CN103288042A - Nano-scale metamaterial microstructure and preparation method thereof - Google Patents
Nano-scale metamaterial microstructure and preparation method thereof Download PDFInfo
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- CN103288042A CN103288042A CN2012100508147A CN201210050814A CN103288042A CN 103288042 A CN103288042 A CN 103288042A CN 2012100508147 A CN2012100508147 A CN 2012100508147A CN 201210050814 A CN201210050814 A CN 201210050814A CN 103288042 A CN103288042 A CN 103288042A
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Abstract
The invention provides a nano-scale metamaterial microstructure and a preparation method thereof. The preparation method comprises the following steps of: covering a metal film on a binder-coated base plate, and drying the base plate which is then kept dry; coating a layer of photoresist on the surface of the metal film; after a mask plate with a nano-scale line width pattern is aligned with the photoresist, exposing the photoresist by ultraviolet light, and removing the unexposed part of the photoresist; removing the part, outside the microstructure, of the metal film by corrosive liquid, thus obtaining the microstructure with the nano-scale line width on the base plate. According to the invention, the base material which is prepared by a focused ion beam technology and provided with the nano-scale pattern is taken as the mask plate, the metamaterial with the nano-scale microstructure is prepared on a large scale by an etching technology, and the nano-scale metamaterial microstructure is low in cost and simple in technology.
Description
[technical field]
The present invention relates to super material field, relate in particular to super material microstructure of a kind of nanoscale and preparation method thereof.
[background technology]
Super material be grow up over past ten years electromagnetic wave is played the material of modulating action.Super material generally be the micro-structural by some be attached to have certain mechanics, on the substrate that electromagnetism requires, these micro-structurals with specific pattern and material can produce modulating action to the electromagnetic wave through the special frequency channel of its body.This modulating action can make electromagnetic direction, intensity change, even influences the time that electromagnetic wave passes through.In general, when 1/10th quite time of the electromagnetic wavelength of the size of micro-structural and required modulation, the electromagnetic wave of this frequency or certain frequency range centered by this frequency could be by this super material modulation.Light also is a kind of electromagnetic wave, its wavelength is between 300 to 3000 nanometers, if design micro-structural size is between 30 to 300 nanometers, then this super material can be modulated light, projection, reflection and deviation with control light, thus, the super material of nanoscale micro-structural can be used for increasing the generating efficiency of solar cell.
The method for preparing at present nanostructured has beamwriter lithography, Laser Micro-Machining, focused ion beam lithography, film projection lithography.Though above method can be prepared the nanoscale micro-structural, cost height, complex process can not the large tracts of land manufacturings, and micro-structural is more complicated, then more difficult making.
[summary of the invention]
Technical problem to be solved by this invention is: as mask plate, utilize the base material with nano-scale pattern of preparation lithographic technique can prepare the super material with nanoscale micro-structural on a large scale.
The present invention solves the problems of the technologies described above the technical scheme that adopts: the preparation method of the super material microstructure of a kind of nanoscale may further comprise the steps:
A, metallic film is overlayed on the substrate that scribbles binding agent, dry and keep dry;
B, smear one deck photoresist on the metallic film surface;
C, the mask plate that will have a nanoscale live width figure are aimed at photoresist, with ultraviolet photoresist are exposed, and remove unexposed photoresist then;
D, remove metallic film beyond the micro-structural by corrosive liquid again, thereby obtain the micro-structural of nanoscale live width at substrate.
Described preparation technology with mask plate of nanoscale live width figure is:
2.1, on quartz glass evaporation one deck cadmium metal film;
2.2, smear one deck photoresist at metal film;
2.3, with FIB photoresist is exposed, prepare prefabricated figure;
2.4 and then smear one deck lucite at metal film;
2.5, evaporation one deck silver on lucite at last, obtain to have the mask plate of nanoscale live width figure.
The thickness of described metal film is the 10-100 nanometer.
The thickness of described lucite is the 10-80 nanometer.
Described prefabricated figure is I shape or I-shaped derivative type.
It is the ultraviolet of 300nm-400nm that described ultraviolet adopts wavelength.
Described ultraviolet is preferably the ultraviolet that wavelength is 365nm.
Described metallic film is goldleaf, Copper Foil, silver foil or aluminium foil.
Described substrate is ceramic substrate.
Described substrate is the organic resin substrate.
The super material microstructure of a kind of nanoscale comprises above any super material microstructure of nanoscale that described method prepares.
Beneficial effect of the present invention is: the live width of the figure of focused ion beam technology preparation can reach nanoscale, but cost is too high, complex process, the present invention is as mask plate this base material with nano-scale pattern of focused ion beam technology preparation that utilizes, the super material that the large-scale preparation of recycling lithographic technique has the nanoscale micro-structural, cost is low, technology is simple.
