CN103137858A - Forming method and forming device of magnetic material layers - Google Patents
Forming method and forming device of magnetic material layers Download PDFInfo
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- CN103137858A CN103137858A CN2011103976568A CN201110397656A CN103137858A CN 103137858 A CN103137858 A CN 103137858A CN 2011103976568 A CN2011103976568 A CN 2011103976568A CN 201110397656 A CN201110397656 A CN 201110397656A CN 103137858 A CN103137858 A CN 103137858A
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- 238000000034 method Methods 0.000 title claims abstract description 112
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 25
- 238000000137 annealing Methods 0.000 claims abstract description 21
- 229910001510 metal chloride Inorganic materials 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims description 148
- 230000015572 biosynthetic process Effects 0.000 claims description 100
- 239000000463 material Substances 0.000 claims description 65
- 238000005229 chemical vapour deposition Methods 0.000 claims description 35
- 239000000460 chlorine Substances 0.000 claims description 28
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 24
- 229910052801 chlorine Inorganic materials 0.000 claims description 24
- 239000011261 inert gas Substances 0.000 claims description 22
- 230000005389 magnetism Effects 0.000 claims description 22
- 239000012774 insulation material Substances 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 14
- 238000005137 deposition process Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- 230000032258 transport Effects 0.000 claims description 6
- 238000007560 sedimentation technique Methods 0.000 abstract 1
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 229910019236 CoFeB Inorganic materials 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
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- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
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Abstract
The invention provides a forming method of magnetic material layers. The forming method includes providing a substrate which comprises an opening used for forming the magnetic material layers; utilizing a chemical gas phase sedimentation technique of reducing metal chloride to form metal layers which covers the bottom portion of and a part of the side wall of the opening, , wherein the metal layers comprise first metal material layers and second metal material layers placed on the surfaces of the first metal material layers; and conducting an annealing process for the first metal material layers and the second metal material layers to form the magnetic material layers. The follow-up magnetic material layers formed through the forming method are good in quality, performance of the magnetic tunnel structure is stable, and reliability is high. Correspondingly, the invention further provides a forming device of the magnetic material layers, and conditions are provided for the method.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate in particular to a kind of formation method of magnetic material layer and form device.
Background technology
In recent years, due to magnetic memory (Magnetic Random Access Memory, MRAM) have short access time, characteristics non-volatile and low in energy consumption, magnetic memory receives much concern as being applicable to the storage device on the messaging devices such as computer or communication tool.
The magnetic memory of prior art stores information in magnetic tunnel-junction (Magnetic Tunnel Junction, MTJ) structure into by applying magnetic field, and by measuring the electric current reading information of MTJ.Particularly, described MTJ is made of two magnetic material layers and the insulating barrier between described two magnetic material layers.
The structure of the magnetic memory of prior art comprises: as the transistor of switching device with for the magnetic tunnel junction cell of storing data.Wherein, the structure of described magnetic tunnel-junction please refer to Fig. 1, magnetic tunnel junction cell comprises top conductive layer 113, magnetic tunnel junction cell main body (Magnetic tunnel junction, MTJ) 110, bottom conductive layer 101, wherein, magnetic tunnel junction cell main body 110 replaces stacking forming by fixed magnetic material layer (PL) 105, tunnel insulation material layer 107 and free magnetism material layer (FL) 109.Described magnetic tunnel junction cell main body 110 is three layers or sandwich construction, wherein said magnetic tunnel junction cell main body 110 can also comprise: be positioned at the first tunnel insulation material layer 111 on described free magnetism material layer 109 surfaces, be used for described free magnetism material layer 109 and top conductive layer 113 are separated; Be positioned at the second tunnel insulation material layer 103 on described bottom conductive layer 101 surfaces, be used for described fixed magnetic material layer 105 and bottom conductive layer 101 are separated.
Wherein, the effect of described fixed magnetic material layer 105 is that the direction of magnetization is fixed, and compares with the direction of magnetization of free magnetism material layer 109, and the direction of magnetization of free magnetism material layer 109 is able to programme.When the magnetic access memory was carried out write operation, the magnetization of free magnetism material layer 109 was programmed for respect to the magnetization of fixed magnetic material layer 105 parallel (logical zero state), shows as low resistance state; Perhaps antiparallel (logical one state), show as high-impedance state, thereby realize two store statuss.In the process of " reading ", by the resistance of comparison magnetic tunnel junction cell and the resistance of standard cell, read the state of magnetic RAM.
Yet along with further reducing of process node, the reliability of the magnetic memory that prior art forms is low, can't further satisfy industrial requirement.
More structures about magnetic tunnel-junction in magnetic memory please refer to publication number and are the United States Patent (USP) of " US20070176251A1 ".
Summary of the invention
The problem that the present invention solves is to provide a kind of formation method of magnetic material layer and forms device, and the reliability of the magnetic memory of formation is high.
For addressing the above problem, embodiments of the invention provide a kind of formation method of magnetic material layer, comprising:
Substrate is provided, and described substrate comprises the opening that is used to form magnetic material layer;
Adopt the muriatic chemical vapor deposition method in reducing metal, form the open bottom that covers described substrate and the metal level of partial sidewall, described metal level comprises the first metal material layer and is positioned at second metal material layer on described the first metal material layer surface;
Described the first metal material layer, the second metal material layer are carried out annealing in process, form magnetic material layer.
Alternatively, the technological parameter of described annealing in process comprises: 1 atmospheric pressure, and inert gas Ar or He, temperature is 300 ℃-400 ℃, annealing duration 2-4 minute; Perhaps 1 atmospheric pressure, inert gas Ar or He, temperature is 500 ℃-600 ℃, annealing duration 8-15 second.
Alternatively, the material of described the first metal material layer is Co, and the material of described the second metal material layer is Fe; Perhaps the material of described the first metal material layer is Fe, and the material of described the second metal material layer is Co.
Alternatively, the thickness of described the first metal material layer less than
The thickness of described the second metal material layer less than
Alternatively, the muriatic chemical vapor deposition method in described employing reducing metal, the step of the open bottom of the described substrate of formation covering and the metal level of partial sidewall comprises: metallic plate is provided, places described metallic plate in the opening top of wafer; The chlorine of plasma state and described metallic plate react, and form the metal chloride of gaseous state; Metal in the metal chloride of described gaseous state combines with the material of substrate surface, forms the intermediate layer; The metal chloride of described gaseous state and the reaction of described intermediate layer form metal level at described substrate surface.
