CN103274372A - Cadmium tellude preparation method - Google Patents
Cadmium tellude preparation method Download PDFInfo
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- CN103274372A CN103274372A CN2013102412798A CN201310241279A CN103274372A CN 103274372 A CN103274372 A CN 103274372A CN 2013102412798 A CN2013102412798 A CN 2013102412798A CN 201310241279 A CN201310241279 A CN 201310241279A CN 103274372 A CN103274372 A CN 103274372A
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Abstract
The invention provides a cadmium tellude preparation method, which comprises steps of primary synthesis and secondary synthesis. The primary synthesis comprises the steps: putting tellurium and cadmium which are arranged in a staggered and up-and-down manner into a first graphite boat in a layered manner, putting the first graphite boat in a first quartz tube, and then placing the first quartz tube in a first synthesis furnace; filling first protective gas to discharge air in the first quartz tube; conducting three-section temperature increment, filling the first protective gas into the first section, and filling a first reducing gas into the second and the third section; filling the first reducing gas after the completion of synthesis reaction, and cooling down to an room temperature; and obtaining a first synthetic product. The secondary synthesis comprises the steps: putting the first synthetic product into a second graphite boat after being crushed, placing the second graphite boat into a second quartz tube, and placing the quartz tube into a second synthesis furnace; filling a second protective gas to discharge air in the second quartz tube; conducting two-section temperature increment, filling the second protective gas into the first section, and filling a second reducing gas into the second section; and after the completion of synthesis reaction, stopping heating, filling the second reducing gas, cooling down to the room temperature, so as to obtain a second synthetic product. Due to adoption of the method provided by the invention, the raw materials can be prevented from oxidation and being in contact with poisonous substances.
Description
Technical field
The present invention relates to a kind of preparation method of synthetic materials, relate in particular to a kind of preparation method of cadmium telluride.
Background technology
The preparation method of cadmium telluride is synthetic after being mostly to adopt cadmium powder and tellurium powder to mix at present, wherein on November 20th, 2002 Granted publication Chinese patent CN1380246A a kind of preparation method of cadmium antimonide powder is disclosed, this method adopts cadmium powder and tellurium powder synthetic in the crucible of vacuum condition, synthetic after through grinding anneal; The Chinese patent CN101125679A of Granted publication disclosed a kind of preparation method of high-purity cadmium telluride on February 20th, 2008, method is that 5N tellurium and 5N cadmium are mixed according to the proportioning of mol ratio 1:1, pellet is pulverized or ground to form to compound, present method is being mixed or is being ground to form the probability that can increase the oxidation of cadmium powder in the process of pellet, also increased the probability that the operator contacts the cadmium powder, therefore human body there is certain injury, simultaneously if adopt the cadmium powder to synthesize cadmium telluride, the wherein easy oxidation of cadmium powder, and the cost of production cadmium powder is than higher; The Chinese patent CN101734630A of Granted publication disclosed a kind of preparation method of high-purity cadmium telluride on June 16th, 2010, this method is that 5N cadmium material and 5N tellurium material are placed in the airtight silica tube after utter misery is handled, with the cadmium material with the tellurium material is divided into N-1 part respectively according to 1:1.1～1.15 and N part alternately is positioned in the silica tube, and at first and last what place is the tellurium material, adopt the method for High Temperature High Pressure to synthesize after the deoxidation, because the condition of this method is High Temperature High Pressure, therefore there is certain danger in building-up process, rate ratio is less, and the industrialization cost is than higher.
Summary of the invention
In view of the problem that background technology exists, the object of the present invention is to provide a kind of preparation method of cadmium telluride, it can avoid raw material oxidized and avoid contacting objectionable impurities.
The object of the present invention is to provide a kind of preparation method of cadmium telluride, it can once synthesize with secondary synthetic under normal pressure.
The object of the present invention is to provide a kind of preparation method of cadmium telluride, the production cost that it can be lower.
