CN103295529A - Organic light emitting diode (OLED) pixel drive method and OLED pixel drive circuit for method - Google Patents
Organic light emitting diode (OLED) pixel drive method and OLED pixel drive circuit for method Download PDFInfo
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Abstract
The invention discloses an OLED pixel drive method capable of adjusting the gray scale accurately and an OLED pixel drive circuit for the method. According to the method, an OLED light-emitting unit is enabled to switch in on and off states only, when the OLED light-emitting unit is in the on state, the current passing through the OLED light-emitting unit is constant, and gray scale adjustment of the OLED light-emitting unit is achieved by controlling the on-state light-emitting time of the OLED light-emitting unit. According to the method, gray scale adjustment of the OLED light-emitting unit is creatively achieved by controlling on-state light-emitting time of the OLED light-emitting unit instead of by controlling the size of the current passing through the OLED light-emitting unit, and control on the on-state light-emitting time of the OLED light-emitting unit is easy and accurate, so that the gray scale can be adjusted accurately and the uniformity of a display screen can be improved through the OLED pixel drive method.
Description
Technical field
The present invention relates to a kind of OLED image element driving method and reach the OLED pixel-driving circuit that is used for this method.
Background technology
The Organic Light Emitting Diode of driven with active matrix (Active Matrix Organic Light Emitting Diode, AMOLED) because have the luminosity height, advantage such as driving voltage is low, response speed is fast, the restriction of no visual angle, efficiency height, ultralight are ultra-thin, have great application prospect.The pixel-driving circuit of present most OLED all is to be applied to electric current that voltage on the OLED luminescence unit or change flow through the OLED luminescence unit by change to realize that gray scale regulates.In AMOLED, the realization of brightness is to be determined by the electric current that flows through OLED self, above-mentioned analog-driven (being that voltage drives and current drives) method is owing to be difficult to realize precise current control, thereby can not carry out accurate gray scale to the OLED luminescence unit and regulate, also just can't solve the inhomogeneity problem of display screen.
Summary of the invention
Technical matters to be solved by this invention provides a kind of OLED pixel-driving circuit that can reach the OLED image element driving method that gray scale is accurately regulated for this method.
OLED image element driving method of the present invention be that the OLED luminescence unit is only changed under ON state and OFF state two states, and when the OLED luminescence unit was in ON state, the electric current that flows through this OLED luminescence unit was constant; Gray scale adjusting to the OLED luminescence unit realizes by controlling this OLED luminescence unit ON state fluorescent lifetime.Characteristic according to human eye, the brightness that eyes are experienced is not only relevant with the luminous intensity of luminophor, also relevant with the luminous duration, in view of this, said method of the present invention is regulated the gray scale of OLED luminescence unit and has creationaryly been taked that this OLED luminescence unit ON state is luminous to be realized by controlling, and no longer be to realize by the size that the electric current of OLED luminescence unit is flow through in control, because it is more easy and accurate to the control of OLED luminescence unit ON state fluorescent lifetime, therefore, OLED image element driving method of the present invention can be regulated more accurately to gray scale, improves the display screen homogeneity.
The OLED pixel-driving circuit that is used for said method, comprise: the first transistor, transistor seconds, the 3rd crystal, the 4th transistor, memory capacitance and OLED luminescence unit, the first transistor wherein is the P transistor npn npn, transistor seconds is the N-type transistor, described the first transistor and transistor seconds constitute phase inverter, and the 3rd transistor and the 4th transistor constitute the switch of OLED pixel-driving circuit; The source electrode of the first transistor links to each other with external power source with the 3rd transistorized source electrode simultaneously, the drain electrode of the first transistor links to each other with the anode of OLED luminescence unit and the drain electrode of transistor seconds simultaneously, the negative electrode of OLED luminescence unit and the source ground of transistor seconds, the 3rd transistor drain, the grid of the first transistor and the grid of transistor seconds link to each other with first end of memory capacitance simultaneously, second end of memory capacitance links to each other with the 4th transistor drain, the 3rd transistorized grid links to each other with the SELECT signal wire, the 4th transistorized source electrode links to each other with the DATA signal wire, and the 4th transistorized grid links to each other with the SCAN signal wire.When the OLED luminescence unit in this OLED pixel-driving circuit is luminous, the electric current that flows through this OLED luminescence unit is subjected to the influence of the first transistor threshold voltage shift minimum, can ignore, therefore can guarantee that the OLED luminescence unit has constant electric current to flow through, and has increased stability.
Described the first transistor, transistor seconds, the 3rd crystal and the 4th transistor are selected from any one in metal-oxide-semiconductor field effect transistor, polycrystalline SiTFT, metal oxide thin-film transistor, the OTFT respectively.
The present invention is described further below in conjunction with the drawings and specific embodiments.The aspect that the present invention adds and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Fig. 1 is pixel-driving circuit structural representation in the embodiment of the invention one.
