CN103165822A - Semitransparent positive electrode of organic light emitting diode (OLED) device and OLED device - Google Patents
Semitransparent positive electrode of organic light emitting diode (OLED) device and OLED device Download PDFInfo
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- CN103165822A CN103165822A CN2011104134463A CN201110413446A CN103165822A CN 103165822 A CN103165822 A CN 103165822A CN 2011104134463 A CN2011104134463 A CN 2011104134463A CN 201110413446 A CN201110413446 A CN 201110413446A CN 103165822 A CN103165822 A CN 103165822A
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Abstract
The invention provides a semitransparent positive electrode of an organic light emitting diode (OLED) device, and further provides the OLED device. The semitransparent positive electrode is made of high-conductivity metal mixed with high work function inorganic semiconductor materials. One kind or several kinds of molybdenum oxide, tungsten oxide and vanadium pentoxide is or are selected as the high work function inorganic semiconductor materials. One kind or several kinds of silver, aluminum and copper is or are selected as the high conductivity metal. The semitransparent positive electrode of the OLED device improves electrical conductivity and hole injection effect and is suitable for large-scale industrial application of OLED devices.
Description
[technical field]
The present invention relates to OLED Display Technique field, particularly relate to a kind of translucent anode and OLED device of OLED device.
[background technology]
OLED (organic light emitting diode) Display Technique due to its good luminescent properties and widely application prospect paid attention to.The OLED display device can be divided into passive type and active two kinds according to type of drive, passive type OLED display device is mainly used in small size, low resolution display screen, and active OLED display spare is furnished with TFT (thin film field-effect pipe) switch for each pixel, in can realizing, large-sized high definition shows, become the main flow of current OLED Display Technique development.
Difference according to the exit direction of the light of OLED device is divided into end emitting OLED device and top-emitting OLED device.If from device substrate direction outgoing utilizing emitted light, be called end emitting OLED device; If from the device direction outgoing reverberation of substrate dorsad, be called top-emitting OLED device.Inverted OLED device is opposite with the preparation flow of general OLED device, is at first to prepare negative electrode on substrate, then prepares organic function layer, prepares at last anode.
Traditional inversion type top emission OLED device is mainly the material with ITO (tin indium oxide) or Ag (silver) conduct preparation anode.Adopt ITO to have good light transmission (＞90%) as the preparation material, but its conductivity is relatively poor, sputtering technology can largely affect the luminescent properties of OLED device to the damage of organic material.Adopt the mode of evaporation to prepare the metal A g (silver) of 20 nanometers left and right as translucent anode, has electric conductivity preferably, but the work function of metal A g is lower, weak effect is injected in the hole, therefore must add that the hole injection layer about 1～3 nanometer carries out the finishing of electrode, just can reach the effect of hole injection preferably, and the hole injection layer of 1～3 nanometer is difficult to guarantee its uniformity and repeatability in industrial production, and this just brings certain difficulty for its industrial large-scale application.In addition, the light transmission relatively poor (30% left and right) of 20 nanometer left and right metal A g films if can further improve its light transmission although further reduce its thickness, also will cause the decline of Ag film conductivity, reduce the OLED performance of devices.
[summary of the invention]
Based on this, be necessary to provide a kind of electric conductivity and hole to inject the translucent anode of effective OLED device.
A kind of translucent anode of OLED device, described translucent anode is made by the high-conductive metal of doping high work function inorganic semiconductor material, the electrodeless semi-conducting material of described high work function is selected from one or more in molybdenum oxide, tungsten oxide, vanadic oxide, and described high-conductive metal is selected from one or more in silver, aluminium, copper.
In a preferred embodiment, the doping mass concentration of the electrodeless semi-conducting material of described high work function is greater than 0 and less than 10%.
In a preferred embodiment, described translucent anode adopts the vacuum thermal evaporation codoping process to make, and thickness is 10～25 nanometers.
In addition, also provide a kind of OLED device.
A kind of OLED device, comprise translucent anode, described translucent anode is made by the high-conductive metal of doping high work function inorganic semiconductor material, the electrodeless semi-conducting material of described high work function is selected from one or more in molybdenum oxide, tungsten oxide, vanadic oxide, and described high-conductive metal is selected from one or more in silver, aluminium, copper.
