CN103294094B - Charge-pump device and driving force method of adjustment thereof - Google Patents
Charge-pump device and driving force method of adjustment thereof Download PDFInfo
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Abstract
The present invention discloses a kind of charge-pump device, includes a driving stage, is used for producing the drive singal corresponding to a driving force; One charge pump circuit, is used for, according to this drive singal, producing an output voltage; One comparator circuit, it comprises the first comparer, and this first comparer is used for comparing this output voltage and one first reference voltage, produces one first comparison signal; One overload circuit for detecting, is used for according to one at least in the middle of this first comparison signal and this output voltage, to produce a detecting result; And a driving force control circuit, be coupled between this overload circuit for detecting and this driving stage, be used for, according to this detecting result, controlling this driving force corresponding to this drive singal.
Description
Technical field
The present invention relates to a kind of charge-pump device and driving force method of adjustment thereof, espespecially one can export driving force according to load state modulation, and takes into account charge-pump device and the driving force method of adjustment thereof of the usefulness of output ripple and confession loading capability simultaneously.
Background technology
In general, a charge pump (chargepump) can be used to provide regulated output voltage to different loads, and the known control mode to charge pump has two kinds, is respectively and controls with operational amplifier and with comparer.Under the framework carrying out controlling with operational amplifier, output voltage has less output ripple, but has the consideration of degree of stability under different loads and external module; And under the framework carrying out controlling with comparer, although there is no stability problem, have output voltage to have larger periodicity output ripple, and audio-frequency noise may be produced under some load.
For example, please refer to Figure 1A, Figure 1A is the schematic diagram of a known charge-pump device 10.Charge-pump device 10 is the frameworks controlled with operational amplifier (operationalamplifier), includes charge pump circuit 102, operational amplifier 104, adjustment transistor 106 and a driving stage 108.In simple terms, the drive singal DRVP that charge pump circuit 102 can produce according to driving stage 108, produces an output voltage VGH.For example charge pump circuit 102 can be the gloomy charge pump of a Dick, it is when drive singal DRVP is low level, one input voltage AVDD can charge to the electric capacity that goes at express speed (flyingcapacitor) CF1, CF2, making at drive singal DRVP is that high levle is and lifting is gone at express speed during electric capacity CF1, CF2 current potential, the electric charge gone at express speed stored by electric capacity CF1, CF2 can transfer to an output capacitance CS1, with by output voltage VGH help Pu to wish level.
Producing in the drive singal DRVP carrying out controlling, output voltage VGH dividing potential drop can be given operational amplifier 104 to produce a feedback voltage FBP by divider resistance R1, R2.Operational amplifier 104 can compare a feedback voltage FBP and reference voltage VREF and adjust to provide an output signal OP_OUT to give adjustment transistor 106, namely when output voltage VGH is higher, feedback voltage FBP is also higher, and draw high output signal OP_OUT, make the electric conduction resistive large (gate voltage is higher) adjusting transistor 106; When output voltage VGH is lower, feedback voltage FBP is also lower, and drags down output signal OP_OUT, makes the conducting resistance adjusting transistor 106 diminish (namely gate voltage is lower).Then, driving stage 108 produces drive singal DRVP according to adjustment transistor 106 and a frequency signal CLK, produces desired output voltage VGH to control charge pump circuit 102.
Specifically, please refer to Figure 1B, Figure 1B is the signal schematic representation of the charge-pump device 10 shown in Figure 1A.As shown in Figure 1B, because produced drive singal DRVP is constantly toggled to high levle when the high levle of frequency signal CLK by driving stage 108, and the conducting resistance of adjustment transistor 106 can adjust because of output voltage VGH, therefore the charging current of the output voltage VGH of last charge pump circuit 102 couples of output capacitance CS1 is to the discharge current equaling external load.Because the ripple size of output voltage VGH is proportional to charging and discharging currents, therefore there is less output ripple (less under the framework that the high levle of the drive singal DRVP of the framework that operational amplifier controls controls compared with comparer, the explanation after a while of this part).
But, because the framework of charge-pump device 10 has a limit 1/ (the external load value of 2 π * CS1*) in output, therefore can change this limit when the external load of difference and output capacitance CS1, thus have the consideration of degree of stability.
On the other hand, please refer to Fig. 2 A, Fig. 2 A is the schematic diagram of a known charge-pump device 20.Charge-pump device 20 similar to charge-pump device 10 part, therefore the similar person of the effect of assembly and signal represents with same-sign.Charge-pump device 20 is the frameworks controlled with comparer, include charge pump circuit 102, comparator circuit 204, driving stage 206 and divider resistance R1, a R2, and comparator circuit 204 includes a comparer 208, flip-flop (flip-flop) 210 and a Sheffer stroke gate (NANDgate) 212.In simple terms, the drive singal DRVP that charge pump circuit 102 can produce according to driving stage 206, by output voltage VGH help Pu to institute wish level running similar to above-mentioned, do not repeat them here.
Producing in the drive singal DRVP carrying out controlling, output voltage VGH dividing potential drop can be given comparer 208 to produce feedback voltage FBP by divider resistance R1, R2.Comparer 208 can compare feedback voltage FBP and reference voltage VREF to provide a comparison output signal COMP_OUT, flip-flop 210 can trigger at the upper limb of frequency signal CLK and export the voltage quasi position of comparison output signal COMP_OUT at that time, compare sampled signal COMP_SAM to provide one (namely to compare sampled signal COMP_SAM and maintain identical level within a cycle of frequency signal CLK, being different from comparison output signal COMP_OUT may have level to change by outside noise or interference), and Sheffer stroke gate 212 can produce a compare result signal COMP_SIG and gives driving stage 206 according to comparing sampled signal COMP_SAM and frequency signal CLK, make driving stage 206 can produce drive singal DRVP according to this, desired output voltage VGH is produced to control charge pump circuit 102.
