CN103165664B - Semiconductor device and method, semi-conductor device manufacturing method - Google Patents
Semiconductor device and method, semi-conductor device manufacturing method Download PDFInfo
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Abstract
The invention discloses a kind of semiconductor device and method, semi-conductor device manufacturing method.This semiconductor device includes: silicon substrate, is formed with groove in described silicon substrate；Inculating crystal layer, comprises silicon and is formed on the bottom of described groove；Body layer, is formed in described groove on described inculating crystal layer；And cap layers, comprise silicon and be formed on described body layer.Containing boron in described cap layers, or containing at least one in phosphorus and arsenic.In accordance with the invention it is possible to improve the unit interval volume of production of semiconductor device.
Description
Technical field
The present invention relates to semiconductor applications, particularly to semiconductor device and semiconductor device manufacture
Method.
Background technology
Embedded SiGe (SiGe) is widely used in advanced complementary metal oxide semiconductor
(CMOS) in logical device product, to improve the performance of PMOS transistor.
Fig. 1 illustrates a kind of semiconductor device according to prior art, and this semiconductor device includes:
Silicon substrate 100, is formed with groove in described silicon substrate 100；Inculating crystal layer (seed layer)
120, it is formed on the bottom of described groove；Body layer (bulk layer) 130, is formed at institute
State on inculating crystal layer 120；And cap layers 140, comprise silicon and be formed at described body layer 130
On.Nickel can be deposited in cap layers 140.The cap layers 140 comprising silicon can carry out reacting and shape with nickel
Become nisiloy (NiSi) layer.Described nisiloy layer can be used as between source/drain region and metal electrode
Electric contacting layer.
Summary of the invention
It was found by the inventors of the present invention that according to above-mentioned prior art, the formation speed of cap layers is relatively
Slowly, thus the unit interval volume of production of semiconductor device is relatively low.
The above-mentioned problems of the prior art found for inventor, it is proposed that according to this
The new technical scheme of invention.
More specifically, according to an aspect of the invention, it is provided a kind of semiconductor device, bag
Include: silicon substrate, in described silicon substrate, be formed with groove；Inculating crystal layer, comprises silicon and is formed
On the bottom of described groove；Body layer, comprises SiGe and is formed in described groove described
On inculating crystal layer；And cap layers, comprise silicon and be formed on described body layer, wherein, described cap
Containing boron in Ceng.
According to a kind of possible illustrative embodiments, described body layer also can comprise boron, described cap
Layer also can comprise germanium, and described inculating crystal layer also can comprise germanium, and described cap layers also can comprise fluorine.
According to a kind of possible illustrative embodiments, it is brilliant that described body layer can serve as PMOS
The source electrode of body pipe or drain electrode.
According to a kind of possible illustrative embodiments, the concentration of the boron in described cap layers can be
1×1018Atom/cm3To 5 × 1020Atom/cm3。
According to another aspect of the present invention, it is provided that a kind of semiconductor device, including: silicon serves as a contrast
The end, in described silicon substrate, it is formed with groove；Inculating crystal layer, comprises silicon and is formed at described recessed
On the bottom of groove；Body layer, comprises carborundum and is formed in described groove at described inculating crystal layer
On；And cap layers, comprise silicon and be formed on described body layer, wherein, described cap layers containing
There is at least one in phosphorus and arsenic.
According to a kind of possible illustrative embodiments, described inculating crystal layer can comprise carborundum, institute
State cap layers and can comprise carborundum.
According to a kind of possible illustrative embodiments, described semiconductor device is used for being formed
The source electrode of nmos pass transistor or drain electrode.
According to a kind of possible illustrative embodiments, phosphorus and the concentration of arsenic in described cap layers are total
With for 1 × 1018Atom/cm3To 5 × 1020Atom/cm3。
According to a kind of possible illustrative embodiments, above-mentioned cap layers can have and comprise nickel
The electric contacting layer of silicon.