In a preferred embodiment, in described high-conductive metal the doping mass concentration of the electrodeless semi-conducting material of high work function greater than 0 and less than 10%.
In a preferred embodiment, described translucent anode adopts the vacuum thermal evaporation codoping process to make, and thickness is 10～25 nanometers.
In a preferred embodiment, also comprise reflective cathode, electron transfer layer, hole blocking layer, luminescent layer, electronic barrier layer and hole transmission layer, described reflective cathode, electron transfer layer, hole blocking layer, luminescent layer, electronic barrier layer and hole transmission layer self-reflection negative electrode superpose successively and arrange, and described translucent anode is superimposed upon on described hole transmission layer.
In a preferred embodiment, described hole transmission layer is made by the hole mobile material of the electrodeless semi-conducting material of the described high work function of doping, described electronic barrier layer is made by hole mobile material, described hole blocking layer is made by electron transport material, and described electron transfer layer is made by described electron transport material or by the electron transport material of doping.
In a preferred embodiment, described hole mobile material is selected from one or more in NPB, TPD, m-MTDATA, 2T-NATA, MeO-TPD, and described electron transport material is selected from one or more in Alq3, Liq, TPBi, Bphen, BAlq.
In a preferred embodiment, described reflective cathode adopts magnesium and silver alloy.
The translucent anode of above-mentioned OLED device and OLED device, in high-conductive metal, doping high work function semi-conducting material not only can guarantee the conductivity of anode but also can improve the work function of anode, and the raising of work function makes translucent anode have preferably the hole to inject effect.In addition, the corresponding minimizing of the content of high-conductive metal has improved the light transmittance of translucent anode.
[description of drawings]
Fig. 1 is the structural representation of the OLED device of preferred embodiment.
[embodiment]
Inject for the anode conducting and the hole that solve traditional OLED device the problem that effect can not be taken into account, proposed a kind of translucent anode and OLED device of OLED device.
As shown in Figure 1, the translucent anode of the OLED device of preferred embodiment, this translucent anode 170 is made by the high-conductive metal of doping high work function inorganic semiconductor material.The electrodeless semi-conducting material of high work function is selected from one or more in molybdenum oxide, tungsten oxide, vanadic oxide.High-conductive metal is selected from one or more in silver, aluminium, copper.
The translucent anode of above-mentioned OLED device, in high-conductive metal, doping high work function semi-conducting material not only can guarantee the conductivity of anode but also can improve the work function of anode, the raising of work function makes translucent anode 170 have preferably the hole to inject effect.In addition, the corresponding minimizing of the content of high-conductive metal has improved the light transmittance of translucent anode.The light transmittance of translucent anode improves, and can reduce the microcavity effect of OLED device and the angle situation of change of OLED device luminescent spectrum, improves the display effect of translucent anode in the OLED device, improves the application power of translucent anode in transparent devices.
In the present embodiment, the doping mass concentration of the electrodeless semi-conducting material of high work function is greater than 0 and less than 10%.Because the doping mass concentration of high work function semi-conducting material is lower, conductivity that can the appreciable impact anode.
In the present embodiment, translucent anode 170 adopts the vacuum thermal evaporation codoping process to make, and thickness is 10～25 nanometers.Evaporation source adopts resistant to elevated temperatures crucible or boat, can with the process matching of organic material.The thickness of translucent anode 170 is lower, and light transmittance is better.
The OLED device of preferred embodiment comprises translucent anode 170.Translucent anode 170 is made by the high-conductive metal of doping high work function inorganic semiconductor material.The electrodeless semi-conducting material of high work function is selected from one or more in molybdenum oxide, tungsten oxide, vanadic oxide.High-conductive metal is selected from one or more in silver, aluminium, copper.
In the present embodiment, in high-conductive metal the doping mass concentration of the electrodeless semi-conducting material of high work function greater than 0 and less than 10%.
In the present embodiment, translucent anode 170 adopts the vacuum thermal evaporation codoping process to make, and thickness is 10～25 nanometers.Evaporation source adopts resistant to elevated temperatures crucible or boat, can with the process matching of organic material.The thickness of translucent anode 170 is lower, and light transmittance is better.
