the mask structure of the target material with embedding can be removed by solvent, etching reagent and/or heating, leaves the zones open previously occupied by mask structure and does not have target material.
According to another aspect of the present disclosure, target material can be heated so that its heat energy allows the particle of the material in the region of mask structure to enter the body of mask structure. Alternately, or as a supplement, mask structure can be heated to contribute to introduce between depositional stage target material.
According to an aspect of the present invention, a kind of method of target material layer producing patterning on substrate is provided, comprise: on described substrate, form dimensional printed chart patterning mask structure so that the first surface of described mask structure is towards described substrate orientation and the 2nd surface of described mask structure deviates from described substrate orientation; Sufficient energy is utilized to be led by the particle of described target material described substrate and described mask structure so that described particle enters in described 2nd surface that described mask structure, described target material are not gathered in the described 2nd on the surface substantially, described target material is gathered on described substrate as target material layer instead of is gathered on described mask structure; And remove described mask structure together with the target material particle in described mask structure so that the described target material layer on described substrate instead of on described mask structure retains as patterned layer.
According to an example, in the method for the described target material layer producing patterning on substrate, described particle is provided sufficient kinetic energy to make described particle enter described mask structure and also to comprise and be incorporated into by the particle of described target material near described substrate and described mask structure; And give kinetic energy to the particle of described introducing so that described in the kinetic energy that gives make described particle enter described mask structure.
According to another example, in the side of the described target material layer producing patterning on substrate, described particle is provided sufficient heat energy to make described particle enter described mask structure and also to comprise and be incorporated into by the particle of described target material near described substrate and described mask structure; And give heat energy to the particle of described introducing so that described in the heat energy that gives make described particle enter described mask structure.
According to Still another example, according to the method for the target material layer producing patterning on substrate of the present invention, wherein said particle is provided sufficient kinetic energy and heat energy to make described particle enter described mask structure. Further, described particle is provided sufficient kinetic energy and heat energy to make described particle enter described mask structure and to comprise and be incorporated into by the particle of described target material near described substrate and described mask structure; And give kinetic energy and heat energy to the particle of described introducing so that described in the kinetic energy that gives and heat energy make described particle enter described mask structure.
Method according to the target material layer producing patterning on substrate of the present invention, before being also included in led by the particle of described target material described substrate and described mask structure, described dimensional printed chart patterning mask structure is heated so that described heat contributes to the particle of described target material to enter into described dimensional printed chart patterning mask structure. Wherein, before the particle of described target material is led described substrate and described mask structure, the temperature that described dimensional printed chart patterning mask structure is heated in the scope of 60 DEG C to 70 DEG C so that described dimensional printed chart patterning mask structure is softened but non-fusible.
According to an aspect of the present invention, a kind of method of target material layer producing patterning on substrate is also provided, comprise the following steps: on described substrate, form dimensional printed chart patterning mask structure so that the first surface of described mask structure is towards described substrate orientation and the 2nd surface of described mask structure deviates from described substrate orientation;Lead described substrate and described mask structure by the particle of described target material, described particle is provided sufficient kinetic energy and heat energy, and described mask structure can fully permeate, make the described particle projecting described target material on described mask structure enter described mask structure described 2nd surface and be not substantially gathered in described mask structure the described 2nd on the surface, and described target material particle is gathered on described substrate in addition as target material layer instead of is gathered on described mask structure; And when not needing heavy cutting, described dimensional printed chart patterning mask structure is removed together with the target material particle in described dimensional printed chart patterning mask structure so that be gathered in the described target material layer on described substrate instead of on described mask structure not influenced in addition by dissolving described dimensional printed chart patterning mask structure.
In the method, before the particle of described target material is led described substrate and described mask structure, the temperature that described dimensional printed chart patterning mask structure is heated in the scope of 60 DEG C to 70 DEG C, described dimensional printed chart patterning mask structure is softened but non-fusible, and makes further described softening to contribute to the particle of described target material to enter into described dimensional printed chart patterning mask structure.
In the method, described particle is directed to described substrate and described mask structure by arc spray process, and described particle comprises copper, and make described copper particle the temperature projection of at least 1085 DEG C at described mask structure the described 2nd on the surface.
