CN103177938A - Silicon compound epitaxial growth thickness detection method and silicon compound production mehtod - Google Patents
Silicon compound epitaxial growth thickness detection method and silicon compound production mehtod Download PDFInfo
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- CN103177938A CN103177938A CN2011104314502A CN201110431450A CN103177938A CN 103177938 A CN103177938 A CN 103177938A CN 2011104314502 A CN2011104314502 A CN 2011104314502A CN 201110431450 A CN201110431450 A CN 201110431450A CN 103177938 A CN103177938 A CN 103177938A
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Abstract
A silicon compound epitaxial growth thickness detection method includes that an epitaxial growth reaction cavity is cooled to be at normal temperature, and detection is performed in the reaction cavity, or substrates of a growing silicon compound epitaxial layer are transplanted from the epitaxial growth reaction cavity to another normal temperature cavity under protection of protection gases for detection, and the detection includes that a Fourier transformation infrared spectrograph is used for detecting components and contents of all elements in silicon compounds and an ellipsometry method is used for detecting the thickness of growing silicon compounds; and growth is stopped if the thickness meets requirements, and if the thickness does not meet requirements, when detection is performed in the epitaxial growth reaction cavity, temperature is raised to lead the silicon compounds to continue to grow, and when detection is performed in the another normal temperature cavity, the substrates are re-transferred into the reaction cavity under protection of protection gases to lead the silicon compounds to continue to grow. The silicon compound epitaxial growth thickness detection method can achieve online detection.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of detection method of silicon compound epitaxial growth thickness and the manufacture method of silicon compound.
Background technology
The MOS device is one of primary element in integrated circuit.In recent years, occurred the employing silicon compound in semicon industry, for example silicon-germanium improves the MOS device performance as source, drain electrode.Known, when uniaxial compressive directly put on transistorized channel region from silicon-germanium source region and drain region, the transistorized performance of PMOS can be improved.When uniaxial tensile strain was added on channel region, the performance of nmos pass transistor can be improved.
Material is that source region and the drain region of silicon compound can form by etching, yet, etching can cause defective, when carrying out Implantation in source region and drain region, for avoiding the ion diffusion in shallow junction or dark knot too fast, need to control the temperature in source region and drain region, thereby the source region that etching causes, drain region defective also can't be repaired through high temperature.For avoiding defects, general by epitaxy grown silicon compound on substrate at present.
Whether silicon compound needs to detect thickness and satisfies the demands after growth, checkout gear commonly used is KLA equipment, this equipment need to be taken out this equipment of putting into substrate in the chamber of growth, if it is qualified to detect the thickness of growth, this substrate enters subsequent processing, if undesirable, this substrate is designated as the calcellation substrate.This detection method can cause a large amount of calcellation substrates.
Based on this, the present invention proposes a kind of detection method of new silicon compound epitaxial growth thickness, can realize online detection, if the epitaxially grown thickness of silicon compound does not meet the demands, this substrate can not cancel, and silicon compound can continued growth.
Summary of the invention
The purpose that the present invention realizes is to provide a kind of detection method of new silicon compound epitaxial growth thickness, can realize online detection.
For achieving the above object, the invention provides a kind of detection method of silicon compound epitaxial growth thickness, comprising:
Normal temperature is down in the epitaxial growth reaction chamber, detect in this reaction chamber, or under protective gas protection, the substrate of grown silicon compound epitaxial loayer is moved in other desoak chamber from the epitaxial growth reaction chamber and detect, described detection comprises: the composition in the described silicon compound of use Fu Shi conversion infrared spectrometer detection and the content of each element, use ellipsometry to detect the thickness of the silicon compound of growing;
Wherein, if described thickness satisfies the demands, stop growing; If described thickness does not satisfy the demands; when detecting in the epitaxial growth reaction chamber, heat up and continue to make the silicon compound growth, when detecting in other desoak chamber; again move in described reaction chamber under the protection of described protective gas, continue to make the silicon compound growth.
Alternatively, when detecting in described epitaxial growth reaction chamber, reflector and the receiver of described Fu Shi conversion infrared spectrometer are arranged in described reaction chamber, when detecting in described other desoak chamber, reflector and the receiver of described Fu Shi conversion infrared spectrometer are arranged in described other desoak chamber.
Alternatively, described ellipsometry is the broadband spectral ellipsometry.
Alternatively, the polarizer that described broadband spectral ellipsometry is used is Rochon prism, and the transmission peak wavelength minimum of described Rochon prism is 200nm.
