CN103187264A - Method for etching silicon oxide layer in plasma etching room - Google Patents
Method for etching silicon oxide layer in plasma etching room Download PDFInfo
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- CN103187264A CN103187264A CN2011104499655A CN201110449965A CN103187264A CN 103187264 A CN103187264 A CN 103187264A CN 2011104499655 A CN2011104499655 A CN 2011104499655A CN 201110449965 A CN201110449965 A CN 201110449965A CN 103187264 A CN103187264 A CN 103187264A
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- plasma etching
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- oxidation silicon
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Abstract
The invention discloses a method for etching a silicon oxide layer in a plasma etching room. A lower electrode of the plasma etching room is connected with a radio-frequency power supply, the frequency of the radio-frequency power supply is smaller than 27megahertz, the power of the radio-frequency power supply is smaller than 1000 watts, the proportional range of fluorocarbon and oxide content in a reaction gas in the plasma etching room is controlled to be 1:3-10:1 so that concentration of plasma in the plasma etching room can be relatively low, the flowing speed of the reaction gas is controlled, accordingly the etching rate of the silicon oxide layer protected by photoresist is relatively slow, and control for the etching process is convenient. Meanwhile, the low-frequency radio-frequency power supply is adopted, the fact that the plasma is uniformly distributed can be guaranteed, and accordingly uniformity of a workpiece to be etched is good.
Description
Technical field
The present invention relates to the manufacturing field of semiconductor device, relate in particular to a kind of low etching rate plasma etching apparatus
Background technology
In plasma etch process; some technologies; for example to the etching of the silica (Resist protective oxide is called for short RPO) of photoresist protection; because the silicon oxide thickness of photoresist protection is too small; progress for the ease of the control etching guarantees good etching homogeneity, needs very low etch rate; usually to be lower than 1000 dusts/minute, to guarantee the stability of etching technics.Indoor at traditional plasma etching, reach very low etch rate, the plasma density of namely controlling in the etching chamber is very low, mainly realizes by two kinds of approach: a kind of is the etching gas of the low flow velocity of input, another kind is to control lower radio-frequency power, and perhaps both cooperations are carried out.The gas input of low flow velocity is difficult to control, radio-frequency power greater than 27 megahertzes commonly used is adjusted to the repeatability that required radio frequency also is difficult to guarantee operation, therefore, the uniformity of low etch rate and etching workpiece is the technical problem that needs to be resolved hurrily in the etching RPO technology.
Summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of method at the indoor etching oxidation silicon layer of plasma etching, described silicon oxide layer is positioned at the photoresist mask layer below, and thickness is less than 100 nanometers; Described plasma etching chamber comprises a top electrode and a bottom electrode, and an electrostatic chuck is set on the described bottom electrode, places pending wafer on the described electrostatic chuck; Described bottom electrode connects a radio-frequency power supply, and the frequency of described radio-frequency power supply is less than 27 megahertzes, and power is less than 1000 watts; The proportion of fluorocarbons and oxygen content is 1 in the indoor reacting gas of described plasma etching: 3-10: 1.
The indoor argon gas that also comprises of described plasma etching, the flow velocity that described argon gas enters the plasma etching chamber is 200-2000sccm.
Described fluorocarbon comprises CF
4, described CF
4With oxide content scope ratio be 1: 2-10: 1.
Described fluorocarbon comprises C
4F
8, described C
4F
8With oxygen content scope ratio be 1: 3-2: 1.
Concrete, the radio-frequency power frequency that described bottom electrode connects is 13.56 megahertzes.
The indoor air pressure of described plasma etching is less than 100 millitorrs.
The indoor etch rate of described plasma etching be lower than 1500 dusts/minute.
The indoor etch rate of described plasma etching be 500 dusts/minute.
The indoor etch rate of described plasma etching be 200 dusts/minute.
Described bottom electrode temperature control is at 10 °-50 °, and described upper electrode temperature control is at 80 °-150 °.
The method of described etching oxidation silicon layer further comprises the step of removing photoresist mask layer behind the intact silica of etching, and required reacting gas is mainly oxygen-containing gas.
By adopting the method at the indoor etching oxidation silicon of plasma etching of the present invention, advantage is: lower radio-frequency power makes that the indoor plasma density of plasma etching is lower, cooperate again the reacting gas flow velocity is controlled, make that the etch rate of the silicon oxide layer that photoresist is protected is slower, be convenient to the control to etching process; Adopt low-frequency radio-frequency power supply simultaneously, can also guarantee the plasma distribution uniform, thereby make that the workpiece uniformity to be etched is better.Plasma etching indoor oxygen content of the present invention is higher, is used for removing photoresist mask layer behind the intact silica of etching.
Description of drawings
By reading the detailed description of non-limiting example being done with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1 illustrates the plasma etching cell structure schematic diagram of etching oxidation silicon layer of the present invention;
Fig. 2 A illustrates the structural representation of the present invention's wafer to be etched before etching;
Fig. 2 B illustrates the structural representation of the present invention's wafer to be etched after etching.