Alternatively, the technological parameter of the chlorine of the described plasma state of formation comprises: frequency is 2-4MHz, and power is 200-500W, and pressure is 0.01-0.1Torr, Cl
2Flow be 200-1000sccm.
Alternatively, also comprise: pass into inert gas as the carrier of the chlorine of plasma state.
Alternatively, the technological parameter of the described metal level of formation comprises: temperature is 250-350 ℃, and pressure is 0.01-0.1Torr.
Alternatively, also comprise: respectively the first metal material layer, the second metal material layer are carried out purified treatment.
Alternatively, also comprise: adopt atom layer deposition process, form the 3rd film that covers described the second metal material layer surface.
Alternatively, the source gas of described the 3rd film employing of formation is B
2H
6, the material of the 3rd film of formation is B.
Alternatively, the process parameters range that forms described the 3rd film is: temperature is 250-350 ℃, and pressure is 0.01-0.1Torr, and the gas flow of source gas is 200-1000sccm.
Alternatively, also comprise: pass into inert gas when forming described the 3rd film.
Alternatively, described inert gas is Ar, He or N
2
Alternatively, the flow of described inert gas is 500-3000sccm.
Alternatively, when described magnetic material layer was the fixed magnetic material layer, described substrate also comprised: the bottom electrode layer that covers described open bottom and partial sidewall.
Alternatively, when described magnetic material layer was the free magnetism material layer, described substrate also comprised: the bottom electrode layer that covers described open bottom and partial sidewall; Cover the fixed magnetic material layer on described bottom electrode layer surface, cover the tunnel insulation material layer of described fixed magnetic material surface, described the first metal material layer covers insulation material layer surface, described tunnel.
Accordingly, also provide a kind of formation device of magnetic material layer in embodiments of the invention, comprised the reaction chamber that is used to form magnetic material layer, the described reaction chamber that is used to form magnetic material layer comprises:
The first reaction chamber is used for adopting the muriatic chemical vapor deposition method in reducing metal to form the first metal material layer;
The second reaction chamber, adjacent with described the first reaction chamber, be used for adopting the muriatic chemical vapor deposition method in reducing metal to form the second metal material layer that covers described the first metal material layer;
Clean unit between the first reaction chamber and the second reaction chamber, is used for removing the impurity of crystal column surface;
Whirligig, comprise rotating shaft and at least one turning arm that is connected with described rotating shaft, the first reaction chamber, the second reaction chamber, clean unit are positioned at described rotating shaft as central point, on the circumference of turning arm as radius, described turning arm transports wafer in the first reaction chamber, clean unit or the second reaction chamber by the rotation of rotating shaft.
Alternatively, described the first reaction chamber comprises the first base station, is used for placing the wafer of the first metal material layer to be formed; Be positioned at the clamping device of described the first base station top, be used for clamping the first metallic plate; Described the second reaction chamber comprises the second base station, is used for placing the wafer that is formed with the first metal material layer; Be positioned at the clamping device of described the second base station top, be used for clamping the second metallic plate.
Alternatively, also comprise: source coil, be used for receiving the electric power from power supply, produce uniform plasma; Plasma cavity is used for the uniform plasma that the reception sources coil produces, and will pass into the first reaction chamber and/or the second reaction chamber after gaseous plasma.
Alternatively, when the number of described the first reaction chamber and described the second reaction chamber is at least two, the arrangement that described the first reaction chamber and the second reaction chamber replace, the number of described turning arm equals the number sum of the first reaction chamber, the second reaction chamber and clean unit.
Alternatively, the distance between adjacent two reaction chambers equates.
Alternatively, also comprise: the 3rd reaction chamber, adjacent with described the second reaction chamber, and be positioned at described rotating shaft as central point, on the circumference of turning arm as radius, for adopting atom layer deposition process to form the 3rd film that covers described the second metal material layer.
Alternatively, when the number of described the first reaction chamber, described the second reaction chamber and the 3rd reaction chamber is at least two, the arrangement that described the first reaction chamber, the second reaction chamber and the 3rd reaction chamber replace, the number of described turning arm equal the number sum of the first reaction chamber, the second reaction chamber, the 3rd reaction chamber and clean unit.
Compared with prior art, the embodiment of the present invention has the following advantages:
Adopt the muriatic chemical vapor deposition method in reducing metal, form to cover respectively the first metal material layer and second metal material layer on the bottom electrode layer surface of described substrate, described the first metal material layer that forms and the surface quality of the second metal material layer are good, need not extra chemico-mechanical polishing or etching technics, can be to the magnetic material layer injury of substrate and follow-up formation, saved processing step, the reliability of the magnetic memory of formation is high; And the follow-up magnetic material layer that is used to form of the first metal material layer and the second metal material layer, in described magnetic material layer, the first metal and bimetallic ratio can be regulated according to actual needs, and flexibility is high.
Further, adopt the muriatic chemical vapor deposition method in reducing metal, the thickness of each the first metal material layer that forms and the second metal material layer is less, the first metal material layer and the second metal material layer are good in conjunction with quality and the magnetic of the magnetic material film that forms, the quality of the final magnetic material layer that forms is good, has further improved the performance of magnetic memory.
Further, respectively the first metal material layer, the second metal material layer are carried out purified treatment.The step of described purified treatment has been removed the impurity that is attached to each layer on surface of metal, makes the magnetic material layer of formation comparatively pure, and quality is good, has further ensured the quality of magnetic material layer, has improved the performance of magnetic memory.
The formation device of magnetic material layer comprises the whirligig with rotating shaft and at least one turning arm that is connected with described rotating shaft, the first reaction chamber, the second reaction chamber, clean unit are positioned at described rotating shaft as central point, on the circumference of rotating shaft as radius; By the rotation of rotating shaft in described whirligig, the rotation of driven rotary arm makes it that wafer is transported in the first reaction chamber, the second reaction chamber or clean unit, principle and simple in structure, and automaticity is high.