Alternatively, the analyzer that described broadband spectral ellipsometry is used is Rochon prism, and described Rochon prism material is MgF
2
Alternatively, described protective gas is nitrogen or hydrogen.
Alternatively, described intensification continues to make in the silicon compound growth step, and temperature is raised in 500 ℃ of-800 ℃ of scopes, and pressure range is 1Torr-100Torr.
Alternatively, described silicon compound is at least a in SiGe, SiC, SiGeB, SiGeC, SiP.
Alternatively, described silicon compound is SiGe, describedly continues to make in the silicon compound growth step, passes into SiH
4With SiH
2Cl
2In at least a, and H
2, GeH
4, HCl.
Alternatively, also pass into B
2H
6, CH
4, CH
3Cl, CH
2Cl
2In at least a.
Alternatively, SiH
4, GeH
4, SiH
2Cl
2, CH
4, CH
3Cl, CH
2Cl
2, B
2H
6The range of flow that reaches HCl is 1sccm-1000sccm, and the range of flow of H2 is 0.1slm-50slm.
In addition, the present invention also provides a kind of manufacture method of silicon compound, comprising:
Press parameter preset epitaxial growth silicon compound;
Utilize the detection method of foregoing description to the silicon compound detection of growth.
compared with prior art, technique scheme has the following advantages: detect for avoiding the substrate of grown silicon compound epitaxial loayer is taken out from the epitaxial growth reaction chamber, the present invention adopts 1) normal temperature is down in the epitaxial growth reaction chamber, detect in this reaction chamber, or 2) under protective gas protection, the substrate of grown silicon compound epitaxial loayer is moved in other desoak chamber from the epitaxial growth reaction chamber and detect, use Fu Shi conversion infrared spectrometer to detect silicon and the composition of other element and content separately in the silicon compound of this growth in testing process, use ellipsometry to detect the thickness of the silicon compound of growth,
If described thickness satisfies the demands, stop growing; If described thickness does not satisfy the demands, for employing scheme 1) situation, when namely detecting in the epitaxial growth reaction chamber, control and heat up in former chamber and pass into reacting gas, continue to make the silicon compound growth, for employing scheme 2) situation, namely when detecting in described other desoak chamber, again move under the protection of described protective gas in described reaction chamber, because silicon compound does not contact outside air, thereby can continued growth under corresponding condition;
use therein Fu Shi conversion infrared spectrometer, need to get rid of extraneous thermal source signal, thereby obtain the signal of each molecule in silicon compound or atomic vibration or rotation, to determine silicon and the composition of other element and content separately wherein, when detecting in former reaction chamber in such scheme, need make this reaction chamber temperature be down to room temperature, to get rid of the thermal source signal that causes due to himself high temperature, in addition, can also move on to by the substrate with the epitaxial growth silicon compound in the chamber of normal temperature and detect, but this layer thickness might not satisfy the demands, need regrowth, thereby need adopt protective gas in mobile and testing process.
Description of drawings
Fig. 1 is the flow chart of the detection method of the silicon compound epitaxial growth thickness that provides of embodiment one;
Fig. 2 is the flow chart of the detection method of the silicon compound epitaxial growth thickness that provides of embodiment two.
Embodiment
Just as stated in the Background Art, the thickness to epitaxially grown silicon compound in prior art is not generally online detection, detects but it is moved on in other equipment, if thickness is undesirable, this wafer can't continued growth.the present invention proposes to use Fu Shi conversion infrared spectrometer to detect each element and the content information of silicon compound, this equipment need to be got rid of extraneous thermal source signal, thereby obtain the signal that molecule in silicon compound or atomic vibration or rotation are sent, when detecting in former reaction chamber in such scheme, need make this reaction chamber temperature be down to room temperature, the thermal source signal that causes to get rid of it, in addition, can also move on to by the substrate with the epitaxial growth silicon compound in the chamber of normal temperature and detect, but this layer thickness might not satisfy the demands, need regrowth, thereby need adopt protective gas in mobile and testing process.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Because the present invention focuses on interpretation principle, therefore, drawing not in scale.
Embodiment one
Fig. 1 is the flow chart of the detection method of the silicon compound epitaxial growth thickness that provides of the invention process one example.In conjunction with Fig. 1, below introduce in detail the operating procedure of the method.
At first execution in step S11 is down to normal temperature with the epitaxial growth reaction chamber, detects in this reaction chamber.
