CN103137890A - Top-emitting organic electroluminescence device and manufacturing method thereof - Google Patents
Top-emitting organic electroluminescence device and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a top-emitting organic electroluminescence device and a manufacturing method thereof. The top-emitting organic electroluminescence device comprises a substrate, a positive electrode, a hole injection layer, a hole transmission layer, a luminescent layer, an electron transmission layer, an electron injection layer and a negative electrode, wherein a titanium dioxide antireflection film is formed on the negative electrode. The manufacturing method of the top-emitting organic electroluminescence device comprises a procedure that the titanium dioxide antireflection film is formed on the negative electrode. Compared with a top-emitting organic electroluminescence device in the prior art, the top-emitting organic electroluminescence device has the advantages that the light emitting rate is high, and luminous efficiency is greatly improved.
Description
Technical field
The present invention relates to a kind of top radiation organic EL part and preparation method thereof.
Background technology
1987, the C.W.Tang of U.S. Eastman Kodak company and VanSlyke reported the breakthrough in organic electroluminescent research, utilize the ultrathin film technology to prepare high brightness, high efficiency double-deck organic electroluminescence device (OLED).In this double-deck device, under 10V, brightness reaches 1000 cd/m
2, its luminous efficiency is 1.51 lm/W, the life-span was greater than 100 hours.
The principle of luminosity of OLED is based under the effect of extra electric field, and electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and the hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from the ground state transition to excitation state, excited energy produces photon by Radiation-induced deactivation, discharges luminous energy.
In traditional organic electroluminescence device, most study be end radiation organic EL part, this luminescent device is take the ito glass substrate as exiting surface, technology of preparing is ripe.But, because the outgoing meeting of light is first reflected through the absorption of ITO electric conducting material, then to carry out subvitreous absorption and a reflection, therefore, most light loses, and the exitance of light is low.Will improve the light exitance to this class luminescent device, need to improve luminous efficiency to the shape transformation of exit facet substrate, operation increases, processed complex; Simultaneously, the light of end emission changes with the change of angle of visibility, and luminescent spectrum is changed, and is photochromic concentrated, affects illumination effect.
In recent years, beginning constantly advances the research top radiation organic EL part, such luminescent device is due in top-emission, the ito glass substrate is shady face, therefore, has well solved substrate to Optical Absorption and emission problem, and, it is all very consistent that the top is transmitted in different visual ranges spectrum, changes littlely, solved the photochromic problem that changes with the change of angle of visibility.But such luminescent device requires cathode material to have very high transmitance, can be by too much absorption by negative electrode the time to guarantee utilizing emitted light.And in various electric conducting materials, all be difficult to obtain gratifying transmitance, and cause the exitance of luminescent device light low, be difficult to obtain higher luminous efficiency.
At patent documentation 1(CN101345292A) on negative electrode evaporation oxine aluminium, SiO, ITO etc. have been proposed as the technology of antireflection layer, still, do not obtain gratifying effect.
Summary of the invention
The exitance that the object of the invention is to overcome light in existing top radiation organic EL part is low, be difficult to obtain the problem of gratifying luminous efficiency, the exitance that a kind of light is provided increases and top radiation organic EL part and manufacture method thereof that luminous efficiency is greatly improved.
The inventor is by research discovery with keen determination, by form the titanium dioxide anti-reflection film on the negative electrode of top radiation organic EL part, can improve the exitance of light in top radiation organic EL part, luminous efficiency is greatly improved, thereby complete the present invention.
The invention provides a kind of top radiation organic EL part, it comprises substrate, anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, negative electrode, wherein, is formed with the titanium dioxide anti-reflection film on negative electrode.
The present invention also provides a kind of manufacture method of top radiation organic EL part, and it wherein, is included in the operation that forms the titanium dioxide anti-reflection film on negative electrode for the manufacture of above-mentioned organic electroluminescence device.
Form the titanium dioxide anti-reflection film on the negative electrode of top radiation organic EL part, because the refractive index of titanium dioxide is more than 2.0, can play good anti-reflection effect, can improve the exitance of light, luminous efficiency is greatly improved.
Description of drawings
Fig. 1 means the structural representation of top radiation organic EL part of the present invention.
Fig. 2 means the luminous efficiency comparison diagram of the top radiation organic EL part of the top radiation organic EL part of embodiment 1 and comparative example 1.Curve 1 means top radiation organic EL part (glass/Ag/MoO of embodiment 1
3/ TAPC/Alq
3/ TPBi/CsN
3/ Ag/TiO
2) brightness and the relation of luminous efficiency, curve 2 means the top radiation organic EL part (glass/Ag/MoO of comparative example 1
3/ TAPC/Alq
3/ TPBi/CsN
3/ brightness Ag) and the relation of luminous efficiency.
