CN103163744A - Novel organic photoresist stripper and preparation process thereof - Google Patents
Novel organic photoresist stripper and preparation process thereof Download PDFInfo
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- CN103163744A CN103163744A CN2011104208024A CN201110420802A CN103163744A CN 103163744 A CN103163744 A CN 103163744A CN 2011104208024 A CN2011104208024 A CN 2011104208024A CN 201110420802 A CN201110420802 A CN 201110420802A CN 103163744 A CN103163744 A CN 103163744A
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Abstract
The invention discloses a novel organic photoresist stripper and a preparation process thereof. The novel organic photoresist stripper comprises an organic solvent, organic amine and a surfactant. The preparation process for the stripper comprises the following steps: maintaining a rotation speed of a stirrer in a material blending tank at a normal temperature and a normal pressure; successively adding the organic solvent, organic amine and the surfactant into the material blending tank; carrying out full stirring; and allowing an obtained mixture to enter into a filter for filtration so as to prepare a finished product. The stripper prepared in the invention has small granularity and high purity, enables no impurity to be left on the surface of a substrate after stripping of a photoresist, can fully and uniformly contacts with the surface of the photoresist, especially with deep holes of a pattern, allows a stripping rate of the surface of the substrate to be controllable and is applicable to stripping of photoresists on surfaces of different metal layers; stripping of the photoresist poses no damage to an aluminum layer, so a yield rate of a product is guaranteed.
Description
Technical field
The chemistry that the present invention relates to a kind of metal material removes photoresist with composition and preparation technology thereof, is specifically related to a kind of novel organic photoresist stripper and preparation technology.
Background technology
Peel off is with materials'use chemical reaction or physical dissolution effect and remove the technology of photoresist.Lift-off technology is divided into that wet method is removed photoresist and dry method is removed photoresist, and wherein, it is to adopt chemical reagent that wet method is removed photoresist, and reaches via physical dissolution or chemical reaction photoresist the purpose of peeling off.Stripper is colourless transparent liquid, in the prior art, (industries such as TFT～LCD), light emitting diode (LED), Organic Light Emitting Diode (OLED) mainly adopt as the removal of photoresist in the panel process stripper of being made by the chemical reagent of the danger such as fluoride and hydrogen peroxide to the Thin Film Transistor (TFT) liquid crystal display, but there is following shortcoming in above-mentioned stripper: detachment rate is difficult to control, the different metal layer to peel off effect variant, substrate after stripper is processed has residual, affects the yield of product; Stripper is undesirable to the photoresist lift off effect at figure deep hole place; Affect the chemical reagent such as the fluoride of product and hydrogen peroxide staff's safe operation is brought certain threat.
A kind of photoresist lift off liquid is disclosed in Chinese patent 200810011907.2, the component that wherein contains is surfactant 1～15%, organic amine 5～4%, organic solvent 5～30%, sequestrant 0.1～5%, corrosion inhibiter 0.01～5%, surplus is water, the composition of this remover composition is more, complicated process of preparation, production cost is higher.
In recent years, people are to the ever-increasing while of the demand of liquid crystal display, quality and picture precision to product are also had higher requirement, and the good difference of peeling off effect can directly cause the quality of circuit board manufacturing process, affect precision and the quality of high density thin wire image.If satisfy people to the requirements at the higher level of the precision of images and quality proposition, those skilled in the art make further improvement with regard to being necessary to the correlation technique of existing stripper.
Summary of the invention
One of purpose of the present invention is to overcome the deficiency in existing stripper technology, designs that a kind of composition is simple, stripping photoresist is respond well, lower-cost novel organic photoresist stripper allocation plan.
Second purpose of the present invention is to overcome the deficiency in existing stripper preparation technology, designs a kind of succinct, rational novel organic photoresist stripper preparation technology.
For achieving the above object, the novel organic photoresist stripper of technical scheme of the present invention comprises organic solvent, monoethanolamine and surfactant, and each weight percentages of components of described organic photoresist stripper is respectively: organic solvent 48%～70%, organic amine 28%～50%, surfactant 0.001%～3%.
Wherein, described organic solvent is water-miscible organic solvent, and described surfactant is anionic surfactant, and described organic amine is monoethanolamine.
Wherein, described containing water-soluble organic solvent is dimethyl sulfoxide (DMSO) or dimethyl formamide.
Wherein, described anionic surfactant is at least a in lauric acid sodium sulphate, dioctyl sodium sulfosuccinate, neopelex and sodium hexadecyl sulfate.
