CN103199804A - Wideband amplifier with high-power feedback structure - Google Patents
Wideband amplifier with high-power feedback structure Download PDFInfo
- Publication number
- CN103199804A CN103199804A CN2012100037628A CN201210003762A CN103199804A CN 103199804 A CN103199804 A CN 103199804A CN 2012100037628 A CN2012100037628 A CN 2012100037628A CN 201210003762 A CN201210003762 A CN 201210003762A CN 103199804 A CN103199804 A CN 103199804A
- Authority
- CN
- China
- Prior art keywords
- feedback
- bridge
- resistance
- amplifier
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Amplifiers (AREA)
Abstract
The invention discloses a wideband power amplifier with a novel high-power feedback structure, and the feedback structure is widely applied to the design of an amplifier to increase the bandwidth. Conventionally, the feedback way is that a feedback resistor or an axial resistor is welded above a transistor, or that a chip resistor or a circuit on the printed circuit board is adopted to form the whole feedback pathway, however, each way has own limitation, the axial resistor is poor in radiating ability and can not bear high power, while the feedback pathway on the printed circuit board is very long and easily causes oscillation as a positive feedback is obtained at high frequency, accordingly, the stable working frequency of the amplifier adopting the feedback way can not be very high. The feedback structure provided by the invention has a good radiating way and a short feedback path, and can work at very high frequency. The feedback structure has been successfully applied to a novel power transistor- gallium nitride transistor with low parasitic capacitance and high matched impedance, obtaining the power amplifier with extreme high output power and extreme wide wideband; and the performance and stability of the power amplifier are further improved through optimizing a matching network. The power amplifier adopting the negative feedback structure is proved to be capable of achieving unconditional stability in wider band frequency.
Description
Technical field
Patent of the present invention relates to a kind of power amplifier (power amplifier is called for short in the back) design with novel feedback arrangement.
Background technology
Feedback arrangement often is used to Amplifier Design to increase bandwidth, improves the linearity etc.It also helps promotes the input and output impedance matching.Common feedback arrangement comprises a resistance and a capacitance.It connects transistorized input and output, is used as negative feedback more.When being used for low-power circuit, feedback arrangement often is placed on the printed circuit board (PCB) in the discrete circuit or on the substrate of integrated circuit.The rated power of feedback resistance is generally very low.
The flange mount encapsulation commonly used of transistor in the power amplifier because this encapsulation can make transistor wafer good heat dissipation, and is placed on the metallic support easily.But this encapsulation is bigger than the encapsulation volume that general low-power circuit uses.If feedback arrangement is placed on the printed circuit board (PCB), wiring must be walked around flange mount encapsulation, so whole feedback path is very long, thereby increases phase delay, and negative feedback becomes positive feedback when causing high frequency, and amplifier will job insecurity, even concussion.
Because the electronics translational speed is slower in the silicon transistor, the broadband power amplifier of use silicon transistor is generally the highest can only use the 1GHz frequency.Emerging GaN transistor can be exported very high power, also can reach very high-frequency.If the feedback arrangement of long feedback path is used on the GaN transistor, the transistorized big gain when high frequency of GaN is easy to cause concussion to take place.
Axial resistance frame can be shortened feedback path on the transistor of flange mount encapsulation.Specific practice is, an electric capacity is attached to a transistorized side, and axially a pin of resistance connects electric capacity, and a pin connects transistorized opposite side.But so axial resistance can only dispel the heat in air, has limited the power bearing capacity of circuit.For avoiding this situation, the resistance volume must increase.The resistance length that increases can cause bigger phase delay again, and the limit feedback structure keeps degenerative frequency range, thus the steady operation bandwidth of limiting amplifier.
Patent of the present invention has proposed a kind of brand-new feedback arrangement.It uses a kind of very compact radiator structure, thereby it is minimum that feedback path length is dropped to, and guarantees that the broadband power amplifier is exported in high-frequency still to keep unconditional stable when high-power very much.
?