Specifically, please refer to Fig. 2 B, Fig. 2 B is the signal schematic representation of charge-pump device 20 shown in Fig. 2 A.As shown in Figure 2 B, after output voltage VGH is lower than a target voltage (namely feedback voltage FBP is less than reference voltage VREF), relatively sampled signal COMP_SAM starts at a upper limb of frequency signal CLK the high levle exporting one-period, when relatively sampled signal COMP_SAM and frequency signal CLK is high levle (compare result signal COMP_SIG is low level), drive singal DRVP is that high levle constantly charges to output voltage VGH to control charge pump circuit 102.Then, after output voltage VGH is higher than target voltage, relatively sampled signal COMP_SAM starts at another upper limb of frequency signal CLK the low level exporting one-period, drive singal DRVP is made to maintain low level and not charge to output voltage VGH, now the output voltage VGH of output capacitance CS1 can because reducing, until repeat above-mentioned behavior again lower than after target voltage external load supplying gradually.In this case, because charge-pump device 20 only compares feedback voltage FBP and reference voltage VREF, so there is no stability problem.
On the other hand, all drive singal DRVP is toggled to high levle compared to charge-pump device 10 when the high levle of frequency signal CLK, charge-pump device 20 is only all that drive singal DRVP is just toggled to high levle (or not when beating during drive singal DRVP) by high levle at relatively sampled signal COMP_SAM and frequency signal CLK, the electric current of each discharge and recharge can be greater than average current (i.e. load current), therefore during stable state the mean charging current of the output voltage VGH of charge pump circuit 102 couples of output capacitance CS1 to the discharge current equaling external load, so that output voltage VGH is maintained a target voltage.
Specifically, level height when drive singal DRVP is high levle is relevant with drive singal DRVP driving force.If comparator architecture, then the transistor of driving stage 206 can be opened with all strength, therefore level when drive singal DRVP is high levle can be higher; If operational amplifier framework, then the output signal OP_OUT of operational amplifier 104 can adjust the fan-out capability of driving stage 108 by adjustment transistor 106, therefore level when drive singal DRVP is high levle can be lower.It is that the number of times of high levle and amplitude determine that charge pump circuit 102 provides the size of load energy to be triggered by drive singal DRVP, under different loads, comparator architecture modulation be trigger as the number of times of high levle, operational amplifier framework framework modulation be trigger the amplitude for high levle.
When system is in stable state, the charging current of charge pump circuit 102 couples of output voltage VGH must equal load current, and such output voltage VGH could stablize.Because the drive singal DRVP of operational amplifier framework beats always, therefore the charging current of charge pump circuit 102 couples of output voltage VGH just equals load current; And the drive singal DRVP of comparator architecture once beats and do not beat, therefore the charged electrical of charge pump circuit 102 couples of output voltage VGH fails to be convened for lack of a quorum and is greater than load current.Output ripple size is proportional to charging and discharging currents again, therefore the larger comparator architecture of charging current causes output voltage VGH to have larger periodicity output ripple.
In the case, although do not have stability problem with the charge-pump device 20 that comparer controls, it has larger output ripple, reduces the driving force of drive singal DRVP to reduce output ripple if pass through, it also can be able to decline for loading capability, likely cannot suitably for carrying.In view of this, real necessity having improvement of known technology.
Summary of the invention
The disclosure provides one can export driving force according to load state modulation, and takes into account charge-pump device and the driving force method of adjustment thereof of the usefulness of output ripple and confession loading capability simultaneously.
According to one side of the present disclosure, provide a kind of charge-pump device, include a driving stage, be used for producing the drive singal corresponding to a driving force; One charge pump circuit, is used for, according to this drive singal, producing an output voltage; One comparator circuit, it comprises the first comparer, and this first comparer is used for comparing this output voltage and one first reference voltage, produces one first comparison signal; One overload circuit for detecting, is used for according to one at least in the middle of this first comparison signal and this output voltage, to produce a detecting result; And a driving force control circuit, be coupled between this overload circuit for detecting and this driving stage, be used for, according to this detecting result, controlling this driving force corresponding to this drive singal.
According to another aspect of the present disclosure, provide a kind of charge-pump device, include a driving stage, it has a control input end, and drives input end and a drive output; One charge pump circuit. it has this drive output that an input end is coupled to this driving stage, and an output terminal; One comparator circuit, it comprises the first comparer, and it has this output terminal that an input end is coupled to this charge pump circuit, and an output terminal is coupled to this driving input end of this driving stage; One overload circuit for detecting, it has at least one detecting input end, is coupled to the one in the middle of this output terminal of this comparator circuit and this output terminal of this charge pump circuit, and one or more detecting output terminal; And a driving force control circuit, be coupled to this overload circuit for detecting this one or more between detecting output terminal and this control input end of this driving stage.
According to another aspect more of the present disclosure, provide a kind of driving force method of adjustment, in a charge-pump device.This driving force method of adjustment is included between a starting period, and whether this driving force control circuit reaches according to an output voltage of this charge-pump device sets a driving force to drive this charge-pump device in a target voltage; And between this starting period after one operation during in, repeat following step: whether (i) does not maintain this target voltage to set this driving force according to this output voltage, and whether (ii) has reached at this target voltage according to this output voltage to set this driving force.