Further, comprise a plurality of the first reaction chambers that are arranged alternately and the second reaction chamber, and described a plurality of the first reaction chamber that is arranged alternately and the second reaction chamber surround into circle, the rotating shaft of whirligig is positioned at the center of circle of described circle, compact conformation not only, can also the while form metal level in the bottom of the opening of a plurality of wafers high-K gate dielectric layer to be formed, be beneficial to and realize the production line manufacturing, improve production efficiency.
Further, also comprise: the 3rd reaction chamber, described the 3rd reaction chamber also are positioned at described rotating shaft as central point, on the circumference of turning arm as radius, be used to form as the 3rd film that forms magnetic material layer, can satisfy the demand of the magnetic material layer that forms different materials.
Description of drawings
Fig. 1 is the cross-sectional view of the magnetic tunnel-junction of prior art;
Fig. 2 is that the present invention is the cross-sectional view of magnetic tunnel-junction of the formation of embodiment;
Fig. 3 is the schematic flow sheet of formation method of the magnetic material layer of the embodiment of the present invention;
Fig. 4-Fig. 9 is the cross-sectional view of forming process of the magnetic material layer of the embodiment of the present invention;
Figure 10 is the plan structure schematic diagram of the formation device of magnetic material layer in embodiments of the invention;
Figure 11 is that Figure 10 is along the cross-sectional view of A-A1 direction.
Embodiment
Just as stated in the Background Art, along with further reducing of process node, the reliability of the memory that prior art forms is low, can't further satisfy industrial requirement.Through research, inventor's discovery, the reliability of magnetic memory is relevant with the structure of magnetic tunnel-junction, and the reliability of the magnetic tunnel-junction of planar structure is lower than the reliability of the magnetic tunnel-junction of stereochemical structure.
Yet, be subjected to the restriction of material and process conditions in prior art, can only be under ultra high vacuum (UHV) condition, adopt physical gas-phase deposition (PVD) to form magnetic tunnel-junction, yet, because physical gas-phase deposition (PVD) surface quality when forming the magnetic tunnel-junction of stereochemical structure is relatively poor, the magnetic tunnel-junction that prior art forms mostly is planar structure, please refer to Fig. 1, magnetic tunnel-junction comprises: the tunnel insulation material layer 107 of magnetic material layer (fixed magnetic material layer 105 and free magnetism material layer 109) and magnetic tunnel-junction.
After further research, the inventor finds, adopts the muriatic chemical vapor deposition method in reducing metal (Metal Chloride Reduction Chemical Vapor Deposition, MCR-CVD), can form the magnetic tunnel-junction of stereochemical structure.The present inventor finds, the technique when adopting the muriatic chemical vapor deposition method in reducing metal to form the magnetic tunnel-junction of stereochemical structure is simple, and the surface quality of the magnetic tunnel-junction of formation is good, and the reliability of magnetic memory is high.
Accordingly, the inventor of the embodiment of the present invention provides a kind of formation method and formation device of magnetic material layer of stereochemical structure.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Please refer to Fig. 2, Fig. 2 shows the structure of magnetic tunnel-junction of the stereochemical structure of the embodiment of the present invention, comprises at least: Semiconductor substrate 200, have opening (indicating) in described Semiconductor substrate 200, and be used to form magnetic tunnel-junction; Be positioned at the bottom electrode layer 201 of described open bottom and partial sidewall; Cover the fixed magnetic material layer 203 of described bottom electrode layer 201; Cover the tunnel insulation material layer 205 on described fixed magnetic material layer 203 surfaces; Cover the free magnetism material layer 207 on insulation material layer 205 surfaces, described tunnel; Cover the top electrode layer 209 of described free magnetism material layer 207.
The inventor finds, when forming the magnetic tunnel-junction of stereochemical structure shown in Figure 2, if adopt the method for common physical vapour deposition (PVD) to form magnetic material layer (fixed magnetic material layer 203 and free magnetism material layer 207), it forms step and comprises: at first form the magnetic material film (not shown) that covers described bottom electrode layer 201 or tunnel insulation material layer 205; Then adopt the described magnetic material film of method planarization of chemico-mechanical polishing (CMP), finally form magnetic material layer.The surface quality of the magnetic material layer that the method for employing physical vapour deposition (PVD) not only forms is poor, and processing step is many, easily damages magnetic tunnel-junction, and the reliability of the magnetic memory of formation is low.
Please refer to Fig. 3, the formation method of the magnetic material layer of the embodiment of the present invention comprises:
Step S31 provides substrate, and described substrate comprises the opening that is used to form magnetic material layer;
Step S32, adopt the muriatic chemical vapor deposition method in reducing metal, form to cover the open bottom of described substrate and the metal level of partial sidewall, described metal level comprises the first metal material layer and is positioned at second metal material layer on described the first metal material layer surface;
Step S33 adopts atom layer deposition process to form the 3rd film that covers described the second metal material layer;
Step S34 carries out annealing treating process to described the first metal material layer, the second metal material layer and the 3rd film, forms magnetic material layer.
Specifically please refer to Fig. 4-Fig. 9, Fig. 4-Fig. 9 shows the cross-sectional view of forming process of the magnetic material layer of the embodiment of the present invention.
Please refer to Fig. 4, substrate 300 is provided, described substrate 300 comprises the opening 304 that is used to form magnetic material layer, covers the bottom electrode layer 301 of described opening 304 bottoms and partial sidewall.
Described substrate 300 is used to subsequent technique that technique platform is provided.Wherein, described opening 304 defines size and the position of magnetic material layer, and the formation technique of described opening 304 is etching technics; Described bottom electrode layer 301 is used for transmission of signal, and the material of described bottom electrode layer 301 is the material that conducts electricity very well, for example tantalum (Ta).
Please refer to Fig. 5, adopt the muriatic chemical vapor deposition method in reducing metal, form first metal material layer 303 on bottom electrode layer 301 surfaces that cover described substrate.
Described the first metal material layer 303 is used for follow-up and the second metal material layer, the 3rd film form the fixed magnetic material layer jointly.The material of described the first metal material layer 303 is certain metal in the fixed magnetic material layer of follow-up formation, usually adopts CoFe or CoFeB as the material of fixed magnetic material layer.In an embodiment of the present invention, the material of described fixed magnetic material layer is CoFeB, and the material of described the first metal material layer 303 is cobalt (Co).