Wherein, in described organic photoresist stripper not the dissolved impurity granularity be no more than 100 greater than the granule number of 0.3 μ m, the impurity negative ion is no more than 1ppb, impurity cationic is no more than 50ppb.
Technical scheme of the present invention also comprises the preparation technology who designs a kind of organic photoresist stripper, it is characterized in that, described preparation technology comprises following procedure of processing:
The first step: with organic solvent, organic amine and surfactant by the configuration of weighing of the described proportioning of claim 1;
Second step: organic solvent is added in material-compound tank, add organic amine under stirring, stir;
The 3rd step: add surfactant in the potpourri of the organic solvent of mixing and organic amine, fully stirring;
The 4th step: potpourri is passed in filtrator filter, obtain described organic photoresist stripper.
Wherein, the microfiltration membranes aperture of described filtrator is 0.05～0.15 μ m.
Wherein, described filtration granularity in air is no more than greater than the particle of 0.5 μ m in hundred grades of environment purifications of 100 and carries out.
Wherein, described stirring is mechanical raking or magnetic agitation, and the speed of stirring is 60～85 rev/mins.
Wherein, described stirring is to carry out under the state of normal temperature, normal pressure with filtering.
Advantage of the present invention and beneficial effect are: the stripper purity that organic solvent, organic amine and surfactant form is high, granularity is little, and the substrate surface inclusion-free after stripping photoresist is residual; Can with photoresist surface especially figure deep hole fully and uniform contact; Make the detachment rate of substrate surface controlled, be applicable to peeling off of different metal layer photomask surface glue; The operation of stripping photoresist has guaranteed the yield of product to the aluminium lamination not damaged.
Embodiment
Below in conjunction with embodiment, the specific embodiment of the present invention is further described.Following examples only are used for technical scheme of the present invention more clearly is described, and can not limit protection scope of the present invention with this.
Embodiment 1
(1) novel organic photoresist stripper forms and preparation
Novel organic photoresist stripper comprises organic solvent, organic amine and surfactant, and each weight percentages of components of organic photoresist stripper is respectively: organic solvent 50%, organic amine 49.999%, surfactant 0.001%.
Wherein, described organic solvent is water-miscible organic solvent, and described surfactant is anionic surfactant, and described organic amine is monoethanolamine.
Wherein, described containing water-soluble organic solvent is dimethyl formamide.
Wherein, described anionic surfactant is lauric acid sodium sulphate.
Wherein, in described organic photoresist stripper not the dissolved impurity granularity be 80 greater than the particle of 0.3 μ m, the impurity negative ion is 0.8ppb, impurity cationic is 30ppb.
The preparation technology of above-mentioned novel organic photoresist stripper comprises following procedure of processing:
The first step: with organic solvent, organic amine and surfactant by the said ratio configuration of weighing;
Second step: organic solvent is added in material-compound tank, add organic amine under stirring, stir;
The 3rd step: add surfactant in the potpourri of the organic solvent of mixing and organic amine, fully stirring;
The 4th step: potpourri is passed in filtrator filter, obtain described organic photoresist stripper.
Wherein, the microfiltration membranes aperture of described filtrator is 0.05～0.15 μ m.
Wherein, described filtration granularity in air is no more than greater than the particle of 0.5 μ m in hundred grades of environment purifications of 100 and carries out.
Wherein, described stirring is mechanical raking, and the speed of stirring is 60 rev/mins.
Wherein, described stirring is to carry out under the state of normal temperature, normal pressure with filtering.
(2) strip operation
To be impregnated into the substrate of photoresist in above-mentioned photoresist lift off liquid, exfoliation temperature is 25 ℃, and splitting time is 10 minutes, after substrate is taken out from stripper, with ultrapure water rinsing 3 minutes, uses at last high pure nitrogen dry.
(3) peel results
With the substrate after peeling off under the observation of sweep electron microscope (SEM), the substrate surface noresidue, to backing material and metal wiring without corrosion.Experimental results show that this stripper can peel off photoresist and the residue on substrate fast.
Embodiment 2
Novel organic photoresist stripper comprises organic solvent, organic amine and surfactant, and each weight percentages of components of organic photoresist stripper is respectively: organic solvent 60%, organic amine 39.99%, surfactant 0.01%.
Wherein, described organic solvent is water-miscible organic solvent, and described surfactant is anionic surfactant, and described organic amine is monoethanolamine.
Wherein, described containing water-soluble organic solvent is dimethyl sulfoxide (DMSO).
Wherein, described anionic surfactant is the dioctyl sodium sulfosuccinate.