According to more another aspect of the present disclosure, a kind of driving force method of adjustment is provided, for in a charge-pump device, this driving force method of adjustment comprises (i) when an output voltage does not maintain a target voltage, carries out driving to produce this output voltage with a specific driving force; And (ii) is when this output voltage arrives this target voltage, has not previously maintained the number of times of this target voltage according to this output voltage, with to should a driving force of number of times drive to produce this output voltage.
Coordinate following schemes, the detailed description of embodiment and claims at this, by address after other object of the present invention and advantage be specified in.
Accompanying drawing explanation
Figure 1A is the schematic diagram of a known charge-pump device.
Figure 1B is the signal schematic representation of the charge-pump device shown in Figure 1A.
Fig. 2 A is the schematic diagram of another charge-pump device known.
Fig. 2 B is the signal schematic representation of charge-pump device shown in Fig. 2 A.
Fig. 3 A is the schematic diagram of the embodiment of the present invention one charge-pump device.
Fig. 3 B is the schematic diagram of the embodiment of the present invention one driving force adjustment flow process.
Fig. 4 A to Fig. 4 D is respectively the schematic diagram of the charge-pump device for realizing the charge-pump device shown in Fig. 3 A.
Wherein, description of reference numerals is as follows:
10,20,30,40,42,44,46 charge-pump device
102,304 charge pump circuit
104 operational amplifiers
106 adjustment transistors
108,206,302 driving stages
204,306 comparator circuits
208,408 comparers
210, DFF1 ~ DFF5,406,420 flip-flops
212,422 Sheffer stroke gates
308 overload circuit for detecting
310 driving force control circuits
320 flow processs
321 ~ 327 steps
402 overload detecting units
404 accurate switch units
410,412 timers
414 multistage driving force control modules
416 control output unit
418 counters
DRVP, DRVP ' drive singal
VGH, VGH ' output voltage
AVDD input voltage
CF1, CF2, CS1 electric capacity
R1, R2 resistance
FBP, FBP ' feedback voltage
VREF, VREF1, VREF2 reference voltage
OP_OUT outputs signal
CLK frequency signal
COMP_OUT, COMP_OUT ' comparison output signal
COMP_SAM, COMP_SAM ' compare sampled signal
COMP_SIG, COMP_SIG ' compare result signal
DET detects result
D data input pin
CK frequency end
Q, QB output terminal
RST resets end
DET_SIG detection signal
HLD
CON1, CON2 control signal
OR1, OR2 or door
Embodiment
In the charge-pump device and driving force method of adjustment thereof of exemplary embodiment of the present invention, whether the output voltage by detecting charge pump circuit maintains a target voltage and does not maintain the number of times of this target voltage, adjust the driving force of driving stage accordingly, and then the output voltage with the minimum ripple that can maintain load can be exported.For more clearly understanding the present invention, below will coordinate graphic, elaborating with at least one exemplary embodiment.In exemplary embodiment of the present invention, the connection term mentioned such as: couple or connection etc., is only that the annexation being not used for limiting in fact between two assemblies directly couples or indirectly couples with reference to annexed drawings in order to illustrate.
Please refer to Fig. 3 A, Fig. 3 A is the schematic diagram of a charge pump (chargepump) device 30 of the embodiment of the present invention.As shown in Figure 3A, charge-pump device 30 includes driving stage 302, charge pump circuit 304, comparator circuit 306, overload circuit for detecting 308 and a driving force control circuit 310.
In simple terms, driving stage 302 has a control input end, and drives input end and a drive output, can produce the drive singal DRVP ' corresponding to a driving force.Charge pump circuit 304 has this drive output that an input end is coupled to driving stage 302, and an output terminal, according to drive singal DRVP ', can produce an output voltage VGH '.Comparator circuit 306 comprises a comparer 312, it has this output terminal that an input end is coupled to charge pump circuit 304, and one output terminal be coupled to this driving input end of driving stage 302, comparer 312 can compare an output voltage VGH ' and reference voltage VREF1, produces a comparison signal COMP_OUT '.
Overload circuit for detecting 308 has at least one detecting input end, be coupled to one in the middle of this output terminal of comparator circuit 306 and this output terminal of charge pump circuit 304 (example as shown in FIG., one in the middle of this at least one detecting input end is directly coupled to this output terminal of comparer 312), and there is one or more detecting output terminal, can according to the central one at least of comparison signal COMP_OUT ' and output voltage VGH ', to produce a detecting result DET.
Driving force control circuit 310 be coupled to overload circuit for detecting 308 this one or more between detecting output terminal and this control input end of driving stage 302, according to detecting result DET, this driving force that drive singal DRVP ' is corresponding can be controlled.Generally speaking, driving force control circuit 310 adjustable drive singal DRVP ' driving charge pump circuit 304 carry out continuously charging number of times, the size of transistor producing drive singal DRVP ', in the middle of the number producing the transistor of drive singal DRVP ' in parallel one at least to adjust this corresponding driving force of drive singal DRVP '.
Under above-mentioned configuration, charge-pump device 30 can according to output voltage VGH ' generation detecting result DET, then this corresponding driving force of drive singal DRVP ' is controlled according to this, therefore can take into account output ripple and for the usefulness of loading capability, and carry out control with comparer and so there is no stability problem.
Specifically, detecting result DET relates to and shows whether output voltage VGH ' reaches in a target voltage, and whether output voltage VGH ' does not maintain this target voltage.When detecting result DET and indicating output voltage VGH ' not maintain this target voltage, this represents current driving force and is not enough to supply current load, and output voltage VGH ' cannot reach this target voltage or too much lower than this target voltage for a long time.Therefore, this corresponding for drive singal DRVP ' driving force is increased to a specific driving force for example for driving stage 302 can provide the strongest driving force in the middle of multiple driving force, fast this target voltage is returned in output voltage VGH ' lifting by driving force control circuit 310.
