CN103149741A - Filter layer substrate and display device - Google Patents

Filter layer substrate and display device Download PDF

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Publication number
CN103149741A
CN103149741A CN2011104031645A CN201110403164A CN103149741A CN 103149741 A CN103149741 A CN 103149741A CN 2011104031645 A CN2011104031645 A CN 2011104031645A CN 201110403164 A CN201110403164 A CN 201110403164A CN 103149741 A CN103149741 A CN 103149741A
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CN
China
Prior art keywords
photoresistance sept
filter layer
substrate
sept
photoresistance
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CN2011104031645A
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Chinese (zh)
Inventor
梁志明
庄国良
陈淑兰
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Innocom Technology Shenzhen Co Ltd
Innolux Shenzhen Co Ltd
Chi Mei Optoelectronics Corp
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Innolux Shenzhen Co Ltd
Chi Mei Optoelectronics Corp
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Application filed by Innolux Shenzhen Co Ltd, Chi Mei Optoelectronics Corp filed Critical Innolux Shenzhen Co Ltd
Priority to CN2011104031645A priority Critical patent/CN103149741A/en
Publication of CN103149741A publication Critical patent/CN103149741A/en
Pending legal-status Critical Current

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Abstract

The invention relates to a filter layer substrate, which comprises a transparent substrate, a black matrix layer, a filter layer, a protective layer, a first photoresist spacer and a second photoresist spacer, wherein the black matrix layer is arranged on the transparent substrate, and the filter layer is arranged on the transparent substrate and the black matrix layer; the protective layer covers the filter layer, and the first photoresist space corresponding to the filter layer is arranged on the protective layer; and the second photresist spacer corresponding to the filter layer is arranged on the protective layer, and the bottom of the first photoresist space and the bottom of the second photoresist have a height difference. The invention also discloses a display device. The allowable range of the liquid crystal filling amount is larger, and the problems of a display panel caused by stress, touch or vibration are solved.

Description

Filter layer substrate and display device
Technical field
The present invention is about a kind of substrate and device, especially in regard to a kind of filter layer substrate and display device.
Background technology
Along with the development of lcd technology is more and more ripe, make liquid crystal indicator be widely used in various information products, for example notebook computer, personal digital assistant, Smartphone, or on the portable type information products such as panel computer.The main element of liquid crystal indicator comprises display panels, and display panels comprises a thin film transistor base plate, an optical filtering substrate and be arranged at thin film transistor base plate and optical filtering substrate between a liquid crystal layer.Wherein, thin film transistor base plate and optical filtering substrate are kept gap between two substrates via frame glue and sept (spacer).
Please refer to shown in Figure 1A, it is a kind of cut-open view of known display panels 1.Display panels 1 comprise an optical filtering substrate 11, a thin film transistor base plate 12 and be arranged at optical filtering substrate 11 and thin film transistor base plate 12 between a liquid crystal layer 13.
Optical filtering substrate 11 has a transparent substrates 111, a black-matrix layer BM, a filter layer 112, a protective seam 113.Wherein, black-matrix layer BM, filter layer 112 and protective seam 113 sequentially are formed on transparent substrates 111.Filter layer 112 can have a red optical filtering 112a of section, a green optical filtering 112b of section and a blue optical filtering 112c of section.In addition, sept S 1, S2 are respectively a photoresist, and correspond respectively to black-matrix layer BM, and are arranged on protective seam 113.The display panels 1 of Figure 1A switches (in-plane switch, IPS) formula display panels as example take a plane, therefore, do not have transparency conducting layer on optical filtering substrate 11.But, in other the display panels of vertical suitching type, stable twisted nematic (Twisted Nematic, TN) type display panels for example can have a transparency conducting layer with as common electrode between protective seam 113 and sept S1, S2.In addition, thin film transistor base plate 12 has a transparent substrates 121 and a tft layer 122, and tft layer 122 is arranged at a side of transparent substrates 121.