Detection in this step comprises: the composition in (1) silicon compound and the content of each element, the thickness of the silicon compound of (2) growth.
This step in the process of implementation, silicon compound can comprise at least a in SiGe, SiC, SiGeB, SiGeC, SiP, and the silicon in every kind of compound and the content of other element have a significant impact the character of silicon compound, for example SiGe is as the source, when draining with raising MOS device performance, uniaxial compressive, the elongation strain different in kind of the corresponding compound of the different content of Si, Ge, and then make the improvement degree of PMOS transistor, nmos pass transistor performance also can be different.
Thereby, need to detect each composition of the epitaxial loayer of growing and the content of each element in the epitaxial process of compound, for accurate detection, the present embodiment one adopts Fu Shi conversion infrared spectrometer.Reflector and the receiver of this spectrometer are arranged in reaction chamber.This spectrometer from infrared ray, passes into reacting gas and be generally in the epitaxial process of compound due to signal in use, heating makes its reaction, also can produce infrared ray, this infrared ray can disturb the infrared ray that carries containing element and content information, causes spectrometer measurement inaccurate.For the problems referred to above, the present invention's proposition first drops to normal temperature with the temperature of reative cell, gathers afterwards infrared signal again, has avoided the signal that the high temperature of reative cell own causes to disturb.Normal temperature herein is room temperature, is for example 25 ℃.
Except detection elements information, more importantly, also to detect thickness information, in the present embodiment one, this thickness information adopts ellipsometry to detect, the polarisation of light angle that concrete principle is reflected after being a branch of polarizing light irradiation to the compound of different-thickness can change, and polarization angle intensity of variation corresponding to different-thickness is different.In addition, the polarisation of light situation of different frequency is different, and the present embodiment one preferably adopts broadband spectral ellipsometry (Broadband Spectroscopic Ellipsometry, BBSE), makes the polarised light of collection cover more broadband.
In specific implementation process, this broadband spectral ellipsometry uses the polarizer to produce polarised light, this polarizer is Rochon prism (Rochon Quartz), the transmission peak wavelength minimum of this Rochon prism is 200nm, in other words, the polarization light wavelength that shines on the silicon composite bed is an above wide range scope of 200nm.
Correspondingly, adopt analyzer to detect by the light of this silicon composite bed reflection, this analyzer is also Rochon prism, collects for the spectrum of realizing wide frequency range, and the material of the Rochon prism of this analyzer adopts MgF
2, this material is very high to the light transmittance of the light between wavelength 160nm-8000nm, reaches more than 95%.
Then, if the thickness of the silicon compound of measuring satisfies the demands, execution in step S12 stops growing.The substrate of epitaxial growth compound enters subsequent processing.
If thickness does not satisfy the demands, execution in step S13 recovers compound growth conditions before in reative cell, continues to make the silicon compound growth.What for example grow in this step is the SiGe compound, and growth conditions is: pass into H
2, GeH
4, three kinds of gases of HCl, in addition, also pass into SiH
4With SiH
2Cl
2In at least a, in the present embodiment, two kinds of gases all pass into, GeH
4, HCl, SiH
2Cl
2And GeH
4Range of flow is 1sccm-1000sccm, H
2Range of flow be 0.1slm-50slm (slm is 1000 times of sccm), and temperature is raised in 500 ℃ of-800 ℃ of scopes, pressure range controls to 1Torr-100Torr.Except passing into above-mentioned several gas, can also pass into B
2H
6, CH
4, CH
3Cl, CH
2Cl
2In at least a, and with rear several gas flow scope controls within 1sccm-1000sccm.
Need to prove, the condition during execution in step S13: thickness does not satisfy the demands, not satisfying the demands as less than target thickness wherein.Adopt the method for the present embodiment one, because silicon compound thickness can continued growth less than target thickness, and outgrowth may need etching, and this etching can cause defective and cause wastage of material, thereby detects during preferred thickness miss the mark thickness in growth course.
In addition, the present embodiment one also provides a kind of manufacture method of silicon compound, comprising:
Press parameter preset epitaxial growth silicon compound;
Utilize the detection method of foregoing description to the silicon compound detection of growth.
In specific implementation process, this parameter preset is not more than target thickness.
Embodiment two
Fig. 2 is the flow chart of the detection method of the silicon compound epitaxial growth thickness that provides of this enforcement two examples.In conjunction with Fig. 2, below introduce the operating procedure of the method.
At first execution in step S21 moves into the substrate of grown silicon compound epitaxial loayer in other desoak chamber from the epitaxial growth reaction chamber under the protective gas protection and detects.