Wherein, description of reference numerals is as follows: 1 titanium dioxide anti-reflection film; 2 negative electrodes; 3 electron injecting layers; 4 electron transfer layers; 5 luminescent layers; 6 hole transmission layers; 7 hole injection layers; 8 anodes; 9 substrates.
Embodiment
Below, be described in detail by reference to the accompanying drawings for the present invention.Fig. 1 means the structural representation of top radiation organic EL part of the present invention.
As shown in Figure 1, top radiation organic EL part of the present invention, it comprises substrate 9, anode 8, hole injection layer 7, hole transmission layer 6, luminescent layer 5, electron transfer layer 4, electron injecting layer 3, negative electrode 2, it is characterized in that, is formed with titanium dioxide anti-reflection film 1 on negative electrode.
By form titanium dioxide anti-reflection film 1 on the negative electrode 2 of top radiation organic EL part, because the refractive index of titanium dioxide is more than 2.0, can play good anti-reflection effect, improve the exitance of the light of top radiation organic EL part, luminous efficiency is greatly improved.
In top radiation organic EL part of the present invention, the thickness of described titanium dioxide anti-reflection film 1 is 20nm～150nm preferably.When the thickness of titanium dioxide anti-reflection film 1 was 20nm～150nm, titanium dioxide anti-reflection film 1 can play anti-reflection effect better, improves the exitance of the light of top radiation organic EL part, and luminous efficiency is greatly improved.
Further, consider from the angle of anti-reflection effect and cost of manufacture, the thickness of titanium dioxide anti-reflection film 1 is more preferably 40nm～80nm.
In top radiation organic EL part of the present invention, described titanium dioxide anti-reflection film 1 is the anatase titania film.The anatase titania film has advantages of that crystal boundary is abundant, even air hole distribution, specific area are large, with low cost, it is less to absorb in visible-range, scattering power is strong, most light scattering can be gone out, and can make the light of part reflection form stronger microcavity effect at device inside, thereby further strengthen the outgoing of light.
In top radiation organic EL part of the present invention, except being formed with on negative electrode 2 titanium dioxide anti-reflection film 1 as above, all the other are all parts commonly used in top radiation organic EL part.
For example, described substrate 9 can be exemplified as glass, and this glass can be exemplified as common commercially available glass.
Described anode 8 and negative electrode 2 can be exemplified as silver (Ag), aluminium (Al), platinum (Pt) or gold (Au), are preferably Ag, and the thickness of anode can be exemplified as 80～250nm, is preferably 150nm, and cathode thickness can be exemplified as 5～60nm, is preferably 10nm.
Described hole injection layer 7 can adopt molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2O
5), be preferably MoO
3, thickness can be exemplified as 20～80nm, is preferably 40nm.
Described hole transmission layer 6 can adopt following hole mobile material: 1,1-two [4-[N, N'-two (p-tolyl) amino] phenyl] cyclohexane (TAPC), N, N'-two (3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD), 4,4', 4''-three (carbazole-9-yl) triphenylamine (TCTA) or N, the N'-(1-naphthyl)-N, N '-diphenyl-4,4'-benzidine (NPB) preferably adopts TAPC, thickness can be exemplified as 20～60nm, is preferably 40nm.
Described luminescent layer 5 can adopt one or more in following luminescent material: 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl julolidine-9-vinyl)-4H-pyrans (DCJTB), oxine aluminium (Alq
3), two (4,6-difluorophenyl pyridine-N, C
2) the pyridine formyl closes iridium (FIrpic), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) and close iridium (Ir(MDQ)
2(acac)) or three (2-phenylpyridines) close iridium (Ir(ppy)
3).Wherein, preferably adopt oxine aluminium (Alq
3).
Above-mentioned luminescent layer 5 is to adopt separately above-mentioned luminescent material to make as luminescent layer, perhaps with above-mentioned hole mobile material or following electron transport material in one or both carry out mixing and doping and make, its doping ratio is 1%～20%.
The thickness of luminescent layer 5 can be exemplified as 2～50nm, is preferably 30nm.
Described electron transfer layer 4 can adopt following electron transport material: the 2-(4-xenyl)-5-(4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), oxine aluminium (Alq
3), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (TAZ) or N-aryl benzimidazole (TPBI) are preferably TPBI.Thickness can be exemplified as 40～80nm, is preferably 60nm.