According to a kind of possible illustrative embodiments, above-mentioned groove can be that U-shaped is recessed
Groove, or can also be ∑ connected in star.
According to another aspect of the present invention, it is provided that a kind of method, semi-conductor device manufacturing method, bag
Include: form groove in a silicon substrate；The inculating crystal layer comprising silicon is formed in the bottom of described groove；
In described groove, on described inculating crystal layer, growth comprises the body layer of SiGe；And at described body layer
Upper formation comprises the cap layers of silicon, and wherein said cap layers comprises boron.
According to a kind of possible illustrative embodiments, described cap layers can be come by epitaxial growth
Being formed, wherein process gas can comprise BH3、B2H6、BF3And BCl3In at least one
Individual, SiH4And SiH2Cl2In at least one and hydrogen.
According to a kind of possible illustrative embodiments, described body layer can pass through selective epitaxial
Growth is formed, and wherein process gas can comprise SiH4Or SiH2Cl2, and described technique
Gas can comprise GeH4And hydrogen.
According to a kind of possible illustrative embodiments, described process gas can also comprise
BH3、B2H6、BF3And BCl3In at least one.
According to a kind of possible illustrative embodiments, the process warm of described selective epitaxial growth
Degree can be 500 DEG C to 800 DEG C, and operation pressure can be 1Torr to 500Torr.
According to a kind of possible illustrative embodiments, described SiH4Or SiH2Cl2And GeH4
Flow velocity can be 1sccm to 1000sccm, the flow velocity of described hydrogen can be 0.1slm extremely
50slm。
According to a kind of possible illustrative embodiments, described BH3、B2H6、BF3And BCl3
In the flow velocity of at least one can be 1sccm to 1000sccm.
According to a kind of possible illustrative embodiments, the method can also include: at described cap
The electric contacting layer comprising nisiloy is formed on layer.
According to another aspect of the present invention, it is provided that a kind of method, semi-conductor device manufacturing method, bag
Include: form groove in a silicon substrate；The inculating crystal layer comprising silicon is formed in the bottom of described groove；
On described inculating crystal layer, the body layer comprising carborundum is formed in described groove；And at described body
Formed on layer and comprise the cap layers of silicon, wherein said cap layers comprise in phosphorus and arsenic at least one.
According to a kind of possible illustrative embodiments, described cap layers can be come by epitaxial growth
Being formed, wherein process gas can comprise AsH3And PH3In at least one, SiH4With
SiH2Cl2In at least one and hydrogen.
According to a kind of possible illustrative embodiments, described body layer can pass through selective epitaxial
Growth is formed, and wherein process gas can comprise SiH4Or SiH2Cl2, and described technique
Gas can comprise CH4、CH3Cl、CH2Cl2And CHCl3In at least one, and
Hydrogen.
According to a kind of possible illustrative embodiments, the process warm of described selective epitaxial growth
Degree can be 400 DEG C to 800 DEG C, and operation pressure can be 1Torr to 500Torr.
According to a kind of possible illustrative embodiments, described SiH4Or SiH2Cl2Flow velocity can
Think 1sccm to 1000sccm, described CH4、CH3Cl、CH2Cl2And CHCl3In
The flow velocity of at least one can be 5sccm to 50sccm, and the flow velocity of described hydrogen can be
0.1slm to 50slm.
According to a kind of possible illustrative embodiments, the method also includes: in described cap layers
Form the electric contacting layer comprising nisiloy.
According to the present invention, the formation speed of cap layers is accelerated, enabling improve semiconductor device
Unit interval volume of production.
By detailed description to the exemplary embodiment of the present invention referring to the drawings, the present invention
Further feature and advantage will be made apparent from.
Accompanying drawing explanation
The accompanying drawing of the part constituting description schematically illustrates embodiments of the invention, and
And together with the description for the principle of the present invention is described.
