CN103293767B - IPS/FFS type liquid crystal display panel and forming method thereof - Google Patents

Abstract

An IPS/FFS type liquid crystal display panel and a method of forming the same, the display panel having a plurality of pixel cells, each pixel cell including a transmissive region and a reflective region; the method comprises the following steps: the TFT array substrate, the light filter plate and the liquid crystal layer; the TFT array substrate comprises a pixel electrode and a common electrode, and the pixel electrode and/or the common electrode are strip-shaped electrodes; a first polaroid is arranged on the outer side of the TFT array substrate, and a second polaroid is arranged on the outer side of the filter plate; in the transmission area, the inner side of the TFT array substrate and the inner side of the filter plate are respectively provided with a first alignment film with a first alignment; second alignment films with a second alignment are respectively arranged in the reflection region, the inner side of the TFT array substrate and the inner side of the filter plate, and a preset included angle is formed between the first alignment and the second alignment; the cell thickness is the same in the reflective and transmissive regions, the cell thickness having a predetermined value, the predetermined angle and the predetermined value ensuring that display is achieved in both the reflective and transmissive regions. The technical scheme can realize the half-reflection and half-transmission IPS/FFS type liquid crystal display panel with single box thickness.

Description

IPS/FFS type display panels and forming method thereof

Technical field

The present invention relates to field of liquid crystal, particularly relate to IPS/FFS type display panels and forming method thereof.

Background technology

Liquid crystal display is a kind of display adopting liquid crystal material.Liquid crystal be between solid-state and liquid between organic compound.Be heated and can become transparent liquid, the muddiness that can become crystallization after cooling is solid-state.Under electric field action, the change that liquid crystal molecule can arrange, thus impact is by its light change, the change of this light can show as the change of light and shade by the effect of polaroid.By controlling the light and shade change of light to the control of electric field, thus reach the object of display image.According to the arrangement mode of liquid crystal molecule, common liquid crystal display is divided into: the TN-LCD at narrow visual angle, STN-LCD, DSTN-LCD; IPS, VA liquid crystal display etc. of wide viewing angle.

Rotate display mode (In Plane Switching, IPS) liquid crystal display in face and be subject to extensive concern due to its wide viewing angle feature in the application.Nowadays, the display of IPS mode liquid crystal is widely used in mobile phone, portable set etc.The IPS pattern of prior art shows mainly transmissive display, when such as sunlight is stronger out of doors for surround lighting, display screen understands reflect ambient light thus impact is read, and therefore, needs a kind of IPS/FFS type display panels also easily read when surround lighting is stronger.But, there is no half-reflection and half-transmission IPS/FFS type display panels in prior art, backlight both can have been utilized to carry out showing surround lighting also can be utilized to show.Trace it to its cause, because the display of IPS mode liquid crystal needs single box thick (thickness between tft array substrate and filter and the thickness of liquid crystal layer are called that box is thick), under the liquid crystal of echo area and transmission area has identical orientation situation, transmitted ray postpones different with the light of reflection ray.If make the light Late phase of transmitted ray and reflection ray same, the light of retardation plate to transmitted ray or reflection ray in box is needed to postpone; Or change the alignment direction of echo area liquid crystal, by the alignment direction changing echo area liquid crystal, reflection ray is postponed.

Summary of the invention

The problem that the present invention solves is to provide a kind of half-reflection and half-transmission IPS/FFS type display panels, even if when surround lighting is stronger, and also can easy-to-read.

For solving the problem, the invention provides a kind of IPS/FFS type display panels, described display panel has multiple pixel cell, and each pixel cell comprises transmission area and echo area; Comprise:

The tft array substrate be oppositely arranged, filter and the liquid crystal layer between tft array substrate and filter;

In each pixel cell, described tft array substrate comprises pixel electrode and public electrode, and described pixel electrode and/or described public electrode are strip shaped electric poles;

Outside described tft array substrate, have the first polaroid, have the second polaroid outside described filter, the angle between the polarization direction of described first polaroid and the polarization direction of the second polaroid is 90 degree;

In transmission area, inside described tft array substrate with inside described filter, first alignment film with the first orientation is set respectively;

In echo area, inside described tft array substrate with inside described filter, second alignment film with the second orientation is set respectively, between described first orientation and the second orientation, there is predetermined angle;

Described display panels is thick identical with the box of transmission area in echo area, and described box is thick has predetermined value, and described predetermined angle and described predetermined value are guaranteed to realize display in echo area and transmission area simultaneously.

Optionally, the angle between the polarization direction of described first alignment film and described first polaroid is 0.

Optionally, the material of described first alignment film and the second alignment film is Linearly polarized polymerization material.

Optionally, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier, the grid of described public electrode and described TFT switch is positioned at same layer;

Cover the passivation layer of described TFT switch and described transparency carrier;

Described pixel electrode is positioned on described passivation layer, and described pixel electrode is strip shaped electric poles, and the drain electrode of described pixel electrode and TFT switch electrical connection;

In echo area, also comprise reflecting electrode, described reflecting electrode covers described pixel electrode and passivation layer.

Optionally, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier, the grid of described pixel electrode and described TFT switch is positioned at same layer, the drain electrode electrical connection of described pixel electrode and described TFT switch;

Cover the passivation layer of described TFT switch and described transparency carrier;

Described public electrode is positioned on described passivation layer, and described public electrode is strip shaped electric poles;

In echo area, also comprise reflecting electrode, described reflecting electrode covers described public electrode and passivation layer.

Optionally, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier;

Cover the passivation layer of described TFT switch and described transparency carrier,

Described pixel electrode and public electrode are all positioned on described passivation layer, and described pixel electrode and the equal strip shaped electric poles of public electrode, described pixel electrode and public electrode are spaced;

In echo area, also comprise reflecting electrode, described reflecting electrode covers described pixel electrode, public electrode and passivation layer.

Optionally, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier; Described TFT switch comprises: grid, covers the gate dielectric layer of described grid and transparency carrier, is positioned at the active area on described gate dielectric layer, to be positioned on described active area and to be positioned at source electrode and the drain electrode of both sides, active area;

In transmission area, described pixel electrode is positioned on described gate dielectric layer, and is electrically connected with the drain electrode of described TFT switch; In echo area, also comprise reflecting electrode, described reflecting electrode serves as the pixel electrode of echo area, and described reflecting electrode to be positioned on described gate dielectric layer and to be electrically connected with the drain electrode of described TFT switch;

Cover the passivation layer of described TFT switch, reflecting electrode and pixel electrode;

Described public electrode is positioned on described passivation layer, and described public electrode is strip shaped electric poles.

Optionally, described reflecting electrode is electrically connected by the drain electrode of described pixel electrode with TFT switch.

The present invention also provides a kind of formation method of IPS/FFS type display panels, and display panel has multiple pixel cell, and each pixel cell comprises transmission area and echo area; Comprise:

There is provided tft array substrate and filter, in each pixel cell, described tft array substrate comprises pixel electrode and public electrode, and described pixel electrode and/or described public electrode are strip shaped electric poles;

Outside described tft array substrate, form the first polaroid, form the second polaroid outside described filter, the angle between the polarization direction of described first polaroid and the polarization direction of the second polaroid is 90 degree;

Light alignment materials layer is formed respectively inside described tft array substrate He inside filter;

The light alignment materials layer irradiating transmission area inside transmission area and filter inside described tft array substrate with the first light forms first alignment film with the first orientation;

The light alignment materials floor irradiating described tft array substrate inner reflection district and filter inner reflection district with the second light forms second alignment film with the second orientation, has predetermined angle between described first orientation and the second orientation;

After forming the first alignment film and the second alignment film, form liquid crystal layer and tft array substrate and described filter combined, and ensureing to make described display panels thick identical with the box of transmission area in echo area, described box is thick has predetermined value; Described predetermined angle and described predetermined value are guaranteed to realize display in echo area and transmission area simultaneously.

Optionally, the angle between the polarization direction of described first alignment film and described first polaroid is 0.

Optionally, described smooth alignment materials is Linearly polarized polymerization material.

Optionally, the light alignment materials layer that described use first light irradiates transmission area inside described tft array substrate forms first alignment film with the first orientation and comprises:

Use mask plate blocks the echo area on tft array substrate, exposes transmission area;

Irradiate the light alignment materials layer inside described tft array substrate with the first light, form first alignment film with the first orientation in transmission area.

Optionally, the alignment materials that described use first light irradiates transmission area inside described filter forms first alignment film with the first orientation and comprises:

Use the echo area on mask plate shield filter, expose transmission area;

Irradiate the light alignment materials layer inside described filter with the first light, form first alignment film with the first orientation in transmission area.

Optionally, the light alignment materials floor that described use second light irradiates described tft array substrate inner reflection district forms second alignment film with the second orientation and comprises:

Use the transmission area on mask plate shield tft array substrate, expose echo area;

Irradiate the light alignment materials layer inside described tft array substrate with the second light, form second alignment film with the second orientation in echo area.

Optionally, the light alignment materials floor that described use second light irradiates described filter inner reflection district forms second alignment film with the second orientation and comprises:

Use the transmission area on mask plate shade filter, expose echo area;

Irradiate the light alignment materials layer inside described filter with the second light, form second alignment film with the second orientation in echo area.

Optionally, inside described tft array substrate and filter, form light alignment materials layer respectively to comprise:

Burnish gilding alignment materials is dripped respectively at described tft array substrate and filter;

Baking sizing is carried out to described smooth alignment materials, tft array substrate and filter are formed light alignment materials layer respectively.

Optionally, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed TFT switch and public electrode, and the grid of described public electrode and described TFT switch is positioned at same layer;

Form passivation layer, cover described TFT switch and described transparency carrier;

Described passivation layer forms described pixel electrode, and described pixel electrode is strip shaped electric poles, and the drain electrode of described pixel electrode and TFT switch electrical connection;

In echo area, form reflecting electrode, cover described pixel electrode and passivation layer.

Optionally, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed TFT switch and pixel electrode, and the grid of described pixel electrode and described TFT switch is positioned at same layer, the drain electrode electrical connection of described pixel electrode and described TFT switch;

Form passivation layer, cover described TFT switch and described transparency carrier;

Described passivation layer forms public electrode, and described public electrode is strip shaped electric poles;

In echo area, form reflecting electrode, cover described public electrode and passivation layer.

Optionally, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed TFT switch;

Form passivation layer, cover described TFT switch and described transparency carrier;

Described passivation layer forms pixel electrode and public electrode, described pixel electrode and the equal strip shaped electric poles of public electrode, described pixel electrode and public electrode are spaced;

In echo area, form reflecting electrode, cover described pixel electrode, public electrode and passivation layer.

Optionally, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed the grid of TFT switch;

Form gate dielectric layer, cover described grid and described transparency carrier;

Described gate dielectric layer is formed the active area of TFT switch, the pixel electrode of transmission area, the reflecting electrode of echo area, and form the source electrode of TFT switch, drain electrode on the active area, described reflecting electrode, described pixel electrode are electrically connected with the drain electrode of described TFT switch; Described reflecting electrode serves as the pixel electrode of echo area;

Form passivation layer, cover described TFT switch, reflecting electrode and pixel electrode;

Described passivation layer forms public electrode, and described public electrode is strip shaped electric poles.

Optionally, described reflecting electrode is electrically connected by the drain electrode of described pixel electrode with TFT switch.