[description of drawings]
Fig. 1 is the flow chart of the embodiment of the invention one.
[specific embodiment]
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the present invention, and be not used in restriction the present invention.
The preparation method of the super material microstructure of a kind of nanoscale may further comprise the steps:
A, preparation have the mask plate of nanoscale live width micrographics;
B, metallic film is overlayed on the substrate that scribbles binding agent, dry and keep dry; Metallic film is goldleaf, Copper Foil, silver foil or aluminium foil, and described substrate is the substrate of ceramic substrate, organic resin substrate or other material;
C, smear one deck photoresist on the metallic film surface;
D, the mask plate that will have a nanoscale live width figure are aimed at photoresist, are that the ultraviolet of 300nm-400nm exposes to photoresist with wavelength, remove unexposed photoresist then; The ultraviolet wavelength is preferably 365nm;
E, remove metallic film beyond the micro-structural by corrosive liquid again, thereby obtain the micro-structural of nanoscale live width at substrate.
Described preparation technology with mask plate of nanoscale live width micrographics is:
S1, evaporation one layer thickness is the cadmium metal film of 10-100 nanometer on quartz glass;
S2, apply one deck photoresist at metal film;
S3, with FIB photoresist is exposed, prepare prefabricated figure; This figure can be I shape or I-shaped derivative type;
S4 and then to apply a layer thickness at metal film be the lucite of 10-80 nanometer;
S5, evaporation one deck silver on lucite at last obtain to have the mask plate of nanoscale live width figure.
The live width of the microstructure graph of focused ion beam technology preparation can reach nanoscale, but cost is too high, complex process, the present invention is as mask plate this base material with nano-scale pattern of focused ion beam technology preparation that utilizes, the super material that the large-scale preparation of recycling lithographic technique has the nanoscale micro-structural, cost is low, technology is simple.
Embodiment one: as shown in Figure 1
The preparation method of the super material microstructure of a kind of nanoscale may further comprise the steps:
S1, evaporation one layer thickness is the cadmium metal film of 20 nanometers on quartz glass;
S2, apply one deck photoresist at the cadmium metal film;
S3, with FIB photoresist is exposed, prepare prefabricated I shape figure;
S4 and then to apply a layer thickness at the cadmium metal film be the lucite of 40 nanometers;
S5, evaporation one deck silver on lucite at last obtain to have the mask plate of nanoscale live width figure;
S6, Copper Foil is overlayed on the substrate that scribbles binding agent, dry and keep dry;
S7, smear one deck photoresist at copper foil surface;
S8, the mask plate that step S5 is obtained are aimed at photoresist, are that the ultraviolet of 365nm exposes to photoresist with wavelength, remove unexposed photoresist then;
S9, remove metallic film beyond the micro-structural by corrosive liquid again, thereby obtain the micro-structural of nanoscale live width at substrate.
Should be appreciated that the thickness of cadmium metal film and the thickness of lucite can be selected according to actual needs when preparing above-mentioned mask plate, the THICKNESS CONTROL of cadmium metal film can in the 10-80 nanometer in the THICKNESS CONTROL of 10-100 nanometer, lucite.
Utilize the base material with nano-scale pattern of focused ion beam technology preparation as mask plate, the super material that the large-scale preparation of recycling lithographic technique has the nanoscale micro-structural, cost is low, technology is simple.
Embodiment two:
Embodiment two is with the difference of embodiment one: prefabricated figure can be snowflake type, the snowflake type complex structure, if with this micro-structural of prior art for preparing, not only cost is too high, it mainly is complex process, and the base material of snowflake type pattern with nanoscale live width as mask plate, can utilize the super material that cost is low, the simple lithographic technique of technology is prepared the snowflake type micro-structural on a large scale.
Should be appreciated that prefabricated figure can also be other I shape derivative type.
In the above-described embodiments, only the present invention has been carried out exemplary description, but those skilled in the art can carry out various modifications to the present invention after reading present patent application under the situation that does not break away from the spirit and scope of the present invention.
Claims (11)
1. the preparation method of the super material microstructure of nanoscale is characterized in that: may further comprise the steps:
A, metallic film is overlayed on the substrate that scribbles binding agent, dry and keep dry;
B, smear one deck photoresist on the metallic film surface;
C, the mask plate that will have a nanoscale live width figure are aimed at photoresist, with ultraviolet photoresist are exposed, and remove unexposed photoresist then;
D, remove metallic film beyond the micro-structural by corrosive liquid again, thereby obtain the micro-structural of nanoscale live width at substrate.
