CN103223209B - Novel method for achieving uniform strong static magnetic field in free space - Google Patents
Novel method for achieving uniform strong static magnetic field in free space Download PDFInfo
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- CN103223209B CN103223209B CN201310063549.0A CN201310063549A CN103223209B CN 103223209 B CN103223209 B CN 103223209B CN 201310063549 A CN201310063549 A CN 201310063549A CN 103223209 B CN103223209 B CN 103223209B
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Abstract
The invention relates to a novel method for achieving a uniform strong static magnetic field in free space. The conventional method is difficult to achieve a very strong static magnetic field in free space. The novel method takes a ring-shaped component in two-dimensional space as a static magnetic field intensifier, aeolotropic non-uniform magnetic material with negative permeability is filled in the ring-shaped component, and the inner and outer areas outside the ring-shaped component are full of air; a low-intensity static magnetic field with homogeneous background is applied in the whole environment, in which the ring-shaped component is positioned; and therefore, the uniform strong static magnetic field can be achieved in the inner area outside the ring-shaped component. The novel method can achieve 50T or higher intensity magnetic fields that cannot be achieved by adopting the prior art in large free space.
Description
Technical field
The invention belongs to Electromagnetic Fields & Magnetic Waves application, relate to a kind of passive magnetostatic field booster that can realize very strong homogeneous static magnetic field in very large freeboard region.
Background technology
In free space, realize high-intensity magnetic field in scientific research, medical treatment, there is very important effect in the fields such as military affairs.Medically, magnetostatic field, at symptom checking, all serves very important effect in treatment and medical research.Such as: transcranial magnetic stimulation is that human brain is passed in magnetic field by one, may be used for studying brain science, the method for the treatment of and brain diseases related.But being limited to magnetic field intensity cannot do very high, making can only by magnetic field penetration to human brain superficial cortical layers region.And for the darker region of human brain, ganglion basal, nerve centre etc. cannot be entered [1] by magnetic field.The technology realizing strong static magnetic field will play huge impetus to the method.In the nuclear magnetic resonance imaging system medically used at present, in order to improve the spatial resolution of imaging, can realize by means of the method improving magnetostatic field.The magnetostatic field that the nuclear magnetic resonance equipment of current commercialization uses, from 1.5T, 3T, the highlyest can reach 7T[2].The technology realizing strong static magnetic field will improve the spatial resolution of NMR system to a great extent, contributes to earlier finding lesion locations and locating lesion locations more accurately.Under the high-intensity magnetic field of 10 more than T, magnetic field affects highly significant to chemical reaction system, even can have influence on the reaction heat of chemical reaction, all many-sides such as direction, reaction rate, activation energy, entropy that pH value, chemical reaction carry out.The realization of high-intensity magnetic field plays very large impetus by biochemical research areas.
At present, people can pass into heavy current on the wire of hollow solenoid, and then realize high-intensity magnetic field in the free internal space of solenoid.Namely high-intensity magnetic field is realized by large electric current.But this method is limited in wire the maximum current (electric current is excessive, produces too much heat, thus burns out wire) allowing to pass through.Under the technology using cooling coil, also cannot realize the magnetostatic field being greater than 50T in free space.The strongest artificial magnetostatic field realized in the world is at present 45T, is [3,4] that realize by applying very strong electric energy to superconductor or diamagnetic body.This method also (the airport region of the diameter of 32mm) can only realize the magnetostatic field of 45T in very little space.This method needs to consume a lot of electric energy simultaneously.Also there is scholar to propose in the recent period, very strong magnetostatic field [5] can be realized by means of superconductor material and the staggered method of ferromagnetic material in free space.But this method also has significant limitation, very strong magnetic field to be realized in given area of space based on this technology, device size must be done to obtain very large (will realize the magnetic field of more than 50T, the interior outer radius physical dimension ratio of this device is greater than 50).
【1】 M. Kobayashi and A. Pascual-Leone, ‘Transcranial magnetic stimulation in neurology,’ Lancet Neurology 2, 145 (2003).
【2】 M. A Brown and R. C. Semelka, MRI: basic principles and applications. (2010, Wiley-Blackwell).