In addition, existing liquid crystal filling technique commonly used is with liquid crystal drip-injection method (one drop fill, ODF) be main, wherein, the permissible range of the liquid crystal loading of display panels 1 (liquid crystal margin) can directly affect yield and the output of liquid crystal drip-injection method technique.
For the permissible range of the liquid crystal loading that makes display panels 1 is larger, please refer to shown in Figure 1B, its be in Figure 1A sept S1, S2 respectively at the schematic diagram of another angle.Wherein, Figure 1B does not show thin film transistor base plate 12.
In known technology, parting S1, S2 between two differing heights as shown in Figure 1B is set.Wherein, two sept S1, S2 are in the same plane, but because its thickness is not identical, therefore two end faces of two sept S1, S2 have a height difference H, make the permissible range of liquid crystal loading larger, so, can improve yield and the output of liquid crystal drip-injection method technique.
Summary of the invention
Purpose of the present invention has optical filtering substrate and the display device of difference in height for the bottom surface that a kind of two septs are provided, except the permissible range that can make the liquid crystal loading is large, also can avoid display panel to produce the problem of stress because of subsequent technique, the problem that causes in the time of perhaps can avoiding because of external force collision or vibrations.
For reaching above-mentioned purpose, comprise a transparent substrates, a black-matrix layer, a filter layer, a protective seam, one first photoresistance sept and one second photoresistance sept according to a kind of filter layer substrate of the present invention.Black-matrix layer is arranged on transparent substrates.Filter layer is arranged on transparent substrates and black-matrix layer.Protective seam is covered on filter layer.The first photoresistance sept is arranged on protective seam corresponding to filter layer.The second photoresistance sept is arranged on protective seam corresponding to filter layer, and the bottom surface of the bottom surface of the first photoresistance sept and the second photoresistance sept has a difference in height.
In one embodiment, filter layer and black-matrix layer overlap locates to have at least one opening, and protective seam covers filter layer and black-matrix layer, the corresponding opening setting of the second photoresistance sept.
In one embodiment, the first photoresistance sept and the second photoresistance sept protective seam of corresponding different-thickness respectively.
In one embodiment, the first photoresistance sept has in fact identical height with the second photoresistance sept.
In one embodiment, the height of the first photoresistance sept is greater than the height of the second photoresistance sept.
In one embodiment, the bottom surface of the first photoresistance sept refers to that the first photoresistance sept and protective seam link part, and the bottom surface of the second photoresistance sept refers to that the second photoresistance sept and protective seam link part.
For reaching above-mentioned purpose, comprise that according to a kind of display device of the present invention a filter layer substrate and drives substrate.The filter layer substrate has a transparent substrates, a black-matrix layer, a filter layer, a protective seam, one first photoresistance sept and one second photoresistance sept.Black-matrix layer is arranged on transparent substrates.Filter layer is arranged on transparent substrates and black-matrix layer.Protective seam is covered on filter layer.The first photoresistance sept is arranged on protective seam corresponding to filter layer.The second photoresistance sept is arranged on protective seam corresponding to filter layer, and the bottom surface of the bottom surface of the first photoresistance sept and the second photoresistance sept has a difference in height.Drive substrate relative with the filter layer substrate and establish.
In one embodiment, filter layer and black-matrix layer overlapping part have at least one opening, and protective seam covers filter layer and black-matrix layer, the corresponding opening setting of the second photoresistance sept.
In one embodiment, the first photoresistance sept and the second photoresistance sept protective seam of corresponding different-thickness respectively.
In one embodiment, the first photoresistance sept has identical in fact height with the second photoresistance sept.
In one embodiment, the height of the first photoresistance sept is greater than the height of the second photoresistance sept.
In one embodiment, the bottom surface of the first photoresistance sept refers to that the first photoresistance sept and protective seam link part, and the bottom surface of the second photoresistance sept refers to that the second photoresistance sept and protective seam link part.
In one embodiment, display device more comprises a liquid crystal layer, and it is arranged at the filter layer substrate and drives between substrate.
In one embodiment, driving substrate is a thin film transistor base plate or an Organic Light Emitting Diode substrate.
In one embodiment, the Organic Light Emitting Diode substrate has a substrate and an Organic Light Emitting Diode layer, and the Organic Light Emitting Diode layer is arranged at real estate to a side of filter layer substrate.
From the above; because the first photoresistance sept of filter layer substrate of the present invention and display device is arranged on protective seam corresponding to filter layer; the second photoresistance sept is arranged on protective seam corresponding to filter layer, and the bottom surface of the bottom surface of the first photoresistance sept and the second photoresistance sept has a difference in height.By this, can make the end face of the first photoresistance sept and the second photoresistance sept have a difference in height, compare with the display panels that does not have two kinds of height different interval things, can make the permissible range of liquid crystal loading larger, so, can improve yield and the output of liquid crystal drip-injection method technique.In addition, the first photoresistance sept of end face tool difference in height and the setting of the second photoresistance sept can absorb the lateral stress that display panel produces because of subsequent technique, cause display frame light leak or the uneven problem of contrast in the time of also can avoiding because of external force collision or vibrations.
Description of drawings
Figure 1A is a kind of cut-open view of known display panels;
Figure 1B is in Figure 1A, along the cut-open view of straight line A-A and straight line B-B;
Fig. 2 A is the vertical view of a kind of filter layer substrate of preferred embodiment of the present invention;
Fig. 2 B is in Fig. 2 A, the cut-open view of straight line A-A and straight line B-B;
Fig. 3 to Fig. 5 is respectively the schematic diagram of the present invention's filter layer substrate on the other hand; And
Fig. 6 is the schematic diagram of a kind of display device of preferred embodiment of the present invention.
The main element symbol description:
1: display panels
11,2,2a, 2b, 2c: filter layer substrate
111,121,21,42: transparent substrates
112,23,23a: filter layer
112a, 112b, 112c: optical filtering section
113: hyaline layer
12: thin film transistor base plate
122,41: tft layer
13,5: liquid crystal layer
24,24a, 24b: protective seam
3: display device
4: drive substrate
43: substrate
44: the Organic Light Emitting Diode layer
A-A, B-B: straight line
B1, B2: bottom surface
BM, 22: black-matrix layer
H1, h2, h3: thickness
H, H1, H2, H3, H4, H5: difference in height
O: opening
O2, O3: groove
S1: the first photoresistance sept
S2: the second photoresistance sept
T1, T2: end face
Embodiment
Hereinafter with reference to correlative type, a kind of filter layer substrate and display device according to preferred embodiment of the present invention are described, wherein identical element will be illustrated with identical reference marks.
Please be simultaneously with reference to shown in Fig. 2 A and Fig. 2 B, wherein, Fig. 2 A is the vertical view of a kind of filter layer substrate 2 of preferred embodiment of the present invention, and Fig. 2 B is in Fig. 2 A, the cut-open view of straight line A-A and straight line B-B.Wherein, filter layer substrate 2 comprises a substrate 21, a black-matrix layer 22, a filter layer 23, a protective seam 24, one first photoresistance sept S1 and one second photoresistance sept S2.Be clear performance feature of the present invention, Fig. 2 A does not illustrate substrate 21 and protective seam 24.As shown in Fig. 2 B, the display device of the present embodiment is switched (in-plane switch, IPS) formula display device as example to be applied to the plane, therefore, does not have transparency conducting layer on filter layer substrate 2.But; in other the liquid crystal indicator of vertical suitching type; stable twisted nematic (Twisted Nematic, TN) type liquid crystal indicator for example can have a transparency conducting layer with as common electrode between the protective seam 24 on the filter layer substrate and sept S1, S2.
Substrate 21 is the light-permeable material, and surface uniform and smooth, and its material can be for example glass substrate, quartz base plate or plastic substrate.
Black-matrix layer 22 is arranged on substrate 21, and filter layer 23 is arranged on substrate 21 and black-matrix layer 22, and wherein black-matrix layer 22 is light tight material, be for example metal or resin, and metal for example can be chromium, chromium oxide or nitrogen oxygen chromium compound.Because black-matrix layer 22 is light tight material, therefore forms lighttight zone on transparent substrates 21, and then define the zone of light-permeable.In addition, filter layer 23 can comprise a redness, a green and blue optical filtering section, and its material is the light-permeable material, for example can be pigment or dyestuff, and can see through decoration method, Pigments method, print process, dry film method or electricity the modes such as method the optical filtering section of different colours is formed at respectively on transparent substrates 21 and black-matrix layer 22.In this, filter layer 23 is not defined as redness, green or blue.
Protective seam 24 is covered on filter layer 23.Wherein, the material of protective seam 24 can be photoresist or resin material etc., and its production method can comprise rotary coating (spin coating), slit and rotary coating (slit and spin coating) or non-rotating coating modes such as (spinless coating).Do not limited in this.Protective seam 24 use are so that the having an even surface of filter layer 23, and the impact can protect filter layer 23 not made by subsequent technique the time.
The first photoresistance sept S1 is arranged on protective seam 24 corresponding to black-matrix layer 22; and the second photoresistance sept S2 is arranged on protective seam 24 corresponding to black-matrix layer 22; and the bottom surface B2 of the bottom surface B1 of the first photoresistance sept S 1 and the second photoresistance sept S2 has a height difference H 1; when this difference in height refers to a surface level as benchmark, the difference in height of bottom surface B1, B2 residing position.In this, Fig. 2 A take first a photoresistance sept S 1 and three the second photoresistance sept S2 as example, certainly not as limit.Wherein, the first photoresistance sept S1 and the second photoresistance sept S2 can make of photonasty photoresists such as resene, silicates or glass fibre classes, and its production method can for example use the mode of twice light shield, perhaps also can make the first photoresistance sept S1 and the second photoresistance sept S2 with the technology of many gray-level masks.Wherein, many gray-level masks technology can comprise gray scale light shield (gray-tone mask, GTM) and half mode light shield (half-tone mask, HTM) technology.In addition, the section shape of the first photoresistance sept S 1 and the second photoresistance sept S2 is such as can be the columns such as quadrilateral, hexagon, octagon, or can be right cylinder or Elliptic Cylinder, is example in this take section as slightly being trapezoidal column.
Explanation is again, and the bottom surface B1 of the first photoresistance sept S1 refers to that the first photoresistance sept S1 and protective seam 24 link part, and the bottom surface B2 of the second photoresistance sept S2 refers to that the second photoresistance sept S2 and protective seam 24 link part.
In the present embodiment; filter layer 23 and the black-matrix layer 22 overlapping parts of part; filter layer 23 has at least one opening O; namely filter layer 23 in opening O place for disconnecting or having a depression; and protective seam 24 can cover filter layer 23 and black-matrix layer 22 fully, and the second photoresistance sept S2 is arranged corresponding to the opening O of filter layer 23.In this, the second photoresistance sept S2 arranges between the filter layer 23 of part and black-matrix layer 22 has opening O; The first photoresistance sept S 1 arranges between the filter layer 23 of part and black-matrix layer 22 does not have opening O.In this, the thickness of the first photoresistance sept S1 is identical in fact with the thickness of the second photoresistance sept S2.The filter layer 23 that part is set due to the first photoresistance sept S1 does not have opening O, and arranging the filter layer 23 of part, the second photoresistance sept S2 has opening O, therefore, although the thickness h 1 of the first photoresistance sept S1 equates in fact with the thickness h 2 of the second photoresistance sept S2, but, existence due to opening O, therefore make bottom surface B1, the B2 of the first photoresistance sept S1 and the second photoresistance sept S2 have a height difference H 1, and then also make end face T1, the T2 of the first photoresistance sept S 1 and the second photoresistance sept S2 also have a height difference H 2.In this, height difference H 2 equals in fact height difference H 1.
In addition, please refer to shown in Figure 3ly, it is for the schematic diagram of the present invention filter layer substrate 2a on the other hand.
Filter layer substrate 2a and filter layer substrate 2 main differences are: the filter layer 23a that the first photoresistance sept S1 arranges part does not have opening, and the filter layer 23a that the second photoresistance sept S2 arranges part does not also have opening.And bottom surface B1, the B2 of the first photoresistance sept S1 and the second photoresistance sept S2 have difference in height, are that the second photoresistance sept S2 is arranged on the groove O2 of protective seam 24a.In this; the thickness of the protective seam 24a of the first photoresistance sept S1 placement is greater than the thickness of the protective seam 24a of the second photoresistance sept S2 placement; and cause the not identical method of thickness; can utilize lithography process (photo lithography process) to coordinate gray scale light shield or half mode light shield, with the thickness of attenuate protective seam 24a.Therefore, although, the thickness h 1 of the first photoresistance sept S1 of filter layer substrate 2a equates in fact with the thickness h 2 of the second photoresistance sept S2, still, equally can make end face T1, the T2 of the first photoresistance sept S1 and the second photoresistance sept S2 still have height difference H 2.
Moreover, please refer to shown in Figure 4ly, it is the schematic diagram of the filter layer substrate 2b of another aspect of the invention.
Filter layer substrate 2b and filter layer substrate 2 main differences are: protective seam 24b has more a groove O3, and the opening O setting of the corresponding filter layer 23 of groove O3, and the second photoresistance sept S2 correspondence is arranged on groove O3.In this, the thickness of the protective seam 24b of the first photoresistance sept S1 placement is greater than the thickness of the protective seam 24b of the second photoresistance sept S2 placement.Therefore, although, the thickness h 1 of the first photoresistance sept S1 of filter layer substrate 2b equates in fact with the thickness h 2 of the second photoresistance sept S2, but, equally can make end face T1, the T2 of the first photoresistance sept S1 and the second photoresistance sept S2 have a height difference H 4, and height difference H 4 is greater than the height difference H 2 of Fig. 2 and Fig. 3.Wherein, the height difference H 4 of the first photoresistance sept S1 and the second photoresistance sept S2 is larger, and the permissible range of liquid crystal loading is larger, more can promote yield and the output of liquid crystal drip-injection method technique.In addition, height difference H 4 is larger, more can resist the lateral stress that follow-up pad pasting process produces, and causes display frame light leak or the uneven problem of contrast in the time of also more can avoiding because of external force collision or vibrations.
Then, please refer to shown in Figure 5ly, it is the schematic diagram of the filter layer substrate 2c of another aspect of the invention.
Filter layer substrate 2c and filter layer substrate 2b main difference are: the thickness h 1 of the first photoresistance sept S1 is greater than the thickness h 3 of the second photoresistance sept S2, makes between end face T1, the T2 of the first photoresistance sept S1 and the second photoresistance sept S2 to have a larger height difference H 5 (height difference H 5 is greater than height difference H 4).
But, what remind is, the first photoresistance sept S1 of the differing heights of this aspect and the second photoresistance sept S2 can be applicable on the filter layer substrate 2 and 2a of Fig. 2 and Fig. 3, also can make the end face of the first photoresistance sept S1 and the second photoresistance sept S2 have larger difference in height.
In addition, the technical characterictic of filter layer substrate 2a, 2b, other element of 2c can with reference to filter layer substrate 2, repeat no more in this.
Please refer to shown in Figure 6ly, it is the schematic diagram of a kind of display device 3 of preferred embodiment of the present invention.
Display device 3 comprises that a filter layer substrate 2 and drives substrate 4, drives substrate 4 relative with filter layer substrate 2 and establish.Wherein, filter layer substrate 2 comprises a transparent substrates 21, a black-matrix layer 22, a filter layer 23, a protective seam 24, one first photoresistance sept S1 and one second photoresistance sept S2.The technical characterictic of filter layer substrate 2 can be with reference to above-mentioned, and certainly, the technical characterictic of filter layer substrate 2 also can with reference to above-mentioned filter layer substrate 2a, 2b, 2c, repeat no more in this.
If during display device 3 one liquid crystal indicator, drive substrate 4 and can be a thin film transistor base plate.Thin film transistor base plate can have a film transistor matrix 41 and a transparent substrates 42, and film transistor matrix 41 is arranged at transparent substrates 42 towards a side of filter layer substrate 2.In addition, display device 3 more can comprise a liquid crystal layer 5, and liquid crystal layer 5 is arranged at filter layer substrate 2 and drives between substrate 4.
In addition, if display device 3 one organic LED display devices drive substrate 4 and can be an Organic Light Emitting Diode substrate.The Organic Light Emitting Diode substrate can have a substrate 43 and an Organic Light Emitting Diode layer 44, and Organic Light Emitting Diode layer 44 is arranged at substrate 43 towards a side of filter layer substrate 2.
In sum; because the first photoresistance sept of filter layer substrate of the present invention and display device is arranged on protective seam corresponding to black-matrix layer; the second photoresistance sept is arranged on protective seam corresponding to black-matrix layer, and the bottom surface of the bottom surface of the first photoresistance sept and the second photoresistance sept has a difference in height.By this, can make the end face of the first photoresistance sept and the second photoresistance sept have a difference in height, compare with the display panels that does not have two kinds of height different interval things, can make the permissible range of liquid crystal loading larger, so, can improve yield and the output of liquid crystal drip-injection method technique.In addition, the first photoresistance sept of end face tool difference in height and the setting of the second photoresistance sept can absorb the lateral stress that display panel produces because of subsequent technique, cause display frame light leak or the uneven problem of contrast in the time of also can avoiding because of external force collision or vibrations.
The above is only illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and to its equivalent modifications of carrying out or change, all should be contained in claims.

Claims (9)

1. display device comprises:
One filter layer substrate comprises:
One substrate;
One black-matrix layer is arranged on this substrate;
One filter layer is covered on this substrate and this black-matrix layer;
One protective seam is arranged on this filter layer;
One first photoresistance sept is to should black-matrix layer and be arranged on this protective seam; And
One second photoresistance sept, to should black-matrix layer and be arranged on this protective seam, wherein the bottom surface of the bottom surface of this first photoresistance sept and this second photoresistance sept has a difference in height.
2. display device as claimed in claim 1; wherein this filter layer has at least one opening; and this opening is in order to expose the surface of this black-matrix layer; this protective seam covers this filter layer and this black-matrix layer; and to should have a groove by opening part, and this second photoresistance sept correspondence is arranged on this groove.
3. display device as claimed in claim 2, wherein the thickness of identical or this first photoresistance sept of the thickness of this first photoresistance sept and this second photoresistance sept is greater than this second photoresistance sept.
4. display device as claimed in claim 1, wherein this protective seam has a groove, and this second photoresistance sept correspondence is arranged on this groove.
5. display device as claimed in claim 4, wherein this protective seam has one second groove, and this second groove is to should the opening setting, and this second photoresistance sept correspondence is arranged on this second groove.
6. display device as claimed in claim 4, wherein the thickness of this first photoresistance sept is identical with the thickness of this second photoresistance sept, or the thickness of this first photoresistance sept is greater than the thickness of this second photoresistance sept.
7. display device as claimed in claim 1, wherein the bottom surface of this first photoresistance sept refers to that this first photoresistance sept and this protective seam link part, the bottom surface of this second photoresistance sept refers to this second photoresistance sept and this protective seam link part.
8. display device as claimed in claim 1 more comprises:
One drives substrate, relative with this filter layer substrate and establish; And
One liquid crystal layer is arranged between this filter layer substrate and this driving substrate.
9. display device as claimed in claim 8, wherein this driving substrate is a thin film transistor base plate or an Organic Light Emitting Diode substrate.
CN2011104031645A 2011-12-07 2011-12-07 Filter layer substrate and display device Pending CN103149741A (en)

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Application publication date: 20130612