Electron injecting layer 3 can adopt cesium carbonate (Cs
2CO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF), be preferably CsN
3Thickness can be exemplified as 0.5～10nm, is preferably 5nm.
The manufacture method of top radiation organic EL part of the present invention, it is characterized in that for the manufacture of above-mentioned organic electroluminescence device, is included in the operation that forms titanium dioxide anti-reflection film 1 on negative electrode 2.
In the manufacture method of top radiation organic EL part of the present invention, the thickness of described titanium dioxide anti-reflection film 1 is 20～150nm preferably, is more preferably 40～80nm.
In the manufacture method of top radiation organic EL part of the present invention, described operation forming titanium dioxide anti-reflection film 1 on negative electrode 2 is evaporation rutile titanium dioxide powder and form the operation of anatase titania film on negative electrode under vacuum condition preferably.
In the manufacture method of top radiation organic EL part of the present invention, described rutile titanium dioxide powder preferably obtains by TiO 2 sol being calcined then grind.
In the manufacture method of top radiation organic EL part of the present invention, described calcining is preferably calcined 30～60min under 450 ℃.
In addition, described TiO 2 sol is for example to use commercially available P25 type titanium dioxide granule, and employing isopropyl alcohol etc. is solvent, the colloid that is configured.Wherein, the titanium dioxide mass fraction is preferably 5%～40%, and adds 5～20% Qu Latong emulsifying agent is arranged.
In the manufacture method of top radiation organic EL part of the present invention, except being formed with as mentioned above on negative electrode 2 titanium dioxide anti-reflection film 1, all the other are all common manufacture methods in manufacturing in top radiation organic EL part.
For example, substrate is carried out supersound washing with liquid detergent, deionized water, acetone, ethanol and/or isopropyl alcohol etc., washing time can be exemplified as 5～15min, removes the organic pollution of glass surface.
For example, by normal condition, vacuum evaporation anode 8, hole injection layer 7, hole transmission layer 6, luminescent layer 5, electron transfer layer 4, electron injecting layer 3 and negative electrode 2 on substrate 9.
in the manufacture method of top radiation organic EL part of the present invention, form the anatase titania film on negative electrode by evaporation rutile titanium dioxide powder under vacuum condition, thus, titanium dioxide purity is high, crystal grain is tiny, good uniformity, crystal boundary is abundant, even air hole distribution, specific area is large, with low cost, and be conducive to commercially produce, and nano level titanium deoxid film, absorb less in visible-range, scattering power is very strong, most light scattering can be gone out, also can make the light of part reflection form stronger microcavity effect at device inside, thereby further strengthen the outgoing of light, and the film surface that makes is without crack performance, be conducive to the encapsulation in later stage, improve device lifetime.
Below, the present invention will be described in more detail by embodiment and comparative example etc.
Embodiment 1: prepare top radiation organic EL part according to following step.
Glass substrate is used liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol successively, remove the organic pollution of glass surface.Then, vacuum evaporation anode successively, material is Ag, thickness is 120nm; Hole injection layer, material are MoO
3, thickness is 30nm; Hole transmission layer, material are TAPC, and thickness is 30nm; Luminescent layer, material are Alq
3, thickness is 20nm; Electron transfer layer, material are TPBI, and thickness is 50nm; Electron injecting layer, material are CsN
3, thickness is 3nm; And negative electrode, material is Ag, thickness is 20nm.
Then, take isopropyl alcohol as solvent, add the triton x-100 emulsifying agent of 35 % by weight P25 type titanium dioxide granules, 20 % by weight, stir 24h, the configuration TiO 2 sol.Then, TiO 2 sol is sprayed on simple glass, then glass is placed under 450 ℃ and calcines 30min, obtain the anatase titania film.Then, film is placed on the grinding alms bowl fully grinds, obtain the titania powder of small particle diameter, porous.At last, the above-mentioned titania powder of vacuum evaporation, obtaining thickness is the anatase titania film of 60nm.
Obtain the top radiation organic EL part of following formation: glass/Ag/MoO
3/ TAPC/Alq
3/ TPBi/CsN
3/ Ag/TiO
2
Wherein, high vacuum coating equipment (manufacturing of scientific instrument development center, Shenyang Co., Ltd) is adopted in vacuum evaporation, is＜1 * 10 at pressure
-3Carry out under the condition of Pa.
