CN103185650B - A kind of stress mornitoring method of packaging - Google Patents
A kind of stress mornitoring method of packaging Download PDFInfo
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- CN103185650B CN103185650B CN201110458129.3A CN201110458129A CN103185650B CN 103185650 B CN103185650 B CN 103185650B CN 201110458129 A CN201110458129 A CN 201110458129A CN 103185650 B CN103185650 B CN 103185650B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 46
- 238000001514 detection method Methods 0.000 claims abstract description 21
- 230000002093 peripheral Effects 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 238000005538 encapsulation Methods 0.000 abstract description 5
- 238000009659 non-destructive testing Methods 0.000 abstract description 4
- 239000011148 porous material Substances 0.000 abstract description 4
- 230000004048 modification Effects 0.000 description 6
- 238000006011 modification reaction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 2
- 230000000875 corresponding Effects 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical Effects 0.000 description 2
- 241000724291 Tobacco streak virus Species 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Abstract
The present invention provides a kind of method detecting electronic encapsulation device internal stress, the pore space structure of regular shape is prepared in encapsulating again wiring layer (RDL) technique, then by the deformation of X-ray (X Ray) detection packaging internal rule shaped hole structure, and then analysis obtains internal stress.The method belongs to Non-Destructive Testing, compatible with packaging technology, low cost, and speed is fast, harmless to packaging function, and accuracy of detection is high, can be generally applicable.
Description
Technical field
The present invention relates to the stress mornitoring of semiconductor packages, particularly relate to the stress mornitoring method in a kind of packaging wire structures again.
Background technology
Fast development along with electronic technology, microelectronic component is increasingly to miniaturization, highly integrated, multifunctional direction development, corresponding to this, Electronic Encapsulating Technology is the most constantly reformed, on the one hand from technique, develop small size, highdensity packing forms, on the other hand also have to meet the requirement of device reliability.Wherein, under load effect outside, the stress in packaging is the important evidence of the reliability evaluation to packaging.
Wiring is requisite technique in highdensity encapsulation technology again, and its application is wide.Such as wafer level chip scale package (Wafer Level Chip Scale Packaging, be called for short WLCSP) in micro convex point array rearrangement cloth and to the dispersion rearrangement etc. of fine pitch junction point in silicon through hole (Through-Silicon-Via, be called for short TSV) keyset.And wiring layer (Redistribution layer again, it is called for short RDL) it is the key structure being electrically connected with in packaging, if the stress of wiring layer is excessive again in packaging, it is possible to cause again wiring layer lead-in wire to destroy, cause its fracture cannot realize corresponding function.So, the important step of stress mornitoring during the detection of stress is encapsulation in RDL.
It is presently used for obtaining the method for stress in encapsulating structure and mainly has finite element method (fem) analysis and experiment detection two big classes.But, finite element method (fem) analysis to rational model and accurately material parameter have the highest requirement, it is not generally suitable for because of complicated and loaded down with trivial details.Experiment detection includes multiple method, such as: embedding stress/strain sensor method, obtain the optical method for measuring method etc. such as the method for stress, full method for releasing, Blind Hole Method, the indentation method of Stress superposition, electronic speckle with X-ray (X-Ray) detection material lattice change.Wherein, the optical method for measuring such as full method for releasing, Blind Hole Method, the indentation method of Stress superposition, electronic speckle is owned by France in destroying or the detection method of local failure, it is impossible to surveys device inside, thus is all not suitable for the stress being directly used in detection within packaging.And embedding stress/strain sensor method is relatively costly, it is difficult to and encapsulation procedure is compatible, and the detection cycle is longer, thus, the most generally it is not suitable for.
But, the method for X-Ray detection material lattice change does not damage sample during detection, belongs to Non-Destructive Testing, can be widely used in the stress mornitoring of RDL by people.But, traditional X-Ray detection method is big, for the RDL of high-density packages device with multiple material, it is difficult to guarantee accuracy of detection to material behavior and sample surfaces State-dependence.
Therefore, it is necessary to provide a kind of new stress mornitoring method improve or solve above-mentioned problem.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method not damaging encapsulating structure and the higher detection packaging stress of precision.