The inventor finds, when adopting the physical gas-phase deposition (PVD) of prior art to form the first metal material layer 303 of stereochemical structure, surface quality is relatively poor, and need to increase chemico-mechanical polishing or etching technics, easily to being used for the first metal material layer 303 and substrate 300 injuries of follow-up formation magnetic material layer.After further research, the inventor finds, adopts the muriatic chemical vapor deposition method in reducing metal (MCR-CVD), can form the magnetic tunnel-junction of stereochemical structure, and it is simple to form technique, and the surface quality of the magnetic tunnel-junction of formation is good, and the reliability of magnetic memory is high.Therefore, in an embodiment of the present invention, the formation technique of described the first metal material layer 303 is the muriatic chemical vapor deposition method in reducing metal.
The step that the muriatic chemical vapor deposition method in described reducing metal forms the first metal material layer 303 comprises: the first metallic plate (not shown) is provided, places described the first metallic plate in opening 304 tops; The chlorine of plasma state and described the first metallic plate react, and form the metal chloride of gaseous state; Metal in the metal chloride of described gaseous state combines with the material on intrabasement bottom electrode layer 301 surfaces, forms intermediate layer (not shown); The metal chloride of described gaseous state and the reaction of described intermediate layer, the first metal material layer 303 on described bottom electrode layer 301 surfaces.
Please refer to Figure 11, the muriatic chemical vapor deposition method in described reducing metal is carried out in muriatic the first reaction chamber 410 in reducing metal, muriatic the first reaction chamber 410 in described reducing metal comprises: the first base station 401, for the wafer 403 of placing tunnel to be formed insulation material layer; Be positioned at the clamping device (not shown) of described the first base station 401 tops, be used for clamping the first metallic plate 405.
Due to the muriatic chemical vapor deposition method in described reducing metal, actual is that metal transfer in described the first metallic plate 405 has been arrived bottom electrode layer 301 surfaces in opening 304, has formed the first metal material layer 303.Therefore, the material of described the first metallic plate 405 selects follow the selection of material in the first metal material layer 303, is certain metal in the fixed magnetic material layer of follow-up formation.In an embodiment of the present invention, the material of described the first metallic plate 405 is Co.
For the ease of bottom electrode layer 301 surface formation the first metal material layers 303 in described opening 304, described the first metallic plate 405 is placed on the top of described opening 304, directly over being preferably.And the size of described the first metallic plate 405 is greater than the size of described opening 304.
Need to prove, usually wafer (substrate 300) surface has a plurality of openings 304, in order to form several magnetic tunnel-junctions, the area of the described opening that the size of described the first metallic plate 405 can have according to crystal column surface is decided, and perhaps selects the first metallic plate 405 of suitable dimension according to the size of wafer.
Please continue with reference to Figure 11, the chlorine of described plasma state is in the interior formation of plasma cavity 407, described plasma cavity 407 is connected with source coil 408, the electric power that described source coil 408 receives from power supply, produce uniform plasma, the uniform plasma that described plasma cavity 407 reception sources coils 408 produce, oxidation chlorine makes it become plasma state.For making the structure that forms device compacter, in embodiments of the invention, described source coil 408 is arranged on the surface of the first reaction chamber 510 roofs.The technological parameter that forms the chlorine of described plasma state comprises: frequency is 2-4MHz, and power is 200-500W, and pressure is 0.01-0.1Torr, Cl
2Flow be 500-2000sccm.
In an embodiment of the present invention, the technological parameter of the chlorine of formation plasma state is: frequency is 2.7MHz, and power is 300W, and pressure is 0.05Torr, Cl
2Flow be 500sccm.
For the quality of the first metal material layer 303 of making formation is good, the technological parameter that the chlorine of plasma state and described the first metallic plate 405 react comprises: temperature is 250-350 ℃, and pressure is 0.01-0.1Torr.In an embodiment of the present invention, the technological parameter that reacts of the chlorine of plasma state and described the first metallic plate 405 is: temperature is 300 ℃, and pressure is 0.05Torr.
The inventor finds, it is slower that the chlorine of described plasma state enters the speed of the first reaction chamber 510, the speed that enters the first reaction chamber 510 in order to accelerate it, when passing into the chlorine of described plasma state to described the first reaction chamber 510, also comprise: pass into inert gas as the carrier of the chlorine of plasma state.Described inert gas is Ar, He or N
2, the range of flow of described inert gas comprises 500-3000sccm.In an embodiment of the present invention, the flow of described inert gas is 1000sccm.
In one embodiment of the invention, the muriatic chemical vapor deposition method in described employing reducing metal, the surperficial step that forms the first metal material layers 303 of bottom electrode layer 301 at described opening 304 comprises: chlorine by plasma, forms the chlorine of plasma state in plasma cavity 407; The chlorine of described plasma state is by Ar, He or N as carrier
2Bring in the first reaction chamber 510; Chlorine at first with the first metallic plate 405 of described plasma state reacts, and forms the cobalt chloride (CoCl) of gaseous state; Cobalt in the cobalt chloride of described gaseous state combines with the material on bottom electrode layer 301 surfaces, in described bottom electrode layer 301 formation intermediate layers, surface; The cobalt chloride of described gaseous state continues and described intermediate layer reacts, at bottom electrode layer 301 surface formation the first metal material layers 303.
Consider if the thickness of described the first metal material layer 303 is too large, follow-up the first metal material layer 303 when the second metal material layer is combined, only two metal levels Metal Phase combination at the interface, quality and the magnetic of the fixed magnetic material layer of formation are relatively poor.Therefore, for quality and the magnetic of the fixed magnetic material layer that makes follow-up formation are good, the thickness of the first metal material layer 303 less than
In an embodiment of the present invention, the thickness of the first metal material layer 303 is
Need to prove, for the better quality of the fixed magnetic material layer that makes follow-up formation, after forming described the first metal material layer 303, before forming the second metal material layer, also comprise: purified treatment is carried out on described the first metal material layer 303 surfaces.Concrete grammar is: pass into the inert gas that flow is 500-3000sccm, for example Ar, He or N
2, remove the impurity on described the first metal material layer 303 surfaces.
Please refer to Fig. 6, adopt the muriatic chemical vapor deposition method in reducing metal, form the second metal material layer 305 that covers described the first metal material layer 303 surfaces.