Then, when driving force control circuit 310 set this driving force as this certain capabilities drive and after making output voltage VGH ' arrive this target voltage, this driving force can reduce by driving force control circuit 310 again, and this driving force through reducing decides according to the number of times previously not maintaining this target voltage, wherein, if output voltage VGH ' does not maintain the number of times of this target voltage the more, this driving force is stronger.
About the Detailed Operation of the charge-pump device of Fig. 3 A, as shown in Figure 3 B, a driving force adjustment flow process 320 of its display one embodiment of the invention, comprises the following steps:
Step 321: start.
Step 322: within a starting period, is first set as a startup driving force by a driving force.
Step 323: within this starting period, when output voltage VGH ' reaches this target voltage, reduces this driving force.
Step 324: judge whether output voltage VGH ' does not maintain this target voltage.If so, then carry out step 325; If not, then carry out step 327.
Step 325: if when output voltage VGH ' does not maintain this target voltage, is set as a specific driving force by this driving force.
Step 326: after making output voltage VGH ' reach this target voltage after driving with this specific driving force, this driving force is reduced to also lower than this specific driving force.
Step 327: if when output voltage VGH ' maintains this target voltage, this driving force is maintained current driving force.
Driving force adjustment flow process 320 can divide between the starting period with operation during.In simple terms, between the starting period, whether driving force control circuit 310 reaches in a target voltage to set this driving force to drive this charge-pump device (step 322,323) according to the output voltage VGH ' of a charge-pump device.Then, in during an operation after between this starting period, repeat following step: whether (i) does not maintain this target voltage to set this driving force (step 324,325,327) according to this output voltage, and whether (ii) has reached in this target voltage to set this driving force (step 326) according to this output voltage.
Specifically, within this starting period, first this driving force is set as a startup driving force (such as the strongest driving force in the middle of multiple driving force) (step 322), then, when output voltage VGH ' reaches this target voltage, this driving force is reduced (such as the most weak driving force be reduced in the middle of the plurality of ability) (step 323).
Then, during operation, first judge whether output voltage VGH ' does not maintain this target voltage (step 324).If output voltage VGH ' does not maintain this target voltage, then this driving force is set as a specific driving force, such as the strongest driving force (step 325) in the middle of multiple driving force.Then, after making output voltage VGH ' reach this target voltage after driving with this specific driving force, this driving force than this specific driving force also low (step 326) is reduced to.The previous number of times not maintained this target voltage of this driving force wherein through reducing better foundation output voltage VGH ' resets this driving force and decides, when output voltage VGH ' does not maintain the number of times of this target voltage the more, this driving force can be set as stronger.For example, when the number of times that output voltage VGH ' does not maintain this target voltage is one time, this driving force is set as the once weak driving force in the middle of the plurality of driving force, its this most weak driving force comparatively initial is strong.The rest may be inferred for other number of times.On the other hand, if output voltage VGH ' maintains this target voltage, this driving force is maintained current driving force, namely driving force has been adjusted to and just can have maintained now load (step 327).
Comprehensively above-mentioned, when charge-pump device 30 comes into operation, that is within the starting period, driving force control circuit 310 first sets this driving force as this startup driving force, the strongest driving force for example in the middle of multiple driving force, and make output voltage VGH ' arrive this target voltage.Then, the number of times not maintaining this target voltage due to now output voltage VGH ' is zero degree, and therefore this driving force is reduced to driving stage 302 and can provides the most weak driving force in the middle of multiple driving force by driving force control circuit 310.Again then, during operation, if output voltage VGH ' cannot be maintained this target voltage by this most weak driving force, driving force control circuit 310 can reset this driving force for this certain capabilities drive and make output voltage VGH ' arrive this target voltage.Again then, the number of times not maintaining this target voltage due to now output voltage VGH ' is for once, and therefore this driving force is reduced to driving stage 302 and can provides once weak driving force in the middle of multiple driving force by driving force control circuit 310.The rest may be inferred, and when finally arriving balance, the driving force that driving force control circuit 310 just can set maintains output voltage VGH '.Thus, the exportable output voltage VGH ' with the minimum ripple that can maintain now load of charge-pump device 30.
About the thin portion structure of each built-up circuit of charge-pump device 30, please refer to the schematic diagram that Fig. 4 A and Fig. 4 B, Fig. 4 A and Fig. 4 B is respectively the thin portion circuit of the charge-pump device 40,42 of the charge-pump device 30 according to Fig. 3 A of different embodiment.As shown in figure 4, the circuit for detecting 308 that transships comprises an overload detecting unit 402 and an accurate switch unit 404.Overload detecting unit 402 has a first input end, is coupled to this output terminal (output voltage VGH ' produces a feedback voltage FBP ' through divider resistance R1, R2 as shown in Figure 2 A) of charge pump circuit, and one first detecting output terminal.Overload detecting unit 402 is configured and judges whether output voltage VGH ' does not maintain this target voltage according to output voltage VGH ', and produces an overload signal HLD at this first detecting output terminal.Position accurate switch unit 404 is configured to the particular edge detecting comparison signal COMP_OUT ', to switch detection signal DET_SIG to one first state (high levle), and be one second state according to overload signal HLD to switch detection signal DET_SIG.In other words, in this embodiment, the detecting result DET that overload circuit for detecting 308 provides comprises detection signal DET_SIG.
