CN103243298A - Halogen-doped ITO conductive film and preparation method thereof - Google Patents
Halogen-doped ITO conductive film and preparation method thereof Download PDFInfo
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- CN103243298A CN103243298A CN2012100302286A CN201210030228A CN103243298A CN 103243298 A CN103243298 A CN 103243298A CN 2012100302286 A CN2012100302286 A CN 2012100302286A CN 201210030228 A CN201210030228 A CN 201210030228A CN 103243298 A CN103243298 A CN 103243298A
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Abstract
The invention belongs to the field of conductive films and discloses a halogen-doped ITO conductive film and a preparation method thereof. The general chemical formula of the conductive film is In2O3Ax:ySn<4+>; wherein A is a doping element, A is one selected from the group consisting of F, Cl or Br, x is in the range of 0.08-0.25, and y is in the range of 0.1-0.19. The present invention uses a magnetron sputtering apparatus to prepare the halogen-doped ITO conductive film. The halogen-doped ITO conductive film has a visible light transmittance of 85-90% in the wavelength range of 450-790 nm, square resistance range of 20-100 omega/square, and surface work function of 5.5-6.1 eV.
Description
Technical field
The present invention relates to the conductive film field, relate in particular to a kind of halogen doping ITO conducting film and preparation method thereof.
Background technology
The transparent conductive film electrode is the basic component of organic electroluminescence device (OLED), and the quality of its performance directly affects the luminous efficiency of entire device.Wherein, tin indium oxide (ITO) is the most frequently used transparent conductive film material, has higher visible light transmittance rate and low resistivity.But improve the luminous efficiency of device, require the transparent conductive film anode to have higher surface work function.And the work function of ITO generally has only 4.5eV, through also reaching 4.7～5.1eV after the processing such as UV optical radiation or ozone, (be typically 5.7～6.3eV) and also have bigger energy level difference distance with the HOMO energy level of general organic luminous layer, cause the increase of current carrier injection barrier, hindering the raising of luminous efficiency.
Summary of the invention
One of problem to be solved by this invention is to provide a kind of preparation method that can improve the halogen doping ITO conducting film of luminous efficiency.
A kind of preparation method of halogen doping ITO conducting film, its preparation technology is as follows:
S1, take by weighing In
2O
3, SnO
2And SnA
4Powder after evenly mixing, 900～1300 ℃ of following sintering processes, makes ceramic target; Wherein, A is selected from F, Cl or Br; In
2O
3, SnO
2And SnA
4The mole number of powder is respectively 1.6～2.0mol, 0.05～0.3mol and 0.08～0.2mol;
S2 packs the ceramic target that obtains among the step S1 and substrate in the vacuum cavity of magnetron sputtering film device into, and vacuum cavity is arranged to vacuum state;
S3, adjustment magnetron sputtering plating processing parameter is: basic target spacing is 45～95mm, and magnetron sputtering operating pressure 0.2～4Pa, the flow of argon gas working gas are 10～35sccm, and underlayer temperature is 250 ℃～750 ℃; Sputtering power is 30～150W; Then film processed obtains described halogen doping ITO conducting film; The chemical general formula of this halogen doping ITO conducting film is In
2O
3A
x: ySn
4+Wherein, A is doped element, and the span of x is that the span of 0.08～0.25, y is 0.1～0.19.
Among the above-mentioned halogen doping ITO conducting film preparation method:
Among the step S1, preferred, In
2O
3, SnO
2And SnA
4The mole number of powder is respectively 1.8mol, 0.15mol and 0.12mol, and correspondingly, among the step S3, the span of x is that the span of 0.13, y is 0.15; The sintering temperature of described target preparation is 1250 ℃.
Among the step S3, preferred, described basic target spacing is 60mm; Described magnetron sputtering operating pressure is 2.0Pa; The flow of described argon gas working gas is 25sccm; Described underlayer temperature is 500 ℃; Described sputtering power is 100W.
Two of problem to be solved by this invention is to provide a kind of halogen doping ITO conducting film, and this halogen doping ITO conducting film adopts aforesaid method to make, and the chemical general formula of this halogen doping ITO conducting film is In
2O
3A
x: ySn
4+Wherein, A is doped element, and the span of x is that the span of 0.08～0.25, y is 0.1～0.19; Preferably, the span of x is that the span of 0.13, y is 0.15.