Described the second metal material layer 305 is used for follow-up and the common fixed magnetic material layer that forms of the first metal material layer 303.The material of described the second metal material layer 305 is certain metal in the fixed magnetic material layer of follow-up formation, and the material of described the second metal material layer 305 is different from the material of the first metal material layer 303.In an embodiment of the present invention, the material of described the second metal material layer 305 is iron (Fe).
Need to prove, in other embodiments of the invention, the material that can be also described the first metal material layer 303 is Fe, and the material of the second metal material layer 305 is Co.
Same, when forming the magnetic material layer of stereochemical structure due to the physical gas-phase deposition (PVD) that adopts prior art, not only need to increase extra technique, and the magnetic tunnel-junction that forms is second-rate, the performance of the final magnetic memory that forms is affected.In embodiments of the invention, the formation technique of the second metal material layer 305 is identical with the formation technique of the first metal material layer 303, is the muriatic chemical vapor deposition method in reducing metal (MCR-CVD).
For the performance of the fixed magnetic material layer of follow-up formation better, the thickness of described the second metal material layer 305 less than
In an embodiment of the present invention, the thickness of the second metal material layer 305 is
Need to prove, specifically method, step and the technological parameter about forming described the second metal material layer 305, please refer to the method, step and the technological parameter that form the first metal material layer 303 in the embodiment of the present invention, do not repeat them here.
Need to prove, after the second metal material layer 305 forms, before forming the 3rd film, also comprise: purified treatment is carried out on the surface to described the second metal material layer 305, specifically please refer in the embodiment of the present invention method to the first metal material layer 303 purified treatment.
Please refer to Fig. 7, adopt atom layer deposition process, form the 3rd film 307 that covers described the second metal material layer 305 surfaces.
When forming the 3rd film 307 of stereochemical structure due to the physical gas-phase deposition (PVD) that adopts prior art, surface quality is relatively poor, also need to increase extra chemico-mechanical polishing or etching technics, and the material of the 3rd film 307 is nonmetal, can't adopt the muriatic chemical vapor deposition method in reducing metal to form.
After further research, the inventor finds, can adopt atom layer deposition process (Atomic Layer Deposition, ALD) to form the 3rd film 307, the quality of the 3rd film 307 that forms is better, can satisfy the requirement of the magnetic tunnel-junction of stereochemical structure.In an embodiment of the present invention, because the material of the fixed magnetic material layer of follow-up formation is CoFeB, the source gas that adopts when forming described the 3rd film 307 is B2H6, and the material of the 3rd film of formation is B.
The process parameters range that described atom layer deposition process forms the 3rd film 307 comprises: temperature is 250-350 ℃; Pressure is 0.01-0.1Torr; The gas flow of source gas is 200-1000sccm.In an embodiment of the present invention, the technological parameter of formation the 3rd film 307 is: temperature is 300 ℃; Pressure is 0.05Torr; The gas flow of source gas is 500sccm.
Same, during for the subsequent anneal treatment process, the first metal material layer 303, the second metal material layer 305, the 3rd film 307 can evenly spread, form the good fixed magnetic material layer of quality and performance, the thickness of described the 3rd film 307 can not be too large, usually less than
In an embodiment of the present invention, the thickness of the 3rd film 307 is
In an embodiment of the present invention, can form satisfactory fixed magnetic material layer after first metal material layer 303 of formation, the second metal material layer 305, the 3rd film 307.
need to prove, in other embodiments of the invention, thickness requirement for the fixed magnetic material layer can be different, therefore can also repeat repeatedly and " adopt the muriatic chemical vapor deposition method in reducing metal to form the first metal material layer, be positioned at second metal material layer on described the first metal material layer surface, adopt atom layer deposition process to form to cover the 3rd film on described the second metal material layer surface ", form a plurality of described the first metal material layers, the second metal material layer, the structure of the 3rd stacks of thin films, be beneficial to the thickness of the fixed magnetic material layer that follow-up formation satisfies the demands.
Need to prove, in order to remove the impurity on each layer surface, after every formation layer of metal layer or film, all described metal level or film surface are carried out purified treatment.
Need to prove, in other embodiments of the invention, also can only form the first metal material layer and the second metal material layer, the material of the magnetic material layer of follow-up formation is the combination of the material of the first metal material layer and the second metal material layer, is CoFe.
Please refer to Fig. 8, described the first metal material layer, the second metal material layer, the 3rd film are carried out annealing in process, form fixed magnetic material layer 308.
Described annealing in process, be used for making the first metal material layer, the second metal material layer, the 3rd film the counterdiffusion of atom phase, mix, form fixed magnetic material layer 308.Described annealing in process is carried out under 1 atmospheric pressure, specifically comprises: pass into inert gas Ar or He, and when temperature is 300 ℃-400 ℃, annealing duration 2-4 minute; Perhaps when temperature was 500 ℃-600 ℃, duration 8-15 second (S) annealed.
In an embodiment of the present invention, the technological parameter of described annealing in process is: 1 atmospheric pressure, 400 ℃ of temperature, annealing duration 3 minutes.
The material of the fixed magnetic material layer 308 that forms after described annealing in process is CoFeB, is used for the magnetic tunnel-junction of follow-up formation stereochemical structure.In the embodiment of the present invention, the thickness of the first metal material layer, the second metal material layer, the 3rd film is all identical, for
In the fixed magnetic material layer 308 that forms, the volume ratio of Co, Fe, B atom is 1: 1: 1, and the Performance and quality of the fixed magnetic material layer 308 of formation is good.
Need to prove, in other embodiments of the invention, can also form according to actual needs the first metal material layer, the second metal material layer, the 3rd film of different-thickness, to regulate the volume ratio of Co, Fe, B atom in fixed magnetic material layer 308, the method for the embodiment of the present invention can form the fixed magnetic material layer 308 of different volumes ratio more flexibly.
Please refer to Fig. 9, form the tunnel insulation material layer 309 that covers described fixed magnetic material layer 308 surfaces.
Described tunnel insulation material layer 309 is for the free magnetism material layer 311 of isolating described fixed magnetic material layer 308 and follow-up formation.The material of described tunnel insulation material layer 309 is magnesium oxide (MgO).The formation technique of described tunnel insulation material layer 309 can for the muriatic chemical vapor deposition method of atom layer deposition process or reducing metal, not repeat them here.