The half-reflection and half-transmission IPS/FFS type display panels of the present invention first technical scheme, in transmission area, has the first alignment film of the first orientation inside tft array substrate and inside filter; In echo area, there is inside tft array substrate and inside filter the second alignment film of the second orientation, between the first orientation and the second orientation, there is predetermined angle; And, described display panels is thick identical with the box of transmission area in echo area, described box is thick has predetermined value, can guarantee that display panels realizes display in echo area and transmission area simultaneously by arranging rational predetermined angle and described predetermined value, that is, half-reflection and half-transmission display can be realized, make the display panels of IPS/FFS type also can carry out good display in outdoor.

The half-reflection and half-transmission formula IPS/FFS type display panels of the present invention first technical scheme does not need the box changing liquid crystal thick, and manufacture method is simple.

The present invention also provides another kind of IPS/FFS type display panels, and described display panel has multiple pixel cell, and described each pixel cell comprises transmission area and echo area; Comprise:

The tft array substrate be oppositely arranged, filter and the liquid crystal layer between tft array substrate and filter;

In each pixel cell of transmission area, described tft array substrate comprises pixel electrode and public electrode, and the pixel electrode of transmission area and/or public electrode are strip shaped electric poles;

In each pixel cell of echo area, described tft array substrate comprises pixel electrode and public electrode, and the pixel electrode of echo area and/or this public electrode are strip shaped electric poles; Between the strip shaped electric poles of transmission area and the strip shaped electric poles of echo area, there is predetermined angle;

Outside described tft array substrate, have the first polaroid, have the second polaroid outside described filter, the angle between the polarization direction of described first polaroid and the polarization direction of the second polaroid is 90 degree;

In transmission area and echo area, inside described tft array substrate and the inner side of described filter arranges first alignment film with the first orientation respectively;

In echo area, also arrange second alignment film with the second orientation inside described tft array substrate or inside described filter, the first orientation is identical with the direction of the second orientation, and described second alignment film is π/4 phase retardation film;

Described display panels is thick identical with the box of transmission area in echo area, and described box is thick has predetermined value, and described predetermined angle and described predetermined value are guaranteed to realize display in echo area and transmission area simultaneously.

Optionally, the angle between the polarization direction of described first alignment film and described first polaroid is 0.

Optionally, the material of described first alignment film and the second alignment film is liquid crystal polymer material.

Optionally, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier, the grid of the public electrode of echo area, the public electrode of transmission area and described TFT switch is positioned at same layer;

Cover the passivation layer of described TFT switch and described transparency carrier;

The pixel electrode of transmission area, the pixel electrode of echo area are positioned on described passivation layer, the pixel electrode of transmission area, the pixel electrode of echo area are strip shaped electric poles, and the drain electrode of the pixel electrode of described transmission area, the pixel electrode of echo area and TFT switch electrical connection;

In echo area, also comprise reflecting electrode, described reflecting electrode covers pixel electrode and the passivation layer of echo area.

Optionally, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier, the grid of the pixel electrode of transmission area, the pixel electrode of echo area and described TFT switch is positioned at same layer, the drain electrode electrical connection of the pixel electrode of transmission area, the pixel electrode of echo area and described TFT switch;

Cover the passivation layer of described TFT switch and described transparency carrier;

The public electrode of transmission area, the public electrode of echo area are positioned on described passivation layer, and the public electrode of transmission area, the public electrode of echo area are strip shaped electric poles;

In echo area, also comprise reflecting electrode, described reflecting electrode covers public electrode and the passivation layer of echo area.

Optionally, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier;

Cover the passivation layer of described TFT switch and described transparency carrier;

The public electrode of the pixel electrode of transmission area, the pixel electrode of echo area, transmission area, the public electrode of echo area are all positioned on described passivation layer; The pixel electrode of transmission area, the public electrode of transmission area are strip shaped electric poles and are spaced, and the pixel electrode of echo area, the public electrode of echo area are strip shaped electric poles and are spaced;

In echo area, also comprise reflecting electrode, described reflecting electrode covers the pixel electrode of echo area, the public electrode of echo area and passivation layer.

Optionally, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier; Described TFT switch comprises: grid, covers the gate dielectric layer of described grid and transparency carrier, is positioned at the active area on described gate dielectric layer, to be positioned on described active area and to be positioned at source electrode and the drain electrode of both sides, active area;

The pixel electrode of transmission area, the pixel electrode of echo area are positioned on described gate dielectric layer, and are electrically connected with the drain electrode of described TFT switch, and the pixel electrode of echo area serves as reflecting electrode;

Cover the passivation layer of described TFT switch, the pixel electrode of transmission area and the pixel electrode of echo area;

The public electrode of transmission area, the public electrode of echo area are positioned on described passivation layer, and the public electrode of transmission area, the public electrode of echo area are strip shaped electric poles.

Optionally, the pixel electrode of echo area is electrically connected with the drain electrode of TFT switch by the pixel electrode of transmission area.

The present invention also provides the formation method of another kind of IPS/FFS type display panels, and display panel has multiple pixel cell, and each pixel cell comprises transmission area and echo area; Comprise:

Tft array substrate and filter are provided;

In each pixel cell of transmission area, described tft array substrate comprises pixel electrode and public electrode, and the pixel electrode of transmission area and/or the public electrode of transmission area are strip shaped electric poles;

In each pixel cell of echo area, described tft array substrate comprises pixel electrode and public electrode, the pixel electrode of echo area and/or the public electrode of echo area are strip shaped electric poles, have predetermined angle between the strip shaped electric poles of transmission area and the strip shaped electric poles of echo area;

Outside described tft array substrate, form the first polaroid, form the second polaroid outside described filter, the angle between the polarization direction of described first polaroid and the polarization direction of the second polaroid is 90 degree;

In transmission area and echo area, inside described tft array substrate He inside filter, form the first smooth alignment materials layer respectively;

Irradiate described first smooth alignment materials layer with the first light and form first alignment film with the first orientation;

In echo area, inside described tft array substrate or inside described filter, form the second smooth alignment materials layer;

Irradiate described second smooth alignment materials layer with the second light and form second alignment film with the second orientation, the first orientation is identical with the direction of the second orientation, and described second alignment film is π/4 phase retardation film;

After forming the first alignment film and the second alignment film, form liquid crystal layer and tft array substrate and described filter combined, and ensureing to make described display panels thick identical with the box of transmission area in echo area, described box is thick has predetermined value; Described predetermined angle and described predetermined value are guaranteed to realize display in echo area and transmission area simultaneously.

Optionally, the angle between the polarization direction of described first alignment film and described first polaroid is 0.

Optionally, the material of described first smooth alignment materials layer, the second smooth alignment materials layer is liquid crystal polymer material.

Optionally, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed the public electrode of TFT switch and transmission area, the public electrode of echo area, and the grid of the public electrode of transmission area, the public electrode of echo area and described TFT switch is positioned at same layer;

Form passivation layer, cover described TFT switch and described transparency carrier;

Described passivation layer is formed the pixel electrode of described transmission area, the pixel electrode of echo area, the pixel electrode of transmission area, the pixel electrode of echo area are strip shaped electric poles, and the drain electrode of the pixel electrode of the pixel electrode of transmission area, echo area and TFT switch electrical connection;

In echo area, form reflecting electrode, cover pixel electrode and the passivation layer of echo area.

Optionally, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed the pixel electrode of TFT switch and transmission area, the pixel electrode of echo area, the grid of the pixel electrode of transmission area, the pixel electrode of echo area and described TFT switch is positioned at same layer, the drain electrode electrical connection of the pixel electrode of transmission area, the pixel electrode of echo area and described TFT switch;

Form passivation layer, cover described TFT switch and described transparency carrier;

Described passivation layer is formed the public electrode of transmission area, the public electrode of echo area, and the public electrode of transmission area, the public electrode of echo area are strip shaped electric poles;

In echo area, form reflecting electrode, cover public electrode and the passivation layer of described echo area.

Optionally, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed TFT switch;

Form passivation layer, cover described TFT switch and described transparency carrier;

Described passivation layer is formed the pixel electrode of transmission area, the pixel electrode of echo area, the public electrode of transmission area, the public electrode of echo area; The pixel electrode of transmission area, the public electrode of transmission area are strip shaped electric poles and are spaced; The pixel electrode of echo area, the public electrode of echo area are strip shaped electric poles and are spaced;

In echo area, form reflecting electrode, cover the pixel electrode of echo area, the public electrode of echo area and passivation layer.

Optionally, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed the grid of TFT switch;

Form gate dielectric layer, cover described grid and described transparency carrier;

Described gate dielectric layer is formed the active area of TFT switch, the described pixel electrode of transmission area, the pixel electrode of echo area, the pixel electrode of echo area serves as reflecting electrode, described active area is formed the source electrode of TFT switch, drain electrode, and the described pixel electrode of transmission area, the pixel electrode of echo area are electrically connected with the drain electrode of described TFT switch;

Form passivation layer, cover described TFT switch, reflecting electrode and pixel electrode;

Described passivation layer is formed the public electrode of transmission area, the public electrode of echo area, and the public electrode of transmission area, the public electrode of echo area are strip shaped electric poles.

Optionally, the pixel electrode of echo area is electrically connected with the drain electrode of TFT switch by the pixel electrode of transmission area.

The half-reflection and half-transmission formula IPS/FFS type display panels of the present invention second technical scheme, in transmission area and echo area, has the first alignment film of the first orientation inside tft array substrate and inside filter; In echo area, also have the second alignment film of the second orientation inside tft array substrate or inside described filter, the first orientation is identical with the direction of the second orientation, and the second alignment film is π/4 phase retardation film; Between strip shaped electric poles in transmission area and the strip shaped electric poles in echo area, there is predetermined angle; Described display panels is thick identical with the box of transmission area in echo area, described box is thick has predetermined value, can guarantee to realize display in echo area and transmission area by arranging rational predetermined angle and described predetermined value simultaneously, that is, half-reflection and half-transmission display can be realized, make the display panel of IPS display mode also can carry out good display in outdoor.

The half-reflection and half-transmission formula IPS/FFS type display panels of the present invention second technical scheme does not need the box changing liquid crystal thick, and manufacture method is simple.

Accompanying drawing explanation

Fig. 1 is the dot structure schematic diagram of the IPS/FFS type display panels of the present invention first specific embodiment;

The IPS/FFS type display panels that Fig. 2 is the present invention first specific embodiment is along the cross-sectional view in the A-A direction shown in Fig. 1;

Fig. 3 is in the IPS/FFS type display panels of the present invention first specific embodiment in black state situation, the position relationship floor map of transmission area liquid crystal molecule, alignment direction and strip shaped electric poles;

Fig. 4 is the position relationship floor map of echo area liquid crystal molecule, alignment direction and strip shaped electric poles in black state situation in the IPS/FFS type display panels of the present invention first specific embodiment;

Fig. 5 is in the IPS/FFS type display panels of the present invention first specific embodiment in white state situation, the position relationship floor map of transmission area liquid crystal molecule, alignment direction and strip shaped electric poles;

Fig. 6 is the position relationship floor map of echo area liquid crystal molecule, alignment direction and strip shaped electric poles in white state situation in the IPS/FFS type display panels of the present invention first specific embodiment;

Fig. 7 is the dot structure schematic diagram of the IPS/FFS type display panels of the present invention second specific embodiment;

The IPS/FFS type display panels that Fig. 8 is the present invention second specific embodiment is along the cross-sectional view in the A-A direction shown in Fig. 7;

Fig. 9 is the pixel cell schematic diagram of the IPS/FFS type display panels of the present invention the 3rd specific embodiment;

The IPS/FFS type display panels that Figure 10 is the present invention the 3rd specific embodiment is along the cross-sectional view in the A-A direction shown in Fig. 9;

Figure 11 is the pixel cell schematic diagram of the IPS/FFS type display panels of the present invention the 4th specific embodiment;

The IPS/FFS type display panels that Figure 12 is the present invention the 4th specific embodiment is along the cross-sectional view in the A-A direction shown in Figure 11;

Figure 13 is in the IPS/FFS type display panels of the present invention the 4th specific embodiment in black state situation, the position relationship floor map of transmission area liquid crystal molecule, alignment direction and strip shaped electric poles;

Figure 14 is the position relationship floor map of echo area liquid crystal molecule, alignment direction and strip shaped electric poles in black state situation in the IPS/FFS type display panels of the present invention the 4th specific embodiment;

Figure 15 is in the IPS/FFS type display panels of the present invention the 4th specific embodiment in white state situation, the position relationship floor map of transmission area liquid crystal molecule, alignment direction and strip shaped electric poles;

Figure 16 is the position relationship floor map of echo area liquid crystal molecule, alignment direction and strip shaped electric poles in white state situation in the IPS/FFS type display panels of the present invention the 4th specific embodiment;

Figure 17 is the formation method flow schematic diagram of the IPS/FFS type display panels of the present invention first specific embodiment;

Figure 18 is the formation method flow schematic diagram of the IPS/FFS type display panels of the present invention second specific embodiment.