Summary of the invention
Patent of the present invention relates to a kind of power amplifier with novel feedback arrangement.In one embodiment, this amplifier is proved and can exports the power that surpasses 20W in the ultra wide bandwidth of 20MHz-2500MHz.It combines a kind of novel power transistor---GaN transistor---and a kind of advantage of high power feedback arrangement of uniqueness.The GaN transistor has very high puncture voltage and the matched impedance that many bigger than other conventional transistor, is well suited for for wide-band amplifier.Use the GaN transistor, amplifier can be at the wideer higher power of frequency band output.The feedback arrangement that patent of the present invention provides can dispel the heat in a large number, and phase delay is reduced to minimum, thereby the transistorized advantage of GaN is not fully exerted.This feedback arrangement comprises a metal bridge and a power resistor that is attached on the bridge.This metal bridge strides across the transistor of flange mount encapsulation.The bipod of bridge has perforation, and screw is simultaneously pasting transistor to metal bridge by perforation and is being fixed on the metallic support.Power resistor is placed on the different surfaces of metal bridge, the printed wiring on the connecting circuit plate of resistance pin one side, and another side connects an electric capacity.
In one embodiment, metal bridge is fixed on earlier in the transistorized flange mount encapsulation, is fixed on the metallic support again.The heat that produces on the resistance diffuses on the metallic support by metal bridge and flange mount encapsulation.Directly compare to air or circuit board heat radiation with resistance, the thermal impedance of this feedback arrangement reduces greatly, thereby can carry high power, is applicable to very high-power amplifier system.
Because the phase delay of feedback path is lowered to minimum, by optimizing matching network, amplifier can be in very wide bandwidth steady operation.Patent of the present invention is first stable ultra broadband feedback-type GaN amplifier.
It is minimum that special structure and material makes that the thermal impedance between resistance and metallic support drops to.In one embodiment, resistance can carry the power greater than 10 watts.Make bridge if increase metal bridge area or use have the material of better heat-conductive characteristic, load power can further improve.Feedback resistance will carry very high-powerly in the ultra broadband amplifier, and the thermal impedance performance of therefore improving feedback resistance helps to improve the power output capacity of amplifier system very much.Simultaneously and since resistance be direct frame above transistor, feedback path reaches and minimizes.Such structure can be used for being operated in the amplifier of a few GHz frequencies.
The design of feedback amplifier not only can be used the GaN transistor, high power feedback arrangement in the patent of the present invention can also cooperate high performance silicon, carborundum or GaAs transistor (as LDMOS or GaAs MESFET, pHEMT) and their integrated circuit use, be implemented in output high-power in the utmost point broadband.
The multi-level feedback amplifier can cascade to increase Amplifier Gain.Join by the optimization level lump, casacade multi-amplifier can be at wideer bandwidth output high-power, and keeps unconditional stability.
The feedback arrangement of patent of the present invention can also be promoted the linearity of amplifier.Use this high power feedback arrangement can realize linear high power feedback amplifier.
Description of drawings
Below in conjunction with drawings and Examples patent of the present invention is described further.
Fig. 1 is the transistor junction composition that has the flange mount encapsulation.
Fig. 2 is the metal bridge structure chart for the feedback resistance heat transmission.
Fig. 3 is high power Chip-R structure chart.
Fig. 4 is the perspective view that is installed at the feedback arrangement on the transistor.
Fig. 5 is the perspective view that is installed at the feedback arrangement on the transistor among the another kind of embodiment.
Fig. 6 is the perspective view that is installed at the feedback arrangement on the transistor among the third embodiment.
Embodiment
Patent of the present invention has been described a kind of wideband power amplifer that uses the high power feedback arrangement.Feedback resistance can make active device flat gain in wider frequency, and improves the impedance matching of input and output.The paster power resistor is placed on the metal bridge as feedback resistance, can improve the power bearing capacity of resistance.Again this metal crane span structure above active device to shorten feedback path, just constituted a kind of high power feedback arrangement.A high power active device can be made the high power wide-band amplifier in conjunction with a kind of like this feedback arrangement.