Please continue with reference to figure 9, form the free magnetism material layer 311 that covers described tunnel insulation material layer 309.
Described free magnetism material layer 311 is used for realizing together with fixed magnetic material layer 308 storage of magnetic memory information, and the material of described free magnetism material layer 311 is CoFe or CoFeB.In an embodiment of the present invention, the formation method of described free magnetism material layer 311 is identical with the formation method of described fixed magnetic material layer 308, is specially: adopt the muriatic chemical vapor deposition method in reducing metal to form the first metal material layer (not shown) that is positioned at insulation material layer 309 surfaces, described tunnel; Adopt the muriatic chemical vapor deposition method in reducing metal to form to be positioned at second metal material layer (not shown) on described the first metal material layer surface; Adopt atom layer deposition process to form to be positioned at the 3rd film (not shown) on described the second metal material layer surface; Described the first metal material layer, the second metal material layer and the 3rd film are carried out annealing in process, form free magnetism material layer 311.
Need to prove, when forming free magnetism material layer 311, also can form the structure of a plurality of the first metal material layers, the second metal material layer and the 3rd stacks of thin films, then described stacking structure is carried out annealing in process, the thickness of the free magnetism material layer 311 that formation satisfies the demands, the Method and process parameter of described annealing in process please refer to method for annealing and technological parameter when forming the fixed magnetic material layer in the embodiment of the present invention, does not repeat them here.
Please continue with reference to figure 9, form the top electrode layer 313 that covers described free magnetism material layer 311.
Described top electrode layer 313 is corresponding with bottom electrode layer 301, to realize the transmission of signal.The material of described top electrode layer 313 is the material that conducts electricity very well, for example tantalum (Ta).The formation technique of described top electrode layer 313 is well known to those skilled in the art, does not repeat them here.
After above-mentioned steps is completed, the completing of the magnetic tunnel-junction with stereochemical structure that the embodiment of the present invention forms.
In the formation method of the magnetic tunnel-junction of the embodiment of the present invention, adopt the muriatic chemical vapor deposition method in reducing metal, form to cover respectively the first metal material layer and second metal material layer on the bottom electrode layer surface of described substrate, described the first metal material layer that forms and the surface quality of the second metal material layer are good, need not extra chemico-mechanical polishing or etching technics, can be to the magnetic material layer injury of substrate and follow-up formation, saved processing step, the reliability of the magnetic memory of formation is high; And the follow-up magnetic material layer that is used to form of the first metal material layer and the second metal material layer, in described magnetic material layer, the first metal and bimetallic ratio can be regulated according to actual needs, and flexibility is high.
Further, adopt the muriatic chemical vapor deposition method in reducing metal, the thickness of each the first metal material layer that forms and the second metal material layer is less, the first metal material layer and the second metal material layer are good in conjunction with quality and the magnetic of the magnetic material film that forms, the quality of the final magnetic material layer that forms is good, has further improved the performance of magnetic memory.
Further, also comprise: respectively the first metal material layer, the second metal material layer are carried out purified treatment.The step of described purified treatment has been removed the impurity that is attached to each layer on surface of metal, makes the magnetic material layer of formation comparatively pure, and quality is good, has further ensured the quality of magnetic material layer, has improved the performance of magnetic memory.
Accordingly, please refer to Figure 10, embodiments of the invention also provide a kind of formation device of magnetic material layer, comprising:
The first reaction chamber 510 is used for adopting the muriatic chemical vapor deposition method in reducing metal to form the first metal material layer;
The second reaction chamber 520, adjacent with described the first reaction chamber, be used for adopting the muriatic chemical vapor deposition method in reducing metal to form the second metal material layer that covers described the first metal material layer;
Wherein, described the first reaction chamber 510 comprises the first base station, is used for placing the wafer of magnetic material layer to be formed; Be positioned at the clamping device of described the first base station top, be used for clamping the first metallic plate; Described the second reaction chamber 520 comprises the second base station, is used for placing the wafer that is formed with the first metal material layer; Be positioned at the clamping device of described the second base station top, be used for clamping the second metallic plate.
Described clean unit 550 is used for described the first metal material layer and/or the second metal material layer are carried out purified treatment.Described clean unit 550 carries out purified treatment by passing into the mode of inert gas to the wafer in clean unit 550, removes the impurity of crystal column surface.
In described whirligig 515, turning arm also can have a plurality of, and a plurality of described turning arms all are fixedly connected on rotating shaft, rotate with the rotation of rotating shaft, transports wafer in the first reaction chamber 510, clean unit 550 or the second reaction chamber 520.
In an embodiment of the present invention, the number of described turning arm equals the number sum of the first reaction chamber 510, the second reaction chamber 520 and clean unit 550, and the length of described turning arm and height are as the criterion with the center that the wafer that transports just arrives the base station of each reaction chamber.Therefore, each reaction chamber can be worked simultaneously, and efficient is high, is beneficial to the formation production line.
Need to prove, for the ease of operation, the distance between adjacent two reaction chambers equates.And, in order to realize production line, the number of described the first reaction chamber 510 and the second reaction chamber 520 can be for a plurality of, when the number of described the first reaction chamber 510 and described the second reaction chamber 520 is at least two, the arrangement that described the first reaction chamber 510 and the second reaction chamber 520 replace, the number of described turning arm equals the number sum of the first reaction chamber 510, the second reaction chamber 520 and clean unit 550.
The material of considering the magnetic material layer of formation also comprises boron (B), the formation device of the magnetic material layer of the embodiment of the present invention also comprises: the 3rd reaction chamber 530, adjacent with described the second reaction chamber 520, and be positioned at rotating shaft with described whirligig 515 as central point, on the circumference of turning arm as radius, be used for adopting atom layer deposition process to form the 3rd film that covers described the second metal material layer.
Need to prove, in order to realize production line, the number of described the 3rd reaction chamber 530 also can be for a plurality of, when the number of described the first reaction chamber 510, described the second reaction chamber 520 and the 3rd reaction chamber 530 is at least two, the arrangement that described the first reaction chamber 510, the second reaction chamber 520 and the 3rd reaction chamber 530 replace, the number of described turning arm equal the number sum of the first reaction chamber 510, the second reaction chamber 520, the 3rd reaction chamber 530 and clean unit 550.