Embodiment

In IPS/FFS type display panels, usually require that the angle of friction matching is 0 degree, so just need stronger friction pressure.Under stronger friction pressure, orientation is residual inevitable, and in black picture, have bright spot appearance.Because IPS/FFS type display panels is very high to the conditional request of friction matching, therefore in order to realize the IPS/FFS type display panels of half-reflection and half-transmission, carry out dual-box thick design can not be accepted, that is, must by the IPS/FFS type display panels of the abundant existing half-reflection and half-transmission of single box.

Linearly polarized polymerization material (linear photo-polymerization, be called for short LPP) and liquid crystal polymer material (liquid crystal polymer, be called for short LCP) ripe at present, this bi-material is light alignment materials, can be realized the orientation of LPP rete and LCP rete by the irradiation of polarized light.

The half-reflection and half-transmission IPS/FFS type display panels of the technical program, utilize LPP material and LCP material as alignment film, by illumination, light orientation is carried out to the LPP material of transmission area and echo area and LCP material, have in the thick IPS/FFS type display panels of single box, half-reflection and half-transmission display can realized.

For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.

Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here to implement with multiple, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention.Therefore the present invention is not by the restriction of following public embodiment.

Before the description specific embodiment of the invention, first the term used in the present invention is defined, can know and define description the present invention.

The inner side of the tft array substrate used in the present invention, the inner side of filter refer to the side that both are relative, and the outside of tft array substrate, the outside of filter are the sides opposing with inner side.

First embodiment

Fig. 1 is the dot structure schematic diagram of the IPS/FFS type display panels of the present invention first specific embodiment, Fig. 2 is the cross-sectional view of IPS/FFS type display panels along the A-A direction shown in Fig. 1 of the present invention first specific embodiment, Fig. 3 be in the IPS/FFS type display panels of the present invention first specific embodiment in black state situation at transmission area liquid crystal molecule, the position relationship floor map of alignment direction and strip shaped electric poles, Fig. 4 be in the IPS/FFS type display panels of the present invention first specific embodiment in black state situation at echo area liquid crystal molecule, the position relationship floor map of alignment direction and strip shaped electric poles.

In conjunction with reference to figure 1 and Fig. 2, in the first embodiment, display panel has multiple pixel cell, and each pixel cell comprises transmission area 41 and echo area 42; IPS/FFS type display panels comprises:

The tft array substrate 10 be oppositely arranged, filter 20 and the liquid crystal layer between tft array substrate 10 and filter 20 30; In each pixel cell, tft array substrate comprises pixel electrode 16 and public electrode 17, and in echo area 42, tft array substrate also comprises reflecting electrode 18, and in a first embodiment, pixel electrode 16 and public electrode 17 are strip shaped electric poles; In conjunction with reference to figure 3, in transmission area 41, the inner side of described tft array substrate 10 and described filter 20 arranges first alignment film 21 with the first orientation 211 respectively; In conjunction with reference to figure 4, in echo area 42, the inner side of described tft array substrate 10 and described filter 20 arranges second alignment film 22 with the second orientation 221 respectively, has predetermined angle C between described first orientation 211 and the second orientation 221.

In conjunction with referring to figs. 2 and 3, have the first polaroid 43 in the outside of tft array substrate 10, the polarization direction a1 that the outside of filter 20 has the second polaroid 44, first polaroid 43 is vertical with the polarization direction a2 of the second polaroid.

In conjunction with reference to figure 1 and Fig. 2, in the present invention first specific embodiment, the concrete structure of tft array substrate 10 is, this tft array substrate 10 comprises: transparency carrier 11, is positioned at the TFT switch on transparency carrier 11, sweep trace 122 and data line 143; Cover the passivation layer 15 of described TFT switch, data line 143 and sweep trace 122; Be positioned at spaced pixel electrode 16 and public electrode 17 on described passivation layer 15, in same pixel cell, there is multiple spaced pixel electrode 16 and public electrode 17, wherein pixel electrode 16 and public electrode 17 are strip shaped electric poles, have gap between pixel electrode 16 and public electrode 17; In echo area 42, comprise the reflecting electrode 18 covering described pixel electrode, public electrode and passivation layer.Each TFT switch comprises: be positioned at the grid 121 on transparency carrier 11, be positioned at the gate dielectric layer 13 on described grid 121, be positioned at the active area (not shown) on described gate dielectric layer 13, be positioned on described active area and lay respectively at source electrode 141, the drain electrode 142 of both sides, active area; Described sweep trace 122 is positioned at same layer with described grid 121; Described data line 143 and described source electrode 141, draining 142 is positioned at same layer.

In first embodiment, transparency carrier 11 can be glass substrate, other transparency carriers that also can be known to the skilled person.The material of pixel electrode is transparent conductive material, such as ITO, but is not limited to ITO.The material of public electrode is transparent conductive material, such as ITO, but is not limited to ITO.The material of reflecting electrode is the metal that reflective is good, such as aluminium.

In transmission area 41, the light path that display panel carries out imaging is: it is after the line polarisation of a1 that the light that backlight sends becomes polarization direction after the first polaroid 43, transmits display panel and carry out imaging after liquid crystal layer 30, second polaroid 44.

In echo area 42, the light path that display panel carries out imaging is: surround lighting becomes the line polarisation that polarization direction is a2 after the second polaroid 44, again after liquid crystal layer 30, filter 20 and the second polaroid 44, penetrates display panel after filtration and carry out imaging after the reflection of tabula rasa 20, liquid crystal layer 30 and reflecting electrode 18.

Because the first polaroid 43 is vertical with the polarization direction of the second polaroid 44, therefore in transmission area 41, light needs to make the polarization direction of light rotate pi/2 after liquid crystal layer 30 just can make light printing opacity second polaroid 44; In echo area 42, light due to be front and back twice through the second polaroid 44, therefore the polarization direction of light twice light after liquid crystal layer 30 still needs identical with the polarization direction of the second polaroid 44, just can carry out imaging through the second polaroid 44.

The following describes the display panels of the first embodiment, echo area and transmission area can realize the principle of work simultaneously shown.

First illustrate, echo area and transmission area can realize the display of black state simultaneously:

In transmission area, there is inside tft array substrate and inside filter the first alignment film of the first orientation, there is between the first orientation and the first polarization direction of the first polaroid the first angle; In echo area, there is inside tft array substrate and inside filter the second alignment film of the second orientation, have the second angle between second orientation and the first polarization direction of the first polaroid, the difference of the first angle and the second angle is the predetermined angle between the first orientation and the second orientation.Due to the first polarization direction of the first polaroid and the second polarization direction of the second polaroid orthogonal, therefore the angle between the second orientation and the second polarization direction is (90 ° of-the second angle).

There is in pixel the strip shaped electric poles (this strip shaped electric poles is pixel electrode or public electrode) extended along first direction, upon application of a voltage, first electric field along first direction of an electric field distribution vertical with first direction can be produced.There is between first direction of an electric field and the first polarization direction the 3rd angle.

Make the first angle=0 °, like this, when pixel electrode not applying voltage, the first orientation is depended in long axis of liquid crystal molecule direction, therefore also just identical with the first polarization direction.The light of backlight rises through the first polaroid to the rearly becomes linearly polarized photon, and when light enters liquid crystal layer, its incident polarization direction is consistent with the long axis direction of liquid crystal molecule.

Liquid crystal material is optics two anisotropy crystal, has birefraction.When polarized light is propagated in optics two anisotropy crystal, if crystal long axis normal is in the direction of propagation, the electric vector defining its linear polarization is Eo, and its mapping component on major and minor axis is Ex, Ey, then when light transmition distance is d, its polarization state can be expressed as:

${\left(\frac{E_x}{\cos \mathrm{\θ}}\right)}^2+{\left(\frac{E_y}{\sin \mathrm{\θ}}\right)}^2-2\frac{E_x{E}_y}{\sin \mathrm{\θ}\cos \mathrm{\θ}}\cos \mathrm{\δ}=E_0^2{\sin }^2\mathrm{\δ}$ ①

$\mathrm{\δ}=(n_{//}-n_{\⊥})\frac{\mathrm{d\ω}}{C}$ ②

Wherein θ is the angle of incident polarization direction and crystal long axis direction, and here θ is the first angle.δ is an amount changed along with light transmition, and is proportional to the distance d of light propagation.

In transmission area, when θ be the first angle and=0 ° time, E _y=0, namely now light maintains linear polarization state all the time, and polarization direction does not change, so now polarized light cannot pass through the second polaroid, defines the dark-state in liquid crystal display.

In echo area, ambient light is from the incident liquid crystal layer of the second polaroid, according to formula 1., now incident angle θ=(90 ° of-the second angle), because the second angle is not 0, therefore 1. formula is deformed into an elliptic equation, along with light is propagated in liquid crystal layer, light path increases, and δ is also along with increase, and 1. formula will become E successively _x=E _y, elliptic equation, equation of a circle, elliptic equation, E _x=-E _y, namely polarized light state changes according to straight line, ellipse, circle, inverse order that is oval, rectilinearly polarized light.

When light just incident liquid crystal layer time, d=0, formula form is 1.:

${\left(\frac{E_x}{\cos \mathrm{\θ}}\right)}^2+{\left(\frac{E_y}{\sin \mathrm{\θ}}\right)}^2-2\frac{E_x{E}_y}{\cos \mathrm{\θ}\sin \mathrm{\θ}}=0$ ③

Its solution is the analytic expression of the linearly polarized light of just incidence that Here it is.At any time, all certainly exist a thick H of liquid crystal cell, can make light have passed through 2 times of liquid crystal layer boxes thick after, its δ=2 π, can allow formula 1. become

${\left(\frac{E_x}{\cos \mathrm{\θ}}\right)}^2+{\left(\frac{E_y}{\sin \mathrm{\θ}}\right)}^2-2\frac{E_x{E}_y}{\sin \mathrm{\θ}\cos \mathrm{\θ}}=0$ ④

Now, certainly exist an angle θ=(90 ° of-the second angle), can make polarization state non trivial solution by become namely the linearly polarized light that a polarization direction have rotated 90 ° is become.Summary is got up, this process is exactly: ambient light is with the incident liquid crystal layer in a polarization direction identical with the second polarization direction and after reflecting, with a polarization direction again outgoing vertical with the second polarization direction, make it by the second polaroid, the dark-state in liquid crystal display cannot be formed.

In sum, the technical program, when not powering up, can be implemented in transmission area and echo area be black state by arranging thick, between the first orientation and the second orientation the predetermined angle of rational box.

