CN103215650A - Rapid thermal annealing apparatus - Google Patents
Rapid thermal annealing apparatus Download PDFInfo
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- CN103215650A CN103215650A CN 201210018609 CN201210018609A CN103215650A CN 103215650 A CN103215650 A CN 103215650A CN 201210018609 CN201210018609 CN 201210018609 CN 201210018609 A CN201210018609 A CN 201210018609A CN 103215650 A CN103215650 A CN 103215650A
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- thermal anneal
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Abstract
The invention provides a rapid thermal annealing apparatus. The apparatus comprises a substrate bearing unit used for placing a substrate, a crucible used for containing a solid substance for making an atmosphere, and a heating device placed between the substrate and the crucible and used for evaporating the solid substance in the crucible and upward heating the substrate in a substrate rack.
Description
Technical field
The application relates to technical field of manufacturing semiconductors, and specifically, relates to a kind of rapid thermal anneal er.
Background technology
(Rapid Thermal Annealing RTA) is a kind of thermal treatment process of short time high temperature to rapid thermal annealing.In the last few years, rapid thermal annealing was introduced in film and other material hot treatment, and its characteristics are heat-up rate than very fast, can several seconds to tens seconds arrive needed temperature (heat-up rate can reach 45 ℃/s).Adopt rapid thermal annealing can have a lot of advantages to film, for example can realize that surface heat is handled fast film; Can break through the resistance to extreme temperature of substrate, film be annealed being higher than under the resistance to extreme temperature of substrate; More energy-conservation etc. in scale operation.
Granted publication CN 2298265Y discloses a kind of short annealing device, and it has gas, temperature and a pressure-tight reaction chamber to external world.This reaction chamber comprises a cooling zone, a buffer zone and a heating zone.Utilize suitable transport unit and control device, will desire the annealed sample and transmit in that differential responses are interval, and control the kind and the turnover of its internal gas, and the temperature of reaction chamber, pressure, so that various different annealed environment to be provided, reach the purpose of short annealing.
But a lot of film rapid thermal annealings need carry out under some special atmospheric conditions now.For example, the cadmium telluride battery need be at CdCl
2Carry out under the atmosphere of steam, the CIGS hull cell need vulcanize or selenizing, and the CZTS hull cell need vulcanize etc.These special atmosphere realize that by the vaporizing solid material gasification realizes.Thereby, when realizing rapid thermal annealing, need improve, in annealing device, to realize required atmosphere annealing device.
Summary of the invention
One of purpose of the application is to provide a kind of improved rapid thermal anneal er.Described rapid thermal anneal er comprises: the substrate supporting unit is used to put substrate; Crucible is placed the solid matter that is used to make atmosphere therein; And heating unit, place between described substrate and the described crucible, be used for making the solid matter evaporation of described crucible and upwards heat substrate in the described substrate holder.
In above-mentioned rapid thermal anneal er, described substrate supporting unit is a substrate holder, and described substrate is supported by substrate holder.
In above-mentioned rapid thermal anneal er, described substrate supporting unit is a power wheel, and described substrate is supported by power wheel, and is moved by described power wheel drive substrate.
In above-mentioned rapid thermal anneal er, halogen lamp or the array of halogen lamps of described heating unit for the rapid heating source can be provided.
In above-mentioned rapid thermal anneal er, described array of halogen lamps is by being arranged in parallel.
In above-mentioned rapid thermal anneal er, in described array of halogen lamps, the spacing between the halogen lamp is 1 to 5 centimetre, and planeness is ± 5 millimeters.
In above-mentioned rapid thermal anneal er, described array of halogen lamps is arranged by inserting finger-like.
In above-mentioned rapid thermal anneal er, in described array of halogen lamps, halogen lamp 1/2 the halogen lamp length that staggers mutually, row are 1 to 5 centimetre with distance between being listed as, planeness is ± 5 millimeters.
In above-mentioned rapid thermal anneal er, described crucible is plumbago crucible, quartz crucible or other resistant to elevated temperatures ceramic crucible.
