CN103173823B - A kind of anneal chamber be applied in copper electroplating machine - Google Patents
A kind of anneal chamber be applied in copper electroplating machine Download PDFInfo
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- CN103173823B CN103173823B CN201310122180.6A CN201310122180A CN103173823B CN 103173823 B CN103173823 B CN 103173823B CN 201310122180 A CN201310122180 A CN 201310122180A CN 103173823 B CN103173823 B CN 103173823B
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Abstract
The invention discloses a kind of anneal chamber be applied in copper electroplating machine, at least comprise: back heating plate, for being arranged at wafer back part, this wafer rear being heated; Top firing device, be arranged at the top of this back heating plate but do not contact this wafer, the temperature set is taked to heat this crystal column surface, the present invention heats crystal column surface by installing a top firing dish on original heating plate, make the copper heat by conduction speed of crystal column surface fast, easy quickening annealing, thus grown up in the crystal orientation of copper, thermal conduction is in the through hole that surface is extremely tiny, make crystal orientation distributional stability, effectively can improve annealing rate, and the cavity can effectively preventing copper to be formed due to old-fashioned annealing and electromigratory problem.
Description
Technical field
The present invention to withdraw from a secret society or underworld gang cavity about one, particularly relates to a kind of new-type anneal chamber be applied in copper electroplating machine.
Background technology
After electroplating machine has been electroplated, wafer (wafer) often will be annealed, and present anneal mode is back side heating, thus the layers of copper of crystal column surface is conducted to by the silicon heat transfer at the back side, wafer is annealed, the crystal orientation of wafer copper is fixed, under this pattern, easy appearance heat transfer is slow, the wafer crystal orientation set time is long, is exactly in addition easily to appear at copper in tiny longitudinal hole owing to being lower floor's heat transfer, when crystal orientation is formed and be fixing, easy appearance cavity, thus cause ELECTROMIGRATION PHENOMENON.
Summary of the invention
For overcoming the deficiency that above-mentioned prior art exists, the object of the present invention is the Experimental Control System and the method that provide a kind of auxiliary process flow process, it by installing a top firing dish on original heating plate, the mode of toasting is taked to heat, the copper heat by conduction speed of such crystal column surface is fast, easy quickening annealing, thus grown up in the crystal orientation of copper, thermal conduction is in the through hole that surface is extremely tiny, make crystal orientation distributional stability, effectively can improve annealing rate, the cavity can effectively preventing copper to be formed due to old-fashioned annealing and electromigratory problem.
For reaching above-mentioned and other object, the present invention proposes a kind of anneal chamber be applied in copper electroplating machine, at least comprises:
Back heating plate, heats this wafer rear for being arranged at wafer back part;
Top firing device, is arranged at the top of this back heating plate but does not contact this wafer, takes the temperature set to heat this crystal column surface.
Further, this anneal chamber also comprises temperature detection device, and this temperature detection device is arranged between this back heating plate and this top firing device, for detecting the temperature between this wafer area.
Further, this anneal chamber also comprises a temperature control equipment, and this temperature control equipment is connected to this temperature detection device and this top firing device, regulates with the temperature of the temperature detected according to this temperature detection device to this top firing device.
Further, this top firing device takes the mode of toasting to heat this crystal column surface.
Further, this top firing device, back heating plate, temperature detection device and thermostatic supporting quantity can be 1 cover, this copper electroplating machine supporting.
Compared with prior art, a kind of anneal chamber be applied in copper electroplating machine of the present invention is passed through to design a top firing device on the heating plate of original back, this top firing device takes the temperature of certain setting, but do not contact wafer, the mode of toasting is taked to heat, the copper heat by conduction speed of such crystal column surface is fast, easy quickening annealing, thus grown up in the crystal orientation of copper, thermal conduction is in the through hole that surface is extremely tiny, make crystal orientation distributional stability, simultaneously, the present invention also feeds back annealing temperature by the arrangement for detecting increasing detecting wafer silicon carbide, effectively can improve annealing rate, the cavity can effectively preventing copper to be formed due to old-fashioned annealing and electromigratory problem.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of anneal chamber be applied in copper electroplating machine of the present invention.
