CN103208563A - Method for forming good ohmic contact between poly-crystal mercury iodide thin film and gold electrode - Google Patents
Method for forming good ohmic contact between poly-crystal mercury iodide thin film and gold electrode Download PDFInfo
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- CN103208563A CN103208563A CN2013101116903A CN201310111690A CN103208563A CN 103208563 A CN103208563 A CN 103208563A CN 2013101116903 A CN2013101116903 A CN 2013101116903A CN 201310111690 A CN201310111690 A CN 201310111690A CN 103208563 A CN103208563 A CN 103208563A
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Abstract
The invention relates to a method for forming good ohmic contact between a poly-crystal mercury iodide thin film and a gold electrode and belongs to the technical field of semiconductor thick film preparation. The method is characterized in that mercury iodide purified for multiple times serve as the raw material, an ultrasound-assisted vapor deposition device is adopted to produce a poly-crystal mercury iodide thin film, the poly-crystal mercury iodide thin film is subjected to surface processing, and finally a layer of gold electrode array is evaporated in vacuum mode. By aid of the method, good metal-conductor contact can be achieved, the gold electrode and the thin film have good adhesion, I-V positive and negative response characteristics are good, metal electrode leaked current is small, and the performance is stable. A poly-crystal mercury iodide thick film detector produced in the method is especially suitable for detection for X rays and gama rays, and therefore the method has a potential practical application prospect.
Description
Technical field
The present invention relates to a kind of multi-crystal Hg iodide film and form the preparation method that good ohmic contacts with gold electrode, belong to the semiconductor thick film preparing technical field.
Background technology
The room temperature semiconductor detector is considered to a kind of desirable detector, it had both had the characteristics of cryogenic semiconductor detector energy good resolution, the good advantage of scintillation crystal detectors detection efficient is arranged again, characteristics such as its volume of while is little, in light weight, easy to carry have been widely used in fields such as environmental monitoring, nuclear medicine.And the mercuric iodixde detector is considered to a kind of desirable nuclear radiation detector, because it has that energy gap is big, atomic number is high, resistivity is high, absorption cross-section is big and advantage such as the body electric current is little during room temperature.Mercuric iodixde is a kind of photoconductive material of excellent performance, often is used to prepare nuclear radiation detector.Wherein, the multi-crystal Hg iodide material is because dark current is little, to X ray, energy of good resolution and can realize characteristics such as large tracts of land deposition, the ideal that has become X ray flat panel imaging system one of is selected, and has a wide range of applications in fields such as environmental monitoring, nuclear medicine, safety inspection, industrial nondestructive testing, nuclear radiation detection, Aero-Space, astrophysics and high-energy physics simultaneously.
At present, the deposition process of multi-crystal Hg iodide thick film: the SP(silk screen print method), the PVD(physical vaporous deposition), LA(laser ablation method), the HP(pressure sintering) and the PIB(binder method) etc.At present, the foreign study person mainly directly is deposited on the mercuric iodixde raw material on the thin-film transistor pel array face by physical vapour deposition (PVD) or binder method, preparation 10 * 10cm
2With 20 * 25cm
2Detector, be used for research aspect medical science radiant image and nondestructive industrial detection imaging, obtained the better image quality.
Summary of the invention
Defective at the prior art existence, the purpose of this invention is to provide a kind of multi-crystal Hg iodide film and form the preparation method that good ohmic contacts with gold electrode, can obtain gold half contact preferably by this method, good adhesiveness is arranged between gold electrode and the film, the positive and negative response characteristic of I-V is all better, the metal electrode leakage current is little, stable performance.The multi-crystal Hg iodide thick film detector that this method prepares is particularly suitable for the detection to X ray, Gama ray.
For achieving the above object, the present invention adopts following technical proposals:
A kind of multi-crystal Hg iodide film forms the preparation method that good ohmic contacts with gold electrode, has following technical process and step:
A. the preparation of multi-crystal Hg iodide film: after earlier TFT substrate, film growth body, vacuum cock lid being soaked half an hour with acetone, alcohol-pickled half an hour is used in ultrasonic cleaning 15 minutes again, ultrasonic cleaning 15 minutes; Wash repeatedly six times with deionized water then, oven dry is put into the film growth pipe with TFT substrate and high-purity mercuric iodixde, use ultrasonic auxiliary vapor phase growing apparatus to deposit multi-crystal Hg iodide film at the TFT substrate, sedimentation time is 2h, and depositing temperature is 90 ℃, and deposition frequency is 35KHz;
B. multi-crystal Hg iodide film surface treatment: with the multi-crystal Hg iodide film for preparing, with the two-sided mechanical polishing of silk, and then carry out chemical etch polishing with KI solution, etching time is 5min, take out then, multi-crystal Hg iodide film is placed on cleans 30min in the ultrasonic cleaner, the deionized water with 18M Ω washes repeatedly again, oven dry exposes 24h in the atmosphere of cleaning;
C. surface treated multi-crystal Hg iodide film is put into the vacuum evaporation coating machine, put into the spun gold of 2g at the evaporation boat, multi-crystal Hg iodide film is placed on the square dot electrod-array mask plate, open mechanical pump and diffusion pump respectively, cavity is carried out pumping high vacuum, and vacuum degree reaches 10
-4Pa, during evaporation between evaporation boat and the polycrystalline film distance be 10cm, the evaporation time is 2min, evaporation current is 200A, obtaining a bed thickness is 100nm, area is 9mm
2The gold electrode array.