About the thin portion structure that overload detecting unit 402 is respective with the accurate switch unit in position 404, for example, as shown in Figure 4 A, overload detecting unit 402 cocoa comprises a low-pass filter and a comparer 408.Comparer 408 has two input ends, and central one is as this first input end of overload detecting unit 402, and another one is coupled to a reference voltage VREF2 low compared with reference voltage VREF1, and has an output terminal as the first detecting output terminal.Therefore comparer 408 can (low-pass filter compares giving comparer 408 after the dividing potential drop feedback voltage FBP ' low-pass filtering of output voltage VGH ' with reference voltage VREF2 according to output voltage VGH ', to reduce noise), produce a comparison signal as overload signal HLD.In other words, whether comparer 408 is too much lower than this target voltage according to output voltage VGH ', produces the instruction of this comparison signal and indicates output voltage VGH ' whether not maintain this target voltage as overload signal HLD.On the other hand, the accurate switch unit 404 in position can comprise a flip-flop 406, it has a frequency input, be coupled to this output terminal (comparison signal COMP_OUT ') of comparator circuit 306, one resets end, and be coupled to this first detecting output terminal to receive overload signal HLD, it is accurate that a data input pin is coupled to a fixed bit, and a data output end, as one second detecting output terminal of overload circuit for detecting 308 to produce detection signal DET_SIG.
Under this arrangement, when the particular edge of detecting comparison signal COMP_OUT ' is turned low (namely output voltage VGH ' reaches this target voltage) by height, detection signal DET_SIG can switch to high levle.Then, when according to output voltage VGH ', overload detecting unit 402 judges that output voltage VGH ' does not maintain this target voltage, overload signal HLD can switch to high levle and resets (one of flip-flop 406 resets end RST and resets when high levle) flip-flop 406, makes detection signal DET_SIG can switch to low level.Thus, detection signal DET_SIG is that high levle can indicate output voltage VGH ' to maintain this target voltage.In addition, the number of times that detection signal DET_SIG switches to low level by high levle also can indicate output voltage VGH ' not maintain the number of times of this target voltage.
It should be noted that Fig. 4 A only illustrates an embodiment of overload detecting unit 402 and the accurate switch unit 404 in position.In other embodiments, the for example embodiment shown in 4B figure, this first input end of overload detecting unit 402 also can change the output terminal being coupled to comparator circuit 306 into, then judge whether output voltage VGH ' does not maintain this target voltage according to a comparison signal COMP_OUT ', and produce an overload signal HLD at the first detecting output terminal.In addition, detecting result DET not only comprises detection signal DET_SIG, and can more comprise overload signal HLD.In other words, detection signal DET_SIG is provided to driving force control circuit 310, to judge whether output voltage VGH ' arrives target voltage, and overload signal HLD is also provided to driving force control circuit 310, to judge whether output voltage VGH ' does not maintain this target voltage.
In addition, about the thin portion structure of overload detecting unit 402, in the embodiment shown in 4B figure, overload detecting unit 402 can comprise a timer 412, it has an input end this output terminal at this comparer 312, one output terminal is as this first detecting output terminal, and therefore timer 412 can be detected comparison signal COMP_OUT ' and whether maintains a certain bits standard (high levels) and reach a given time to produce overload signal HLD.In other words, whether timer 412 can maintain the high levels time (namely output voltage VGH ' cannot reach this target voltage for a long time) excessively of a specified duration according to comparison signal COMP_OUT ', produces overload signal HLD and indicates output voltage VGH ' whether not maintain this target voltage.
Therefore, under this arrangement, when the particular edge of detecting comparison signal COMP_OUT ' is turned low (namely output voltage VGH ' reaches this target voltage) by height, detection signal DET_SIG can switch to high levle.Then, when according to comparison signal COMP_OUT ', overload detecting unit 402 judges that output voltage VGH ' does not maintain this target voltage, overload signal HLD can switch to high levle and resets (one of flip-flop 406 resets end RST and resets when high levle) flip-flop 406, makes detection signal DET_SIG can switch to low level.Thus, detection signal DET_SIG is that high levle can indicate output voltage VGH ' to maintain this target voltage, and the number of times that overload signal HLD switches to high levle can indicate output voltage VGH ' not maintain the number of times of this target voltage.Other operation of the accurate switch unit 404 of overload detecting unit 402 shown in 4B figure and position is schemed similar to 4A, with reference to describing above, can not repeat them here.
Continue with reference to 4C figure to Fig. 4 D, it is respectively the schematic diagram of the charge-pump device 44,46 of the alternate embodiment of charge-pump device 40,42 shown in Fig. 4 A and Fig. 4 B.Overload signal HLD shown in 4C figure also exports driving force control circuit 310 to and controls, and is not limited to control to driving force control circuit 310 as 4A figure only exports detection signal DET_SIG.In other words, 4C figure is with place like Fig. 4 category-B, and result DET is except comprising detection signal DET_SIG in detecting, more comprises overload signal HLD.
In addition, in the embodiment shown in 4C figure, compared to Fig. 4 A, overload detecting unit 402 also can comprise a timer 410, it has an input end this output terminal at comparer 408, one output terminal is as this first detecting output terminal, and therefore timer 410 can be detected this comparison signal that comparer 408 produces and whether maintains a certain bits standard and reach a given time to produce overload signal HLD.In this case, timer 410 can guarantee that overload signal HLD transition is because output voltage VGH ' is really too much lower than this target voltage, but not by noise.In addition, it should be noted that, because timer 410 can reduce noise, and the low-pass filter that comparer 408 is made up of resistance and electric capacity above also can reduce noise, in other embodiments the also low-pass filter that is made up of resistance and electric capacity above of removable comparer 408.