To achieve these goals, the invention provides a kind of preparation method of cadmium telluride, it comprises synthesis step and secondary synthesis step.
One time synthesis step comprises: 5N cadmium grain is placed in first graphite boat according to interlocking from top to bottom to divide from the relative higher tellurium grain with fusing point of the relatively low cadmium grain of lowest layer fusing point with 5N tellurium grain, and wherein the lowest layer is the cadmium grain; Charged first graphite boat is positioned in first silica tube; First silica tube that is placed with first graphite boat is positioned in first synthetic furnace; Feed the air in the first protective gas emptying, first silica tube; Air in first silica tube is by after the first protective gas emptying, and first synthetic furnace adopts three sections heating modes, and first section feeds first protective gas, and second section and the 3rd section feeding first reducing gas; After the building-up reactions, first synthetic furnace stops heating and is cooled to room temperature, continues to feed first reducing gas in the temperature-fall period; And from first silica tube, take out first graphite boat, in first graphite boat, take out a synthetics again.
The secondary synthesis step comprises: the cadmium telluride crystal grain that synthetics is crushed to specified dimension; The cadmium telluride crystal grain that fragmentation is good is encased in second graphite boat; Second graphite boat that the good cadmium telluride crystal grain of fragmentation is housed is positioned in second silica tube; Second silica tube that is placed with second graphite boat is positioned in second synthetic furnace; Feed the air in the second protective gas emptying, second silica tube; Air in second silica tube is by after the second protective gas emptying, and second synthetic furnace adopts two sections heating modes, and first section feeds second protective gas, second section feeding second reducing gas; After the building-up reactions, second synthetic furnace stops heating and is cooled to room temperature, continues to feed second reducing gas in the temperature-fall period; And from second silica tube, take out second graphite boat, in second graphite boat, take out the secondary synthetics again.
Beneficial effect of the present invention is as follows:
The preparation method of the cadmium telluride that the present invention adopts does not contact objectionable impurities in preparation process, reduced the injury of cadmium grain to human body, and reduced the oxidized probability of cadmium grain;
This method is reacted under normal pressure, the safety performance height; Adopt cadmium grain and tellurium grain cheaply in process of production, reduced the production cost of raw material;
The cadmium telluride of preparation can access macrocrystal near the chemical theory proportioning, and stable performance can be satisfied the demand of the various granularities of client.
Embodiment
Describe preparation method and the embodiment of the cadmium telluride according to the present invention below in detail.
Preparation method according to cadmium telluride of the present invention at first is described.
Comprise synthesis step and secondary synthesis step according to the preparation method of cadmium telluride of the present invention.
Wherein, one time synthesis step comprises: 5N cadmium grain is placed in first graphite boat according to interlocking from top to bottom to divide from the relative higher tellurium grain with fusing point of the relatively low cadmium grain of lowest layer fusing point with 5N tellurium grain, and wherein the lowest layer is the cadmium grain; Charged first graphite boat is positioned in first silica tube; First silica tube that is placed with first graphite boat is positioned in first synthetic furnace; Feed the air in the first protective gas emptying, first silica tube; Air in first silica tube is by after the first protective gas emptying, and first synthetic furnace adopts three sections heating modes, and first section feeds first protective gas, and second section and the 3rd section feeding first reducing gas; After the building-up reactions, first synthetic furnace stops heating and is cooled to room temperature, continues to feed first reducing gas in the temperature-fall period; And from first silica tube, take out first graphite boat, in first graphite boat, take out a synthetics again.