In above-mentioned rapid thermal anneal er, the width of described crucible is greater than the width of film.
In above-mentioned rapid thermal anneal er, described substrate holder has the groove that is used to place substrate, wherein will carry out the annealed substrate surface and place downwards.
In above-mentioned rapid thermal anneal er, also comprise: vacuum system is used to realize the vacuum of rapid thermal anneal er.
In above-mentioned rapid thermal anneal er, described vacuum system is mechanical pump, lobe pump, molecular pump, diffusion pump or its arbitrary combination.
In above-mentioned rapid thermal anneal er, also comprise: airing system is used to provide shielding gas, so that be implemented in the shielding gas annealing under the specific gas condition.
In above-mentioned rapid thermal anneal er, also comprise: the first secured adjusted device, the described first secured adjusted device is used for fixing the substrate supporting unit, and regulates the distance between substrate and the heating unit; With the second secured adjusted device, the described second secured adjusted device is used for fixing heating unit, and regulates the distance between described heating unit and described crucible, described heating unit and the described substrate supporting unit.
In above-mentioned rapid thermal anneal er, also comprise: be respectively applied for first, second and the 3rd temperature-detecting device of measuring temperature in substrate, heating unit and the crucible.
In above-mentioned rapid thermal anneal er, described first, second and the 3rd temperature-detecting device are K type thermopair.
Compared with prior art, the application has following advantage at least: the first, and the application's rapid thermal anneal er can provide being rapidly heated of 45 ℃/s; The second, the application's rapid thermal anneal er can be implemented in carries out thermal annealing under the particular atmosphere, satisfy the needs of Production Example such as thin-film solar cells etc.; The 3rd, for the homogeneity that guarantees to heat, having proposed to be arranged in parallel in the example of the application's rapid thermal anneal er and having inserted refers to the array of halogen lamps of arranging; The 4th, except can using solid atmosphere, the application's rapid thermal anneal er also can external vacuum system and airing system, thereby realizes the short annealing under vacuum and the shielding gas environment.
Description of drawings
Fig. 1 is the structural representation according to the rapid thermal anneal er of the application's a embodiment;
Fig. 2 is the partial enlarged drawing of the rapid thermal anneal er of Fig. 1;
Fig. 3 is the structural representation according to the rapid thermal anneal er of another embodiment of the application;
Fig. 4 is the structural representation according to the substrate holder of the application's a embodiment, and wherein substrate holder has groove and places substrate;
Fig. 5 is an embodiment according to the application, the synoptic diagram of the array of halogen lamps that is arranged in parallel;
Fig. 6 is an embodiment according to the application, the slotting synoptic diagram that refers to the array of halogen lamps of arrangement.
Embodiment
What introduce below is a plurality of some in may embodiment of the present invention, aims to provide basic understanding of the present invention, is not intended to confirm key of the present invention or conclusive key element or limits claimed scope.Understand easily, according to technical scheme of the present invention, do not changing under the connotation of the present invention, but one of ordinary skill in the art can propose other implementation of mutual alternative.Therefore, following embodiment and accompanying drawing only are the exemplary illustrations to technical scheme of the present invention, and should not be considered as of the present invention all or be considered as qualification or restriction to technical solution of the present invention.
Fig. 1 is the structural representation according to the rapid thermal anneal er of the application's a embodiment.In Fig. 1,101 is crucible, is used to make the solid matter evaporation of atmosphere.102 is halogen lamp, is used to provide the rapid heating source.103 is substrate holder, is used to place substrate.104 is bracing frame, is used for support substrates frame and halogen lamp.105 is thermopair, is placed on respectively above the substrate, above the thermopair and in the crucible, and measures the interior temperature of substrate, halogen lamp and crucible respectively.106 for temperature control telltale, is used for displays temperature.107 is vacuum system, it can be a mechanical pump, or the array mode such as mechanical pump+lobe pump, mechanical pump+molecular pump, mechanical pump+diffusion pump of high vacuum more is provided, thereby for whole system provides vacuum environment, being implemented in vacuum or some needs annealing under the pure gas environment.108 is intake ducting, is used for gas is provided in chamber, is implemented in the gas annealing under gas condition.Although Fig. 1 schematically illustrates two cover air inlet systems, it will be understood by those skilled in the art that inlet system should be not limited to two covers.109 is mass flow controller, is used for the flow of pilot-gas.110 is the substrate holder standing bolt, and it can be used for fixing substrate holder, and can adjust the distance of substrate and halogen lamp.111 is the standing bolt of halogen lamp, and it can be used for fixing halogen lamp, and adjusts the distance between halogen lamp and crucible, halogen lamp and the substrate.112 is the vacuum chamber cover, and being used for provides vacuum environment or other closed environment desired seal effects to annealing.