The present invention solves above-mentioned technical problem by such technical scheme:
A kind of stress mornitoring method of packaging, its method comprises the following steps:
Step S001: the wiring layer again of packaging is provided, revises again the template of wiring layer to realize pore space structure；
Step S002: after amendment template, can prepare some holes, the size and dimension of record hole simultaneously when preparing again wiring layer；
Step S003: described packaging applies thermally or mechanically external applied load, inner void structure will be deformed；
Step S004: utilize the deformation size of X-ray detection described hole, and obtain stress intensity suffered in the wiring layer again of packaging by analyzing the deflection of hole.
As a modification of the present invention, the template of wiring layer is prepared in amendment again, prepares some holes at wiring layer more simultaneously.
As a modification of the present invention, described wiring layer again is provided with conduction region and nonconductive regions, and described hole is arranged in conduction region.
As a modification of the present invention, described wiring layer again is provided with conduction region and nonconductive regions, and described hole is arranged in nonconductive regions.
As a modification of the present invention, described hole is arranged at edge or the peripheral region of the wiring layer again of packaging.
As a modification of the present invention, the geometric figure of the rules such as described hole is rounded or square.
As a modification of the present invention, described hole runs through the upper and lower surface of wiring layer again.
The invention have the advantages that the present invention passes through preparation rule hole on wiring layer again, the change of recycling X-Ray detection hole, and then draw stress intensity suffered around the hole of the wiring layer again of packaging.By this high-precision Non-Destructive Testing, it is possible on the basis of not damaging sample, be beneficial to improve device design, or practical devices is gone through the internal stress after different loads change be monitored.Additionally, the method also has, low cost compatible with packaging technology, detect fireballing advantage.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the stress mornitoring method of packaging of the present invention；
The floor map of the RDL structure that first embodiment of the stress mornitoring method that Fig. 2 is packaging of the present invention provides；
A-A ' the schematic cross-section of the RDL structure that first embodiment of the stress mornitoring method that Fig. 3 is packaging of the present invention provides；
The floor map of the RDL structure that second embodiment of the stress mornitoring method that Fig. 4 is packaging of the present invention provides.
Detailed description of the invention
Describe the detailed description of the invention of the present invention below in conjunction with the accompanying drawings in detail.
The detection method proposed the present invention below in conjunction with the drawings and specific embodiments is described in further detail.
The present invention provides the RDL structure of a kind of band rule cavity shape, by the deformation of X-Ray detection pore space structure, and then obtains stress intensity.Thus can be appreciated that RDL and stress state about, contribute to improve device design, or practical devices is gone through the internal stress after different loads change be monitored.
As it is shown in figure 1, a kind of stress mornitoring method of packaging, it comprises the following steps:
Step S001: wiring layer 10 again of packaging are provided, revise again the template of wiring layer to realize pore space structure 11；
Step S002: after amendment template, can prepare some holes 12, the size and dimension 13 of record hole simultaneously when preparing again wiring layer；
Step S003: described packaging is applied thermally or mechanically external applied load F, then the inner void structure of wiring layer will be deformed；
Step S004: utilize the deformation size of X-ray detection described hole, and by analyzing the deflection 14 of hole, and then obtain stress intensity suffered in the wiring layer again of packaging.
The RDL structure of wiring layer again 100 that first embodiment of the stress mornitoring method that Fig. 2 and Fig. 3 is packaging of the present invention provides, wiring layer 100 is provided with conduction region 101 and nonconductive regions 102 again, and conduction region 101 is provided with micro convex point 103 and the microbonding point 104 electrically connected with micro convex point 103.Hole 105 is made to be formed on conduction region 101, i.e. in the conductor area of wiring layer 100 again by amendment template.So, the stress situation at conductor section hole 105 can be detected.Preferably, hole 105 runs through the upper and lower surface of wiring layer 100 again, and the geometric figure that hole 105 is the rule such as circular or square.In order to not affect the function of RDL, Circularhole diameter is less than the half of RDL layer width.
