CN103242038A - Ceramic capacitor medium and preparation method thereof - Google Patents
Ceramic capacitor medium and preparation method thereof Download PDFInfo
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- CN103242038A CN103242038A CN201310210480XA CN201310210480A CN103242038A CN 103242038 A CN103242038 A CN 103242038A CN 201310210480X A CN201310210480X A CN 201310210480XA CN 201310210480 A CN201310210480 A CN 201310210480A CN 103242038 A CN103242038 A CN 103242038A
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- ceramic capacitor
- batio
- capacitor dielectric
- synthetic materials
- displacement
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Abstract
The invention discloses a ceramic capacitor medium. The ceramic capacitor medium comprises BaTiO3, and is characterized by also comprising a BaTiO3 and BaSnO3 synthetic material, a Bi2O3 and TiO2 synthetic material, a displacement modified material and a doped modified material. A method for preparing the ceramic capacitor medium is characterized by comprising the following steps of: grinding and uniformly mixing BaTiO3 ceramic, the displacement modified material and the doped modified material; and then putting the mixture into an alumina crucible, and preserving heat for 2.3 to 2.7 hours at the temperature of 1,300 to 1,350 DEG C. The ceramic capacitor medium has the beneficial effects that the dielectric-temperature characteristic of a new material accords with technical indexes of a microwave oven double-hole capacitor; the dielectric loss of the material is reduced; and the voltage resistance, particularly the alternating voltage resistance, of the medium is improved.
Description
Technical field
The present invention relates to a kind of field of non-metallic materials, particularly a kind of pressure ceramic capacitor dielectric.
Background technology
Along with the human society development of science and technology, the application development speed of electronics is very rapid, the quantity of every 4-5 electronics namely is doubled, and simultaneously, " electromagnetic pollution " of electronics also becomes social the fourth-largest pollution, and various countries take law and technical measures one after another, attempt changes this situation rapidly, it is contemplated that the demand of the filter element of this class anti-electromagnetic-radiation will increase substantially, and require also more and more higher as the technical quality of ceramic condenser in the filter element.
At present, the special-purpose diplopore normality of microwave oven filtering circuit electric capacity relies on Japanese import for a long time, and Japan blocks some gordian techniquies, and domestic many producers are explored, but rarely have achievement.Japan is to be the ferroelectric ceramic(s) of principal crystalline phase with the barium titanate.The barium phthalate base ferroelectric ceramic(s) is under the DC electric field effect, each crystal grain of pottery produces thisly extends and in the contraction of (laterally) of vertical electric field direction longitudinally along direction of an electric field, just caused the inner stress that produces of ceramic product, this is ferroelectric ceramic(s) electrostriction or electric to strain under effect of electric field.
The barium phthalate base ferroelectric ceramic(s) applies a sufficiently high alternating electric field, the periodical change of electric field induced strain must be accompanied by periodical change and the effect of (comprising crystal boundary and the intragranular) stress in the pottery, alternating-electric field electric capacity withstand voltage properties is poor, particularly to AC voltage difference.
Dielectric-the temperature profile of barium titanate ceramics specific inductivity as can be seen is very high; But its dielectric loss is also very high, can reach 0.01-0.02, and this is a very big weakness of barium titanate ceramics.
For this reason, need a kind of condenser dielectric of invention, in the very high specific inductivity of maintenance, reduce dielectric loss.
Summary of the invention
Goal of the invention of the present invention is: at the problem of above-mentioned existence, provide a kind of to BaTiO
3Pottery has carried out displacement modification and doping vario-property, and material dissolves is arrived BaTiO
3In the pottery, replace formation BaTiO with corresponding ion
3Ceramic base sosoloid.
The technical solution used in the present invention is such:
A kind of ceramic capacitor dielectric comprises BaTiO
3, it is characterized in that: also comprise BaTiO
3With BaSnO
3Synthetic materials, Bi
2O
3With TiO
2Synthetic materials, and added the material modified and doping vario-property material of displacement.