It should be noted that in other embodiments, the overload signal HLD shown in 4B figure also can not export driving force control circuit 310 to and control.Namely Fig. 4 D shows this kind of embodiment, and namely the Main Differences of Fig. 4 D and Fig. 4 B is that the former overload signal HLD does not export driving force control circuit 310 to.In other words, 4D figure only comprises detection signal DET_SIG with the common trait of Fig. 4 A for detecting result DET.Therefore, driving force control circuit 310 uses detection signal DET_SIG to judge whether output voltage VGH ' arrives target voltage, and more judges whether output voltage VGH ' does not maintain this target voltage.
On the other hand, please continue to refer to 4A figure to Fig. 4 D, to understand, comparator circuit 306, driving force control circuit 310, and the operation of driving stage 302.About comparator circuit 306, the comparator circuit 306 shown in 4A figure to Fig. 4 D can have the structure similar to the comparator circuit 204 shown in Fig. 2 A.Namely comparator circuit 306 also comprises a flip-flop 420 and a Sheffer stroke gate (NANDgate) 422.Flip-flop 420 includes that a data input pin D is coupled to this output terminal of comparer 312, a frequency end CK is used for receiving frequency signals CLK and a data output end Q.Sheffer stroke gate 422 has data output end Q and the frequency signal CLK that two input ends are respectively coupled to flip-flop 420, and has an output and be coupled to driving stage 302.Under such configuration, flip-flop 420 can trigger at the upper limb of frequency signal CLK and export the voltage quasi position of comparison signal COMP_OUT ' at that time, compare sampled signal COMP_SAM ' to provide one (namely to compare sampled signal COMP_SAM ' and maintain identical level within a cycle of frequency signal CLK, the comparison signal COMP_OUT ' that do not coexist may have level to change by outside noise or interference), and Sheffer stroke gate 422 can produce a compare result signal COMP_SIG ' and gives driving stage 302 according to comparing sampled signal COMP_SAM ' and frequency signal CLK.
On the other hand, driving force control circuit 310 can include a multistage driving force control module 414 and and control output unit 416.Multistage driving force control module 414 according to a control inputs signal, can produce a control signal CON1, corresponding to driving stage 302 certain one in the middle of multiple driving force is provided.As previously mentioned, this control inputs signal can be detection signal DET_SIG (as 4A figure and Fig. 4 D), or overload signal HLD (as 4B figure and Fig. 4 C).Controlling output unit 416 can according to detection signal DET_SIG and control signal CON1, produce a control signal CON2, to control the corresponding driving force of drive singal DRVP ' for this certain driving force or a specific driving force (i.e. the driving force that adjusts of the aforementioned number of times not maintaining this target voltage according to output voltage VGH ' or the strongest driving force).
About multistage driving force control module 414 and control output unit 416 other thin portion structure each, for example, in the embodiment shown in Fig. 4 A to Fig. 4 D, multistage driving force control module 414 has a counter 418, it has this first or second detecting output terminal that an input end is coupled to overload circuit for detecting 308, and multiple output terminal, therefore counter 418 can calculate this control inputs signal (namely receive overload signal HLD by this first detecting output terminal or receive detection signal DET_SIG by this second detecting output terminal) and transferred to the transition number of times of one first state by one second state to produce control signal CON1.On the other hand, control output unit 416 comprise multiple or door (such as or door OR1, OR2), central each has this second detecting output terminal that an input end is coupled to overload circuit for detecting 308 respectively, another input end is coupled to the one in the middle of the plurality of output terminal of counter 418, and one output terminal be coupled to driving stage 302, therefore there is an input end in the middle of the plurality of or door each and be coupled to detection signal DET_SIG (this second detecting output terminal) respectively, another input end is coupled to a part of signal of control signal CON1, and one output terminal be coupled to driving stage 302 to export operation result.
Under this arrangement, when detection signal DET_SIG be low level instruction output voltage VGH ' do not maintain this target voltage time (as just start shooting or overload signal HLD resets flip-flop 406 time), detection signal DET_SIG exports high levle signal through a phase inverter makes the plurality of or door all export the control signal CON2 of high levle, and therefore output voltage VGH ' lifting can be returned this target voltage with the strongest driving force elder generation is quick by driving stage 302 according to this.Then, when comparison signal COMP_OUT ' switches to low level, when making detection signal DET_SIG switch to high levle to indicate output voltage VGH ' to arrive this target voltage, detection signal DET_SIG exports low level signal through this phase inverter makes the plurality of or door produce control signal CON2 according to control signal CON1.The number of times (i.e. the transition number of times of overload signal HLD or detection signal DET_SIG) that control signal CON1 can not maintain this target voltage according to output voltage VGH ' produces (such as during signal transition, can trigger flip-flop frequency end to change flip-flop Output rusults as control signal CON1.
For example, counter 418 can include flip-flop DFF3 ~ DFF5, and after first time transition, the control signal CON1 that flip-flop DFF4, DFF5 export is (0,0); After second time transition, the control signal CON1 that flip-flop DFF4, DFF5 export is (0,1); After 4th transition, the control signal CON1 that flip-flop DFF4, DFF5 export is (1,0); After 6th transition, the control signal CON1 that flip-flop DFF4, DFF5 export is (1,1)).Result, driving stage 302 can not maintain the number of times of this target voltage according to output voltage VGH ', the driving force controlling drive singal DRVP ' corresponding is this certain driving force, and the number of times ought not maintaining this target voltage the more, and this certain driving force is stronger.
Under above-mentioned configuration, the number of times of compare result signal COMP_SIG ' to driving stage 302 is exported continuously by control signal CON2 adjustment, adjustable drive singal DRVP ' driving charge pump circuit 304 carries out the number of times charged continuously, to adjust this corresponding driving force of drive singal DRVP '; Or, continuous output compare result signal COMP_SIG ' remains identical to the number of times of driving stage 302, but control signal CON2 adjusts in driving stage 302 size or the number producing the transistor of drive singal DRVP ' in parallel that produce the transistor of drive singal DRVP ', with to adjust this corresponding driving force of drive singal DRVP '.