In addition, for the first metal material layer, the second metal material layer and the 3rd film surface that can form crystal column surface respectively carries out purified treatment, the formation device of the magnetic material layer of the embodiment of the present invention comprises: a plurality of clean units 550, a plurality of described clean units 550 lay respectively between adjacent two reaction chambers, are used for removing the impurity of crystal column surface.In embodiments of the invention, the first reaction chamber 510, the second reaction chamber 520, the 3rd reaction chamber 530 and the distance between the clean unit 550 between each reaction chamber all equate.
Need to prove, in the formation device of the embodiment of the present invention, also comprise: exhaust outlet 540, be used for waste gas is discharged, described exhaust outlet 540 has a plurality of, between adjacent two reaction chambers, does not repeat them here.
Need to prove, described the first reaction chamber 510 and the second reaction chamber 520 all are used to the muriatic chemical vapor deposition method in reducing metal that condition is provided, described the first reaction chamber 510 is identical with the structure of the second reaction chamber 520, and the below carries out exemplary illustrated as an example of the structure of the first reaction chamber 510 and clean unit 550 example.
Please refer to Figure 11, Figure 11 is that Figure 10 is along the cross-sectional view of A-A1 direction.Figure 11 comprises the first reaction chamber 510 and clean unit 550.
Wherein, described the first reaction chamber 510 comprises: the first base station 401, for the wafer 403 of placing magnetic material layer to be formed (fixed magnetic material layer or free magnetism material layer); Be positioned at the clamping device (not shown) of described the first base station 401 tops, be used for clamping the first metallic plate 405.
For the chlorine with chlorine plasma formation plasma state, the formation device of the embodiment of the present invention also comprises: source coil 408, be used for receiving the electric power from power supply, and produce uniform plasma; Plasma cavity 407 is connected with the first reaction chamber 510, is used for the uniform plasma that reception sources coil 408 produces, with gaseous plasma.In an embodiment of the present invention, described source coil 408 is arranged on the surface of the first reaction chamber 510 roofs, and described plasma cavity 407 is used for plasma chlorine, makes it become plasma state, and the chlorine that transports plasma state arrives the first metallic plate 405 surfaces.
Need to prove, in other embodiments of the invention, described plasma cavity 407 also can be integrated in the inside of the first reaction chamber 510.
Described clean unit 550 is used for removing the impurity of crystal column surface, purifies base station 409, is used for placing the wafer 411 that has been formed with metal level (for example the first metal material layer or the second metal material layer) or film (the 3rd film); Be positioned at the gas tip 413 of described purification base station 409 tops, have some apertures (not shown) in described gas tip 413, the passage when passing into gas for conduct, and can make inert gas Ar, He or the N that passes in the present embodiment
2Stepless action is removed the impurity of crystal column surface in crystal column surface.And for the ease of regulating the flow of inert gas in clean unit, described clean unit also comprises: the flow controller (not shown) of regulating inert gas flow.
To sum up, adopt the muriatic chemical vapor deposition method in reducing metal, form to cover respectively the first metal material layer and second metal material layer on the bottom electrode layer surface of described substrate, described the first metal material layer that forms and the surface quality of the second metal material layer are good, need not extra chemico-mechanical polishing or etching technics, can not save processing step to the magnetic material layer injury of substrate and follow-up formation, the reliability of the magnetic memory of formation is high; And the follow-up magnetic material layer that is used to form of the first metal material layer and the second metal material layer, in described magnetic material layer, the first metal and bimetallic ratio can be regulated according to actual needs, and flexibility is high.
Further, adopt the muriatic chemical vapor deposition method in reducing metal, the thickness of each the first metal material layer that forms and the second metal material layer is less, the first metal material layer and the second metal material layer are good in conjunction with quality and the magnetic of the magnetic material film that forms, the quality of the final magnetic material layer that forms is good, has further improved the performance of magnetic memory.
Further, respectively the first metal material layer, the second metal material layer are carried out purified treatment.The step of described purified treatment has been removed the impurity that is attached to each layer on surface of metal, makes the magnetic material layer of formation comparatively pure, and quality is good, has further ensured the quality of magnetic material layer, has improved the performance of magnetic memory.
The formation device of magnetic material layer comprises the whirligig with rotating shaft and at least one turning arm that is connected with described rotating shaft, the first reaction chamber, the second reaction chamber, clean unit are positioned at described rotating shaft as central point, on the circumference of rotating shaft as radius; By the rotation of rotating shaft in described whirligig, the rotation of driven rotary arm makes it that wafer is transported in the first reaction chamber, the second reaction chamber or clean unit, principle and simple in structure, and automaticity is high.
Further, comprise a plurality of the first reaction chambers that are arranged alternately and the second reaction chamber, and described a plurality of the first reaction chamber that is arranged alternately and the second reaction chamber surround into circle, the rotating shaft of whirligig is positioned at the center of circle of described circle, compact conformation not only, can also the while form metal level in the bottom of the opening of a plurality of wafers high-K gate dielectric layer to be formed, be beneficial to and realize the production line manufacturing, improve production efficiency.
Further, also comprise: the 3rd reaction chamber, described the 3rd reaction chamber also are positioned at described rotating shaft as central point, on the circumference of turning arm as radius, be used to form as the 3rd film that forms magnetic material layer, can satisfy the demand of the magnetic material layer that forms different materials.
Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible change and modification to technical solution of the present invention; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (24)
1. the formation method of a magnetic material layer comprises:
Substrate is provided, and described substrate comprises the opening that is used to form magnetic material layer;
It is characterized in that, also comprise:
Adopt the muriatic chemical vapor deposition method in reducing metal, form the open bottom that covers described substrate and the metal level of partial sidewall, described metal level comprises the first metal material layer and is positioned at second metal material layer on described the first metal material layer surface;
Described the first metal material layer, the second metal material layer are carried out annealing in process, form magnetic material layer.
2. the formation method of magnetic material layer as claimed in claim 1, is characterized in that, the technological parameter of described annealing in process comprises: 1 atmospheric pressure, and inert gas Ar or He, temperature is 300 ℃-400 ℃, annealing duration 2-4 minute; Perhaps 1 atmospheric pressure, inert gas Ar or He, temperature is 500 ℃-600 ℃, annealing duration 8-15 second.