Embodiment
Present embodiment has been described a kind of method at the indoor etching oxidation silicon layer of plasma etching in preferable mode, be illustrated in figure 1 as the plasma etching chamber 100 of etching oxidation silicon layer, comprise a top electrode 1 and a bottom electrode 2, one electrostatic chuck 4 is set on the bottom electrode 2, place pending wafer 3 on the electrostatic chuck 4, pending wafer 3 comprises the semiconductor device layer 13 of photoresist mask layer 11, silicon oxide layer 12 and silicon oxide layer below from top to bottom, comprises material layers such as polysilicon electrode in the semiconductor device.Low etching rate plasma etching of the present invention chamber is mainly used to the silicon oxide layer of etching photoresist layer protection.
Described plasma etching is indoor also to need to feed a certain amount of argon gas, and the flow velocity that described argon gas enters the plasma etching chamber is 200-2000sccm.The indoor air pressure of described plasma etching is less than 100 millitorrs.The indoor etch rate of described plasma etching be lower than 1500 dusts/minute.The indoor etch rate of the described plasma etching of present embodiment be 500 dusts/minute.Experimental results show that the indoor etch rate of plasma etching can reach 200 dusts/minute, thereby realize effective control to low etching rate technology.
Though the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (10)
1. method at the indoor etching oxidation silicon layer of plasma etching is characterized in that: described silicon oxide layer is positioned at the photoresist mask layer below, and thickness is less than 100 nanometers;
Described plasma etching chamber comprises a top electrode and a bottom electrode, and an electrostatic chuck is set on the described bottom electrode, places pending wafer on the described electrostatic chuck;
Described bottom electrode connects a radio-frequency power supply, and the frequency of described radio-frequency power supply is less than 27 megahertzes, and power is less than 1000 watts;
The proportion of fluorocarbons and oxide content is 1 in the indoor reacting gas of described plasma etching: 3-10: 1.
2. the method at the indoor etching oxidation silicon layer of plasma etching according to claim 1 is characterized in that: the radio-frequency power frequency that described bottom electrode connects is 13.56 megahertzes.
3. the method at the indoor etching oxidation silicon layer of plasma etching according to claim 1, it is characterized in that: the indoor argon gas that also comprises of described plasma etching, the flow velocity that described argon gas enters the plasma etching chamber is 200-2000sccm.
4. the method at the indoor etching oxidation silicon layer of plasma etching according to claim 1 is characterized in that: the indoor air pressure of described plasma etching is less than 100 millitorrs.
5. the method at the indoor etching oxidation silicon layer of plasma etching according to claim 1, it is characterized in that: described fluorocarbon comprises CF
4, described CF
4With oxide content scope ratio be 1: 2-10: 1.
6. the method at the indoor etching oxidation silicon layer of plasma etching according to claim 1, it is characterized in that: described fluorocarbon comprises C
4F
8, described C
4F
8With oxide content scope ratio be 1: 3-2: 1.
7. the method at the indoor etching oxidation silicon layer of plasma etching according to claim 1 is characterized in that: the indoor etch rate of described plasma etching be lower than 1500 dusts/minute.
8. the method at the indoor etching oxidation silicon layer of plasma etching according to claim 1 is characterized in that: the indoor etch rate of described plasma etching be 500 dusts/minute.
9. the method at the indoor etching oxidation silicon layer of plasma etching according to claim 1 is characterized in that: the indoor etch rate of described plasma etching be 200 dusts/minute.
10. the method at the indoor etching oxidation silicon layer of plasma etching according to claim 1, it is characterized in that: the method for described etching oxidation silicon layer further comprises the step of removing photoresist mask layer behind the intact silicon oxide layer of etching, and required reacting gas is mainly oxygen-containing gas.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104499655A CN103187264A (en) | 2011-12-28 | 2011-12-28 | Method for etching silicon oxide layer in plasma etching room |
| TW101143721A TW201334069A (en) | 2011-12-28 | 2012-11-22 | Method of etching silicon oxide layer inside plasma etching room |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104499655A CN103187264A (en) | 2011-12-28 | 2011-12-28 | Method for etching silicon oxide layer in plasma etching room |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103187264A true CN103187264A (en) | 2013-07-03 |
Family
ID=48678373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104499655A Pending CN103187264A (en) | 2011-12-28 | 2011-12-28 | Method for etching silicon oxide layer in plasma etching room |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103187264A (en) |
| TW (1) | TW201334069A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5595627A (en) * | 1995-02-07 | 1997-01-21 | Tokyo Electron Limited | Plasma etching method |
| US20070287297A1 (en) * | 2006-03-23 | 2007-12-13 | Tokyo Electron Limited | Plasma etching method, plasma processing apparatus, control program and computer readable storage medium |
| CN102089867A (en) * | 2008-07-11 | 2011-06-08 | 东京毅力科创株式会社 | Plasma processing apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8349678B2 (en) * | 2010-02-08 | 2013-01-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drain |
-
2011
- 2011-12-28 CN CN2011104499655A patent/CN103187264A/en active Pending
-
2012
- 2012-11-22 TW TW101143721A patent/TW201334069A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5595627A (en) * | 1995-02-07 | 1997-01-21 | Tokyo Electron Limited | Plasma etching method |
| US20070287297A1 (en) * | 2006-03-23 | 2007-12-13 | Tokyo Electron Limited | Plasma etching method, plasma processing apparatus, control program and computer readable storage medium |
| CN102089867A (en) * | 2008-07-11 | 2011-06-08 | 东京毅力科创株式会社 | Plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI498969B (en) | 2015-09-01 |
| TW201334069A (en) | 2013-08-16 |
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Application publication date: 20130703 |
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