According to another aspect of the invention, a kind of method of target material layer producing patterning on substrate is also provided, comprise the following steps: on described substrate, form dimensional printed chart patterning mask structure so that the first surface of described mask structure is towards described substrate orientation and the 2nd surface of described mask structure deviates from described substrate orientation, lead described substrate and described mask structure by the particle of described target material, described particle is provided sufficient kinetic energy and heat energy, and described mask structure can fully permeate, make the described particle projecting described target material on described mask structure enter described mask structure described 2nd surface and be not substantially gathered in described mask structure the described 2nd on the surface, and described target material particle is gathered on described substrate as target material layer in addition instead of is gathered on described mask structure, thus on described substrate, form multiple discontinuity zones of target material, the described discontinuity zone of target material is separated by described mask structure, and when not needing heavy cutting, described dimensional printed chart patterning mask structure is removed together with the target material particle in described dimensional printed chart patterning mask structure so that be gathered in the described target material layer on described substrate instead of on described mask structure not influenced in addition by dissolving described dimensional printed chart patterning mask structure.
The temperature that described dimensional printed chart patterning mask structure is heated in the scope of 60 DEG C to 70 DEG C before being also included in led by the particle of described target material described substrate and described mask structure by the method so that described heat contributes to the softening of described mask structure and contributes to the particle of described target material to enter into described dimensional printed chart patterning mask structure.
In the method, described particle is directed to described substrate and described mask structure by arc spray process, and described particle comprises copper, and make described copper particle the temperature projection of at least 1085 DEG C at described mask structure the described 2nd on the surface.
The above is the general introduction of the aspects, features and advantages of many uniquenesses of the present disclosure. But, In this Section is not exhaustive. Therefore, when considering according to claim provided herein, these and other aspects, features and advantages of the present disclosure become more obvious by from detailed description below and accompanying drawing.
Accompanying drawing explanation
Being in the figure appended by this, similar Reference numeral represents the similar element between each accompanying drawing. Illustrated while, accompanying drawing is not according to true scale. In the accompanying drawings:
Fig. 1 is the diagram of the system of the deposition for the dimensional printed chart patterning mask material such as can being used in a step of the present disclosure.
Fig. 2 is the diagram forming this wafer in the process of mask structure according to an embodiment of the present disclosure on wafer.
Fig. 3 be according to an embodiment of the present disclosure its on be formed with mask structure and be in the diagram that target material is applied the wafer in its process.
Fig. 4 is the diagram of the electric arc spraying equipment that can use in a step of the present disclosure.
Fig. 5 is the diagram of this wafer forming target material layer on wafer according to step of the present disclosure and the mask structure with the target material being embedded in combination wherein being removed from wafer.
Fig. 6 be a diagram that the process flow sheet according to various step of the present disclosure, and in those steps, dotted line represents optional step.
Fig. 7 A and Fig. 7 B is according to stripping technology well-known in the art respectively, the diagram of the wafer being patterned and the wafer being patterned.
Embodiment
In the following detailed description, it may also be useful to numeral lithography forms dimensional printed chart patterning mask. Numeral lithography is the technique being deposited directly on substrate by material for the pattern to expect, that replaces the precision and gravure processes consuming time that use in traditional wafer manufactures. Numeral lithography generally uses printing head controllably to spray single drop to form patterned layer on multiple regions of substrate from reservoir. Drop is phase change material normally. An application of numeral lithography is the form deposition material (therefore this mask is referred to here as " dimensional printed chart patterning mask ") being designed to be used as the printed patterns of mask. Certainly, it will be understood that, other print system can also be used for forming mask, because will become to be apparent that from following description, compared with the deposition method of material, the material forming mask forms more crucial aspect of the present disclosure.
Describing the system of the embodiment of method being suitable for implementing hereafter setting forth in the U.S. Patent No. 6,972,261 of the people such as Wong, the open of this United States Patent (USP) is incorporated to herein by the mode of reference. More specifically, with reference to Fig. 1, shown therein is the associated components of system 10, system 10 comprises thermal source 12, and the general reservoir 14 containing phase change material is heated by thermal source 12. Thus phase change material is heated to is enough to material maintains liquid temperature. The temperature of reservoir maintains more than 50 degrees Celsius usually, and in some cases, maintains more than 100 degrees Celsius, namely maintains the temperature being enough to a lot of organic materials being in solid phase near room temperature is liquefied.