Wherein, the secondary synthesis step comprises: the cadmium telluride crystal grain that synthetics is crushed to specified dimension; The cadmium telluride crystal grain that fragmentation is good is encased in second graphite boat; Second graphite boat that the good cadmium telluride crystal grain of fragmentation is housed is positioned in second silica tube; Second silica tube that is placed with second graphite boat is positioned in second synthetic furnace; Feed the air in the second protective gas emptying, second silica tube; Air in second silica tube is by after the second protective gas emptying, and second synthetic furnace adopts two sections heating modes, and first section feeds second protective gas, second section feeding second reducing gas; After the building-up reactions, second synthetic furnace stops heating and is cooled to room temperature, continues to feed second reducing gas in the temperature-fall period; And from second silica tube, take out second graphite boat, in second graphite boat, take out the secondary synthetics again.
In the preparation method according to cadmium telluride of the present invention, preferably, in synthesis step, 5N cadmium grain is of a size of 1～10mm, and 5N tellurium grain is of a size of 1～10mm.
In the preparation method according to cadmium telluride of the present invention, preferably, in synthesis step, the blending ratio of 5N tellurium powder and 5N cadmium powder is mol ratio 1:1.
In the preparation method according to cadmium telluride of the present invention, in a described synthesis step, three sections heating modes can be: first section temperature rise rate is 2～15 ℃/min, is warming up to 150～250 ℃ from room temperature, insulation 1.5～5h feeds first protective gas in first section; Second section temperature rise rate is 2～15 ℃/min, continues to be warming up to 350～500 ℃, and insulation 10～90min feeds first reducing gas in second section; And the 3rd section temperature rise rate is 5～20 ℃/min, continues to be warming up to 850～1000 ℃, and insulation 0.5～3h feeds first reducing gas in the 3rd section.
In the preparation method according to cadmium telluride of the present invention, preferably, in described secondary synthesis step, described specified dimension with a synthetics fragmentation is 1～10mm.
In the preparation method according to cadmium telluride of the present invention, in described secondary synthesis step, two sections heating modes can be: first section temperature rise rate is 8～25 ℃/min, rises to 350～450 ℃ from room temperature, insulation 10～60min feeds second protective gas in first section; And second section temperature rise rate is 2～10 ℃/min, continues to be warming up to 850～1000 ℃, and insulation 2～20h feeds second reducing gas in second section.
In the preparation method according to cadmium telluride of the present invention, first graphite boat in the described synthesis step is the process Water Quenching before charging; Second graphite boat in the described secondary synthesis step is the process Water Quenching before charging; In the described synthesis step with described secondary synthesis step in first protective gas and second protective gas can be identical or different, be preferably first protective gas and second protective gas is nitrogen; In the described synthesis step with described secondary synthesis step in first reducing gas and second reducing gas can just as or different, be preferably first reducing gas and second reducing gas is hydrogen.
In the preparation method according to cadmium telluride of the present invention, first synthetic furnace in the described synthesis step is same or different synthetic furnaces with second synthetic furnace in the described secondary synthesis step; First graphite boat in the described synthesis step is same or different graphite boats with second graphite boat in the described secondary synthesis step, and when first graphite boat in the described synthesis step and second graphite boat in the described secondary synthesis step are same graphite boat, in described secondary synthesis step, before second graphite boat uses, second graphite boat is carried out clean; Second silica tube in the described synthesis step is same or different silica tubes with second silica tube in described secondary synthesis step, and when second silica tube in the described synthesis step and second silica tube in described secondary synthesis step are same silica tube, in described secondary synthesis step, before using, second silica tube carries out clean.
In the preparation method according to cadmium telluride of the present invention, also comprise step: after obtaining the secondary synthetics, carry out fragmentation and screening, to obtain varigrained secondary synthetics.
Secondly explanation is according to the preparation method's of cadmium telluride of the present invention embodiment.