Fig. 2 adopt for embodiment one the family curve of brightness-current-voltage.
Fig. 3 is the sequential control figure that opens each sweep signal in the embodiment of the invention one.
Fig. 4 is the sequential control figure that closes each sweep signal in the embodiment of the invention one.
Fig. 5 is pixel-driving circuit structural representation in the embodiment of the invention two.
Fig. 6 is the sequential control figure that opens each sweep signal in the embodiment of the invention two.
Fig. 7 is the sequential control figure that closes each sweep signal in the embodiment of the invention two.
Fig. 8 is pixel-driving circuit structural representation in the embodiment of the invention three.
Fig. 9 is the sequential control figure that opens each sweep signal in the embodiment of the invention three.
Figure 10 is the sequential control figure that closes each sweep signal in the embodiment of the invention three.
Figure 11 executes pixel-driving circuit structural representation in the example four for the present invention.
Figure 12 is that the present invention executes the sequential control figure that opens each sweep signal in the example four.
Figure 13 is that the present invention executes the sequential control figure that closes each sweep signal in the example four.
Embodiment
Embodiment one
First optimal way of embodiment one:
The pixel-driving circuit structure as shown in Figure 1, comprise the first transistor M1, transistor seconds M2, the 3rd crystal M3, the 4th transistor M4, memory capacitance CS and OLED luminescence unit, the first transistor M1 wherein, the 3rd crystal M3, the 4th transistor M4 is the PMOS field effect transistor, transistor seconds M2 is the NMOS field effect transistor, the source electrode of the first transistor M1 links to each other with external power source VDD, the anode of the drain electrode of the first transistor M1 and OLED luminescence unit and the drain electrode of transistor seconds M2 link to each other (being connected in the C point among Fig. 1), the source ground of the negative electrode of OLED luminescence unit and transistor seconds M2, the source electrode of the 3rd crystal M3 links to each other with described external power source VDD, the drain electrode of the 3rd crystal M3, the grid of the first transistor M1, the grid of transistor seconds M2 link to each other with first end of memory capacitance CS (being connected in the B point among Fig. 1), second end of memory capacitance CS link to each other with the drain electrode of the 4th transistor M4 (being connected in the A point among Fig. 1), the grid of the 3rd transistor M3 links to each other with the SELECT signal wire, the source electrode of the 4th transistor M4 links to each other with the DATA signal wire, the grid of the 4th transistor M4 links to each other with the SCAN signal wire, the first transistor M1 wherein, transistor seconds M2 constitutes phase inverter, described B point can be regarded the input end of phase inverter as, the C point can be regarded the output terminal of phase inverter as, and the C point also is the drain electrode of the first transistor M1 and the anode of OLED luminescence unit simultaneously.
Characteristic according to phase inverter, enough hour of the voltage of ordering as B can make transistor seconds M2 close, the first transistor M1 conducting, this moment, external power source VDD was added on the OLED luminescence unit through the first transistor M1, flow through the OLED luminescence unit so have a constant electric current.The size of this electric current is determined by the characteristic of OLED luminescence unit and the first transistor M1.If the size of this electric current is I
D, then this electric current had both equaled to flow through the electric current I of the first transistor M1
M1, equal to flow through the electric current of OLED luminescence unit again.
K wherein
P=(1/2) μ
PC
OX(W/L) be the conduction factor of the first transistor M1, V
THBe the threshold voltage of the first transistor M1, V
DSBe the drain-source voltage of the first transistor M1, I
SWith n be respectively reverse saturation current and the emission ratio during for the diode model OLED luminescence unit equivalence.
Fig. 2 is the family curve of brightness-current-voltage of the OLED of embodiment one, and wherein elemental area is 15 * 15 μ m
2By family curve as can be seen, when the OLED luminescence unit was operated in 4.2V, the brightness of OLED luminescence unit had reached 500cd/m
2, the electric current that flows through the OLED luminescence unit this moment only is 8.5nA.When the electric current of nA level flows through the first transistor M1, V
DSBe the nV level.If the threshold voltage of the first transistor M1 is when drift along with the time, V
DSRemain the nV level, so the variation meeting of the drain voltage of the first transistor M1 (being the anode voltage of OLED luminescence unit) is less than 10
-9V, by the family curve of the brightness-current-voltage of OLED the first transistor as can be seen, so little change in voltage can be ignored to the influence of the electric current that flows through the OLED the first transistor.So this image element circuit is insensitive to the drift of threshold voltage, has increased stability.This image element circuit is to realize gray shade scale by the fluorescent lifetime of control OLED the first transistor, and it is luminous and not luminous to be to realize by the scanning sequence of controlling each signal.Can be luminous in a certain if the OLED luminescence unit is in, claim this for opening the field, not luminous all the time if the OLED luminescence unit is in a certain, then claim this for closing the field.