Also adopt Fu Shi conversion infrared spectrometer to detect to each composition of epitaxial loayer of growth and the content of each element in the present embodiment two.Described as embodiment one, this spectrometer in use, due to signal from infrared ray, and generally need in the epitaxial process of compound to heat, also can produce infrared ray, this infrared ray can disturb the infrared ray that carries containing element and content information, causes spectrometer measurement inaccurate.The present embodiment two adopts the substrate with grown silicon compound epitaxial loayer to carry out the thickness detection in the other desoak chamber of epitaxial growth reaction chamber immigration; because testing result might be undesirable; in order to make this undesirable substrate can this silicon compound of continued growth, adopt the protective gas protection in mobile and testing process.In specific implementation process, this protective gas is nitrogen or hydrogen, also can adopt other inert gas.Normal temperature also claims room temperature, is generally 25 ℃.
In the present embodiment two, reflector and the receiver of this Fu Shi conversion infrared spectrometer are arranged in this other desoak chamber.Detection method for silicon compound thickness is identical with embodiment one.
Then, if the thickness of the silicon compound of measuring satisfies the demands, execution in step S22 stops growing.The substrate of epitaxial growth compound enters subsequent processing.This step is identical with S12.
If thickness does not satisfy the demands, execution in step S23 moves in described reaction chamber under the protection of this protective gas again, continues to make the silicon compound growth.Due to mobile and testing process is very fast, thereby in above-mentioned two processes, this reaction chamber can stop controlling reaction condition, also can not stop controlling.For stopping controlling reaction condition, need to recover reaction condition, the reaction condition of this recovery is identical with embodiment one.
to sum up, the present invention proposes to use Fu Shi conversion infrared spectrometer to detect each element and the content information of silicon compound, this equipment need to be got rid of extraneous thermal source signal, thereby obtain the signal that molecule in silicon compound or atomic vibration or rotation are sent, when detecting in former reaction chamber in such scheme, need make this reaction chamber temperature be down to room temperature, the thermal source signal that causes to get rid of it, in addition, can also move on to by the substrate with the epitaxial growth silicon compound in the chamber of normal temperature and detect, but this layer thickness might not satisfy the demands, need regrowth, thereby need adopt protective gas in mobile and testing process.Method provided by the invention has realized online detection, for the substrate that does not meet thickness, can make the silicon composite bed continued growth of this substrate.
Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible change and modification to technical solution of the present invention; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (12)
1. the detection method of a silicon compound epitaxial growth thickness, is characterized in that, comprising:
Normal temperature is down in the epitaxial growth reaction chamber, detect in this reaction chamber, or under protective gas protection, the substrate of grown silicon compound epitaxial loayer is moved in other desoak chamber from the epitaxial growth reaction chamber and detect, described detection comprises: the composition in the described silicon compound of use Fu Shi conversion infrared spectrometer detection and the content of each element, use ellipsometry to detect the thickness of the silicon compound of growing;
Wherein, if described thickness satisfies the demands, stop growing; If described thickness does not satisfy the demands; when detecting in the epitaxial growth reaction chamber, heat up and continue to make the silicon compound growth, when detecting in other desoak chamber; again move in described reaction chamber under the protection of described protective gas, continue to make the silicon compound growth.
2. the detection method of silicon compound epitaxial growth thickness as claimed in claim 1, it is characterized in that, when detecting in described epitaxial growth reaction chamber, reflector and the receiver of described Fu Shi conversion infrared spectrometer are arranged in described reaction chamber, when detecting in described other desoak chamber, reflector and the receiver of described Fu Shi conversion infrared spectrometer are arranged in described other desoak chamber.
3. the detection method of silicon compound epitaxial growth thickness as claimed in claim 1, is characterized in that, described ellipsometry is the broadband spectral ellipsometry.
4. the detection method of silicon compound epitaxial growth thickness as claimed in claim 3, is characterized in that, the polarizer that described broadband spectral ellipsometry is used is Rochon prism, and the transmission peak wavelength minimum of described Rochon prism is 200nm.
5. the detection method of silicon compound epitaxial growth thickness as claimed in claim 3, is characterized in that, the analyzer that described broadband spectral ellipsometry is used is the Rochon prism of material as MgF2.
6. the detection method of silicon compound epitaxial growth thickness as claimed in claim 1, is characterized in that, described protective gas is nitrogen or hydrogen.