Described halogen doping ITO conducting film, its square resistance scope are that 20～100 Ω/ and surface work function are 5.5～6.1eV.
Halogen doping ITO conducting film of the present invention, at 450～790nm wavelength region visible light transmissivity 85%～90%, square resistance scope 20～100 Ω/, surface work function 5.5～6.1eV, use this film as the anode of OLED, its luminous efficiency is significantly improved.
The present invention adopts magnetron sputtering equipment to prepare halogen doping ITO conducting film, and its preparation technology is simple, be easy to control.
Description of drawings
Fig. 1 is preparation technology's schema of halogen doping ITO conducting film among the embodiment;
The transmitted spectrum of the halogen doping ITO conducting film sample that Fig. 2 makes for embodiment 1.
Embodiment
A kind of halogen doping ITO conducting film that provides in the present embodiment, the chemical general formula of this halogen doping ITO conducting film is In
2O
3A
x: ySn
4+Wherein, A is doped element, and A is selected from F, Cl or Br, and the span of x is that the span of 0.08～0.25, y is 0.1～0.19; Preferably, the span of x is that the span of 0.13, y is 0.15; Square resistance scope 20～100 Ω/ and the surface work function of described halogen doping ITO conducting film are 5.5～6.1eV.
The above-mentioned halogen doping ITO conducting film preparation method who provides in the present embodiment, as shown in Figure 1, its preparation technology is as follows:
The preparation of S1, ceramic target: take by weighing In
2O
3, SnO
2And SnA
4Powder, after evenly mixing, sintering under 900～1300 ℃ (preferred 1250 ℃), naturally cooling obtains the ceramic target sample, and it is that 50mm, thickness are the ceramic target of 2mm that the ceramic target sample is cut into diameter; Wherein, A is selected from F, Cl or Br; In
2O
3, SnO
2And SnA
4The mole number of powder is respectively 1.6～2.0mol, 0.05～0.3mol and 0.08～0.2mol;
S2, with the vacuum cavity of the ceramic target among the step S1 and substrate (as, glass) the magnetron sputtering film device of packing into,, and vacuum cavity is arranged to vacuum state; The vacuum tightness of vacuum state is to adopt mechanical pump and molecular pump that cavity is evacuated to 1.0 * 10
-3Pa～1.0 * 10
-5Pa, preferred vacuum tightness is 5.0 * 10
-4Pa;
S3, adjustment magnetron sputtering plating processing parameter are: basic target spacing is 45～95mm, preferred 60mm; Underlayer temperature is 250 ℃～750 ℃, preferred 500 ℃; Gas flow 10～the 35sccm of argon gas working gas, preferred 25sccm; Magnetron sputtering operating pressure 0.2～4Pa, preferred 2.0Pa; Sputtering power is 30～150W, excellent 100W; After the processing parameter adjustment finished, then film processed obtained described halogen doping ITO conducting film; The chemical general formula of this halogen doping ITO conducting film is In
2O
3A
x: ySn
4+Wherein, A is doped element, and the span of x is that the span of 0.08～0.25, y is 0.1～0.19.
Among above-mentioned preparation method's the step S1, preferred, In
2O
3, SnO
2And SnA
4The mole number of powder is respectively 1.8mol, 0.15mol and 0.12mol, and correspondingly, among the step S3, the span of x is that the span of 0.13, y is 0.15.
Halogen doping ITO conducting film, at 450～790nm wavelength region visible light transmissivity 85%～90%, square resistance scope 20～100 Ω/, surface work function 5.5～6.1eV, use this film as the anode of OLED, its luminous efficiency is significantly improved.
Adopt magnetron sputtering equipment to prepare halogen doping ITO conducting film, its preparation technology is simple, be easy to control.
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail.
Substrate among following each embodiment all adopts glass.