Phase change material can be the organic materials in the temperature melting higher than room temperature. Other ideal behaviores of phase change material comprise patterning materials be not be deposited on or will be deposited on wafer and be used in this kind deposition in organic materials and inorganic materials occur reaction, and phase change material to etching reagent and particularly solvent there is highly selective. In an embodiment, phase change material is dissolved in basic solution (that is, " alkali can move "), although in other embodiments, can other characteristics adopting solvent and/or equipment remove (if needs) phase change material.
Wax is the example of the phase change material with afore-mentioned characteristics. From the Connecticut State Middlebury Crompton company based on Kemamide(stearylamide) wax of 180 is an only example of the suitable wax being used as phase transformation patterning materials.
Returning to Fig. 1, within the system, one or more droplet source of such as droplet source 16 receives the liquid phase change material from reservoir 14 and exports drop 18 to deposit on the base plate 20. Substrate 20 can maintain the temperature that drop is cooled rapidly after deposit.
When increase between adjacent drops coalescent is required, such as, forming size and be greater than when being covered region of size (diameter is approximately 30-40 micron) of single drop, can raise substrate temperature to increase drop diffusion and thus increases coalescent. When print from acoustic ink jet printer based on the line of the wax of Kemamide time, it has been found that substrate temperature is elevated to, from 30 degrees Celsius, the printing quality that 40 degrees Celsius improve pattern. When based on the wax of Kemamide, it has been found that when surface maintains 40 degrees Celsius about 20 degrees Celsius of the solid phase point lower than wax (this be), reached fabulous result. At 40 degrees Celsius, the temperature of substrate is still enough low so that drop solidifies rapidly when contact substrate 20.
Phase change material droplet deposition on the base plate 20 after, substrate 20 is conditioned to change the position of droplet source 16 on the second position to be patterned with the relative position of droplet source 16. The operation of this change position by mobile droplet source 16 or can be realized by moving substrate 20. As shown in Figure 1, pilot circuit 22 is with predetermined pattern mobile droplet source 16 on substrate 20. Driving circuit 24 provides energy to droplet source 16, thus causes the injection of drop at droplet source 16 when being positioned on the region of the substrate 20 to be patterned. By making the movement of droplet source 16 coordinate mutually with the timing that droplet source exports, it is possible on the base plate 20 " printing " go out pattern.
The current method described finally is used for producing wafer and other structures of patterning. Therefore it is intended that specific position on the surface of substrate 20 forms printed mask feature. The position alignment routine forming the deposition of the drop 18 of dimensional printed chart patterning mask controls the relative movement of droplet source and substrate with the use of fiducial mark, digital imagery and process and treater and realizes in numeral lithography system. It is the numeral imprint lithography remarkable advantage next compared with other masking methods by image procossing by the ability being formed in alignment on substrate 20 of mask before patterning and while patterning.
In order to control and the movement of the droplet source 16 that aligns, the printing benchmark alignment mark such as marking 26 can be applied in or be formed in and will apply thereon on the surface of layer of phase change material. Alternately, fiducial mark can be positioned on carrier maintenance substrate 20 during depositing operation (not shown). The such as image processing system of pick up camera 28 can be used for coordinating the orientation of drop and will applying the orientation on the surface of drop thereon. Treatment system then by changing the position that pattern image file regulates patterned layer before the actual printing of patterned layer. Location regulates realization in software and is converted to the movement of fluid supply 16.
Each droplet source can utilize the multiple technologies comprising traditional ink-jet technology to implement. The substitute technology being very suitable for producing minimum drop size uses sound wave to cause the injection of the liquid of patterning materials, as carried out in the acoustics ink print system described in the U.S. Patent No. 6,972,261 of the people such as such as Wong.The example of these systems being suitable for the injection of the drop of phase change material comprises: ink-jet system (such as ink-jet system disclosed in United States Patent (USP) 4,131,899, this United States Patent (USP) is incorporated to herein by the mode of reference); Ballistic aerosol mark (BAM) device (such as device disclosed in United States Patent (USP) 6,116,718, this United States Patent (USP) is incorporated to herein by the mode of reference); Acoustics ink printer (AIP) system (United States Patent (USP) 4,959,674, this United States Patent (USP) is incorporated to herein by the mode of reference); Carrier-Mo injector (as, disclosed in United States Patent (USP) 5,958,122, this United States Patent (USP) is incorporated to herein by the mode of reference); Deflection control ink-jet system (such as disclosed in United States Patent (USP) 3,958,252, this United States Patent (USP) is incorporated to herein by the mode of reference), etc. This kind of system also comprises pattern transfer system, such as xerographic printing system, ionic spectrum system, web system, contact system and gravu re system etc.