Embodiment 2: prepare top radiation organic EL part according to following step.
Glass substrate is used liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol successively, remove the organic pollution of glass surface.Then, vacuum evaporation anode successively, material is Al, thickness is 250nm; Hole injection layer, material are WO
3, thickness is 20nm; Hole transmission layer, material are NPB, and thickness is 60nm; Luminescent layer, material are that DCJTB, thickness are 50nm; Electron transfer layer, material are TAZ, and thickness is 40nm; Electron injecting layer, material are LiF, and thickness is 0.7nm; And negative electrode, material is Ag, thickness is 30nm.
Then, take isopropyl alcohol as solvent, add the triton x-100 emulsifying agent of 25 % by weight P25 type titanium dioxide granules, 15 % by weight, stir 24h, the configuration TiO 2 sol.Then, TiO 2 sol is sprayed on simple glass, then glass is placed under 450 ℃ and calcines 60min, obtain the anatase titania film.Then, film is placed on the grinding alms bowl fully grinds, obtain the titania powder of small particle diameter, porous.At last, the above-mentioned titania powder of vacuum evaporation, obtaining thickness is the anatase titania film of 30nm.
Obtain the top radiation organic EL part of following formation: glass/Al/ WO
3/ NPB/DCJTB/TAZ/LiF/Ag/TiO
2
Wherein, high vacuum coating equipment (manufacturing of scientific instrument development center, Shenyang Co., Ltd) is adopted in vacuum evaporation, is＜1 * 10 at pressure
-3Carry out under the condition of Pa.
Embodiment 3: prepare top radiation organic EL part according to following step.
Glass substrate is used liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol successively, remove the organic pollution of glass surface.Then, vacuum evaporation anode successively, material is Au, thickness is 80nm; Hole injection layer, material are V
2O
5, thickness is 25nm; Hole transmission layer, material are TCTA, and thickness is 20nm; Luminescent layer, material are that TCTA:Firpic, doping ratio are 20%, and thickness is 25nm; Electron transfer layer, material are TAZ, and thickness is 50nm; Electron injecting layer, material are LiF, and thickness is 0.5nm; And negative electrode, material is Ag, thickness is 50nm.
Then, take isopropyl alcohol as solvent, add the triton x-100 emulsifying agent of 40 % by weight P25 type titanium dioxide granules, 15 % by weight, stir 24h, the configuration TiO 2 sol.Then, TiO 2 sol is sprayed on simple glass, then glass is placed under 450 ℃ and calcines 40min, obtain the anatase titania film.Then, film is placed on the grinding alms bowl fully grinds, obtain the titania powder of small particle diameter, porous.At last, the above-mentioned titania powder of vacuum evaporation, obtaining thickness is the anatase titania film of 150nm.
Obtain the top radiation organic EL part of following formation: glass/Au/ V
2O
5/ TCTA/TCTA:Firpic/TAZ/LiF/Ag/TiO
2
Wherein, high vacuum coating equipment (manufacturing of scientific instrument development center, Shenyang Co., Ltd) is adopted in vacuum evaporation, is＜1 * 10 at pressure
-3Carry out under the condition of Pa.
Embodiment 4: prepare top radiation organic EL part according to following step.
Glass substrate is used liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol successively, remove the organic pollution of glass surface.Then, vacuum evaporation anode successively, material is Pt, thickness is 100nm; Hole injection layer, material are WO
3, thickness is 20nm; Hole transmission layer, material are TPD, and thickness is 35nm; Luminescent layer, material are NPB:Ir(MDQ)
2(acac), doping ratio is 1%, thickness is 2nm; Electron transfer layer, material are TAZ, and thickness is 60nm; Electron injecting layer, material are CsF, and thickness is 5nm; And negative electrode, material is Pt, thickness is 10nm.
Then, take isopropyl alcohol as solvent, add the triton x-100 emulsifying agent of 5 % by weight P25 type titanium dioxide granules, 10 % by weight, stir 24h, the configuration TiO 2 sol.Then, TiO 2 sol is sprayed on simple glass, then glass is placed under 450 ℃ and calcines 50min, obtain the anatase titania film.Then, film is placed on the grinding alms bowl fully grinds, obtain the titania powder of small particle diameter, porous.At last, the above-mentioned titania powder of vacuum evaporation, obtaining thickness is the anatase titania film of 45nm.