Active device in the amplifier zooms into large-signal output to the small-signal of input.This active device can be a transistor, also can be integrated circuit.In the embodiment that recommends, constitute active device by a transistor.Most high power transistors all use the flange mount encapsulation, as shown in Figure 1.In Fig. 1, transistor 100 has a metallic substrates 101 and a ceramic segment.Ceramic segment comprises a ceramic enclosure wall 103 and a ceramic cover plate 104.Metal pins 105 and 107 passes ceramic segment input and output radio frequency and direct current signal.Pin 107 is at input, and pin 105 is at output.Above substrate 101, there are one or more transistor wafers or IC(integrated circuit in ceramic segment 102 inside).Area of knockout 106 is arranged on the metallic substrates 101.Some embodiment middle punch has replaced area of knockout 106.Screw passes area of knockout 106 whole encapsulation is fixed on the metallic support.This structure has better heat radiating effect.In other embodiments, transistor uses no flange encapsulation, and namely the size of metallic substrates is identical with ceramic segment.
Among the embodiment shown in Figure 2, specification and the transistor of metal bridge 200 are complementary.There is individual groove 201 in metal bridge central authorities, can hold the ceramic segment 102 of flange mount packaged transistor.The groove 201 of bridge is than ceramic segment 102 height of flange mount encapsulation, like this when 200 of metal bridge are in flange mount encapsulation 100, on the groove 202 and ceramic cover plate 104 tops remain with the gap.Punch hole 203 at bridge post 204.Area of knockout 106 couplings in the position of these perforation and the flange mount encapsulation.The shape of metal bridge is not limited to instead " U " shape.In other embodiments, it can have only a bridge post and a screw, resembles a metal derby.In other embodiments, bridge also can be made with the good nonmetallic materials of other thermal conductivity.
High-power resistor 300 is as feedback resistance.High-power resistor 300 can add metal pad 302 and 304 at positive two ends, shown in Fig. 3 (a), also can add pad 301 overleaf, shown in Fig. 3 (b).Resistive element 303 is made with AlN or BeO substrate usually.Such resistance substrate has very high pyroconductivity, can dispel the heat well.
In the embodiment shown in fig. 4, bridge 200, resistance 300 and transistor 100 are assemblied on the support 401 together.Screw 402 passes the bridge post 204 of bridge 200 and the area of knockout 106 on the transistor package substrates 101, and bridge 200 and transistor 100 are fixed on the support 401 together.Resistance 300 is attached to the upper surface of bridge 200.Input track 405 is imprinted on the input printed circuit board 403, and output track 406 is imprinted on the output printed circuit board 404.In one embodiment, a ceramic condenser 407 is placed on the input track 405, the one side 408 of electric capacity is welded on the line 405, the pad 304 of another side 409 and resistance 300 is connected by an one metal wire 410, and another pad 302 of resistance 300 is connected on the output track 406 by wire 411.In other embodiments, electric capacity 407 can be the electric capacity of other kind, as tantalum electric capacity or electrochemical capacitor.Wire 410 and 411 can replace with metal tape or printed circuit lines.
The bridge post 204 of bridge 200 directly contacts the substrate 101 of flange mount encapsulation, substrate 101 contact supports.Can fill heat-conducting glue or other filler between the contact-making surface with the deaeration gap.So just arrive bridge 200 at resistance substrate 303, between support 401, provide a thermal dissipating path for resistance 300 by bridge post 204 and flange mount package substrates 101 again.Heat finally imports on the fin that support connects.
In the embodiment shown in fig. 5, resistance 300 is attached to the bottom surface of bridge 200.Resistance 300 is arranged in the groove 201 of bridge 200, is welded on the inner surface 202 of bridge 200.Wire 410 is connected in an end of resistance on the electric capacity 407; Wire 411 is connected in the other end of resistance on the output track 406.
In the embodiment shown in fig. 6, resistance 300 is positioned at the side of bridge 200, is attached on the bridge post 204 of bridge 200.Wire 410 is connected in an end of resistance on the electric capacity 407; Wire 411 is connected in the other end of resistance on the output track 406.