【3】 F. Gomory, M. Solovyov, J. Souc, C. Navau, J. Prat-Camps, and A. Sanchez, Science 335, 1466 (2012).
【4】 H. J. Schneider-Muntau, B. L. Brandt, L. C. Brunel, T. A. Cross, A. S. Edison, A. G. Marshall, and A. P. Reyes, ‘The National High Magnetic Field Laboratory,’ Physica B 346–347, 643 (2004).
【5】 C. Navau, J. Prat-Camps, and A. Sanchez, PRL 109, 263903 (2012).
Summary of the invention
The present invention is directed to the deficiencies in the prior art, devise a kind of passive magnetostatic field booster that can realize 50T or higher homogeneous static magnetic field in very large free space.
Theoretical basis of the present invention is that the transform optics being just suggested in recent years and furtheing investigate is theoretical, needs to realize by means of developing the special medium of novel artificial very rapidly in recent years.
The technical solution used in the present invention is: a ring-shaped device in two-dimensional space, as magnetostatic field booster, is wherein filled with the anisotropic non-homogeneous magnetic material of negative magnetoconductivity.Inside and outside region outside ring-shaped device is all air.The magnetic material wherein forming this device is anisotropic, and the pcrmeability namely in radial direction and tangential direction is different.And the magnetic material forming this device is (namely material parameter will change with locus conversion) heterogeneous.By adding a weak homogeneous background magnetostatic field in the whole environment residing for ring-shaped device, in the interior zone now outside ring-shaped device, realize uniform strong static magnetic field.
The beneficial effect that the present invention has is: compared with prior art, and what before the present invention can realize, technology cannot be accomplished realizes 50T or higher magnetostatic field in very large free space.Magnetic field of the present invention enhance device is a passive device, does not need to consume the enhancing that a large amount of electric energy just can realize magnetic field.Without the need to refrigeration, without the need to considering that heavy current burns out the restriction of wire.Meanwhile, the physical dimension of this device can closely (inside and outside radius ratio is without the need to doing just can realize very strong magnetic field very greatly).Utilize this device can realize uniform magnetic field in very large region.
Accompanying drawing explanation
Fig. 1 is the structure chart of device;
Fig. 2 is device performance figure;
Fig. 3 is device pcrmeability tangential component figure;
Fig. 4 is device pcrmeability radial component figure.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is further described:
As shown in Figure 1, this device is a two-dimensional device (during work, magnetic field is in this plane), is a loop configuration (corresponding 1-1).?
r 1<
r<
r 2region 1-1 be filled with anisotropic non-homogeneous magnetic material, the parameter distribution of material is:
μ r=(
r-
r 2(
r 1-
r 3)/(
r 2-
r 3))/
r,
μ θ=1/
μ r.
μ r represent pcrmeability radial component,
μ θ represent pcrmeability tangential component.The distribution of material and the physical dimension of device
r 1,
r 2relevant.Also with parameter
r 3relevant (
r 3representing an imaginary radius, is the parameter introduced in Design Theory, does not have actual geometric radius and its correspondence), parameter
r 3determine the magnetic field intensification factor that this device can realize.
r>
r 2region 1-3 be air.
r<
r 1region 1-2 be also air, very strong magnetic field can be realized in this region.During devices function, need to add a very weak homogeneous background magnetostatic field in the whole environment residing for device.Now can be
r<
r 1region in realize background magnetic field (
r 3/
r 1) uniform strong static magnetic field doubly.The physical dimension of device (
r 1with
r 2) can need choose according to practical application, the intensification factor in magnetic field (
r 3/
r 1) also can adjust as required.When
r 1, r 2, r 3time different, the parameter distribution of device is also different.
Provide a concrete design below, such as device is of a size of
r 1=0.2m,
r 2=0.3m.And now get
r 3=20m, the magnetic field that can realize 100 times strengthens.Fig. 2 gives magnetic field flux density
band the relation (notice that device itself is a round symmetrical structure, therefore Fig. 2 has only drawn a transversal) between locus.This device is arranged in a waveguide environmental (forming a two-dimensional space), in the spatial context residing for whole device, add the uniform low-intensity magnetic field (magnetic direction is positioned at this device institute planar) of a 1T, the Distribution of Magnetic Field beyond device and in device as shown in Figure 2.Can find out, in the air section that device encases, (1-2 part) achieves the homogeneous static magnetic field of 100T.