2. the preparation method of the super material microstructure of nanoscale according to claim 1, it is characterized in that: described preparation technology with mask plate of nanoscale live width figure is:
2.1, on quartz glass evaporation one deck cadmium metal film;
2.2, smear one deck photoresist at metal film;
2.3, with FIB photoresist is exposed, prepare prefabricated figure;
2.4 and then smear one deck lucite at metal film;
2.5, evaporation one deck silver on lucite at last, obtain to have the mask plate of nanoscale live width figure.
3. the preparation method of the super material microstructure of nanoscale according to claim 2, it is characterized in that: the thickness of described cadmium metal film is the 10-100 nanometer.
4. the preparation method of the super material microstructure of nanoscale according to claim 2, it is characterized in that: the thickness of described lucite is the 10-80 nanometer.
5. the preparation method of the super material microstructure of nanoscale according to claim 2, it is characterized in that: described prefabricated figure is I shape or I-shaped derivative type.
6. the preparation method of the super material microstructure of nanoscale according to claim 1 is characterized in that: it is the ultraviolet of 300nm-400nm that described ultraviolet adopts wavelength.
7. the preparation method of the super material microstructure of nanoscale according to claim 6, it is characterized in that: described ultraviolet is preferably the ultraviolet that wavelength is 365nm.
8. the preparation method of the super material microstructure of nanoscale according to claim 1, it is characterized in that: described metallic film is goldleaf, Copper Foil, silver foil or aluminium foil.
9. the preparation method of the super material microstructure of nanoscale according to claim 1, it is characterized in that: described substrate is ceramic substrate.
10. the preparation method of the super material microstructure of nanoscale according to claim 1, it is characterized in that: described substrate is the organic resin substrate.
11. the super material microstructure of nanoscale is characterized in that: the super material microstructure of nanoscale that comprises any described method preparation of claim 1-10.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109254341A (en) * | 2018-10-31 | 2019-01-22 | 南京奥谱依电子科技有限公司 | Inclined diaphragm of a kind of patterning control and preparation method thereof |
| CN113161414A (en) * | 2021-04-29 | 2021-07-23 | 齐鲁工业大学 | Preparation method of PN micron line |
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| JPH0477738A (en) * | 1990-07-19 | 1992-03-11 | Nec Corp | Manufacture of photomask |
| KR100365727B1 (en) * | 1999-12-09 | 2002-12-26 | 한국전자통신연구원 | Fabrication method for metal nano-wires by using carbon nanotube mask |
| CN1606137A (en) * | 2004-09-02 | 2005-04-13 | 上海交通大学 | Nano etching method based on nano material disposition |
| US7651936B2 (en) * | 2006-12-20 | 2010-01-26 | Dongbu Hitek Co., Ltd. | Method for patterning a semiconductor device |
| CN101726990A (en) * | 2009-12-15 | 2010-06-09 | 中国科学院光电技术研究所 | Silicon mask used for super-diffraction photoetching with line width of below 200 nanometers and manufacturing method thereof |
| CN102134055A (en) * | 2011-02-12 | 2011-07-27 | 中国科学院光电技术研究所 | Manufacturing method for forming metal nanometer structure by utilizing crevice corrosion |
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2012
- 2012-02-29 CN CN201210050814.7A patent/CN103288042B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0477738A (en) * | 1990-07-19 | 1992-03-11 | Nec Corp | Manufacture of photomask |
| KR100365727B1 (en) * | 1999-12-09 | 2002-12-26 | 한국전자통신연구원 | Fabrication method for metal nano-wires by using carbon nanotube mask |
| CN1606137A (en) * | 2004-09-02 | 2005-04-13 | 上海交通大学 | Nano etching method based on nano material disposition |
| US7651936B2 (en) * | 2006-12-20 | 2010-01-26 | Dongbu Hitek Co., Ltd. | Method for patterning a semiconductor device |
| CN101726990A (en) * | 2009-12-15 | 2010-06-09 | 中国科学院光电技术研究所 | Silicon mask used for super-diffraction photoetching with line width of below 200 nanometers and manufacturing method thereof |
| CN102134055A (en) * | 2011-02-12 | 2011-07-27 | 中国科学院光电技术研究所 | Manufacturing method for forming metal nanometer structure by utilizing crevice corrosion |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109254341A (en) * | 2018-10-31 | 2019-01-22 | 南京奥谱依电子科技有限公司 | Inclined diaphragm of a kind of patterning control and preparation method thereof |
| CN113161414A (en) * | 2021-04-29 | 2021-07-23 | 齐鲁工业大学 | Preparation method of PN micron line |
| CN113161414B (en) * | 2021-04-29 | 2023-04-14 | 齐鲁工业大学 | Preparation method of PN micron line |
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