7. the detection method of silicon compound epitaxial growth thickness as claimed in claim 1, is characterized in that, described intensification continues to make in the silicon compound growth step, and temperature is raised in 500 ℃ of-800 ℃ of scopes, and pressure range is 1Torr-100Torr.
8. the detection method of silicon compound epitaxial growth thickness as claimed in claim 1, is characterized in that, described silicon compound is at least a in SiGe, SiC, SiGeB, SiGeC, SiP.
9. the detection method of silicon compound epitaxial growth thickness as claimed in claim 1, is characterized in that, described silicon compound is SiGe, describedly continues to make in the silicon compound growth step, passes into SiH
4With SiH
2Cl
2In at least a, and H
2, GeH
4, HCl.
10. the detection method of silicon compound epitaxial growth thickness as claimed in claim 9, is characterized in that, also passes into B
2H
6, CH
4, CH
3Cl, CH
2Cl
2In at least a.
11. the detection method of silicon compound epitaxial growth thickness as claimed in claim 10 is characterized in that SiH
4, GeH
4, SiH
2Cl
2, CH
4, CH
3Cl, CH
2Cl
2, B
2H
6The range of flow that reaches HCl is 1sccm-1000sccm, H
2Range of flow be 0.1slm-50slm.
12. the manufacture method of a silicon compound is characterized in that, comprising:
Press parameter preset epitaxial growth silicon compound;
Utilize the detection method of claim 1 to 11 any one to the silicon compound detection of growth.
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| CN201110431450.2A CN103177938B (en) | 2011-12-20 | The detection method of silicon compound epitaxial growth thickness and the manufacture method of silicon compound |
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|---|---|---|---|
| CN201110431450.2A CN103177938B (en) | 2011-12-20 | The detection method of silicon compound epitaxial growth thickness and the manufacture method of silicon compound |
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| Publication Number | Publication Date |
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| CN103177938A true CN103177938A (en) | 2013-06-26 |
| CN103177938B CN103177938B (en) | 2016-12-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606528A (en) * | 2013-10-23 | 2014-02-26 | 上海华力微电子有限公司 | Pre-tungsten-growth silicon detection device and method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5399229A (en) * | 1993-05-13 | 1995-03-21 | Texas Instruments Incorporated | System and method for monitoring and evaluating semiconductor wafer fabrication |
| US20080220546A1 (en) * | 2007-03-06 | 2008-09-11 | Kabushiki Kaisha Toshiba | Method for simulating deposition film shape and method for manufacturing electronic device |
| US20090305021A1 (en) * | 2008-06-10 | 2009-12-10 | Sumco Corporation | Film thickness measurement method, epitaxial wafer production process and epitaxial wafer |
| CN101826447A (en) * | 2009-03-04 | 2010-09-08 | 东京毅力科创株式会社 | Film deposition apparatus and film deposition method |
| US20100242631A1 (en) * | 2009-03-31 | 2010-09-30 | Petra Hetzer | Method and system for particles analysis in microstructure devices by isolating particles |
| US7951616B2 (en) * | 2006-03-28 | 2011-05-31 | Lam Research Corporation | Process for wafer temperature verification in etch tools |
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5399229A (en) * | 1993-05-13 | 1995-03-21 | Texas Instruments Incorporated | System and method for monitoring and evaluating semiconductor wafer fabrication |
| US7951616B2 (en) * | 2006-03-28 | 2011-05-31 | Lam Research Corporation | Process for wafer temperature verification in etch tools |
| US20080220546A1 (en) * | 2007-03-06 | 2008-09-11 | Kabushiki Kaisha Toshiba | Method for simulating deposition film shape and method for manufacturing electronic device |
| US20090305021A1 (en) * | 2008-06-10 | 2009-12-10 | Sumco Corporation | Film thickness measurement method, epitaxial wafer production process and epitaxial wafer |
| CN101826447A (en) * | 2009-03-04 | 2010-09-08 | 东京毅力科创株式会社 | Film deposition apparatus and film deposition method |
| US20100242631A1 (en) * | 2009-03-31 | 2010-09-30 | Petra Hetzer | Method and system for particles analysis in microstructure devices by isolating particles |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606528A (en) * | 2013-10-23 | 2014-02-26 | 上海华力微电子有限公司 | Pre-tungsten-growth silicon detection device and method |
| CN103606528B (en) * | 2013-10-23 | 2016-03-23 | 上海华力微电子有限公司 | Silicon chip checkout gear before growth tungsten and method |
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