Electric capacity 407 is used for cutting off the direct voltage from the transistor output to input.Wire 410 connects the pad 304 of input track 405 and resistance 300; Wire 411 connects the pad 302 of resistance 300 and the upper end 409 of electric capacity.In other embodiments, it is inner that capacitance is placed on the transistor encapsulation, and then feedback arrangement does not comprise capacitance.
In a further embodiment, resistance can adopt axial resistance.Also can be attached to the metal bridge surface to epoxy resin, heat is imported support by bridge.
In a further embodiment, transistorized package substrates can be measure-alike with ceramic segment.Like this, metal bridge strides across transistor and directly is connected on the support.
In one embodiment, transistor 100 is gallium nitride (GaN) transistors.The amplifier frequency range reaches 20MHz to 2500MHz.In whole bandwidth, power output has all reached more than 20 watts.Other embodiment also may realize more performance.
Because it is minimum that feedback path length has dropped to, amplifier can be in broadband steady operation.Amplifier in this patent invention is first item broadband stable high power GaN feedback amplifier.
Transistor also can use the transistor of other type.Feedback arrangement in this patent invention can cooperate silicon, carborundum or GaAs transistor (as LDMOS or GaAs MESFET, pHEMT) and their integrated circuit use, be implemented in output high-power in the utmost point broadband.
Although patent of the present invention provides various embodiments, being familiar with these those skilled in the art still can be to the embodiment beneficial effect of simple change to realize that patent of the present invention is mentioned in addition.These apparent variations all have been encompassed in the patent of the present invention.
Claims (26)
1. a broadband feedback power amplifier is made of an active device and a feedback arrangement; Feedback arrangement is made of a bridge and a resistance, and resistance is attached on the bridge, and spanning is on active device.
2. amplifier according to claim 1 is characterized in that active device is the GaN(gallium nitride) device.
3. amplifier according to claim 1 is characterized in that active device is silicon device.
4. amplifier according to claim 1 is characterized in that active device is transistor.
5. amplifier according to claim 1 is characterized in that active device is integrated circuit.
6. amplifier according to claim 1 is characterized in that active device adopts the flange mount encapsulation.
7. amplifier according to claim 1 is characterized in that bridge makes with metal.
8. amplifier according to claim 1 is characterized in that bridge makes with the nonmetallic materials of high thermal conductivity.
9. amplifier according to claim 1 is characterized in that bridge has a groove at least.
10. amplifier according to claim 1, it is characterized in that bridge be one not with the module of groove.
11. amplifier according to claim 1 is characterized in that resistance is surface patch resistance.
12. amplifier according to claim 1 is characterized in that resistance is attached to the upper surface of bridge.
13. amplifier according to claim 1 is characterized in that resistance is attached to the inner surface of bridge.
14. amplifier according to claim 1 is characterized in that resistance is attached to the side of bridge.
15. the feedback arrangement that power amplifier is used comprises a bridge and a resistance, resistance is attached on the bridge.
16. feedback arrangement according to claim 15 is characterized in that spanning is on active device.
17. feedback arrangement according to claim 16 is characterized in that active device is the GaN(gallium nitride) device.
18. feedback arrangement according to claim 16 is characterized in that active device is silicon device.
19. feedback arrangement according to claim 15 is characterized in that bridge makes with metal.
20. feedback arrangement according to claim 15 is characterized in that bridge makes with the nonmetallic materials of high thermal conductivity.
21. feedback arrangement according to claim 15 is characterized in that bridge has a groove at least.
22. feedback arrangement according to claim 15, it is characterized in that bridge be one not with the module of groove.
23. feedback arrangement according to claim 15 is characterized in that resistance is surface patch resistance.
24. feedback arrangement according to claim 15 is characterized in that resistance is attached to the upper surface of bridge.
25. feedback arrangement according to claim 15 is characterized in that resistance is attached to the inner surface of bridge.