Next what describe is the formation of dimensional printed chart patterning mask and is formed with the concrete steps of the production of the patterned wafer of described mask. Fig. 2 to Fig. 5 illustrate the production of the device in the technique according to Fig. 6 some intermediate stages place the first embodiment of this device. Although below describe referring in particular to be the device shown in Fig. 2 to Fig. 5, and without the need to the device shown in Fig. 2 to Fig. 5 carries out reference more specifically, what description below was followed is the order shown in Fig. 6.
With reference to Fig. 2, illustrate the technique forming mask on substrate for the production of patterned wafer. The surface that the drop 18 sprayed from droplet source 16 impacts substrate 30 is to form mask feature 32. Although this description supposes that drop 18 is deposited directly on the surface of substrate 30, it will be understood that, in the scope of this description, drop 18 can also deposit on the surface being formed at substrate 30 or on middle layer (not shown) on. Although the size of mask feature 32 can change according to the temperature of the surface properties of the volume of the material sprayed from droplet source 16, the material comprising drop 18, substrate 30 (affecting the wetting of drop), substrate 30 etc., but mask feature 32 generally will have the diameter of 30 to 50 microns. Wider mask feature can be obtained by foregoing such coalescent adjacent drop. Mask feature 32 forms dimensional printed chart patterning mask together with multiple this kind of similar feature (not shown). Substrate 30 forms structure 34 together with dimensional printed chart patterning mask (with any one or more middle layers).
Next target material is deposited on structure 34. The dimensional printed chart patterning mask formed by feature 32 represents together with multiple this kind of similar feature will not have the region of this kind of deposition material on substrate 30. Figure 3 illustrates the deposition of target material. Target material can be the one in multiple material, element or alloy widely. A concrete example of the particle of target material 36 is aluminium (Al). Although the target material of reality can change, but its deposition method and character form important aspect of the present disclosure.
According to first embodiment of the present disclosure, deposit target material by electric arc spraying process. Figure 4 illustrates the equipment 40 for electric arc spraying. In electric arc spraying process, by means of electric arc in the fusing one of 44 places to electric lead 42a, 42b. The material of fusing is atomized by pressurized air and advances towards the surperficial of substrate 30.There is the fusing granule impact substrate of energy and solidify to form coating on substrate.
Returning to Fig. 3, the atomizing particle 36 of target layer materials is directed to structure 34. Two different results are obtained simultaneously. First, in the region that the surface of substrate 30 is exposed (that is, except being provided with the position of mask feature 32), the particle aggregation of atomization forms target material layer 38. Secondly, make particle 36 have abundant energy by electric arc spraying process, so that, in the region of mask feature 32, in fact particle enters the body of the material forming mask feature 32. If the major part of this kind of particle is energy abundance ground, then considerably less this particle (if any) is gathered on the surface of mask feature 32, instead of turns into being embedded in wherein. Like this, in fact layer 38 is discontinuous in the region of mask feature 32.
It will be understood that although likely the sub-fraction of target material particle does not drop on the surface of mask feature 32, the quantity of this kind of particle will be relatively very little, and the thickness of the layer of this kind of particle on mask feature 32 will be relatively very thin. This kind of thin layer easily with relative thick many target material layer 38 are separated (normally voluntarily, such as, cause contraction by cold), thus effectively make layer 38 discontinuous.
It can be one or more forms that target material particle 36 enters the energy needed for the body of mask feature 32. Particle 36 can such as have enough kinetic energy to enter feature 32. Such as, kinetic energy is transmitted in the direction of feature 32 with the momentum form of particle for the propelling thing of electric arc spraying process. When having sufficient momentum (and permeability of the material of morphogenesis characters 32), self can be embedded in feature 32 by particle 36.
Particle 36 can also have enough heat energy to enter feature 32. Such as, in the process making conductor material be atomized, described material is heated by electric arc. Although particle may pass to environment the part in this heat energy, but the heat energy that particle can keep enough to cause the local softening of the material of morphogenesis characters 32 or even melts so that particle turns into being embedded in feature 32.