Embodiment
Below by way of specific specific examples and accompanying drawings embodiments of the present invention, those skilled in the art can understand other advantage of the present invention and effect easily by content disclosed in the present specification.The present invention is also implemented by other different specific examples or is applied, and the every details in this specification sheets also can based on different viewpoints and application, carries out various modification and change not deviating under spirit of the present invention.
Fig. 1 is the structural representation of a kind of anneal chamber be applied in copper electroplating machine of the present invention.As shown in Figure 1, a kind of anneal chamber be applied in copper electroplating machine of the present invention, at least comprises: back heating plate 10 and top firing device 11.
Wherein back heating plate 10 is arranged at the back of wafer 12 (wafer), for heating wafer 12 back side; Top firing device is arranged at above back heating plate 10, take the temperature of certain setting, but do not contact wafer 12, take the mode of toasting to the surface heating of wafer 11, the copper heat by conduction speed on such wafer 12 surface is fast, easy quickening annealing, thus being grown up in the crystal orientation of copper, thermal conduction in tiny through hole, makes crystal orientation distributional stability from surface, effectively can improve annealing rate, the cavity can effectively preventing copper to be formed due to old-fashioned annealing and electromigratory problem.
Preferably, a kind of anneal chamber be applied in copper electroplating machine of the present invention also comprises a temperature detection device 13 and temperature control equipment (not shown), temperature detection device 13 can be arranged between back heating plate 10 and top firing device 11, for detecting the temperature in wafer 12 interval, temperature control equipment is connected to temperature detection device 13 and top firing device 11, mediates with the temperature of the temperature detected according to temperature detection device 13 to top firing device 11.
Visible, a kind of anneal chamber be applied in copper electroplating machine of the present invention is passed through to design a top firing device on the heating plate of original back, this top firing device takes the temperature of certain setting, but do not contact wafer, the mode of toasting is taked to heat, the copper heat by conduction speed of such crystal column surface is fast, easy quickening annealing, thus grown up in the crystal orientation of copper, thermal conduction is in the through hole that surface is extremely tiny, make crystal orientation distributional stability, simultaneously, the present invention also feeds back annealing temperature by the arrangement for detecting increasing detecting wafer silicon carbide, effectively can improve annealing rate, the cavity can effectively preventing copper to be formed due to old-fashioned annealing and electromigratory problem.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any those skilled in the art all without prejudice under spirit of the present invention and category, can carry out modifying to above-described embodiment and change.Therefore, the scope of the present invention, should listed by claims.
Claims (3)
1. be applied to the anneal chamber in copper electroplating machine, at least comprise:
Back heating plate, heats this wafer rear for being arranged at wafer back part;
Top firing device, is arranged at the top of this back heating plate but does not contact this wafer, takes the temperature set to heat this crystal column surface;
This anneal chamber also comprises temperature detection device, and this temperature detection device is arranged between this back heating plate and this top firing device, for detecting the temperature between this wafer area;
This anneal chamber also comprises a temperature control equipment, and this temperature control equipment is connected to this temperature detection device and this top firing device, regulates with the temperature of the temperature detected according to this temperature detection device to this top firing device.
2. a kind of anneal chamber be applied in copper electroplating machine as claimed in claim 1, is characterized in that: this top firing device takes the mode of toasting to heat this crystal column surface.