Fig. 1 is the view of the semiconductor device schematically showing prior art.
Fig. 2 a～2d is the semiconductor device schematically showing the exemplary embodiment according to the present invention
The sectional view of the technological process of the example of part manufacture method.
Fig. 3 is the quasiconductor of the modification schematically showing the exemplary embodiment according to the present invention
The view of device.
Detailed description of the invention
The various exemplary embodiments of the present invention are described in detail now with reference to accompanying drawing.Should note
Meaning: unless otherwise expressly noted, the parts illustrated the most in these embodiments and the phase of step
Layout, numerical expression and numerical value are not limited the scope of the invention.
Simultaneously, it should be noted that for the ease of describing, the chi of the various piece shown in accompanying drawing
Very little not necessarily according to actual proportionate relationship drafting.
Description at least one exemplary embodiment is merely illustrative below, never conduct
To the present invention and application thereof or any restriction of using method.Additionally, shown here and discussion
All examples in, unless otherwise expressly noted, the most any concrete numerical value only should be interpreted
It is only exemplary, and not as limitation of the present invention.According to actual design needs, example
Property embodiment in other example it is of course possible to have different values.
May not make in detail for technology, method and apparatus known to person of ordinary skill in the relevant
Thin discussion is to avoid the main points of the fuzzy present invention.In the appropriate case, these are for association area
Known to those of ordinary skill, technology, method and apparatus should be considered granted patent description
A part.
Similar label represents similar project in following accompanying drawing with letter, therefore, once
A certain project is defined in an accompanying drawing, then need not enter it in accompanying drawing subsequently
One step discussion.
In the disclosure, term " semiconductor device " means to comprise the device of semi-conducting material,
It is possible not only to the semiconductor device product including making, but also can include semiconductor device
At the intermediate products manufactured or in the course of processing.
Fig. 2 a～2d is the semiconductor device schematically showing the exemplary embodiment according to the present invention
The sectional view of the technological process of the example of part manufacture method.Fig. 3 is to schematically show according to this
The view of the semiconductor device of the modification of the exemplary embodiment of invention.Hereinafter with reference to figure
2a～2d and Fig. 3 describes various embodiments of the present invention and modification thereof.
First embodiment
As shown in Figure 2 d, include according to the semiconductor device of the first embodiment of the present invention: silicon
Substrate 200, is formed with groove in described silicon substrate；Inculating crystal layer 220, comprises silicon and shape
Become on the bottom of described groove；Body layer 230, comprises SiGe (SiGe) and is formed at institute
State in groove on described inculating crystal layer 220；And cap layers 240, comprise silicon and be formed at institute
State on body layer 230.First embodiment of the invention is characterised by, contains in described cap layers 240
Boron (B) element.Described boron element such as can be to have the form of boron simple substance, it is possible to have
Such as BF3Etc the form of compound of boron.Preferably, the concentration of the boron in described cap layers
It is 1 × 1018Atom/cm3To 5 × 1020Atom/cm3。
According to a kind of embodiment, described body layer 230 can also comprise boron element.Described boron unit
Element such as can be to have the form of boron simple substance, it is possible to have such as BF3Etc the chemical combination of boron
The form of thing.
According to a kind of embodiment, described cap layers 240 can also comprise germanium.That is, described cap layers
240 can comprise SiGe.
According to a kind of embodiment, described inculating crystal layer 220 can also comprise germanium.That is, described seed
Crystal layer 220 can comprise SiGe.
The atomic percent of the germanium in inculating crystal layer 220 can be such as 0%～25%, body layer 230
In the atomic percent of germanium can be such as 20%～40%, and the atom hundred of the germanium in cap layers
Proportion by subtraction can be such as 0～20%.
Described groove can have suitable shape according to concrete application.Such as, described groove
Can be U-shaped groove, as shown in Figure 2 d.Additionally, described groove can also e.g. ∑ shape
Groove, as shown in Figure 3.