It should be noted that, in the embodiment of Fig. 4 A to Fig. 4 D, one in the middle of this at least one detecting input end of overload circuit for detecting 308 is coupled to this data output end of flip-flop 420, detect to receive more stable comparison sampled signal COMP_SAM ', but also can be coupled to this output terminal of comparer 312 in other embodiments, direct reception comparison signal COMP_OUT ' detects, and only comparison signal COMP_OUT ' easily may change because of noise and affect detecting result DET.
It should be noted that, the main spirits of the above embodiment of the present invention is that overload circuit for detecting 308 can detect comparison signal COMP_OUT ' or output voltage VGH ', output voltage VGH ' is indicated whether to maintain this target voltage and do not maintain the number of times of this target voltage to produce detecting result DET, and then export there is the output voltage VGH ' of the minimum ripple that can maintain now load, and carry out control with comparer and so there is no stability problem.Those of ordinary skill in the art when modifying according to this or change, and are not limited thereto.For example, 4A figure to Fig. 4 D illustrates counter 418 to be had two flip-flops and counts, and corresponding two or OR1, OR2 are to control this corresponding driving force of drive singal DRVP ', but also can be other quantity in other embodiments, and be not limited thereto.
In known technology, have a limit with the framework that operational amplifier controls in output, this limit can be changed when the external load of difference and output capacitance, thus have the consideration of degree of stability.Although and there is no stability problem with the charge-pump device that comparer controls, it has larger output ripple, if by reducing the driving force of drive singal to reduce output ripple, it also can be able to decline for loading capability, likely cannot suitably for year.In comparison, the overload circuit for detecting of the above embodiment of the present invention can detect comparison signal or output voltage, whether maintain this target voltage to produce detecting result instruction output voltage and do not maintain the number of times of this target voltage, and then export the output voltage VGH ' with the minimum ripple that can maintain now load, and carry out controlling therefore can improve degree of stability with comparer.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (23)
1. a charge-pump device, is characterized in that, includes:
One driving stage, is used for producing the drive singal corresponding to a driving force;
One charge pump circuit, is used for, according to this drive singal, producing an output voltage;
One comparator circuit, it comprises the first comparer, and this first comparer is used for comparing this output voltage and one first reference voltage, produces one first comparison signal;
One overload circuit for detecting, is used for according to one at least in the middle of this first comparison signal and this output voltage, to produce a detecting result; And
One driving force control circuit, is coupled between this overload circuit for detecting and this driving stage, is used for, according to this detecting result, controlling this driving force corresponding to this drive singal;
Wherein, whether this detecting result indicates this output voltage to reach in a target voltage, and whether this output voltage does not maintain this target voltage.
2. charge-pump device as claimed in claim 1, it is characterized in that, when this detecting result indicates this output voltage not maintain this target voltage, this driving force corresponding to this drive singal is increased to a specific driving force by this driving force control circuit.
3. charge-pump device as claimed in claim 2, it is characterized in that, this specific driving force is the strongest driving force in the middle of multiple driving force.
4. charge-pump device as claimed in claim 2, it is characterized in that, when this driving force control circuit set this driving force as this certain capabilities drive and after making this output voltage arrive this target voltage, this driving force reduces by this driving force control circuit again, and this driving force through reducing decides according to the number of times previously not maintaining this target voltage.
5. charge-pump device as claimed in claim 4, it is characterized in that, this output voltage does not maintain the number of times of this target voltage the more, and this driving force is stronger.
6. charge-pump device as claimed in claim 4, it is characterized in that, when this number of times is one time, this driving force is one first driving force in the middle of multiple driving force, and this first driving force is driving force only strong compared with the most weak driving force in the middle of the plurality of driving force.
7. charge-pump device as claimed in claim 1, it is characterized in that, this overload circuit for detecting comprises:
One overload detecting unit, according to this output voltage or this first comparison signal, it judges whether this output voltage does not maintain this target voltage, and produce an overload signal; And
An accurate switch unit, it detects the edge of this first comparison signal, to switch detection signal to one first state, and be one second state according to this overload signal to switch this detection signal, wherein this detecting result to comprise in the middle of this detection signal and this overload signal one at least.
8. charge-pump device as claimed in claim 7, it is characterized in that, this accurate switch unit comprises:
One flip-flop, it has a frequency input and is coupled to this first comparison signal, and one resets end is coupled to this overload signal, and it is accurate that a data input pin is coupled to a fixed bit, and a data output end is for generation of this detection signal.
9. charge-pump device as claimed in claim 7, it is characterized in that, this overload detecting unit comprises:
One second comparer, is used for according to this output voltage and one second reference voltage, produces one second comparison signal as this overload signal.
10. charge-pump device as claimed in claim 7, it is characterized in that, this overload detecting unit comprises:
One second comparer, is used for according to this output voltage and one second reference voltage, produces one second comparison signal; And
One timer, is used for detecting this second comparison signal and whether maintains a standard and reach a given time to produce this overload signal.
11. charge-pump device as claimed in claim 7, it is characterized in that, this overload detecting unit comprises:
One timer, is used for detecting this first comparison signal and whether maintains a standard and reach a given time to produce this overload signal.