Embodiment 1
A a: synthesis step
To be of a size of 1mm5N cadmium grain and be of a size of 1mm5N tellurium grain and be divided into 5 parts and 5 parts respectively according to mol ratio 1:1;
5N cadmium grain and 5N tellurium grain are placed in first graphite boat in order, placement places the lowest layer for first part of relatively low cadmium grain of fusing point in proper order, the higher relatively tellurium grain of fusing point is positioned on first part of cadmium grain for first part, place second part of cadmium grain, second part of tellurium grain, the 3rd part of cadmium grain, the 4th part of tellurium grain then, the rest may be inferred, staggered layer-by-layer distribution; First graphite boat carried out Water Quenching before charging;
Charged first graphite boat is positioned in first silica tube, first graphite boat is positioned over as far as possible the middle part of first silica tube;
First silica tube that is placed with first graphite boat is positioned in first synthetic furnace;
Feed first protective gas with the air emptying in first silica tube, wherein first protective gas is nitrogen;
After treating that the interior air of first silica tube is drained, adopt three sections heating modes to carry out hyperthermic treatment: first section temperature rise rate is 2 ℃/min, is warming up to 150 ℃ from room temperature, insulation 5h, and this process feeds the first protective gas nitrogen and protects; Second section temperature rise rate is 2 ℃/min, continues to be warming up to 500 ℃, insulation 90min, and this process feeds the first reducing gas hydrogen; The 3rd section temperature rise rate is 20 ℃/min, continues to be warming up to 1000 ℃, and insulation 3h stops heating;
After the building-up reactions, first synthetic furnace stops heating and naturally cools to room temperature, and this process continues to feed the first reducing gas hydrogen;
From first synthetic furnace, take out first silica tube, from first silica tube, take out first graphite boat again, in first graphite boat, take out a synthetics then.
B: secondary synthesis step
A synthetics is crushed to the cadmium telluride crystal grain that particle diameter is 1mm;
The cadmium telluride crystal grain that fragmentation is good is packed in second graphite boat, and second graphite boat carries out Water Quenching before charging;
Second graphite boat is positioned in second silica tube;
Second silica tube that second graphite boat is housed is positioned in second synthetic furnace;
Adopt second protective gas with the air emptying in second silica tube, wherein second protective gas is nitrogen;
After treating that the interior air of second silica tube is drained, adopt two sections heating modes to carry out hyperthermic treatment: 8 ℃/min of first section temperature rise rate, be warming up to 350 ℃ from normal temperature, insulation 10min, this process feeds the second protective gas nitrogen; Second section temperature rise rate is 2 ℃/min, continues to be warming up to 850 ℃, insulation 20h, and this process feeds the second reducing gas hydrogen;
After the building-up reactions, second synthetic furnace stops heating and naturally cools to room temperature, and this process continues to feed the second reducing gas hydrogen, obtains secondary synthetics cadmium telluride;
The broken and screening of secondary synthetics cadmium telluride process with obtaining obtains varigrained 5N secondary synthetics at last.
In the synthesis step and secondary synthesis step in embodiment 1, first synthetic furnace and second synthetic furnace are same synthetic furnace, first graphite boat and second graphite boat are same graphite boat, first silica tube and second silica tube are same silica tube, and in the secondary synthesis step, before second graphite boat and the use of second silica tube, carry out clean.
Embodiment 2
A a: synthesis step
To be of a size of 10mm5N cadmium grain and be of a size of 10mm5N tellurium grain and be divided into 12 parts and 12 parts respectively according to mol ratio 1:1;
5N cadmium grain and 5N tellurium grain are placed in first graphite boat in order, placement places the lowest layer for first part of relatively low cadmium grain of fusing point in proper order, the higher relatively tellurium grain of fusing point is positioned on first part of cadmium grain for first part, place second part of cadmium grain, second part of tellurium grain, the 3rd part of cadmium grain, the 4th part of tellurium grain then, the rest may be inferred, staggered layer-by-layer distribution; First graphite boat carried out Water Quenching before charging;
Charged first graphite boat is positioned in first silica tube, first graphite boat is positioned over as far as possible the middle part of first silica tube;
First silica tube that is placed with first graphite boat is positioned in first synthetic furnace;
Feed first protective gas with the air emptying in first silica tube, wherein first protective gas is nitrogen;
After treating that the interior air of first silica tube is drained, adopt three sections heating modes to carry out hyperthermic treatment: first section temperature rise rate is 10 ℃/min, is warming up to 230 ℃ from room temperature, insulation 3h, and this process feeds the first protective gas nitrogen and protects; Second section temperature rise rate is 15 ℃/min, continues to be warming up to 420 ℃, insulation 60min, and this process feeds the first reducing gas hydrogen; The 3rd section temperature rise rate is 17 ℃/min, continues to be warming up to 930 ℃, and insulation 0.5h stops heating;
After the building-up reactions, first synthetic furnace stops heating and naturally cools to room temperature, and this process continues to feed the first reducing gas hydrogen;
From first synthetic furnace, take out first silica tube, from first silica tube, take out first graphite boat again, in first graphite boat, take out a synthetics then.