According to a kind of embodiment, described body layer 230 is suitable for use as the source of PMOS transistor
Pole or drain electrode.In this case, can have, on described cap layers 240, the electricity comprising nisiloy to connect
Contact layer.Described electric contacting layer is such as used for connecting source/drain region and metal (such as tungsten) electricity
Pole.
According to the present embodiment, owing to containing boron in cap layers 240, the therefore formation speed of cap layers 240
Degree is accelerated, enabling improve the unit interval volume of production of semiconductor device.
Further, owing to cap layers 240 containing the boron element being provided with hole, therefore carrier
Concentration increases.In the case of forming nisiloy in cap layers 240, boron element can reduce cap layers 240
And the contact resistivity between nisiloy layer, thus obtain more preferable electrical contact performance.
Referring to Fig. 2 a～2d describe according to the present embodiment for manufacturing half shown in Fig. 2 d
The illustrative methods of conductor device.
As shown in Figure 2 a, in silicon substrate 200, groove 210 is first formed.Can be by utilizing
Mask and photoresist are etched forming described groove 210.Recessed owing to being formed in a silicon substrate
The step of groove is well known to those skilled in the art, does not repeats them here.
As shown in Figure 2 b, the inculating crystal layer comprising silicon is formed in the bottom of the groove 210 formed
220.Described inculating crystal layer 220 can be formed by epitaxial growth.Silicon or silicon is comprised owing to being formed
The step of the inculating crystal layer of germanium is well known to those skilled in the art, does not repeats them here.
As shown in Figure 2 c, in described groove 210, on described inculating crystal layer 220, growth is wrapped
Body layer 230 containing SiGe.More specifically, described body layer 230 is to pass through selective epitaxial growth
Formed.Process gas for described selective epitaxial growth such as can comprise such as
SiH4Or SiH2Cl2Etc (DCS) silicon source gas, and described process gas such as may be used
Comprise such as GeH4Etc ge source gas, and hydrogen.Also comprise at described body layer 230
In the case of boron element, described process gas can also comprise such as BH3、B2H6、BF3Or
BCl3Etc boron source gas, its flow velocity can be such as 1sccm to 1000sccm.Described
The technological temperature of selective epitaxial growth can be such as 500 DEG C to 800 DEG C, operation pressure example
As can be 1Torr to 500Torr.Additionally, in described selective epitaxial growth, institute
State silicon source gas (such as SiH4Or SiH2Cl2) and ge source gas (such as GeH4) flow velocity example
As being 1sccm to 1000sccm, the flow velocity of described hydrogen for example, 0.1slm is extremely
50slm.According to a kind of embodiment, described process gas can also comprise HCl gas, institute
State the flow velocity for example, 1sccm to 1000sccm of HCl gas.
As shown in Figure 2 d, described body layer 230 forms cap layers 240.As it has been described above, this
Invention first embodiment is characterised by, containing boron (B) element in described cap layers 240.Institute
State cap layers 240 to be formed by epitaxial growth.This epitaxially grown process gas is the most permissible
Comprise such as BH3、B2H6、BF3Or BCl3Etc boron source gas, such as SiH4Or
SiH2Cl2Etc carbon-source gas, and hydrogen.Above-mentioned each gas for forming body layer 230
The numerical range of rate of flow of fluid is equally applicable to be formed the process gas of cap layers 240.
The top of described cap layers 240 can be formed to flush with the surface of substrate 200, it is possible to quilt
Be formed as the surface higher than substrate 200.
Although being shown without in the drawings, between inculating crystal layer 220 and body layer 230 and at body layer
Gradient layer can be formed between 230 and cap layers 240.Described gradient layer can be as germanium between each layer
The transition zone that content gradually changes.
Owing to cap layers 240 containing boron element, silicon source gas therefore can be reduced (such as SiH4
Or SiH2Cl2) activation energy that decomposes, thus improve decomposition rate.As a result, cap layers 240
Formation speed is accelerated, it is possible to increase the unit interval volume of production of semiconductor device.