Wherein, in described organic photoresist stripper not the dissolved impurity granularity be 70 greater than the particle of 0.3 μ m, the impurity negative ion is 0.7ppb, impurity cationic is 40ppb.
The preparation of stripper is with embodiment 1, and difference is, stirs to be that mechanical raking, the speed of stirring are 85 rev/mins.
Strip operation and peel results are with embodiment 1.
Embodiment 3
Novel organic photoresist stripper comprises organic solvent, organic amine and surfactant, and each weight percentages of components of organic photoresist stripper is respectively: organic solvent 70%, organic amine 29%, surfactant 1%.
Wherein, described organic solvent is water-miscible organic solvent, and described surfactant is anionic surfactant, and described organic amine is monoethanolamine.
Wherein, described containing water-soluble organic solvent is dimethyl formamide.
Wherein, described anionic surfactant is neopelex.
Wherein, in described organic photoresist stripper not the dissolved impurity granularity be 65 greater than the particle of 0.3 μ m, the impurity negative ion is 0.56ppb, impurity cationic is 45ppb.
The preparation of stripper is with embodiment 1, and difference is, stirs to be that magnetic agitation, the speed of stirring are 70 rev/mins.
Strip operation and peel results are with embodiment 1.
Embodiment 4
Novel organic photoresist stripper comprises organic solvent, organic amine and surfactant, and each weight percentages of components of organic photoresist stripper is respectively: organic solvent 65%, organic amine 32%, surfactant 3%.
Wherein, described organic solvent is water-miscible organic solvent, and described surfactant is anionic surfactant, and described organic amine is monoethanolamine.
Wherein, described containing water-soluble organic solvent is dimethyl sulfoxide (DMSO).
Wherein, described anionic surfactant is sodium hexadecyl sulfate.
Wherein, in described organic photoresist stripper not the dissolved impurity granularity be 70 greater than the particle of 0.3 μ m, the impurity negative ion is 0.7ppb, impurity cationic is 40ppb.
The preparation of stripper is with embodiment 1, and difference is, stirs to be that magnetic agitation, the speed of stirring are 80 rev/mins.
Strip operation and peel results are with embodiment 1.
The novel organic photoresist stripper that above-described embodiment is made, the physical and chemical performance index of its raw material is as follows through checking:
When the concentration of monoethanolamine was 99.9%, its physical and chemical performance index was as follows:
1.1 physical characteristics
| Characteristic | Q/320281-A-37 |
| Content (%) | 99.9 |
| Particle (〉=0.5um, individual/ml) | ≤100 |
| Colourity (Hazen) | ≤10 |
| Volatile acid (in HAC); PPm | ≤10 |
1.2 trace impurity content
| Impurity ppb max | Q/320281-A-37 |
| Calcium (Ca) | 100 |
| Cadmium (Cd) | 100 |
| Cobalt (Co) | 100 |
| Copper (Cu) | 20 |
| Iron (Fe) | 100 |
| Potassium (K) | 100 |
| Magnesium (Mg) | 20 |
| Manganese (Mn) | 10 |
| Sodium (Na) | 100 |
| Nickel (Ni) | 50 |
| Plumbous (Pb) | 20 |
| Zinc (Zn) | 100 |
The above is only the preferred embodiment of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the technology of the present invention principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. novel organic photoresist stripper, it is characterized in that, described organic photoresist stripper comprises organic solvent, monoethanolamine and surfactant, and each weight percentages of components of described organic photoresist stripper is respectively: organic solvent 48%～70%, organic amine 28%～50%, surfactant 0.001%～3%.
2. photoresist lift off liquid as claimed in claim 1, is characterized in that, described organic solvent is water-miscible organic solvent, and described surfactant is anionic surfactant, and described organic amine is monoethanolamine.
3. photoresist lift off liquid as claimed in claim 2, is characterized in that, described containing water-soluble organic solvent is dimethyl sulfoxide (DMSO) or dimethyl formamide.
4. photoresist lift off liquid as claimed in claim 3, is characterized in that, described anionic surfactant is at least a in lauric acid sodium sulphate, dioctyl sodium sulfosuccinate, neopelex and sodium hexadecyl sulfate.
5. photoresist lift off liquid as claimed in claim 4, is characterized in that, in described organic photoresist stripper not the dissolved impurity granularity be no more than 100 greater than the granule number of 0.3 μ m, the impurity negative ion is no more than 1ppb, impurity cationic is no more than 50ppb.