Embodiment 1
1, select for use purity to be respectively 99.99% In
2O
3, SnO
2And SnF
4Powder (wherein, In
2O
3Mole number be 1.8mol, SnO
2Mole number be 0.15mol, SnF
4Mole number be 0.12mol), after evenly mixing, at 1250 ℃ of following sintering, naturally cooling obtains the ceramic target sample, it is that 50mm, thickness are the ceramic target of 2mm that the ceramic target sample is cut into diameter;
2, ceramic target is packed in the vacuum cavity of magnetron sputtering film device;
3, carry out oxygen plasma treatment successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, and to it, put into the vacuum cavity of magnetron sputtering film device after finishing; Wherein, the basic target spacing of target and glass is set at 60mm;
4, with mechanical pump and molecular pump the vacuum tightness of the vacuum cavity of magnetron sputtering film device is extracted into 5.0 * 10
-4Pa;
5, adjust the magnetron sputtering plating processing parameter: argon gas working gas flow is 25sccm; The magnetron sputtering operating pressure is 2.0Pa; Underlayer temperature is 500 ℃, and sputtering power is 100W; Then film processed, obtaining structural formula is In
2O
3F
0.13: 0.15Sn
4+Halogen doping ITO conducting film; Piece resistance range 30 Ω/, the surface work function of this halogen doping ITO conducting film are 6.0eV.
The transmitted spectrum of the halogen doping ITO conducting film sample that Fig. 2 makes for embodiment 1; The test of use ultraviolet-visible pectrophotometer, the test wavelength is 300～900nm; As can be known, film has good through performance at visible-range among Fig. 2, is outstanding transparent conductive film material.
Embodiment 2
1, select for use purity to be respectively 99.99% In
2O
3, SnO
2And SnF
4Powder (wherein, In
2O
3Mole number be 1.6mol, SnO
2Mole number be 0.05mol, SnF
4Mole number be 0.2mol), after evenly mixing, at 900 ℃ of following sintering, naturally cooling obtains the ceramic target sample, it is that 50mm, thickness are the ceramic target of 2mm that the ceramic target sample is cut into diameter;
2, ceramic target is packed in the vacuum cavity of magnetron sputtering film device;
3, carry out oxygen plasma treatment successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, and to it, put into the vacuum cavity of magnetron sputtering film device after finishing; Wherein, the basic target spacing of target and glass is set at 45mm;
4, with mechanical pump and molecular pump the vacuum tightness of the vacuum cavity of magnetron sputtering film device is extracted into 1.0 * 10
-3Pa;
5, adjust the magnetron sputtering plating processing parameter: argon gas working gas flow is 10sccm; The magnetron sputtering operating pressure is 0.2Pa; Underlayer temperature is 250 ℃, and sputtering power is 150W; Then film processed, obtaining structural formula is In
2O
3F
0.25: 0.16Sn
4+Halogen doping ITO conducting film; Piece resistance range 90 Ω/, the surface work function of this halogen doping ITO conducting film are 6.1eV.
Embodiment 3
1, select for use purity to be respectively 99.99% In
2O
3, SnO
2And SnF
4Powder (wherein, In
2O
3Mole number be 2mol, SnO
2Mole number be 0.3mol, SnF
4Mole number be 0.08mol), after evenly mixing, at 1300 ℃ of following sintering, naturally cooling obtains the ceramic target sample, it is that 50mm, thickness are the ceramic target of 2mm that the ceramic target sample is cut into diameter;
2, ceramic target is packed in the vacuum cavity of magnetron sputtering film device;
3, carry out oxygen plasma treatment successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, and to it, put into the vacuum cavity of magnetron sputtering film device after finishing; Wherein, the basic target spacing of target and glass is set at 95mm;
4, with mechanical pump and molecular pump the vacuum tightness of the vacuum cavity of magnetron sputtering film device is extracted into 1.0 * 10
-5Pa;
5, adjust the magnetron sputtering plating processing parameter: argon gas working gas flow is 35sccm; The magnetron sputtering operating pressure is 4.0Pa; Underlayer temperature is 750 ℃, and sputtering power is 30W; Then film processed, obtaining structural formula is In
2O
3F
0.08: 0.19Sn
4+Halogen doping ITO conducting film; Piece resistance range 22 Ω/, the surface work function of this halogen doping ITO conducting film are 5.5eV.