Fig. 2 is the partial enlarged drawing of the rapid thermal anneal er of Fig. 1.In Fig. 2,201 is crucible, and it can be the crucible of graphite, quartz or other refractory ceramics classes.In a preferred embodiment, the mouth of pot area is greater than the window area that substrate holder exposes, and makes substrate carrying out thermal annealing under the atmosphere uniformly.Mouth of pot can be rectangle, circle, trapezoidal or any other suitable shape.In a preferred embodiment, the shape of mouth of pot can be selected according to substrate holder.202 is halogen lamp, and it can be the standard halogen lamp of 500w, 800w or 1000w power.203 is substrate holder.In a preferred embodiment, the shape of substrate holder can be as shown in Figure 4, and substrate holder has the groove that is used for placing substrate.204 is K type halogen lamp thermopair, is used to measure the temperature of halogen lamp.205 is K type crucible thermopair, is used to measure crucible temperature.206 is K type substrate thermopair, is used to measure substrate temperature.207 is the substrate holder standing bolt, can use the stationary substrate frame, and can adjust the distance of substrate and halogen lamp.208 is the standing bolt of halogen lamp, can be used for fixing halogen lamp, and adjusts the distance between halogen lamp and crucible, halogen lamp and the substrate.The standing bolt 208 of substrate holder standing bolt 207 and halogen lamp can pass through manual regulation.Certainly, it will be readily apparent to those skilled in the art that in this application the standing bolt 208 of substrate holder standing bolt 207 and halogen lamp can adopt other secured adjusted device (for example screw rod, nut etc.) to substitute, and regulative mode also is not limited to manually, and can realize by external controller.
In conjunction with Fig. 1 and Fig. 2, in a specific implementation, vacuum pump 107 vacuumizes the environment in the vacuum chamber cover 112 earlier, feeds shielding gas via intake ducting 109 in the vacuum chamber cover then.Environment (pressure, temperature etc.) in determining the vacuum chamber cover makes heating unit (halogen lamp 102,202 that is rapidly heated for example can be provided) work when satisfying processing requirement.Because heating unit is between substrate holder 103,203 and crucible 101,201, so the solid matter in the downward heating crucible 101,201 of heating unit, the upwards substrate in the heated substrate frame 103,203.Solid matter in the crucible 101,201 of below arrives substrate by the slit between the heating unit (for example halogen lamp 102,202), thereby provides needed atmosphere to substrate through pervaporation.When heating unit was worked, operator can control the flow that feeds the shielding gas in the vacuum chamber cover by the controlling quality flow director.Certainly, it will be understood by those skilled in the art that mass flow controller also can be controlled in real time by computer program.Temperature control telltale 106 shows the temperature in substrate, halogen lamp and the crucible in real time by the measurement of temperature-detecting device (for example K type thermopair 204,205 and 206).For instance, for example cross when slow when the heat-up rate of finding substrate, the technician can consider to regulate the standing bolt 111,208 of substrate holder standing bolt 110,207 or halogen lamp, to dwindle the distance between substrate holder and the halogen lamp.In this example since substrate be placed in the substrate holder 103,203 (do not exist and heating unit between relatively move), thereby this rapid thermal anneal er belongs to static annealing device.