26. feedback arrangement according to claim 15 is characterized in that resistance is attached to the side of bridge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100037628A CN103199804A (en) | 2012-01-09 | 2012-01-09 | Wideband amplifier with high-power feedback structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100037628A CN103199804A (en) | 2012-01-09 | 2012-01-09 | Wideband amplifier with high-power feedback structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103199804A true CN103199804A (en) | 2013-07-10 |
Family
ID=48722193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100037628A Pending CN103199804A (en) | 2012-01-09 | 2012-01-09 | Wideband amplifier with high-power feedback structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103199804A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111525263A (en) * | 2020-04-29 | 2020-08-11 | 广州程星通信科技有限公司 | Full-airspace multilayer three-dimensional phased array antenna |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010005025A1 (en) * | 1998-01-26 | 2001-06-28 | Lg Electronics Ins. | Heterojunction bipolar transistor and its fabrication method |
| CN1495901A (en) * | 2001-11-01 | 2004-05-12 | M/A-Com | Power amplifier with base stripe and collector stripe |
| US20080067563A1 (en) * | 2006-09-15 | 2008-03-20 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US20090231042A1 (en) * | 2007-09-05 | 2009-09-17 | Pengcheng Jia | Broadband Power Amplifier with A High Power Feedback Structure |
-
2012
- 2012-01-09 CN CN2012100037628A patent/CN103199804A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010005025A1 (en) * | 1998-01-26 | 2001-06-28 | Lg Electronics Ins. | Heterojunction bipolar transistor and its fabrication method |
| CN1495901A (en) * | 2001-11-01 | 2004-05-12 | M/A-Com | Power amplifier with base stripe and collector stripe |
| US20080067563A1 (en) * | 2006-09-15 | 2008-03-20 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US20090231042A1 (en) * | 2007-09-05 | 2009-09-17 | Pengcheng Jia | Broadband Power Amplifier with A High Power Feedback Structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111525263A (en) * | 2020-04-29 | 2020-08-11 | 广州程星通信科技有限公司 | Full-airspace multilayer three-dimensional phased array antenna |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10110170B2 (en) | Semiconductor package having an isolation wall to reduce electromagnetic coupling | |
| US11811366B2 (en) | Symmetrical Doherty power amplifier having improved efficiency | |
| US11716058B2 (en) | No-load-modulation, high-efficiency power amplifier | |
| US9641163B2 (en) | Bandwidth limiting methods for GaN power transistors | |
| US9515011B2 (en) | Over-mold plastic packaged wide band-gap power transistors and MMICS | |
| Sakuno et al. | A 3.5 W HBT MMIC power amplifier module for mobile communications | |
| JP6480060B2 (en) | Overmold packaging for wide bandgap semiconductor devices | |
| US11281245B1 (en) | Bias circuits and improved linearity bias schemes for RF power devices | |
| Andersson et al. | A packaged 86 W GaN transmitter with SiC varactor-based dynamic load modulation | |
| CN103199804A (en) | Wideband amplifier with high-power feedback structure | |
| KR102549667B1 (en) | Semiconductor package with integrated harmonic termination feature | |
| US20090231042A1 (en) | Broadband Power Amplifier with A High Power Feedback Structure | |
| US8766714B2 (en) | Amplifier component comprising a compensation element | |
| US7928815B2 (en) | Amplifier | |
| CN115765645A (en) | Radio frequency amplifier | |
| Greene et al. | Design of a broadband L-band 160 W GaN power amplifier using SMT packaged transistors | |
| US11929317B2 (en) | Capacitor networks for harmonic control in power devices | |
| KR200383629Y1 (en) | High power Gallum Nitride HEMT Transistor structure having a functioning by Self Bias Voltage used an Aluminum Nitride | |
| KR20180016052A (en) | THE INTERNAL IMPEDANCE MATCHING AND TUNNING METHOD OF GaN SEMICONDUCTOR PACKAGE FOR HIGH POWER AMPLIFIER COMPRISING IMPEDANCE MATCHING CURCUIT | |
| Bajgot et al. | Surface mount, 50 watt peak GaN power amplifier for low-cost S-band radar | |
| Jackson et al. | A scalable MMIC-compatible power HBT | |
| TW202117972A (en) | Power flat no-lead package | |
| Aboush et al. | Novel cost-efficient packaging technology for high-power LDMOS devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130710 |