Open the scanning sequence of each signal as shown in Figure 3, the concrete course of work is as follows:
Phase one: the SCAN signal is in low level, and the DATA signal is in high level, and the SELECT signal is in low level.The 4th transistor M4 is in conducting state under the effect of SCAN, the 3rd transistor M3 is in conducting state under the effect of SELECT.The voltage at electric capacity two ends is respectively V
A=V
DATA, V
B=VDD.This moment V
C=0, OLED is not luminous.
Subordinate phase: the SCAN signal is in low level, the DATA signal after SELECT signal rising edge arrives, SCAN signal rising edge becomes low level by high level before arriving, the SELECT signal is in high level.The 4th transistor M4 is in conducting state under the effect of SCAN, the 3rd transistor M3 is in closed condition under the effect of SELECT.Because the 3rd transistor M3 is in closed condition, so memory capacitance CS right-hand member B point is equivalent to unsettled.When the DATA signal is in high level, V
B=VDD, V
C=0, OLED is not luminous.After the DATA signal became low level, because memory capacitance CS has been in vacant state, the voltage that B is ordered was owing to the decline of DATA signal level descends, V
B=VDD-V
DATA, the input end that is equivalent to phase inverter has been imported a low level, and then output terminal C point is in high level, and OLED is in luminance.
Phase III: the SCAN signal is in high level, and the DATA signal is in low level, and the SELECT signal is in high level.The 4th transistor M4 is in closed condition under the effect of SCAN, the 3rd transistor M3 is in closed condition under the effect of SELECT.This moment, the CS two ends all were in vacant state.The voltage that B is ordered still remains on VDD-V
DATA, the C point still is in high level, and OLED still is in luminance.
Close the scanning sequence of each signal as shown in Figure 4, the concrete course of work is as follows:
Phase one: the SCAN signal is in low level, and the DATA signal is in high level, and the SELECT signal is in low level.The 4th transistor M4 is in conducting state under the effect of SCAN, the 3rd transistor M3 is in conducting state under the effect of SELECT.The voltage at electric capacity two ends is respectively V
A=V
DATA, V
B=VDD.This moment V
C=0, OLED is not luminous.
Subordinate phase: the SCAN signal is in low level, and the DATA signal is in high level, and the SELECT signal is in high level.The 4th transistor M4 is in conducting state under the effect of SCAN, the 3rd transistor M3 is in closed condition under the effect of SELECT.The voltage at electric capacity two ends is respectively V
A=V
DATA, V
B=VDD.This moment V
C=0, OLED is not luminous.
Phase III: the SCAN signal is in high level, and the DATA signal is in low level, and the SELECT signal is in high level.The 4th transistor M4 is in closed condition under the effect of SCAN, the 3rd transistor M3 is in closed condition under the effect of SELECT.This moment, the CS two ends all were in suspended state.The voltage that B is ordered still remains on VDD, C point voltage V
C=0, OLED is not luminous.
Second optimal way of embodiment one:
Circuit structure is identical with first optimal way of embodiment one, and the scanning sequence of each signal is also identical, and it is lower than the amplitude that DATA signal in first optimal way is in high level that its difference is that DATA signal in second optimal way is in the amplitude of high level.In a subordinate phase of opening, the voltage that B is ordered is owing to the decline of DATA signal level descends, V
B=VDD-V
DATA, because V
DATADiminish, V
BBecome big, V
BCan only make the first transistor M1 conducting, transistor seconds M2 is turn-offed.
When OLED was luminous, establishing the electric current that flows through OLED was I
D, the electric current that flows through the first transistor M1 is I
M1, the electric current that flows through transistor seconds M2 is I
M2. then have:
(videing infra)
K wherein
P, V
GSM1, V
THM1, V
DSM1Be respectively the conduction factor of the first transistor M1, gate source voltage, threshold voltage, drain-source voltage; K
N, V
GSM2, V
THM2, V
DSM2Be respectively the conduction factor of transistor seconds M2, gate source voltage, threshold voltage, drain-source voltage.
When the electric current of nA level flows through OLED, V
DSBe μ V level.When if drift takes place in the threshold voltage of the first transistor M1, V
DSRemain μ V level, so the variation meeting of the drain voltage of the first transistor M1 (anode voltage of OLED) is less than 10
-6V, by the family curve of brightness-current-voltage of OLED as can be seen, so little change in voltage can be ignored to the influence of the electric current that flows through OLED.
It is pointed out that the metal-oxide-semiconductor field effect transistor that adopts among the embodiment one also can be changed to other transistor: polycrystalline SiTFT, metal oxide thin-film transistor, OTFT.