Fig. 3 is the structural representation according to the rapid thermal anneal er of another embodiment of the application.In Fig. 3,301 is halogen lamp.302 is graphite, quartz or other resistant to elevated temperatures ceramic crucibles, and its size is determined according to the size of film size.In a preferred embodiment, the width of crucible should be slightly larger than the width of film, and the length of crucible should be determined according to annealing time and process requirements.303 are needs annealed film-substrate.304 is power wheel, and it is used for support substrates and drives substrate moving.305 is chamber door, is used for the discrepancy of sample (for example substrate).306 is sealed chamber, and it can external as shown in Figure 1 vacuum system and airing system.
In a specific implementation, environment (pressure, temperature etc.) in determining sealed chamber is when satisfying processing requirement, make heating unit (halogen lamp 301 that is rapidly heated for example can be provided) work, meanwhile or afterwards power wheel 303 drives substrates and moves.Because heating unit is between power wheel 303 and crucible 302, the solid matter in the downward heating crucible 302 of heating unit upwards heats the substrate on the power wheel 303.Solid matter in the crucible 302 of below arrives substrate by the slit between the heating unit, thereby provides needed atmosphere to substrate through pervaporation.Be necessary to point out that heating unit (for example halogen lamp 301) can be controlled intensification by external control unit, and the speed of power wheel 303 can be controlled also by the external control unit.In addition, as described above, also can external as shown in Figure 1 vacuum system and airing system in the vacuum chamber cover, just repeat no more at this.
In this example, because substrate is placed on the power wheel 303, exist between substrate and heating unit, the crucible to relatively move, thereby this rapid thermal anneal er belongs to and adopts the part dynamic annealing device of method for annealing (be film is moving, crucible static) successively.Because walking about, film-substrate realizes atmosphere annealing above crucible, the time that the length of crucible and the gait of march of film decision film stop in the atmosphere zone of heating, therefore in a preferred embodiment, the length of crucible can be determined according to annealing time and process requirements.
In addition, for the homogeneity that guarantees to heat, heating unit can adopt to be arranged in parallel and to insert and refer to that the array of halogen lamps of arranging realizes among Fig. 1 to 3.Fig. 5 is an embodiment according to the application, the synoptic diagram of the array of halogen lamps that is arranged in parallel, and Fig. 6 be according to the application an embodiment, insert the synoptic diagram that refers to the array of halogen lamps of arranging.
The array of halogen lamps that is arranged in parallel shown in Figure 5 is applicable to the small area film.In a preferred embodiment, the distance between the halogen lamp is between 1 to 5 centimetre, and whole array is the plane, and planeness is ± 5 millimeters.The number that it will be understood by those skilled in the art that the halogen lamp arrangement can be adjusted according to the size of film.The halogen lamp that is arranged in parallel shown in Figure 5 has advantages such as easy for installation.
The array of halogen lamps that slotting finger shown in Figure 6 is arranged is applicable to large area film.In a preferred embodiment, halogen lamp 1/2 the halogen lamp length that staggers mutually, row are 1 to 5 centimetre with distance between being listed as, and array is the plane, and planeness is ± 5 millimeters.The area of array of halogen lamps annealed area is as required adjusted.For large area film, because the limited length of halogen lamp uses the array of halogen lamps heating that is arranged in parallel can cause the film local temperature inhomogeneous, the array of halogen lamps of inserting the finger arrangement then can overcome this well and heat uneven problem.
Above example has mainly illustrated the realization of the application's rapid thermal anneal er.Although only the some of them specific embodiment is described, those of ordinary skills should understand, and the present invention can be in not departing from its purport and scope implements with many other forms.Therefore, example of being showed and embodiment are regarded as illustrative and not restrictive, and under the situation that does not break away from defined spirit of claim and scope, the application may contain various modifications and replacement.
In sum, the application's rapid thermal anneal er can provide being rapidly heated of 45 ℃/s and can be implemented in carries out thermal annealing under the particular atmosphere, satisfy the needs of Production Example such as thin-film solar cells etc.Simultaneously, for the homogeneity that guarantees to heat, the application's rapid thermal anneal er can adopt the array of halogen lamps that is arranged in parallel or inserts the finger arrangement.In addition, except can using solid atmosphere, the application's rapid thermal anneal er also can external vacuum system and airing system, thereby realizes the short annealing under vacuum and the shielding gas environment, has satisfied the needs of multiple application.