Method according to the present embodiment can also include: is formed in cap layers 240 and comprises nisiloy
Electric contacting layer.More specifically, (such as, deposition) nickel dam can be formed in cap layers 240, logical
Cross the pasc reaction in nickel dam and cap layers and generate nisiloy.
It is as noted previously, as in cap layers 240 containing the boron element being provided with hole, therefore carrier
Concentration increases.In the case of forming nisiloy in cap layers 240, boron element can reduce cap layers and nickel
Contact resistivity between silicon layer, thus obtain more preferable electrical contact performance.
Second embodiment
Referring now to Fig. 2 a to 2d and Fig. 3, the second embodiment of the present invention and change thereof are described
Type.
As shown in Figure 2 d, semiconductor device according to the second embodiment of the present invention includes: silicon
Substrate 200, is formed with groove in described silicon substrate；Inculating crystal layer 220, comprises silicon and shape
Become on the bottom of described groove；Body layer 230, comprises carborundum (SiC) and is formed at
In described groove on described inculating crystal layer 220；And cap layers 240, comprise silicon and be formed at
On described body layer 230.Second embodiment of the invention is characterised by, contains in described cap layers 240
There is at least one in phosphorus (P) element and arsenic (As) element.Described P elements and/or arsenogen
Element such as can be to have the form of simple substance, it is possible to have the form of compound.Preferably, institute
The concentration summation stating the P elements in cap layers and arsenic element is 1 × 1018Atom/cm3To 5 × 1020
Atom/cm3。
According to a kind of embodiment, described inculating crystal layer 220 can also comprise carbon.That is, institute
State cap layers 220 and can comprise carborundum.
According to a kind of embodiment, described cap layers 240 can also comprise carbon.That is, described
Cap layers 240 can comprise carborundum.
The atomic percent of the carbon in inculating crystal layer 220 can be such as 0～20%, body layer 230
In the atomic percent of carbon can be such as 15%～40%, and the atom hundred of the carbon in cap layers
Proportion by subtraction can be such as 0～20%.
Described groove can have suitable shape according to concrete application.Such as, described groove
Can be U-shaped groove, as shown in Figure 2 d.Additionally, described groove can also e.g. ∑ shape
Groove, as shown in Figure 3.
According to a kind of embodiment, described body layer 230 is suitable for use as the source of nmos pass transistor
Pole or drain electrode (such as, the source/drain of lifting).In this case, described cap layers 240
On can have the electric contacting layer comprising nisiloy.Described electric contacting layer is such as used for connecting source/drain
Region and metal (such as tungsten) electrode.
According to the present embodiment, owing to cap layers 240 containing phosphorus and/or arsenic, therefore cap layers 240
Formation speed accelerate, enabling improve semiconductor device unit interval volume of production.
Further, owing to cap layers 240 containing phosphorus and/or the arsenic element being provided with electronics, because of
This carrier concentration increases.In the case of cap layers 240 forms nisiloy, phosphorus and/or arsenogen
Element can reduce the contact resistivity between cap layers 240 and nisiloy layer, thus obtain more preferable electricity and connect
Touch performance.
Referring to Fig. 2 a～2d describe according to the present embodiment for manufacturing half shown in Fig. 2 d
The illustrative methods of conductor device.
As shown in Figure 2 a, in silicon substrate 200, groove 210 is first formed.Can be by utilizing
Mask and photoresist are etched forming described groove 210.Recessed owing to being formed in a silicon substrate
The step of groove is well known to those skilled in the art, does not repeats them here.
As shown in Figure 2 b, the inculating crystal layer comprising silicon is formed in the bottom of the groove 210 formed
220.Described inculating crystal layer 220 can be formed by epitaxial growth.Silicon or carbon is comprised owing to being formed
The step of the inculating crystal layer of SiClx is well known to those skilled in the art, does not repeats them here.