Embodiment 4
1, select for use purity to be respectively 99.99% In
2O
3, SnO
2And SnCl
4Powder (wherein, In
2O
3Mole number be 1.8mol, SnO
2Mole number be 0.15mol, SnCl
4Mole number be 0.12mol), after evenly mixing, at 1250 ℃ of following sintering, naturally cooling obtains the ceramic target sample, it is that 50mm, thickness are the ceramic target of 2mm that the ceramic target sample is cut into diameter;
2, ceramic target is packed in the vacuum cavity of magnetron sputtering film device;
3, carry out oxygen plasma treatment successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, and to it, put into the vacuum cavity of magnetron sputtering film device after finishing; Wherein, the basic target spacing of target and glass is set at 60mm;
4, with mechanical pump and molecular pump the vacuum tightness of the vacuum cavity of magnetron sputtering film device is extracted into 5.0 * 10
-4Pa;
5, adjust the magnetron sputtering plating processing parameter: argon gas working gas flow is 25sccm; The magnetron sputtering operating pressure is 2.0Pa; Underlayer temperature is 500 ℃, and sputtering power is 100W; Then film processed, obtaining structural formula is In
2O
3Cl
0.13: 0.15Sn
4+Halogen doping ITO conducting film; Piece resistance range 50 Ω/, the surface work function of this halogen doping ITO conducting film are 5.9eV.
Embodiment 5
1, select for use purity to be respectively 99.99% In
2O
3, SnO
2With Sn Cl
4Powder (wherein, In
2O
3Mole number be 1.6mol, SnO
2Mole number be 0.05mol, Sn Cl
4Mole number be 0.2mol), after evenly mixing, at 900 ℃ of following sintering, naturally cooling obtains the ceramic target sample, it is that 50mm, thickness are the ceramic target of 2mm that the ceramic target sample is cut into diameter;
2, ceramic target is packed in the vacuum cavity of magnetron sputtering film device;
3, carry out oxygen plasma treatment successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, and to it, put into the vacuum cavity of magnetron sputtering film device after finishing; Wherein, the basic target spacing of target and glass is set at 45mm;
4, with mechanical pump and molecular pump the vacuum tightness of the vacuum cavity of magnetron sputtering film device is extracted into 1.0 * 10
-3Pa;
5, adjust the magnetron sputtering plating processing parameter: argon gas working gas flow is 10sccm; The magnetron sputtering operating pressure is 0.2Pa; Underlayer temperature is 250 ℃, and sputtering power is 150W; Then film processed, obtaining structural formula is In
2O
3Cl
0.25: 0.16Sn
4+Halogen doping ITO conducting film; Piece resistance range 30 Ω/, the surface work function of this halogen doping ITO conducting film are 6.0eV.
Embodiment 6
1, select for use purity to be respectively 99.99% In
2O
3, SnO
2With Sn Cl
4Powder (wherein, In
2O
3Mole number be 2mol, SnO
2Mole number be 0.3mol, Sn Cl
4Mole number be 0.08mol), after evenly mixing, at 1300 ℃ of following sintering, naturally cooling obtains the ceramic target sample, it is that 50mm, thickness are the ceramic target of 2mm that the ceramic target sample is cut into diameter;
2, ceramic target is packed in the vacuum cavity of magnetron sputtering film device;
3, carry out oxygen plasma treatment successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, and to it, put into the vacuum cavity of magnetron sputtering film device after finishing; Wherein, the basic target spacing of target and glass is set at 95mm;
4, with mechanical pump and molecular pump the vacuum tightness of the vacuum cavity of magnetron sputtering film device is extracted into 1.0 * 10
-5Pa;
5, adjust the magnetron sputtering plating processing parameter: argon gas working gas flow is 35sccm; The magnetron sputtering operating pressure is 4.0Pa; Underlayer temperature is 750 ℃, and sputtering power is 30W; Then film processed, obtaining structural formula is In
2O
3Cl
0.08: 0.19Sn
4+Halogen doping ITO conducting film; Piece resistance range 25 Ω/, the surface work function of this halogen doping ITO conducting film are 5.7eV.