6. the preparation technology of a novel organic photoresist stripper, is characterized in that, described preparation technology comprises following procedure of processing:
The first step: with organic solvent, organic amine and surfactant by the configuration of weighing of the described proportioning of claim 1;
Second step: organic solvent is added in material-compound tank, add organic amine under stirring, stir;
The 3rd step: add surfactant in the potpourri of the organic solvent of mixing and organic amine, fully stirring;
The 4th step: potpourri is passed in filtrator filter, obtain described organic photoresist stripper.
7. the preparation technology of photoresist lift off liquid as claimed in claim 6, is characterized in that, the microfiltration membranes aperture of described filtrator is 0.05～0.15 μ m.
8. the preparation technology of photoresist lift off liquid as claimed in claim 7, is characterized in that, described filtration granularity in air is no more than greater than the particle of 0.5 μ m in hundred grades of environment purifications of 100 carries out.
9. the preparation technology of photoresist lift off liquid as claimed in claim 8, is characterized in that, described stirring is mechanical raking or magnetic agitation, and the speed of stirring is 60～85 rev/mins.
10. the preparation technology of photoresist lift off liquid as claimed in claim 9, is characterized in that, described stirring is to carry out under the state of normal temperature, normal pressure with filtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011104208024A CN103163744A (en) | 2011-12-16 | 2011-12-16 | Novel organic photoresist stripper and preparation process thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011104208024A CN103163744A (en) | 2011-12-16 | 2011-12-16 | Novel organic photoresist stripper and preparation process thereof |
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| CN103163744A true CN103163744A (en) | 2013-06-19 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103995441A (en) * | 2014-06-11 | 2014-08-20 | 深圳市华星光电技术有限公司 | Light resistance stripping method and light resistance stripping device |
| CN107153329A (en) * | 2017-06-19 | 2017-09-12 | 江阴润玛电子材料股份有限公司 | TFT industries copper wiring high-recovery environment-friendly type stripper |
| CN114509927A (en) * | 2021-11-24 | 2022-05-17 | 福建中安高新材料研究院有限公司 | Photoresist stripping liquid and preparation method and application method thereof |
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| CN1197113A (en) * | 1997-01-09 | 1998-10-28 | 花王株式会社 | Detergent composition for removing resinous stains |
| CN1866470A (en) * | 2005-05-19 | 2006-11-22 | 中华映管股份有限公司 | Method for forming patterned material layer |
| CN101295144A (en) * | 2008-06-19 | 2008-10-29 | 大连三达奥克化学股份有限公司 | Photoresist stripping liquid |
| CN101371195A (en) * | 2006-01-12 | 2009-02-18 | 东丽株式会社 | Photosensitive composition, display member, and process for producing the same |
| CN102141743A (en) * | 2010-08-25 | 2011-08-03 | 上海飞凯光电材料股份有限公司 | Photoresist peeling solution composition with metal protection |
| CN102147576A (en) * | 2010-02-09 | 2011-08-10 | 京东方科技集团股份有限公司 | Photoresist stripping liquid composite |
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2011
- 2011-12-16 CN CN2011104208024A patent/CN103163744A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1197113A (en) * | 1997-01-09 | 1998-10-28 | 花王株式会社 | Detergent composition for removing resinous stains |
| CN1866470A (en) * | 2005-05-19 | 2006-11-22 | 中华映管股份有限公司 | Method for forming patterned material layer |
| CN101371195A (en) * | 2006-01-12 | 2009-02-18 | 东丽株式会社 | Photosensitive composition, display member, and process for producing the same |
| CN101295144A (en) * | 2008-06-19 | 2008-10-29 | 大连三达奥克化学股份有限公司 | Photoresist stripping liquid |
| CN102147576A (en) * | 2010-02-09 | 2011-08-10 | 京东方科技集团股份有限公司 | Photoresist stripping liquid composite |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103995441A (en) * | 2014-06-11 | 2014-08-20 | 深圳市华星光电技术有限公司 | Light resistance stripping method and light resistance stripping device |
| CN103995441B (en) * | 2014-06-11 | 2019-05-31 | 深圳市华星光电技术有限公司 | Photoresistive striping process and optical resistance-stripping device |
| CN107153329A (en) * | 2017-06-19 | 2017-09-12 | 江阴润玛电子材料股份有限公司 | TFT industries copper wiring high-recovery environment-friendly type stripper |
| CN114509927A (en) * | 2021-11-24 | 2022-05-17 | 福建中安高新材料研究院有限公司 | Photoresist stripping liquid and preparation method and application method thereof |
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Application publication date: 20130619 |