As shown in Figure 2 c, in described groove 210, on described inculating crystal layer 220, growth is wrapped
The body layer 230 of silicon carbide-containing.More specifically, described body layer 230 is raw by selective epitaxial
Length is formed.Process gas for described selective epitaxial growth such as can comprise such as
SiH4Or SiH2Cl2Etc (DCS) silicon source gas, and described process gas such as may be used
Comprise such as CH4、CH3Cl、CH2Cl2Or CHCl3Etc carbon-source gas, Yi Jiqing
Gas.The technological temperature of described selective epitaxial growth can be such as 400 DEG C to 800 DEG C, work
Skill pressure can be such as 1Torr to 500Torr.Additionally, it is raw at described selective epitaxial
In length, described silicon source gas is (such as SiH4Or SiH2Cl2) flow velocity can be such as 1sccm
To 1000sccm, described carbon-source gas is (such as CH4、CH3Cl、CH2Cl2Or CHCl3)
Flow velocity can be such as 5sccm to 50sccm, the flow velocity of described hydrogen for example, 0.1slm
To 50slm.According to a kind of embodiment, described process gas can also comprise HCl gas,
The flow velocity for example, 1sccm to 1000sccm of described HCl gas.
As shown in Figure 2 d, described body layer 230 forms cap layers 240.As it has been described above, this
Invention first embodiment is characterised by, containing phosphorus (P) element and arsenic in described cap layers 240
(As) at least one in element.Described cap layers 240 can be formed by epitaxial growth.
This epitaxially grown process gas such as can comprise such as PH3Etc phosphorus source gas and/or
Such as AsH3Etc arsenic source gas, such as SiH4Or SiH2Cl2Etc silicon source gas,
And hydrogen.The numerical range of above-mentioned each gas flow rate for forming body layer 230 is the most applicable
In the process gas forming cap layers 240.
The top of described cap layers 240 can be formed to flush with the surface of substrate 200, it is possible to quilt
Be formed as the surface higher than substrate 200.
Although being shown without in the drawings, between inculating crystal layer 220 and body layer 230 and at body layer
Gradient layer can be formed between 230 and cap layers 240.Described gradient layer can be as carbon between each layer
The transition zone that content gradually changes.
Owing to cap layers 240 containing phosphorus and/or arsenic element, silicon source gas therefore can be reduced
(such as SiH4Or SiH2Cl2) activation energy that decomposes, thus improve decomposition rate.As a result, cap
The formation speed of layer 240 is accelerated, it is possible to increase the unit interval volume of production of semiconductor device.
Method according to the present embodiment can also include: is formed in cap layers 240 and comprises nisiloy
Electric contacting layer.More specifically, (such as, deposition) nickel dam can be formed in cap layers 240, logical
Cross the pasc reaction in nickel dam and cap layers and generate nisiloy.
It is as noted previously, as in cap layers 240 and contains phosphorus and/or the arsenic element being provided with electronics, because of
This carrier concentration increases.In the case of cap layers 240 forms nisiloy, phosphorus and/or arsenogen
Element can reduce the contact resistivity between cap layers and nisiloy layer, thus obtains more preferable electrical contact
Energy.
So far, multiple possible embodiment according to the present invention is described in detail.In order to avoid
Cover the design of the present invention, do not describe details more known in the field.People in the art
Member is as described above, complete it can be appreciated how implement technical scheme disclosed herein.
Although some specific embodiments of the present invention being described in detail by example,
But it should be appreciated by those skilled in the art, above example is not merely to illustrate, and not
It is to limit the scope of the present invention.It should be appreciated by those skilled in the art, can without departing from
In the case of scope and spirit of the present invention, above example is modified.The model of the present invention
Enclose and be defined by the following claims.