Ceramic capacitor dielectric as claimed in claim 1 is characterized in that: described displacement is material modified to be comprised: CaSnO
3, CaTiO
3, SrTiO
3
Further, described each constituent mass degree is followed successively by BaTiO
347-57%, BaTiO
3With BaSnO
3Synthetic materials 13-24%, Bi
2O
3With TiO
2Synthetic materials 15-24%, CaSnO
31-9%, CaTiO
31-9%, SrTiO
31-5%.In the A position, the B position changes in the process and will change BaTiO with multiple structure formation
3The principal crystalline phase of pottery.
Further, for better Zhan Ju peak, pressure occupy the peak, described doping vario-property material comprises Bi
2O
3, MnCO
3, EnO adds rare earth element ce O simultaneously
2And La
2O
3
Further, described its mass percentage content of doping vario-property material is followed successively by Bi
2O
30.1-0.5, MnCO
30.1-0.7%, EnO 0.1-0.5%, CeO
20.1-0.9%, La
2O
30.1-0.7%.
Further, described BaTiO
3With BaSnO
3Synthetic materials, its both quality proportion relation is between the 1:9-2:3.
Further, described Bi
2O
3With TiO
2Synthetic materials, its both quality proportion relation is: between the 1:1-1:3.
A kind of method for preparing above-mentioned ceramic capacitor dielectric is characterized in that: with BaTiO
3Pottery, the material modified and doping vario-property material ground and mixed of displacement were put into alumina crucible 1000-1350 degree centigrade of insulation 2.3-2.7 individual hour after evenly.
In sum, owing to adopted technique scheme, the invention has the beneficial effects as follows:
1, the dielectric-temperature profile of novel material reaches the technical indicator of microwave oven diplopore electric capacity, and has reduced the dielectric loss of material; Improved the withstand voltage properties of medium, particularly ac resistance is pressed performance.
Embodiment
Below in conjunction with subordinate list, the present invention is done detailed explanation.
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with subordinate list and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the present invention, and be not used in restriction the present invention.
Table 1 is the prescription of 2 samples of the present invention, with the BaTiO3 pottery, displacement is material modified and doping vario-property material ground and mixed is put into 1330 degrees centigrade of insulations of alumina crucible 2.5 hours after evenly.
Table 1
In the table:
Mixing 1 is BaTiO
3With BaSnO
3Synthetic materials;
Mixing 2 is Bi
2O
3With TiO
2Synthetic materials.
Table 2 is the dielectric properties of each prescription sample
Table 2
In the table, temperature one hurdle unit be degree centigrade (℃), numerical value in the table, unit are pico farad (pf).
Be the dielectric-temperature profile of South Korean venture microwave oven diplopore electric capacity on the market to 1.
Be the dielectric-temperature profile of Japanese enterprises microwave oven diplopore electric capacity on the market to 2.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a ceramic capacitor dielectric comprises BaTiO
3, it is characterized in that: also comprise BaTiO
3With BaSnO
3Synthetic materials, Bi
2O
3With TiO
2Synthetic materials, and added the material modified and doping vario-property material of displacement.
2. ceramic capacitor dielectric as claimed in claim 1, it is characterized in that: described displacement is material modified to be comprised: CaSnO
3, CaTiO
3, SrTiO
3
3. ceramic capacitor dielectric as claimed in claim 2, it is characterized in that: described each constituent mass degree is followed successively by BaTiO
347-57%, BaTiO
3With BaSnO
3Synthetic materials 13-24%, Bi
2O
3With TiO
2Synthetic materials 15-24%, CaSnO
31-9%, CaTiO
31-9%, SrTiO
31-5%.