Embodiment 7
1, select for use purity to be respectively 99.99% In
2O
3, SnO
2And SnBr
4Powder (wherein, In
2O
3Mole number be 1.8mol, SnO
2Mole number be 0.15mol, SnBr
4Mole number be 0.12mol), after evenly mixing, at 1250 ℃ of following sintering, naturally cooling obtains the ceramic target sample, it is that 50mm, thickness are the ceramic target of 2mm that the ceramic target sample is cut into diameter;
2, ceramic target is packed in the vacuum cavity of magnetron sputtering film device;
3, carry out oxygen plasma treatment successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, and to it, put into the vacuum cavity of magnetron sputtering film device after finishing; Wherein, the basic target spacing of target and glass is set at 60mm;
4, with mechanical pump and molecular pump the vacuum tightness of the vacuum cavity of magnetron sputtering film device is extracted into 5.0 * 10
-4Pa;
5, adjust the magnetron sputtering plating processing parameter: argon gas working gas flow is 25sccm; The magnetron sputtering operating pressure is 2.0Pa; Underlayer temperature is 500 ℃, and sputtering power is 100W; Then film processed, obtaining structural formula is In
2O
3Br
0.13: 0.15Sn
4+Halogen doping ITO conducting film; Piece resistance range 40 Ω/, the surface work function of this halogen doping ITO conducting film are 5.6eV.
Embodiment 8
1, select for use purity to be respectively 99.99% In
2O
3, SnO
2And SnBr
4Powder (wherein, In
2O
3Mole number be 1.6mol, SnO
2Mole number be 0.05mol, SnBr
4Mole number be 0.2mol), after evenly mixing, at 900 ℃ of following sintering, naturally cooling obtains the ceramic target sample, it is that 50mm, thickness are the ceramic target of 2mm that the ceramic target sample is cut into diameter;
2, ceramic target is packed in the vacuum cavity of magnetron sputtering film device;
3, carry out oxygen plasma treatment successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, and to it, put into the vacuum cavity of magnetron sputtering film device after finishing; Wherein, the basic target spacing of target and glass is set at 45mm;
4, with mechanical pump and molecular pump the vacuum tightness of the vacuum cavity of magnetron sputtering film device is extracted into 1.0 * 10
-3Pa;
5, adjust the magnetron sputtering plating processing parameter: argon gas working gas flow is 10sccm; The magnetron sputtering operating pressure is 0.2Pa; Underlayer temperature is 250 ℃, and sputtering power is 150W; Then film processed, obtaining structural formula is In
2O
3Br
0.25: 0.16Sn
4+Halogen doping ITO conducting film; Piece resistance range 100 Ω/, the surface work function of this halogen doping ITO conducting film are 6.0eV.
Embodiment 9
1, select for use purity to be respectively 99.99% In
2O
3, SnO
2And SnBr
4Powder (wherein, In
2O
3Mole number be 2mol, SnO
2Mole number be 0.3mol, the mole number of SnBr4 is 0.08mol), after evenly mixing, at 1300 ℃ of following sintering, naturally cooling obtains the ceramic target sample, it is that 50mm, thickness are the ceramic target of 2mm that the ceramic target sample is cut into diameter;
2, ceramic target is packed in the vacuum cavity of magnetron sputtering film device;
3, carry out oxygen plasma treatment successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, and to it, put into the vacuum cavity of magnetron sputtering film device after finishing; Wherein, the basic target spacing of target and glass is set at 95mm;
4, with mechanical pump and molecular pump the vacuum tightness of the vacuum cavity of magnetron sputtering film device is extracted into 1.0 * 10
-5Pa;
5, adjust the magnetron sputtering plating processing parameter: argon gas working gas flow is 35sccm; The magnetron sputtering operating pressure is 4.0Pa; Underlayer temperature is 750 ℃, and sputtering power is 30W; Then film processed, obtaining structural formula is In
2O
3Br
0.08: 0.19Sn
4+Halogen doping ITO conducting film; Piece resistance range 70 Ω/, the surface work function of this halogen doping ITO conducting film are 5.5eV.
Should be understood that above-mentioned statement at preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, scope of patent protection of the present invention should be as the criterion with claims.