Obtain the top radiation organic EL part of following formation: glass/Pt/ WO
3/ TPD/ NPB:Ir(MDQ)
2(acac)/TAZ/CsF/Pt/TiO
2
Wherein, high vacuum coating equipment (manufacturing of scientific instrument development center, Shenyang Co., Ltd) is adopted in vacuum evaporation, is＜1 * 10 at pressure
-3Carry out under the condition of Pa.
Embodiment 5: prepare top radiation organic EL part according to following step.
Glass substrate is used liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol successively, remove the organic pollution of glass surface.Then, vacuum evaporation anode successively, material is Ag, thickness is 180nm; Hole injection layer, material are MoO
3, thickness is 50nm; Hole transmission layer, material are TAPC, and thickness is 50nm; Luminescent layer, material are TCTA:Ir(ppy)
3, doping ratio is 8%, thickness is 10nm; Electron transfer layer, material are TAZ, and thickness is 80nm; Electron injecting layer, material are Cs
2CO
3, thickness is 10nm; And negative electrode, material is Al, thickness is 8nm.
Then, take isopropyl alcohol as solvent, add the triton x-100 emulsifying agent of 10 % by weight P25 type titanium dioxide granules, 5 % by weight, stir 24h, the configuration TiO 2 sol.Then, TiO 2 sol is sprayed on simple glass, then glass is placed under 450 ℃ and calcines 35min, obtain the anatase titania film.Then, film is placed on the grinding alms bowl fully grinds, obtain the titania powder of small particle diameter, porous.At last, the above-mentioned titania powder of vacuum evaporation, obtaining thickness is the anatase titania film of 75nm.
Obtain the top radiation organic EL part of following formation: glass/Ag/MoO
3/ TAPC/ TCTA:Ir(ppy)
3/ TAZ/ Cs
2CO
3/ Al/TiO
2
Wherein, high vacuum coating equipment (manufacturing of scientific instrument development center, Shenyang Co., Ltd) is adopted in vacuum evaporation, is＜1 * 10 at pressure
-3Carry out under the condition of Pa.
Comparative example 1: prepare top radiation organic EL part according to following step.
Glass substrate is used liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol successively, remove the organic pollution of glass surface.Then, vacuum evaporation anode successively, material is Ag, thickness is 120nm; Hole injection layer, material are MoO
3, thickness is 30nm; Hole transmission layer, material are TAPC, and thickness is 30nm; Luminescent layer, material are Alq
3, thickness is 20nm; Electron transfer layer, material are TPBI, and thickness is 50nm; Electron injecting layer, material are CsN
3, thickness is 3nm; And negative electrode, material is Ag, thickness is 20nm.
Obtain the top radiation organic EL part of following formation: glass/Ag/MoO
3/ TAPC/Alq
3/ TPBi/CsN
3/ Ag.
Wherein, high vacuum coating equipment (manufacturing of scientific instrument development center, Shenyang Co., Ltd) is adopted in vacuum evaporation, is＜1 * 10 at pressure
-3Carry out under the condition of Pa.
Test case 1: adopt screen intensity meter (Beijing Normal University, model: ST-86LA), current-voltage tester (U.S. Keithly company, model: 2602), the luminous efficiency of the mode test implementation example 1 by changing brightness and the top radiation organic EL part of comparative example 1.The results are shown in table 1 and Fig. 2.
| Brightness (cd/cm 2) | 150 | 1000 | 1580 | 2020 | 2370 | 2650 | 2880 | 3090 | 3280 |
| The luminous efficiency of embodiment 1 (lm/w) | 16.9 | 15.3 | 14.5 | 13.7 | 13.2 | 12.4 | 11.3 | 10.5 | 9.4 |
| The luminous efficiency of comparative example 1 (lm/w) | 10.5 | 10.0 | 9.6 | 8.7 | 7.8 | 7.0 | 6.2 | 5.5 | 4.8 |
Table 1.
Fig. 2 means the luminous efficiency comparison diagram of the top radiation organic EL part of top radiation organic EL part of the present invention and prior art.Curve 1 means top radiation organic EL part (glass/Ag/MoO of embodiment 1
3/ TAPC/Alq
3/ TPBi/CsN
3/ Ag/TiO
2) brightness and the relation of luminous efficiency, curve 2 means the top radiation organic EL part (glass/Ag/MoO of comparative example 1
3/ TAPC/Alq
3/ TPBi/CsN
3/ brightness Ag) and the relation of luminous efficiency.