The following describes the principle simultaneously realizing the display of white state in transmission area and echo area.

Fig. 5 is in the IPS/FFS type display panels of the present invention first specific embodiment in white state situation, in the position relationship floor map of transmission area liquid crystal molecule, alignment direction and strip shaped electric poles; Fig. 6 is in the IPS/FFS type display panels of the present invention first specific embodiment in white state situation, in the position relationship floor map of echo area liquid crystal molecule, alignment direction and strip shaped electric poles; In conjunction with reference to figure 5 and Fig. 6, after pixel electrode adding maximum gray voltage, namely in white state situation, by controlling the voltage of pixel electrode 16, make the orientation of liquid crystal molecule 31 perpendicular to strip shaped electric poles in transmission area and echo area, in figure, represent strip shaped electric poles with pixel electrode 16.

After pixel electrode adding maximum gray voltage, transmission area is all identical with the first direction of an electric field with the long axis of liquid crystal molecule of echo area, namely all has the 3rd angle with the first polarization direction a1.Get the 3rd angle=45 °, owing to perpendicularing to one another with the second polarization direction in the first polarization direction, therefore the angle of long axis of liquid crystal molecule direction and the second polarization direction is also 45 °.

In transmission area, the light of backlight plays incident liquid crystal layer to the rear through the first polaroid, and linear polarization time incident and long axis of liquid crystal molecule angle are 45 °, and now 1. formula is deformed into

$E_x^2+E_y^2-2E_x{E}_y\cos \mathrm{\δ}=\frac{E_o^2}{2}{\sin }^2\mathrm{\δ}$ ⑤

There is a thick H of liquid crystal cell as previously mentioned, in transmission area, make the light path δ=π of once-through liquid crystal cell, formula can be allowed 5. to become E _x=-E _y, namely allow the polarization direction half-twist of light, thus be able to outgoing second polaroid, form the white state in liquid crystal display.

In echo area, ambient light is after the second polaroid incidence, and polarization of light direction is also 45 ° with long axis of liquid crystal molecule angle, formula 5. in the middle of, the path of light process is 2D, therefore δ=2 π, and 5. formula is deformed into E _x=E _y, namely allow the polarization direction of light rotate 180 °, thus be able to outgoing second polaroid, form the white state in liquid crystal display.

In fact, even if the 3rd angle is not more special 45 °, but the value θ that more general, but the relation reflecting light path δ=2 π as single light path δ=π still exists, and transmission area and echo area realize on state of simultaneously and remain feasible.Only need suitable to arrange thick H and the θ of liquid crystal cell.

In sum, in the technical program, as long as the value of the angle rationally arranged between the first orientation and the second orientation and the thick H of liquid crystal cell, echo area and transmission area can be allowed can to realize bright showing slinkingly and to show, and Curve Matching.

Second embodiment

Fig. 7 is the dot structure schematic diagram of the IPS/FFS type display panels of the present invention second specific embodiment, and the IPS/FFS type display panels of Fig. 8 the present invention second specific embodiment is along the cross-sectional view in the A-A direction shown in Fig. 7.

In conjunction with reference to figure 7 and Fig. 8, described display panel has multiple pixel cell, and described each pixel cell comprises transmission area 41 and echo area 42; In second embodiment, IPS/FFS type display panels, comprising: the tft array substrate 10a be oppositely arranged, filter 20a and the liquid crystal layer 30a between tft array substrate 10a and filter 20a; Tft array substrate 10a comprises pixel electrode 16a and public electrode 17a, and in this second embodiment, pixel electrode 16a is strip shaped electric poles, and public electrode 17a also can be able to be one whole electrode for strip shaped electric poles; In conjunction with reference to figure 3, in transmission area 41, the inner side of described tft array substrate 10a and described filter 20a arranges first alignment film 21 with the first orientation 211 respectively; In conjunction with reference to figure 4, in echo area 42, the inner side of described tft array substrate 10a and described filter 20a arranges second alignment film 22 with the second orientation 221 respectively, has predetermined angle C between described first orientation 211 and the second orientation 221.

In a second embodiment, in conjunction with reference to figure 7 and Fig. 8, tft array substrate 10a comprises: transparency carrier 11a, is positioned at the TFT switch on transparency carrier 11a, sweep trace 122a, data line 143a, public electrode 17a, and this public electrode 17a also can be able to tile transparency carrier 11a for strip shaped electric poles; Cover the passivation layer 15a of described TFT switch, public electrode 17a, data line 143a and sweep trace 122a; Being positioned at spaced pixel electrode 16a, pixel electrode 16a on described passivation layer 15a is strip shaped electric poles, in same pixel cell, has multiple spaced pixel electrode 16; In echo area 42, also comprise the reflecting electrode 18a covering pixel electrode 16a and passivation layer 15a.Each TFT switch comprises: be positioned at the grid 121a on transparency carrier 11a, described public electrode 17a and described grid are positioned at same layer, be positioned at the gate dielectric layer 13a on described grid 121a, be positioned at the active area (not shown) on described gate dielectric layer 13a, to be positioned on described active area and lay respectively at the source electrode 141a of both sides, active area, drain electrode 142a, pixel electrode 16a be electrically connected with the drain electrode 143a of TFT switch; Described sweep trace 122a and described grid 121a is positioned at same layer; Described data line 143a and described source electrode 141a, the 142a that drains are positioned at same layer.

Other are identical with the first embodiment, do not repeat at this.

In addition, in this second embodiment, the upper-lower position of pixel electrode and public electrode can exchange, and namely tft array substrate comprises: transparency carrier; Be positioned at the TFT switch on described transparency carrier, the grid of described pixel electrode and described TFT switch is positioned at same layer, the drain electrode electrical connection of described pixel electrode and described TFT switch; Cover the passivation layer of described TFT switch and described transparency carrier; Described public electrode is positioned on described passivation layer, and described public electrode is strip shaped electric poles; In echo area, described reflecting electrode covers described public electrode and passivation layer.

3rd embodiment

Fig. 9 is the pixel cell schematic diagram of the IPS/FFS type display panels of the present invention the 3rd specific embodiment, and the IPS/FFS type display panels that Figure 10 is the present invention the 3rd specific embodiment is along the cross-sectional view in the A-A direction shown in Fig. 9.

In conjunction with reference to figure 9 and Figure 10, described display panel has multiple pixel cell, and described each pixel cell comprises transmission area 41 and echo area 42; In 3rd embodiment, IPS/FFS type display panels, comprising: the tft array substrate 10b be oppositely arranged, filter 20b and the liquid crystal layer 30b between tft array substrate 10b and filter 20b; Tft array substrate comprises pixel electrode 16b and public electrode 17b, and in the 3rd embodiment, public electrode 17a is strip shaped electric poles, and pixel electrode 16b is only positioned at transmission area 42, also can be able to be one whole electrode for strip shaped electric poles; Echo area has reflecting electrode 18b, and this reflecting electrode 18b serves as the pixel electrode of echo area.In conjunction with reference to figure 3, in transmission area 41, the inner side of described tft array substrate 10b and described filter 20b arranges first alignment film 21 with the first orientation 211 respectively; In conjunction with reference to figure 4, in echo area 42, inside described tft array substrate 10b and the inner side of described filter 20b arranges second alignment film 22 with the second orientation 221 respectively, has predetermined angle C between described first orientation 211 and the second orientation 221.

In the third embodiment, in conjunction with reference to figure 9 and Figure 10, tft array substrate 10b comprises: transparency carrier 11b, is positioned at the TFT switch on transparency carrier 11b, sweep trace 122b, data line 143b; TFT switch comprises: be positioned at the grid 121b on transparency carrier 11b, be positioned at the gate dielectric layer 13b on described grid 121b, be arranged in the active area (figure does not mark) on described gate dielectric layer 13b, be positioned on described active area and lay respectively at source electrode 141b, the drain electrode 142b of both sides, active area; In transmission area 41, be positioned at the pixel electrode 16b on described gate dielectric layer 13b, this pixel electrode 16b is electrically connected with the drain electrode 142b of TFT switch, and is positioned at the lower floor of drain electrode 142b; In echo area 42, be positioned at the reflecting electrode 18b on described gate dielectric layer 13b, this reflecting electrode and source electrode, drain electrode are positioned at same layer, and this reflecting electrode and the pixel electrode be electrically connected as echo area that drains, be electrically connected with drain electrode 142b by pixel electrode 16b in this embodiment; Cover the passivation layer 15b of described TFT switch, reflecting electrode 18b, pixel electrode 16b; Being positioned at spaced public electrode 17b, public electrode 16b on described passivation layer 15b is strip shaped electric poles, and this public electrode is positioned at transmission area 41 and echo area 42.Described sweep trace 122a and described grid 121a is positioned at same layer; Described data line 143a and described source electrode 141a, the 142a that drains, reflecting electrode 18b are positioned at same layer; .

In the 3rd embodiment, the material of pixel electrode is transparent conductive material, such as ITO, but is not limited to ITO material; The material of public electrode is transparent conductive material, such as ITO, but is not limited to ITO material; The material of reflecting electrode is opaque metal material, such as metallic aluminium, but is not limited to metallic aluminium, other reflecting materials that also can be known to the skilled person.In the 3rd embodiment, do not have transparent pixel electrode in echo area, by reflecting electrode and the pixel electrode be electrically connected as echo area that drains, relative to the first embodiment and the second embodiment, technique is simple and display panel thickness is thin.

Other are identical with the first embodiment, do not repeat at this.

The half-reflection and half-transmission IPS/FFS type display panels of the present invention first technical scheme, in transmission area, has the first alignment film of the first orientation inside tft array substrate and inside filter; In echo area, there is inside tft array substrate and inside filter the second alignment film of the second orientation, between the first orientation and the second orientation, there is predetermined angle; And, described display panels is thick identical with the box of transmission area in echo area, described box is thick has predetermined value, can guarantee that display panels realizes display in echo area and transmission area simultaneously by arranging rational predetermined angle and described predetermined value, that is, half-reflection and half-transmission display can be realized, make the display panels of IPS/FFS type also can carry out good display in outdoor.

The half-reflection and half-transmission formula IPS/FFS type display panels of the present invention first technical scheme does not need the box changing liquid crystal thick, and manufacture method is simple.

4th embodiment

Figure 11 is the pixel cell schematic diagram of the IPS/FFS type display panels of the present invention the 4th specific embodiment; The IPS/FFS type display panels that Figure 12 is the present invention the 4th specific embodiment is along the cross-sectional view in the A-A direction shown in Figure 11; Figure 13 is in the IPS/FFS type display panels of the present invention the 4th specific embodiment in black state situation, in the position relationship floor map of transmission area liquid crystal molecule, alignment direction and strip shaped electric poles; Figure 14 is in the IPS/FFS type display panels of the present invention the 4th specific embodiment in black state situation, in the position relationship floor map of echo area liquid crystal molecule, alignment direction and strip shaped electric poles.

In conjunction with reference Figure 11 and Figure 12, in the 4th embodiment, display panel has multiple pixel cell, and described each pixel cell comprises transmission area 41 and echo area 42, IPS/FFS type display panels comprises:

The tft array substrate 10c be oppositely arranged, filter 20c and the liquid crystal layer 30c between tft array substrate 10c and filter 20c; In each pixel cell, the public electrode 172c of the pixel electrode 16c that tft array substrate 10c comprises transmission area, the pixel electrode of echo area served as by reflecting electrode 18c, the public electrode 171c of transmission area and echo area.In the 4th embodiment, the public electrode 171c of transmission area and the public electrode 172c of echo area is strip shaped electric poles; In conjunction with reference Figure 13, in transmission area 41 and echo area 42, the inner side of described tft array substrate 10c and the inner side of described filter 20c arrange first alignment film 23 with the first orientation 231 respectively; In conjunction with reference Figure 14 and Figure 13, in echo area 42, second alignment film 24 with the second orientation 241 is set inside described filter 20c, also can for arranging second alignment film with the second orientation inside TFT substrate, second alignment film can be positioned on the first alignment film, also can be positioned under the first alignment film; First orientation 231 is identical with the direction of the second orientation 241, and described second alignment film 24 is for having predetermined angle D between π/4 phase retardation film echo area strip shaped electric poles and public electrode 172c and transmission area strip shaped electric poles and public electrode 171c.