Compared with prior art, the present invention has following outstanding substantive distinguishing features and obvious improvement:
By vacuum evaporator evaporation one deck gold electrode array on multi-crystal Hg iodide film, good adhesiveness is arranged between gold electrode and the film, it is carried out I-V curve phenetic analysis, the analysis showed that between electrode and the film and formed good Ohmic contact, forward and reverse characteristic is symmetry relatively, the metal electrode leakage current is little, stable performance.Easy operating of the present invention, the multi-crystal Hg iodide film detector that makes can be used for the detection to X ray, Gama ray.
Description of drawings
The multi-crystal Hg iodide film electrode profile that Fig. 1 makes for the inventive method.
The multi-crystal Hg iodide film electrode vertical view that Fig. 2 makes for the inventive method.
Fig. 3 is multi-crystal Hg iodide film electrode preparation installation drawing.
Fig. 4 is multi-crystal Hg iodide film I-V curve chart.
Embodiment
Now details are as follows by reference to the accompanying drawings with the preferred embodiments of the present invention:
As shown in Figure 3, a kind of multi-crystal Hg iodide film forms the preparation method that good ohmic contacts with gold electrode, has following technical process and step:
A. the preparation of multi-crystal Hg iodide film: after earlier TFT substrate, film growth body, vacuum cock lid being soaked half an hour with acetone, alcohol-pickled half an hour is used in ultrasonic cleaning 15 minutes again, ultrasonic cleaning 15 minutes; Wash repeatedly six times with deionized water then, oven dry is put into the film growth pipe with TFT substrate and high-purity mercuric iodixde, use ultrasonic auxiliary vapor phase growing apparatus to deposit multi-crystal Hg iodide film at the TFT substrate, sedimentation time is 2h, and depositing temperature is 90 ℃, and deposition frequency is 35KHz;
B. multi-crystal Hg iodide film surface treatment: with the multi-crystal Hg iodide film for preparing, with the two-sided mechanical polishing of silk, and then carry out chemical etch polishing with KI solution, etching time is 5min, take out then, multi-crystal Hg iodide film is placed on cleans 30min in the ultrasonic cleaner, the deionized water with 18M Ω washes repeatedly again, oven dry exposes 24h in the atmosphere of cleaning;
C. surface treated multi-crystal Hg iodide film is put into the vacuum evaporation coating machine, put into the spun gold of 2g at the evaporation boat, multi-crystal Hg iodide film is placed on the square dot electrod-array mask plate, open mechanical pump and diffusion pump respectively, cavity is carried out pumping high vacuum, and vacuum degree reaches 10
-4Pa, during evaporation between evaporation boat and the polycrystalline film distance be 10cm, the evaporation time is 2min, evaporation current is 200A, obtaining a bed thickness is 100nm, area is 9mm
2The gold electrode array.
The multi-crystal Hg iodide film electrode that the inventive method makes as depicted in figs. 1 and 2, with multi-crystal Hg iodide by ultrasonic auxiliary vapour deposition on the TFT substrate, again by the vacuum evaporation gold electrode.
Gained multi-crystal Hg iodide film electrode detects through instrument in the present embodiment, and its testing result as shown in Figure 4.
Fig. 4 is polycrystalline HgI
2Film I-V curve chart, (Keithley 4200-SCS), adopts the polycrystalline HgI of ultrasonic auxiliary vapour deposition preparation to adopt the detection of characteristic of semiconductor analyzer
2Film and gold electrode form good Ohmic contact, and forward and reverse I-V characteristic is symmetry relatively, and resistivity is 10
11The ohmage magnitude, resistivity is better, and dark current is little, the better performances of the multi-crystal Hg iodide detector that obtains.