Claims (12)
1. a method, semi-conductor device manufacturing method, including:
Form groove in a silicon substrate；
The inculating crystal layer comprising silicon is formed in the bottom of described groove；
In described groove, on described inculating crystal layer, growth comprises the body layer of SiGe；
By being epitaxially-formed the cap layers comprising SiGe, wherein process gas on described body layer
Comprise BH3、B2H6、BF3And BCl3In at least one, SiH4And SiH2Cl2In extremely
Few one and hydrogen, the cap layers formed in it comprises boron；
Described cap layers is formed nickel dam；And
The electric contacting layer comprising nisiloy is formed by the reaction of nickel dam with described cap layers.
2. the method for claim 1, wherein
Described body layer is formed by selective epitaxial growth, wherein for described body layer
Epitaxially grown process gas comprises SiH4Or SiH2Cl2, and described process gas comprises
GeH4And hydrogen.
3. method as claimed in claim 2, wherein
The described epitaxially grown process gas for described body layer also comprises BH3、B2H6、
BF3And BCl3In at least one.
4. method as claimed in claim 2, wherein
The technological temperature of described selective epitaxial growth is 500 DEG C to 800 DEG C, and operation pressure is
1Torr to 500Torr.
5. method as claimed in claim 2, wherein
Described SiH4Or SiH2Cl2And GeH4Flow velocity be 1sccm to 1000sccm, institute
The flow velocity stating hydrogen is 0.1slm to 50slm.
6. method as claimed in claim 3, wherein
Described BH3、B2H6、BF3And BCl3In the flow velocity of at least one be 1sccm extremely
1000sccm。
7. the method for claim 1, the concentration of the boron in wherein said cap layers is
1×1018Atom/cm3To 5 × 1020Atom/cm3。
8. a method, semi-conductor device manufacturing method, including:
Form groove in a silicon substrate；
The inculating crystal layer comprising silicon is formed in the bottom of described groove；
On described inculating crystal layer, the body layer comprising carborundum is formed in described groove；And
By being epitaxially-formed the cap layers comprising carborundum on described body layer, wherein for institute
State epitaxially grown process gas and comprise AsH3And PH3In at least one, SiH4With
SiH2Cl2In at least one and hydrogen, wherein said cap layers comprises in phosphorus and arsenic accordingly
At least one；
Described cap layers is formed nickel dam；And
The electric contacting layer comprising nisiloy is formed by the reaction of nickel dam with described cap layers.
9. method as claimed in claim 8, wherein
Described body layer is formed by selective epitaxial growth, wherein for described body layer
Epitaxially grown process gas comprises SiH4Or SiH2Cl2, and described process gas comprises
CH4、CH3Cl、CH2Cl2And CHCl3In at least one, and hydrogen.
10. method as claimed in claim 9, wherein
The technological temperature of described selective epitaxial growth is 400 DEG C to 800 DEG C, and operation pressure is
1Torr to 500Torr.
11. methods as claimed in claim 9, wherein
Described SiH4Or SiH2Cl2Flow velocity be 1sccm to 1000sccm, described CH4、
CH3Cl、CH2Cl2And CHCl3In the flow velocity of at least one be 5sccm to 50sccm,
The flow velocity of described hydrogen is 0.1slm to 50slm.
12. methods as claimed in claim 8, the phosphorus in wherein said cap layers and the concentration of arsenic
Summation is 1 × 1018Atom/cm3To 5 × 1020Atom/cm3。
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| US20230223257A1 (en) * | 2022-01-12 | 2023-07-13 | Applied Materials, Inc. | Methods of epitaxially growing boron-containing structures |
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| CN100499024C (en) * | 2005-12-22 | 2009-06-10 | 台湾积体电路制造股份有限公司 | Method for manufacturing semiconductor device |
| CN100524826C (en) * | 2006-06-09 | 2009-08-05 | 国际商业机器公司 | Semiconductor structure with stressor channel and its forming method |
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