When device geometries is chosen consistent with Fig. 2 with magnetic field intensification factor (
r 1=0.2m,
r 2=0.3m,
r 3=20m), Fig. 3 and Fig. 4 gives the parameter distribution figure of this device.Notice that this device is anisotropic material, Fig. 3 represents pcrmeability tangential component
μ θ value with the variation relation of locus, and Fig. 4 illustrates pcrmeability radial component
μ r value with the variation relation of locus.
The advantage of magnetic field of the present invention booster comprises:
(1) can realize very strong magnetostatic field (50T or stronger magnetostatic field all can realize) in free space, this is that current technology cannot be accomplished.Current technology can only realize the magnetostatic field of 45T in free space.
(2) device of the present invention is passive device, does not need to consume a large amount of electric energy.
(3) this device can realize uniform strong static magnetic field in very large region.R< in Fig. 1
r 1region (1-2) be the region that can realize strong static magnetic field, and parameter
r 1can according to actual needs people for choosing.
(4) strong static magnetic field realized in this device is uniform magnetic field.
(5) structure of this device can closely, the namely interior outer radius of device
r 1,
r 2need not differ greatly.Artificial design can be needed according to application.
Present invention sets forth a kind of novel magnetic field booster, very strong homogeneous static magnetic field can be realized in very large freeboard region.Utilize the present invention can realize being greater than the magnetostatic field of 50T, this is that current technology cannot realize.Meanwhile, the device that the present invention obtains is a passive device, does not need to consume a large amount of electric energy to maintain its work, only needs to be placed in a weak ambient magnetic field environment just to obtain a very strong magnetic field.
Claims (1)
1. realize a method for uniform strong static magnetic field in free space, it is characterized in that:
Using the ring-shaped device of in two-dimensional space as magnetostatic field booster, fill the anisotropic non-homogeneous magnetic material of negative magnetoconductivity in ring-shaped device, the inside and outside region outside ring-shaped device is all air; By adding a weak homogeneous background magnetostatic field in the whole environment residing for ring-shaped device, in the interior zone now outside ring-shaped device, realize uniform strong static magnetic field;
If the internal ring radius of ring-shaped device is
r 1, outer shroud radius is
r 2, then the distributed constant of the described non-homogeneous magnetic material in ring-shaped device is:
μ r=(
r-
r 2(
r 1-
r 3)/(
r 2-
r 3))/
r,
μ θ=1/
μ r;
rfor any point in ring-shaped device is to the distance in the center of circle,
μ r represent pcrmeability radial component,
μ θ represent pcrmeability tangential component; The distribution of material and the physical dimension of device
r 1,
r 2relevant, go back and parameter
r 3relevant, wherein
r 3representing an imaginary radius, is the parameter introduced in Design Theory, parameter
r 3determine this device magnetic field intensification factor.
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1926443A (en) * | 2004-03-03 | 2007-03-07 | 皇家飞利浦电子股份有限公司 | Magnetic resonance imaging scanner with booster iron |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100305402A1 (en) * | 2009-05-29 | 2010-12-02 | Magnetecs,Inc. | Method and apparatus for magnetic waveguide forming a shaped field employing a magnetic aperture for guiding and controlling a medical device |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1926443A (en) * | 2004-03-03 | 2007-03-07 | 皇家飞利浦电子股份有限公司 | Magnetic resonance imaging scanner with booster iron |
Non-Patent Citations (2)
| Title |
|---|
| 《Magnetic energy harvesting and concentration at distance by transformation optics》;Carles Navau等;《PHYSICAL REVIEW LETTERS》;20121228;摘要、正文第2-4页、图1a * |
| 《Transformation Optics and Metamaterials》;Huangyang Chen等;《NATURE MATERIALS》;20100423;第9卷;正文第391,393页、图5b-5c * |
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