Claims (9)
1. the preparation method of a halogen doping ITO conducting film is characterized in that, this preparation method's step is as follows:
S1, take by weighing In
2O
3, SnO
2And SnA
4Powder after evenly mixing, 900～1300 ℃ of following sintering processes, makes ceramic target; Wherein, A is selected from F, Cl or Br, In
2O
3, SnO
2And SnA
4The mole number of powder is respectively 1.6～2.0mol, 0.05～0.3mol and 0.08～0.2mol;
S2 packs the ceramic target that makes among the step S1 and substrate in the vacuum cavity of magnetron sputtering film device into, and vacuum cavity is arranged to vacuum state;
S3, adjustment magnetron sputtering plating processing parameter is: basic target spacing is 45～95mm, and magnetron sputtering operating pressure 0.2～4Pa, the flow of argon gas working gas are 10～35sccm, and underlayer temperature is 250 ℃～750 ℃, and sputtering power is 30～150W; Then film processed obtains described halogen doping ITO conducting film; The chemical general formula of this halogen doping ITO conducting film is In
2O
3A
x: ySn
4+Wherein, A is doped element, and the span of x is that the span of 0.08～0.25, y is 0.1～0.19.
2. the preparation method of halogen doping ITO conducting film according to claim 1 is characterized in that, among the described step S1, and In
2O
3, SnO
2And SnA
4The mole number of powder is respectively 1.8mol, 0.15mol and 0.12mol, and correspondingly, among the step S3, the span of x is that the span of 0.13, y is 0.15.
3. the preparation method of halogen doping ITO conducting film according to claim 1 is characterized in that, among the described step S1, the sintering temperature of described target preparation is 1250 ℃.
4. the preparation method of halogen doping ITO conducting film according to claim 1 is characterized in that, among the described step S2, the vacuum tightness of described vacuum state is 1.0 * 10
-3Pa～1.0 * 10
-5Pa.
5. the preparation method of halogen doping ITO conducting film according to claim 4 is characterized in that, the vacuum tightness of described vacuum state is 5.0 * 10
-4Pa.
6. the preparation method of halogen doping ITO conducting film according to claim 1 is characterized in that, among the described step S3, described basic target spacing is 60mm; Described magnetron sputtering operating pressure is 2.0Pa; The flow of described argon gas working gas is 25sccm; Described underlayer temperature is 500 ℃; Described sputtering power is 100W.
7. a halogen doping ITO conducting film that adopts the described preparation method of claim 1 to make is characterized in that, the chemical general formula of this halogen doping ITO conducting film is In
2O
3A
x: ySn
4+Wherein, A is doped element, and the span of x is that the span of 0.08～0.25, y is 0.1～0.19.
8. halogen doping ITO conducting film according to claim 7 is characterized in that, the span of x is that the span of 0.13, y is 0.15.
9. halogen doping ITO conducting film according to claim 7 is characterized in that, the square resistance scope of described halogen doping ITO conducting film is that 20～100 Ω/ and surface work function are 5.5～6.1eV.
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| CN2012100302286A CN103243298A (en) | 2012-02-10 | 2012-02-10 | Halogen-doped ITO conductive film and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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ID=48923172
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01283369A (en) * | 1988-05-11 | 1989-11-14 | Nippon Mining Co Ltd | Sputtering target for forming electrically conductive transparent ito film |
| JPH03199373A (en) * | 1989-12-28 | 1991-08-30 | Nippon Mining Co Ltd | Sputtering target for forming electrically conductive transparent ito film |
| CN1119851A (en) * | 1993-12-28 | 1996-04-03 | 昭和电工株式会社 | ITO sintered body, ITO transparent conductive film and method of forming the film |
-
2012
- 2012-02-10 CN CN2012100302286A patent/CN103243298A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01283369A (en) * | 1988-05-11 | 1989-11-14 | Nippon Mining Co Ltd | Sputtering target for forming electrically conductive transparent ito film |
| JPH03199373A (en) * | 1989-12-28 | 1991-08-30 | Nippon Mining Co Ltd | Sputtering target for forming electrically conductive transparent ito film |
| CN1119851A (en) * | 1993-12-28 | 1996-04-03 | 昭和电工株式会社 | ITO sintered body, ITO transparent conductive film and method of forming the film |
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Application publication date: 20130814 |