In the present embodiment, the OLED device also comprises reflective cathode 110, electron transfer layer 120, hole blocking layer 130, luminescent layer 140, electronic barrier layer 150, hole transmission layer 160.Reflective cathode 110, electron transfer layer 120, hole blocking layer 130, luminescent layer 140, electronic barrier layer 150, hole transmission layer 160 self-reflection negative electrodes 110 superpose successively and arrange, and translucent anode 170 is superimposed upon on hole transmission layer 150.The doping of high work function semi-conducting material can corresponding raising high-conductive metal anode work function, the raising of work function makes translucent anode 160 have the effect of hole injection preferably, therefore no longer need to adopt the technique of hole injection layer can reach good hole injection effect, improved the ability of its large-scale industrial application.
In the present embodiment, hole transmission layer 160 is made by the electrodeless semi-conductive hole mobile material of doping high work function, electronic barrier layer is made by hole mobile material, and hole blocking layer is made by electron transport material, and electron transfer layer is made by electron transport material or by the electron transport material of doping.Being doping in the electron transport material of doping is divided into cesium carbonate.
in the present embodiment, hole mobile material is selected from NPB (N, N ' Bis (naphthalene-1-yl)-N, N '-bis (phenyl)-benzidine), TPD (N, N ' Bis (3-methylphenyl)-N, N '-bis (phenyl)-benzidine), m-MTDATA (4, 4 ', 4 " tris (N-3-methylphenyl-N-phenyl-amino) triphenylamine), 2T-NATA (4, 4 ', 4 " tris (N-(naphthalene-2-yl)-N-phenyl-amino) triphenylamine), MeO-TPD (N, N, N ', N '-Tetrakis (4-methoxyphenyl) benzidine) one or more in, electron transport material is selected from Alq3 (Tris (8-hydroxy-quinolinato) aluminium), Liq (8-Hydroxyquinolinolato-lithium), TPBi (2, 2 ', 2 " (1, 3, 5-Benzinetriyl)-tris (1-phenyl-1-H-benzimidazole)), Bphen (4, 7-Dipheny 1-1, 10-phenanthroline), one or more in BAlq (Bis (2-methyl-8-quinolinolate)-4-(phenylphenolato) aluminium).
In the present embodiment, reflective cathode adopts magnesium and silver alloy.Reflective cathode can also adopt the high-conductive metal of doping cesium carbonate to make.
The translucent anode of above-mentioned OLED device and OLED device, the work function that in translucent anode 170, the doping of high work function semi-conducting material can corresponding raising high-conductive metal anode, the raising of work function makes translucent anode 160 have the effect of hole injection preferably, therefore no longer needs to adopt the technique of hole injection layer can reach good hole injection effect.When adopting the electrodeless semi-conductive hole mobile material of doping high work function as hole transmission layer 160, effect is injected in the hole that can reach approximate ohmic contact.Electronic barrier layer 150 and hole blocking layer 130 have improved the carrier balance of device.Do not contain electron injecting layer and the hole injection layer structure of traditional OLED device in device, manufacture craft is simpler, helps the large-scale application of this OLED device in industry.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.Should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. the translucent anode of an OLED device, it is characterized in that, described translucent anode is made by the high-conductive metal of doping high work function inorganic semiconductor material, the electrodeless semi-conducting material of described high work function is selected from one or more in molybdenum oxide, tungsten oxide, vanadic oxide, and described high-conductive metal is selected from one or more in silver, aluminium, copper.
2. the translucent anode of OLED device according to claim 1, is characterized in that, the doping mass concentration of the electrodeless semi-conducting material of described high work function is greater than 0 and less than 10%.
3. the translucent anode of OLED device according to claim 1, is characterized in that, described translucent anode adopts the vacuum thermal evaporation codoping process to make, and thickness is 10～25 nanometers.
4. OLED device, comprise translucent anode, it is characterized in that, described translucent anode is made by the high-conductive metal of doping high work function inorganic semiconductor material, the electrodeless semi-conducting material of described high work function is selected from one or more in molybdenum oxide, tungsten oxide, vanadic oxide, and described high-conductive metal is selected from one or more in silver, aluminium, copper.
5. OLED device according to claim 4, is characterized in that, in described high-conductive metal, the doping mass concentration of the electrodeless semi-conducting material of high work function is greater than 0 and less than 10%.
6. OLED device according to claim 4, is characterized in that, described translucent anode adopts the vacuum thermal evaporation codoping process to make, and thickness is 10～25 nanometers.