3. the formation method of magnetic material layer as claimed in claim 1, is characterized in that, the material of described the first metal material layer is Co, and the material of described the second metal material layer is Fe; Perhaps the material of described the first metal material layer is Fe, and the material of described the second metal material layer is Co.
4. the formation method of magnetic material layer as claimed in claim 1, is characterized in that, the thickness of described the first metal material layer less than
The thickness of described the second metal material layer less than
5. the formation method of magnetic material layer as claimed in claim 1, it is characterized in that, the muriatic chemical vapor deposition method in described employing reducing metal, the step of the open bottom of the described substrate of formation covering and the metal level of partial sidewall comprises: metallic plate is provided, places described metallic plate in the opening top of wafer; The chlorine of plasma state and described metallic plate react, and form the metal chloride of gaseous state; Metal in the metal chloride of described gaseous state combines with the material of substrate surface, forms the intermediate layer; The metal chloride of described gaseous state and the reaction of described intermediate layer form metal level at described substrate surface.
6. the formation method of magnetic material layer as claimed in claim 5, is characterized in that, the technological parameter that forms the chlorine of described plasma state comprises: frequency is 2-4MHz, and power is 200-500W, and pressure is 0.01-0.1Torr, Cl
2Flow be 200-1000sccm.
7. the formation method of magnetic material layer as claimed in claim 5, is characterized in that, also comprises: pass into inert gas as the carrier of the chlorine of plasma state.
8. the formation method of magnetic material layer as claimed in claim 1, is characterized in that, the technological parameter that forms described metal level comprises: temperature is 250-350 ℃, and pressure is 0.01-0.1Torr.
9. the formation method of magnetic material layer as claimed in claim 1, is characterized in that, also comprises: respectively the first metal material layer, the second metal material layer are carried out purified treatment.
10. the formation method of magnetic material layer as claimed in claim 1, is characterized in that, also comprises: adopt atom layer deposition process, form the 3rd film that covers described the second metal material layer surface.
11. the formation method of magnetic material layer as claimed in claim 10 is characterized in that, the source gas that forms described the 3rd film employing is B
2H
6, the material of the 3rd film of formation is B.
12. the formation method of magnetic material layer as claimed in claim 11 is characterized in that, the process parameters range that forms described the 3rd film is: temperature is 250-350 ℃, and pressure is 0.01-0.1Torr, and the gas flow of source gas is 200-1000sccm.
13. the formation method of magnetic material layer as claimed in claim 11 is characterized in that, also comprises: pass into inert gas when forming described the 3rd film.
14. the formation method as claim 7 or 13 described magnetic material layers is characterized in that, described inert gas is Ar, He or N
2
15. the formation method as claim 7 or 13 described magnetic material layers is characterized in that, the flow of described inert gas is 500-3000sccm.
16. the formation method of magnetic material layer as claimed in claim 1 is characterized in that, when described magnetic material layer was the fixed magnetic material layer, described substrate also comprised: the bottom electrode layer that covers described open bottom and partial sidewall.
17. the formation method of magnetic material layer as claimed in claim 1 is characterized in that, when described magnetic material layer was the free magnetism material layer, described substrate also comprised: the bottom electrode layer that covers described open bottom and partial sidewall; Cover the fixed magnetic material layer on described bottom electrode layer surface, cover the tunnel insulation material layer of described fixed magnetic material surface, described the first metal material layer covers insulation material layer surface, described tunnel.
18. the formation device of a magnetic material layer is characterized in that, comprising:
The first reaction chamber is used for adopting the muriatic chemical vapor deposition method in reducing metal to form the first metal material layer;
The second reaction chamber, adjacent with described the first reaction chamber, be used for adopting the muriatic chemical vapor deposition method in reducing metal, form the second metal material layer that covers described the first metal material layer;
Clean unit between the first reaction chamber and the second reaction chamber, is used for removing the impurity of crystal column surface;
Whirligig, comprise rotating shaft and at least one turning arm that is connected with described rotating shaft, the first reaction chamber, the second reaction chamber, clean unit are positioned at described rotating shaft as central point, on the circumference of turning arm as radius, described turning arm transports wafer in the first reaction chamber, clean unit or the second reaction chamber by the rotation of rotating shaft.
19. the formation device of magnetic material layer as claimed in claim 18 is characterized in that, described the first reaction chamber comprises the first base station, is used for placing the wafer of the first metal material layer to be formed; Be positioned at the clamping device of described the first base station top, be used for clamping the first metallic plate; Described the second reaction chamber comprises the second base station, is used for placing the wafer that is formed with the first metal material layer; Be positioned at the clamping device of described the second base station top, be used for clamping the second metallic plate.
20. the formation device of magnetic material layer as claimed in claim 19 is characterized in that, also comprises: source coil, be used for receiving the electric power from power supply, produce uniform plasma; Plasma cavity is used for the uniform plasma that the reception sources coil produces, and will pass into the first reaction chamber and/or the second reaction chamber after gaseous plasma.
21. the formation device of magnetic material layer as claimed in claim 18, it is characterized in that, when the number of described the first reaction chamber and described the second reaction chamber is at least two, the arrangement that described the first reaction chamber and the second reaction chamber replace, the number of described turning arm equal the number sum of the first reaction chamber, the second reaction chamber and clean unit.
22. the formation device of magnetic material layer as claimed in claim 18 is characterized in that, the distance between adjacent two reaction chambers equates.
23. the formation device of magnetic material layer as claimed in claim 18, it is characterized in that, also comprise: the 3rd reaction chamber, adjacent with described the second reaction chamber, and be positioned at described rotating shaft as central point, on the circumference of turning arm as radius, be used for adopting atom layer deposition process to form the 3rd film that covers described the second metal material layer.
24. the formation device of magnetic material layer as claimed in claim 23, it is characterized in that, when the number of described the first reaction chamber, described the second reaction chamber and the 3rd reaction chamber is at least two, the arrangement that described the first reaction chamber, the second reaction chamber and the 3rd reaction chamber replace, the number of described turning arm equal the number sum of the first reaction chamber, the second reaction chamber, the 3rd reaction chamber and clean unit.
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