Certainly, particle 36 can have the combination being enough to cause it to enter the kinetic energy in feature 32 and heat energy. Such as, electric arc spraying process generally provides momentum and heat from wire when particle is atomized to particle. In the present embodiment, therefore, it is that the combination of kinetic energy and heat energy causes being incorporated in the body of feature 32 particle 36.
Particle 36 is the function of the hardness of feature 32 with entering the energetic portions needed for feature 32, and the hardness of feature 32 is then the function of the temperature of feature 32. For thermal spray deposition, due to the material melts to be deposited, so providing the condition with the abundant adhesion of substrate to provide enough heat energy by being enough to wax mask. Thermal spraying material needs to be fusing when depositing on the surface. This melted state temperature will change according to material. When particle 36 comprises copper, the temperature of particle 36 should be at least 1085 degrees Celsius thus be in its melted state. In this temperature, the particle 36 of copper will easily enter feature 32.
Energy is given to particle 36 above, but to reduce the energy needed for these particles by the attribute of effect characteristics 32 be also possible although paying close attention to. Such as, in an embodiment of the present disclosure, feature 32 is made it be softened and reduce particle 32 and turn into being embedded in wherein required energy by heating.This kind of heat can provide by being heated by substrate 30, by raising envrionment temperature etc. Wax mask can be heated to the temperature that below its temperature of fusion is still enough to make feature softening, such as, in the scope of 60 degrees Celsius to 70 degrees Celsius. If using the wax of higher melt, then the temperature making biomaterials become enough soft may be higher.
For PVD deposition, substrate to be heated generally will be needed. But, in certain embodiments, the scope (or other suitable scopes, this depends on the material used) making feature reach 60 degrees Celsius to 70 degrees Celsius environment heating is possible. Further, compared with substrate 30, optionally Heating Characteristics 32 is possible. Such as, infrared (IR) part that particle may be used for feature 32 is received. Then IR source can be made to project in feature 32 and substrate 30, thus preferential Heating Characteristics 32. Other preferential heating techniques can be used, such as, there is the scanning feature 32 in the accurate source of such as laser.
In addition, the material forming mask feature 32 can be chosen as and make it relatively softer maybe can permeate, to make the required energy minimization of particle 36. A lot of different ingredients (such as, wax) of mask material are known, as the physical attribute of these materials is known. Therefore, when knowing the mode of deposition of these attributes and particle 36, it is possible to set up the condition making particle 36 enter feature 32 as previously mentioned.
An effect of above-mentioned technique and operational condition is, in certain embodiments, from covered by target material layer different, the end face (that is, the top of mask) of feature 32 be expose. Therefore, it is not necessary to after target material deposits, in order to remove mask, heavy the cutting of this mask can be removed mask (and the target material embedded) by etching from top to bottom simply too much, that cost is lower and invasive is less.
Above-mentioned electric arc spraying process can be operating as " cold " technique, it means that lost the heat energy of major part owing to being atomized when atomizing particle arrives substrate to them. In this case, the heating of feature 32 and/or select relatively soft material will contribute to introducing wherein particle 32 for feature 32.
Although focusing on electric arc spraying process above, but it is to be appreciated that, much other deposition techniques can be compatible with the disclosure. Physical vapor deposition (PVD), laser and electric arc assist PVD, sputtering and molecular beam epitaxy (MBE) to be can provide sufficient kinetic energy or heat energy or the rwo thus cause target material atom to enter the example of physical technology of body (different from form layers in mask feature 32) of mask feature 32. Chemical vapor deposition (CVD) is can provide sufficient chemical energy so that target material atom enters the example of the chemical technology of the body (different from form layers in mask feature 32) of mask feature 32 with plasma enhanced CVD (PECVD).
Next with reference to Fig. 5, method of the present disclosure is from removing mask feature 32 and being embedded in the step of target material wherein. Technique and material major part for this removal step depend on the material for mask feature 32 is selected. In certain embodiments, the technique used and material also depend on the target material being attached in mask feature 32 between its depositional stage. According to an embodiment, feature 32 comprises above-mentioned Kemamide wax. Such as the solvent of tetrahydrofuran (THF) or other solvents known in the art is applied in this structure, or alternately, this structure is immersed in the groove of this kind of solvent to remove mask structure, and wherein, this solvent can also be heated. Importantly, along with the removal of mask structure, it is embedded in target material wherein and it is removed. Solvent and removal condition should make the deposition target material stayed after mask structure is removed therefore to be damaged. Owing to target material layer 38 is discontinuous at the zone of mask feature 32, so the removal of mask feature 32 can not damage layer 38 in the process.