B: secondary synthesis step
A synthetics is crushed to the cadmium telluride crystal grain that particle diameter is 10mm;
The cadmium telluride crystal grain that fragmentation is good is packed in second graphite boat, and second graphite boat carries out Water Quenching before charging;
Second graphite boat is positioned in second silica tube;
Second silica tube that second graphite boat is housed is positioned in second synthetic furnace;
Adopt second protective gas with the air emptying in second silica tube, wherein second protective gas is nitrogen;
After treating that the interior air of second silica tube is drained, adopt two sections heating modes to carry out hyperthermic treatment: 15 ℃/min of first section temperature rise rate, be warming up to 450 ℃ from normal temperature, insulation 60min, this process feeds the second protective gas nitrogen; Second section temperature rise rate is 8 ℃/min, continues to be warming up to 940 ℃, insulation 10h, and this process feeds the second reducing gas hydrogen;
After the building-up reactions, second synthetic furnace stops heating and naturally cools to room temperature, and this process continues to feed the second reducing gas hydrogen, obtains secondary synthetics cadmium telluride;
The broken and screening of secondary synthetics cadmium telluride process with obtaining obtains varigrained 5N secondary synthetics at last.
In the synthesis step and secondary synthesis step in embodiment 2, first synthetic furnace and second synthetic furnace are same synthetic furnace, first graphite boat and second graphite boat are same graphite boat, first silica tube and second silica tube are same silica tube, and in the secondary synthesis step, before second graphite boat and the use of second silica tube, carry out clean.
Embodiment 3
A a: synthesis step
To be of a size of 5mm5N cadmium grain and be of a size of 7mm5N tellurium grain and be divided into 8 parts and 8 parts respectively according to mol ratio 1:1;
5N cadmium grain and 5N tellurium grain are placed in first graphite boat in order, placement places the lowest layer for first part of relatively low cadmium grain of fusing point in proper order, the higher relatively tellurium grain of fusing point is positioned on first part of cadmium grain for first part, place second part of cadmium grain, second part of tellurium grain, the 3rd part of cadmium grain, the 4th part of tellurium grain then, the rest may be inferred, staggered layer-by-layer distribution; First graphite boat carried out Water Quenching before charging;
Charged first graphite boat is positioned in first silica tube, first graphite boat is positioned over as far as possible the middle part of first silica tube;
First silica tube that is placed with first graphite boat is positioned in first synthetic furnace;
Feed first protective gas with the air emptying in first silica tube, wherein first protective gas is nitrogen;
After treating that the interior air of first silica tube is drained, adopt three sections heating modes to carry out hyperthermic treatment: first section temperature rise rate is 15 ℃/min, is warming up to 250 ℃ from room temperature, insulation 1.5h, and this process feeds the first protective gas nitrogen and protects; Second section temperature rise rate is 10 ℃/min, continues to be warming up to 350 ℃, insulation 10min, and this process feeds the first reducing gas hydrogen; The 3rd section temperature rise rate is 5 ℃/min, continues to be warming up to 850 ℃, and insulation 1.5h stops heating;
After the building-up reactions, first synthetic furnace stops heating and naturally cools to room temperature, and this process continues to feed the first reducing gas hydrogen;
From first synthetic furnace, take out first silica tube, from first silica tube, take out first graphite boat again, in first graphite boat, take out a synthetics then.