12. charge-pump device as claimed in claim 7, it is characterized in that, this driving force control circuit comprises:
One multistage driving force control module, for according to a control inputs signal, produces one first control signal, and corresponding to certain one in the middle of multiple driving force, wherein this control inputs signal is the one in the middle of this detection signal and this overload signal; And
One controls output unit, and for according to this detection signal and this first control signal, generation one second control signal is specific driving force or the strongest driving force with the driving force controlled corresponding to this drive singal.
13. charge-pump device as claimed in claim 12, it is characterized in that, this multistage driving force control circuit comprises a counter, transfers the transition number of times of one first state to produce this first control signal in order to calculate this control inputs signal by one second state.
14. charge-pump device as claimed in claim 12, it is characterized in that, this control output unit comprises multiple or door, central each has an input end and is coupled to this detection signal respectively, another input end is coupled to a part of signal of this first control signal, and an output terminal is coupled to this driving stage.
15. charge-pump device as claimed in claim 1, it is characterized in that, this driving force control circuit to adjust in the middle of number of times that this drive singal drives this charge pump circuit to carry out continuously charging, the size of transistor producing this drive singal, the number producing the transistor of this drive singal in parallel one at least to adjust this driving force corresponding to this drive singal.
16. 1 kinds of charge-pump device, is characterized in that, include:
One driving stage, it has a control input end, and drives input end and a drive output;
One charge pump circuit. it has this drive output that an input end is coupled to this driving stage, and an output terminal;
One comparator circuit, it comprises one first comparer, and it has this output terminal that an input end is coupled to this charge pump circuit, and an output terminal is coupled to this driving input end of this driving stage;
One overload circuit for detecting, it has at least one detecting input end, is coupled to the one in the middle of this output terminal of this comparator circuit and this output terminal of this charge pump circuit, and one or more detecting output terminal; And
One driving force control circuit, be coupled to this overload circuit for detecting this one or more detecting output terminal and this control input end of this driving stage between;
Wherein, this comparator circuit also comprises:
One flip-flop, includes that a data input pin is coupled to this output terminal of this first comparer, a frequency end is used for reception one frequency signal and a data output end; And
One Sheffer stroke gate, has this data output end and this frequency signal that two input ends are respectively coupled to this flip-flop, and has an output and be coupled to this driving stage.
17. charge-pump device as claimed in claim 16, it is characterized in that, this overload circuit for detecting comprises:
One overload detecting unit, it has a first input end, is coupled to the one in the middle of this output terminal of this comparator circuit and this output terminal of this charge pump circuit, and one first detecting output terminal; And
An accurate switch unit, it comprises a flip-flop, and it has a frequency input, be coupled to this output terminal of this comparator circuit, one resets end, is coupled to this first detecting output terminal, and a data output end, as one second detecting output terminal of this overload circuit for detecting.
18. charge-pump device as claimed in claim 17, it is characterized in that, this overload detecting unit comprises:
One second comparer, it has two input ends, and central one is as this first input end of this overload detecting unit, and another one is coupled to a reference voltage, and have an output terminal couple or as this first detecting output terminal.
19. charge-pump device as claimed in claim 18, it is characterized in that, this overload detecting unit more comprises:
One timer, it has an input end this output terminal at this second comparer, and an output terminal is as this first detecting output terminal.
20. charge-pump device as claimed in claim 17, it is characterized in that, this overload detecting unit comprises:
One timer, it has an input end this output terminal at this first comparer, and an output terminal is as this first detecting output terminal.
21. charge-pump device as claimed in claim 17, it is characterized in that, this driving force control circuit comprises:
One multistage driving force control module, it has a counter, and it has this first or second detecting output terminal that an input end is coupled to this overload circuit for detecting, and multiple output terminal; And
One controls output unit, it comprises multiple or door, central each has: an input end is coupled to this second detecting output terminal of this overload circuit for detecting respectively, and another input end is coupled to the one in the middle of the plurality of output terminal of this counter, and an output terminal is coupled to this driving stage.
22. charge-pump device as claimed in claim 16, is characterized in that, the one in the middle of this at least one detecting input end of this overload circuit for detecting is directly coupled to this output terminal of this first comparer.
23. charge-pump device as claimed in claim 16, is characterized in that, the one in the middle of this at least one detecting input end of this overload circuit for detecting is coupled to this data output end of this flip-flop.
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| CN201210054893.9A CN103294094B (en) | 2012-03-02 | 2012-03-02 | Charge-pump device and driving force method of adjustment thereof |
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| CN201210054893.9A CN103294094B (en) | 2012-03-02 | 2012-03-02 | Charge-pump device and driving force method of adjustment thereof |
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| CN103294094B true CN103294094B (en) | 2016-01-20 |
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| CN1466807A (en) * | 2000-09-27 | 2004-01-07 | ض� | Degenerative load temperature correction for charge pumps |
| CN1591115A (en) * | 2003-08-29 | 2005-03-09 | 罗姆股份有限公司 | Power supply apparatus |
| CN1677817A (en) * | 2004-03-30 | 2005-10-05 | 罗姆股份有限公司 | Boost circuit capable of step-up ratio control |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20020176188A1 (en) * | 2001-05-25 | 2002-11-28 | Infineon Technologies N.A. Inc. | Offset cancellation of charge pump based phase detector |
| US6628173B2 (en) * | 2001-12-20 | 2003-09-30 | Conexant Systems, Inc. | Data and clock extractor with improved linearity |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1466807A (en) * | 2000-09-27 | 2004-01-07 | ض� | Degenerative load temperature correction for charge pumps |
| CN1591115A (en) * | 2003-08-29 | 2005-03-09 | 罗姆股份有限公司 | Power supply apparatus |
| CN1677817A (en) * | 2004-03-30 | 2005-10-05 | 罗姆股份有限公司 | Boost circuit capable of step-up ratio control |
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