3. a kind of anneal chamber be applied in copper electroplating machine as claimed in claim 1, is characterized in that: this top firing device, back heating plate, temperature detection device and thermostatic supporting quantity can be 1 cover, this copper electroplating machine supporting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310122180.6A CN103173823B (en) | 2013-04-09 | 2013-04-09 | A kind of anneal chamber be applied in copper electroplating machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310122180.6A CN103173823B (en) | 2013-04-09 | 2013-04-09 | A kind of anneal chamber be applied in copper electroplating machine |
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| CN103173823A CN103173823A (en) | 2013-06-26 |
| CN103173823B true CN103173823B (en) | 2015-09-30 |
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| CN201310122180.6A Active CN103173823B (en) | 2013-04-09 | 2013-04-09 | A kind of anneal chamber be applied in copper electroplating machine |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10126053B2 (en) | 2016-09-02 | 2018-11-13 | International Business Machines Corporation | Precision dual annealing apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10570015B2 (en) | 2016-09-02 | 2020-02-25 | International Business Machines Corporation | Minimizing tin loss during thermal processing of kesterite films |
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| CN1221813A (en) * | 1993-12-17 | 1999-07-07 | 布鲁克斯自动化公司 | Apparatus for heating or cooling wafers |
| CN1815119A (en) * | 2005-01-31 | 2006-08-09 | 诺利塔克股份有限公司 | Step forward heat treatment device |
| CN1967118A (en) * | 2005-11-15 | 2007-05-23 | 爱斯佩克株式会社 | Heat treatment device |
| CN101150038A (en) * | 2006-09-19 | 2008-03-26 | 通用电气公司 | Assembly with enhanced thermal uniformity and method for making thereof |
| CN101315872A (en) * | 2007-05-28 | 2008-12-03 | 海力士半导体有限公司 | Apparatus and method for thermally treating wafer |
| CN101399161A (en) * | 2007-09-26 | 2009-04-01 | 盛美半导体设备（上海）有限公司 | Heat treatment method and device for semiconductor workpieces |
| CN101399160A (en) * | 2007-09-26 | 2009-04-01 | 盛美半导体设备（上海）有限公司 | Heat treatment method and device for semiconductor workpieces |
| CN102034684A (en) * | 2010-10-18 | 2011-04-27 | 清华大学 | Device and method for introducing multi-gradient temperature field in laser annealing process of silicon wafer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3297288B2 (en) * | 1996-02-13 | 2002-07-02 | 株式会社東芝 | Apparatus and method for manufacturing semiconductor device |
| JP2004072037A (en) * | 2002-08-09 | 2004-03-04 | Renesas Technology Corp | Method for manufacturing semiconductor device |
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2013
- 2013-04-09 CN CN201310122180.6A patent/CN103173823B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1221813A (en) * | 1993-12-17 | 1999-07-07 | 布鲁克斯自动化公司 | Apparatus for heating or cooling wafers |
| CN1815119A (en) * | 2005-01-31 | 2006-08-09 | 诺利塔克股份有限公司 | Step forward heat treatment device |
| CN1967118A (en) * | 2005-11-15 | 2007-05-23 | 爱斯佩克株式会社 | Heat treatment device |
| CN101150038A (en) * | 2006-09-19 | 2008-03-26 | 通用电气公司 | Assembly with enhanced thermal uniformity and method for making thereof |
| CN101315872A (en) * | 2007-05-28 | 2008-12-03 | 海力士半导体有限公司 | Apparatus and method for thermally treating wafer |
| CN101399161A (en) * | 2007-09-26 | 2009-04-01 | 盛美半导体设备（上海）有限公司 | Heat treatment method and device for semiconductor workpieces |
| CN101399160A (en) * | 2007-09-26 | 2009-04-01 | 盛美半导体设备（上海）有限公司 | Heat treatment method and device for semiconductor workpieces |
| CN102034684A (en) * | 2010-10-18 | 2011-04-27 | 清华大学 | Device and method for introducing multi-gradient temperature field in laser annealing process of silicon wafer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US10126053B2 (en) | 2016-09-02 | 2018-11-13 | International Business Machines Corporation | Precision dual annealing apparatus |
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| CN103173823A (en) | 2013-06-26 |
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