B: secondary synthesis step
A synthetics is crushed to the cadmium telluride crystal grain that particle diameter is 7mm;
The cadmium telluride crystal grain that fragmentation is good is packed in second graphite boat, and second graphite boat carries out Water Quenching before charging;
Second graphite boat is positioned in second silica tube;
Second silica tube that second graphite boat is housed is positioned in second synthetic furnace;
Adopt second protective gas with the air emptying in second silica tube, wherein second protective gas is nitrogen;
After treating that the interior air of second silica tube is drained, adopt two sections heating modes to carry out hyperthermic treatment: 25 ℃/min of first section temperature rise rate, be warming up to 380 ℃ from normal temperature, insulation 40min, this process feeds the second protective gas nitrogen; Second section temperature rise rate is 10 ℃/min, continues to be warming up to 1000 ℃, insulation 2h, and this process need feeds the second reducing gas hydrogen;
After the building-up reactions, second synthetic furnace stops heating and naturally cools to room temperature, and this process continues to feed the second reducing gas hydrogen, obtains secondary synthetics cadmium telluride;
The broken and screening of secondary synthetics cadmium telluride process with obtaining obtains varigrained 5N secondary synthetics at last.
In the synthesis step and secondary synthesis step in embodiment 3, first synthetic furnace and second synthetic furnace are same synthetic furnace, first graphite boat and second graphite boat are same graphite boat, first silica tube and second silica tube are same silica tube, and in the secondary synthesis step, before second graphite boat and the use of second silica tube, carry out clean.
Provide test result at last.
Secondary synthetics (being cadmium telluride) product adopts icp ms (ICP-MS) to detect that (manufacturer is PE company, model is: DRC-II), the testing conditions of this equipment is: temperature is 18 ℃-28 ℃, and relative humidity is 30-70%, and cleanliness factor is 1000 grades.Detect principle: the icp ms detection mode: after the element process plasma high-temperature to be measured ionization, enter mass analyzer with the positive charge form, the difference according to the mass ratio is received by detector, produces signal.Signal and this element signal ratio of reference material that element to be measured produces draw constituent content to be measured.
Table 1 provides the test result of embodiment 1-3.
The secondary synthetics test result (PPm) of table 1 embodiment 1-3
From table as can be seen, as seen from Table 1, the cadmium telluride that the present invention obtains reaches 5N purity.
Claims (9)
1. the preparation method of a cadmium telluride comprises:
A synthesis step comprises:
5N cadmium grain is placed in first graphite boat according to interlocking from top to bottom to divide from the relative higher tellurium grain with fusing point of the relatively low cadmium grain of lowest layer fusing point with 5N tellurium grain, and wherein the lowest layer is the cadmium grain;
Charged first graphite boat is positioned in first silica tube;
First silica tube that is placed with first graphite boat is positioned in first synthetic furnace;
Feed the air in the first protective gas emptying, first silica tube;
Air in first silica tube is by after the first protective gas emptying, and first synthetic furnace adopts three sections heating modes, and first section feeds first protective gas, and second section and the 3rd section feeding first reducing gas;
After the building-up reactions, first synthetic furnace stops heating and is cooled to room temperature, continues to feed first reducing gas in the temperature-fall period; And
From first silica tube, take out first graphite boat, in first graphite boat, take out a synthetics again; And
The secondary synthesis step comprises:
Synthetics is crushed to the cadmium telluride crystal grain of specified dimension;
The cadmium telluride crystal grain that fragmentation is good is encased in second graphite boat;
Second graphite boat that the good cadmium telluride crystal grain of fragmentation is housed is positioned in second silica tube;
Second silica tube that is placed with second graphite boat is positioned in second synthetic furnace;
Feed the air in the second protective gas emptying, second silica tube;
Air in second silica tube is by after the second protective gas emptying, and second synthetic furnace adopts two sections heating modes, and first section feeds second protective gas, second section feeding second reducing gas;
After the building-up reactions, second synthetic furnace stops heating and is cooled to room temperature, continues to feed second reducing gas in the temperature-fall period; And
From second silica tube, take out second graphite boat, in second graphite boat, take out the secondary synthetics again.