Can find out from Fig. 2, under different brightness, the luminous efficiency of the top radiation organic EL part of embodiment 1 is all than large many of the luminous efficiency of the top radiation organic EL part of comparative example 1.And the luminous efficiency of the top radiation organic EL part of embodiment 1 is up to 16.9 lm/W, and the luminous efficiency of the top radiation organic EL part of comparative example 1 is only up to 10.5 lm/W.
This shows, by preparation titanium dioxide anti-reflection film on negative electrode, all can play well anti-reflection effect under various brightness conditions, the scattering power of device is strengthened, most light scattering is gone out, also make device inside form stronger microcavity effect, further strengthen the outgoing of light, significantly improved the luminous efficiency of top radiation organic EL part.
Test case 2: adopt the screen intensity meter (Beijing Normal University, model: ST-86LA), the current-voltage tester (U.S. Keithly company, model: 2602), at constant brightness (150cd/m
2) luminous efficiency of top radiation organic EL part of lower test implementation example 1～5 and comparative example 1.The results are shown in table 2.
| ? | |
Embodiment 2 | Embodiment 3 | |
Embodiment 5 | Comparative example 1 |
| Luminous efficiency (Lm/w) | 16.9 | 16.2 | 13.5 | 10.6 | 15.5 | 10.5 |
Table 2: as can be seen from Table 2, under same brightness, embodiment 1～3 and 5 luminous efficiency are all than large many of the luminous efficiency of comparative example 1.Although the luminous efficiency of the luminous efficiency of embodiment 4 and comparative example 1 is basic identical, this light transmission that is mainly light transmission due to Pt far is worse than Ag causes.
This shows, by form the titanium dioxide anti-reflection film on negative electrode, can not rely on the anti-reflection effect of formation ground performance of substrate, anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, negative electrode etc., the scattering power of device is strengthened, most light scattering is gone out, also make device inside form stronger microcavity effect, further strengthen the outgoing of light, thereby improved luminous efficiency.
Although invention has been described in conjunction with thinking at present practical exemplary embodiment; yet; be to be understood that; the present invention should not be limited to disclosed exemplary embodiment; on the contrary; all in claims of the present invention spirit and principle within do any modification, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. top radiation organic EL part, it comprises substrate, anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, negative electrode, it is characterized in that, is formed with the titanium dioxide anti-reflection film on negative electrode.
2. top radiation organic EL part as claimed in claim 1, wherein, the thickness of described titanium dioxide anti-reflection film is 20nm～150nm.
3. top radiation organic EL part as claimed in claim 2, wherein, the thickness of described titanium dioxide anti-reflection film is 40nm～80nm.
4. top radiation organic EL part as described in any one in claim 1～3, wherein, described titanium dioxide anti-reflection film is the anatase titania film.
5. the manufacture method of a top radiation organic EL part, it is characterized in that for the manufacture of the described organic electroluminescence device of any one in claim 1～4, is included in the operation that forms the titanium dioxide anti-reflection film on negative electrode.
6. the manufacture method of top radiation organic EL part as claimed in claim 5, wherein, the thickness of described titanium dioxide anti-reflection film is 20～150nm.
7. the manufacture method of top radiation organic EL part as claimed in claim 6, wherein, the thickness of described titanium dioxide anti-reflection film is 40～80nm.
8. the manufacture method of top radiation organic EL part as claimed in claim 5, wherein, described operation forming the titanium dioxide anti-reflection film on negative electrode is evaporation rutile titanium dioxide powder and form the operation of anatase titania film on negative electrode under vacuum condition.
9. the manufacture method of top radiation organic EL part as claimed in claim 8, wherein, described rutile titanium dioxide powder is to obtain by TiO 2 sol being calcined then grind.
10. the manufacture method of top radiation organic EL part as claimed in claim 9, wherein, described calcining is to calcine 30～60min under 450 ℃.
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| CN110199572A (en) * | 2017-01-20 | 2019-09-03 | 索尼半导体解决方案公司 | Display device, electronic equipment and the method for manufacturing display device |
| US11769773B2 (en) | 2017-01-20 | 2023-09-26 | Sony Semiconductor Solutions Corporation | Display device, electronic device, and method of manufacturing display device with substrate including light emitting elements adhered to substrate including microlens array |
| CN110199572B (en) * | 2017-01-20 | 2024-01-26 | 索尼半导体解决方案公司 | Display device, electronic apparatus, and method of manufacturing display device |
| CN113215536A (en) * | 2021-04-20 | 2021-08-06 | 北方夜视技术股份有限公司 | Small-grain anatase optical film, preparation method and application thereof |
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Application publication date: 20130605 |