In conjunction with reference Figure 11 and Figure 12, describe the structure of tft array substrate 10c in detail, in the fourth embodiment, tft array substrate 10c comprises: transparency carrier 11c, is positioned at the TFT switch on transparency carrier 11c, sweep trace 122c, data line 143c; TFT switch comprises: be positioned at the grid 121c on transparency carrier 11c, be positioned at the gate dielectric layer 13c on described grid 121c, be arranged in the active area (the non-label of figure) on described gate dielectric layer 13c, be positioned on described active area and lay respectively at source electrode 141c, the drain electrode 142c of both sides, active area; In transmission area 41, be positioned at the pixel electrode 16c of the transmission area on described gate dielectric layer 12c, this pixel electrode 16c is electrically connected with the drain electrode 142c of TFT switch, and is positioned at the lower floor of drain electrode 142c; In echo area, be positioned at the reflecting electrode 18c on described gate dielectric layer 12c, this reflecting electrode 18c and source electrode 141c, drain electrode 142c are positioned at same layer, this reflecting electrode 18c is electrically connected the pixel electrode as echo area 42 with drain electrode 142c, is electrically connected in this embodiment by pixel electrode 16c with drain electrode 142c; Cover the passivation layer 15c of described TFT switch, reflecting electrode 18c, pixel electrode 16c; Be positioned at spaced public electrode on described passivation layer 15c, this public electrode comprises the public electrode 171c being positioned at the transmission area 41 and public electrode 172c being positioned at echo area 42, public electrode 171c and public electrode 172c is strip shaped electric poles, has predetermined angle D between public electrode 171c and public electrode 172c.Described sweep trace 122a and described grid 121a is positioned at same layer; Described data line 143c and described source electrode 141c, the 142c that drains are positioned at same layer.The tft array substrate of the 4th embodiment, the public electrode 171c of transmission area 41 and have predetermined angle between the public electrode 172c of echo area 42, other are all identical with the 3rd embodiment.Described display panels is thick identical with the box of transmission area in echo area, and described box is thick has predetermined value, and described predetermined angle and described predetermined value are guaranteed to realize display in echo area and transmission area simultaneously.

In conjunction with reference to Figure 11, Figure 12 and Figure 13, Figure 14, have the first polaroid 43 in the outside of tft array substrate 10c, the polarization direction a1 that the outside of filter 20c has the second polaroid 44, first polaroid 43 is vertical with the polarization direction a2 of the second polaroid.In echo area, can not have the first polaroid 43 in the outside of tft array substrate 10c, in this embodiment, all there is the first polaroid 43 transmission area and echo area, but the first polaroid is inoperative to echo area.

In transmission area 41 and echo area 42, the light path of image formation by rays is identical with the first embodiment, does not repeat at this.

Different with the 3rd embodiment from the first embodiment, the second embodiment, in the fourth embodiment, transmission area is identical with the friction matching of echo area liquid crystal layer 30c, namely to be positioned at inside tft array substrate and the first alignment film inside filter, the second alignment film have identical orientation, but between the strip shaped electric poles in transmission area and the strip shaped electric poles in echo area, there is predetermined angle, and the second alignment film be positioned at inside filter echo area is π/4 phase retardation film.

In 4th embodiment, the material of the first alignment film and the second alignment film is liquid crystal polymer material.

The following describes the principle that the 4th embodiment echo area and transmission area can realize showing simultaneously.

First illustrate, echo area and transmission area can realize the display of black state simultaneously:

The half-reflection and half-transmission IPT/FFS type display panels of fourth embodiment of the invention, in transmission area and echo area, there is inside tft array substrate and inside filter the first alignment film of the first orientation, between the first orientation 231 and the first polarization direction a1 of the first polaroid, there is the first angle.Due to the first polarization direction of the first polaroid and the second polarization direction of the second polaroid orthogonal, therefore the angle between the first orientation and the second polarization direction is (90 ° of-the first angle).

There is in transmission area the strip shaped electric poles along first direction distribution, upon application of a voltage, first electric field along first direction of an electric field distribution vertical with first direction can be produced.There is between first direction of an electric field and the first polarization direction the second angle.There is in echo area the strip shaped electric poles along second direction distribution, upon application of a voltage, second electric field along second direction of an electric field distribution vertical with second direction can be produced.There is between second direction of an electric field and the first polarization direction the 3rd angle.

In addition, in the technical program, in echo area, on the first alignment film inside tft array substrate or inside filter, be also provided with second alignment film with the second orientation.Especially, the second alignment film adopts LCP technology to be formed, and therefore in optical model, it can be equivalent to an independent liquid crystal layer, has the n of himself uniqueness _//and n.For the polarized light passed from its inside, 1. formula is still suitable for.By arranging its thickness, its δ value is made to be fixed as π/4.

In the technical program, make the first angle=0 °, like this, when pixel electrode not applying voltage, the first orientation is depended in long axis of liquid crystal molecule direction, therefore also just identical with the first polarization direction.

In transmission area, the light of backlight rises through the first polaroid to the rearly becomes linearly polarized photon, and when light enters liquid crystal layer, its incident polarization direction is consistent with the long axis direction of liquid crystal molecule.Similar with the situation of the first technical scheme, now 1. formula is deformed into E _y=0, namely incident linear polarization does not change, thus cannot outgoing second polaroid, forms the dark-state in liquid crystal display.

In echo area, ambient light is by incident after the second polaroid, incident polarization direction and long axis of liquid crystal molecule angle theta=(90 ° of-the first angle)=90 °, but because it is from the process inciding outgoing after reflection, will through the second alignment film being arranged on echo area twice, therefore formula 1. in need to add fixing 2*(π/4 for the δ value of liquid crystal layer) offset, namely

${\left(\frac{E_x}{\cos \mathrm{\θ}}\right)}^2+{\left(\frac{E_y}{\sin \mathrm{\θ}}\right)}^2-2\frac{E_x{E}_y}{\sin \mathrm{\θ}\cos \mathrm{\θ}}\cos (\mathrm{\δ}+\frac{\mathrm{\π}}{2})=E_o^2{\sin }^2(\mathrm{\δ}+\frac{\mathrm{\π}}{2})$ ⑥

That is ${\left(\frac{E_x}{\cos \mathrm{\θ}}\right)}^2+{\left(\frac{E_y}{\sin \mathrm{\θ}}\right)}^2+2\frac{E_x{E}_y}{\sin \mathrm{\θ}\cos \mathrm{\θ}}\sin \mathrm{\δ}=E_o^2{\cos }^2\mathrm{\δ}$ ⑦

When θ=90 °, solve E _x=0, namely light rear polarizer direction have rotated 90 °, thus cannot outgoing second polaroid, defines the dark-state in liquid crystal display.

First illustrate, echo area and transmission area can realize the display of white state simultaneously:

In the technical program, after pixel electrode adding maximum gray voltage, the long axis of liquid crystal molecule of transmission area is identical with the first direction of an electric field, namely has the second angle with the first polarization direction.Get the second angle=45 °, owing to perpendicularing to one another with the second polarization direction in the first polarization direction, therefore the angle of long axis of liquid crystal molecule direction and the second polarization direction is also 45 °.The light of backlight plays incident liquid crystal layer to the rear through the first polaroid, linear polarization time incident and long axis of liquid crystal molecule angle are 45 °, similar with the situation of the first embodiment, the now linear polarization half-twist of light, be able to outgoing second polaroid, form the on state of in liquid crystal display.

In fact, even if the second angle is not more special 45 °, but the value θ that more general, but still exists and can make polarization state non trivial solution be θ value, only need suitable to arrange thick H and the θ of liquid crystal cell.

In echo area, long axis of liquid crystal molecule is identical with the second direction of an electric field, has the 3rd angle with the first polarization direction, therefore has angle theta=(90 ° of-three angles) with the second polarization direction.Still consider reflection ray twice situation through the second alignment film, formula 7. in, certainly exist a θ, make when 2 times of light path δ=(2 π+pi/2), polarization state non trivial solution is namely light finally with the polarization state identical with during incidence again outgoing second polaroid, can form the on state of in liquid crystal display.

In sum, in the technical program, as long as rationally arrange the value of the 3rd angle and the thick H of liquid crystal cell, echo area and transmission area can be allowed can to realize bright showing slinkingly and to show, and Curve Matching.Due to, corner dimension between the strip shaped electric poles of transmission area and the strip shaped electric poles of echo area determines the size of the 3rd angle, therefore, as long as the value of the predetermined angle rationally arranged between the strip shaped electric poles of transmission area and the strip shaped electric poles of echo area and the thick H of liquid crystal cell, echo area and transmission area can be allowed can to realize bright showing slinkingly show, and Curve Matching.

5th embodiment

In 5th embodiment, the structure of tft array substrate is different from the 4th embodiment, and other are identical with the 4th embodiment.

In 5th embodiment, tft array substrate comprises: transparency carrier; Be positioned at the TFT switch on described transparency carrier; Cover the passivation layer of described TFT switch and described transparency carrier, the pixel electrode of the pixel electrode of transmission area, the public electrode of transmission area, echo area, the public electrode of echo area are all positioned on described passivation layer, the pixel electrode of transmission area, the public electrode of transmission area are strip shaped electric poles, are spaced, and the pixel electrode of echo area, the public electrode of echo area are strip shaped electric poles, are spaced; In echo area, also comprise reflecting electrode, described reflecting electrode covers the pixel electrode of echo area, echo area public electrode and passivation layer.Wherein, have predetermined angle between the strip shaped electric poles of transmission area and the strip shaped electric poles of echo area, this predetermined angle and the 4th is implemented identical.Detailed construction about the tft array substrate in the 5th embodiment can with reference to the detailed construction of tft array substrate in the first embodiment, just in the 5th embodiment, pixel electrode is divided into the strip pixel electrode of transmission area and the strip pixel electrode of echo area, and has predetermined angle between the strip pixel electrode of transmission area and the strip shaped electric poles of echo area; Public electrode is divided into the strip public electrode of transmission area and the strip public electrode of echo area, and has predetermined angle between the strip public electrode of transmission area and the strip public electrode of echo area.

6th embodiment

In 6th embodiment, the structure of tft array substrate is different from the 4th embodiment, and other are identical with the 4th embodiment.

In 6th embodiment, tft array substrate comprises: transparency carrier; Be positioned at the TFT switch on described transparency carrier, the grid of the public electrode of transmission area, the public electrode of echo area and described TFT switch is positioned at same layer; Cover the passivation layer of described TFT switch and described transparency carrier; The pixel electrode of transmission area, the pixel electrode of echo area are positioned on described passivation layer, the pixel electrode of transmission area, the pixel electrode of echo area are strip shaped electric poles, between the pixel electrode of transmission area, the pixel electrode of echo area, there is predetermined angle, the drain electrode electrical connection of the pixel electrode of transmission area, the pixel electrode of echo area and TFT switch; In echo area, also comprise reflecting electrode, described reflecting electrode covers pixel electrode and the passivation layer of echo area.Wherein, the predetermined angle and the 4th between the strip pixel electrode of transmission area and the strip pixel electrode of echo area is implemented identical.Detailed construction about the tft array substrate in the 6th embodiment can with reference to the detailed construction of tft array substrate in the second embodiment, just in the sixth embodiment, pixel electrode is divided into the strip pixel electrode of transmission area and the strip shaped electric poles of echo area, and has predetermined angle between the strip pixel electrode of transmission area and the strip shaped electric poles of echo area.