Fig. 4 show the RDL structure 100 ' that second embodiment of the stress mornitoring method of packaging of the present invention provides, and unlike first embodiment, by revising the template of RDL, makes hole 105 ' be formed in nonconductive regions 102.In order to compatible with Wiring technique, layer of metal layer 106 need to be set in the nonconductive regions 102 of RDL, and then prepare hole 105 ' on metal level 106.This hole 105 ' can be arranged at the peripheral region of device, it is also possible to is arranged on the edge of device.This design both can avoid the impact on packaging function, can detect again the stress intensity of packaging edge or corner.
In sum, the present invention announces a kind of method detecting electronic encapsulation device internal stress, the empty structure of regular shape is prepared in wiring layer again (RDL) technique of packaging, then by the deformation of X-ray (X-Ray) detection packaging internal rule shape, and then analysis obtains internal stress.The method belongs to Non-Destructive Testing, compatible with packaging technology, low cost, and speed is fast, on packaging function without impact.
The foregoing is only the better embodiment of the present invention; protection scope of the present invention is not limited with above-mentioned embodiment; in every case those of ordinary skill in the art modify or change according to the equivalence that disclosed content is made, and all should include in the protection domain described in claims.
Claims (6)
1. the stress mornitoring method of a packaging, it is characterised in that the method comprises the following steps:
Step S001: provide the wiring layer again of packaging, revises the template of wiring layer to realize hole knot again
Structure；
Step S002: after amendment template, prepare some holes when preparing again wiring layer simultaneously, record hole
Size and dimension；
Step S003: described packaging applies thermally or mechanically external applied load, generation is become by inner void structure
Shape；
Step S004: utilize the deformation size of X-ray detection described hole, and by analyzing the deformation of hole
Measure and obtain stress intensity suffered in the wiring layer again of packaging.
The stress mornitoring method of a kind of packaging the most according to claim 1, it is characterised in that: institute
Stating wiring layer again and be provided with conduction region and nonconductive regions, described hole is arranged in conduction region.
The stress mornitoring method of a kind of packaging the most according to claim 1, it is characterised in that: institute
Stating wiring layer again and be provided with conduction region and nonconductive regions, described hole is arranged in nonconductive regions.
The stress mornitoring method of a kind of packaging the most according to claim 3, it is characterised in that: institute
State hole and be arranged at the edge of wiring layer again or the peripheral region of packaging.
5. according to the stress mornitoring method of a kind of packaging described in Claims 1-4 any one, its
It is characterised by: the geometric figure of the rules such as described hole is rounded or square.
The stress mornitoring method of a kind of packaging the most according to claim 5, it is characterised in that: institute
State hole and run through again the upper and lower surface of wiring layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110458129.3A CN103185650B (en) | 2011-12-31 | A kind of stress mornitoring method of packaging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110458129.3A CN103185650B (en) | 2011-12-31 | A kind of stress mornitoring method of packaging |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103185650A CN103185650A (en) | 2013-07-03 |
| CN103185650B true CN103185650B (en) | 2016-11-30 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1489202A (en) * | 2002-09-05 | 2004-04-14 | ��ʽ���綫֥ | Electronic device module |
| CN101093199A (en) * | 2006-06-23 | 2007-12-26 | 东南大学 | Method for non-destructive testing grouting cavernes in prestressed concrete structure |
| CN101320716A (en) * | 2007-06-08 | 2008-12-10 | 日本电气株式会社 | Semiconductor device and method for manufacturing same |
| CN101759139A (en) * | 2009-12-10 | 2010-06-30 | 江苏大学 | Surface modification processing method and device of MEMS microcomponent |
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1489202A (en) * | 2002-09-05 | 2004-04-14 | ��ʽ���綫֥ | Electronic device module |
| CN101093199A (en) * | 2006-06-23 | 2007-12-26 | 东南大学 | Method for non-destructive testing grouting cavernes in prestressed concrete structure |
| CN101320716A (en) * | 2007-06-08 | 2008-12-10 | 日本电气株式会社 | Semiconductor device and method for manufacturing same |
| CN101759139A (en) * | 2009-12-10 | 2010-06-30 | 江苏大学 | Surface modification processing method and device of MEMS microcomponent |
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