2. the preparation method of cadmium telluride according to claim 1 is characterized in that, in synthesis step, 5N cadmium grain is of a size of 1～10mm, and 5N tellurium grain is of a size of 1～10mm.
3. the preparation method of cadmium telluride according to claim 1 is characterized in that, in synthesis step, the blending ratio of 5N tellurium grain and 5N cadmium grain is mol ratio 1:1.
4. the preparation method of cadmium telluride according to claim 1 is characterized in that, in a described synthesis step, three sections heating modes are:
First section temperature rise rate is 2～15 ℃/min, is warming up to 150～250 ℃ from room temperature, and insulation 1.5～5h feeds first protective gas in first section;
Second section temperature rise rate is 2～15 ℃/min, continues to be warming up to 350～500 ℃, and insulation 10～90min feeds first reducing gas in second section; And
The 3rd section temperature rise rate is 5～20 ℃/min, continues to be warming up to 850～1000 ℃, and insulation 0.5～3h feeds first reducing gas in the 3rd section.
5. the preparation method of cadmium telluride according to claim 1 is characterized in that, in described secondary synthesis step, described specified dimension with a synthetics fragmentation is 1～10mm.
6. the preparation method of cadmium telluride according to claim 1 is characterized in that, in described secondary synthesis step, two sections heating modes are:
First section temperature rise rate is 8～25 ℃/min, rises to 350～450 ℃ from room temperature, and insulation 10～60min feeds second protective gas in first section; And
Second section temperature rise rate is 2～10 ℃/min, continues to be warming up to 850～1000 ℃, and insulation 2～20h feeds second reducing gas in second section.
7. the preparation method of cadmium telluride according to claim 1 is characterized in that,
First graphite boat in the described synthesis step is the process Water Quenching before charging;
Second graphite boat in the described secondary synthesis step is the process Water Quenching before charging;
In the described synthesis step with described secondary synthesis step in first protective gas and second protective gas can be identical or different, be preferably first protective gas and second protective gas is nitrogen;
In the described synthesis step with described secondary synthesis step in first reducing gas and second reducing gas can just as or different, be preferably first reducing gas and second reducing gas is hydrogen.
8. the preparation method of cadmium telluride according to claim 1 is characterized in that,
First synthetic furnace in the described synthesis step is same or different synthetic furnaces with second synthetic furnace in the described secondary synthesis step;
First graphite boat in the described synthesis step is same or different graphite boats with second graphite boat in the described secondary synthesis step, and when first graphite boat in the described synthesis step and second graphite boat in the described secondary synthesis step are same graphite boat, in described secondary synthesis step, before second graphite boat uses, second graphite boat is carried out clean;
Second silica tube in the described synthesis step is same or different silica tubes with second silica tube in described secondary synthesis step, and when second silica tube in the described synthesis step and second silica tube in described secondary synthesis step are same silica tube, in described secondary synthesis step, before using, second silica tube carries out clean.
9. the preparation method of cadmium telluride according to claim 1 is characterized in that, also comprises step: after obtaining the secondary synthetics, carry out fragmentation and screening, to obtain varigrained secondary synthetics.
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| CN108069456A (en) * | 2017-12-28 | 2018-05-25 | 成都中建材光电材料有限公司 | A kind of preparation method of cadmium telluride |
| CN108069456B (en) * | 2017-12-28 | 2019-10-25 | 成都中建材光电材料有限公司 | A kind of preparation method of cadmium telluride |
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