In the 6th embodiment, the upper-lower position of pixel electrode and public electrode can exchange, and namely tft array substrate comprises: transparency carrier; Be positioned at the TFT switch on described transparency carrier, the grid penetrating the pixel electrode in district, the pixel electrode of echo area and described TFT switch is positioned at same layer, penetrates the drain electrode electrical connection of the pixel electrode in district, the pixel electrode of echo area and described TFT switch; Cover the passivation layer of described TFT switch and described transparency carrier; The public electrode of transmission area, the public electrode of echo area are positioned on described passivation layer, the public electrode of transmission area, the public electrode of echo area are strip shaped electric poles, and have predetermined angle between the strip public electrode of transmission area and the strip public electrode of echo area; In echo area, also comprise reflecting electrode, described reflecting electrode covers public electrode and the passivation layer of echo area.

The half-reflection and half-transmission formula IPS/FFS type display panels of the present invention second technical scheme, in transmission area and echo area, has the first alignment film of the first orientation inside tft array substrate and inside filter; In echo area, also have the second alignment film of the second orientation inside tft array substrate or inside described filter, the first orientation is identical with the direction of the second orientation, and the second alignment film is π/4 phase retardation film; Between strip shaped electric poles in transmission area and the strip shaped electric poles in echo area, there is predetermined angle; Described display panels is thick identical with the box of transmission area in echo area, described box is thick has predetermined value, can guarantee to realize display in echo area and transmission area by arranging rational predetermined angle and described predetermined value simultaneously, that is, half-reflection and half-transmission display can be realized, make the display panel of IPS display mode also can carry out good display in outdoor.

The half-reflection and half-transmission formula IPS/FFS type display panels of the present invention second technical scheme does not need the box changing liquid crystal thick, and manufacture method is simple.

Present invention also offers the formation method of the above IPS/FFS type display panels, the following describes the embodiment of the formation method of IPS/FFS type display panels.

First embodiment

Figure 17 is the formation method flow schematic diagram of the IPS/FFS type display panels of the present invention first specific embodiment, and with reference to Figure 17, the formation method of the IPS/FFS type display panels of the present invention first specific embodiment comprises:

Step S11, provides tft array substrate and filter, and in each pixel cell, described tft array substrate comprises pixel electrode and public electrode, and described pixel electrode and/or described public electrode are strip shaped electric poles;

Step S12, forms the first polaroid outside described tft array substrate, forms the second polaroid outside described filter, and the angle between the polarization direction of described first polaroid and the polarization direction of the second polaroid is 90 degree;

Step S13, forms light alignment materials layer respectively inside described tft array substrate and filter;

Step S14, the light alignment materials layer irradiating transmission area on transmission area and filter inside described tft array substrate with the first light forms first alignment film with the first orientation;

Step S15, the light alignment materials floor irradiating echo area on described tft array substrate inner reflection district and filter with the second light forms second alignment film with the second orientation, has predetermined angle between described first orientation and the second orientation;

Step S16, after forming the first alignment film and the second alignment film, form liquid crystal layer and tft array substrate and described filter combined, and ensureing to make described display panels thick identical with the box of transmission area in echo area, described box is thick has predetermined value; Described predetermined angle and described predetermined value are guaranteed to realize display in echo area and transmission area simultaneously.

The formation method of this first embodiment defines the display panel of above first embodiment, the second embodiment and the 3rd embodiment.

Below each step is described in detail,

Step S11:

In conjunction with reference to figure 1 and Fig. 2, when tft array substrate is the tft array substrate 10a of the first embodiment, the formation method of described tft array substrate comprises: provide transparency carrier 11a; Described transparency carrier 11a forms TFT switch; Form passivation layer 15a, cover described TFT switch and described transparency carrier 11a; Described passivation layer 15a forms described pixel electrode 16a and public electrode 17a, described pixel electrode 16a and the equal strip shaped electric poles of public electrode 17a, described pixel electrode 16a and public electrode 17a is spaced; In echo area, form described reflecting electrode 18a, cover described pixel electrode 16a and common electrode 17a.Formation method about this tft array substrate is identical with prior art substrate, relative to prior art, adds the step forming reflecting electrode 18a in echo area.The concrete grammar forming reflecting electrode 18a is: deposition of reflective layer, then carries out photoetching to reflection horizon, etching forms reflecting electrode 18a.

In conjunction with reference to figure 9 and Figure 10, when tft array substrate is the tft array substrate 10b of the second embodiment, the formation method of described tft array substrate comprises: provide transparency carrier 11a; Described transparency carrier 11b is formed TFT switch and described public electrode 17b, and the grid 121b of described public electrode 17b and described TFT switch is positioned at same layer; Form passivation layer 15b, cover described TFT switch and described transparency carrier 11b; Described passivation layer 15b forms described pixel electrode 16b, and described pixel electrode 16b is strip shaped electric poles, and the drain electrode of described pixel electrode and TFT switch electrical connection; In echo area, form described reflecting electrode 18b, cover described pixel electrode 16b and common electrode 17b.Formation method about TFT switch is known technology, does not repeat at this.Formation method about this tft array substrate is identical with prior art substrate, relative to prior art, adds the step forming reflecting electrode 18b in echo area.The concrete grammar forming reflecting electrode 18b is: deposition of reflective layer, then carries out photoetching to reflection horizon, etching forms reflecting electrode 18b.

In second embodiment, when the upper-lower position of pixel electrode and public electrode exchanges, the formation method of described tft array substrate comprises: provide transparency carrier; Described transparency carrier is formed TFT switch and described pixel electrode, and the grid of described pixel electrode and described TFT switch is positioned at same layer, the drain electrode electrical connection of described pixel electrode and described TFT switch; Form passivation layer, cover described TFT switch and described transparency carrier; Described passivation layer forms described public electrode, and described public electrode is strip shaped electric poles; In echo area, form described reflecting electrode, cover described public electrode and passivation layer.

In conjunction with reference Figure 11 and Figure 12, when tft array substrate is the tft array substrate 10c of the 3rd embodiment, the formation method of described tft array substrate comprises: provide transparency carrier 11c; Described transparency carrier 11c is formed the grid 121c of TFT switch, sweep trace 122c; Form gate dielectric layer 12c, cover described grid 121c, sweep trace 122c and described transparency carrier 11c; Described gate dielectric layer 12 is formed the active area (in figure non-label) of TFT switch, data line 143c, at the described pixel electrode 16c of transmission area 41, the reflecting electrode 18c in echo area 42, form the source electrode 141c of TFT switch, drain electrode 142c on the active area, described reflecting electrode and described pixel electrode are electrically connected with the drain electrode of described TFT switch, and described reflecting electrode is as the pixel electrode of echo area.Concrete formation method is: provide transparency carrier 11c; Transparency carrier 11c forms metal level, then to metal level carries out photoetching, etching forms TFT switch grid 121c, sweep trace 122c; Then, form gate dielectric layer 12c, cover described grid 121c, sweep trace 122c and described transparency carrier 11c; Afterwards, described gate dielectric layer 12 is formed the active area (in figure non-label) of TFT switch; Then, deposit transparent conductive material layer, to the pixel electrode that transparency conducting layer carries out photoetching, etching forms transmission area; Afterwards, deposition of reflective layer, to the reflecting electrode 18c that photoetching is carried out in reflection horizon, etching forms echo area, this reflecting electrode 18c cover part pixel electrode 16c, realizes the electrical connection with pixel electrode 16c; Then, form metal level, covering gate dielectric layer 12c, pixel electrode 16c, reflecting electrode 18c, active area, to the source electrode 141c that metal level carries out photoetching, etching forms TFT switch, drain electrode 142c, and pixel electrode 16c described in drain electrode 142c cover part, realize the electrical connection with pixel electrode 16c; Afterwards, form passivation layer 15c, passivation layer 15c is formed public electrode 17c.Wherein, the order being formed with source region and pixel electrode can be exchanged.And, source electrode, drain electrode identical with the material of reflecting electrode time, three can be formed in same deposition, etching technics.

Step S13, described tft array substrate and filter are formed light alignment materials layer respectively.Concrete grammar is: drip burnish gilding alignment materials respectively at tft array substrate and filter; Baking sizing is carried out to described smooth alignment materials, tft array substrate and filter are formed light alignment materials layer respectively.In first embodiment of the invention, the material of light alignment materials layer is Linearly polarized polymerization material.The thickness of the light alignment materials layer of the temperature of toast light alignment materials and formation needs to determine according to actual conditions.

Step S14, form first alignment film with the first orientation with the light alignment materials layer that the first light irradiates transmission area inside described tft array substrate to comprise: shade mask plate above described tft array substrate, echo area on described mask plate shade tft array substrate, exposes transmission area; To irradiate the light alignment materials layer on described tft array substrate with described mask plate for mask with the first light, form first alignment film with the first orientation in transmission area.Form first alignment film with the first orientation with the alignment materials that the first light irradiates transmission area inside described filter to comprise: shade mask plate above described filter, the echo area on described mask plate shade filter, exposes transmission area; To irradiate the light alignment materials layer on described filter with described mask plate for mask with the first light, form first alignment film with the first orientation in transmission area.

Step S15, form second alignment film with the second orientation with the light alignment materials floor that the second light irradiates described tft array substrate inner reflection district to comprise: shade mask plate above described tft array substrate, transmission area on described mask plate shade tft array substrate, exposes echo area; To irradiate the light alignment materials layer on described tft array substrate with described mask plate for mask with the second light, form second alignment film with the second orientation in echo area.Form second alignment film with the second orientation with the light alignment materials floor that the second light irradiates described filter inner reflection district to comprise: shade mask plate above described filter, the transmission area on described mask plate shade filter, exposes echo area; To irradiate the light alignment materials layer on described filter with described mask plate for mask with the second light, form second alignment film with the second orientation in echo area.

Step S16, after forming the first alignment film and the second alignment film, forms liquid crystal layer and tft array substrate and described filter is combined.Liquid crystal molecule in liquid crystal layer arranges according to the alignment direction of the first alignment film and the second alignment film, arranges, arrange in echo area according to the second orientation in transmission area according to the first orientation.The method forming liquid crystal layer and tft array substrate and described filter are combined is the known technology of those skilled in the art, does not repeat at this.

Form the first polaroid, the order of the second polaroid can exchange with being formed the order of liquid crystal layer, after namely can forming the first polaroid, the second polaroid, then form liquid crystal layer.