Claims (17)
1. rapid thermal anneal er comprises:
The substrate supporting unit is used to put substrate;
Crucible is placed the solid matter that is used to make atmosphere therein; And
Heating unit places between described substrate and the described crucible, is used for making the solid matter evaporation of described crucible and upwards heats substrate in the described substrate holder.
2. rapid thermal anneal er as claimed in claim 1, wherein, described substrate supporting unit is a substrate holder, described substrate is supported by substrate holder.
3. rapid thermal anneal er as claimed in claim 1, wherein, described substrate supporting unit is a power wheel, described substrate is supported by power wheel, and is moved by described power wheel drive substrate.
4. rapid thermal anneal er as claimed in claim 1, halogen lamp or the array of halogen lamps of wherein said heating unit for the rapid heating source can be provided.
5. rapid thermal anneal er as claimed in claim 4, wherein said array of halogen lamps is by being arranged in parallel.
6. rapid thermal anneal er as claimed in claim 5, wherein in described array of halogen lamps, the spacing between the halogen lamp is 1 to 5 centimetre, planeness is ± 5 millimeters.
7. rapid thermal anneal er as claimed in claim 4, wherein said array of halogen lamps is arranged by inserting finger-like.
8. rapid thermal anneal er as claimed in claim 7, wherein, in described array of halogen lamps, halogen lamp 1/2 the halogen lamp length that staggers mutually, row are 1 to 5 centimetre with distance between being listed as, planeness is ± 5 millimeters.
9. rapid thermal anneal er as claimed in claim 1, wherein said crucible are plumbago crucible, quartz crucible or other resistant to elevated temperatures ceramic crucible.
10. rapid thermal anneal er as claimed in claim 1, the width of wherein said crucible is greater than the width of film.
11. rapid thermal anneal er as claimed in claim 2, wherein said substrate holder has the groove that is used to place substrate, wherein will carry out the annealed substrate surface and place downwards.
12. rapid thermal anneal er as claimed in claim 1 also comprises:
Vacuum system is used to realize the vacuum of rapid thermal anneal er.
13. rapid thermal anneal er as claimed in claim 12, wherein said vacuum system are mechanical pump, lobe pump, molecular pump, diffusion pump or its arbitrary combination.
14. rapid thermal anneal er as claimed in claim 1 also comprises:
Airing system is used to provide shielding gas, so that be implemented in the shielding gas annealing under the specific gas condition.
15. rapid thermal anneal er as claimed in claim 1 also comprises:
The first secured adjusted device, the described first secured adjusted device is used for fixing the substrate supporting unit, and regulates the distance between substrate and the heating unit; With
The second secured adjusted device, the described second secured adjusted device is used for fixing heating unit, and regulates the distance between described heating unit and described crucible, described heating unit and the described substrate supporting unit.
16. rapid thermal anneal er as claimed in claim 1 also comprises:
Be respectively applied for first, second and the 3rd temperature-detecting device of measuring temperature in substrate, heating unit and the crucible.
17. rapid thermal anneal er as claimed in claim 16, wherein said first, second and the 3rd temperature-detecting device are K type thermopair.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210018609 CN103215650A (en) | 2012-01-20 | 2012-01-20 | Rapid thermal annealing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210018609 CN103215650A (en) | 2012-01-20 | 2012-01-20 | Rapid thermal annealing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103215650A true CN103215650A (en) | 2013-07-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210018609 Pending CN103215650A (en) | 2012-01-20 | 2012-01-20 | Rapid thermal annealing apparatus |
Country Status (1)
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|---|---|
| CN (1) | CN103215650A (en) |
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2012
- 2012-01-20 CN CN 201210018609 patent/CN103215650A/en active Pending
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Application publication date: 20130724 |