Figure 6 illustrates the complete process 60 for the formation according to patterned wafer of the present disclosure. According to technique 60, after step 62 is to the cleaning of any necessity of substrate and preparation, in step 64 dimensional printed chart patterning mask deposition. Now, in step 66, the particle of the target material that should form patterned layer on substrate is introduced near substrate. These particles can be introduced into can be embedded in the material forming dimensional printed chart patterning mask with the energy expected, or, in optional step 68, these particles can be given energy as required. Such as, in addition, in optional step 70, substrate can be processed (being heated) to reduce institute's energy requirement of particle. In step 72, make particle aggregation on substrate and it is embedded in dimensional printed chart patterning mask. Finally, in step 74, peeling off dimensional printed chart patterning mask, take away being embedded in target material particle wherein together with mask, the target material leaving gathering is as the patterned layer on substrate.
Physics and the production method thereof of modern electric installation are not absolute, but produce the effort statistically of equipment and/or the result expected. Even if giving maximum concern to the purity etc. of the repeatability of technique, the degree of cleaning of manufacturing facility, initial material and process material, difference and flaw also can be produced. Therefore, the restriction in the description of the disclosure or its claim can also should not be construed to is absolute. The restriction of claim is intended to be limited to boundary of the present disclosure these and limits and comprise these restrictions. In order to give prominence to this point further, term " substantially " can use (although the consideration of difference and flaw is not limited only to the restriction used with this term) in ground relevant to the restriction of claim once in a while herein. Although be difficult to limit the restriction as the disclosure self accurately, but we are intended to make this term be interpreted as " in bigger degree ", " can carry out ground as far as possible ", " in technical limitation " etc.
Although the multiple preferred exemplary embodiment proposed in the detailed description above, it is to be understood that, there is a large amount of modification, and these preferred embodiments are only representative illustration, it is not intended to limit the scope of the present disclosure, suitability or configuration by any way. Such as, description above focuses on and is formed directly on the surface of substrate by patterned layer. But, carry out according on any one or more layers that technique of the present disclosure can be formed on substrate. In addition, according to the disclosure, one or more layers of material can be deposited on the layer of patterning. In fact, these follow-up layers can oneself be patterned by technique of the present disclosure. Therefore, the mode being described through example in detail above provides to those of ordinary skill in the art to be implemented of the present disclosure to guide easily, and can expect, when not deviateing the spirit and scope of the present disclosure being defined by the following claims, the function of described embodiment and the multiple change of layout can be carried out.
Claims (16)
1. on substrate, produce a method for the target material layer of patterning, comprise the following steps:
Dimensional printed chart patterning mask structure is formed so that the first surface of described mask structure is towards described substrate orientation and the 2nd surface of described mask structure deviates from described substrate orientation on described substrate;
Described dimensional printed chart patterning mask structure is heated so that described dimensional printed chart patterning mask structure is softened but non-fusible in the scope of 60 DEG C to 70 DEG C; After heating,
Sufficient energy is utilized to be led by the particle of described target material described substrate and described mask structure so that:
The described particle of described target material enters described mask structure in described 2nd surface;
The described particle of described target material is not gathered in the described 2nd on the surface substantially;
The described particle of described target material is gathered on described substrate as target material layer instead of is gathered on described mask structure;
Described heating contributes to the described particle of described target material to enter into described dimensional printed chart patterning mask structure; And
Described particle together with the target material in described mask structure removes described mask structure so that the described target material layer on described substrate instead of on described mask structure retains as patterned layer.
2. method according to claim 1, the step removed also is included in when not needing heavy cutting, described particle together with the described target material in described dimensional printed chart patterning mask structure removes described dimensional printed chart patterning mask structure, thus leaves the step of basic unified described target material layer as the patterned layer on described substrate.
3. method according to claim 2, the step wherein removing described dimensional printed chart patterning mask structure together with the described particle of the described target material in described dimensional printed chart patterning mask structure comprises described 2nd surface to described dimensional printed chart patterning mask structure and applies solvent, and described solvent makes described dimensional printed chart patterning mask structure dissolve but do not affect the described target material layer being gathered on described substrate.