Figure 18 is the formation method flow schematic diagram of the IPS/FFS type display panels of the present invention of the second specific embodiment, and with reference to Figure 18, the formation method of the half-reflection and half-transmission IPS/FFS type display panels of the present invention second specific embodiment comprises:

Step S21, provides tft array substrate and filter, and in each pixel cell of transmission area, the pixel electrode of transmission area and/or the public electrode of transmission area are strip shaped electric poles; In each pixel cell of echo area, described tft array substrate comprises pixel electrode and public electrode, the pixel electrode of echo area and/or the public electrode of echo area are strip shaped electric poles, have predetermined angle between the strip shaped electric poles of transmission area and the strip shaped electric poles of echo area;

Step S22, forms the first polaroid outside described tft array substrate, forms the second polaroid outside described filter, and the angle between the polarization direction of described first polaroid and the polarization direction of the second polaroid is 90 degree;

Step S23, in transmission area and echo area, forms the first smooth alignment materials layer respectively inside described tft array substrate He inside filter;

Step S24, irradiates described first smooth alignment materials layer with the first light and forms first alignment film with the first orientation;

Step S25, in echo area, forms the second smooth alignment materials layer inside described tft array substrate or inside described filter;

Step S26, irradiate described second smooth alignment materials layer with the second light and form second alignment film with the second orientation, the first orientation is identical with the direction of the second orientation, and described second alignment film is π/4 phase retardation film;

Step S27, after forming the first alignment film and the second alignment film, form liquid crystal layer and tft array substrate and described filter combined, and ensureing to make described display panels thick identical with the box of transmission area in echo area, described box is thick has predetermined value; Described predetermined angle and described predetermined value are guaranteed to realize display in echo area and transmission area simultaneously.

The formation method of this second embodiment defines the display panel of above 4th embodiment, the 5th embodiment and the 6th embodiment.

Below each step is described in detail

Step S21:

When tft array substrate is the tft array substrate 10c of the 4th embodiment, the formation method of this tft array substrate 10c is identical with the formation method of the tft array substrate of the 3rd embodiment, just when forming the public electrode be positioned on passivation layer, need to adopt the mask plate different with the 3rd embodiment, the strip public electrode of transmission area formed and the strip public electrode of echo area, have predetermined angle D between the strip public electrode of transmission area and the strip public electrode of echo area.

When tft array substrate is the tft array substrate of the 5th embodiment, its formation method is identical with the formation method of the tft array substrate of the first embodiment just when forming the pixel electrode of strip, need to adopt the mask plate different with the first embodiment, form the strip pixel electrode of transmission area and the strip pixel electrode of echo area, between the strip pixel electrode of transmission area and the strip pixel electrode of echo area, there is predetermined angle D.

When tft array substrate is the tft array substrate of the 6th embodiment, its formation method is identical with the formation method of the tft array substrate of the second embodiment just when forming the pixel electrode of strip, need to adopt the mask plate different with the second embodiment, form the strip pixel electrode of transmission area and the strip pixel electrode of echo area, between the strip pixel electrode of transmission area and the strip pixel electrode of echo area, there is predetermined angle D.When the location swap of pixel electrode and public electrode, when public electrode is strip shaped electric poles, when forming the public electrode of strip, need to adopt the mask plate different with the second embodiment, form the strip public electrode of transmission area and the strip public electrode of echo area, between the strip public electrode of transmission area and the strip public electrode of echo area, there is predetermined angle D.

Step S23, in transmission area and echo area, forms the first smooth alignment materials layer respectively inside described tft array substrate He inside filter.Concrete grammar is: drip burnish gilding alignment materials respectively at tft array substrate and filter; Baking sizing is carried out to described smooth alignment materials, tft array substrate and filter are formed the first smooth alignment materials layer respectively.In first embodiment of the invention, the material of the first smooth alignment materials layer is liquid crystal polymer material.Wherein, form the thickness of the first smooth alignment materials layer, need to determine according to actual conditions to the baking temperature of light alignment materials.

Step S24, directly irradiating the first smooth alignment materials layer on described tft array plate, on filter with the first light, forming first alignment film with the first orientation, without the need to using mask plate.

Step S25, only form the second smooth alignment materials layer inside the tft array substrate of echo area or inside described filter, concrete grammar is: in echo area, drips burnish gilding alignment materials respectively at tft array substrate and filter; Baking sizing is carried out to described smooth alignment materials, tft array substrate and filter are formed the second smooth alignment materials layer respectively.The material of the second smooth alignment materials layer is liquid crystal polymer material.Wherein, form the thickness of the second smooth alignment materials layer, need to determine according to actual conditions to the baking temperature of light alignment materials.

Step S26, concrete grammar is: use mask plate to block transmission area, expose echo area; Irradiate described second smooth alignment materials layer with the second light, form second alignment film with the second orientation.

Form the first polaroid, the order of the second polaroid can exchange with being formed the order of liquid crystal layer, after namely can forming the first polaroid, the second polaroid, then form liquid crystal layer.

Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection domain of technical solution of the present invention.

Claims (37)

1. an IPS/FFS type display panels, is characterized in that, described display panel has multiple pixel cell, and each pixel cell comprises transmission area and echo area; Comprise:

The tft array substrate be oppositely arranged, filter and the liquid crystal layer between tft array substrate and filter;

In each pixel cell, described tft array substrate comprises pixel electrode and public electrode, and described pixel electrode and/or described public electrode are strip shaped electric poles;

Outside described tft array substrate, have the first polaroid, have the second polaroid outside described filter, the angle between the polarization direction of described first polaroid and the polarization direction of the second polaroid is 90 degree;

In transmission area, inside described tft array substrate with inside described filter, first alignment film with the first orientation is set respectively;

In echo area, inside described tft array substrate with inside described filter, second alignment film with the second orientation is set respectively, between described first orientation and the second orientation, there is predetermined angle;

Described display panels is thick identical with the box of transmission area in echo area, and described box is thick has predetermined value, and described predetermined angle and described predetermined value are guaranteed to realize display in echo area and transmission area simultaneously.

2. IPS/FFS type display panels as claimed in claim 1, it is characterized in that, the angle between the polarization direction of described first alignment film and described first polaroid is 0.

3. IPS/FFS type display panels as claimed in claim 1, it is characterized in that, the material of described first alignment film and the second alignment film is Linearly polarized polymerization material.

4. IPS/FFS type display panels as claimed in claim 1, it is characterized in that, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier, the grid of described public electrode and described TFT switch is positioned at same layer;

Cover the passivation layer of described TFT switch and described transparency carrier;

Described pixel electrode is positioned on described passivation layer, and described pixel electrode is strip shaped electric poles, and the drain electrode of described pixel electrode and TFT switch electrical connection;

In echo area, also comprise reflecting electrode, described reflecting electrode covers described pixel electrode and passivation layer.

5. IPS/FFS type display panels as claimed in claim 1, it is characterized in that, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier, the grid of described pixel electrode and described TFT switch is positioned at same layer, the drain electrode electrical connection of described pixel electrode and described TFT switch;

Cover the passivation layer of described TFT switch and described transparency carrier;

Described public electrode is positioned on described passivation layer, and described public electrode is strip shaped electric poles;

In echo area, also comprise reflecting electrode, described reflecting electrode covers described public electrode and passivation layer.

6. IPS/FFS type display panels as claimed in claim 1, it is characterized in that, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier;

Cover the passivation layer of described TFT switch and described transparency carrier;

Described pixel electrode and public electrode are all positioned on described passivation layer, and described pixel electrode and public electrode are strip shaped electric poles, and described pixel electrode and public electrode are spaced;

In echo area, also comprise reflecting electrode, described reflecting electrode covers described pixel electrode, public electrode and passivation layer.

7. IPS/FFS type display panels as claimed in claim 1, it is characterized in that, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier; Described TFT switch comprises: grid, covers the gate dielectric layer of described grid and transparency carrier, is positioned at the active area on described gate dielectric layer, to be positioned on described active area and to be positioned at source electrode and the drain electrode of both sides, active area;

In transmission area, described pixel electrode is positioned on described gate dielectric layer, and is electrically connected with the drain electrode of described TFT switch; In echo area, also comprise reflecting electrode, described reflecting electrode serves as the pixel electrode of echo area, and described reflecting electrode to be positioned on described gate dielectric layer and to be electrically connected with the drain electrode of described TFT switch;

Cover the passivation layer of described TFT switch, reflecting electrode and pixel electrode;

Described public electrode is positioned on described passivation layer, and described public electrode is strip shaped electric poles.

8. IPS/FFS type display panels as claimed in claim 7, it is characterized in that, described reflecting electrode is electrically connected by the drain electrode of described pixel electrode with TFT switch.

9. an IPS/FFS type display panels, is characterized in that, described display panel has multiple pixel cell, and each pixel cell comprises transmission area and echo area; Comprise:

The tft array substrate be oppositely arranged, filter and the liquid crystal layer between tft array substrate and filter;

In each pixel cell of transmission area, described tft array substrate comprises pixel electrode and public electrode, and the pixel electrode of transmission area and/or public electrode are strip shaped electric poles;

In each pixel cell of echo area, described tft array substrate comprises pixel electrode and public electrode, and the pixel electrode of echo area and/or this public electrode are strip shaped electric poles; Between the strip shaped electric poles of transmission area and the strip shaped electric poles of echo area, there is predetermined angle;

Outside described tft array substrate, have the first polaroid, have the second polaroid outside described filter, the angle between the polarization direction of described first polaroid and the polarization direction of the second polaroid is 90 degree;

In transmission area and echo area, inside described tft array substrate and the inner side of described filter arranges first alignment film with the first orientation respectively;

In echo area, also arrange second alignment film with the second orientation inside described tft array substrate or inside described filter, the first orientation is identical with the direction of the second orientation, and described second alignment film is π/4 phase retardation film;

Described display panels is thick identical with the box of transmission area in echo area, and described box is thick has predetermined value, and described predetermined angle and described predetermined value are guaranteed to realize display in echo area and transmission area simultaneously.

10. IPS/FFS type display panels as claimed in claim 9, it is characterized in that, the angle between the polarization direction of described first alignment film and described first polaroid is 0.

11. IPS/FFS type display panels as claimed in claim 9, is characterized in that, the material of described first alignment film and the second alignment film is liquid crystal polymer material.

12. IPS/FFS type display panels as claimed in claim 9, it is characterized in that, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier, the grid of the public electrode of echo area, the public electrode of transmission area and described TFT switch is positioned at same layer;

Cover the passivation layer of described TFT switch and described transparency carrier;

The pixel electrode of transmission area, the pixel electrode of echo area are positioned on described passivation layer, the pixel electrode of transmission area, the pixel electrode of echo area are strip shaped electric poles, and the drain electrode of the pixel electrode of described transmission area, the pixel electrode of echo area and TFT switch electrical connection;

In echo area, also comprise reflecting electrode, described reflecting electrode covers pixel electrode and the passivation layer of echo area.

13. IPS/FFS type display panels as claimed in claim 9, it is characterized in that, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier, the grid of the pixel electrode of transmission area, the pixel electrode of echo area and described TFT switch is positioned at same layer, the drain electrode electrical connection of the pixel electrode of transmission area, the pixel electrode of echo area and described TFT switch;

Cover the passivation layer of described TFT switch and described transparency carrier;

The public electrode of transmission area, the public electrode of echo area are positioned on described passivation layer, and the public electrode of transmission area, the public electrode of echo area are strip shaped electric poles;

In echo area, also comprise reflecting electrode, described reflecting electrode covers public electrode and the passivation layer of echo area.

14. IPS/FFS type display panels as claimed in claim 9, it is characterized in that, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier;

Cover the passivation layer of described TFT switch and described transparency carrier,

The public electrode of the pixel electrode of transmission area, the pixel electrode of echo area, transmission area, the public electrode of echo area are all positioned on described passivation layer; The pixel electrode of transmission area, the public electrode of transmission area are strip shaped electric poles and are spaced, and the pixel electrode of echo area, the public electrode of echo area are strip shaped electric poles and are spaced;

In echo area, also comprise reflecting electrode, described reflecting electrode covers the pixel electrode of echo area, the public electrode of echo area and passivation layer.