7. OLED device according to claim 4, it is characterized in that, also comprise reflective cathode, electron transfer layer, hole blocking layer, luminescent layer, electronic barrier layer and hole transmission layer, described reflective cathode, electron transfer layer, hole blocking layer, luminescent layer, electronic barrier layer and hole transmission layer self-reflection negative electrode superpose successively and arrange, and described translucent anode is superimposed upon on described hole transmission layer.
8. OLED device according to claim 4, it is characterized in that, described hole transmission layer is made by the hole mobile material of the electrodeless semi-conducting material of the described high work function of doping, described electronic barrier layer is made by described hole mobile material, described hole blocking layer is made by electron transport material, and described electron transfer layer is made by described electron transport material or by the electron transport material of doping.
9. OLED device according to claim 8, it is characterized in that, described hole mobile material is selected from one or more in NPB, TPD, m-MTDATA, 2T-NATA, MeO-TPD, and described electron transport material is selected from one or more in Alq3, Liq, TPBi, Bphen, BAlq.
10. the described OLED device of any one according to claim 7 to 9, is characterized in that, described reflective cathode adopts magnesium and silver alloy.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016011794A1 (en) * | 2014-07-25 | 2016-01-28 | 京东方科技集团股份有限公司 | Transparent conductive electrode and preparation method therefor and oled display device |
| CN107146853A (en) * | 2017-05-03 | 2017-09-08 | 武汉华星光电技术有限公司 | Organic light-emitting display device |
| CN110364634A (en) * | 2019-07-12 | 2019-10-22 | 南方科技大学 | light emitting diode and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030168973A1 (en) * | 2002-03-08 | 2003-09-11 | Shuit-Tong Lee | High-qualty aluminum-doped zinc oxide layer as transparent conductive electrode for organic light-emitting devices |
| US20030173894A1 (en) * | 2002-03-15 | 2003-09-18 | Lg.Philips Lcd Co., Ltd. | Organic electroluminescent device including transparent conductive layer and fabricating method thereof |
| CN101226993A (en) * | 2007-01-18 | 2008-07-23 | 财团法人工业技术研究院 | Transparent electrode and organic electroluminescence device including the same |
| CN102110783A (en) * | 2010-12-22 | 2011-06-29 | 西安文景光电科技有限公司 | Low-voltage-driven hole injection layer serving as OLED device of luminescence adjustment layer |
| CN102185111A (en) * | 2011-04-21 | 2011-09-14 | 河北工业大学 | Transition metal oxide inverted organic LED (light emitting diode) |
-
2011
- 2011-12-13 CN CN2011104134463A patent/CN103165822A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030168973A1 (en) * | 2002-03-08 | 2003-09-11 | Shuit-Tong Lee | High-qualty aluminum-doped zinc oxide layer as transparent conductive electrode for organic light-emitting devices |
| US20030173894A1 (en) * | 2002-03-15 | 2003-09-18 | Lg.Philips Lcd Co., Ltd. | Organic electroluminescent device including transparent conductive layer and fabricating method thereof |
| CN101226993A (en) * | 2007-01-18 | 2008-07-23 | 财团法人工业技术研究院 | Transparent electrode and organic electroluminescence device including the same |
| CN102110783A (en) * | 2010-12-22 | 2011-06-29 | 西安文景光电科技有限公司 | Low-voltage-driven hole injection layer serving as OLED device of luminescence adjustment layer |
| CN102185111A (en) * | 2011-04-21 | 2011-09-14 | 河北工业大学 | Transition metal oxide inverted organic LED (light emitting diode) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016011794A1 (en) * | 2014-07-25 | 2016-01-28 | 京东方科技集团股份有限公司 | Transparent conductive electrode and preparation method therefor and oled display device |
| CN107146853A (en) * | 2017-05-03 | 2017-09-08 | 武汉华星光电技术有限公司 | Organic light-emitting display device |
| CN110364634A (en) * | 2019-07-12 | 2019-10-22 | 南方科技大学 | light emitting diode and preparation method thereof |
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Inventor after: Cao Jin Inventor after: Wang Li Inventor after: Rong Jialing Inventor after: Zhang Jianhua Inventor before: Cao Jin Inventor before: Wang Li Inventor before: Rong Jialing Inventor before: Zhang Jianhua |
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Application publication date: 20130619 |