4. method according to claim 2, the step wherein removing described dimensional printed chart patterning mask structure together with the described particle of the described target material in described dimensional printed chart patterning mask structure comprises described 2nd surface to described dimensional printed chart patterning mask structure and applies etching reagent, and described dimensional printed chart patterning mask structure is etched but do not affect the described target material layer being gathered on described substrate by described etching reagent.
5. method according to claim 1, wherein said particle is provided sufficient kinetic energy to make described particle enter described mask structure.
6. method according to claim 5, wherein, utilizes sufficient energy the particle of described target material to lead described substrate and described mask structure also comprises the following steps:
The particle of described target material is incorporated near described substrate and described mask structure.
7. method according to claim 1, wherein said particle is provided sufficient heat energy to make described particle enter described mask structure.
8. method according to claim 7, wherein, utilizes sufficient energy the particle of described target material to lead described substrate and described mask structure also comprises the following steps:
The particle of described target material is incorporated near described substrate and described mask structure.
9. method according to claim 1, wherein said particle is provided sufficient kinetic energy and heat energy to make described particle enter described mask structure.
10. method according to claim 9, wherein, utilizes sufficient energy the particle of described target material to lead described substrate and described mask structure also comprises the following steps:
The particle of described target material is incorporated near described substrate and described mask structure.
11. methods according to claim 1, wherein compared with the region not covered by described dimensional printed chart patterning mask structure of described substrate, described dimensional printed chart patterning mask structure is selectively heated.
12. methods according to claim 1, wherein said particle is directed to described substrate and described mask structure by arc spray process, described particle comprises copper, and make described copper particle the temperature projection of at least 1085 DEG C at described mask structure the described 2nd on the surface.
13. 1 kinds produce the method for the target material layer of patterning on substrate, comprise the following steps:
Dimensional printed chart patterning mask structure is formed so that the first surface of described mask structure is towards described substrate orientation and the 2nd surface of described mask structure deviates from described substrate orientation on described substrate;
Described dimensional printed chart patterning mask structure is heated to the temperature in the scope of 60 DEG C to 70 DEG C so that described dimensional printed chart patterning mask structure is softened but non-fusible; After heating,
Lead described substrate and described mask structure by the particle of target material, the described particle of described target material is provided sufficient kinetic energy and heat energy, and described mask structure can fully permeate, make the described particle projecting described target material on described mask structure enter described mask structure described 2nd surface and be not substantially gathered in described mask structure the described 2nd on the surface, and the described particle of described target material is gathered on described substrate in addition as target material layer instead of is gathered on described mask structure; And
When not needing heavy cutting, described dimensional printed chart patterning mask structure is removed together with the described particle of the described target material in described dimensional printed chart patterning mask structure so that be gathered in the described target material layer on described substrate instead of on described mask structure not influenced in addition by dissolving described dimensional printed chart patterning mask structure.
14. methods according to claim 13, wherein said particle is directed to described substrate and described mask structure by arc spray process, described particle comprises copper, and make described copper particle the temperature projection of at least 1085 DEG C at described mask structure the described 2nd on the surface.
15. 1 kinds produce the method for the target material layer of patterning on substrate, comprise the following steps:
Dimensional printed chart patterning mask structure is formed so that the first surface of described mask structure is towards described substrate orientation and the 2nd surface of described mask structure deviates from described substrate orientation on described substrate;
By the temperature that described dimensional printed chart patterning mask structure is heated in the scope of 60 DEG C to 70 DEG C so that described patterned mask structure softening but non-fusible; After heating,
Lead described substrate and described mask structure by the particle of target material, described particle is provided sufficient kinetic energy and heat energy, and described mask structure can fully permeate, make the described particle projecting described target material on described mask structure enter described mask structure described 2nd surface and be not substantially gathered in described mask structure the described 2nd on the surface, and the described particle of described target material is gathered on described substrate as target material layer in addition instead of is gathered on described mask structure, thus on described substrate, form multiple discontinuity zones of target material, the described discontinuity zone of target material is separated by described mask structure, and
When not needing heavy cutting, described dimensional printed chart patterning mask structure is removed together with the described particle of the described target material in described dimensional printed chart patterning mask structure so that be gathered in the described target material layer on described substrate instead of on described mask structure not influenced in addition by dissolving described dimensional printed chart patterning mask structure.