Embodiment two
With reference to pixel-driving circuit structural representation shown in Figure 5, the scanning sequence figure of each signal of unlatching field shown in Figure 6 and the scanning sequence figure that closes each signal shown in Figure 7.
Compare with embodiment one, the 4th transistor M4 becomes the NMOS field effect transistor by the PMOS field effect transistor in this circuit, so SCAN signal scanning sequential generation respective change.Circuit theory is identical with embodiment one.
The metal-oxide-semiconductor field effect transistor that adopts among the embodiment two also can be changed to other transistor: polycrystalline SiTFT, metal oxide thin-film transistor, OTFT.
Embodiment three
With reference to pixel-driving circuit structural representation shown in Figure 8, the scanning sequence figure of each signal of unlatching field shown in Figure 9 and the scanning sequence figure that closes each signal shown in Figure 10.
Compare with embodiment one, the 3rd transistor M3 becomes the NMOS field effect transistor by the PMOS field effect transistor in this circuit, so SELECT signal scanning sequential generation respective change.Circuit theory is identical with embodiment one.
The metal-oxide-semiconductor field effect transistor that adopts among the embodiment three also can be changed to other transistor: polycrystalline SiTFT, metal oxide thin-film transistor, OTFT.
Embodiment four
With reference to pixel-driving circuit structural representation shown in Figure 11, the scanning sequence figure of each signal of unlatching field shown in Figure 12 and the scanning sequence figure that closes each signal shown in Figure 13.
Compare with embodiment one, in this circuit the 4th transistor M4 by the PMOS field effect transistor become the NMOS field effect transistor, the 3rd transistor M3 becomes the NMOS field effect transistor by the PMOS field effect transistor, so SCAN signal, SELECT signal scanning sequential generation respective change.Circuit theory is identical with embodiment one.
The metal-oxide-semiconductor field effect transistor that adopts among the embodiment four also can be changed to other transistor: polycrystalline SiTFT, metal oxide thin-film transistor, OTFT.
Claims (3)
1.OLED image element driving method is characterized in that: the OLED luminescence unit is only changed under ON state and OFF state two states, and when the OLED luminescence unit was in ON state, the electric current that flows through this OLED luminescence unit was constant; Gray scale adjusting to the OLED luminescence unit realizes by controlling this OLED luminescence unit ON state fluorescent lifetime.
2. the OLED pixel-driving circuit that is used for claim 1 method, it is characterized in that, comprise: the first transistor (M1), transistor seconds (M2), the 3rd transistor (M3), the 4th transistor (M4), memory capacitance (CS) and OLED luminescence unit, the first transistor wherein (M1) is the P transistor npn npn, transistor seconds (M2) is the N-type transistor, described the first transistor (M1) constitutes phase inverter with transistor seconds (M2), and the 3rd transistor (M3) and the 4th transistor (M4) constitute the switch of OLED pixel-driving circuit; The source electrode of the source electrode of the first transistor (M1) and the 3rd transistor (M3) links to each other with external power source simultaneously, the drain electrode of the first transistor (M1) links to each other with the anode of OLED luminescence unit and the drain electrode of transistor seconds (M2) simultaneously, the source ground of the negative electrode of OLED luminescence unit and transistor seconds (M2), the drain electrode of the 3rd transistor (M3), the grid of the grid of the first transistor (M1) and transistor seconds (M2) links to each other with first end of memory capacitance (CS) simultaneously, second end of memory capacitance (CS) links to each other with the drain electrode of the 4th transistor (M4), the grid of the 3rd transistor (M3) links to each other with the SELECT signal wire, the source electrode of the 4th transistor (M4) links to each other with the DATA signal wire, and the grid of the 4th transistor (M4) links to each other with the SCAN signal wire.
3. OLED pixel-driving circuit as claimed in claim 2, it is characterized in that: described the first transistor (M1), transistor seconds (M2), the 3rd crystal (M3) and the 4th transistor (M4) are selected from any one in metal-oxide-semiconductor field effect transistor, polycrystalline SiTFT, metal oxide thin-film transistor, the OTFT respectively.
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Cited By (4)
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| CN104900194A (en) * | 2015-07-09 | 2015-09-09 | 京东方科技集团股份有限公司 | Pixel circuit, drive method and display device |
| CN107230449A (en) * | 2017-07-12 | 2017-10-03 | 京东方科技集团股份有限公司 | Pixel unit circuit, driving method, image element circuit and display device |
| CN108735147A (en) * | 2018-04-09 | 2018-11-02 | 友达光电股份有限公司 | Display array and display device |
| CN109785795A (en) * | 2019-03-11 | 2019-05-21 | 中国计量大学 | A kind of silicon substrate OLED micro-display device driving circuit using LDD structure |
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| CN109785795A (en) * | 2019-03-11 | 2019-05-21 | 中国计量大学 | A kind of silicon substrate OLED micro-display device driving circuit using LDD structure |
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