15. IPS/FFS type display panels as claimed in claim 9, it is characterized in that, in each pixel cell, described tft array substrate also comprises:

Transparency carrier;

Be positioned at the TFT switch on described transparency carrier; Described TFT switch comprises: grid, covers the gate dielectric layer of described grid and transparency carrier, is positioned at the active area on described gate dielectric layer, to be positioned on described active area and to be positioned at source electrode and the drain electrode of both sides, active area;

The pixel electrode of transmission area, the pixel electrode of echo area are positioned on described gate dielectric layer, and are electrically connected with the drain electrode of described TFT switch, and the pixel electrode of echo area serves as reflecting electrode;

Cover the passivation layer of described TFT switch, the pixel electrode of transmission area and the pixel electrode of echo area;

The public electrode of transmission area, the public electrode of echo area are positioned on described passivation layer, and the public electrode of transmission area, the public electrode of echo area are strip shaped electric poles.

16. IPS/FFS type display panels as claimed in claim 15, is characterized in that, the pixel electrode of echo area is electrically connected with the drain electrode of TFT switch by the pixel electrode of transmission area.

The formation method of 17. 1 kinds of IPS/FFS type display panels, it is characterized in that, display panel has multiple pixel cell, each pixel cell comprises transmission area and echo area; Comprise:

There is provided tft array substrate and filter, in each pixel cell, described tft array substrate comprises pixel electrode and public electrode, and described pixel electrode and/or described public electrode are strip shaped electric poles;

Outside described tft array substrate, form the first polaroid, form the second polaroid outside described filter, the angle between the polarization direction of described first polaroid and the polarization direction of the second polaroid is 90 degree;

Light alignment materials layer is formed respectively inside described tft array substrate He inside filter;

The light alignment materials layer irradiating transmission area inside transmission area and filter inside described tft array substrate with the first light forms first alignment film with the first orientation;

The light alignment materials floor irradiating described tft array substrate inner reflection district and filter inner reflection district with the second light forms second alignment film with the second orientation, has predetermined angle between described first orientation and the second orientation;

After forming the first alignment film and the second alignment film, form liquid crystal layer and tft array substrate and described filter combined, and ensureing to make described display panels thick identical with the box of transmission area in echo area, described box is thick has predetermined value; Described predetermined angle and described predetermined value are guaranteed to realize display in echo area and transmission area simultaneously.

The formation method of 18. IPS/FFS type display panels as claimed in claim 17, it is characterized in that, the angle between the polarization direction of described first alignment film and described first polaroid is 0.

The formation method of 19. IPS/FFS type display panels as claimed in claim 17, it is characterized in that, described smooth alignment materials is Linearly polarized polymerization material.

The formation method of 20. IPS/FFS type display panels as claimed in claim 17, is characterized in that, the light alignment materials layer that described use first light irradiates transmission area inside described tft array substrate forms first alignment film with the first orientation and comprises:

Use mask plate blocks the echo area on tft array substrate, exposes transmission area;

Irradiate the light alignment materials layer inside described tft array substrate with the first light, form first alignment film with the first orientation in transmission area.

The formation method of 21. IPS/FFS type display panels as claimed in claim 17, is characterized in that, the alignment materials that described use first light irradiates transmission area inside described filter forms first alignment film with the first orientation and comprises:

Use the echo area on mask plate shield filter, expose transmission area;

Irradiate the light alignment materials layer inside described filter with the first light, form first alignment film with the first orientation in transmission area.

The formation method of 22. IPS/FFS type display panels as claimed in claim 17, is characterized in that, the light alignment materials floor that described use second light irradiates described tft array substrate inner reflection district forms second alignment film with the second orientation and comprises:

Use the transmission area on mask plate shield tft array substrate, expose echo area;

Irradiate the light alignment materials layer inside described tft array substrate with the second light, form second alignment film with the second orientation in echo area.

The formation method of 23. IPS/FFS type display panels as claimed in claim 17, is characterized in that, the light alignment materials floor that described use second light irradiates described filter inner reflection district forms second alignment film with the second orientation and comprises:

Use the transmission area on mask plate shade filter, expose echo area;

Irradiate the light alignment materials layer inside described filter with the second light, form second alignment film with the second orientation in echo area.

The formation method of 24. IPS/FFS type display panels as claimed in claim 17, is characterized in that, forms light alignment materials layer respectively and comprise inside described tft array substrate and filter:

Burnish gilding alignment materials is dripped respectively at described tft array substrate and filter;

Baking sizing is carried out to described smooth alignment materials, tft array substrate and filter are formed light alignment materials layer respectively.

The formation method of 25. IPS/FFS type display panels as claimed in claim 17, it is characterized in that, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed TFT switch and public electrode, and the grid of described public electrode and described TFT switch is positioned at same layer;

Form passivation layer, cover described TFT switch and described transparency carrier;

Described passivation layer forms described pixel electrode, and described pixel electrode is strip shaped electric poles, and the drain electrode of described pixel electrode and TFT switch electrical connection;

In echo area, form reflecting electrode, cover described pixel electrode and passivation layer.

The formation method of 26. IPS/FFS type display panels as claimed in claim 17, it is characterized in that, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed TFT switch and pixel electrode, and the grid of described pixel electrode and described TFT switch is positioned at same layer, the drain electrode electrical connection of described pixel electrode and described TFT switch;

Form passivation layer, cover described TFT switch and described transparency carrier;

Described passivation layer forms public electrode, and described public electrode is strip shaped electric poles;

In echo area, form reflecting electrode, cover described public electrode and passivation layer.

The formation method of 27. IPS/FFS type display panels as claimed in claim 17, it is characterized in that, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed TFT switch;

Form passivation layer, cover described TFT switch and described transparency carrier;

Described passivation layer is formed pixel electrode and public electrode, and described pixel electrode and public electrode are strip shaped electric poles, and described pixel electrode and public electrode are spaced;

In echo area, form reflecting electrode, cover described pixel electrode, public electrode and passivation layer.

The formation method of 28. IPS/FFS type display panels as claimed in claim 17, it is characterized in that, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed the grid of TFT switch;

Form gate dielectric layer, cover described grid and described transparency carrier;

Described gate dielectric layer is formed the active area of TFT switch, the pixel electrode of transmission area, the reflecting electrode of echo area, and form the source electrode of TFT switch, drain electrode on the active area, described reflecting electrode, described pixel electrode are electrically connected with the drain electrode of described TFT switch; Described reflecting electrode serves as the pixel electrode of echo area;

Form passivation layer, cover described TFT switch, reflecting electrode and pixel electrode;

Described passivation layer forms public electrode, and described public electrode is strip shaped electric poles.

The formation method of 29. IPS/FFS type display panels as claimed in claim 28, it is characterized in that, described reflecting electrode is electrically connected by the drain electrode of described pixel electrode with TFT switch.

The formation method of 30. 1 kinds of IPS/FFS type display panels, it is characterized in that, display panel has multiple pixel cell, each pixel cell comprises transmission area and echo area; Comprise:

Tft array substrate and filter are provided;

In each pixel cell of transmission area, described tft array substrate comprises pixel electrode and public electrode, and the pixel electrode of transmission area and/or the public electrode of transmission area are strip shaped electric poles;

In each pixel cell of echo area, described tft array substrate comprises pixel electrode and public electrode, the pixel electrode of echo area and/or the public electrode of echo area are strip shaped electric poles, have predetermined angle between the strip shaped electric poles of transmission area and the strip shaped electric poles of echo area;

Outside described tft array substrate, form the first polaroid, form the second polaroid outside described filter, the angle between the polarization direction of described first polaroid and the polarization direction of the second polaroid is 90 degree;

In transmission area and echo area, inside described tft array substrate He inside filter, form the first smooth alignment materials layer respectively;

Irradiate described first smooth alignment materials layer with the first light and form first alignment film with the first orientation;

In echo area, inside described tft array substrate or inside described filter, form the second smooth alignment materials layer;

Irradiate described second smooth alignment materials layer with the second light and form second alignment film with the second orientation, the first orientation is identical with the direction of the second orientation, and described second alignment film is π/4 phase retardation film;

After forming the first alignment film and the second alignment film, form liquid crystal layer and tft array substrate and described filter combined, and ensureing to make described display panels thick identical with the box of transmission area in echo area, described box is thick has predetermined value; Described predetermined angle and described predetermined value are guaranteed to realize display in echo area and transmission area simultaneously.

The formation method of 31. IPS/FFS type display panels as claimed in claim 30, it is characterized in that, the angle between the polarization direction of described first alignment film and described first polaroid is 0.

The formation method of 32. IPS/FFS type display panels as claimed in claim 30, is characterized in that, the material of described first smooth alignment materials layer, the second smooth alignment materials layer is liquid crystal polymer material.

The formation method of 33. IPS/FFS type display panels as claimed in claim 30, it is characterized in that, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed the public electrode of TFT switch and transmission area, the public electrode of echo area, and the grid of the public electrode of transmission area, the public electrode of echo area and described TFT switch is positioned at same layer;

Form passivation layer, cover described TFT switch and described transparency carrier;

Described passivation layer is formed the pixel electrode of described transmission area, the pixel electrode of echo area, the pixel electrode of transmission area, the pixel electrode of echo area are strip shaped electric poles, and the drain electrode of the pixel electrode of the pixel electrode of transmission area, echo area and TFT switch electrical connection;

In echo area, form reflecting electrode, cover pixel electrode and the passivation layer of echo area.

The formation method of 34. IPS/FFS type display panels as claimed in claim 30, it is characterized in that, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed the pixel electrode of TFT switch and transmission area, the pixel electrode of echo area, the grid of the pixel electrode of transmission area, the pixel electrode of echo area and described TFT switch is positioned at same layer, the drain electrode electrical connection of the pixel electrode of transmission area, the pixel electrode of echo area and described TFT switch;

Form passivation layer, cover described TFT switch and described transparency carrier;

Described passivation layer is formed the public electrode of transmission area, the public electrode of echo area, and the public electrode of transmission area, the public electrode of echo area are strip shaped electric poles;

In echo area, form reflecting electrode, cover public electrode and the passivation layer of described echo area.

The formation method of 35. IPS/FFS type display panels as claimed in claim 30, it is characterized in that, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed TFT switch;

Form passivation layer, cover described TFT switch and described transparency carrier;

Described passivation layer is formed the pixel electrode of transmission area, the pixel electrode of echo area, the public electrode of transmission area, the public electrode of echo area; The pixel electrode of transmission area, the public electrode of transmission area are strip shaped electric poles and are spaced; The pixel electrode of echo area, the public electrode of echo area are strip shaped electric poles and are spaced;

In echo area, form reflecting electrode, cover the pixel electrode of echo area, the public electrode of echo area and passivation layer.

The formation method of 36. IPS/FFS type display panels as claimed in claim 30, it is characterized in that, the formation method of described tft array substrate comprises:

Transparency carrier is provided;

Described transparency carrier is formed the grid of TFT switch;

Form gate dielectric layer, cover described grid and described transparency carrier;

Described gate dielectric layer is formed the active area of TFT switch, the described pixel electrode of transmission area, the pixel electrode of echo area, the pixel electrode of echo area serves as reflecting electrode, described active area is formed the source electrode of TFT switch, drain electrode, and the described pixel electrode of transmission area, the pixel electrode of echo area are electrically connected with the drain electrode of described TFT switch;

Form passivation layer, cover described TFT switch, reflecting electrode and pixel electrode;

Described passivation layer is formed the public electrode of transmission area, the public electrode of echo area, and the public electrode of transmission area, the public electrode of echo area are strip shaped electric poles.

The formation method of 37. IPS/FFS type display panels as claimed in claim 36, is characterized in that, the pixel electrode of echo area is electrically connected with the drain electrode of TFT switch by the pixel electrode of transmission area.