4. ceramic capacitor dielectric as claimed in claim 1, it is characterized in that: described doping vario-property material comprises Bi
2O
3, MnCO
3, EnO adds rare earth element ce O simultaneously
2And La
2O
3
5. ceramic capacitor dielectric as claimed in claim 4, it is characterized in that: described its mass percentage content of doping vario-property material is followed successively by Bi
2O
30.1-0.5, MnCO
30.1-0.7%, EnO 0.1-0.5%, CeO
20.1-0.9%, La
2O
30.1-0.7%.
6. as the described ceramic capacitor dielectric of one of claim 1-5, it is characterized in that: described BaTiO
3With BaSnO
3Synthetic materials, its both quality proportion relation is between the 1:9-2:3.
7. as the described ceramic capacitor dielectric of one of claim 1-5, it is characterized in that: described Bi
2O
3With TiO
2Synthetic materials, its both quality proportion relation is: between the 1:1-1:3.
8. a method for preparing one of claim 1-6 described ceramic capacitor dielectric is characterized in that: with BaTiO
3Pottery, the material modified and doping vario-property material ground and mixed of displacement were put into alumina crucible 1000-1350 degree centigrade of insulation 2.3-2.7 individual hour after evenly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310210480XA CN103242038A (en) | 2013-05-31 | 2013-05-31 | Ceramic capacitor medium and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310210480XA CN103242038A (en) | 2013-05-31 | 2013-05-31 | Ceramic capacitor medium and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103242038A true CN103242038A (en) | 2013-08-14 |
Family
ID=48921947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310210480XA Pending CN103242038A (en) | 2013-05-31 | 2013-05-31 | Ceramic capacitor medium and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103242038A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104876565A (en) * | 2015-05-13 | 2015-09-02 | 武汉理工大学 | Lead-free high-dielectric-constant energy-storage dielectric ceramic material and preparation method thereof |
| CN107226697A (en) * | 2017-06-01 | 2017-10-03 | 合肥尚强电气科技有限公司 | A kind of environment-protecting high-pressure ceramic capacitor dielectric material and preparation method thereof |
| CN112979314A (en) * | 2021-04-19 | 2021-06-18 | 清华大学 | Medium-dielectric-constant high-Q microwave dielectric ceramic material and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2141752A1 (en) * | 2008-06-30 | 2010-01-06 | Hitachi Metals, Ltd. | Ceramic sintered compact and piezoelectric element field |
| CN101759433A (en) * | 2009-12-28 | 2010-06-30 | 费金华 | Doped modified barium titanate-based high-pressure porcelain capacitor material |
| CN102101775A (en) * | 2010-12-08 | 2011-06-22 | 汕头高新区松田实业有限公司 | Low-loss high-voltage ceramic capacitor dielectric |
-
2013
- 2013-05-31 CN CN201310210480XA patent/CN103242038A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2141752A1 (en) * | 2008-06-30 | 2010-01-06 | Hitachi Metals, Ltd. | Ceramic sintered compact and piezoelectric element field |
| CN101759433A (en) * | 2009-12-28 | 2010-06-30 | 费金华 | Doped modified barium titanate-based high-pressure porcelain capacitor material |
| CN102101775A (en) * | 2010-12-08 | 2011-06-22 | 汕头高新区松田实业有限公司 | Low-loss high-voltage ceramic capacitor dielectric |
Non-Patent Citations (1)
| Title |
|---|
| 赵新等: "BaSnO3掺杂对BaTiO3-Nb2O3-Co3O4系统介电性能的影响", 《陕西科技大学学报》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104876565A (en) * | 2015-05-13 | 2015-09-02 | 武汉理工大学 | Lead-free high-dielectric-constant energy-storage dielectric ceramic material and preparation method thereof |
| CN107226697A (en) * | 2017-06-01 | 2017-10-03 | 合肥尚强电气科技有限公司 | A kind of environment-protecting high-pressure ceramic capacitor dielectric material and preparation method thereof |
| CN112979314A (en) * | 2021-04-19 | 2021-06-18 | 清华大学 | Medium-dielectric-constant high-Q microwave dielectric ceramic material and preparation method thereof |
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Application publication date: 20130814 |