16. methods according to claim 15, wherein said particle is directed to described substrate and described mask structure by arc spray process, described particle comprises copper, and make described copper particle the temperature projection of at least 1085 DEG C at described mask structure the described 2nd on the surface.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/419351 | 2012-03-13 | ||
| US13/419,351 US8765226B2 (en) | 2007-12-13 | 2012-03-13 | Method for patterning using phase-change material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103303010A CN103303010A (en) | 2013-09-18 |
| CN103303010B true CN103303010B (en) | 2016-06-15 |
Family
ID=49128914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310079615.3A Expired - Fee Related CN103303010B (en) | 2012-03-13 | 2013-03-13 | Phase change material is utilized to produce the method for target material layer of patterning on substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103303010B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107139587B (en) * | 2017-04-27 | 2019-05-24 | 昆山国显光电有限公司 | Marking equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4412377A (en) * | 1981-01-23 | 1983-11-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a hybrid integrated circuit device |
| US6742884B2 (en) * | 2001-04-19 | 2004-06-01 | Xerox Corporation | Apparatus for printing etch masks using phase-change materials |
| US6872320B2 (en) * | 2001-04-19 | 2005-03-29 | Xerox Corporation | Method for printing etch masks using phase-change materials |
| US6972261B2 (en) * | 2002-06-27 | 2005-12-06 | Xerox Corporation | Method for fabricating fine features by jet-printing and surface treatment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7261920B2 (en) * | 2002-04-24 | 2007-08-28 | Sipix Imaging, Inc. | Process for forming a patterned thin film structure on a substrate |
-
2013
- 2013-03-13 CN CN201310079615.3A patent/CN103303010B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4412377A (en) * | 1981-01-23 | 1983-11-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a hybrid integrated circuit device |
| US6742884B2 (en) * | 2001-04-19 | 2004-06-01 | Xerox Corporation | Apparatus for printing etch masks using phase-change materials |
| US6872320B2 (en) * | 2001-04-19 | 2005-03-29 | Xerox Corporation | Method for printing etch masks using phase-change materials |
| US6972261B2 (en) * | 2002-06-27 | 2005-12-06 | Xerox Corporation | Method for fabricating fine features by jet-printing and surface treatment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103303010A (en) | 2013-09-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2395394B1 (en) | Method for printing etch masks using phase-change materials | |
| CN101993032B (en) | Method for manufacturing microstructural film pattern and TFT-LCD array substrate | |
| US6972261B2 (en) | Method for fabricating fine features by jet-printing and surface treatment | |
| CN1721569B (en) | Coat base with curved surface and method for manufacturing such coat base | |
| JP4738079B2 (en) | Method for producing a patterned optical filter layer on a substrate | |
| US7670652B2 (en) | Method of manufacturing patterned film | |
| EP1670596B1 (en) | Method of pattern coating | |
| JP5935179B2 (en) | Vapor deposition mask and vapor deposition mask manufacturing method | |
| EP1011298B1 (en) | Substrate for formation of special pattern, and method of manufacture of substrate | |
| CN102180016B (en) | Super oleophobic and super hydrophobic surface and preparation method thereof | |
| CN103358702B (en) | Liquid discharging head and manufacture method thereof | |
| CN102983289B (en) | Method for maskless encapsulation | |
| CN100461986C (en) | Fast production method for printed board | |
| CN105789031A (en) | Mask for laser direct writing and etching method of mask | |
| CN103303010B (en) | Phase change material is utilized to produce the method for target material layer of patterning on substrate | |
| CN102785479A (en) | Enhancing superoleophobicity and reducing adhesion through multi-scale roughness by ald/cvd technique in inkjet application | |
| US20070221611A1 (en) | Method of manufacturing fine features for thin film transistors | |
| US20080280114A1 (en) | Method for depositing a target material onto a substrate, laser deposition system for performing the method, and housing made by the method | |
| CN103828495A (en) | Substrate manufacturing method | |
| US20070221610A1 (en) | Method using monolayer etch masks in combination with printed masks | |
| KR20080046125A (en) | Electronic parts fabrication apparatus, wiring pattern sheet, electronic device sheet and sheet | |
| US8765226B2 (en) | Method for patterning using phase-change material | |
| RU2617703C2 (en) | Method and system for transfer electrically conductive material in fluid form on substrate for print | |
| US6126272A (en) | Ink spraying device for print head | |
| CN103085480B (en) | Process for producing liquid ejection head |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160615 Termination date: 20210313 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |