CN103149618B - Light spectrum purification filter device for laser plasma extreme ultraviolet lithography source - Google Patents
Light spectrum purification filter device for laser plasma extreme ultraviolet lithography source Download PDFInfo
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- CN103149618B CN103149618B CN201310093540.4A CN201310093540A CN103149618B CN 103149618 B CN103149618 B CN 103149618B CN 201310093540 A CN201310093540 A CN 201310093540A CN 103149618 B CN103149618 B CN 103149618B
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Abstract
The invention discloses a light spectrum purification filter device for a laser plasma extreme ultraviolet lithography source. The device is characterized by sequentially comprising a first optical grating coated with film on a surface, a thin metal sheet with high transmittance for a light spectrum with 13.5nm, and a second light grating coated with film on the surface, wherein surfaces of the first light grating, the second light grating and the thin metal sheet are mutually parallel, line directions of the first light grating and the second light grating are mutually vertical, a light grating constant is 10-150nm, a duty ratio is 40-60 percent, and the thickness is 1-10mm. The thin metal sheet is made from zirconium or molybdenum, and the thickness is 0.1-5mm. The device has a simple structure, and the light spectrum of laser plasma radiation is enabled to be purified.
Description
Technical field
The present invention relates to extreme ultraviolet photolithographic, particularly a kind of spectrum purifying filter for laser plasma extreme Ultraviolet Lithography Source.
Background technology
Wavelength is the one-tenth Next Generation Lithographies light source that extreme ultraviolet (EUV) light source of 13.5nm ± 1% is generally considered the 193nm that continues, and laser plasma extreme ultraviolet light source (LPP) is especially by various countries scientist common concern.The collection of expectation wave spectrum by the laser beam focus of high power, Gao Zhongying is produced plasma electromagnetic radiation on the tin in drop state or zinc pellet, then focuses in intermediate focus through gatherer, spectrum purifying filter unit by LPP.Due to spectrum in the band that plasma not only gives off 13.5nm ± 1%, be also included in the band external spectrum except spectrum in band.Must adopt spectrum purifying filtering technique that band external spectrum energy is filtered out, the demand of EUV exposure system could be met.
First disclose the pure filtering method of a kind of spectrum in technology 1 " Spectral purity filter; lithographic apertures; and method for manufacturing a spectral purity filter " (United States Patent (USP) 2012/0154778AI), first the method is produced in silicon materials substrate has circular or orthohexagonal grid, and then on grid, plated film realizes spectrum purifying.The method can be greater than 1 μm to wavelength, and the infrared spectrum that especially wavelength is greater than 10 μm carries out strong reflection, and has very high transmitance for the spectrum that wavelength is less than 100nm.
Present technology 1 has higher reflectivity for infrared spectrum, for the deep ultraviolet-visible light wave range DeGrain in the outer wave band of band, must coordinate the pure filtering technique of other spectrum, just can obtain comparatively pure 13.5nm ± 1% spectrum.
Summary of the invention
The object of the invention is to overcome above-mentioned prior art Problems existing, provides a kind of spectrum purifying filter for laser plasma extreme Ultraviolet Lithography Source, and this apparatus structure is simple, makes the spectrum purifying of laser plasma radiation.
Technical solution of the present invention is as follows:
A kind of spectrum purifying filter for laser plasma extreme Ultraviolet Lithography Source, feature is that it forms the first grating comprising surface coating successively, for 13.5nm spectrum, there is the foil of high permeability and the second grating of surface coating, first grating, the surface of foil and the second grating is parallel to each other, first grating and the second grating have identical structure, the first described grating is mutually vertical with the line orientations of the second grating, the grating constant of the first grating and the second grating is 10 ~ 150nm, dutycycle is 40% ~ 60%, thickness is 1 ~ 10mm.
The first described grating and the second grating are fabricated from a silicon, and surface is coated with ZrSi
2or MoSi
2film, has strong reflex to the spectrum being greater than 100nm wavelength.
The first described grating and the grating constant representative value of the second grating are 100nm.
Described foil is made up of zirconium or molybdenum, and thickness is 0.1 ~ 5mm, and extreme ultraviolet spectrum wavelength being less than to 10nm has higher reflectivity.
Advantage of the present invention is:
What 1 the present invention adopted is one-dimensional grating, and technique easily makes, with low cost.
The first grating described in 2 and the surface of the second grating and optical axis included angle are 30 ° ~ 60 °, and the spectral reflectance that wavelength can be greater than 100nm goes out cavity, and reflectance spectrum as detectable signal, can avoid the heat effect to target chamber simultaneously.
3 adopt the first grating, the second grating and foil three to carry out filtering to band external spectrum, reduce the heat load of each device, improve system stability.
Accompanying drawing explanation
Fig. 1 is the relative position relation figure of the first grating 11 of a kind of spectrum purifying filter 18 for laser plasma extreme Ultraviolet Lithography Source of the present invention, foil 12 and the second grating 13
Fig. 2 is the front view of the first grating 11 of the present invention or the second grating 13.
Fig. 3 is for adopting laser plasma photolithography light source structural drawing of the present invention.
Embodiment
Below, the invention will be further described by reference to the accompanying drawings, but should not limit the scope of the invention with this.
First refer to Fig. 3, Fig. 1 is the first grating 11 of a kind of spectrum purifying filter for laser plasma extreme Ultraviolet Lithography Source of the present invention, the relative position relation figure of foil 12 and the second grating 13, as seen from Figure 1, the formation of spectrum purifying filter of the present invention comprises the first grating 11 of surface coating successively, for 13.5nm spectrum, there is the foil 12 of high permeability and the second grating 13 of surface coating, first grating 11 is mutually vertical with the line orientations of the second grating 13, grating constant is 10 ~ 150nm, dutycycle is 40% ~ 60%, thickness is 1 ~ 10mm.
The first described grating 11 and the second grating 13 are fabricated from a silicon, and surface is coated with ZrSi
2or MoSi
2film, spectrum wavelength being greater than to 100nm has strong reflex.
The first described grating 11 and the grating constant representative value of the second grating 13 are 100nm.
Described foil 12 is made up of zirconium or molybdenum, and thickness is 0.1 ~ 5mm, and extreme ultraviolet spectrum wavelength being less than to 10nm has higher reflectivity.
Fig. 2 is the front view of the first grating 11 of the present invention.First grating 11 is identical with the structure of the second grating 13, and physical dimension representative value is 200mm*200mm, and grating constant is 10 ~ 150nm, such as 100nm, and dutycycle is 40% ~ 60%.Described grating adopts silicon materials to make, and made by photoetching process, surface is coated with ZrSi
2or MoSi
2film.
Fig. 3 is for adopting laser plasma photolithography light source structural representation of the present invention.As shown in the figure, parallel with laser plasma photolithography light source optical axis 19 wavelength is high power, the Gao Zhongying CO of 10.6 microns
2laser beam 1, focuses on through condenser 2 in the borne tin droplets 3 in plasma chamber 5 and (is produced by droplet generator, omit in figure).After the focus point of laser beam 1 and borne tin droplets 3 interact, produce high-temperature plasma.The electromagnetic radiation of high-temperature plasma, except being with interior spectrum 10, also comprises extreme ultraviolet-deep ultraviolet-visible band external spectrum 9.Gatherer 4, by all wave band electromagnetic radiation collection, outputs to spectrum purifying filtering vacuum chamber 6 by first window 14, focuses in intermediate focus 17, finally incide lithography illuminating system 7.The spectrum entering spectrum purifying filtering vacuum chamber 6, except spectrum 10 in above-mentioned band external spectrum 9 and band, also comprises the band external spectrum 8 that the wavelength produced by LD pulsed source is 1.06 μm and 10.6 μm.Spectrum purifying filter 18(of the present invention comprises the first grating 11, foil 12 and the second grating 13) be placed in spectrum purifying filtering vacuum chamber 6, the grating surface of the first grating 11 and the second grating 13 and the angle of laser plasma photolithography light source optical axis 19 optical axis are for adjustablely (eliminating for fixing for 30 ° ~ 60 ° in figure, keep the machinery mount of opposing parallel relation and adjusting angle), the representative value of the present embodiment is 45 °, with will be with external spectrum 8 and be with external spectrum 9 filtering, in band, spectrum 10 can focus on intermediate focus 17 place by spectrum purifying filter 18, in band, spectrum 10 is by outputting to lithography illuminating system 7 after Second Window 16.First grating 11 and the second grating 13 are used in conjunction with each other, and have strong reflex to the band external spectrum that wavelength is more than 100nm.Thickness is that the foil 12 of 0.1 ~ 5mm is made up of zirconium or molybdenum, can filtering wavelength at the band external spectrum of below 100nm.By the 3rd window 15 after band external spectrum 8 and 9 is reflected by spectrum purifying filter 18 of the present invention, can be used for monitoring laser beam 1 focus point and the interactional situation of zinc drop 3 (eliminating monitor in figure).The heat effect to cavity can be reduced on the other hand.
Claims (4)
1. the spectrum purifying filter for laser plasma extreme Ultraviolet Lithography Source, be characterised in that it forms the first grating (11) comprising surface coating successively, for 13.5nm spectrum, there is the foil (12) of high permeability and second grating (13) of surface coating, described the first grating (11), foil (12) is parallel with the surperficial three of the second grating (13), first grating (11) and the second grating (13) have identical structure, first grating (11) is mutually vertical with the line orientations of the second grating (13), grating constant is 10 ~ 150nm, dutycycle is 40% ~ 60%, thickness is 1 ~ 10mm.
2. spectrum purifying filter according to claim 1, it is characterized in that described the first grating (11) and the second grating (13) are made up of silicon single crystal material, surface is coated with ZrSi
2or MoSi
2film, spectrum wavelength being greater than to 100nm has high reflectance.
3. spectrum purifying filter according to claim 1, is characterized in that the grating constant of described the first grating (11) and the second grating (13) is 100nm.
4. the spectrum purifying filter according to any one of claims 1 to 3, it is characterized in that described foil (12) is made up of zirconium or molybdenum, thickness 0.1 ~ 5mm, extreme ultraviolet spectrum wavelength being less than to 10nm has high reflectance.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310093540.4A CN103149618B (en) | 2013-03-21 | 2013-03-21 | Light spectrum purification filter device for laser plasma extreme ultraviolet lithography source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310093540.4A CN103149618B (en) | 2013-03-21 | 2013-03-21 | Light spectrum purification filter device for laser plasma extreme ultraviolet lithography source |
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| CN103149618A CN103149618A (en) | 2013-06-12 |
| CN103149618B true CN103149618B (en) | 2015-06-17 |
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| CN201310093540.4A Expired - Fee Related CN103149618B (en) | 2013-03-21 | 2013-03-21 | Light spectrum purification filter device for laser plasma extreme ultraviolet lithography source |
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| CN109407189B (en) * | 2017-08-18 | 2021-05-04 | 台湾积体电路制造股份有限公司 | Ultraviolet light composite grating and plasma device |
Citations (3)
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|---|---|---|---|---|
| CN1297161A (en) * | 1999-11-17 | 2001-05-30 | 哈维特有限公司 | Solid imaging device integrated with optical low-pass filter |
| CN101868738A (en) * | 2007-09-19 | 2010-10-20 | 雷文布里克有限责任公司 | The low-E fenestrated membrane and the coating that comprise the nanometer wiregrating |
| CN102364360A (en) * | 2011-11-02 | 2012-02-29 | 同济大学 | Unpolarized tunable guided-mode resonance filter system and method for measuring nanometer gap |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6577442B2 (en) * | 2001-09-27 | 2003-06-10 | Intel Corporation | Reflective spectral filtering of high power extreme ultra-violet radiation |
| JP2009157232A (en) * | 2007-12-27 | 2009-07-16 | Mitsubishi Rayon Co Ltd | Low-pass filter and manufacturing method for it |
| CN102636967B (en) * | 2012-04-19 | 2014-02-26 | 苏州大学 | Surface plasma nanometer photo-etching structure and method |
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2013
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1297161A (en) * | 1999-11-17 | 2001-05-30 | 哈维特有限公司 | Solid imaging device integrated with optical low-pass filter |
| CN101868738A (en) * | 2007-09-19 | 2010-10-20 | 雷文布里克有限责任公司 | The low-E fenestrated membrane and the coating that comprise the nanometer wiregrating |
| CN102364360A (en) * | 2011-11-02 | 2012-02-29 | 同济大学 | Unpolarized tunable guided-mode resonance filter system and method for measuring nanometer gap |
Non-Patent Citations (1)
| Title |
|---|
| 提高极紫外光谱纯度的多层膜设计及制备;祝文秀等;《光学学报》;20121031;第32卷(第10期);1031002-1~1031002-6 * |
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