Claims (1)
1. a multi-crystal Hg iodide film forms the preparation method that good ohmic contacts with gold electrode, it is characterized in that having following technical process and step:
A. the preparation of multi-crystal Hg iodide film: after earlier TFT substrate, film growth body, vacuum cock lid being soaked half an hour with acetone, alcohol-pickled half an hour is used in ultrasonic cleaning 15 minutes again, ultrasonic cleaning 15 minutes; Wash repeatedly six times with deionized water then, oven dry is put into the film growth pipe with TFT substrate and high-purity mercuric iodixde, use ultrasonic auxiliary vapor phase growing apparatus to deposit multi-crystal Hg iodide film at the TFT substrate, sedimentation time is 2h, and depositing temperature is 90 ℃, and deposition frequency is 35KHz;
B. multi-crystal Hg iodide film surface treatment: with the multi-crystal Hg iodide film for preparing, with the two-sided mechanical polishing of silk, and then carry out chemical etch polishing with KI solution, etching time is 5min, take out then, multi-crystal Hg iodide film is placed on cleans 30min in the ultrasonic cleaner, the deionized water with 18M Ω washes repeatedly again, oven dry exposes 24h in the atmosphere of cleaning;
C. surface treated multi-crystal Hg iodide film is put into the vacuum evaporation coating machine, put into the spun gold of 2g at the evaporation boat, multi-crystal Hg iodide film is placed on the square dot electrod-array mask plate, open mechanical pump and diffusion pump respectively, cavity is carried out pumping high vacuum, and vacuum degree reaches 10
-4Pa, during evaporation between evaporation boat and the polycrystalline film distance be 10cm, the evaporation time is 2min, evaporation current is 200A, obtaining a bed thickness is 100nm, area is 9mm
2The gold electrode array.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113121123A (en) * | 2021-03-17 | 2021-07-16 | 上海科技大学 | Preparation method of crystal particle electrode with uniform crystal face orientation characteristic |
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| US20040178426A1 (en) * | 2001-06-19 | 2004-09-16 | Leonid Melekhov | Laminated semiconductor radiation detector |
| CN101122007A (en) * | 2007-09-12 | 2008-02-13 | 上海大学 | Method for preparing mercuric iodide film under ultrasound wave |
| CN101262026A (en) * | 2008-02-26 | 2008-09-10 | 上海大学 | Method for making multi-crystal Hg iodide film room temperature nucleus emission detector |
| CN102337588A (en) * | 2011-10-31 | 2012-02-01 | 上海大学 | Preparation method of polycrystalline mercuric iodide thick film with high orientation |
| CN102517544A (en) * | 2011-12-29 | 2012-06-27 | 上海大学 | Method for producing polycrystal mercuric iodide thick films by vacuum evaporation and vapor phase deposition under action of ultrasonic wave |
| CN102881764A (en) * | 2012-09-11 | 2013-01-16 | 上海大学 | Method for preparing polycrystalline mercury iodide detector by X-ray imaging |
| CN102956750A (en) * | 2012-11-21 | 2013-03-06 | 上海大学 | Preparation method for gold-palladium electrode of polycrystalline mercury iodide detector |
-
2013
- 2013-04-02 CN CN2013101116903A patent/CN103208563A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040178426A1 (en) * | 2001-06-19 | 2004-09-16 | Leonid Melekhov | Laminated semiconductor radiation detector |
| CN101122007A (en) * | 2007-09-12 | 2008-02-13 | 上海大学 | Method for preparing mercuric iodide film under ultrasound wave |
| CN101262026A (en) * | 2008-02-26 | 2008-09-10 | 上海大学 | Method for making multi-crystal Hg iodide film room temperature nucleus emission detector |
| CN102337588A (en) * | 2011-10-31 | 2012-02-01 | 上海大学 | Preparation method of polycrystalline mercuric iodide thick film with high orientation |
| CN102517544A (en) * | 2011-12-29 | 2012-06-27 | 上海大学 | Method for producing polycrystal mercuric iodide thick films by vacuum evaporation and vapor phase deposition under action of ultrasonic wave |
| CN102881764A (en) * | 2012-09-11 | 2013-01-16 | 上海大学 | Method for preparing polycrystalline mercury iodide detector by X-ray imaging |
| CN102956750A (en) * | 2012-11-21 | 2013-03-06 | 上海大学 | Preparation method for gold-palladium electrode of polycrystalline mercury iodide detector |
Non-Patent Citations (4)
| Title |
|---|
| LEI MA, ET AL.: "Effect of Seed Layers Prepared by Vertical Deposition Method on the Growth and Properties of Oriented Polycrystalline α-HgI2 Films", 《ADVANCED MATERIALS RESEARCH》, vol. 311313, 16 August 2011 (2011-08-16), pages 1237 - 1241 * |
| 郑耀明: "超声波作用下多晶碘化汞膜的制备及其探测器的研究", 《万方数据学位论文》, 16 February 2009 (2009-02-16), pages 15 - 51 * |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113121123A (en) * | 2021-03-17 | 2021-07-16 | 上海科技大学 | Preparation method of crystal particle electrode with uniform crystal face orientation characteristic |
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Application publication date: 20130717 |